Datasheet - A2C50S65M2-F - ACEPACK™ 2 converter inverter ... · system up to 20 kHz. Product...
Transcript of Datasheet - A2C50S65M2-F - ACEPACK™ 2 converter inverter ... · system up to 20 kHz. Product...
ACEPACKTM 2
Features• ACEPACK™ 2 power module
– DBC Cu Al2O3 Cu• Converter inverter brake topology
– 1600 V, very low drop rectifiers for converter– 650 V, 50 A IGBTs and diodes– Soft and fast recovery diode
• Integrated NTC
Applications• Inverters• Motor drives
DescriptionThis power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 2package with NTC, integrating the advanced trench gate field-stop technology fromSTMicroelectronics. This new IGBT technology represents the best compromisebetween conduction and switching loss, to maximize the efficiency of any convertersystem up to 20 kHz.
Product status
A2C50S65M2-F
Product summary
Order code A2C50S65M2-F
Marking A2C50S65M2-F
Package ACEPACK™ 2
Leads type Press fit contact pins
ACEPACK™ 2 converter inverter brake, 650 V, 50 A trench gate field‑stop M series IGBT with soft diode and NTC
A2C50S65M2-F
Datasheet
DS12341 - Rev 3 - November 2018For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
1.1 Inverter stageLimiting values at TJ = 25 °C, unless otherwise specified.
1.1.1 IGBTs
Table 1. Absolute maximum ratings of the IGBTs, inverter stage
Symbol Description Value Unit
VCES Collector-emitter voltage (VGE = 0 V) 650 V
IC Continuous collector current (TC = 100 °C) 50 A
ICP(1) Pulsed collector current (tp = 1 ms) 100 A
VGE Gate-emitter voltage ±20 V
PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 208 W
TJMAX Maximum junction temperature 175 °C
TJop Operating junction temperature range under switching conditions -40 to 150 °C
1. Pulse width limited by maximum junction temperature
Table 2. Electrical characteristics of the IGBTs, inverter stage
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CESCollector-emitter breakdownvoltage IC = 1 mA, VGE = 0 V 650 V
VCE(sat)(terminal)
Collector-emitter saturationvoltage
VGE = 15 V, IC= 50 A 1.95 2.3 V
VGE = 15 V, IC = 50 A,TJ = 150 ˚C 2.3 V
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 650 V 100 μA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±500 nA
Cies Input capacitanceVCE = 25 V, f = 1 MHz,VGE = 0 V
4150 pF
Coes Output capacitance 170 pF
Cres Reverse transfer capacitance 80 pF
Qg Total gate chargeVCC = 520 V, IC = 50 A,VGE = ±15 V 150 nC
td(on) Turn-on delay time VCC = 300 V, IC = 50 A,
RG = 6.8 Ω, VGE = ±15 V,
di/dt = 2320 A/µs
147 ns
tr Current rise time 17.5 ns
Eon(1) Turn-on switching energy 0.147 mJ
A2C50S65M2-F Electrical ratings
DS12341 - Rev 3 page 2/18
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(off) Turn-off delay time VCC = 300 V, IC = 50 A,
RG = 6.8 Ω, VGE = ±15 V,
dv/dt = 7400 V/µs
105 ns
tf Current fall time 133 ns
Eoff(2) Turn-off switching energy 1.36 mJ
td(on) Turn-on delay time VCC = 300 V, IC = 50 A,
RG = 6.8 Ω, VGE = ±15 V,
di/dt = 2010 A/µs, TJ = 150 °C
147 ns
tr Current rise time 20 ns
Eon(1) Turn-on switching energy 0.318 mJ
td(off) Turn-off delay time VCC = 300 V, IC = 50 A,
RG = 6.8 Ω, VGE = ±15 V,
dv/dt = 6000 V/µs, TJ = 150 °C
104 ns
tf Current fall time 194 ns
Eoff(2) Turn-off switching energy 1.82 mJ
tSC Short-circuit withstand timeVCC ≤ 360 V, VGE ≤ 15 V,TJstart ≤ 150 °C 6 µs
RTHj-cThermal resistance junction-to-case Each IGBT 0.65 0.72 °C/W
RTHc-hThermal resistance case-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.79 °C/W
1. Including the reverse recovery of the diode.2. Including the tail of the collector current.
1.1.2 DiodeLimiting values at TJ = 25 °C, unless otherwise specified.
Table 3. Absolute maximum ratings of the diode, inverter stage
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 650 V
IF Continuous forward current (TC = 100 °C) 50 A
IFP(1) Pulsed forward current (tp = 1 ms) 100 A
TJMAX Maximum junction temperature 175 °C
TJop Operating junction temperature range under switching conditions -40 to 150 °C
1. Pulse width limited by maximum junction temperature
Table 4. Electrical characteristics of the diode, inverter stage
Symbol Parameter Test conditions Min. Typ. Max. Unit
VF(terminal) Forward voltage
IF = 50 A - 1.85 2.65V
IF = 50 A, TJ = 150 ˚C - 1.65
trr Reverse recovery time
IF = 50 A, VR = 300 V,VGE = ±15 V, diF/dt = 2320 A/μs
- 155 ns
Qrr Reverse recovery charge - 2.32 µC
Irrm Reverse recovery current - 41 A
Erec Reverse recovery energy - 0.53 mJ
A2C50S65M2-FInverter stage
DS12341 - Rev 3 page 3/18
Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery timeIF = 50 A, VR = 300 V,
VGE = ±15 V, diF/dt = 2010 A/μs,
TJ = 150 °C
- 270 ns
Qrr Reverse recovery charge - 5.98 µC
Irrm Reverse recovery current - 62 A
Erec Reverse recovery energy - 1.6 mJ
RTHj-cThermal resistance junction-to-case Each diode - 1.0 1.1 °C/W
RTHc-hThermal resistance case-to-heatsink Each diode, λgrease = 1 W/(m·°C) - 0.9 °C/W
1.2 Brake stageLimiting values at TJ = 25 °C, unless otherwise specified.
1.2.1 IGBT
Table 5. Absolute maximum ratings of the IGBT, brake stage
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0) 650 V
IC Continuous collector current (TC = 100 °C) 50 A
ICP(1) Pulsed collector current (tp = 1 ms) 100 A
VGE Gate-emitter voltage ±20 V
PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 208 W
TJMAX Maximum junction temperature 175 °C
TJop Operating junction temperature range under switching conditions -40 to 150 °C
1. Pulse width limited by maximum junction temperature
Table 6. Electrical characteristics of the IGBT, brake stage
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CESCollector-emitter breakdownvoltage IC = 1 mA, VGE = 0 V 650 V
VCE(sat)(terminal)
Collector-emitter saturationvoltage
VGE = 15 V, IC = 50 A 1.95
VVGE = 15 V, IC = 50 A,TJ = 150 ˚C 2.3
VGE(th) Gate threshold voltage VCE = VGE, IC = 1mA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 650 V 100 µA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ± 500 nA
Cies Input capacitanceVCE = 25 V, f = 1 MHz,VGE = 0 V
4150 pF
Coes Output capacitance 170 pF
Cres Reverse transfer capacitance 80 pF
Qg Total gate chargeVCC = 520 V, IC = 50 A,VGE = ±15 V 150 nC
A2C50S65M2-FBrake stage
DS12341 - Rev 3 page 4/18
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VCC = 300 V, IC = 50 A,
RG = 6.8 Ω, VGE = ±15 V,
di/dt = 2320 A/µs
147 ns
tr Current rise time 17.5 ns
Eon(1) Turn-on switching energy 0.147 mJ
td(off) Turn-off delay time VCC = 300 V, IC = 50 A,
RG = 6.8 Ω, VGE = ±15 V,
dv/dt = 7400 V/µs
105 ns
tf Current fall time 133 ns
Eoff(2) Turn-off switching energy 1.36 mJ
td(on) Turn-on delay time VCC = 300 V, IC = 50 A,
RG = 6.8 Ω, VGE = ±15 V,
di/dt = 2010 A/µs, TJ = 150 °C
147 ns
tr Current rise time 20 ns
Eon(1) Turn-on switching energy 0.318 mJ
td(off) Turn-off delay time VCC = 300 V, IC = 50 A,
RG = 6.8 Ω, VGE = ±15 V,
dv/dt = 6000 V/µs, TJ = 150 °C
104 ns
tf Current fall time 194 ns
Eoff(2) Turn-off switching energy 1.82 mJ
tSC Short-circuit withstand timeVCC ≤ 360 V, VGE≤ 15 V,TJstart ≤ 150 °C 6 µs
RTHj-cThermal resistance junction-to -case Each IGBT 0.65 0.72 °C/W
RTHc-hThermal resistance case-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.79 °C/W
1. Including the reverse recovery of the diode2. Including the tail of the collector current
1.2.2 Diode
Table 7. Absolute maximum ratings of the diode, brake stage
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 650 V
IF Continuous forward current (TC = 100 °C) 50 A
IFP (1) Pulsed forward current (tp = 1 ms) 100 A
TJMAX Maximum junction temperature 175 °C
TJop Operating junction temperature range under switching conditions -40 to 150 °C
1. Pulse width limited by maximum junction temperature.
Table 8. Electrical characteristics of the diode, brake stage
Symbol Parameter Test conditions Min. Typ. Max. Unit
VF (terminal) Forward voltageIF = 50 A - 1.85
VIF = 50 A, TJ = 150 ˚C - 1.65
trr Reverse recovery time
IF = 50 A, VR = 300 V,VGE = ±15 V, di/dt = 2320 A/μs
- 155 ns
Qrr Reverse recovery charge - 2.32 µC
Irrm Reverse recovery current - 41 A
Erec Reverse recovery energy - 0.53 mJ
A2C50S65M2-FBrake stage
DS12341 - Rev 3 page 5/18
Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery timeIF = 50 A, VR = 300 V,
VGE = ±15 V, di/dt = 2010 A/μs,
TJ = 150 °C
- 270 ns
Qrr Reverse recovery charge - 5.98 µC
Irrm Reverse recovery current - 62 A
Erec Reverse recovery energy - 1.6 mJ
RTHj-cThermal resistance junction-to-case Each diode - 1.0 1.1 °C/W
RTHc-hThermal resistance case-to-heatsink Each diode, λgrease = 1 W/(m·°C) - 0.9 °C/W
1.3 Converter stageLimiting values at TJ = 25 °C, unless otherwise specified.
Table 9. Absolute maximum ratings of the bridge rectifiers
Symbol Description Value Unit
VRRM Repetitive peak reverse voltage 1600 V
IF RMS forward current 50 A
IFSMForward surge current tp = 10 ms, TC = 25 °C 450
AForward surge current tp = 10 ms, TC = 150 °C 365
I2ttp = 10 ms, TC = 25 °C 1012
A2stp = 10 ms, TC = 150 °C 666
TJMAX Maximum junction temperature 175 °C
TJop Operating junction temperature range under switching conditions -40 to 150 °C
Table 10. Electrical characteristics of the bridge rectifiers
Symbol Parameter Test conditions Min. Typ. Max. Unit
VF(terminal) Forward voltage
IF = 50 A - 1.23 1.6V
IF = 50 A, TJ = 150 ˚C - 1.14
IR Reverse current TJ = 150 ˚C, VR = 1600 V - 1 mA
RTHj-cThermal resistance junction-to-case Each diode - 1.00 1.10 °C/W
RTHc-hThermal resistance case-to-heatsink Each diode, λgrease = 1 W/(m·°C) - 0.95 °C/W
A2C50S65M2-FConverter stage
DS12341 - Rev 3 page 6/18
1.4 NTC
Table 11. NTC temperature sensor, considered as stand-alone
Symbol Parameter Test conditions Min. Typ. Max. Unit
R25 Resistance T = 25 °C 5 kΩ
R100 Resistance T = 100 °C 493 Ω
ΔR/R Deviation of R100 -5 +5 %
B25/50 B-constant 3375 K
B25/80 B-constant 3411 K
T Operating temperature range -40 150 °C
Figure 1. NTC resistance vs temperature
GADG260720171142NTC
10 4
10 3
10 2 0 25 50 75 100 125
R (Ω)
TC (°C)
Figure 2. NTC resistance vs temperature, zoom
GADG260720171151NTCZ
800
700
600
500
400
30085 90 95 100 105 110
R (Ω)
TC (°C)
max
min
typ
1.5 Package
Table 12. ACEPACK™ 2 package
Symbol Parameter Min. Typ. Max. Unit
Visol Isolation voltage (AC voltage, t = 60 s) 2500 Vrms
Tstg Storage temperature -40 125 °C
CTI Comparative tracking index 200
Ls Stray inductance module P1 - EW loop 33.5 nH
Rs Module single lead resistance, terminal to chip 3.6 mΩ
A2C50S65M2-FNTC
DS12341 - Rev 3 page 7/18
2 Electrical characteristics (curves)
Figure 3. IGBT output characteristics(VGE = 15 V, terminal)
IGBT111020170929TCH
80
60
40
20
00 1 2 3 4
Ic (A)
VCE (V)
TJ = 25 °C
TJ = 150 °C
Figure 4. IGBT output characteristics(TJ = 150 °C ,terminal)
IGBT101020171341OC25
90
80
70
60
50
40
30
20
1000 1 2 3 4
IC (A)
VCE (V)
19 V
17 V
15 V
13 V
11 V
VGE = 9 V
Figure 5. IGBT transfer characteristics(VCE = 15 V, terminal)
IGBT101020171339OC25
80
60
40
20
05 6 7 8 9 10 11 12
IC (A)
VGE (V)
TJ = 25 °C
TJ = 150 °C
Figure 6. IGBT collector current vs case temperature
IGBT051120181512CCT
100
80
60
40
20
00 25 50 75 100 125 150
IC (A)
TC (°C)
VCC = 15 V, TJ ≤ 175 °C
A2C50S65M2-FElectrical characteristics (curves)
DS12341 - Rev 3 page 8/18
Figure 7. Switching energy vs gate resistance
IGBT161020171415SLG
4
3
2
1
00 20 40 60 80
E (mJ)
RG (Ω)
VCC = 300 V, IC = 50 A, VGE = ±15 V
EON (TJ = 150°C)
EOFF (TJ = 150°C)
EON (TJ = 25°C)
EOFF (TJ = 25°C)
Figure 8. Switching energy vs collector current
IGBT161020171419SLC
3
2
1
010 30 50 70 90
E (mJ)
IC (A)
VCC = 300 V, RG = 6.8 Ω, VGE = 15 V
EOFF (TJ = 150°C)
EON (TJ = 150°C)
EON (TJ = 25°C)
EOFF (TJ = 25°C)
Figure 9. IGBT reverse biased safe operating area(RBSOA)
IGBT101020171353OC25
50
40
30
20
10
00 100 200 300 400 500 600
IC (A)
VCE (V)
TJ = 125 °C, VGE = ±15 V, RG = 6.8 Ω
Figure 10. Diode forward characteristics (terminal)
IGBT101020171356DVF
80
60
40
20
00 0.4 0.8 1.2 1.6 2.0 VF (V)
IF(A)
TJ = 150 °C
TJ = 25 °C
Figure 11. Diode reverse recovery energy vs diode currentslope
IGBT161020171422RRE
1.5
1.2
0.9
0.6
0.3
0200 750 1300 1850
Erec (mJ)
di/dt (A/µs)
VCE = 300 V, VGE = ±15 V, IF = 50 A
TJ =150°C
TJ =25°C
Figure 12. Diode reverse recovery energy vs forwardcurrent
IGBT161020171427DVF
2.0
1.6
1.2
0.8
0.4
010 30 50 70 90
Erec (mJ)
IF (A)
TJ = 150 °C
TJ = 25 °C
VCE = 300 V, RG = 6.8 Ω, VGE = ±15 V
A2C50S65M2-FElectrical characteristics (curves)
DS12341 - Rev 3 page 9/18
Figure 13. Diode reverse recovery energy vs gateresistance
IGBT161020171430SLG
1.5
1.2
0.9
0.6
0.3
00 20 40 60 80
Erec (mJ)
RG (Ω)
VCE = 300 V, IF = 50 A, VGE = ±15 V
TJ = 150 °C
TJ = 25 °C
Figure 14. Converter diode forward characteristics(terminal)
IGBT161020171431DVF
80
60
40
20
00 0.4 0.8 1.2
IF (A)
VF (V)
TJ = 150 °C
TJ = 25 °C
Figure 15. IGBT thermal impedance
IGBT161020171434ZTH
10 0
10 -1
10 -3 10 -2 10 -1 10 0
Zth (°C/W)
t (s)
Zth (typ.) JH
Zth (max.) JC
JC
i 1 2 3 4ri (˚C/W) 0.0781 0.2997 0.2348 0.1033τi(s) 0.0002 0.0065 0.0344 0.2723
JH
i 1 2 3 4ri (˚C/W) 0.0832 0.3154 0.6593 0.3770τi(s) 0.0003 0.0104 0.0701 0.3228
RC - Foster thermal network
RC - Foster thermal network
Figure 16. Inverter diode thermal impedance
IGBT161020171435ZTHMT
10 0
10 -1
10 -3 10 -2 10 -1 10 0
Zth (°C/W)
t (s)
Zth (typ.) JH
Zth (max.) JC
JC
i 1 2 3 4ri (˚C/W) 0.1741 0.4993 0.2989 0.1226τi(s) 0.0008 0.0076 0.0405 0.2723
JH
i 1 2 3 4ri (˚C/W) 0.2109 0.5538 0.7885 0.3415τi(s) 0.0010 0.0126 0.0785 0.3410
RC - Foster thermal network
RC - Foster thermal network
A2C50S65M2-FElectrical characteristics (curves)
DS12341 - Rev 3 page 10/18
3 Test circuits
Figure 17. Test circuit for inductive load switching
A AC
E
G
B
RG+
-
G
C 3.3µF
1000µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
Figure 18. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 19. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
ICTd(on)
TonTr(Ion)
Td(off)
ToffTf
Tr(Voff)
Tcross
90%
10%
Figure 20. Diode reverse recovery waveform
25
A2C50S65M2-FTest circuits
DS12341 - Rev 3 page 11/18
4 Topology and pin description
Figure 21. Electrical topology and pin description
L3
L1L2
P
N
P1
GB
B
NB
T1U
T2
VW
EU EV EW
G1
G2
G3
G4
G5
G6
Figure 22. Package top view with CIB pinout
L3
P1
B
GBG6EW
L3
L2
L2
L1
L1 PP
N
G13G V V
G5
T2
T1
EW G4EV EV G2EU EU NB
P1
W W U U
N
A2C50S65M2-FTopology and pin description
DS12341 - Rev 3 page 12/18
5 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.
A2C50S65M2-FPackage information
DS12341 - Rev 3 page 13/18
5.1 ACEPACK™ 2 CIB press fit contact pins package information
Figure 23. ACEPACK™ 2 CIB press fit contact pins package outline (dimensions are in mm)
56.7±0.3
51±0.15
22.7±0.3
16.4±0.2
4.5±0.1
1.3±0.2
2.5±0.2
62.
8±0.
5
48±
0.3
53±
0.1
42.5
±0.
2
52.7 REF
37
REF
Detail A 3.5 REF x45°
2.3
REF
8.5
0.00
9.60
16.00
19.20
22.40
25.60
28.80
32.000.
00
3.20
6.40
9.60
12.8
0
16.0
019
.20
22.4
0
25.6
0
28.8
0
32.0
0
35.2
0
38.4
0
41.6
0
44.8
0
48.0
0
12.80
L3
P1
B
GBG6EW
L3
L2
L2
L1
L1 P
N
UG13G V VW
G5
T2
T1
EW G4EV EV G2EU EU NB
P1
3.2
BSC
P
N
W U
8569722_ACEPACK2_CIB_Press_fit_contact_pins_rev4
12±
0.35
16.4
±0.
5
AA
3.2 BSC
• The lead size includes the thickness of the lead plating material.• Dimensions do not include mold protrusion.• Package dimensions do not include any eventual metal burrs.
A2C50S65M2-FACEPACK™ 2 CIB press fit contact pins package information
DS12341 - Rev 3 page 14/18
Figure 24. ACEPACK™ 2 CIB press fit contact pins recommended PCB holes layout (dimensions are inmm)
8569722_ACEPACK2_CIB_Press_fit_contact_pins_PCBholes_rev4
A2C50S65M2-FACEPACK™ 2 CIB press fit contact pins package information
DS12341 - Rev 3 page 15/18
Revision history
Table 13. Document revision history
Date Revision Changes
16-Oct-2017 1 Initial release.
16-Mar-2018 2
Removed maturity status indication from cover page. The document status isproduction data.
Updated features on cover page.
Updated Table 10. Electrical characteristics of the bridge rectifiers.
Updated Figure 14. IGBT thermal impedance and Figure 15. Inverter diodethermal impedance.
Updated Figure 22. ACEPACK™ 2 CIB press fit contact pins package outline(dimensions are in mm) and Figure 23. ACEPACK™ 2 CIB press fit pinsrecommended PCB holes layout (dimensions are in mm).
Minor text changes
14-Nov-2018 3Added Figure 6. IGBT collector current vs case temperature.
Minor text changes
A2C50S65M2-F
DS12341 - Rev 3 page 16/18
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
1.1 Inverter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1.1 IGBTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Brake stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.2.1 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.2.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.3 Converter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.4 NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.5 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4 Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
5.1 ACEPACK™ 2 CIB press fit contact pins package information . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
A2C50S65M2-FContents
DS12341 - Rev 3 page 17/18
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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A2C50S65M2-F
DS12341 - Rev 3 page 18/18