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CSE477 L01 Introduction.1 Irwin&Vijay, PSU, 2003
CSE477VLSI Digital CircuitsFall 2003
Lecture 01: Introduction
Mary Jane Irwin ( www.cse.psu.edu/~mji)www.cse.psu.edu/~cg477
[Adapted from Rabaeys Digital Integrated Circuits, Second Edition, 2003J. Rabaey, A. Chandrakasan, B. Nikolic]
http://www.cse.psu.edu/~mjihttp://www.cse.psu.edu/~cg477http://www.cse.psu.edu/~cg477http://www.cse.psu.edu/~mji -
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CSE477 L01 Introduction.2 Irwin&Vijay, PSU, 2003
Course Contents
Introduction to digitalintegrated circuits
CMOS devices and manufacturing technology. CMOS logicgates and their layout. Propagation delay, noise margins, andpower dissipation. Combinational (e.g., arithmetic) andsequential circuit design. Memory circuit design.
Course goals Ability to design and implement CMOS digitalcircuits and
optimize them with respect to different constraints: size(cost),speed, power dissipation, and reliability
Course prerequisites
EE 310. Electronic Circuit Design
CSE 471. Logic Design of Digital Systems
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Course Administration
Instructor: Mary Jane [email protected]
www.cse.psu.edu/~mji227 Pond LabOffice Hrs: T 16:00-17:00 & W 9:30-10:45
TA: Feihui Li
[email protected] HammondOffice Hrs: TBD
Labs: Accounts on 101 Pond Lab machines
URL: www.cse.psu.edu/~cg477
Text: Digital Integrated Circuits, 2ndEditionRabaey et. al., 2003
Slides: pdf on the course web page after lecture
mailto:[email protected]://www.cse.psu.edu/~mjimailto:[email protected]:[email protected]://www.cse.psu.edu/~mjimailto:[email protected] -
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CSE477 L01 Introduction.4 Irwin&Vijay, PSU, 2003
Grading Information Grade determinates
Midterm Exam ~25%
- Monday, October 20th, 20:15 to 22:15, Location TBD Final Exam ~25%
- Monday, December 15th, 10:10 to noon, Location TBD
Homeworks/Lab Assignments (5) ~20%
- Due at the beginning of class (or, if submitted electronically, by
17:00 on the due date). No lateassignments will be accepted. Design Project (teams of ~2) ~25%
In-class pop quizzes ~ 5%
Please let me know about exam conflictsASAP
Grades will be posted on the course homepage Must submit email request for change of grade after
discussions with the TA (Homeworks/Lab Assignments) orinstructor (Exams)
December 9th deadlinefor filing grade corrections;
no requests for grade changes will be accepted after this date
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CSE477 L01 Introduction.6 Irwin&Vijay, PSU, 2003
Course Structure
Design and tool intensiveclass
Micromagic (MMI) max and sue for layout
- Online documentation and tutorials
HSPICE for circuit simulation
unix (Sun/Solaris) operating system environment
Lectures: 2 weeks on the CMOS inverter
3 weeks on static and dynamic CMOS gates
2 weeks on C, R, and L effects
2 week on sequential CMOS circuits
2 weeks on design of datapath structures
2 weeks on memory design
1 week on design for test, margining, scaling, trends
1 week exams
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Executives might make the final decisions about whatwould be produced, but engineers would provide mostof the ideas for new products. After all, engineerswere the people who really knew the state of the art
and who were therefore best equipped to prophesychanges in it.
The Soul of a New Machine, Kidder, pg 35
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8/23CSE477 L01 Introduction.8 Irwin&Vijay, PSU, 2003
Transistor Revolution
TransistorBardeen (Bell Labs) in 1947
Bipolar transistorSchockley in 1949
First bipolar digital logic gateHarris in 1956
First monolithic ICJack Kilby in 1959
First commercial IC logic gatesFairchild 1960
TTL1962 into the 1990s
ECL1974 into the 1980s
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9/23CSE477 L01 Introduction.9 Irwin&Vijay, PSU, 2003
MOSFET Technology
MOSFET transistor - Lilienfeld (Canada) in 1925 and
Heil (England) in 1935 CMOS1960s, but plagued with manufacturing
problems (used in watches due to their powerlimitations)
PMOS in 1960s (calculators)
NMOS in 1970s (4004, 8080) for speed
CMOS in 1980s preferred MOSFET technology
because of power benefits BiCMOS, Gallium-Arsenide, Silicon-Germanium
SOI, Copper-Low K, strained silicon,
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Moores Law
In 1965, Gordon Moore predicted that the number of
transistors that can be integrated on a die would doubleevery 18 months (i.e., grow exponentially with time).
Amazingly visionarymillion transistor/chip barrier wascrossed in the 1980s. 2300 transistors, 1 MHz clock (Intel 4004) - 1971
16 Million transistors (Ultra Sparc III)
42 Million, 2 GHz clock (Intel P4) - 2001
140 Million transistor (HP PA-8500)
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11/23CSE477 L01 Introduction.11 Irwin&Vijay, PSU, 2003
Moores Law in Microprocessors
40048008
808080858086
286386
486Pentium proc
P6
0.001
0.01
0.1
1
10
100
1000
1970 1980 1990 2000 2010
Year
Transistors(M
T)
2X growth in 1.96 years!
# transistors on lead microprocessors double every 2 years
Courtesy, Intel
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Intel 4004 Microprocessor (10000 nm)
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Intel P2 Microprocessor (280 nm)
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CSE477 L01 Introduction.14 Irwin&Vijay, PSU, 2003
State-of-the Art: Lead Microprocessors
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CSE477 L01 Introduction.16 Irwin&Vijay, PSU, 2003
Die Size Growth
4004
8008
80808085
8086286
386486Pentium proc
P6
1
10
100
1970 1980 1990 2000 2010
Year
Diesize(mm
)
~7% growth per year
~2X growth in 10 years
Die size grows by 14% to satisfy Moores Law
Courtesy, Intel
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CSE477 L01 Introduction.18 Irwin&Vijay, PSU, 2003
Power Dissipation
P6Pentium proc
486
3862868086
80858080
80084004
0.1
1
10
100
1971 1974 1978 1985 1992 2000Year
Power(W
atts)
Lead Microprocessors power continues to increase
Courtesy, Intel
Power delivery and dissipation will be prohibitive
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CSE477 L01 Introduction.19 Irwin&Vijay, PSU, 2003
Power Density
40048008
80808085
8086
286386
486Pentium proc
P6
1
10
100
1000
10000
1970 1980 1990 2000 2010
Year
PowerDensity(W/cm2)
Hot Plate
Nuclear
Reactor
RocketNozzle
Power density too high to keep junctions at low temp
Courtesy, Intel
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CSE477 L01 Introduction.20 Irwin&Vijay, PSU, 2003
Technology Directions: Old SIA Roadmap
Year 1999 2002 2005 2008 2011 2014
Feature size (nm) 180 130 100 70 50 35
Mtrans/cm2 7 14-26 47 115 284 701
Chip size (mm2) 170 170-214 235 269 308 354
Signal pins/chip 768 1024 1024 1280 1408 1472
Clock rate (MHz) 600 800 1100 1400 1800 2200
Wiring levels 6-7 7-8 8-9 9 9-10 10
Power supply (V) 1.8 1.5 1.2 0.9 0.6 0.6
High-perf power (W) 90 130 160 170 174 183
Battery power (W) 1.4 2.0 2.4 2.0 2.2 2.4
For Cost-Performance MPU (L1 on-chip SRAM cache; 32KB/1999doubling every two years)
http://public.itrs.net
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CSE477 L01 Introduction.21 Irwin&Vijay, PSU, 2003
Why Scaling?
Technology shrinks by ~0.7 per generation With every generation can integrate 2x more functions on
a chip; chip cost does not increase significantly
Cost of a function decreases by 2x
But
How to design chips with more and more functions?
Design engineering population does not double every two years
Hence, a need for more efficient design methods Exploit different levels of abstraction
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CSE477 L01 Introduction.22 Irwin&Vijay, PSU, 2003
Design Abstraction Levels
SYSTEM
GATE
CIRCUIT
VoutVin
CIRCUIT
VoutVin
MODULE
+
DEVICE
n+
S D
n+
G
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CSE477 L01 Introduction.24 Irwin&Vijay, PSU, 2003
Major Design Challenges
Microscopic issues
ultra-high speeds
power dissipation andsupply rail drop
growing importance ofinterconnect
noise, crosstalk
reliability,manufacturability
clock distribution
Macroscopic issues
time-to-market
design complexity(millions of gates)
high levels ofabstractions
reuse and IP, portability
systems on a chip (SoC) tool interoperability
Year Tech.
(nm)
Complexity Frequency 3 Yr. Design
Staff Size
Staff Costs
1997 350 13 M Tr. 400 MHz 210 $90 M
1998 250 20 M Tr. 500 MHz 270 $120 M
1999 180 32 M Tr. 600 MHz 360 $160 M
2002 130 130 M Tr. 800 MHz 800 $360 M
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CSE477 L01 Introduction 25 Irwin&Vijay PSU 2003
Next Lecture and Reminders
Next lecture
Design metrics
- Reading assignment1.3
Reminders
Hands on max tutorial
- ?Tuesday? evening from 7:00? to 9:00? pm in 101 Pond Lab
HW1 due September 16th
Project team and title due September 18th
Evening midterm exam scheduled
- Monday, October 20th, 20:15 to 22:15, Location TBD- Please let me know ASAP (via email) if you have a conflict