Cmos Aoi Design
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Transcript of Cmos Aoi Design
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Chapter 1Introduction to CMOS Circuit
Design
Jin-Fu LiAdvanced Reliable Systems (ARES) Lab.
Department of Electrical EngineeringNational Central University
Jhongli, Taiwan
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 2
Introduction
MOS Transistor Switches
CMOS Logic Circuit and System Representation
Outline
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 3
Binary Counter
Presentstate
Next state
a b A B
0 0 0 1
0 1 1 01 0 1 1
1 1 0 0
A = ab + abB = ab + ab
A
B
a
b
CKCLR
Source: Prof. V. D. Agrawal
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 4
1-bit Multiplier
A
B
C
C=AxB
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 5
Switch: MOSFET MOSFETs are basic electronic devices used
to direct and control logic signals in IC design MOSFET: Metal-Oxide-Semiconductor Field-
Effect Transistor
N-type MOS (NMOS) and P-type MOS (PMOS)
Voltage-controlled switches
A MOSFET has four terminals: gate, source,drain, and substrate (body)
Complementary MOS (CMOS) Using two types of MOSFETs to create logic
networks
NMOS & PMOS
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 6
P-N Junctions
A junction between p-type and n-typesemiconductor forms a diode.
Current flows only in one direction
p-type n-type
anode cathode
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 7
NMOS Transistor
Four terminals: gate, source, drain, body
Gateoxidebody stack looks like a capacitor Gate and body are conductors
SiO2 (oxide) is a very good insulator
Called metaloxidesemiconductor (MOS) capacitor
Even though gate is no longer made of metal
n+
p
GateSource Drain
bulk Si
SiO2
Polysilicon
n+
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 8
NMOS Operations
Body is commonly tied to ground (0 V)
When the gate is at a low voltage:
P-type body is at low voltage Source-body and drain-body diodes are OFF
No current flows, transistor is OFF
n+
p
GateSource Drain
bulk Si
SiO2
Polysilicon
n+D
0
S
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 9
NMOS Operations (Cont.)
When the gate is at a high voltage: Positive charge on gate of MOS capacitor
Negative charge attracted to body
Inverts a channel under gate to n-type
Now current can flow through n-type silicon fromsource through channel to drain, transistor is ON
n+
p
GateSource Drain
bulk Si
SiO2
Polysilicon
n+D
1
S
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 10
PMOS Operations
Similar, but doping and voltages reversed Body tied to high voltage (VDD)
Gate low: transistor ON
Gate high: transistor OFF
Bubble indicates inverted behavior
SiO2
n
GateSource Drain
bulk Si
Polysilicon
p+ p+
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 11
Threshold Voltage
Every MOS transistor has a characterizingparameter called the threshold voltage VT
The specific value of VT
is established duringthe manufacturing process
Threshold voltage of an NMOS and a PMOS
VA=1
Mn On
VA=0
Mn Off
VDD
VA
VTn
0
Logic translation
VA
VGSn
Drain
Mn
Source
Gate-source voltage
Gate
+-
VA=1
Mp Off
VA=0
Mp On
VDD
VA
VDD-|VTp|
0
Logic translation
NMOS PMOS
VA
VGSp
Drain
Mp
Source
Gate-source voltage
Gate
+
-
VDD
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 12
MOS Transistor is Like a Tap
Source: Prof. Banerjee, ECE, UCSB
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 13
MOSFET & FinFET
MOSFET
Bulk FinFET SOI FinFET
G
S(D)
D(S)
G
S(D)
D(S)
G
D(S)S(D)
Buried OxideOxide
Si-SubstrateSi-Substrate
Si-Substrate
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According to the gate structure, FinFET canbe classified as Independent-Gate (IG) FinFET
Short-Gate (SG) FinFET
Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 14
IG & SG FinFETs
IG FinFET SG FinFET
G
S(D)
D(S)
Oxide
Si-Substrate
GS(D)
D(S)
Oxide
Si-Substrate
G
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 15
MOS Switches
NMOS symbol and characteristics
PMOS symbol and characteristics
5v
0v
0v5v
0v
5v
0v
5v-Vth
Vth
Vth
Vth
5v
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 16
CMOS Switch
A complementary CMOS switch Transmission gate
C
5v
a
s
b a
s
b a
s
b
-s -s
0v
5v
0v
0v
5v
Symbols
Characteristics
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 17
CMOS Logic-Inverter
The NOT or INVERT function is oftenconsidered the simplest Boolean operation F(x)=NOT(x)=x
Vin Vout Vin Vout
0
Vdd
Vdd Vdd Vdd
1 1 0 Vdd/2 Indeterminate
logic level
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 18
Combinational Logic
Serial structure
S1
S2
S1
S2
S1=0
S2=0
S1=0
S2=1
S1=1
S2=0
S1=1
S2=1
S1=0
S2=0
S1=0
S2=1
S1=1
S2=0
S1=1
S2=1
a
b
b
a
S1
S20
1
0 1
S1
S20
1
0 1
a!=b a!=b
a!=b a=b
a=b a!=b
a!=b a!=b
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 20
NAND Gate
A
B
A
B
Output
Output
A
B1
0
10
1 1
1 0
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 21
NOR Gate
A
B
A
B
Output
Output
A
B1
0
10
1 0
0 0
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 22
Compound Gate
A B
A
B
FF
C D
C
D
AB
CD
))()(( CDABF
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 23
Structured Logic Design
CMOS logic gates are intrinsically inverting The output always produces a NOT operation
acting on the input variables
For example, the inverter shown belowillustrates this property
VDD
f=0a=1
1
0
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 24
Structured Logic Design
The inverting nature of CMOS logic circuitsallows us to construct logic circuits for AOIand OAI expressions using a structured
approach AOI logic function Implements the operations in the order AND then
OR then NOT E.g.,
OAI logic function Implements the operations in the order OR then
AND then NOT
E.g.,
dcbadcbag ..),,,(
)()(),,,( dcbadcbag
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 26
Dual Property
If an NMOS group yields a function of the form
then an identically wired PMOS array gives thedual function
where the AND and OR operations have beeninterchanged
This is an interesting property of NMOS-PMOSlogic that can be exploited in some CMOS designs
)( cbag
)( cbaG
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 27
An Example of Structured Design
)( dcbaX
VDD
a
b
a
X
b
dc
d
c
Group 1 Group 2
Group 3
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 28
An Example of XOR Gate
Boolean equation of the two input XOR gate , this is not in AOI form
But, , this is in AOI form
Therefore,
bababa
bababa
babababa )(
VDDa
b
a
b
a
b
b
a
ba
VDDa
b
a
b
a
b
b
aba
XOR Gate XNOR Gate
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 30
Static CMOS Summary
In static circuits at every point in time (exceptwhen switching), the output is connected toeither Vdd or Gnd through a low resistance path
Fan-in of n(or ninputs) requires 2n(nN-type and nP-type) devices
Non-ratioed logic: gates operate independent of
PMOS or NMOS sizes No path ever exists between Vdd and Gnd: low
static power
Fully-restored logic (NMOS passes 0 only andPMOS passes 1 only
Gates must be inverting
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Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 31
Design Flow for a VLSI Chip
Specification
Behavioral Design
Structural Design
Physical Design
Function
Function
Function
Timing
Power
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Behavior Representation
A one-bit full adder (Verilog)
modulefadder(sum,cout,a,b,ci);
outputsum, cout;inputa, b, ci;
regsum, cout;
always @(a or b or ci) begin
sum = a^b^ci;
cout = (a&b)|(b&ci)|(ci&a);
endendmodule
ci
a b
cout
sum
fadder
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