Datasheet - A1C15S12M3-F - ACEPACK™ 1 converter inverter ...

ACEPACK™ 1

Features• ACEPACK™ 1 power module

– DBC Cu Al2O3 Cu• Converter inverter brake topology

– 1600 V, very low drop rectifiers for converter– 1200 V, 15 A IGBTs and diodes– Soft and fast recovery diode

• Integrated NTC

Applications• Inverters• Motor drives

DescriptionThis power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 1package with NTC, integrating the advanced trench gate field-stop technology fromSTMicroelectronics. This new IGBT technology represents the best compromisebetween conduction and switching loss, to maximize the efficiency of any convertersystem up to 20 kHz.

Product status link

A1C15S12M3-F

Product summary

Order code A1C15S12M3-F

Marking A1C15S12M3-F

Package ACEPACK™ 1

Leads type Press fit contact pins

ACEPACK™ 1 converter inverter brake, 1200 V, 15 A, trench gate field‑stop M series IGBT with soft diode and NTC

A1C15S12M3-F

Datasheet

DS10963 - Rev 7 - November 2018For further information contact your local STMicroelectronics sales office.

www.st.com

https://www.st.com/en/product/a1c15s12m3-f

1 Electrical ratings

1.1 Inverter stageLimiting values at TJ = 25 °C, unless otherwise specified.

1.1.1 IGBTs

Table 1. Absolute maximum ratings of the IGBTs, inverter stage

Symbol Description Value Unit

VCES Collector-emitter voltage (VGE = 0) 1200 V

IC Continuous collector current at TC = 100 °C 15 A

ICP (1) Pulsed collector current (tp = 1 ms) 30 A

VGE Gate-emitter voltage ± 20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 142.8 W

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBTs, inverter stage

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdownvoltage IC = 1 mA, VGE = 0 V 1200 V

VCE(sat)(terminal)

Collector-emitter saturationvoltage

VGE = 15 V, IC= 15 A 1.95 2.45 V

VGE = 15 V, IC = 15 A, TJ = 150 ˚C 2.3 V

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 μA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V ± 500 nA

Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

985 pF

Coes Output capacitance 118 pF

Cres Reverse transfer capacitance 40 pF

Qg Total gate charge VCC = 960 V, IC = 15 A, VGE = ±15 V 71 nC

td(on) Turn-on delay timeVCC = 600 V, IC = 15 A, RG = 22 Ω,

VGE = ±15 V, di/dt = 820 A/µs

120 ns

tr Current rise time 14.5 ns

Eon(1) Turn-on switching energy 0.59 mJ

td(off) Turn-off delay time VCC = 600 V, IC = 15 A,

RG = 22 Ω, VGE = ±15 V,

dv/dt = 8200 V/µs

115 ns

tf Current fall time 84 ns

Eoff(2) Turn-off switching energy 0.83 mJ

A1C15S12M3-F Electrical ratings

DS10963 - Rev 7 page 2/20


td(on) Turn-on delay time VCC = 600 V, IC = 15 A,

RG = 22 Ω, VGE = ±15 V,

di/dt = 690 A/µs, TJ = 150 °C

122 ns

tr Current rise time 17 ns

Eon (1) Turn-on switching energy 1.08 mJ


RG = 22 Ω, VGE = ±15 V,

dv/dt = 7000 V/µs, TJ = 150 °C

122 ns


Eoff (2) Turn-off switching energy 1.06 mJ

tSC Short-circuit withstand timeVCC ≤ 600V, VGE ≤ 15 V,

TJstart ≤ 150 °C10 µs

RTHj-cThermal resistance junction-to-case Each IGBT 0.95 1.05 °C/W

RTHc-hThermal resistance case-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.90 °C/W

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

A1C15S12M3-FInverter stage

DS10963 - Rev 7 page 3/20

1.1.2 DiodeLimiting values at TJ = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode, inverter stage

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 1200 V

IF Continuous forward current (TC = 100 °C) 15 A

IFP(1) Pulsed forward current (tp = 1 ms) 30 A




Table 4. Electrical characteristics of the diode, inverter stage


VF(terminal) Forward voltage

IF = 15 A - 3.0 3.8V

IF = 15 A, TJ = 150 ˚C - 2.1

trr Reverse recovery time

IF = 15 A, VR = 600 V,

VGE = ±15 V, diF/dt = 820 A/μs

- 190 ns

Qrr Reverse recovery charge - 1.45 µC

Irrm Reverse recovery current - 23 A

Erec Reverse recovery energy - 0.55 mJ

trr Reverse recovery timeIF = 15 A, VR = 600 V,

VGE = ±15 V, diF/dt = 690 A/μs,

TJ = 150 °C

- 400 ns




RTHj-cThermal resistance junction-to-case Each diode - 1.60 1.75 °C/W

RTHc-hThermal resistance case-to-heatsink Each diode, λgrease = 1 W/(m·°C) - 1.15 °C/W

A1C15S12M3-FInverter stage

DS10963 - Rev 7 page 4/20

1.2 Brake stageLimiting values at TJ = 25 °C, unless otherwise specified.

1.2.1 IGBT

Table 5. Absolute maximum ratings of the IGBT, brake stage


VCES Collector-emitter voltage (VGE = 0) 1200 V

IC Continuous collector current (TC = 100 °C) 15 A

ICP(1) Pulsed collector current (tp = 1 ms) 30 A

VGE Gate-emitter voltage ±20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 142.8 W




Table 6. Electrical characteristics of the IGBT, brake stage


V(BR)CESCollector-emitter breakdownvoltage IC = 1 mA, VGE = 0 V 1200 V

VCE(sat)(terminal)

Collector-emitter saturationvoltage

VGE = 15 V, IC = 15 A 1.95 2.45V

VGE = 15 V, IC = 15 A, TJ = 150 ˚C 2.3

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ± 500 nA

Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

985 pF

Coes Output capacitance 118 pF

Cres Reverse transfer capacitance 40 pF

Qg Total gate charge VCC = 960 V, IC = 15 A, VGE = ±15 V 71 nC


RG = 22 Ω, VGE = ±15 V,

di/dt = 820 A/µs

120 ns

tr Current rise time 14.5 ns

Eon(1) Turn-on switching energy 0.59 mJ


RG = 22 Ω, VGE = ±15 V,

dv/dt = 8200 V/µs

115 ns


Eoff(2) Turn-off switching energy 0.83 mJ


RG = 22 Ω, VGE = ±15 V,

di/dt = 690 A/µs, TJ = 150 °C

122 ns

tr Current rise time 17 ns

Eon Turn-on switching energy 1.08 mJ

A1C15S12M3-FBrake stage

DS10963 - Rev 7 page 5/20



RG = 22 Ω, VGE = ±15 V,

dv/dt = 7000 V/µs, TJ = 150 °C

122 ns


Eoff Turn-off switching energy 1.06 mJ

tSC Short-circuit withstand timeVCC ≤ 600 V, VGE≤ 15 V,

TJstart ≤ 150 °C10 µs

RTHj-cThermal resistance junction-to-case Each IGBT 0.95 1.05 °C/W

RTHc-hThermal resistance case-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.90 °C/W

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.


DS10963 - Rev 7 page 6/20

1.2.2 Diode

Table 7. Absolute maximum ratings of the diode, brake stage



IF Continuous forward current (TC = 100 °C) 15 A

IFP(1) Pulsed forward current (tp = 1 ms) 30 A




Table 8. Electrical characteristics of the diode, brake stage


VF(terminal) Forward voltageIF = 15 A - 3.0 3.8

VIF = 15 A, TJ = 150 ˚C - 2.1

trr Reverse recovery time

IF = 15 A, VR = 600 V,

VGE = ±15 V, di/dt = 820 A/μs

- 190 ns




trr Reverse recovery timeIF = 15 A, VR = 600 V,

VGE = ±15 V, di/dt = 690 A/μs,

TJ = 150 °C

- 400 ns







DS10963 - Rev 7 page 7/20

1.3 Converter stageLimiting values at TJ = 25 °C, unless otherwise specified.

Table 9. Absolute maximum ratings of the bridge rectifiers

Symbol Description Value Unit


IF RMS forward current 30 A

IFSMForward surge current tp = 10 ms, TC = 25 °C 315

AForward surge current tp = 10 ms, TC = 150 °C 250

I2ttp = 10 ms, TC = 25 °C 496

A2stp = 10 ms, TC = 150 °C 312



Table 10. Electrical characteristics of the bridge rectifiers


VF(terminal) Forward voltage

IF = 15 A - 1.0 1.4V

IF = 15 A, TJ = 150 ˚C - 0.9

IR Reverse current TJ = 150 ˚C, VR = 1600 V - 1 mA



A1C15S12M3-FConverter stage

DS10963 - Rev 7 page 8/20

1.4 NTC

Table 11. NTC temperature sensor, considered as stand-alone

Symbol Parameter Test condition Min. Typ. Max. Unit

R25 Resistance T = 25 °C 5 kΩ

R100 Resistance T = 100 °C 493 Ω

ΔR/R Deviation of R100 -5 +5 %

B25/50 B-constant 3375 K

B25/80 B-constant 3411 K

T Operating temperature range -40 150 °C

Figure 1. NTC resistance vs temperature

GADG260720171142NTC

10 4

10 3

10 2 0 25 50 75 100 125

R (Ω)

TC (°C)

Figure 2. NTC resistance vs temperature, zoom

GADG260720171151NTCZ

800

700

600

500

400

30085 90 95 100 105 110

R (Ω)

TC (°C)

max

min

typ

1.5 Package

Table 12. ACEPACK™ 1 package

Symbol Parameter Min. Typ. Max. Unit

Visol Isolation voltage (AC voltage, t = 60 s) 2500 Vrms

Tstg Storage temperature -40 125 °C

CTI Comparative tracking index 200

Ls Stray inductance module P1 - EW loop 28.7 nH

Rs Module single lead resistance , terminal-to-chip 3.9 mΩ

A1C15S12M3-FNTC

DS10963 - Rev 7 page 9/20

2 Electrical characteristics (curves)

Figure 3. IGBT output characteristics(VGE = 15 V, terminal)

IGBT021220161342OC15

25

20

15

10

5

00 0.5 1 1.5 2 2.5 3 3.5

IC (A)

VCE (V)

TJ = 25 °C

TJ = 150 °C

Figure 4. IGBT output characteristics(TJ = 150 °C, terminal)

IGBT021220161344OC150

25

20

15

10

5

00 1 2 3 4

IC (A)

VCE (V)

VGE = 19 V

15 V

9 V

11 V

13 V17 V

Figure 5. IGBT transfer characteristics(VCE = 15 V, terminal)

IGBT021220161402TCH

25

20

15

10

5

05 6 7 8 9 10 11

IC (A)

VGE (V)

VCE = 15 V

TJ = 25 °C

TJ = 150 °C

Figure 6. IGBT collector current vs case temperature

IGBT161020181203CCT

35

30

25

20

15

10

5

00 25 50 75 100 125 150

IC (A)

TC (°C)

VCC = 15 V, TJ ≤ 175 °C

Figure 7. Switching energy vs gate resistance

IGBT260720171311SLG

7

6

5

4

3

2

1

00 50 100 150 200 250 300

E (mJ)

RG (Ω)

VCC = 600 V, VGE = ±15 V, IC = 15 A

Eon (TJ = 150 °C)

Eoff (TJ = 25°C)

Eon (TJ = 25 °C)

Eoff (TJ = 150°C)

Figure 8. Switching energy vs collector current

IGBT260720171327SLC

2.5

2.0

1.5

1.0

0.5

00 5 10 15 20 25

E (mJ)

IC (A)

VCC = 600 V, RG = 22 Ω, VGE = ±15 V

Eoff (TJ = 150 °C)

Eon (TJ = 150 °C)

Eon (TJ = 25°C)

Eoff (TJ = 25°C)

A1C15S12M3-FElectrical characteristics (curves)

DS10963 - Rev 7 page 10/20

Figure 9. IGBT reverse biased safe operating area(RBSOA)

IGBT021220161423FSOA

30

25

20

15

10

5

00 200 400 600 800 1000 1200

IC (A)

VCE (V)

TJ = 125 °C, VGE = ±15 V, RG = 22 Ω

Figure 10. Diode forward characteristics (terminal)

IGBT021220161506DVF

25

20

15

10

5

00 1 2 3 4

IF (A)

VF (V)

TJ = 150 °C

TJ = 25 °C

Figure 11. Diode reverse recovery energy vs diode currentslope

IGBT240820171455Erec

1.4

1.2

1.0

0.8

0.6

0.4

0.2

00 200 400 600 800

Erec (mJ)

di/dt (A/µs)

TJ = 150 °C

TJ = 25 °C

VCE = 600 V, IF = 15 A, VGE = ±15 V

Figure 12. Diode reverse recovery energy vs forwardcurrent

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.200 5 10 15 20 25

Erec (mJ)

IF (A)

IGBT240820171500RREFC

TJ = 150 °C

TJ = 25 °C

VCE = 600 V, RG = 22 Ω, VGE = ±15 V

Figure 13. Diode reverse recovery energy vs gateresistance

IGBT240820171516RRE

1.4

1.2

1.0

0.8

0.6

0.4

0.2

00 50 100 150 200 250

Erec (mJ)

RG (Ω)

TJ = 150 °C

TJ = 25 °C

VCE = 600 V, IF = 15 A, VGE = ±15 V

Figure 14. Converter diode forward characteristics(terminal)

IGBT021220161527CDFC

25

20

15

10

5

00 0.2 0.4 0.6 0.8 1 1.2

IF (A)

VF (V)

TJ = 25 °CTJ = 150 °C


DS10963 - Rev 7 page 11/20

Figure 15. IGBT thermal impedance

GADG240820171446ZTH

10 0

10 -1

10 -3 10 -2 10 -1 10 0

Zth(°C/W)

t (s)

Zth(typ.)JH

Zth(max.)JC

JC

i 1 2 3 4ri (˚C/W) 0.1482 0.4802 0.2979 0.1220τi (s) 0.0003 0.0066 0.0309 0.2750

RC - Foster thermal network

JH

i 1 2 3 4ri (˚C/W) 0.1589 0.5231 0.7198 0.4488τi (s) 0.0004 0.0097 0.0616 0.3274


Figure 16. Inverter diode thermal impedance

10 0

10 -1

10 -3 10 -2 10 -1 10 0

Zth(°C/W)

t (s)

Zth(typ.)JHZth(max.)JC

IGBT240820171523DNZTH

JC

i 1 2 3 4ri (˚C/W) 0.3364 0.7389 0.4543 0.2159τi (s) 0.0008 0.0064 0.0361 0.2530


JH

i 1 2 3 4ri (˚C/W) 0.3747 0.7300 0.9861 0.6526τi (s) 0.0010 0.0094 0.0636 0.3075



DS10963 - Rev 7 page 12/20

3 Test circuits

Figure 17. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 18. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 19. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

ICTd(on)

TonTr(Ion)

Td(off)

ToffTf

Tr(Voff)

Tcross

90%

10%

Figure 20. Diode reverse recovery waveform

25

A1C15S12M3-FTest circuits

DS10963 - Rev 7 page 13/20

4 Topology and pin description

Figure 21. Electrical topology and pin description

L3

L1L2

P

N

P1

GB

B

NB

T1U

T2

VW

EU EV EW

G1

G2

G3

G4

G5

G6

Figure 22. Package top view with CIB pinout

L1

L2 L3

G5

W

G3

V

G1

U

T1

T2

P

B

NB

GB

G6

EW

G4

EV

G2

EU

N

P1

GIPD270320151420FSR

A1C15S12M3-FTopology and pin description

DS10963 - Rev 7 page 14/20

5 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.

A1C15S12M3-FPackage information

DS10963 - Rev 7 page 15/20

https://www.st.com/ecopack

http://www.st.com

5.1 ACEPACK™ 1 CIB press fit pins package information

Figure 23. ACEPACK™ 1 CIB press fit pins package outline (dimensions are in mm)

S ID E V IE W

T O P V IE W

Detail A

Section B-B

4.5±0.1

48±

0.3

41±

0.2

62.8

±0.

5

16.4±0.2

19.4±0.2

33.8±0.353

±0.

1

42.5

±0.2

28.1±0.2

16.4

±0.

50

3.2

BSC

2.5±0.2

1.3±0.2

36.8

REF

3.5 REF x45°

8.5

2.3

REF

A A

B

B

25.6

0

19.2

0

16.0

0

12.8

0

6.40

0.00

32.00

25.60

22.40

19.20

16.00

12.80

9.60

0.00

6.40

3.20

L1

L2 L3

G5

W

G3

V

G1

U

T1

T2

P

B

NB

GB

G6

EW

G4

EV

G2

EU

N

P1

8569715_4

12±

0.35

3.2 BSC

• The lead size includes the thickness of the lead plating material.• Dimensions do not include mold protrusion.• Package dimensions do not include any eventual metal burrs.

A1C15S12M3-FACEPACK™ 1 CIB press fit pins package information

DS10963 - Rev 7 page 16/20

Figure 24. ACEPACK™ 1 CIB press fit pins recommended PCB holes layout (dimensions are in mm)

8569715_4

A1C15S12M3-FACEPACK™ 1 CIB press fit pins package information

DS10963 - Rev 7 page 17/20

Revision history

Table 13. Document revision history

Date Revision Changes

01-Feb-2016 1 Initial release.

03-Feb-2016 2Updated Table 3: "Electrical characteristics of the IGBTs, inverter stage".

Minor text changes.

28-Jul-2017 3

Product status changed from preliminary to production data.

Added Electrical characteristics curves.

Minor text changes.

30-Aug-2017 4

Updated Table 3: "Electrical characteristics of the IGBTs, inverter stage",Table 5: "Electrical characteristics of the diode, inverter stage", Table 7:"Electrical characteristics of the IGBT, brake stage", Table 5: "Electricalcharacteristics of the diode, inverter stage", Table 11: "Electricalcharacteristics of the bridge rectifiers", Section 2: "Electrical characteristicscurves".

Minor text changes.

05-Oct-2017 5

Updated Table 12. ACEPACK™ 1 package, Figure 21. IGBT thermalimpedance, Figure 22. Inverter

diode thermal impedance and Section 5.1 ACEPACK™ 1 CIB press fit pinspackage information.

Minor text changes.

15-Feb-2018 6

Removed maturity status indication from cover page.

Updated Figure 22. ACEPACK™ 1 CIB press fit pins package outline(dimensions are in mm) and Figure 23. ACEPACK™ 1 CIB press fit pinsrecommended PCB holes layout (dimensions are in mm).

Minor text changes.

14-Nov-2018 7Added Figure 6. IGBT collector current vs case temperature.

Minor text changes

A1C15S12M3-F

DS10963 - Rev 7 page 18/20

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

1.1 Inverter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.1.1 IGBTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.1.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

1.2 Brake stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

1.2.1 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

1.2.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

1.3 Converter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

1.4 NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

1.5 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

2 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

4 Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

5.1 ACEPACK™ 1 CIB press fit pins package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

A1C15S12M3-FContents

DS10963 - Rev 7 page 19/20

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2018 STMicroelectronics – All rights reserved

A1C15S12M3-F

DS10963 - Rev 7 page 20/20

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