TWEPP 2012 17-21 SEPTEMBER LOCAL ORGANIZING COMMITTEE PROGRESS AND PROPOSALS.
Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose...
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Transcript of Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose...
Design and Assessment of a Robust Voltage Amplifier with 2.5
GHz GBW and >100 kGy Total Dose Tolerance
Jens Verbeeck
TWEPP 2010
Presentation: Jens Verbeeck 2
Outline
Introduction
Radiation and temperature effects
Constant gm amplifier
Matching structure
Conclusions
3
Outline
Introduction
Radiation and temperature effects
Constant gm amplifier
Matching structure
Conclusions
Presentation: Jens Verbeeck
Presentation: Jens Verbeeck 4
Introduction Development of optical instrumentation and
communication for nuclear and high temperature environments
Applicable for MYRRHA ITER LHC Space
Presentation: Jens Verbeeck 5
Optical instrumentation
TDC
TIALA
AGC
distance TIALA
AGC
Receiver channel
Start fiber
Stop fiber
Laser pulser Transmitter fiber
TargetPD
PD
PD: Photo diode
TIA: Transimpedance amplifier
LA: Limiting amplifier
AGC: Automatic gain controller
TDC: Time to digital converter
tcD 2
resres tc
D 2
Presentation: Jens Verbeeck 6
Optical instrumentation
TDC
TIALA
AGC
distance TIALA
AGC
Receiver channel
Start fiber
Stop fiber
Laser pulser Transmitter fiber
TargetPD
PD
Goal LIDAR with ps accuracy, distance =10m
Current status TDC with ps resolution developed and
irradiated up to 5MGy (Ying Cao) November tape-out receiver channel
Presentation: Jens Verbeeck 7
Outline
Introduction
Radiation and temperature effects
Constant gm amplifier
Matching as a function of radiation dose
Conclusions
Presentation: Jens Verbeeck 8
Radiation : Introduction TID
Oxide: Net positive charge trapped at the oxide
Si-SiO2 interface: vg > 0 => +∆vth (NMOS) vg < 0 => -∆vth (PMOS)
[Hugh J. Barnaby] [Hugh J. Barnaby]
Presentation: Jens Verbeeck 9
Temperature: effectsDecrease of mobility Increase of leakage current
Decrease of VTH
TDecrease of gm
[P. C. de Jong et. al.][M. Willander]
Presentation: Jens Verbeeck 10
Outline
Introduction
Radiation and temperature effects
Constant gm amplifier
Matching as structure
Conclusions
Presentation: Jens Verbeeck 11
Optical receiver Classical building blocks
Transimpedance amplifier (TIA) Post amplifier (PA) Time to digital convertor (TDC)
Presentation: Jens Verbeeck 12
Constant gm amplifier: Why?
Radiation/temperature causes variation in TIA parameters
gm and rout variable in formula A0
Make gain independent of gm and rout
10
0
A
ARfZTIA
inf CR
ABW
20
outfnd CRf
21
22110 outmoutm rgrgA
inC
AGBW
20
Presentation: Jens Verbeeck 13
Constant gm amplifier: Why?Radiation
up to 300 kGy (M. Manghisoni et al.)
Temperature (-40 up to 130°C)
0.18µm CMOS
100kGy 300kGy
NMOS +7mV +20mVPMOS -12mV -60mV
Presentation: Jens Verbeeck 14
Constant gm amplifier: Operation
bOUTGSGS RIVV *12 REFOUT II
2)1
1(²
1
)(
2
BRbLW
CµI
oxn
OUT
55)/(2 Doxnm ILWCµg
)1
1(2BR
RA
B
L n
x
Bmx µ
µ
LW
LW
BRg
1
5
)/(
)/()
11(
2
RDSTOT >> RL Transistor length ↑ Trade-off: BB <=> temp/RAD tolerance
[B.Razavi]
[Sean Nicalson et al.]
Presentation: Jens Verbeeck 15
Temperature simulations
Degradation with bias : 2.5 %
Temperature sweep from 0°C to 100°C
Gain =14dBGBW = 2.5GhzBB = 500MHz
Presentation: Jens Verbeeck 16
Radiation simulations
Degradation with bias : 0.85 %
Amplifier irradiated up to 300kGy
Presentation: Jens Verbeeck 17
Results
Temperature drift 5.6 % or 343 ppm/°C
Radiation up to 100 kGyGain degradation 4.5%
Presentation: Jens Verbeeck 18
Results: RadiationCause degradation?
THsens
GSTH
THsensGSTH
V
V
V
BVgm
gm
)1
1(
1
VTHsens = Standard deviation
before radiation of M1 and M2 ∆ VTHsens = Variation of VTHsens
Impact of a ∆VTHsens of 10% on the gain of the amplifier.
Large VGS –VTH for high radiation tolerance
gm = 2*IDS/(VGS-VTH) => IDS↑↑ & VDSsat ↑↑
Presentation: Jens Verbeeck 19
Layout
Presentation: Jens Verbeeck 20
Outline
Introduction
Radiation and temperature effects
Constant gm amplifier
Matching structure
Conclusions
Presentation: Jens Verbeeck 21
Matching
Standard deviation between identical components fabricated on the same chip=>small statistic variations = MISMATCH
Good matching good PSRR, CMRR Important for replica biasing Reduces offset
Matching of Vth depends strongly on area transistor
LW
Avthvth
*
Presentation: Jens Verbeeck 22
Matching Layout transistors on chip
Drains connected in each column Gates connected in each row Shared source and bulk 6 regular transistors, 6 Enclosed layout transistors [G. Annelie et al.]
Presentation: Jens Verbeeck 23
Radiation effects up to RD of 100kGy
Decrease of VTH Rebound effect
RINCE effect [F. Faccio] Different effect for large gates Radiation Induced Narrow Channel Effect
Standard deviation VTH –shift! =>
No significant effects
Regular NMOS transistors
ELT transistors
THsens
GSTH
THsensGSTH
V
V
V
BVgm
gm
)1
1(
1
Presentation: Jens Verbeeck 24
Outline
Introduction
Radiation and temperature effects
Constant gm amplifier
Transistor measurements
Conclusions
Presentation: Jens Verbeeck 25
Conclusions Effects of radiation and temperature
Change of transistor parameters Varying gain
Gain can be held stable with constant gm amplifier BW and GBW of optical receiver guaranteed Open loop control Generate bias voltages for whole chip with gm biasing Trade off: bandwidth temperature tolerance Trade off: current consumption & voltage headroom rad. Tolerance
Larger VGS-VTH => VDSsat ↑↑ difficult to keep transistors in saturation at high temperatures.
Matching results Decrease of VTH
VTH-shift depending on transistor width Standard deviation VTH –shift
Presentation: Jens Verbeeck 26
Questions
?Acknowledgments to:
Presentation: Jens Verbeeck 27
References1. M. Manghisoni, L. Ratti, V. Re and V. Speziali, “Radiation
hardness perspectives for the design of analog detector readout circuits in the 0.18-µm CMOS Generation”, Transactions on nuclear science, VOL. 49 NO. 6, December 2002
2. Hugh J. Barnaby, “Total-Dose Effects in Modern Integrated Circuit Technologies” IEEE NSREC, 2005
3. F. Faccio, G. Cervelli, “Radiation-Induced Edge effects in Deep Submicron CMOS transistors”, Transactions on nuclear science, VOL. 52 NO. 6, December 2005
4. M. Willander and H. L. Hartnagel (eds.), High Temperature Electronics, Chapman & Hall, London, 1997.
5. P. C. de Jong, G. C. M. Meijer, and A. H. M. van Roermund, “A 300 °C dynamic feedback instrumentation amplifier,” IEEE J. Solid-State Circuits, vol. 33, no.12, pp. 1999-2009, Dec. 1998.
6. Sean Nicalson and Khoman Phang, “Improvements in biasing and compensation of cmos opamps”, ISCAS 2004
7. B. Razavi, “Design of analog integrated circuits” 8. G. Anelli et al.,“ Radiation tolerant VLSI circuits in standard deep
submicron CMOS technologies for the LHC experiments: Practical design aspects,” IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1690–1696, Dec.1999.