Development of Force Monitoring Transducers Using Novel ... · Mechanics, Materials Science &...
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Mechanics, Materials Science & Engineering, September 2016 – ISSN 2412-5954
MMSE Journal. Open Access www.mmse.xyz
Development of Force Monitoring Transducers Using Novel Micro-
Electromechanical Sensor (MEMS)
Dimitar Chakarov1, Vladimir Stavrov2, Detelina Ignatova1, Assen Shulev1, Mihail Tsveov1, Rumen
Krastev1, Ivo Vuchkov1
1 – Institute of Mechanics, BAS, Sofia, Bulgaria
2 – AMG Technology Ltd., Botevgrad, Bulgaria
DOI 10.13140/RG.2.2.20337.48487
Keywords: mechanical, transducer, force, monitoring, MEMS, piezoresistive, sensor, experimental, data.
ABSTRACT. MEMS piezoresistive sensors are a favourable and attractive option for strain detection due to a number
of key advantages such as high sensitivity, low noise, good scaling characteristics, low cost and their ability to have the
detection electronics circuit farther away from the sensor or on the same sensing board. This paper represents the results
obtained at characterization of novel transducers to be employed into force monitoring systems. Each transducer
comprises a coherently designed novel mechanical transducer and a positional MEMS sensor with very high accuracy.
The exploited positional MEMS microsensor and the mechanical transducer are presented in this paper. The particular
MEMS sensor provides a voltage output signal having sensitivity in the range of 240 µV/µm at 1V DC voltage supply.
The range of operation of the mechanical transducer is optimized to fit the 500 µm travel range of the microsensor. A
finite element model is constructed to simulate the system structure using the commercial FE package. Two prototypes
of force transducers are described and manner of used silicon MEMS sensor attachment is demonstrated. An experimental
set-up and experimentally measured load curve are presented in the paper. Diagrams force/voltage for two prototypes at
different supply voltage 1V and 2V are revealed.
Introduction. A load cell is a transducer that converts load acting on it into an analog electrical
signal. Typically, this conversion is achieved by strain gauges which are bonded into the load cell
beam and wired into a Wheatstone bridge configuration. Strain gauge load cells dominate the
weighing industry [1].
High-performance strain sensing systems, consisting of sensors and interface electronics, are highly
desirable for advanced industrial applications, such as point-stress and torque sensing, and strain
mapping. Conventional strain sensors made from metal foils suffer from limited sensitivity, large
temperature dependence and high power consumption. Further, the metal-foil strain gauges offer
flexibility and a potential for use in this format, but they suffer low gauge factor (GF) and limited
scalability to large areas due to lack of strategies for multiplexed addressing [2]. Therefore, they are
inadequate for high performance and low power consumption applications [3] and hence other strain
sensing methods, based on the Micro Electro Mechanical Systems (MEMS) technology, have been
proposed [4, 5].
New advances in the field of Micro Electro Mechanical Systems (MEMS) have broadened
considerably the applications of these devices. MEMS technology has also enabled the
miniaturization of the devices, and a typical MEMS sensor is at least one order of magnitude smaller
compared to a conventional metal-foil strain sensor that is used to measure the same quantity.
Consequently, MEMS devices can be batch-fabricated, which offers a high potential for cost
reduction. Moreover, proper design can solve problems related to power consumption, while
providing improved performance characteristics, such as accuracy, sensitivity and resolution. Finite
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Element Analysis (FEA) provides a reliable tool to carry out the required parametric studies in order
to optimize the sensor performance [6].
Several physical sensing principles have been explored in MEMS strain sensors including the
modulation of optical, capacitive, piezoelectric, and piezoresistive properties or frequency shift [7,
8].
More particularly, MEMS piezoresistive strain sensors are more favourable and attractive due to a
number of key advantages such as high sensitivity [1], low noise, better scaling characteristics, low
cost and their ability to have the detection electronics circuit farther away from the sensor or on the
same sensing board. Moreover, they have high potential for monolithic integration with low-power
CMOS electronics. Furthermore, piezoresistive strain sensors need less complicated conditioning
circuits [9].
MEMS load sensors capable of both steady-state and dynamic measurements are generally designed
as compliant structures. The device geometry and operating voltages can be optimized for maximum
force resolution and range, subject to a number of manufacturing and electromechanical constraints
[10].
In present paper, two force measuring systems including mechanical transducer and a new silicon
MEMS position sensor with sidewall piezoresistors [11] has been studied. Thus, the performance of
the entire force monitoring systems, such as high class electronic scales, can be strongly improved by
replacing the currently employed force transducers.
MEMS position sensor for detection of 500µm range displacement.
This approach is based on elaboration of contact MEMS device for displacement detection in the
range of 500 µm [12]. The envisaged position microsensor comprises of an anchored (1) and a
moveable (2) part. Both parts are connected with a monolithic flexure (3), shown in Fig. 1 (а). The
monolithic flexure (3) comprises two pairs of differential springs and two detecting cantilevers (4),
which are also attached to point C of the springs.
(а)
(b)
Fig. 1. (a): Optical micrograph of a positional microsensor with a single anchored (1) and a single
actuated (2) part and a flexure (3) comprising two cantilevers (4) oriented in X direction; four
sidewall piezoresistors (51–54), sensitive in Y direction are built-in at the fixed ends of cantilevers;
(b): Plot of the sensor signal showing 240µV/µm V sensitivity & 500µm travel range.
The cantilevers are oriented in X direction and the move of part (2) in Y direction is transduced to a
bending of cantilevers’ (4) by differential springs. In the sidewalls of the fixed end of the both
cantilevers (4) four piezoresistors are embedded (51 - 54). In more details, each cantilever possesses
0 50 100 150 200 250 300 350 400 450 500 5500
0.02
0.04
0.06
0.08
0.1
0.12
D [um]
U [V
]
U = 0.00024 D - 0.002
data
linear fit
1 2 3
4
4
51 52
53 54
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a pair of two piezoresistors, 51 -52 and 53 - 54 respectively, which are electrically connected in two
voltage dividers. Both voltage dividers are connected in a full bridge configuration, to amplify each
other, when actuated part (2) moves in Y (horizontal) direction. This particular sensor has
demonstrated a displacement sensitivity of 240 µV/µm at 1V DC voltage supply of the bridge as
plotted in Fig. 1(b), and the travel range is limited to approx. 650 µm.
Since differential springs displayed in Fig. 1(a), are mechanically instable in compression mode, this
particular flexure (3) can be used in tensile mode, only. Additionally, the devices with sidewall
embedded piezoresistors exhibit very low noise and extremely low (i.e., non-detected, at all)
temperature dependence [13]. By means of a modification of the flexure layout the sensitivity and the
travel range can be tuned to meet optimization criteria [14].
As far, the detecting cantilevers (4) with sidewall piezoresistors ensure sensor signal having above
1,000,000 of intervals in the full scale range, there is a room to achieve a ppm (part per million)
resolution of the force transducers, if optimized mechanical transducers are developed.
Since the silicon flexures are extremely fragile, auxiliary mechanical parts having package features
for fixing and protecting the both MEMS parts and providing a relative displacement in the range of
from 50µm to 1.5mm, have been developed. They could be made of different materials and the
mechanical properties could be tuned to measure in desired force range. Based on experimentally
measured results, a method of force monitoring with ppm-accuracy, independently on ambient
conditions, has been proposed [14]. Thus, the performance of the entire force monitoring systems,
such as high class electronic scales, can be strongly improved by replacing the currently employed
force transducers.
Development of a mechanical transducers for force monitoring using MEMS sensor.
The goal of present study is to develop a new high performing mechanical transducers applicable in
force monitoring systems. To monitor the forces within specified limits it is necessary to develop a
flexible transducer mechanism, which transforms the force-load to a displacement of the MEMS
sensor, and the stiffness of the transducer determines the range of the measured forces. In order to
develop the targeted high performing force monitoring systems, the design approach exploiting
flexure mechanisms [15] has been proposed. Respectively, a flexible transducer mechanism, which
transforms the applied load to an elastic strain to be detected by the position microsensor, has been
created. There were developed two types mechanical transducers.
A. Mechanical transducer type "O-ring", as illustrated in Fig.2 (a). Tensile load is applied to one
side of the "O-ring" and a support reaction occurs at the opposite side. The MEMS position sensor is
placed and fixed in the middle of the ring along the axis of the applied force, thus it monitors the
displacement directly. The constructed 3D CAD model of the mechanical transducer is shown in Fig.
2(b). Admissible deformations of MEMS sensor are determined - 0.5 mm, and the upper limit of the
measured force is specified: -1000 N.
To meet the specified range of monitored forces, it is necessary to provide a relevant stiffness of the
mechanical transducer. Commercial CAD system exploiting finite element modelling (FEM) has
been used for caring out a simulation of a static load. Computer simulations were conducted,
assuming that the load has been attached at the upper end of the transmission mechanism and the
lower end is immobilized. Load with a static force of 1000 N was simulated, using a model with
varying thickness of the transducer plate. After a series of experiments, plate with thickness of 11
mm has been selected to achieve a suitable stiffness. Steel alloy with Young’s modulus of E = 210
GPa and Yield strength of σ = 0.620 GPa has been chosen as a raw material. The screen plot with
calculated results for effective displacements is shown in Fig. 3 (a). At so selected stiffness of the
transducer, a load of 1000 N generates a displacement of 0.300 mm, which is to be measured by the
MEMS position sensor. The screen plot with effective stress is shown in Fig. 3 (b).
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F
F
(а) (b)
Fig. 2. Mechanical transducer as an "O-ring" type: (a) kinematic scheme; (b) CAD model.
(а) (b)
Fig. 3. Simulations of mechanical transducer mechanism: (a) screen plot with effective
displacements, (a) screen plot with effective stress.
A prototype of the mechanical transducer has been manufactured with the help of wire electro-
discharge machining. Photos of both sides of the force transducer prototype are shown in Fig 4. Both
parts of the piezoresistive MEMS positional sensor are firmly bonded to chip-carriers which are
further fixed by screws to both loaded sides of the "O-ring", as shown in Fig.4. (a). The maximum
travel range of the transducer is constrained to 0.300 mm, by cutting into the housing a gap with same
clearance - the gap G in Fig. 4 (b), thus, limiting the monitored force-load to 1000N. This constrain
prevents mechanical overload and damage to the MEMS position sensor, as well as keeps the tensile
and bending stresses in the transducer bellow yielding stress with a safety factor of 1.2.
B. Mechanical transducer type double symmetric parallelogram mechanism has been created.
To meet the specified range of monitored forces, it is necessary to achieve the relevant stiffness of
mechanical transducer. Since, the admissible displacement of the position microsensor is 0.5 mm and
the upper limit of the measured force has been specified to 100 N, the low-stiffness mechanical
transducer mechanism, as illustrated by structure scheme in Fig. 5 (a) and by 3D CAD model shown
in Fig. 5 (b), has been designed.
The transducer mechanism is made of a solid plate titanium alloy and it was processed to obtain the
elastic joints of the mechanism. The elastic joints are double-notched elastic beam type and they
possess a number of advantages compared to contact ones, as they are free from backlash, friction,
and hysteresis. This geometry allows the desired low stiffness in one directions of joint bending and
high stiffness in the remaining non-motional direction to be simultaneously achieved. The position
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Mechanics, Materials Science & Engineering, September 2016 – ISSN 2412-5954
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microsensor is attached at the middle of the mechanism. In this way there is transmission ratio
between the displacements along the two axes of the mechanical transducer.
(а) (b)
Fig. 4. Photo of a prototype of the mechanical transducer– (a) front side with mounted MEMS
position sensor, (b) rear side.
α
h
n
l
H
N
(а) (b)
Fig. 5. Mechanical transducer mechanism: (a) kinematic scheme; (b) CAD model.
The height of the device is denoted by H, and the width of the device in the sensor area is denoted by
N (Fig. 5a). Each symmetric branch of the transmission is considered as a rectangle with two sides n
and h. According to this geometry transmission ratio k of symmetric parallelogram mechanism is
determined as:
n
h
H
N
h
nk
(1)
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Commercial CAD system exploiting finite element modeling (FEM) has been used for caring out an
experiment of a static load. The constructed 3D CAD model of the mechanical transducer shown in
Fig. 5(b) has been involved for computer simulations. The titanium alloy (Ti-8Al-1Mo-1V) with
Young’s modulus of E = 120 GPa and Yield strength of σ = 0.910 GPa has been chosen as a raw
material.
The screen with calculated results for effective displacements is shown in Fig. 6. The screen with
effective stress is not shown here, but normal stress in the mostly-loaded areas did not exceed the
allowable stress.. Computer simulations were conducted, when the load has been attached at the upper
end of the transmission mechanism and the lower end has been rigidly immobilized. Load with a
static force of 100 N was simulated, using a model with varying thickness of the titanium alloy plate.
The displacements H of the force application point, the deflection N between the attachment
points of the position microsensor, and calculated transmission ratio k are reported in Table 1.
Table 1. Calculated displacements and transmission ratio for mechanical transducer at load of
100N.
Plate
thickness 9 [mm] 10 [mm] 11 [mm] 12 [mm] 13 [mm]
N [mm] 1.138 0.879 0.707 0.598 0.498
H [mm] 0.695 0.537 0.432 0.365 0.304
k 1.637 1.637 1.6365 1.638 1.638
The plate thickness of t = 11 mm has been selected for prototyping of the force transducer, for
which additional simulations during load changes were carried out. A load respectively of 90N,
70N, 50N and 30N is applied. The calculated displacements H , N and transmission ratio k are
shown in Table 2.
Table 2. Calculated displacements and transmission ratio for different loads.
Load 90 [N] 70[N] 50[N] 30[N]
N [mm] 0.636 0.494 0.353 0.212
H [mm] 0.389 0.302 0.216 0.130
k 1.635 1.636 1.634 1.631
As a result of the experiment it has been concluded that the transmission ratio is maintained constant.
The range of operation of the force transducer depends on the width of the gap that limits the
transducer displacement noted by “G” in Fig.4(b). A gap of 0.500mm has been selected for which the
displayed force transducer will work in the range of 70N. The upper limit of the measured force
specified as 70 N provides load margin which avoid position microsensor damaging.
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Fig. 6. Screens with effective displacements.
A prototype of the mechanical transducer has been manufactured with the help of wire electro-
discharge machining. A photo of the force transducer prototype is shown on Fig 7. It is enabled with
piezoresistive position microsensor, shown in the zoomed image, having a travel range of 650µm
limited by the width of the gap G of 500µm, also shown in additional zoomed image.
Fig. 7. Photo of the force transducer prototype having travel range of 500µm limited by the width of
the gap G.
Experimental set-up and experimental data.
The mechanical transducer prototypes are tested for load measurements by a precise loading test
machine TIRAtest 2300. The system exploits a load cell with a measuring range of 10kN, a digital
multi-meter PeakTech 3415 connected to a computer and the prototype of force transducer, connected
on both sides with loading machine traverses.
A. Mechanical transducer "O-ring" type.
The MEMS sensor is supplied with a stabilized DC voltage supply – one test has been carried out at
1V and other test - at 2V. The output voltage of the sensor is recorded using a digital multi-meter
G
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Protek D470 connected to the computer. Fig. 8 shows the experimental set-up used for load
monitoring.
Fig. 8. Photo of the experimental set-up for mechanical transducer "O-ring" type.
The testing machine loads the prototype at a constant speed by measuring both: the loading force and
the output voltage of the position sensor. To obtain the force/voltage ratio, both registered signals are
time synchronized.
Measurements are made of two identical prototypes marked as P1 and P2, at power supply of 1V and
2V and loading/unloading from 0 to 1000 N and vice versa. There are three trials made to each
prototype under loading and unloading at a speed of mobile traverse of 0.48 mm/min. The obtained
force/voltage diagrams of these experiment are shown in Fig. 9. The resulting diagrams are linear,
which can be expressed by F = aU + b, where F is loading force and U is output voltage.
Fig. 9: Diagrams force/voltage for two prototypes P1 and P2 at supply voltage of 1V and 2V.
The slope a of each diagram depends on the supply voltage. Both transducers have similar slopes at
the same supply voltage, but each transducer has a different offset b. This offset depends on the sensor
preload. The average values of coefficients a and offset voltage Uo=-b/a, at a given supply for each
prototype are as follows U=1V: a1= 21767 N/V, U01=0,0660 V, a2=22047N/V, U02=0,0315 V; U=2V:
a1=11027N/V, U01= 0,1318 V, a2=11226N/V, U02=0,0624 V. The charts show that the unloading
curve does not tally with loading chart but the hysteresis loop is fairly small. Hysteresis observed can
0
100
200
300
400
500
600
700
800
900
1000
0.000 0.050 0.100 0.150 0.200 0.250
F, N
U, V
1V, P1
2V, P1
2V, P2
1V, P2
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be due to imperfections of the measuring system, i.e. miss-synchronization between the two
measurements channels when switching load/unload measurements, etc.
B. Mechanical transducer type double symmetric parallelogram mechanism.
In this experiment the MEMS sensor is supplied with a stabilized DC voltage supply of 1V and in a
similar manner the output voltage of the sensor is recorded using a digital multi-metre Protek D470
connected to the computer. Fig. 10 a) shows the experimental set-up used. There are four trials made
under loading from 0 till 70 N and unloading at a speed of mobile traverse of 0.48 mm/min. The
obtained force/voltage diagram of one trial is shown in Fig.10 b).
(a) ( b)
Fig. 10. (a) Experimental set-up and (b) Diagrams force/voltage for mechanical transducer type B
at supply voltage of 1V.
The resulting diagram is linear and the hysteresis get is fairly small. The average values of slope a
and offset voltage Uo=-b/a, at a given supply voltage of 1V have the values: a= 1119 N/V and U0=
0,0271V.
Development of a control unit for prototypes of mechanical transducers with original MEMS
sensor.
This control unit is computerized system, designed so that it is compatible with the original MEMS
sensors. It includes high-precision amplifier, that cover the functional characteristics of all
transducers. It includes also user display, setup keyboard, a channel for communication with host
computer for real time data transfer. Control unit can be used like smart transmitter. The overall look
of control unit for transducer prototypes is shown in Fig.11 (a). Presented experimental setup has
been used for calibration of the control system. The prototypes were loaded with constant speed and
both: loading force and measured force were recorded using “smart transmitter” mode. The resulting
diagrams after calibration are strictly linear. The relationship - loading force / measured force for
transducer "O-ring" type is shown on Fig. 11 (b). It can be expressed by equality: Fm = 1,0012F +
0,0085.
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
0.0200 0.0400 0.0600 0.0800 0.1000
F, N
U, V
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(a) (b)
Fig. 11. (a) Photo of the control unit;(b) Relationship- loading force / measured force for
transducer "O-ring" type.
Summary. This paper represents the results obtained at characterization of novel transducers to be
employed into force monitoring systems. Each transducer comprises a coherently designed
mechanical transducer and a MEMS positional sensor with very high accuracy.
The MEMS positional micro sensor and the design of two type mechanical transducers are presented
in the paper. The range of operation of the mechanical transducer is optimized to fit the 500µm travel
range of the positional micro sensor. Respectively, the flexures’ stiffness corresponds to achieve the
maximum displacement at the upper limit of the measured load. A finite element model is constructed
to simulate the system structure using a commercial FE package. The force transducers range of
operation is limited by the width G of a gap, which also, avoids damages of the mechanical transducer
and MEMS positional sensor. Prototypes of two transducers are described and manner of usage of
the silicon MEMS position sensor attachment is demonstrated. An experimental set-up for measuring
the load curves are reported in the paper. Diagrams of force vs. sensor output voltage of the prototypes
at different supply voltage 1V and 2V are demonstrated and discussed.
As a result of the experiment it has been concluded that the force/voltage ratio is constant.
Piezoresistive MEMS position sensors can be successfully used for strain detection at force loading
of the mechanical transducer. Respectively, other than force values like: 3D strain, acceleration,
torque, temperature and other environmental parameters, as well as their combinations can be
accurately monitored, when suitable transducers are designed.
Acknowledgments. Authors gratefully acknowledge the financial supports of this work by grant 6IF-
02-13/15.12.2012 of the Bulgarian National Innovation Fund.
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Fm = 1,0012F + 0,0085
0
20
40
60
80
100
0.0 50.0 100.0
F x1
0[N
]
Fmx10[N]
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