CRTT084N08N datasheet · BST084N08TN TrenchN-MOSFET80V,6.4mΩ,110A Page3 Ver.O...

BST084N08TNTrench N-MOSFET 80V, 6.4mΩ, 110A

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©Chengdu Blue Silicon Technology Co., Ltd.

Features Product Summary

• Uses BeST advanced Trench technology

• Extremely low on-resistance RDS(on)

• Excellent QgxRDS(on)product(FOM)

• Qualified according to JEDEC criteria

Applications

• Motor control and drive

• Battery management

• UPS

Package Marking and Ordering Information

Part # Marking Package Packing Qty

BST084N08TN BST084N08TN TO-220 Tube 50pcs

Absolute Maximum Ratings(at Tc = 25 °C, unless otherwise specified)

Parameter Symbol Value Unit

Drain-source voltage VDS 80 V

Continuous drain current

TC = 25°C (Silicon limit)TC = 25°C (Package limit)

ID 110124

A

TC = 100°C (Silicon limit) 70

Pulsed drain current (tp limited by Tjmax) ID pulse 440 A

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) EAS 169 mJ

Gate-Source voltage VGS ±25 V

Power dissipation Ptot 172 W

Operating junction and storage temperature Tj , Tstg -55~150 °C

VDS 80V

RDS(on) typ. 6.4mΩ

ID 110A

100% Avalanche Tested

100% DVDS Tested


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Thermal ResistanceParameter Symbol Max Unit

Thermal resistance, junction – case. RthJC 0.73°C/W

Thermal resistance, junction – ambient(min. footprint) RthJA 84

Electrical Characteristic (at Tj = 25 °C, unless otherwise specified)

Parameter SymbolValue

Unit Test Conditionmin. typ. max.

Static Characteristic

Drain-source breakdown voltage BVDSS 80 - - V VGS=0V, ID=250uA

Gate threshold voltage VGS(th) 2.4 3 3.6 V VDS=VGS, ID=250uA

VDS=80V, VGS=0V

Zero gate voltage drain current IDSS - 0.05 1 µA Tj=25°C

- - 100 Tj=125°C

Gate-source leakage current IGSS - 10 100 nA VGS=25V, VDS=0V

VGS=10V, ID=40A,

Drain-source on-state resistance RDS(on) - 6.4 8.4 mΩ Tj=25°C

- 11.4 14 Tj=150°C

Transconductance gfs - 41 - S VDS=5V, ID=40A

Dynamic Characteristic

Input Capacitance Ciss - 6533 -

pFVGS=0V, VDS=40V,

f=1MHzOutput Capacitance Coss - 338 -

Reverse Transfer Capacitance Crss - 165 -

Gate Total Charge QG - 119 -

nCVGS=10V, VDS=40V,ID=40A, f=1MHzGate-Source charge Qgs - 42 -

Gate-Drain charge Qgd - 33 -

Turn-on delay time td(on) - 23 -

ns VGS=10V, VDD=40V,RG_ext=2.7Ω

Rise time tr - 84 -

Turn-off delay time td(off) - 48 -

Fall time tf - 64 -

Gate resistance RG - 0.8 - ΩVGS=0V, VDS=0V,

f=1MHz


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Body Diode Characteristic

Parameter SymbolValue

Unit Test Conditionmin. typ. max.

Body Diode Forward Voltage VSD - 0.9 1.4 V VGS=0V, ISD=40A

Body Diode Reverse RecoveryTime Trr - 38 - ns

IF=40A, dI/dt=100A/µsBody Diode Reverse RecoveryCharge Qrr - 63 - nC


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Typical Performance Characteristics


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Test Circuit & Waveform


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Package Outline: TO-220-3L


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SYMBOL MIN NOM MAXA 4.40 4.50 4.60A1 1.27 1.30 1.33A2 2.30 2.40 2.50b 0.70 - 0.90b1 1.27 - 1.40c 0.45 0.50 0.60D 15.30 15.70 16.10D1 9.10 9.20 9.30D2 13.10 - 13.70E 9.70 9.90 10.20E1 7.80 8.00 8.20e 2.54BSCe1 5.08BSCH1 6.30 6.50 6.70L 12.78 13.08 13.38L1 - - 3.50L2 4.60REF

P 3.55 3.60 3.65Q 2.73 - 2.87θ1 1° 3° 5°

Revision History

Revision Date Subjects (major changes since last revision)

O 2019/1/24 First release

Disclaimer

Unless otherwise specified in the datasheet, the product is designed and qualified as a standard commercial product and isnot intended for use in applications that require extraordinary levels of quality and reliability, such as automotive,aviation/aerospace and life-support devices or systems.

Any and all semiconductor products have certain probability to fail or malfunction, which may result in personal injury, death orproperty damage. Customer are solely responsible for providing adequate safe measures when design their systems.

BeST reserves the right to improve product design, function and reliability without notice.

CRTT084N08N datasheet · BST084N08TN TrenchN-MOSFET80V,6.4mΩ,110A Page3 Ver.O...

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