Connectivity and Sensing · QN9020 from NXP Semiconductors is a complete system-on-chip for...

Component Focus: Pages 3-9 PRD15/PRD25 DC-DC converters from CUI Incfor 15W/25W loads achieve efficiency up to 91%

Design Notes: Pages 10-12 Design considerations when using Intersil’s high-speed RS-485 transceivers

Circuit Centre: Pages 13-17 The latest and best components for ECGmonitoring applications

Application Spotlight: Pages 18-25 QN9020 from NXP Semiconductors is a completesystem-on-chip for Bluetooth® Smart devices

Technical View: Pages 26-27 How MOSFETs are encroaching on the IGBT’shigh-voltage, high-power territory

Application Spotlight onConnectivity and Sensing

Developing for an ECG?Turn to page 13 now

to see the Circuit Centre feature!

Integrated wireless power receiver IC supports Qi and PMA standards

The STWLC03 is a wireless powerreceiver IC which complies with thepopular Qi standard for wirelesscharging equipment backed by theWireless Power Consortium (WPC),and also with the standard technologyof the Power Matters Alliance (PMA).

ST’s STWLC03: Includes embedded 32-bit microcontroller

STMICROELECTRONICS

The STWLC03 consists of a wireless powerreceiver, a programmable 1MHz buck powerconverter with a basic lithium-polymer orlithium-ion battery charger function, anembedded 32-bit microcontroller and a 2kbytenon-volatile memory. The on-board MCU allowsfor end-product customisation and support fordifferent standards.

The power converter features a synchronousrectifier, which provides for efficiency up to92%. Offering a configurable soft-start function,

its input-current and input-voltage regulationloops are optimised for operation in a wirelesscharging environment.

If wireless power is not available, the devicecan be supplied by an external supply such asa USB port. It can connect this supply to theoutput voltage pin through an external switch. The embedded microcontroller communicateswith the host platform through an I2C interface.The device implements frequency detection,and the driver for the external switch.

APPLICATIONS• Wireless chargers

FEATURES• Up to 7.5W output power • 10-bit, 8-channel ADC• Four configurable GPIOs • Integrated 5V LDO for auxiliary features • Transmitter presence detection • Thermal protection

SECURITYAUTOMOTIVEMEDICALLIGHTINGINDUSTRIALENERGY CONSUMER TELECOMMS

For samples or pricing [email protected]:

2 EMAIL [email protected] FOR SAMPLES AND DATASHEETS

S T A R P R O D U C T

Integrated NFC controller IC providescomplete suite of protocol software

I have just completed a Europe-wideseries of seminars for customers ofFuture Electronics, discussing thetechniques and technologies neededto implement new Internet of Things(IoT) designs.

NXP SEMICONDUCTORS

F T M T E C H N O L O G Y W A T C H

Future Electronics signs globalagreement with former NXP RFpower businessAmpleon, a new company formed at theend of 2015 to take over the RF powerbusiness of NXP Semiconductors, hasannounced a franchise agreement whichentitles Future Electronics to sell any of itsLDMOS and GaN RF power productsworldwide.

Ampleon’s products are widely used intelecoms and broadcasting equipment.Ampleon is also a founding member of theRF Energy Alliance, an ecosystemsupporting the use of solid-state RF energyas a highly efficient and controllable sourceof heat and power.

Pericom and Saronix productsin Future Electronics stableafter Diodes dealThe complete portfolio of Pericom andSaronix products is now available to buyworldwide from Future Electronics followingthe acquisition of Pericom by DiodesIncorporated. Future Electronics was alreadyone of Diodes’ biggest franchiseddistributors.

Pericom products include ICs withprotocol-specific functionality for high-speedstandards, including PCIe-to-PCI/UARTbridges, PCIe Gen 1 and 2 packet switches,and I2C/SPI and UART video decoders.

In addition, Pericom’s ReDriver signal-conditioning products correct for signal-levelattenuation and noise in high-speed datacommunication technologies such as PCIe1.0/2.0/3.0, SATA 2.0/3.0. USB3.0/3.1 and10Gigabit Ethernet.

Murata introduces world’ssmallest high-frequency inductorsMurata is to start mass production in August2016 of the LQP01HQ series of high-frequency inductors, the world’s smallest at0.25mm × 0.125mm, classed as the008004 size.

The LQP01HQ series occupies half themounting area of the smallest previousproduct, which is in the 01005 size, andoffers the same Q characteristics as the01005-size LQP02TN series.

©Copyright 2016 Future Electronics Ltd. All trademarks contained herein are theproperty of their respective owners. Applications for product samples, badgeboards, demonstration boards, Future Electronics’ boards and other advertisedmaterials from Future Electronics are offered subject to qualification. Images ofproduct packages throughout this publication are for illustration purposes and notnecessarily an exact representation of the advertised part.

N E W S I N B R I E F

For more information [email protected]: Amar Abid-Ali BEng, MSc

Vertical Segment Manager (EMEA)Future Connectivity Solutions

The seminars have been as enjoyable andrewarding for me as, I hope, they were for ourcustomers. I have learned an enormous amountabout the challenges and opportunities facingOEMs as they work to adapt existing,unconnected products for a world of pervasiveand cheap internet connectivity.

What has become clear from the 20 seminars,which were hosted by Future Electronics’specialist Future Connectivity Solutions divisionin partnership with our suppliers, is that OEMshave now moved into the implementationphase of the IoT revolution. Our industry hasspent the past three years talking about theIoT. Finally the focus has shifted to from talkingto making.

This is driven by three trends. The first is ageneral reduction in the cost of IoTimplementation. Semiconductor technologyenables products to continually become smaller,faster and more power-efficient, so OEMsbenefit from the lower cost of key componentssuch as microcontrollers and RF transceivers.But improvements in energy efficiency alsoenable, for instance, the use of smaller, cheaperbatteries, sensors and thermal managementcomponents. At a system level, therefore, itcosts less to build an IoT device than it didthree years ago.

The second trend is the maturing of thecloud services market. For the vision of the IoTto be realised, OEMs need a way to process,analyse and display to users the streams ofdata generated by end nodes such as sensors.Where once OEMs’ choice was limited to thegeneral cloud offering from giant suppliers suchas Amazon Web Services, now the market isproviding much more useful application- ormarket-specific cloud services. The softwareplatform needed by dairy farmers, for instance,

From talk to action: the threefactors driving the IoT into itsimplementation phase

NXP Semiconductors’ new PN7150 is theideal solution for rapidly integrating NFCtechnology in any application, especiallythose running an operating system suchas Linux® or Android™.

For details see the Board of the Month, on page 25Orderable Part Numbers: OM5578/PN7150ARD,OM5578/PN7150RPI, OM5578/PN7150BBB

FREEBOARDS

Apply now at my-boardclub.comFast-track board request code: FTM67A

3VISIT THE ONLINE FTM MAGAZINE AT: WWW.MY-FTM.COM

APPLICATIONS• TVs, set-top boxes, Blu-ray decoders• Audio devices• Home-automation equipment• Home gateways and wireless routers• Home appliances• Wearable devices• Personal healthcare/fitness equipment• Printers• IP phones

FEATURES• Includes NXP ISO/IEC 14443-A,

Innovatron ISO/IEC 14443-B and NXPMIFARE crypto1 intellectual-propertylicensing rights

• Highly integrated demodulator and decoder• Integrated RF level detector • RF protocols supported

• NFCIP-1, NFCIP-2 • ISO/IEC 14443A, ISO/IEC 14443B PICC mode via host

interface • ISO/IEC 14443A, ISO/IEC 14443B PCD designed

according to NFC Forum digital protocol T4T platformand ISO-DEP

• FeliCa PCD mode • MIFARE PCD encryption mechanism (MIFARE 1K/4K) • NFC Forum tag 1 to 4 (MIFARE Ultralight, Jewel, Open

FeliCa tag, DESFire) • ISO/IEC 15693/ICODE VCD mode



The PN7150 includes a new RF contactlessfront-end which supports multiple transmissionmodes as specified by the NFCIP-1 andNFCIP-2, ISO/IEC 14443, ISO/IEC 15693,MIFARE and FeliCa standards.

Offering higher sensitivity than NXP’s previousNFC front-end, it can also implement activeload modulation to provide strong coupling andadequate range when operating through asmall antenna.

The PN7150’s integrated firmware makes iteasy to perform NFC system validation, as allthe NFC real-time constraints, protocols anddevice-discovery operations are handledinternally. With only a few NCI commands, thehost software can configure the PN7150 tonotify that it has detected a card or peer and tostart communicating with them.

The controller, which has a built-in ARM®

Cortex®-M0 processor core, is supplied with acomplete suite of NFC protocol software,providing for compliance with the fullspecifications of the industry’s NFC Forumstandards.

Compared to 13.56MHz NFC implementationswhich use discrete components, the PN7150also helps designers to reduce system size andbill-of-materials cost, since it provides:• Direct connection to the main host or

microcontroller via a physical I2C bus interfaceand NFC Controller Interface (NCI 1.0)protocol

• Ultra-low power consumption in polling-loopmode

• Highly efficient integrated power-management unitsupporting a directsupply from a battery

STARPRODUCT

Murata’s MAGICSTRAP®: page 23PARTNERWORKINGis totally different from that required by streetlighting operators.

The availability of cloud services optimised forspecific applications makes IoT implementationmuch more attractive for OEMs.

And the third trend is the growth ofdevelopment ecosystems into which OEMscan tap. Our ‘SWSN’ seminar series was aclear demonstration of the multi-disciplinarynature of IoT device development. We coveredthe topics of Security, Wireless connectivity,Sensors and Node power (hence SWSN): Ilearned that many OEMs feel confident in theirability to design-in one or perhaps two of thesedomains, but very few feel confident in all four.So the development of IoT devices requiresOEMs to draw on the services of third partiesthat have expertise in the domains that theydo not.

And this is why Future Connectivity Solutionsis an ideal partner for any OEM implementingan IoT design today. Through our relationshipsand partnerships with every type of componentand module vendor, with design houses andconsultants, with electronics manufacturingservices companies and with cloud serviceproviders, we can help customers to commissiona complete ecosystem to enable them to getto market quickly and with a minimum of risk.

For those who want to be makers ratherthan talkers, this promises to be a highlyvaluable proposition.

If you would like to know more about theSWSN theme, request the seminar informationpackage from Future Connectivity Solutions bye-mailing:[email protected]

4 5VISIT THE ONLINE FTM MAGAZINE AT: WWW.MY-FTM.COM

C O M P O N E N T F O C U S

FOLLOW US NOW – SEARCH FTM BOARD CLUB ON


Feature-rich MCUs based on ARM Cortex-M4core offer multiple low-power modes

The feature-rich STM32L433 series ofMCUs from STMicroelectronicsprovides a wide variety of analogueperipherals and interfaces whileoffering energy-saving features forreducing system power consumption.

STMICROELECTRONICS

These low-power MCUs are based on thehigh-performance ARM® Cortex®-M4 32-bitprocessor core operating at a frequency of upto 80MHz. The core features a Floating-PointUnit which supports all ARM single-precisiondata-processing instructions and data types.

The analogue peripherals inside theSTM32L433 include a fast 12-bit ADC runningat 5Msamples/s, two comparators, oneoperational amplifier, two DAC channels andan internal voltage-reference buffer. In addition,up to 21 capacitive-sensing channels areavailable. The devices also include an 8x40 or4x44 LCD driver, with internal step-up converter.

The STM32L433 MCUs implement variouspower-saving modes for reduced energyconsumption. In shut-down mode with five

New MOSFETs give more voltage headroomfor soft-switching power circuits

Vishay Intertechnology has expanded its portfolio of N-channel power MOSFETs,introducing the 650V EF series devices to provide greater voltage headroom whencompared to the existing 600V E series MOSFETs.

VISHAY

Benefitting from the super-junction MOSFETtechnology on which the E series MOSFETs arebased, the 650V EF devices offer a ten timeslower reverse-recovery charge than standardMOSFETs. This enables them to regain theability to block the full breakdown voltage morequickly, helping to avoid failure from shoot-through and thermal over-stress.

The new EF MOSFETs, which include a fastbody diode, may be used in advanced power-

circuit designs: they are particularly well suitedto Zero-Voltage Switching (ZVS) and soft-switching topologies such as phase-shiftedbridges and LLC converter half-bridges.

Their ultra-low on-resistance and gatecharge result in extremely low conduction andswitching losses, helping users to save energyin high-power, high-performance switch-modeapplications.

wake-up pins, the device draws just 8nA. Thisrises to 28nA in stand-by mode with fivewake-up pins, and 280nA with the real-timeclock running.

The MCU incorporates several protectionmechanisms for its embedded Flash memoryand SRAM: read-out protection, writeprotection, proprietary code read-outprotection and a firewall.

The STM32L433 is available in versions with48, 64 or 100 pins, with 128kbytes or256kbytes of Flash, and in four differentpackage styles.

CUI open-frame DC-DC converters: Available in through-hole and surface-mount versions

Miniature isolated 15W and 25W DC-DC convertersoffer high efficiency

CUI Inc has added two open-frameisolated DC-DC converter families toits portfolio of power-converterproducts.

CUI INC

The PRD15 converters produce an output of15W, and the output of the PRD25 convertersis 25W. Featuring high typical efficiency up to91%, these compact modules measure just27.9mm x 24.4mm x 8.1mm – a board footprintof just one square inch.

The PRD15 series features a choice of 4:1input-voltage ranges, either 9V to 36V DC or 18to 75V DC, while the PRD25 series provides a2:1 input-voltage range of 36V-75V DC. ThePRD15 series is available with single regulatedoutputs of 3.3V, 5V, 12V or 15V DC, while thePRD25 offers outputs of 3.3V, 5V or 12V DC.

Both series are available in through-hole andsurface-mount versions. The converters’industry-standard pin-outs make them idealreplacements for larger 1” x 2” modules. Inaddition, the series’ high efficiency andoperating-temperature range of -40°C to 85°Cmake them suitable for convection-cooledequipment.

Over-voltage, over-current, under-voltage,over-temperature and short-circuit protectionsare included.

APPLICATIONS• Industrial equipment• Consumer devices• Motor control

FEATURES• 273.55 Coremark® benchmark• Multiple timers including a 16-bit timer

dedicated to motor control• Up to 83 fast I/Os, most 5V-tolerant • 64kbytes of SRAM • Quad SPI memory interface• 15 communication interfaces including

USB2.0 and CAN 2.0B



APPLICATIONS• Data communications equipment• Telecoms communication equipment• Remote sensor systems • Portable electronics devices

FEATURES• Fast transient response• Very low ripple and noise• Remote on/off control• Output trim• UL/cUL safety approvals



Arduino™ connectivity support and ST Morpho headersmake it easy to expand the functionality of the STM32Nucleo open-development platform with a wide choice ofspecialised shields. The board is supplied with thecomprehensive STM32 software library together withvarious packaged software examples and direct accessto mbed online resources. Orderable Part Number: NUCLEO-L476RG

FREEBOARDS


Part NumberMaximum

On-resistance(mΩ) at 10V

Gate Charge(nC) at 10V

Drain Current (A) at 25°C

Reverse-recoveryCharge (µC)

at 25°CPackage

SiHA21N65EF 180 71 21 1.2 Thin-lead TO-220 FullPAKSiHB21N65EF 180 71 21 1.2 D2PAK (TO-263)SiHG21N65EF 180 71 21 1.2 TO-247ACSiHH21N65EF 157 68 21 0.9 PowerPAK 8x8SiHP21N65EF 180 71 21 1.2 TO-220ABSiHG28N65EF 102 97 28 1.1 TO-247ACSiHP28N65EF 102 97 28 1.1 TO-220ABSiHG33N65EF 95 114 33 1.18 TO-247AC

For more information [email protected]:


APPLICATIONS• Solar inverters• Server and telecoms power systems• Switch-mode power supplies• Welding equipment• Uninterruptible power supplies • Battery chargers• External electric-vehicle charging stations• Lighting

FEATURES• 650V maximum drain-to-source voltage• 100% UIS tested to withstand high energy

pulses in the avalanche and commutationmodes

• Continuous maximum drain currents atcase temperature of 100°C: 13A to 20A

• Operating junction-temperature range: -55°C to 150°C






Op amps offer very high output stability over timeand temperature

Buffer/line drivers have eight channels

The NCS333 and NCS325 from ONSemiconductor are precisionoperational amplifiers with a very lowmaximum input-offset voltage of 10µVat ambient temperature, enabling themto achieve high output accuracy. Theyalso feature near-zero drift over timeand temperature.

ON SEMICONDUCTOR

When used in motor-control feedback andpower-supply control loops, the NCS325 andNCS333 op amp devices provide for very highaccuracy, thereby helping designers to achievehigher system efficiency. The devices arecomplemented by the NCV333 AEC-Q100qualified op amp offering similar functionalperformance for use in automotiveapplications.

Featuring a typical 30nV/°C of offsettemperature drift, these op amps are very wellsuited to low-side current sensing and voltage-differential measurement in front-end sensorfunctions. The very low drift and offset valuesensure that their outputs remain stable over a

The NCS333 and NCS325 offer anoutstanding common-mode rejection ratiowithout the cross-over associated withtraditional complementary input stages. Thisdesign results in superior performance whendriving ADCs, avoiding degradation of theirdifferential linearity.

25V MOSFETs offer high efficiency and lowleakage currents

NXP Semiconductors’ PSMN0R7-25YLDis a 25V N-channel logic-level MOSFETwhich benefits from NXP’s NextPowerS3Technology.

NXP SEMICONDUCTORS

The NextPowerS3 portfolio uses NXP'sSchottkyPlus technology to provide the highefficiency and low spiking performance usuallyassociated with MOSFETS that have anintegrated Schottky or Schottky-like diode, butwithout the problematic high leakage currentassociated with Schottky diodes.

This makes NextPowerS3 devicesparticularly well suited to applications requiringhigh efficiency at high switching frequencies.

In the case of the PSMN0R7-25YLD, leakagecurrent is <1µA at 25°C. It has a maximumdrain current rating of 300A, and a maximumon-resistance rating of 0.72mΩ at a draincurrent of 25A and a gate-source voltage of 10V.

The PSMN2R0-25MLD is another member ofthe NextPowerS3 family. This 25V N-channellogic-level MOSFET has a maximum on-resistance rating of 2.27mΩ at 25A and 10V. It supports extremely fast switching.

ON Semiconductor op amps: Wide temperature range

APPLICATIONS• Temperature measurement • Transducer applications • Current sensing

FEATURES• 17µA quiescent current at 3.3V (NCS333)• 21µA quiescent current at 3.3V (NCS325)• 100µs turn-on time• Internal EMI filtering (NCS325 only)



APPLICATIONS• DC-DC converters in servers and

telecoms equipment• Secondary-side synchronous rectification • Voltage regulator modules • Point-of-load modules• Brushed and brushless motor-control

systems• Power ORing

FEATURES (PSMN0R7-25YLD)• 100% avalanche-tested at 190A • Very low gate charge• Fast switching with soft recovery• Low spiking and ringing for low EMI • Low parasitic inductance and resistance



Switch for USB Powered Devicesystems features adjustable current limit

The NX5P3090 from NXP Semiconductors is a precision-adjustable current-limitedpower switch for USB Powered Device (PD) applications.

NX5P3090: Programmable over-current limit

NXP SEMICONDUCTORS

The device includes under-voltage lock-out,over-temperature protection, and reverse-current protection circuits to automaticallyisolate the switch terminals when a faultcondition occurs.

In addition, the Current-limit input pin (ILIM)defines the over-current limit threshold. Anopen-drain fault output indicates when a faultcondition has occurred.

The over-current limit threshold can beprogrammed to values between 400mA and3.3A, using an external resistor. In over-currentconditions, the device will clamp the outputcurrent to the value set by ILIM and keep theswitch on while asserting a Fault flag.

To minimise current surges during turn-onand turn-off, the NX5P3090 implements a

soft-start function which controls the rise andfall times.

The power switch is housed in a 12-bump1.4mm × 1.7mm x 0.4mm chip-scalepackage.

APPLICATIONS• USB PD and USB Type-C ports and hubs• Consumer electronic devices • Portable devices

FEATURES• Supply-voltage range: 2.5V to 5.5V • 29V tolerance on power-supply bus and

Enable pin • 3.3A maximum load current • 30mΩ on-resistance • Surge protection compliant with

IEC 61000-4-5 exceeds ±100V onsupply-voltage pin

• ESD protection:• IEC 61000-4-2 contact discharge

exceeds 8kV on supply-voltage pin• ANSI/ESDA/JEDEC JS-001 Class 2

human body model exceeds 2kV • Contact discharge model rating complies

with AEC-Q100-01 (JESD22-C101E)standard



The 74AHC541-Q100 and 74AHCT541-Q100 are high-speed eight-channelnon-inverting buffer/line drivers withthree state bus-compatible outputs.The 74AHC541-Q100 operates withCMOS input levels. The 74AHCT541-Q100 operates with TTL input levels.

NXP SEMICONDUCTORS The devices are qualified in accordance withthe AEC-Q100 Grade 1 standard for use inautomotive applications. They are rated foroperation at an ambient-temperature range of-40°C to 125°C.

The 74AHC541-Q100 operates from a widesupply-voltage range of 2.0V to 5.5V. The74AHCT541-Q100’s supply-voltage range is4.5V to 5.5V.

The devices draw a maximum leakagecurrent of 2µA, while the maximum supplycurrent is 80µA.

FEATURES• Balanced propagation delays• All inputs have a Schmitt-trigger action• ESD protection:

• MIL-STD-883, method 3015 exceeds 2kV• HBM JESD22-A114F exceeds 2kV• MM JESD22-A115-A exceeds 200V

• Multiple package options



wide operating-temperature range without theneed for complex software-calibrationalgorithms, resulting in easier systemimplementation and a longer product lifespan.

The NCS325 and NCS333 provide rail-to-rail input and output performance, and operatefrom a power-supply voltage ranging from1.8V to 5.5V. The devices offer a gainbandwidth of 350kHz. Peak-to-peak noise isvery low at 1.1µV from 0.1Hz to 10Hz.

Orderable Part Number: STM32F769I-DISCO

FREEBOARDS


Designs to be completed faster after launch of newdevelopment ecosystem for STM32F7 MCUs

The new development tools include a low-costSTM32 Nucleo-144 board featuring theSTM32F767 part. Also available is a DiscoveryKit for the STM32F769, which provides supportfor a TFT-LCD screen and the MIPI®-DSIinterface.

In addition, there are feature-rich evaluationboards for the STM32F769 and for theSTM32F779, which has a cryptographicaccelerator for applications which requiresuperior security functionality.

The evaluation boards and Discovery Kit aresupplied with a 4” QWVGA 800x400 MIPI-DSIdisplay featuring a capacitive touchscreen.

Developers using the STM32F7 hardwareplatforms can take advantage of extensivesoftware support, including the STM32CubeMX

STMICROELECTRONICSinitialisation tool and STM32CubeF7 embeddedsoftware package. This consists of a HardwareAbstraction Layer (HAL) and middlewarecomponents such as the FreeRTOS real-timeoperating system, USB library, and lightweightIP (lwIP) open-source TCP/IP stack.

By using the STM32F7 ecosystem, developerswill for the first time be able to create MCUapplications with sophisticated user interfacesthat would previously have required theresources of a microprocessor. The STM32F7MCUs, which are based on a 216MHz ARM®

Cortex®-M7 core with double-precision floating-point unit and DSP instructions, combineenhanced graphics capabilities with extensiveconnectivity capabilities. These include in particular:• ST’s Chrom-ART Accelerator™ and a

hardware JPEGaccelerator forhigh-speedgraphicsrendering

• STemWinprofessionalgraphics libraryand developmenttools

APPLICATIONS• End-products requiring high-performance

graphics or a sophisticated GUI

FEATURES• Support for USB2.0 OTG• CAN2.0 port and Ethernet with IEEE 1588

time stamping• HDMI consumer electronics control • Camera interface• Dual-mode Quad-SPI interface to high-

speed off-chip memory• Multiple 16- and 32-bit timers • 12-bit 2Msamples/s ADCs• 12-bit DACs• I2S serial interface • Digital filters for a sigma-delta modulator • S/PDIF receiver



STMicroelectronics has released entry-level, mid-range and high-enddevelopment boards for the latestmembers of its STM32F7 microcontrollerseries, which feature up to 2Mbytes ofon-chip Flash memory and peripheralswhich help designers to create richuser interfaces.

Hirose’s BM24 series: page 9NXP’s PESD18VF1Bx: page 22PARTNERWORKING

NextPowerS3 MOSFETs: No Schottky diode





Customisable upscreening and sorting processflows for high-reliability TVS diodes

Littelfuse offers four series of off-the-shelf High-Reliability (HR) TransientVoltage Suppression (TVS) diodes: theSMCJ-HR series, SMCJ-HRA series,SMDJ-HR series, and SMDJ-HRAseries.

LITTELFUSE

Littelfuse HR TVS diodes are well suited toaerospace applications, such as fly-by-wireflight control, engine control, power supply anddistribution, cockpit electronic equipment anddisplays, air conditioning, on-board infotainmentsystems, radar systems, advanced airbornedigital computers, and airfield lighting. They arealso suitable for a wide variety of industrial,and medical applications.

In addition, Littelfuse offers users the abilityto customise the upscreening and sortingprocess flows for HR TVS diodes. Thesecomponents, which protect sensitive electronicequipment from voltage transients induced bylightning surges and other transient-voltageevents, are specially screened and sorted for

Rugged new 36V op amps offer high stability and efficiency

STMicroelectronics has introduced two 36V operating amplifiers which set newstandards for performance and ruggedness in automotive and industrial applications.

STMICROELECTRONICS

The TSB572 dual op amp and TSB611 singleop amp feature a wide supply-voltage range,are stable even in challenging operatingconditions, and tolerate ESD strikes up to 4kV,as tested according to the human body model.

The op amps are the first devices producedusing ST’s new 40V-ready BiCMOSsemiconductor process. This technologyprovides superior efficiency in terms of the ratioof Gain Bandwidth to supply current (GBW/Icc).

In the TSB572 and TSB611, this means thatthe supply current is around five times lower fora given level of performance than in a standardop amp.

In addition, low input-offset voltages andtemperature drift of less than 6µV/°C simplifysystem design, eliminate any need for trimmingor calibration, and ensure consistentperformance over the specified temperaturerange of -40°C to 125°C.

Featuring rail-to-rail inputsand output, the TSB572 offers a2.5MHz GBW and 1.5mVmaximum input-offset voltage. Itis stable with capacitive loads,and highly resistant to phasereversal.

The TSB611 has a 560kHzGBW and can operate from asupply voltage as low as 2.7V. It is a unity-gain-stable device,and has extremely low input-offset voltage of 1mV. Operatingcurrent is just 125µA maximumat 36V.

use in DC line protection in applications thatdemand high reliability.

In the past, HR TVS diodes were specialistproducts which required end-users to shipcommercial-grade components to outsidesub-contractor laboratories to have the extrasorting process performed. This had the effectof extending waiting and delivery times andadding extra expense.

With the availability of upscreening and sortingprocess flows customised to the user’srequirements, buyers can eliminate this wastedtime and money while ensuring greatercomponent quality.

Hybrid FPC-to-boardconnectors for USB3.1connectivity

Hirose has introduced the BM24 series of connectors for space-constrainedapplications that need to support high-speed signal transmission up to 10Gbits/svia a standard USB3.1 second-generation port.

BM24 series: guide ribs in housing body

Eurocard connector range: Standard and fractional DIN sizes

HIROSE

The BM24 range consists of a header andreceptacles to provide a connection between aFlexible Printed Circuit (FPC) and a circuitboard. Featuring a parallel stack which is only0.8mm high when mated, the BM24 seriesmay be accommodated in even the thinnest ofconsumer-product designs.

The connector has a hybrid design whichincludes signal contacts rated at 0.25A andpower contacts rated at 5A. This means thatusers do not have to integrate separate powerand signal connectors into their design, savingcosts and board space.

The pin assignment and the impedancecharacteristic of 85Ω ±9Ω are both compatible

with the USB3.1 Type-C second-generationstandard.

The BM24 offers highly reliable mechanicalconnection, due to the provision of uniquetwo-point contacts and a long effective matinglength of 0.2mm for the power contact, and0.23mm for the signal contact. Guide ribs areincorporated into the housing body, providingfor a wide self-alignment range of 0.3mm inthe x, y direction, and permitting smoothermating operation. In addition, a tactile click isgenerated on mating.

Two-piece connectors instandard industrial formats

TE Connectivity’s (TE) Eurocard two-piece connectors include board-to-board,wire-to-board, ribbon cable-to-board and high-current connectors which all offera high-quality design and provide for excellent Signal Integrity (SI) and electricalperformance.

TE CONNECTIVITY

Because the Eurocardrange offers a broadportfolio of productconfigurations, userscan find a part to suitalmost any standardindustrial connectionformat. The Eurocardconnector familyincludes modelssuitable for use in thefollowing buses:• CIMBUS • FUTUREBUS • MULTIBUS (II) • NUBUS • STE Bus • VME 64X • VMEbus • VXI Bus

TE’s Eurocard connectors also satisfy therequirements of two universal standards:• DIN 41612 applies to two-part connectors

for PCBs• IEC 60603-2 applies to connectors for

frequencies below 3MHz

DIN-compliant devices are available instandard DIN sizes, and also in half, one-thirdand expanded sizes. The Eurocard connectorsalso support various solder post lengths, aswell as ACTION PIN and eye-of-needlecontact tails.

TE Connectivity is a trademark.

HR TVS diodes: Qualified for airborne equipment

APPLICATIONS• Avionics• Industrial equipment• Medical electronics

FEATURES• Standard voltage ranges and power

ratings • Supports compliance with the

RTCA/DO-160 standard for avionics andairborne equipment

• Long history of use in the aerospaceindustry

• HR TVS diodes which have passedWaveform 5, level 5 are also available



APPLICATIONS• Active filtering • Audio systems • Automotive equipment • Power supplies • Industrial equipment• Low- and high-side current sensing

FEATURESTSB572:

• 380µA operating current • Supply-voltage range: 4V to 36V • 30nA maximum input bias current • 5dB gain margin• 0.001% total harmonic distortion and

noise at 1kHz

TSB611:• 125µA maximum operating current at 36V • Supply-voltage range: 2.7V to 36V • 560kHz gain bandwidth product • Rail-to-rail output• 4kV ESD rating on human body model



APPLICATIONS• High-speed trains • Distributed industrial-control systems • Power automation • Data servers and storage systems• Routers

FEATURES• Gold-plated terminations• Flame-retardant materials• Polarised housings• Selective contact loading available



APPLICATIONS• Point-of-sale equipment• Portable handheld devices• Devices requiring USB3.1 connectivity

FEATURES• 10, 20, 24, 30 or 40 signal contacts, two

power contacts• 0.35mm contact pitch• 30V maximum voltage• Maximum ten mating cycles



P • I • ES E C T I O N

NXP’s NX5P3090UK: page 7NXP’s PESD18VF1Bx: page 22PARTNERWORKING


D E S I G N N O T E

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INTERSIL

Designers of high-speed data networks are continually strivingto achieve higher data rates over longer transmissiondistances, and under ever harsher conditions. Networkequipment today has to be able to withstand electrically noisyenvironments, large ground-potential differences and highoperating temperatures.

Design considerations for high-speed RS-485 data links

The applications that are stretching the capabilities of reliable high-speednetworks to the limit include:• Data-acquisition systems in seismic networks • GPS data-transmission links in telecoms basestations• Video transport in traffic-monitoring systems• PLC communication in factory-automation equipment• Motor encoders

The RS-485 standard technology (also known as EIA/TIA-485) iscommonly used for industrial high data-rate networking deployments.This Design Note offers a series of design tips for developers of high-speed RS-485 system and bus nodes.

RS-485 transceiver requirementsTo counteract the potential for signal degradation in RS-485 transmissions,designers should specify high-speed transceivers which offer a highdifferential-output voltage, VOD, and small skews.

A high driver VOD balances the reduction in signal amplitude causedby cable attenuation, data encoding and common-mode loading, andprovides a sufficient noise margin at the remote receiver inputs.

In low-voltage designs, it is important to be aware of the pitfalls in theuse of so-called poor man’s 3V transceivers, as these have poorlydesigned output stages which only provide RS-485-compliant outputvoltages at supply voltages of ≥4V, as shown in Figure 1.

At lower supply voltages, transistor efficiency drops markedly, producinga VOD as much as 40% below the 1.5V minimum required by RS-485equipment. Output voltages at such a low level will not yield a sufficientnoise margin to trigger a remote receiver.

Figure 2 shows a selection of Intersil high-speed transceiver familieswhich offer a very high output-drive capability. They produce a minimumVOD range from 160% of the specified 1.5V minimum at a 4.5V supplydown to 100% at a 3.0V supply, thus delivering true 3V RS-485-compliant drive capability. The typical VOD measured at the highestoperating temperatures actually exceed the RS-485 requirements by 27%at 3V and by 70% to 93% for 5V transceivers.

In addition, a small pulse skew minimises the transceiver’s contributionto the data link’s total jitter budget. All Intersil high-speed transceiversare specified with a maximum pulse skew of 1.5ns. A low part-to-partskew is also important in synchronous applications, in which the clockand data signals come from different transceivers and tight clock-to-data

timing must be maintained.Part-to-part skew is measured between any two

transceivers under identical temperature andsupply-voltage test conditions. Intersil transceivers,which benefit from very low process variations,offer precise switching characteristics, and it is theonly vendor of high-speed RS-485 transceiversspecifying a part-to-part skew as low as ≤4ns.

More robust operationTo ease the process of network maintenance orthe replacement of defective bus nodes duringnetwork operation, Intersil high-speed transceiversprovide hot-plug capability as well as ESD immunityconforming to the IEC 61000-4-2 standard.

Hot-plug capability ensures that during power-up and power-down, thetransceiver’s driver and receiver outputs maintain high impedance,regardless of the logic state of the Enable pins DE and /RE. Thisprevents disturbances on the bus, which otherwise could falsely triggerother bus transceivers. It also gives the local node controller time tostabilise and drive the RS-485 control lines to the desired logic states.

The use of IEC 61000-4-2 ESD protection circuitry safeguards thetransceiver against damage from electrostatic discharges caused by fieldand maintenance personnel. These discharges occur in uncontrolledESD environments, so to mimic these conditions an IEC-ESD testgenerator creates transients with much shorter rise times and pulsewidths and much higher peak currents than a Human Body Model(HBM) ESD generator, which is intended to simulate ESD-controlledenvironments only, as shown in Figure 3.

ESD protection structures designed for IEC 61000-4-2 can often tolerateHBM test voltages of up to 2.5 times their IEC test voltage. Thus anESD structure designed for 8kV IEC contact discharge should be able towithstand a HBM contact discharge of up to 20kV. All Intersil high-speedtransceivers are rated for the more stringent IEC ESD requirements.

Bus-node design tips: component layoutThe pin-out of an RS-485 transceiver is tailored for a straightforwardnode design, as the bus terminals (A/Y, B/Z) are located on one side ofthe IC, and the single-ended data lines (DI, RO) and control lines (DE, /RE)are on the opposite side, as shown in Figure 4.

High-speed bus nodes require the application of controlled-impedance transmission lines to suppress EMI. On the bus side, thedifferential impedance of the bus traces must match the characteristicimpedance of the transmission medium (100Ω or 120Ω). On the controlside, the line impedance of the single-ended traces is commonly set to50Ω.

Controlled-impedance lines may be created by the use of well-definedtrace geometries (length, width, height, and trace spacing) and closeelectrical coupling with a low-inductance reference plane, either groundor power. This is easily accomplished with a bus node consisting of atransceiver and controller. However, with the addition of lightning-protection components, such as the surge resistors and transientsuppressors shown in Figure 4, the design becomes more complicated.

In this case, the spacing of the differential traces is widened, whichcauses the differential impedance to deviate from its intended value. Thisconstitutes an impedance discontinuity which generates reflections andEMI. While discontinuities might be unavoidable, they should be groupedtogether to keep the area they occupy small.

To calculate the required trace geometries accurately, it is advisable touse a field solver programme. This software tool calculates thecharacteristic impedance, signal speed, crosstalk and differentialimpedance. It can also solve for a geometry with almost any arbitrarycross-section. In addition to first-order terms such as line width, dielectricthickness and dielectric constant, second-order terms such as tracethickness, solder mask and trace etch-back can be taken into account.

Layer stackAt least four layers are required to create a PCB design that produceslow EMI, as shown in Figure 5. Layer stacking should be in the followingorder (top to bottom): high-speed signal layer, ground plane, powerplane and control-signal layer.

Routing the high-speedtraces on the top layeravoids the use of vias,with their accompanyinginductances, and allowsfor clean interconnectsfrom the bus connectorto the transceiver busterminals, and from thetransceiver’s high-speedsingle-ended data linesto the subsequent node-controller circuit.

Placing a solid groundplane beneath the high-speed signal layerestablishes controlled

impedances for transmission-line interconnects and provides anexcellent low-inductance path for the return flow of current. Placing thepower plane beneath the ground plane creates additional high-frequencybypass capacitance.

Routing the slower control (enable) signals on the bottom layer allowsfor greater flexibility, as these signal links usually have some margin totolerate discontinuities such as vias, and the separation nearly eliminatescrosstalk from the high-speed data traces.

Intersil transceivers for high-speed networksIntersil supports a wide range of RS-485 applications with a portfolio ofhigh-speed and ultra-high-speed transceivers. The devices helpdesigners to overcome the potential for signal degradation by providingan exceptionally high output-drive capability and highly accurateswitching performance when operating from either 3.3V or 5V powersupplies. Highly robust, these parts can support hot-plug operation andare immune to ESD strikes up to 16kV according to the IEC 61000-4-2standard.

Intersil transceivers are available in 3mm x 3mm DFN packages andsupport a wide operating-temperature range of -45°C to 125°C.

D E S I G N N O T E

Fig. 1: PM3V transceiver operating with a 3.3V supply Fig. 2: Intersil 3V and 5V high-speed transceiversgreatly exceed the RS-485 minimum VOD of 1.5V

Fig. 3: ESD transient comparison between IEC 61000-4-2 and HBM

Fig. 4: Suggested bus-node layout with an FPGA operating as the controller, and including an ISL3159 transceiver

Fig. 5: Recommended four-layer stack for a bus-node design


ADESTO TECHNOLOGIES

Many system designers developing Internet of Things (IoT) devices or low-power RF networks require external memories to helpmanage data logging and over-the-network or Over-The-Air (OTA) updates. Most of these networks have nodes powered by abattery or by harvested energy, and so require external memory designed with low power usage in mind.

Reducing the impact of memory on the power budget in IoT and RFnetwork designs

Adesto Technologies offers two families of devices ideally suited to suchapplications.

The most popular today is the Fusion family of NOR Flash devices,with part numbers in the AT25DFxxx series. They offer a small page size,wide operating-voltage range and deep power-down modes, andprovide a serial peripheral interface to a host controller. Available today indensities up to 4Mbits, later in 2016 the Fusion range is forecast toinclude 8Mbit, 16Mbit and 32Mbit parts. These Flash memories haveindustry-standard footprints, and a range of package styles includingwafer-scale and small-volume dies. Operation over a wide -40°C to125°C temperature range is a selectable option.

The Fusion family’s wide voltage range of 1.65V to 4.4V provides forthe use of various battery chemistries, including lithium polymer,maximising the battery’s capacity usage by supporting operation acrossits entire discharge curve.

The small Page Erase size of 256bytes is markedly smaller than theminimum erase size of 4kbytes typical for standard Flash devices. Aswell as freeing capacity for data storage, this also means that the deviceis ready to accept other commands in around 1.25ms, compared with a4kbyte block erase operation typically taking between 35ms and 60ms.

Adesto also makes it easier for the controller to manage write anderase operations by allowing the Fusion Flash memory to generate aninterrupt when the operation is completed. This allows the controller togo to sleep or to work on other tasks, and to avoid continually pollingthe memory to check when the operation is completed.

Once any operations are completed the controller can put the Fusionmemory into a power-down mode; quiescent current is <200nA.

The Adesto Fusion devices support the security and authenticationrequirements of IoT devices. Offering 128bytes of One-TimeProgrammable (OTP) memory which cannot be altered once it has beenwritten, Adesto Flash memories may be used to store random numbersand unique MAC address identifiers. Further options are included toallow the system designer to restrict access to certain areas of memory.

These features make Fusion memories ideal for use in wireless sensors,medical equipment, industrial automation, personal security equipment,building control and smart lighting.

When the power source available to the designer is even more limited,the attributes of Adesto’s Mavriq Conductive Bridge Memory (CBRAM™)become attractive.

The interface of this non-volatile memory technology is similar to thatof an EEPROM device. Mavriq memories with the RM24Cxxx andRM25Cxxx part numbers share a pin-out with their EEPROM equivalentswith byte-write and page-write options. CBRAM, however, writes 50times faster than EEPROM, while drawing around half as much Readcurrent, making it a good alternative to EEPROM when energyconsumption is of critical importance.

In addition, the Write current of a CBRAM device is 1mA, which isaround five times less than EEPROM. Combining the lower current andthe much faster write time, the energy required to write a byte can be asmuch as 250 times less than an EEPROM uses.

The Mavriq devices are available in densities up to 512kbits, withhigher-density parts forecast for release in the second half of 2017.Designers can replace EEPROMs with a CBRAM memory without anysoftware or hardware changes – they provide an easy way to reducepower consumption with very little effort.

There is, however, still more scope to reduce power consumption.Adesto’s Moneta family of CBRAM devices takes advantage of powerrails already available on many systems-on-chip, eliminating all non-essential charge pumps and voltage regulators within the memory IC.Suitable for use in wearable and energy-harvesting end-products, theMoneta non-volatile memory range with an SPI bus interface featuresRead/Write currents of just 10µA, and stand-by current of 35nA.

The Moneta RM3000 parts are available today in densities from32kbits up to 256kbits, and support various supply voltages. They offerdesigners a new non-volatile memory option which has far lower powerconsumption than static RAM.

D E S I G N N O T E


C I R C U I T C E N T R E

13FOLLOW US NOW – SEARCH FTM BOARD CLUB ON

n PROCESSORCypress Semiconductor: PSoC 5LPNXP Semiconductors: LPC4333

n POWERMurata: MVAD160Diodes Incorporated: AP3512EDiodes Incorporated: AP65101Diodes Incorporated: DF1510S

Recommended parts for ECG monitoring

The electrocardiogramfeatured in this issue’s CircuitCentre requires high-precision, low-noise analoguecircuitry and a controllerwhich can handle many inputand output signals. This isreflected in the choice of partshighlighted in the followingpages, which includesmultiplexers, precision opamps and two very differentmicrocontrollers from Cypress Semiconductor andNXP Semiconductors.

ECG Monitor

n MUXVishay: DG4051A, DG4052A, DG4053ANXP Semiconductors: 74HC4851 and 74HCT4851Fairchild Semiconductor: FSSD06

n REFDiodes Incorporated: AZ431Diodes Incorporated: LM4040

n PROTECTIONAVX: UltraGuard seriesNXP Semiconductors: PESD36VS1ULDiodes Incorporated: D5V0L4B5S

n SPEAKERSTMicroelectronics: LDL112Diodes Incorporated: PAM8304Fairchild Semiconductor: FAB3103

n OP AMPSTMicroelectronics: TSV71xSTMicroelectronics: TSZ12xDiodes Incorporated: AZV832Diodes Incorporated: TLV272

n OPTOVishay: 6N137, VO2601, VO2611,VO2630, VO2631, and VO4661Fairchild Semiconductor: HCPL2630MDiodes Incorporated: T6V0S5

n ETHERNETDiodes Incorporated: PI2EQX8814

CYPRESS SEMICONDUCTORPROCESSORNXP SEMICONDUCTORSPROCESSOR

High-performance parallel processingsupports designs with multiple sensor inputs

Small and low-power, the PSoC 5LP chip offers very high parallelprocessing performance. In a product such as a heart monitor, it is able toprocess signals from multiple sensors with its independent co-processor,which features a 24-bit hardware digital filter, while offloading to the 24independent CPLD-based universal digital blocks tasks which would allbe funnelled through the processor core in a conventional microcontroller.

The PSoC 5LP also provides custom 20-bit analogue front-ends andthe proven CapSense® touch-sensing technology.

Cypress Semiconductor’s PSoC® 5LP programmable system-on-chip combines a 32-bit ARM® Cortex®-M3 processor corewith a hardware co-processor, CPLD-based digital fabric, high-precision programmable analogue blocks and a peripheral-to-peripheral DMA controller.

For more information e-mail [email protected]

160719:

MCU with auxiliary processor foralways-on sensor interfacing

The LPC4333 features an ARM® Cortex®-M4 main processor coresupported by a low-power ARM Cortex-M0 co-processor which iscode- and tool-compatible with the -M4 core.

By configuring a system design so that the co-processor handlessignal inputs from connected sensorsand other input devices, users can holdthe main ARM Cortex-M4 core inpower-down mode for much of thetime. This enables users to keep powerconsumption to a minimum in battery-powered and handheld devices.• Delta-sigma ADC

• Two 12-bit SAR ADCs• Four 8-bit DACs• 1.024V voltage reference

NXP Semiconductors’ LPC4333 is a dual-core 32-bitmicrocontroller offering low-power operation in always-onsensing mode.


160720:Orderable Part Number: CY8CKIT-059

FREEBOARDS


• Two Hi-Speed USB2.0controllers

• One 10-bit DACoperating at aconversion rate of400ksamples/s

• Two 8-channel, 10-bitADCs operating at aconversion rate of400ksamples/s

C I R C U I T C E N T R E C I R C U I T C E N T R E

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New analogue multiplexers suited toprecision instrumentation

The multiplexer offering includes the dual four-channel DG4052E, theeight-channel DG4051E and the triple two-channel DG4053E.

The multiplexers feature a low charge-injection value of 0.3pC, lowswitch capacitance of 2pF, leakage current of less than 50pA, and on-resistance of 66Ω.

All control-logic inputs haveguaranteed 2V Logic High limits whenoperating from a +5V or ±5V supply,and are low-voltage logic-compatiblewhen operating from a 3V supply.

Vishay Intertechnology offers a range of high-frequency, lowcharge-injection analogue multiplexers for use in precisioninstrumentation.


160721:

Analogue MUX/DEMUX devicesprovide eight channels

The devices’ injection current-effect control allows signals at disabledanalogue input channels to exceed the supply voltage without affectingthe signal of the enabled analogue channel. This eliminates the need forthe external diode/resistor networks typically used to keep the analogue-channel signals within the supply-voltage range.

• <1mV/mA injection-current cross-coupling

• 74HC4851 offers widesupply-voltage range of2.0V to 6.0V

• Low on-resistance

• Universal mains inputrange: 85V to 264V AC

• Primary output voltage:12V, 24V or 48V DC

• Optional auxiliary outputrated for 5V DC and0.1A

• <0.3W no-load powerconsumption

The 74HC4851 and 74HCT4851 from NXP Semiconductors areeight-channel analogue multiplexers/demultiplexers with threedigital Select inputs, an active-low Enable input, eightindependent I/Os and a common I/O.


160722:

FAIRCHILD SEMICONDUCTORMUX

VISHAYMUX NXP SEMICONDUCTORSMUX

Conduction-cooled 160W AC-DCpower supply achieves 93% efficiency

Conduction-cooled, the MVAD160 power supplies are suitable forapplications requiring fanless operation in an enclosure with little spacefor air circulation.

The units comply with the internationally recognised safety approvalstandards IEC 60950 and IEC 60601, which certify devices for use in IT,industrial, medical and healthcare equipment.

Murata’s MVAD160 series of 160W AC-DC power supplies ispackaged in an industry-standard 2” x 4” (51mm x 102mm x38mm) format and achieves high efficiency up to 93%.


160724:

Buck converter drives 2A loadsat high efficiency

The AP3512E operates over an input-voltage range of 4.5V to 18V andprovides an adjustable output voltage.

Operating at a fixed frequency of 500kHz, the converter integrates anN-channel power MOSFET switch which is characterised by its low on-resistance. The device’s current-mode control provides for fast transientresponse and a cycle-by-cycle current limit.

• 1µA quiescent current• Programmable soft-start• Over-voltage and over-

temperature protections

The AP3512E from Diodes Incorporated is a 500kHzsynchronous DC-DC buck converter, capable of driving a 2Aload with high efficiency up to 93% and providing excellent lineand load regulation.


160725:

MURATAPOWER

TSZ12x: Rail-to-rail input and output

Op amps offer almost zero offsetand temperature drift

The TSZ12x CMOS devices achieve a low offset drift and eliminate 1/fnoise because of their chopper architecture. Chopper-stabilised op ampsconstantly correct low-frequency errors across the inputs of the amplifier.

These devices also feature rail-to-rail input and output. The offsetvoltage is rated at a maximum 5µV at 25°C. Exceptional accuracy andstability are combined in the TSZ12x series with an excellentspeed/power-consumption ratio.

The TSZ121 is the single version, TSZ122 the dual version and theTSZ124 the quad version. The pin-outs for all three devices arecompatible with industry standards.

The TSZ12x series of high-precision operational amplifiers fromSTMicroelectronics offers a very low input-offset voltage withalmost zero offset drift over temperature.


160727:

DIODES INCORPORATEDPOWER

Op amps combine highaccuracy and low power

The op amps’ input offset voltage is rated at lower than 200µV at 25°C,while they draw less than 14µA at a supply voltage of 5V.

The single version (TSV711), the dual version (TSV712), and the quadversion (TSV714) all offer a rail-to-rail input and output. Typical inputbias current is rated at just 1pA, and is guaranteed to be less than 10pAat 25°C.

These characteristics make the TSV71x family ideal for sensor interfaces,battery-powered and portable applications, and active filtering.

• 150kHz typical gainbandwidth

• 4kV ESD rating on thehuman body model

• Supply-voltage range:1.5V to 5.5V

• 30nV/°C maximum inputoffset-voltage drift

• Rail-to-rail input andoutput

• 4kV ESD rating on thehuman body model

The TSV71x series of operational amplifiers combines lowenergy usage with high accuracy.


160726:

STMICROELECTRONICSOP AMP STMICROELECTRONICSOP AMP

Two-port multiplexer forstorage and multimedia cardsand peripherals

The architectureincludes thenecessary bi-directional data-and command-transfer capability forsingle high-voltagecards, or for dual-voltagecards. The clock path for theFSSD06 is a uni-directional bufferwith an integrated pull-up for its high-impedance mode.

The FSSD06 conforms to the specificationsof the SD, SDIO and MMC standards.

APPLICATIONS• Portable devices• Media players • Storage devices • Computer peripherals • Wireless LAN cards • Broadband access cards

FEATURES• 4Ω on-resistance • >120MHz toggle frequency• 9pF on-capacitance• 1µA maximum quiescent supply current



The FSSD06 from Fairchild is a two-port multiplexer which enables the outputfrom a host application processor, baseband processor or ASIC to be routed tomultiple Secure Digital (SD), Secure Digital I/O (SDIO) or Multimedia Card (MMC)cards or peripherals.

• Operating-temperaturerange: -40°C to 125°C

• 3V to 16V single powersupply or ±3V to ±8Vdual supply

• Rail-to-rail analoguesignal handling

• Available in threepackages: TSSOP16,SO16 and miniQFN16



PAM8304: Efficiency up to 90% LDL112: Reverse-current blocking circuit

Compact Class-D amplifier forportable devices

Achieving high efficiency up to 90% and occupying a small 3mm x 3mmfootprint, the PAM8304 is ideal for portable applications. Because theoutput uses a filterless architecture, it requires only a small number ofexternal components, while providing a high-performance, simple andlow-cost system.

Supporting a supply-voltage range of 2.8V to 6V, the PAM8304 maybe used in battery-powered systems with as many as four cells.

The PAM8304 from Diodes Incorporated is a mono filterlessClass-D amplifier offering a high signal-to-noise ratio up to 95dBand a differential input which helps to eliminate noise. It iscapable of driving speaker loads as low as 3Ω from a 5V supply.


160728:

Small ESD protection diode forportable devices

The device offers up to 30kV of ESD protection. It is AEC-Q101 qualifiedfor use in automotive applications.

NXP also supplies the PESD12VL2BT ESD protection diode, a dualbi-directional ESD diode for protecting two signal lines.

• <1nA leakage current• 150W peak pulse power• 2.5A maximum surge

current• Short-circuit protection• Thermal shut-down

protection • Under-voltage lock-out

The PESD36VS1UL from NXP Semiconductors is a uni-directional ESD protection diode in a small, leadless SOD882surface-mount plastic package suitable for integration intoportable devices. It protects one signal line from the damagecaused by ESD and other transient voltage events.


160731:

DIODES INCORPORATEDSPEAKERSTMICROELECTRONICSSPEAKER

NXP SEMICONDUCTORSPROTECTION

1.2A LDO features reverse-currentprotection and low quiescent current

The LDO’s quiescent current is aslow as 35µA at no load, helpingthe user to achieve good efficiencyin applications supplying a widerange of load currents.

The LDL112 is equipped with aspecial reverse-current blockingcircuit, which prevents any

unwanted current flowing from theoutput to the input in anyoperating condition. This feature isuseful when the load may besupplied by more than one source,such as a battery, a USB port anda wall adapter.

The LDL112 low-dropout (LDO) voltage regulator fromSTMicroelectronics features a very good combination of staticand dynamic performance. It can supply a maximum currentof 1.2A.


160729:

High-speed optocouplers in singleand dual versions

The detector has an open-drain NMOStransistor output, which leaks less currentthan an open-collector Schottky-clampedtransistor output.

The devices’ internal shield provides aguaranteed common-mode transientimmunity of 5kV/µs for the VO2601 andVO2631 and 15kV/µs for the VO2611and VO4661. This provides more designmargin than the industry-standardimmunity value for the 6N137 of 1kV/µs.

• 5mA input-current capability• Operating temperature range:

-40°C to 100°C• UL, cUL, VDE, BSI and CQC

certifications available

• Input-voltage range:1.6V to 5.5V

• 300mV dropout voltageat 1A load

• Compatible with 1µFceramic outputcapacitor

The 6N137, VO2601, and VO2611 from Vishay Intertechnologyare single-channel 10Mbaud optocouplers which use a high-efficiency input LED coupled with an integrated photodiodedetector IC. An Enable pin allows the detector to be strobed.The VO2630, VO2631, and VO4661 are space-saving dual-channel optocouplers, also featuring a 10Mbaud transmission rate.


160732:

AVXPROTECTION

Zinc oxide varistors for ESD protection feature verylow leakage current

AVX has expanded its zinc oxide-based series of varistors for ESDprotection to include a version whichfeatures a low maximum leakagecurrent of 1µA, helping to extendbattery run-time in portable devices.

Intended for use in applications requiring lowpower consumption, the UltraGuard series alsooffers a higher voltage rating and a faster ESDresponse time than any other product on themarket.

The UltraGuard series multi-layer ceramicvaristors feature non-linear, bi-directional voltage-current characteristics similar to back-to-backzener diodes with an EMC capacitor in parallel.The UltraGuard devices, however, offer manyelectrical advantages over zener diodes,including: • better repetitive strike capability• higher in-rush current capability• faster turn-on-time• inherent EMI/RFI attenuation• a markedly smaller footprint

The robust UltraGuard series varistors are ratedto survive 1,000 ESD contact strikes of 15kV.

They are supplied as discrete chips in the0402, 0603, and 0805 sizes; as two-elementpackages in 0405 and 0508 sizes; and as four-element 0612 packages. Various capacitanceoptions are available from the lowest at 40pFup to the highest at 3,000pF. The choice ofworking voltages ranges from 3V to 32V DC,and peak currents range up to 150A.

UltraGuard: Multiple package, capacitance and voltage options

APPLICATIONS• Battery-powered devices• High clock-speed ICs• Low-voltage power converters• Power supervisors • Laser diodes

FEATURES• EMI/RFI filtering in the Off state• Operating temperature range:

-55°C to 125°C with no derating• Range of energy ratings: 0.02J to 0.4J





VISHAYOPTO


www.futureelectronics.com/en/Documents/SupportMaterial/Vishay_Components_IoT.pdf

Download Vishay’sIoT componentsbrochure now!

PartNumber

MagneticOperationThreshold

MagneticRelease

Threshold

OutputConfiguration

AH3772 25G -25G Open-drain


AH3781 25G -25G Internal Pull-upResistor

AH3782 40G -40G Internal Pull-upResistor




C O N N E C T I V I T Y A N D S E N S I N G


The QN9020 from NXP Semiconductorsis a flexible and easy-to-use System-on-Chip (SoC) solution for integratingBluetooth® Low Energy (LE) functionalityinto a host device.

QN9020: Supports both master and slave modes

NXP SEMICONDUCTORS

The low-power Bluetooth Low Energytechnology is used in devices branded asBluetooth Smart, in applications which call forperiodic transmissions of snippets of data, suchas wireless sensors. The QN9020 is suitablefor use in wearable devices, and can run on alow-capacity battery such as a coin cell.

The SoC includes a Bluetooth LE radio andcontroller, protocol stack and profile software,and can operate in both master and slavemodes. It also has a microcontroller with anARM® Cortex®-M0 core and 64kbytes of on-chip memory, giving designers the resourcesto implement some applications on just thischip. Designers can also use the QN9020 as anetwork processor by connecting it to aseparate application processor.

Hall-effect latch family offerssensitivity and output options

The AH377x/AH378x family of high-voltage Hall-effect latch ICs introducedby Diodes Incorporated providesvarious operating magnetic thresholds,making them suitable for a wide rangeof motor-control, rotational-positionand speed-sensing applications.

Diodes’ latch ICs: Ideal for motor- and speed-control applications

DIODES INCORPORATED

The AH377x/AH378x parts operateon a supply voltage between 3Vand 28V, suitable for both consumerand industrial equipment. Thelatches include a reverse-blockingdiode, Zener clamps on the input/output pins, and an output-currentlimit to help provide protection fromtransients and overloads.

An extended temperaturespecification, from -40°C to 125°C,and a low temperature coefficientensure reliable operation at theswitching-threshold points, while a6kV ESD capability improvesrobustness and makes handlingeasier in production.

The AH377x/AH378x latch ICs offer excellentperformance: a 10µs power-on time and a3.75µs response time reduce delays andcommutation errors. A chopper-stabilisedarchitecture with an internal bandgap regulatorensures temperature stability, minimisesswitch-point drift and provides high immunityto stress. The devices also have good RFnoise immunity, further contributing to systemreliability.



Additional system features include a fullyintegrated DC-DC converter and LDO regulator,a low-power sleep timer, a battery monitor, ageneral-purpose 4-channel, 10-bit ADC and 31GPIOs.

APPLICATIONS• Sports and fitness equipment• Healthcare and medical devices• Remote controls• Smartphone accessories• PC peripherals • Wireless sensor networks

FEATURES• Up to -95dBm Receiver sensitivity • Transmit output power from -20dBm to

+4dBm• 3µA sleep mode current with 32kHz

oscillator running• 9.25mA Receive current with DC-DC

converter running• Two general-purpose analogue

comparators• Four general-purpose timers• 2-channel programmable PWM• AES-128 security co-processor



APPLICATIONS• Washing machines and dishwashers• Fridge-freezers• Air-conditioners and cooling fans• Food processors• Power tools • Motors• Pumps and flow meters• Printers and scanners

FEATURES (AH3772)• 10µA maximum output-leakage current• 4mA maximum supply current• 800kHz chopping frequency• 55mA output-current limit



STMicroelectronics’ new LSM6DSLand LSM6DSM six-axis MEMS inertialmodules feature innovative powermanagement, enhanced gyroscopedesign and energy-efficient databatching.

MEMS inertial modules: Improved gyroscope accuracy

STMICROELECTRONICS

These features enable the new devices to cutpower consumption by as much as 50%compared to that of the current LSM6DS3 andLSM6DS3H modules from ST.

In addition, the latest sensors offer bettergyroscope accuracy, enabling them to supportenhanced user experiences such as OpticalImage Stabilisation (OIS), visual localisationdetection and gesture recognition.

Accelerometer-based step detection, step-counting and pedometer functions, as well astilt and significant-motion detection, are alsointegrated to make system implementationeasier for application developers.

The LSM6DSM includes a dedicated additionalprocessing and serial port for camera OIS. Thegyroscope has 40% lower noise and aconfigurable filter which together boost OISperformance when compared to theLSM6DS3H. Use of a LSM6DSM in place of adiscrete OIS sensor not only saves componentcount and board space, but consumes lessthan one-sixth the power of alternative designs.

Housed in a 14-pin 2.5mm x 3.0mm x0.83mm LGA package, the new devices arepin-and-footprint compatible with the LSM6DS3and LSM6DS3H.

APPLICATIONS• Wearable devices• Remote controls• Games consoles• Drones• Virtual-reality headsets

FEATURES• Accelerometer full-scale range:

±2/±4/±8/±16g• Gyroscope full-scale range:

±125/±245/±500/±1,000/±2,000degrees/s

• 0.65mA operating current in combo high-performance mode

• Analogue supply-voltage range: 1.7V to 3.6V

• Up to 4kbyte smart FIFO with batchacquisition




The QN9020DK board features buttons, a piezo buzzer,and an LED providing an easy way to reset the chip andto indicate its status. The DK board also provides a USBinterface. Orderable Part Number: QN9020DK

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Six-axis MEMS sensor modules offer largeefficiency gains

Complete SoC provides for easy implementation ofBluetooth Smart functions


Miniature new time-of-flight sensoroffers higher range and speed

STMicroelectronics has released itssecond-generation laser-rangingsensor based on its highly successfulFlightSense™ Time-of-Flight (ToF)technology.

STMICROELECTRONICS

The new sensor, the VL53L0X, can take rangemeasurements faster, over longer distances,and more accurately. This improvedperformance makes the VL53L0X ideal for awide variety of industrial and consumerapplications such as:• gesture sensing and proximity detection in

user interfaces• wall detection, cliff detection and collision

avoidance for robots• hands-free actuation of home appliances

and taps, soap dispensers and hand dryers

In the new VL53L0X, the ToF measurementrange has been extended to 2m, and distancemeasurement is now accurate to within ±3%.It is also faster, measuring distance in less than30ms, and highly energy-efficient, consumingonly 20mW in active ranging mode and drawing5µA in stand-by mode.

At 2.4mm x 4.4mm x 1mm, the VL53L0X isalso the smallest ToF module in the world.

Current-sense amplifiers achieve high accuracy andhigh stability over temperature

ON Semiconductor’s NCS199x andNCS21x are current-shunt amplifierswhich measure the voltage across ashunt resistor at common-mode voltagesbetween -0.3V and 26V, independent ofthe supply voltage. The two series ofparts offer the designer a wide choice offixed gain values.

Current-sense amplifiers: Low quiescent current

ON SEMICONDUCTOR

The low input offset of their zero-driftarchitecture enables these devices to performcurrent sensing at a maximum voltage dropacross the shunt as low as 10mV full-scale. Thishelps system designers to achieve high energy

efficiency and to minimise power losses. The NCS199x and NCS21x devices can

operate from a single 2.7V to 26V powersupply, drawing a maximum 100µA quiescentcurrent. All versions are specified over theextended operating temperature range of -40°Cto 125°C. Drain current is typically 0.065mA.



Unlike conventional infra-red proximity sensors,the VL53L0X gives accurate distancemeasurements in millimetres, and is unaffectedby the colour or reflectivity of the sensedtarget. Its fast-acting FlightSense technology,well known from the laser-assisted cameraauto-focus featured in several smartphonesfrom top brands, can also distinguishmovement towards or away from the sensor orfrom side to side. Distance is calculatedinternally and communicated over I2C, therebyminimising the processing demands on thesystem host controller.

The integrated eye-safe laser emits non-visible light at a wavelength of 940nm, whicheliminates the distracting red glow typicallyassociated with other infra-red proximitysensors and improves immunity to interferencefrom external light sources.

APPLICATIONS• User presence detection • Robotics• White goods • Gesture recognition • IoT devices• Drones• Laser-assisted auto-focus

FEATURES• Reported range is independent of the

target reflectance • Embedded optical cross-talk

compensation to simplify cover-glassselection

• Class 1 laser device compliant with latestIEC 60825-1:2014 3rd edition standard



APPLICATIONS• Power monitors• Power adapters• Feedback control loops• Current sensors• E-cigarettes• Mobile-device fast chargers• Telecoms DC-DC power modules

FEATURES (NCS199x)• 7ppm/°C gain error over temperature• ±0.01% non-linearity error• ±0.1µV/V power-supply rejection ratio• 100dB minimum common-mode rejection

ratio for NCS199A2 and NCS199A3• 97dB minimum common-mode rejection

ratio for NCS199A1



TE CONNECTIVITYAPPLICATIONS

• Industrial process control and monitoring • Heating, ventilation and air-conditioning • Refrigeration systems • Automotive test stands • Off-road vehicles • Pumps and compressors • Hydraulic or pneumatic systems • Agricultural equipment • Energy generation and management • Pool or spa pump monitoring

FEATURES• CR2050 battery power supply• IP66 or IP67 weatherproofing ratings• Pressure measurements accurate to ±0.1%• Up to 20m signal-transmission range



Absolute pressure sensor includesbuilt-in temperature compensation

The LPS22HB from STMicroelectronicsis a piezo-resistive absolute pressuresensor which functions as a barometerwith a digital output, measuringpressure at 24-bit resolution in a rangebetween 260hPa and 1,260hPa.

STMICROELECTRONICS

Featuring a built-in 16-bittemperature sensor, thedevice implementstemperature compensationautomatically, maintaining itshighest accuracy of ±0.1hPaover a temperature rangeextending from 0°C to 65°C.The sensor’s full operatingtemperature range is -40°Cto 85°C. Its pressure outputdata rate is user-configurableto any of 1Hz, 10Hz, 25Hz,50Hz or 75Hz.

The compact devicecomprises a MEMS sensingelement and an IC interface

which communicates through an I2C or serialperipheral interface from the sensing elementto the application. The sensing element, whichdetects absolute pressure, consists of asuspended membrane manufactured using adedicated process developed by ST.

The LPS22HB’s land-grid array package,which has a hole to allow external pressure toreach the sensing element, measures 2.0mm x2.0mm x 0.8mm.

APPLICATIONS• Altimeter and barometer functions in

portable devices• Satellite positioning equipment• Weather stations • Sport watches

FEATURES• 3µA current at output data rate of 1Hz• Interrupt functions: Data ready, FIFO flags,

pressure thresholds • Supply-voltage range: 1.7V to 3.6V • 22,000g shock survivability




The STEVAL-MET001V1 is an adapter board for theLPS22HB product family which can be plugged into astandard DIL24 socket. The adapter board is supportedby the STEVAL-MKI109V2 motherboard, which includesa high-performance 32-bit microcontroller functioning asa bridge between the sensor and a PC. Orderable Part Number: STEVAL-MET001V1

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To allow the user to validate the VL53L0X in anenvironment as close as possible to its final application,the X-NUCLEO-53L0A1 expansion board is supplied witha cover glass holder in which three different spacers of0.25mm, 0.5mm and 1mm height can be fitted below thecover-glass in order to simulate various air gaps. Orderable Part Number: X-NUCLEO-53L0A1

FREEBOARDS



Part Number Gain(V/V)

Maximum GainError (%)

Gain Bandwidth(MHz)

Maximum InputOffset Voltage (mV)

Maximum Input OffsetVoltage Drift (µV/°C)

NCS210SQT2G 200 ±1 0.04 ±0.060 0.6NCS211SQT2G 500 ±1 0.025 ±0.060 0.6NCS214SQT2G 100 ±1 0.06 ±0.060 0.6NCS199A1SQT2G 50 ±1.5 0.1 ±0.150 2NCS199A2SQT2G 100 ±1.5 0.06 ±0.150 0.6NCS199A3SQT2G 200 ±1.5 0.04 ±0.150 0.6

These accurate, 24-bit pressure sensorsprovide for remote process control andmonitoring via a Bluetooth® 4.0 RF connectionto a host device. They are compatible with theiOS 7+, Android™ 4.3+ and Windows® XP/7+operating systems at the host.

TE Connectivity (TE) has introducedthe M5600 and U5600digital wirelesspressure transducers,which enablepressuremeasurement inharsh environmentswithout the need for awired connection.

CE- and FCC-certified, the M5600 and U5600are suitable for the measurement of liquid orgas pressures, and may be used in harshconditions such as contaminated water, steamor mildly corrosive fluids.

Their stainless steel and polycarbonateenclosure makes them highly durable, and,when ordered with a tapered pressure port,

they have no O-rings or organics exposedto the pressure medium.

TE’s weatherproof M5600and U5600 are availablein a variety of portconfigurations, and for

various pressureranges up to a

maximumpressure of

10kpounds/in2.

Wireless pressure transducers enable remote processcontrol and monitoring

The X-NUCLEO-IKS01A1 is a MEMS motion andenvironmental sensor evaluation system. It features theLSM6DS0 three-axis accelerometer/gyroscope, theLIS3MDL three-axis magnetometer, the HTS221 humidityand temperature sensor and the LPS25HB pressure sensor. Orderable Part Number: X-NUCLEO-IKS01A1

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Orderable Part Number: F143-MINI-2-GEVK

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RFID tag modules ideal for identifying small end-products

MAGICSTRAP® from Murata is a seriesof compact RFID tag modules whichinclude both an RF antenna embeddedin the substrate, and a tag IC. RFID module: integrated antenna

MURATA

This makes it easy for system designers toadd RFID functionality to an end-productwithout requiring expertise in theimplementation of an RFID tag’s RF circuit orprotocol software.

Combined humidity and temperature sensor insmall, thin package

The HTS221 is a compact sensorwhich measures relative humidity andtemperature.

STMICROELECTRONICS

It includes a MEMS sensing element and amixed-signal ASIC, which converts the sensor’smeasurements to digital values provided via anI2C or serial peripheral interface. It has a user-configurable output data rate of 1Hz, 7Hz or12.5Hz. At an output data rate of 1Hz, thedevice draws just 2µA.


Three of the MAGICSTRAP parts aredescribed by Murata as suited to ‘smallproduct management’. Housed in a plasticmoulded chip package, these parts are smallenough to be embedded in very small end-products without affecting their externalappearance.

Designers can use these devices to supportoperation in either the high-frequency13.56MHz band, or the ultra-high frequencyband, 840MHz to 960MHz, specified by RFIDindustry standards.

APPLICATIONS• Product identification• Product authentication• Brand protection• Interactive devices

FEATURES• Package withstands injection moulding

process• Operating-temperature range:

-40°C to 85°C



APPLICATIONS• NFC antenna protection• Protection of high-speed data lines

FEATURES• Up to ±10kV ESD protection according to

IEC 61000-4-2• Very low intermodulation distortion• PESD18VF1BL and PESD24VF1BL are

AEC-Q101 qualified



APPLICATIONS• Air conditioning, heating and ventilation

equipment• Air humidifiers• Refrigerators• Wearable devices• Smart home automation• Industrial automation• Respiratory equipment• Asset and goods tracking

FEATURES• Relative-humidity measurement range:

0% to 100%• Factory calibrated • ±1°C temperature accuracy between

0°C and 60°C• Supply-voltage range: 1.7V to 3.6V



RF MCU enables design of highlyintegrated <1GHz wireless devices

ON Semiconductor’s AX8052F143 is anRF microcontroller offering highperformance combined with low powerconsumption over a broad frequencyrange of 27MHz to 1,050MHz.

AX5043: Narrowband, ultra low-power RF transceiver

ON SEMICONDUCTOR

By combining a microcontroller core with an RFtransceiver in a single chip, the AX8052F143enables designers to save board space, designtime and bill-of-materials costs compared tocircuits comprised of a discrete MCU and RF ICs.

ON Semiconductor provides a developmentecosystem to support the AX8052F1xx familyof devices, including a C compiler, IntegratedDevelopment Environment (IDE) and applicationgenerator. In addition, ON Semiconductor canpre-programme AX8052F143 devices toimplement standard protocols such as SIGFOX,EnOcean, KNX or Wireless M-Bus.

The AX8052F143 is notable for its low powerconsumption. At its maximum RF poweroutput of 16dBm at 868MHz, the transmitterdraws just 48mA. In addition, the receiver’shigh sensitivity – up to -137dBm at a low datarate – enables the AX8052F143 to be used inapplications requiring a high link budget.

Spans of more than 15km are possiblewithout the need for an external RF poweramplifier or low-noise amplifier.

A dedicated AES engine is provided forencryption. For wireless communication atfrequencies up to 1,050MHz, ON Semiconductor also supplies:• the AX5051, a universal wideband single-chip

RF transceiver supporting the 433MHz,868MHz and 915MHz Short-Range Device(SRD) frequency bands

• the AX5043 narrowband, ultra low-power RFtransceiver operating at frequencies between27MHz and 1,050MHz. It supports the FSK,MSK, 4-FSK, GFSK, GMSK, AFSK and ASKmodulation schemes. Unlike the AX8052F143,it does not include a built-in MCU core.

APPLICATIONS• Sensor networks• Security equipment• Building automation• Wireless networks• Automated meter reading• IoT devices

FEATURES (AX8052F143)• Frequency range: 27MHz to 1,050MHz• Draws 950nA in Sleep mode with

wake-up timer running and with 256byteSRAM retention.

• Data-rate range: 10bits/s to 125kbits/s• Supports multiple modulation schemes:

FSK, MSK, 4-FSK, GFSK, GMSK, AFSK,ASK, FM

• 5mm x 7mm QFN40 package• Operating-temperature range:

-40°C to 85°C




The HTS221’s relative-humidity measurementsare accurate to ±3.5% over the range ofrelative humidity between 20% and 80%.Sensitive to very small changes in relativehumidity, the HTS221’s sensing elementconsists of a polymer dielectric planar capacitorstructure manufactured using a dedicated STprocess.

Guaranteed to operate over a temperaturerange from -40°C to 120°C, the HTS221 isavailable in a 2mm x 2mm x 0.9mm land-gridarray package with a hole in the top to exposethe sensing element to external humidity.

Part Number FrequencyBand

Maximum ReadRange* (mm)

Memory(bits) Size (mm) Protocol

LXMS33HCNG-134 HF band 15 896 3.2 x 3.2 x 0.7 ISO 15693

LXMS33HCNK-171 HF band 12 384 3.2 x 3.2 x 0.75 ISO 14443 Type A

LXTBAPHA18-002 HF band 25 384 5.5 x 5.5 x 2.3 ISO 14443 Type A

LXMS21NCNH-147 UHF band 7 7 2.0 x 1.2 x 0.5 EPC global Gen2

* Output from reader: 200mW

ESD protection diodes optimised for NFC systems

The PESD18VF1Bx and PESD24VF1Bx from NXP Semiconductors are ultra-lowcapacitance, bi-directional ESD protection diodes which safeguard devicescontaining an NFC interface from damage caused by ESD strikes and othertransient voltage events.

PESDxxVF1Bx: 10kV ESD protection

NXP SEMICONDUCTORS

Some NFC designs integrate theantenna into the host product’sbattery or battery cover, whichprovides an entry point for ESDstrikes which could damage theNFC controller IC. Housed in aleadless surface-mount package,a PESD18VF1Bx orPESD24VF1Bx diode protectsone signal line from the risk ofsuch damage up to a maximumvoltage of 10kV.

The diodes’ very low capacitance helps tomake it easy to design the NFC antenna-matching circuit.

Part NumberMaximum Reverse

Stand-off Voltage (V)

Typical DiodeCapacitance

(pF)

Maximum DiodeCapacitance

(pF)Package Size (mm)

PESD18VF1BL 18 0.35 0.5 DFN1006-2 1 x 0.6 x 0.48

PESD18VF1BSF 18 0.3 0.45 DSN0603-2 0.6 x 0.3 x 0.3

PESD24VF1BL 24 0.35 0.5 DFN1006-2 1 x 0.6 x 0.48

PESD24VF1BSF 24 0.3 0.45 DSN0603-2 0.6 x 0.3 x 0.3

NXP’s PN7150: page 3PARTNERWORKING

NXP’s NX5P3090UK: page 7Hirose’s BM24 series: page 9PARTNERWORKING

Orderable Part Numbers: OM5578/PN7150ARD (Arduino)OM5578/PN7150RPI (Raspberry Pi)OM5578/PN7150BBB (BeagleBone Black)

FREEBOARDS



Table: sensor performance at 3V supply voltage


UVA/UVB sensor gives accurateindication of skin’s exposure to sun

Vishay Intertechnology has released anew integrated Ultraviolet (UV) lightsensor for the measurement of UVAand UVB light intensity.

VEML6075 UV sensor: Compact surface-mount package

VISHAYFeaturing Filtron technology for high UVsensitivity and linearity, the Vishay VEML6075incorporates a photodiode and signal-processingIC in a compact 2.0mm x 1.25mm x 1.0mmsurface-mount package. It provides an I2C businterface to a host microcontroller.

The sensor may be used to calculate a UVintensity value, to indicate how much UV

radiation a person’s skinwill be exposed to whenoutside. This is anattractive feature inwearable devices such asfitness and health-monitoring wristbands, asit allows the user to takeprecautions to avoid therisk of sunburn in theshort term, and thepotential long-term risk ofskin cancer linked toprolonged exposure tosunlight.

Evaluation board for digital microphones workswith STM32 microcontrollers

The X-NUCLEO-CCA02M1 is anevaluation board which featuresMP34DT01-M digital MEMSmicrophones from STMicroelectronics,and which provides hardware andsoftware links to the Nucleo series ofdevelopment boards for the STM32series of microcontrollers.

X-NUCLEO-CCA02M1: Sample audio application supplied by ST

STMICROELECTRONICS

The board enables the synchronised acquisitionof data and streaming from up to fourmicrophones through I²S or SPI. It can alsoprovide outputs to the Digital Filter for Sigma-Delta Modulators (DFSDM) peripheral inSTM32 microcontrollers.

The X-NUCLEO-CCA02M1 is supported by acomprehensive development library offirmware, provided free to users. ST also offersa sample application for audio capture andUSB streaming which is compatible withSTM32Cube firmware.

Compatible with the ST morpho connectorlayout, the X-NUCLEO-CCA02M1 has twomicrophones soldered on the board.

It is also compatible with digital microphonecoupon boards such as the STEVAL-MKI129Vxand STEVAL-MKI155Vx.

The X-NUCLEO-CCA02M1 offers a quick andeasy tool for developing microphone-basedapplications, as well as a good starting pointfor the implementation of audio algorithms.


The VEML6075 itself maintains excellentperformance even after long exposure to solarUV radiation. It has separate channels for UVAand UVB detection. The peak sensitivity of theUVA channel is 365nm, and for the UVBchannel it is 330nm.

APPLICATIONS• Smart watches• Sports wristbands• Weather stations

FEATURES• Temperature compensation for high

stability between -40°C and 85°C• Software shut-down mode reduces

current to 800nA• Supply-voltage range: 1.7V to 3.6V



APPLICATIONS• VoIP telephones• Speech-recognition devices• Audio-visual eLearning devices• Gaming and virtual-reality input devices• Digital still and video cameras• Anti-theft systems

FEATURES• Six slots to plug in digital-microphone

coupon boards • Compatible with STM32 Nucleo boards • Arduino UNO R3 connector



Pressure, humidity and temperature sensors combinedin a single compact package

TE Connectivity (TE) has introducedthe MS8607-02BA01, a digital system-in-package which senses pressure,humidity and temperature.

TE sensor module: 30nA stand-by current

TE CONNECTIVITY

Factory-calibrated and measuring just 5mm x3mm x 1mm, the MS8607 may be used withany microcontroller that has an I²C interface.

The sensor is notable for its low powerconsumption and high accuracy. In stand-bymode, the sensor draws just 30nA. The peaksupply current during a pressure or temperatureconversion is 1.25mA.

TE’s MS8607 contains two sensors basedon two different MEMS technologies. The firstsensor is a piezo-resistive sensor measuringpressure and temperature.

The second sensor is a capacitive sensormeasuring relative humidity. Each sensor isinterfaced to a delta-sigma ADC for conversionto a digital value. The MS8607 converts bothanalogue output voltages to a 24-bit digitalvalue for the pressure and temperaturemeasurements, and a 12-bit digital value for therelative humidity measurement.

APPLICATIONS• Heating, ventilation and air-conditioning • Weather stations • Printers • Home appliances• Humidifiers

FEATURES• Operating-voltage range: 1.5V to 3.6V• ±2kV ESD rating on the human body

model• Sensor stability ratings:

±1mbar/year pressure±0.5% RH/year humidity±0.3°C/year temperature



Future Electronics’ Board Club: supporting innovative electronics designEurope’s electronics industry thrives on the application of innovation and creativity, and an essentialinnovator’s tool in design projects is the development board. The Board Club website is a Future Electronicsresource for users of development boards. Here, and only here, Board Club members can gain access toexclusive free development boards and development board offers.If you would like to register for membership, please visit: www.my-boardclub.com/register.php

Equipped with embedded NFCfirmware and drivers for the Linux®,Android™ and Windows® Operating Systems(OS), the PN7150 NFC Forum-compliantcontroller enables easy integration of NFCfunctionality into OS-based systems via thestandard NFC Controller Interface (NCI).

The choice of PN7150 interface boards fromNXP makes integration of PN7150-based NFCdesigns very easy: users can select boards forany of the Raspberry Pi, BeagleBone Black orArduino platforms and quickly add NFCfunctionality to a host Single-Board Computer(SBC) running an OS.

NXP SEMICONDUCTORS

NFC controller demo kits support Arduino, Raspberry Piand BeagleBone platforms

For integration into systems running the NullOSand RTOS OSs, NXP supplies a set of codeexamples to run on its microcontrollers.

The new OM5578 demo kits all include aPN7150 NFC controller board and an NFC

Forum Type 2 tag, together with one of threeinterface boards for Arduino,

Raspberry Pi, or BeagleBoneBlack. The Arduino interfaceboard enables the quickimplementation of NFC with

any boards featuring anArduino-compatible header,

including most LPCXpresso,Kinetis and i.MX boards from NXP.

To apply for these free boards go to: www.my-boardclub.com/ftmTerms and conditions apply. Visit www.my-boardclub.com/about_us for details

25

APPLICATIONS• TVs• Set-top boxes• Blu-ray decoders• Audio devices• Home-automation equipment• Home appliances• Wearable devices• Remote controls• Healthcare and fitness equipment• Printers• IP phones• Gaming consoles

FEATURES• Complies with Reader mode, P2P mode

and Card emulation mode standards• High-performance RF antenna



Orderable Part Number: X-NUCLEO-CCA02M1

FREEBOARDS



Pressure (mbar) Relative Humidity (%RH) Temperature

Operating Range 10 to 2,000 0 to 10 -40°C to 85°C

Absolute Accuracy at 25°C ±2 (between 300mbar and 1,100mbar) ±3 (between 20% and 80%RH) ±1

Resolution (maximum) 0.016 0.04 0.01

NXP Semiconductors hasintroduced a series of three demo kits to support its newPN7150, a high-performance‘plug-and-play’ NFCcontroller IC.

T E C H N I C A L V I E W

The two dominant types of power transistor, the MOSFET andthe IGBT, are so familiar and have been used in power-systemdesigns for so many years that it is easy to assume that thedifferences between them remain unchanged from one yearto the next.

Very broadly, this assumption is correct: MOSFETs, as they have alwaysdone, support faster switching speeds and higher efficiency, but are lessrugged and have lower maximum current ratings. IGBTs switch moreslowly and have higher switching and conduction losses, but are morerugged and handle higher peak- and continuous-current values.

The general rule governing the choice of MOSFET or IGBT is constant,then, and for most applications it will be obvious which is the moresuitable device. But in fact both device types are constantly evolving,thanks to the continuous product and technology developmentprogrammes of the main suppliers, such as STMicroelectronics, ON Semiconductor and Fairchild Semiconductor. And so the grey area inwhich an application might be served equally well by an IGBT or by aMOSFET gradually shifts its position as first one then the other device typegains a new feature or benefits from a performance enhancement.

By explaining the operating characteristics of the latest generation ofMOSFETs and IGBTs, this article gives the user a better understanding ofthe application requirements which best suit each device type, clarifyingthe nature of today’s grey area for power transistor choices.

In search of speed and efficiencyThe developments in IGBTs and MOSFETs are in large part aimed atincreasing switching speed – for more precise and accurate control ofpower output and for quicker responses to transient power loads – and atincreasing efficiency, by reducing switching and conduction losses.

In the bi-polar transistors, this process has concentrated on amelioratingthe relatively slow turn-off characteristics, which give rise to the device’slarge ‘current tail’. In addition, IGBT manufacturers worked to reduce thecollector-emitter saturation voltage, VCE(sat), which determines the device’son-state voltage or, in other words, its conduction loss.

While early versions of the IGBT suffered from disadvantages including alarge current tail and a tendency to latch up, in the latest generation ofIGBTs these problems have been largely eliminated.

Another problem with some early IGBT types was their negativetemperature co-efficient, which could lead to thermal run-away: this makesit hard to run multiple devices in parallel to provide a high power output.

The solution tothis problem camewith the developmentof, first, Punch-Through (PT) planartechnology, thenNon-Punch-Through(NPT) planar, andthen in today’sIGBTs, trench-gatefield-stoptechnology, asshown in Figure 1.

These technologies for wafer fabrication have enabled manufacturers tocontinually reduce the mass of silicon inside the device. This has theadvantages of: • reducing unit cost, because more devices can be cut from each wafer• enabling faster switching • reducing the length of the current tail for lower switching losses• reducing the collector-emitter saturation voltage

The reduction in power dissipation has the effect of enabling an increase inpower density, so that today’s IGBTs can handle as much as 50% higheraverage currents than the first IGBTs. Parts benefitting from the latest IGBTtechnology are shown in Table 1.

MOSFET technology: ever lower on-resistanceLike IGBTs, MOSFETs have been through many evolutions over the pasttwo decades.

In the early years, the structure of a MOSFET was planar: the gate pinwas placed horizontally on the silicon body of the device. NewerMOSFETs have benefitted enormously from the drastic improvementsachieved by trench-gate technology, and by the introduction of verticalsuper-junctions. In these new technologies, the gate pin is embeddedmore deeply inside the bulk of the silicon material, enabling it to make farbetter use of the available silicon.

As a result, trench technology has become the preferred structure forMOSFETs, even though planar devices are still available on the market.

The planar MOSFET survives because comparisons with trench-gateMOSFETs show that the planar devices have superior Forward BiasedSafe Operating Area (FBSOA) and Unclamped Inductive Switching (UIS)avalanche capabilities. These studies also show, however, that thereverse-recovery performance of the body diode in trench MOSFETs, ascharacterised by the reverse-current densities, is superior to that ofequivalent planar MOSFETs, as shown in Figure 2.

T E C H N I C A L V I E W

confuses matters further, since these offer higher performance (fasterswitching, lower losses) than silicon MOSFETs, but at a markedly higherunit cost. Today, after the many evolutions in the technology of IGBTs andMOSFETs described above, this cross-over affects applications operatingat more than 250V, switching at a frequency between 10kHz and 200kHz,and operating at power levels over 500W, as shown in Figures 4 and 5.

In the MOSFET’s favour, its structure incorporates a diode which is veryuseful for handling freewheeling currents. In low-voltage MOSFETs up to200V, such as the STM F7 series, Fairchild’s Power Trench series, NXPSemiconductors’ PowerMOS Trench 9 and Trench 8 series, and the VishayGeneration IV series, this integrated diode is very fast. To achieve thesame functionality with an IGBT, the designer must specify a so-called co-packaged IGBT – a discrete fast diode and IGBT housed in a singlepackage, a bigger and more expensive solution than the standard MOSFET.

In applications operating at voltages higher than 500V, the picturebecomes even more clouded: this is because of the development ofSuper-Junction (SJ) MOSFETs addressing high-voltage systems operatingat more than 500V, such as the MDmesh II, MDmesh V, FDmesh II andSuperMESH 5 from STMicroelectronics, the SuperFet II, Easy Drive, Fast,and Fast Recovery (FRFET) series from Fairchild, and the E and EF seriesfrom Vishay. The SJ MOSFET appears to offer an alternative to the co-packaged IGBT at a higher voltage range than the ordinary MOSFET cansupport. The problem is that the SJ MOSFET’s internal body diode isinherently slower than that of the normal FRED co-packaged hyper-fastdiode of an IGBT.

Where necessary, for instance in an H-bridge phase-shift topology, it ispossible to select one of the special SJ MOSFETs supplied with a relativelyfast body diode. Every large MOSFET manufacturer includes in its productportfolio these special high-speed SJ MOSFETS, such as the FDmesh IIfrom ST or the SuperFet II from Fairchild, but even these devices are neveras fast as the hyper-fast diodes found in a standard IGBT.

At high voltages, the SJ MOSFET may be suitable for relatively lowpower outputs. When operating at more than 600V and producing a highpower output, the IGBT remains the only choice. This is because theIGBT’s saturation voltage remains almost constant over the whole currentrange, while the voltage drop caused by a MOSFET’s on-resistanceincreases as current increases. So at high power levels, the IGBT suffersmarkedly lower conduction losses than the MOSFET.

At voltages lower than 600V and with relatively low power outputs, theMOSFET has become a more viable choice in performance terms thanever before, supporting higher switching speeds than the IGBT and providinggreater efficiency. But of course, the most important engineering parameterof all might finally determine the choice after all the performanceconsiderations have been made. That parameter is, of course, unit cost.


How far has new technology allowed theMOSFET to encroach on the IGBT’s territory?

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This is mainly because the structure of the planar MOSFET requires moresilicon material, a greater thickness and a larger contact surface, thantrench MOSFETs need. This gives the planar devices a higher thermalinertia and better thermal dissipation, since the larger contact surface arearesults in lower thermal resistance. On the other hand, it increases theintrinsic parasitic capacitance of the body diode, making it slower.

This means that, when selecting MOSFETs for their specific application,system designers should pay particular attention to: • the parasitics in their circuit• the thermal characteristics of the operating environment • the relative ruggedness or vulnerability of their chosen MOSFET

technology

The most important parasitic parameters to consider are two strayinductances. They can cause over-voltage transients, slow the switchingspeed, and cause unexpected imbalances of the current between devicesconnected in parallel, as well as unwanted oscillations.

The first is an inductance in series to the Source pin. This inductance ispresent in the gate-driving control loop and acts as a sort of feedback,slowing the gate-driver signal. The designer will already be taking care notto exceed the gate-to-source maximum voltage rating. But even if theapplied gate voltage is kept below the maximum, this stray inductancecoupled with the gate capacitance might generate ringing voltages whichcould lead to the destruction of the oxide layer.

The second inductance is in series to the Drain pin. If not clamped, itcauses an over-voltage spike when the device switches off. This effect canbe minimised with the use of snubbers or clamping devices. Moreover, whenswitching on, another effect of this inductance is that the drain voltagefalls, resulting in a discharge of the Miller capacitance, causing the gatedriver to draw more current, and making for a slower overall commutation-transition edge, as shown in Figure 3.

In order to minimise these effects, stray circuit inductance must be kept aslow as possible. This is done by keeping conduction paths as short aspossible, by minimising the area of current loops, by using twisted pairs ofleads, and by using a ground-plane construction.

These measures have the effect of controlling the stray inductances in aMOSFET system, but in fact they constitute good layout practice that isequally valid for users of IGBTs.

Finding the boundary between MOSFET and IGBT applicationsAs shown above, the characteristics of IGBTs and MOSFETs make thechoice of device simple in most applications. But at the cross-over, bothdevice types have trade-offs that make the choice less obvious. And thedevelopment of MOSFETs based on Silicon Carbide (SiC) technology

READ THIS ARTICLE TO FIND OUT ABOUT• Improvements to MOSFET and IGBT technology which enable

faster switching and produce lower switching and conductionlosses

• The benefits and drawbacks of using super-junction MOSFETs ratedfor voltages higher than 600V

• The voltage, power and frequency values at which either a MOSFETor an IGBT is clearly a better choice

By Daniele ViganòPower and Linear Specialist Engineer, Future Electronics (Italy)

Fig. 1: Comparison of the structure of a planar (left) and a trench-gatefield-stop IGBT (right). (Source: STMicroelectronics)

Fig. 2: Performance of a planar MOSFET (FDB44N25) compared with a similar device implemented intrench-gate technology (FDB2710) at Turn On (left) and Turn Off (right) reverse recovery. Source: Fairchild

Fig. 3: The effects of Source stray inductance at turn-on

Table 1: The latest families of IGBTs offering low losses and high switching speeds


Manufacturer IGBT FamilyDesignation

Switching Speed

Voltage Rating

STMicroelectronics H Series Up to 30kHz 600VSTMicroelectronics HB Series Up to 60kHz 650VSTMicroelectronics V Series Up to 80kHz 650VFairchild Semiconductor SHD Series Up to 60kHz 650VON Semiconductor L2 Family Up to 20kHz 600VON Semiconductor FL2 Family Up to 50kHz 650VON Semiconductor IHR Family Soft Switching Up to 1,350VFairchild Semiconductor M Series Up to 20kHz 1,200VSTMicroelectronics H Series Up to 50kHz 1,200VSTMicroelectronics SMD Series Up to 60kHz Up to 1,200VON Semiconductor L2 Family Up to 20kHz 1,200VON Semiconductor FL2 Family Up to 50kHz 1,200V

Fig. 4: The functional sweet spots of MOSFETs and IGBTs

Fig. 5: A typical efficiency v current plot for IGBTs and MOSFETs

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