CSE 477. VLSI Systems Design - German University in Cairoeee.guc.edu.eg/Courses/Electronics/ELCT503...

ELCT 503: Semiconductors German University in Cairo (GUC)

ELCT503

Semiconductors Fall 2014

Lecture 01: Introduction

Dr. Hassan Mostafa

حسن مصطفى. د

[email protected]


Course Outline

Course objectives

This course is basically about the major microelectronics devices that are extremely used in the last 60 years. This includes diodes and transistors


Course contents

Introduction

Semiconductors physics and basics

Physics and circuit modeling (dc & ac) of:

PN junction

BJT transistor

MOSFET transistor


Course Outline

Instructor: Dr. Hassan Mostafa

» [email protected]

Textbook:

S. M. Sze, “Semiconductor Devices: Physics and Technology”, Wiley & So., ISBN 0471333727, 2001

Course Websire

http:// scholar.cu.edu.eg/hmostafa/classes/elct-503

Lecture time: Mondays 1st slot


References

H. Craig Casey (1998). Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors, Wiley & So., ISBN 0471171344.

B. Streetman, S. Banerjee (1999). Solid State Electronic Devices, Prentice Hall, ISBN 0130255386.

R. F. Pierret (1995). Semiconductor Device Fundamentals, Prentice Hall, ISBN 0201543931.

D. A. Neamen (2003). Semiconductor physics and devices: Basic principles, McGraw-Hill, ISBN~0072321075.

T. F. Bogart (1997). Electronic devices and circuits, Prentice Hall, ISBN~0133937607.


Course Grading

method %

Quizzes 15%

Lab performance 10%

Lab project / presentation 15%

Midterm exam 20%

Final exam 40%


Prerequisites

ELCT 301: Electrical Circuits I

ELCT 401: Electrical Circuits II

COMM 402: Electromagnetics

PHYS 202: Theromdynamics

PHYS 301: Atom Physics


semiconductor devices

Semiconductor devices are electronic devices that are fabricated using semiconductor materials such as Silicon, Germanium, and Gallium Arsenide.

Semiconductor devices are available as discrete components (available on shelf in electronics stores)

or can be integrated with a large number of similar devices onto a single chip, called an Integrated Circuit(IC).


Complementary Metal Oxide Semiconductor (CMOS) CMOS is a technology for constructing IC’s. This technology

is used in microprocessors, microcontrollers, Memories, and other

digital logic circuits.

Microprocessor

Microcontroller

RAM


The ability to fabricate billions of

individual components (transistors,

resistors, capacitors, etc.) on a silicon

chip with an area of a few cm2 has

enabled the information age.

Shrinking geometries permit more

devices to be placed in a given are of

silicon.

It is widely expected that these historical

trends will continue for at least another 5-

10 years, resulting in Chips that contain

tens of billions of components.

Information age


First Transistor from Bell Labs (1947)


Kilby first IC (1958)


First monolithic integrated circuit

1961 Picture shows a flip-

flop circuit containing

6 devices, produced in

planar technology.

Source:

R. N. Neyce, “Semiconductor

device-and-lead structure”,

U.S.Patent 2,981,877


first microprocessor

1971 Picture shows a four-bit microprocessor Intel 4004.

10 μm technology

3 mm 4 mm

2300 MOS-FETs

108 kHz clock frequency

Source: Intel Corporation


Pentium IV processor

2001 Picture shows a ULSI

chip with 32-bit processor

Intel Pentium 4.

0.18μm CMOS technology

17.5 mm 19 mm

42 000 000 components

1.6 GHz clock freuqncy

Source:

Intel Corporation


Moore’s Law

In 1965, Gordon Moore predicted that the number of transistors that can be integrated on a die would double every 18 to 14 months (i.e., grow exponentially with time).

Amazingly visionary – million transistor/chip barrier was crossed in the 1980’s.

2300 transistors, 1 MHz clock (Intel 4004) - 1971

16 Million transistors (Ultra Sparc III)

42 Million, 2 GHz clock (Intel P4) - 2001

Xilinx currently holds the "world-record" for an FPGA chip containing 6.8 billion transistors

http://en.wikipedia.org/wiki/Xilinx

http://en.wikipedia.org/wiki/FPGA


Moore’s Law in Microprocessors

Transistors on microprocessors double every 2 years

Courtesy, Intel

1,000,000

100,000

10,000

1,000

10

100

1 1975 1980 1985 1990 1995 2000 2005 2010

8086

80286 i386

i486 Pentium®

Pentium® Pro

K 1 Billion

Transistors

Source: Intel

Projected

Pentium® II Pentium® III


Moore’s law scaling


Moore and CMOS Scaling

“CMOS scaling will not stay forever, but, forever can be delayed”

Moore, 2003


Moore’s Law Challenges Defects during the manufacturing

process (a single defect larger than some critical size usually means that the chip will not function correctly)

IC manufacturing requires low defect densities (Clean Rooms)


Clean Rooms

Clean room facility:

Particle free walls, furniture, and accessories must be used

Airflow through 0.3 microns filters


Clean Rooms


Main function of clean rooms is control of particle contamination

Requires control of air flow, water and chemical filtrations,

human protocol

Class N clean room means fewer than N particles (>0.5 µm) in

1 cubic foot of air

Classes types:

Class 10,000

Class 1,000

Class 100

Class 10


Clean Rooms


Class 10,000

Class 1,000

Class 100

Class 10


Electronics Design Flow

Design the circuit using electronic components

Simulate your circuit using Spice

Adjust the circuit till the simulation results are correct

Draw your layout

Simulate your layout (with parasitic) using Spice

Adjust the circuit/layout till the simulation results are correct

Send your design for tape-out

Test your chip If not working Repeat


Model of semiconductor device

Purpose of model:

geometry for layout design

current/voltage for electrical analysis

Used formalism:

mathematical equations

current voltage characteristics

equivalent electric circuit


PSpice models

Model line: Pattern: .MODEL MODNAME D(<parameter list>) Example: .MODEL PNDIODE1 D(IS=1.1E-15)

Model parameters Examples: IS, RS, VJ, EG, XTI, BV, IBV, TT, CJ0,…

Element line: Pattern: Dxxxxxx N+ N- MODNAME <area><off><> Example: D5 15 16 PNDIODE1


First letter of the element

known R – resistor C – capacitor L – inductor K – mutual inductor E – v-controlled v-source F – i-controlled i-source G – v-controlled i-source H – i-controlled v-source I – independent i-source V – independent v-source T – transmission line

semiconductor devices D – diode J – J-FET M – MOS-FET Q – bipolar transistor B – GaAs MES-FET


DC model versus AC model

Every electronic component has dc model and ac model

dc models assume that all the inputs are dc

ac models assume that all the inputs are ac

dc = large signal

ac = small signal

Superposition

CSE 477. VLSI Systems Design - German University in Cairoeee.guc.edu.eg/Courses/Electronics/ELCT503...

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