Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose...

27
Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010

Transcript of Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose...

Page 1: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Design and Assessment of a Robust Voltage Amplifier with 2.5

GHz GBW and >100 kGy Total Dose Tolerance

Jens Verbeeck

TWEPP 2010

Page 2: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 2

Outline

Introduction

Radiation and temperature effects

Constant gm amplifier

Matching structure

Conclusions

Page 3: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

3

Outline

Introduction

Radiation and temperature effects

Constant gm amplifier

Matching structure

Conclusions

Presentation: Jens Verbeeck

Page 4: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 4

Introduction Development of optical instrumentation and

communication for nuclear and high temperature environments

Applicable for MYRRHA ITER LHC Space

Page 5: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 5

Optical instrumentation

TDC

TIALA

AGC

distance TIALA

AGC

Receiver channel

Start fiber

Stop fiber

Laser pulser Transmitter fiber

TargetPD

PD

PD: Photo diode

TIA: Transimpedance amplifier

LA: Limiting amplifier

AGC: Automatic gain controller

TDC: Time to digital converter

tcD 2

resres tc

D 2

Page 6: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 6

Optical instrumentation

TDC

TIALA

AGC

distance TIALA

AGC

Receiver channel

Start fiber

Stop fiber

Laser pulser Transmitter fiber

TargetPD

PD

Goal LIDAR with ps accuracy, distance =10m

Current status TDC with ps resolution developed and

irradiated up to 5MGy (Ying Cao) November tape-out receiver channel

Page 7: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 7

Outline

Introduction

Radiation and temperature effects

Constant gm amplifier

Matching as a function of radiation dose

Conclusions

Page 8: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 8

Radiation : Introduction TID

Oxide: Net positive charge trapped at the oxide

Si-SiO2 interface: vg > 0 => +∆vth (NMOS) vg < 0 => -∆vth (PMOS)

[Hugh J. Barnaby] [Hugh J. Barnaby]

Page 9: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 9

Temperature: effectsDecrease of mobility Increase of leakage current

Decrease of VTH

TDecrease of gm

[P. C. de Jong et. al.][M. Willander]

Page 10: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 10

Outline

Introduction

Radiation and temperature effects

Constant gm amplifier

Matching as structure

Conclusions

Page 11: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 11

Optical receiver Classical building blocks

Transimpedance amplifier (TIA) Post amplifier (PA) Time to digital convertor (TDC)

Page 12: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 12

Constant gm amplifier: Why?

Radiation/temperature causes variation in TIA parameters

gm and rout variable in formula A0

Make gain independent of gm and rout

10

0

A

ARfZTIA

inf CR

ABW

20

outfnd CRf

21

22110 outmoutm rgrgA

inC

AGBW

20

Page 13: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 13

Constant gm amplifier: Why?Radiation

up to 300 kGy (M. Manghisoni et al.)

Temperature (-40 up to 130°C)

 0.18µm CMOS

100kGy 300kGy

NMOS +7mV +20mVPMOS -12mV -60mV

Page 14: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 14

Constant gm amplifier: Operation

bOUTGSGS RIVV *12 REFOUT II

2)1

1(²

1

)(

2

BRbLW

CµI

oxn

OUT

55)/(2 Doxnm ILWCµg

)1

1(2BR

RA

B

L n

x

Bmx µ

µ

LW

LW

BRg

1

5

)/(

)/()

11(

2

RDSTOT >> RL Transistor length ↑ Trade-off: BB <=> temp/RAD tolerance

[B.Razavi]

[Sean Nicalson et al.]

Page 15: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 15

Temperature simulations

Degradation with bias : 2.5 %

Temperature sweep from 0°C to 100°C

Gain =14dBGBW = 2.5GhzBB = 500MHz

Page 16: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 16

Radiation simulations

Degradation with bias : 0.85 %

Amplifier irradiated up to 300kGy

Page 17: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 17

Results

Temperature drift 5.6 % or 343 ppm/°C

Radiation up to 100 kGyGain degradation 4.5%

Page 18: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 18

Results: RadiationCause degradation?

THsens

GSTH

THsensGSTH

V

V

V

BVgm

gm

)1

1(

1

VTHsens = Standard deviation

before radiation of M1 and M2 ∆ VTHsens = Variation of VTHsens

Impact of a ∆VTHsens of 10% on the gain of the amplifier.

Large VGS –VTH for high radiation tolerance

gm = 2*IDS/(VGS-VTH) => IDS↑↑ & VDSsat ↑↑

Page 19: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 19

Layout

Page 20: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 20

Outline

Introduction

Radiation and temperature effects

Constant gm amplifier

Matching structure

Conclusions

Page 21: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 21

Matching

Standard deviation between identical components fabricated on the same chip=>small statistic variations = MISMATCH

Good matching good PSRR, CMRR Important for replica biasing Reduces offset

Matching of Vth depends strongly on area transistor

LW

Avthvth

*

Page 22: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 22

Matching Layout transistors on chip

Drains connected in each column Gates connected in each row Shared source and bulk 6 regular transistors, 6 Enclosed layout transistors [G. Annelie et al.]

Page 23: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 23

Radiation effects up to RD of 100kGy

Decrease of VTH Rebound effect

RINCE effect [F. Faccio] Different effect for large gates Radiation Induced Narrow Channel Effect

Standard deviation VTH –shift! =>

No significant effects

Regular NMOS transistors

ELT transistors

THsens

GSTH

THsensGSTH

V

V

V

BVgm

gm

)1

1(

1

Page 24: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 24

Outline

Introduction

Radiation and temperature effects

Constant gm amplifier

Transistor measurements

Conclusions

Page 25: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 25

Conclusions Effects of radiation and temperature

Change of transistor parameters Varying gain

Gain can be held stable with constant gm amplifier BW and GBW of optical receiver guaranteed Open loop control Generate bias voltages for whole chip with gm biasing Trade off: bandwidth temperature tolerance Trade off: current consumption & voltage headroom rad. Tolerance

Larger VGS-VTH => VDSsat ↑↑ difficult to keep transistors in saturation at high temperatures.

Matching results Decrease of VTH

VTH-shift depending on transistor width Standard deviation VTH –shift

Page 26: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 26

Questions

?Acknowledgments to:

Page 27: Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010.

Presentation: Jens Verbeeck 27

References1. M. Manghisoni, L. Ratti, V. Re and V. Speziali, “Radiation

hardness perspectives for the design of analog detector readout circuits in the 0.18-µm CMOS Generation”, Transactions on nuclear science, VOL. 49 NO. 6, December 2002

2. Hugh J. Barnaby, “Total-Dose Effects in Modern Integrated Circuit Technologies” IEEE NSREC, 2005

3. F. Faccio, G. Cervelli, “Radiation-Induced Edge effects in Deep Submicron CMOS transistors”, Transactions on nuclear science, VOL. 52 NO. 6, December 2005

4. M. Willander and H. L. Hartnagel (eds.), High Temperature Electronics, Chapman & Hall, London, 1997.

5. P. C. de Jong, G. C. M. Meijer, and A. H. M. van Roermund, “A 300 °C dynamic feedback instrumentation amplifier,” IEEE J. Solid-State Circuits, vol. 33, no.12, pp. 1999-2009, Dec. 1998.

6. Sean Nicalson and Khoman Phang, “Improvements in biasing and compensation of cmos opamps”, ISCAS 2004

7. B. Razavi, “Design of analog integrated circuits” 8. G. Anelli et al.,“ Radiation tolerant VLSI circuits in standard deep

submicron CMOS technologies for the LHC experiments: Practical design aspects,” IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1690–1696, Dec.1999.