Cree C2M0280120D Silicon Carbide Power MOSFET · 1 C2M0280120D Rev - C2M0280120D Silicon Carbide...

1 C2M0280120D Rev -

C2M0280120DSilicon Carbide Power MOSFET Z-FET

TM MOSFET

N-Channel Enhancement Mode Features

• High Speed Switching with Low Capacitances• High Blocking Voltage with Low RDS(on)• Easy to Parallel and Simple to Drive• Resistant to Latch-Up• Halogen Free, RoHS Compliant

Benefits

• HigherSystemEfficiency• Increased System Switching Frequency• Reduced Cooling Requirements• Increased System Reliability

Applications

• Lighting • High Voltage DC/DC Converters• Switch Mode Power Supplies• HVAC

Package

TO-247-3

Part Number Package

C2M0280120D TO-247-3

VDS 1200 V

ID @ 25˚C 10 A

RDS(on) 280 mΩ

Maximum Ratings (TC=25˚Cunlessotherwisespecified)

Symbol Parameter Value Unit Test Conditions Note

IDS (DC) Continuous Drain Current10

AVGS = 20 V, TC = 25 °C

Fig. 196 VGS = 20 V, TC = 100 °C

IDS (pulse) Pulsed Drain Current 20 A Pulse width tP limited by Tjmax

TC = 25 °CFig. 22

VGS Gate Source Voltage -10/+25 V

Ptot Power Dissipation 62.5 W TC=25 °C, TJ = 150 °C Fig. 20

TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C

TL Solder Temperature 260 ˚C 1.6 mm (0.063”) from case for 10s

Md Mounting Torque 18.8

Nmlbf-in M3 or 6-32 screw

2 C2M0280120D Rev -

Electrical Characteristics (TC=25˚Cunlessotherwisespecified)

Symbol Parameter Min. Typ. Max. Unit Test Conditions NoteV(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID=50μA

VGS(th) Gate Threshold Voltage2.4 2.8 V VDS = 10 V, ID = 1.25mA

Fig. 111.8 2.1 V VDS = 10 V, ID = 1.25mA,

TJ = 150 °C

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V

IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V

RDS(on) Drain-Source On-State Resistance280 370

mΩVGS = 20 V, ID = 6 A Fig.

4,5,6530 650 VGS = 20 V, ID = 6 A, TJ = 150 °C

gfs Transconductance2.8

SVDS= 20 V, IDS= 6 A

Fig. 72.4 VDS= 20 V, IDS= 6 A, TJ = 150 °C

Ciss Input Capacitance 259

pFVGS = 0 V

VDS = 1000 V

f = 1 MHzVAC = 25 mV

Fig. 17,18Coss Output Capacitance 23

Crss Reverse Transfer Capacitance 3

Eoss Coss Stored Energy 12.5 μJ Fig 16

td(on) Turn-On Delay Time 5.2

ns

VDD = 800 V, VGS = -5/20 VID = 6 A,RG(ext)=2.5Ω,RL=133ΩTiming relative to VDS Per IEC60747-8-4 pg 83

Fig. 27tr Rise Time 7.6

td(off) Turn-Off Delay Time 10.8

tf Fall Time 9.9

EON Turn-On Switching Loss 32μJ

VDS = 800 V, VGS = -5/20 V,ID = 6A, RG(ext) =2.5Ω,L=412μH

Fig. 25EOFF Turn Off Switching Loss 37

RG Internal Gate Resistance 11.4 Ω f = 1 MHz, VAC = 25 mV, ESR of CISS

Built-in SiC Body Diode Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

VSD Diode Forward Voltage4.1 V VGS = - 5 V, ISD = 3 A, TJ = 25 °C

Note 13.7 V VGS = - 5 V, ISD = 3 A, TJ = 150 °C

trr Reverse Recovery time 23.8 ns VGS = - 5 V, ISD = 6 A TJ = 25 °CVR = 800 Vdif/dt = 1000 A/µs

Note 1Qrr Reverse Recovery Charge 70 nC

Irrm Peak Reverse Recovery Current 4.1 A

Note (1): When using SiC Body Diode the maximum recommended VGS = -5V

Thermal Characteristics


RθJC Thermal Resistance from Junction to Case 1.8 2.0°C/W

Fig. 21

RθJC Thermal Resistance from Junction to Ambient 40

Gate Charge Characteristics


Qgs Gate to Source Charge 5.6

nCVDS = 800 V, VGS = -5/20 VID = 6 APer IEC60747-8-4 pg 21

Fig. 12Qgd Gate to Drain Charge 7.6

Qg Gate Charge Total 20.4

3 C2M0280120D Rev -

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150

On R

esist

ance

, RDS

On

(P.U

.)

Junction Temperature, TJ (°C)

Conditions:IDS = 6 AVGS = 20 Vtp < 200 µs

0

2

4

6

8

10

12

14

16

0.0 2.5 5.0 7.5 10.0 12.5

Drai

n-So

urce

Cur

rent

, IDS

(A)

Drain-Source Voltage, VDS (V)

Conditions:TJ = 150 °Ctp < 200 µs

VGS = 20 V

VGS = 10 V

VGS = 18 V

VGS = 16 VVGS = 14 V

VGS = 12 V

0

2

4

6

8

10

12

14

16

0.0 2.5 5.0 7.5 10.0 12.5

Drai

n-So

urce

Cur

rent

, IDS

(A)


Conditions:TJ = -55 °Ctp < 200 µs

VGS = 20 V

VGS = 10 V

VGS = 18 V

VGS = 16 V

VGS = 14 V

VGS = 12 V

0

2

4

6

8

10

12

14

16

0.0 2.5 5.0 7.5 10.0 12.5

Drai

n-So

urce

Cur

rent

, IDS

(A)



VGS = 20 V

VGS = 10 V

VGS = 18 V


VGS = 12 V

Figure 2. Typical Output Characteristics TJ = 25 °C

Typical Performance

Figure 1. Typical Output Characteristics TJ = -55 °C

0

100

200

300

400

500

600

700

800

0 2 4 6 8 10 12 14

On R

esist

ance

, RDS

On

(mOh

ms)

Drain-Source Current, IDS (A)

Conditions:VGS = 20 Vtp < 200 µs

TJ = 150 °C

TJ = -55 °C

TJ = 25 °C

0

100

200

300

400

500

600

700

-50 -25 0 25 50 75 100 125 150

On R

esist

ance

, RDS

On

(mOh

ms)


Conditions:IDS = 6 Atp < 200 µs

VGS = 20 V

VGS = 18 V

VGS = 16 V

VGS = 14 V

Figure 3. Typical Output Characteristics TJ = 150 °C Figure 4. Normalized On-Resistance vs. Temperature

Figure 6. On-Resistance vs. Temperature For Various Gate Voltage

Figure 5. On-Resistance vs. Drain CurrentFor Various Temperatures

4 C2M0280120D Rev -

Typical Performance

0

1

2

3

4

5

6

7

8

9

10

0 2 4 6 8 10 12 14

Drai

n-So

urce

Cur

rent

, IDS

(A)

Gate-Source Voltage, VGS (V)

Conditions:VDS = 20 Vtp < 200 µs

TJ = 150 °C

TJ = -55 °C

TJ = 25 °C

-16

-14

-12

-10

-8

-6

-4

-2

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)

Drain-Source Voltage, VDS (A)

VGS = 0 V

VGS = -2 V

VGS = -5 VCondition:TJ = -55 °Ctp < 200 µs

-16

-14

-12

-10

-8

-6

-4

-2

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)


VGS = 0 V

VGS = -2 V

VGS = -5 V

Condition:TJ = 25 °Ctp < 200 µs

-16

-14

-12

-10

-8

-6

-4

-2

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)


VGS = 0 V

VGS = -2 V

VGS = -5 VCondition:TJ = 150 °Ctp < 200 µs

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-50 -25 0 25 50 75 100 125 150

Thre

shol

d Vo

ltage

, Vth

(V)

Junction Temperature TJ (°C)

ConditonsVDS = 10 VIDS = 1.25 mA

Typ

Min

-5

0

5

10

15

20

25

0 5 10 15 20 25

Gate

-Sou

rce V

olta

ge, V

GS

(V)

Gate Charge, QG (nC)

Conditions:IDS = 6 AIGS = 100 mAVDS = 800 VTJ = 25 °C

Figure 7. Typical Transfer CharacteristicFor Various Temperatures

Figure 8. Typical Body Diode Characteristic TJ = -55 ºC

Figure 9. Typical Body Diode Characteristic TJ = 25 ºC

Figure 10. Typical Body Diode CharacteristicTJ = 150 ºC

Figure 11. Typical and Minimum Threshold Voltage vs. Temperature Figure 12. Typical Gate Charge Characteristic 25 ºC

5 C2M0280120D Rev -

1

10

100

1000

0 50 100 150 200

Capa

cita

nce

(pF)


Ciss

Coss

Conditions:TJ = 25 °CVAC = 25 mVf = 1 MHz

Crss

Typical Performance

-16

-14

-12

-10

-8

-6

-4

-2

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)



VGS = 0 VVGS = 5 V

VGS = 10 V

VGS = 15 V

VGS = 20 V

-16

-14

-12

-10

-8

-6

-4

-2

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)



VGS = 0 VVGS = 5 V

VGS = 10 V

VGS = 15 V

VGS = 20 V

-16

-14

-12

-10

-8

-6

-4

-2

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)



VGS = 0 V VGS = 5 V


VGS = 20 V

0

2

4

6

8

10

12

14

0 200 400 600 800 1000 1200

Stor

ed En

ergy

, EO

SS(µ

J)

Drain to Source Voltage, VDS (V)

1

10

100

1000

0 200 400 600 800 1000

Capa

cita

nce

(pF)


Ciss

Coss


Crss

Figure 13. Typical 3rd Quadrant Characteristic TJ = -55 ºC

Figure 14. Typical 3rd Quadrant Characteristic TJ = 25 ºC

Figure 15. Typical 3rd Quadrant Characteristic TJ = 150 ºC Figure 16. Typical Output Capacitor Stored Energy

Figure 17. Typical Capacitances vs Drain Voltage (0-200 V)


6 C2M0280120D Rev -

0

50

100

150

200

250

300

350

0 2 4 6 8 10 12 14 16 18

Switc

hing

Ener

gy (u

J)

Drain to Source Current, IDS (A)

Conditions:TJ = 25 °CVDD = 800 VRG(ext) = 2.5 ΩVGS = -5/+20 VFWD = C4D02120AL = 412 μH

EOff

EOn

ETotal

Typical Performance

0

2

4

6

8

10

12

-55 -5 45 95 145

Drai

n-So

urce

Con

tinou

s Cur

rent

, IDS

(DC)

(A)

Case Temperature, TC (°C)

Conditions:TJ ≤ 150 °C

0

10

20

30

40

50

60

70

-55 -5 45 95 145

Max

imum

Dis

sipa

ted

Pow

er, P

tot(

W)



1E-3

10E-3

100E-3

1

1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1

Junc

tion

To C

ase

Impe

danc

e, Z t

hJC

(o C/W

)

Time, tp (s)

0.5

0.3

0.1

0.05

0.02

0.01 SinglePulse

0.01

0.10

1.00

10.00

0.1 1 10 100 1000

Drai

n-So

urce

Curr

ent,

I DS

(A)


100 µs

1 ms

10 µs

Conditions:TC = 25 °CD = 0, Parameter: tp

100 ms

Limited by RDS On

0

50

100

150

200

250

0 2 4 6 8 10 12 14 16 18

Switc

hing

Ener

gy (u

J)



EOff

EOn

ETotal

Figure 20. Power Dissipation Derating CurveFigure 19. Continuous IDS Current derating curve

Figure 21. Typical Transient Thermal Impedance(Junction - Case) with Duty Cycle Figure 22. Safe Operating Area

Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V)


7 C2M0280120D Rev -

Typical Performance

0

20

40

60

80

100

120

140

0 5 10 15 20 25 30

Switc

hing

Loss

(uJ)

External Gate Resistor RG(ext) (Ohms)

EOff

EOn

ETotal

Conditions:TJ = 25 °CVDD = 800 VIDS = 6 AVGS = -5/+20 VFWD = C4D02120AL = 412 μH

0

20

40

60

80

100

120

-50 -25 0 25 50 75 100 125 150

Swith

cing

Loss

(uJ)


Conditions:IDS = 6 AVDD = 800 VRG(ext) = 2.5 ΩVGS = -5/+20 VFWD = C4D02120AL = 412 µH

EOff

EOn

ETotal

0

2

4

6

8

10

12

14

16

18

20

0 5 10 15 20 25

Tim

e (n

s)

External Gate Resistor, RG(ext) (Ohms)

Conditions:TJ = 25 °CVDD = 800 VRL = 133 ΩVGS = -5/+20 V

td (off)

td (on)

tf

tr

Figure 25. Clamped Inductive Switching Energy vs. RG(ext)Figure 26. Clamped Inductive Switching Energy vs.

Junction Temperature

Figure 27. Resistive Switching Times vs. External Gate Resistor Figure 28. Resistive Switching Time Description

8 C2M0280120D Rev -

Test Circuit Schematic

Figure 30. Clamped Inductive Switching Waveform Test Circuit

ESD Test Total Devices Sampled Resulting Classification

ESD-HBM All Devices Passed 1000V 2 (>2000V)

ESD-MM All Devices Passed 400V C (>400V)

ESD-CDM All Devices Passed 1000V IV (>1000V)

ESD Ratings

CDC=42.3 uF

L=412 uH

Q1

D1

C4D02120A2A, 1200V

SiC Schottky

VDC

D.U.TC2M0280120D

CDC=42.3 uF

L=412 uH

Q2

VDC

D.U.TC2M0280120D

Q1

VGS= - 5V

C2M0280120D

RG

RG

Figure 31. Body Diode Recovery Test Circuit

9 C2M0280120D Rev -

Package Dimensions

Package TO-247-3

Recommended Solder Pad Layout

TO-247-3

POSInches Millimeters

Min Max Min Max

A .190 .205 4.83 5.21

A1 .090 .100 2.29 2.54

A2 .075 .085 1.91 2.16

b .042 .052 1.07 1.33

b1 .075 .095 1.91 2.41

b2 .075 .085 1.91 2.16

b3 .113 .133 2.87 3.38

b4 .113 .123 2.87 3.13

c .022 .027 0.55 0.68

D .819 .831 20.80 21.10

D1 .640 .695 16.25 17.65

D2 .037 .049 0.95 1.25

E .620 .635 15.75 16.13

E1 .516 .557 13.10 14.15

E2 .145 .201 3.68 5.10

E3 .039 .075 1.00 1.90

E4 .487 .529 12.38 13.43

e .214 BSC 5.44 BSC

N 3 3

L .780 .800 19.81 20.32

L1 .161 .173 4.10 4.40

ØP .138 .144 3.51 3.65

Q .216 .236 5.49 6.00

S .238 .248 6.04 6.30

Pinout Information:

• Pin 1 = Gate• Pin 2, 4 = Drain • Pin 3 = Source

Part Number Package Marking

C2M0280120D TO-247-3 C2M0280120

1010 C2M0280120D Rev -

Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

Cree, Inc.4600 Silicon Drive

Durham, NC 27703USA Tel: +1.919.313.5300

Fax: +1.919.313.5451www.cree.com/power

• RoHSCompliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.

• REAChCompliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiacdefibrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrolsystems,airtrafficcontrolsystems.

Notes

1 C2M0040120D Rev -

C2M0040120DSilicon Carbide Power MOSFET Z-FET

TM MOSFET

N-Channel Enhancement Mode Features

• High Speed Switching with Low Capacitances• High Blocking Voltage with Low RDS(on)• Easy to Parallel and Simple to Drive• Resistant to Latch-Up• Halogen Free, RoHS Compliant

Benefits

• HigherSystemEfficiency• Increased System Switching Frequency• Reduced Cooling Requirements• Increased System Reliability

Applications

• Solar Inverters• Switch Mode Power Supplies• High Voltage DC/DC converters• Motor Drive

Package

TO-247-3

Part Number Package

C2M0040120D TO-247-3

VDS 1200 V

ID @ 25˚C 60 A

RDS(on) 40 mΩ

Maximum Ratings (TC=25˚Cunlessotherwisespecified)

Symbol Parameter Value Unit Test Conditions Note

IDS (DC) Continuous Drain Current60

AVGS = 20 V, TC = 25 °C

Fig. 1940 VGS = 20 V, TC = 100 °C

IDS (pulse) Pulsed Drain Current 160 A Pulse width tP limited by Tjmax

TC = 25 °CFig. 22

VGS Gate Source Voltage -10/+25 V

Ptot Power Dissipation 330 W TC=25 °C, TJ = 150 °C Fig. 20

TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C

TL Solder Temperature 260 ˚C 1.6 mm (0.063”) from case for 10s

Md Mounting Torque 18.8

Nmlbf-in M3 or 6-32 screw

2 C2M0040120D Rev -

Electrical Characteristics (TC=25˚Cunlessotherwisespecified)

Symbol Parameter Min. Typ. Max. Unit Test Conditions NoteV(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID=50μA

VGS(th) Gate Threshold Voltage2.4 2.8 V VDS = 10 V, ID = 10mA

Fig. 111.8 2.0 V VDS = 10 V, ID = 10mA,TJ = 150 °C

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V

IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V

RDS(on) Drain-Source On-State Resistance40 52

mΩVGS = 20 V, ID = 40 A Fig.

4,5,684 100 VGS = 20 V, ID = 40 A, TJ = 150 °C

gfs Transconductance15.1

SVDS= 20 V, IDS= 40 A

Fig. 713.2 VDS= 20 V, IDS= 40 A, TJ = 150 °C

Ciss Input Capacitance 1893

pFVGS = 0 V

VDS = 1000 V

f = 1 MHzVAC = 25 mV

Fig. 17,18Coss Output Capacitance 150

Crss Reverse Transfer Capacitance 10

Eoss Coss Stored Energy 82 μJ Fig 16

td(on) Turn-On Delay Time 14.8

ns

VDD = 800 V, VGS = -5/20 VID = 40 A,RG(ext)=2.5Ω,RL=16ΩTiming relative to VDS Per IEC60747-8-4 pg 83

Fig. 27tr Rise Time 52

td(off) Turn-Off Delay Time 26.4

tf Fall Time 34.4

EON Turn-On Switching Loss 1.0mJ

VDS = 800 V, VGS = -5/20 V,ID = 40A, RG(ext) =2.5Ω,L=80μH

Fig. 25EOFF Turn Off Switching Loss 0.4

RG Internal Gate Resistance 1.8 Ω f = 1 MHz, VAC = 25 mV, ESR of CISS

Built-in SiC Body Diode Characteristics


VSD Diode Forward Voltage3.6 V VGS = - 5 V, ISD = 20 A, TJ = 25 °C

Note 13.3 V VGS = - 5 V, ISD = 20 A, TJ = 150 °C

trr Reverse Recover time 54 ns VGS = - 5 V, ISD = 40 A TJ = 25 °CVR = 800 Vdif/dt = 1000 A/µs

Note 1Qrr Reverse Recovery Charge 283 nC

Irrm Peak Reverse Recovery Current 15 A

Note (1): When using SiC Body Diode the maximum recommended VGS = -5V

Thermal Characteristics


RθJC Thermal Resistance from Junction to Case 0.34 0.38°C/W

Fig. 21

RθJC Thermal Resistance from Junction to Ambient 40

Gate Charge Characteristics


Qgs Gate to Source Charge 28

nCVDS = 800 V, VGS = -5/20 VID = 40 APer IEC60747-8-4 pg 21

Fig. 12Qgd Gate to Drain Charge 37

Qg Gate Charge Total 115

3 C2M0040120D Rev -

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150

On R

esist

ance

, RDS

On

(P.U

.)


Conditions:IDS = 40 AVGS = 20 Vtp < 200 µs

0

20

40

60

80

100

0.0 2.5 5.0 7.5 10.0

Drai

n-So

urce

Cur

rent

, IDS

(A)



VGS = 20 V

VGS = 10 V

VGS = 18 V


VGS = 12 V

0

20

40

60

80

100

0.0 2.5 5.0 7.5 10.0

Drai

n-So

urce

Cur

rent

, IDS

(A)



VGS = 20 V

VGS = 10 V


VGS = 14 V

VGS = 12 V

0

20

40

60

80

100

0.0 2.5 5.0 7.5 10.0

Drai

n-So

urce

Cur

rent

, IDS

(A)



VGS = 20 V

VGS = 10 V

VGS = 18 V

VGS = 16 V VGS = 14 V

VGS = 12 V

Figure 2. Typical Output Characteristics TJ = 25 °C

Typical Performance

Figure 1. Typical Output Characteristics TJ = -55 °C

0

20

40

60

80

100

120

140

0 20 40 60 80 100

On R

esist

ance

, RDS

On

(mOh

ms)

Drain-Source Current, IDS (A)

Conditions:VGS = 20 Vtp < 200 µs

TJ = 150 °C

TJ = -55 °CTJ = 25 °C

0

20

40

60

80

100

120

140

-50 -25 0 25 50 75 100 125 150

On R

esist

ance

, RDS

On

(mOh

ms)


Conditions:IDS = 40 Atp < 200 µs

VGS = 20 V

VGS = 18 V

VGS = 16 V

VGS = 14 V

Figure 3. Typical Output Characteristics TJ = 150 °C Figure 4. Normalized On-Resistance vs. Temperature

Figure 6. On-Resistance vs. Temperature For Various Gate Voltage

Figure 5. On-Resistance vs. Drain CurrentFor Various Temperatures

4 C2M0040120D Rev -

Typical Performance

0

10

20

30

40

50

60

0 2 4 6 8 10 12 14

Drai

n-So

urce

Cur

rent

, IDS

(A)

Gate-Source Voltage, VGS (V)

Conditions:VDS = 20 Vtp < 200 µs

TJ = 150 °C

TJ = -55 °C

TJ = 25 °C

-100

-80

-60

-40

-20

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)


VGS = 0 V

VGS = -2 V

VGS = -5 VCondition:TJ = -55 °Ctp < 200 µs

-100

-80

-60

-40

-20

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)


VGS = 0 V

VGS = -2 V

VGS = -5 V

Condition:TJ = 25 °Ctp < 200 µs

-100

-80

-60

-40

-20

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)


VGS = 0 V

VGS = -2 V

VGS = -5 VCondition:TJ = 150 °Ctp < 200 µs

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-50 -25 0 25 50 75 100 125 150

Thre

shol

d Vo

ltage

, Vth

(V)

Junction Temperature TJ (°C)

ConditionsVDS = 10 VIDS = 0.5 mA

ConditionsVDS = 10 VIDS = 10 mA

Typ

Min

-5

0

5

10

15

20

25

0 20 40 60 80 100 120 140

Gate

-Sou

rce V

olta

ge, V

GS

(V)

Gate Charge, QG (nC)

Conditions:IDS = 40 AIGS = 100 mAVDS = 800 VTJ = 25 °C

Figure 7. Typical Transfer CharacteristicFor Various Temperatures

Figure 8. Typical Body Diode Characteristic TJ = -55 ºC

Figure 9. Typical Body Diode Characteristic TJ = 25 ºC

Figure 10. Typical Body Diode CharacteristicTJ = 150 ºC

Figure 11. Typical and Minimum Threshold Voltage vs. Temperature Figure 12. Typical Gate Charge Characteristic 25 ºC

5 C2M0040120D Rev -

1

10

100

1000

10000

0 50 100 150 200

Capa

cita

nce

(pF)


Ciss

Coss


Crss

Typical Performance

-100

-80

-60

-40

-20

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)



VGS = 0 VVGS = 5 V

VGS = 10 V

VGS = 15 V

VGS = 20 V

-100

-80

-60

-40

-20

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)



VGS = 0 VVGS = 5 V

VGS = 10 V

VGS = 15 V

VGS = 20 V

-100

-80

-60

-40

-20

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)



VGS = 0 V VGS = 5 VVGS = 10 V

VGS = 15 V

VGS = 20 V

0

20

40

60

80

100

0 200 400 600 800 1000 1200

Stor

ed En

ergy

, EO

SS(µ

J)

Drain to Source Voltage, VDS (V)

1

10

100

1000

10000

0 200 400 600 800 1000

Capa

cita

nce

(pF)


Ciss

Coss


Crss

Figure 13. Typical 3rd Quadrant Characteristic TJ = -55 ºC

Figure 14. Typical 3rd Quadrant Characteristic TJ = 25 ºC

Figure 15. Typical 3rd Quadrant Characteristic TJ = 150 ºC Figure 16. Typical Output Capacitor Stored Energy



6 C2M0040120D Rev -

0

1

2

3

4

5

6

0 10 20 30 40 50 60 70 80 90

Switc

hing

Ener

gy (m

J)



EOff

EOn

ETotal

Typical Performance

0

10

20

30

40

50

60

70

-55 -5 45 95 145

Drai

n-So

urce

Con

tinou

s Cur

rent

, IDS

(DC)

(A)



0

50

100

150

200

250

300

350

-55 -5 45 95 145

Max

imum

Dis

sipa

ted

Pow

er, P

tot(

W)



100E-6

1E-3

10E-3

100E-3

1

1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1

Junc

tion

To C

ase

Impe

danc

e, Z t

hJC

(o C/W

)

Time, tp (s)

0.5

0.3

0.1

0.05

0.02

0.01 SinglePulse

0.01

0.10

1.00

10.00

100.00

0.1 1 10 100 1000

Drai

n-So

urce

Curr

ent,

I DS

(A)


100 µs

1 ms

10 µs

Conditions:TC = 25 °CD = 0, Parameter: tp

100 ms

Limited by RDS On

0

0.5

1

1.5

2

2.5

3

3.5

4

0 10 20 30 40 50 60 70 80 90

Switc

hing

Ener

gy (m

J)



EOff

EOn

ETotal

Figure 20. Power Dissipation Derating CurveFigure 19. Continuous IDS Current derating curve

Figure 21. Typical Transient Thermal Impedance(Junction - Case) with Duty Cycle Figure 22. Safe Operating Area



7 C2M0040120D Rev -

Typical Performance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 5 10 15 20 25 30

Switc

hing

Loss

(mJ)

External Gate Resistor RG(ext) (Ohms)

EOff

EOn

ETotal

Conditions:TJ = 25 °CVDD = 800 VIDS = 40 AVGS = -5/+20 VFWD = C4D20120AL = 80 μH

0.0

0.5

1.0

1.5

2.0

2.5

-50 -25 0 25 50 75 100 125 150

Swith

cing

Loss

(mJ)


Conditions:IDS = 40 AVDD = 800 VRG(ext) = 2.5 ΩVGS = -5/+20 VFWD = C4D20120AL = 80 µH

EOff

EOn

ETotal

0

10

20

30

40

50

60

70

80

90

100

0 4 8 12 16 20

Tim

e (n

s)

External Gate Resistor, RG(ext) (Ohms)

Conditions:TJ = 25 °CVDD = 800 VRL = 20 ΩVGS = -5/+20 V

td (off)

td (on)

tf

tr

Figure 25. Clamped Inductive Switching Energy vs. RG(ext)Figure 26. Clamped Inductive Switching Energy vs.

Junction Temperature

Figure 27. Resistive Switching Times vs. External Gate Resistor (VDD = 800V, ID = 40A) Figure 28. Resistive Switching Time Description

8 C2M0040120D Rev -

Test Circuit Schematic

Figure 30. Clamped Inductive Switching Waveform Test Circuit

ESD Test Total Devices Sampled Resulting Classification

ESD-HBM All Devices Passed 1000V 2 (>2000V)

ESD-MM All Devices Passed 400V C (>400V)

ESD-CDM All Devices Passed 1000V IV (>1000V)

ESD Ratings

CDC=42.3 uF

L=80 uH

Q1

D1

C4D20120A20A, 1200VSiC Schottky

VDC

D.U.TC2M0040120D

CDC=42.3 uF

L=80 uH

Q2

VDC

D.U.TC2M0040120D

Q1

VGS= - 5V

C2M0040120D

Figure 31. Body Diode Recovery Test Circuit

9 C2M0040120D Rev -

Package Dimensions

Package TO-247-3

Recommended Solder Pad Layout

TO-247-3

POSInches Millimeters

Min Max Min Max

A .190 .205 4.83 5.21

A1 .090 .100 2.29 2.54

A2 .075 .085 1.91 2.16

b .042 .052 1.07 1.33

b1 .075 .095 1.91 2.41

b2 .075 .085 1.91 2.16

b3 .113 .133 2.87 3.38

b4 .113 .123 2.87 3.13

c .022 .027 0.55 0.68

D .819 .831 20.80 21.10

D1 .640 .695 16.25 17.65

D2 .037 .049 0.95 1.25

E .620 .635 15.75 16.13

E1 .516 .557 13.10 14.15

E2 .145 .201 3.68 5.10

E3 .039 .075 1.00 1.90

E4 .487 .529 12.38 13.43

e .214 BSC 5.44 BSC

N 3 3

L .780 .800 19.81 20.32

L1 .161 .173 4.10 4.40

ØP .138 .144 3.51 3.65

Q .216 .236 5.49 6.00

S .238 .248 6.04 6.30

Pinout Information:

• Pin 1 = Gate• Pin 2, 4 = Drain • Pin 3 = Source

Part Number Package Marking

C2M0040120D TO-247-3 C2M0040120

1010 C2M0040120D Rev -

Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

Cree, Inc.4600 Silicon Drive

Durham, NC 27703USA Tel: +1.919.313.5300

Fax: +1.919.313.5451www.cree.com/power

• RoHSCompliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.

• REAChCompliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiacdefibrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrolsystems,airtrafficcontrolsystems.

Notes

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