Cluster Implants for Advanced Productivity€¦ · Centripetal force is balanced by magnetic force...
Transcript of Cluster Implants for Advanced Productivity€¦ · Centripetal force is balanced by magnetic force...
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1 05/24/05
Cluster Implants for Advanced Productivity
Dr. Leonard RubinAxcelis Technologies
Acknowledgements: Patrick Splinter, Michael Graf
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Cluster Implant ProductivityOutline
! Productivity Advantages & Challenges of Borane Implantation! Axcelis History of Borane Implantation! Machine Design Considerations! Process Applications, Effects and Results! Summary
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Boron & Borane Compounds
! Boron (B)
! Boron Difluoride (BF2)
Mass Mass/11Mass Mass/11
11 111 1
49 ~4.549 ~4.5
~120 ~11~120 ~11
~210 ~19~210 ~19
! Decaborane (B10H14)
! Octadecaborane (B18H22)
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“Big Borane” B10H14 & B18H22Benefits and Motivation
! Can dramatically increase ultra-low energy implant throughput
! Implanter can run at much higher extraction energies
! “Drift” operation only thus no energy contamination caused by deceleration
! Same equivalent boron flux can be delivered with much lower electrical beam current
! Low angular divergence
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Boranes – Challenges
! Challenges• Machine design considerations
– Achieving broad application space– Design of production capable hardware
• Demonstration of process equivalence
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Cluster Implant ProductivityOutline
! Productivity Advantages & Challenges of Borane Implantation
! Axcelis History of Borane Implantation! Machine Design Considerations! Process Applications, Effects and Results! Summary
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Decaborane Development History at Axcelis! Axcelis experimented with decaborane in 1995
• R&D efforts suspended due to insufficient temperature control in the delivery system.
! Effort restarted in 1999
! Using Decaborane, equivalent beam current on GSD200/E2 platform• 6.5mA @ 2keV • 3.5mA @ 0.5keV
! Source lasted only 10-20 hours before maintenance required
! Production version not completed due to short source life and machine dedication issue
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Decaborane Development History at AxcelisSource Technology – Temperature Control 1999! Decaborane production is dependent on arc chamber temperature! Operating temperature is less than decomposition temperature
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Decaborane Development History at AxcelisSource Technology – Temperature Control 1999
! External temperature control• Circulating coolant loop
around vaporizer and delivery tube maintains temperature equilibrium
! Internal temperature control• Circulating coolant loop
through source body limits upper temperature range
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Decaborane Development History at Axcelis 1999-2000Summary
! Determined temperature range of decaborane decomposition
! Designed and built a temperature-controlled decaborane ion source
! Observed the dimer of decaborane (B20H28)
! Oral presentation at IIT 2000
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Cluster Implant ProductivityOutline
! Productivity Advantages & Challenges of Borane Implantation! Axcelis History of Borane Implantation
! Machine Design Considerations! Process Applications, Effects and Results! Summary
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Analyzer Magnet Design
qvBR
mv =2
Basic magnet design:
Centripetal force is balanced by magnetic force
Mass-energy product is a good way to describe how “strong” an analyzer magnet is
2)(BRq
mE ∝
Borane ions have higher mass and are transported at higher energy – this is challenging for standard analyzer magnet systems
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Selectable Selectable resolving resolving apertureaperture
Transport of B18Existing Tool Configurations – Optics Details
70º,54cm9090GSD200/E2-180
70º,54cmNone90GSD200/E2-90
90º,30cmNone80Ultra
Analyzer Magnet (bend angle, radius)
Acceleration Energy (kV)
Extraction Energy (kV)Tool
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Transport of B18Existing Tool Configurations – Optics Details
70º,54cm9090GSD200/E2-180
70º,54cmNone90GSD200/E2-90
90º,30cmNone80Ultra
Analyzer Magnet (bend angle, radius)
Acceleration Energy (kV)
Extraction Energy (kV)Tool
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Transport of B18Existing Tool Configurations – Optics Details
70º,54cm9090GSD200/E2-180
70º,54cmNone90GSD200/E2-90
90º,30cmNone80Ultra
Analyzer Magnet (bend angle, radius)
Acceleration Energy (kV)
Extraction Energy (kV)Tool
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Maximum Equivalent Boron Energies – B18
7.24.72.546.99840GSD200/E2-
180
2.50.02.546.99840GSD200/E2-901.50.01.528.56000Ultra
Maximum Total B -
Equivalent Energy (keV)
Maximum B Equivalent
Acceleration (keV)
Maximum B -Equivalent Extraction
(keV)
Maximum Extraction
Energy - B18 (keV)
Maximum Mass x Energy
(keV-AMU)Tool
Fixed by Magnet Design
(Radius and Magnetic Field)
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Maximum Equivalent Boron Energies – B18
7.24.72.546.99840GSD200/E2-
180
2.50.02.546.99840GSD200/E2-901.50.01.528.56000Ultra
Maximum Total B -
Equivalent Energy (keV)
Maximum B Equivalent
Acceleration (keV)
Maximum B -Equivalent Extraction
(keV)
Maximum Extraction
Energy - B18 (keV)
Maximum Mass x Energy
(keV-AMU)Tool
= (Mass*Energy)/210
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Maximum Equivalent Boron Energies – B18
7.24.72.546.99840GSD200/E2-
180
2.50.02.546.99840GSD200/E2-901.50.01.528.56000Ultra
Maximum Total B -
Equivalent Energy (keV)
Maximum B Equivalent
Acceleration (keV)
Maximum B -Equivalent Extraction
(keV)
Maximum Extraction
Energy - B18 (keV)
Maximum Mass x Energy
(keV-AMU)Tool
= (Max B18 Extraction)*(11/210)
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Maximum Equivalent Boron Energies – B18
7.24.72.546.99840GSD200/E2-
180
2.50.02.546.99840GSD200/E2-901.50.01.528.56000Ultra
Maximum Total B -
Equivalent Energy (keV)
Maximum B Equivalent
Acceleration (keV)
Maximum B -Equivalent Extraction
(keV)
Maximum Extraction
Energy - B18 (keV)
Maximum Mass x Energy
(keV-AMU)Tool
= (Max Accel)*(11/210)
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Maximum Equivalent Boron Energies – B18
7.24.72.546.99840GSD200/E2-
180
2.50.02.546.99840GSD200/E2-901.50.01.528.56000Ultra
Maximum Total B -
Equivalent Energy (keV)
Maximum B Equivalent
Acceleration (keV)
Maximum B -Equivalent Extraction
(keV)
Maximum Extraction
Energy - B18 (keV)
Maximum Mass x Energy
(keV-AMU)Tool
= (Max Ext) + (Max Accel)
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Low Energy Beam Propagation –the effects of space charge
Example of beam expansion due to space charge:
2 keV B+ 10 mA
0
1
2
3
4
5
6
0 0.1 0.2 0.3 0.4 0.5
distance along beamline (m)
bea
m s
ize
(no
rmal
ized
)
0 1 2 4
relative space charge
Methods for controlling space charge for low energy transport – Magnetic confinement, beamline plasma’s, PEF’s, etc.
323 mvI
EmI
K ∝∝
Perveance (K) is an important beam transport parameter that determines space charge forces
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Space charge is significantly improved for Boranes
~ 0.0029~ 0.0090.221Relative space charge for
equivalent dopant flux
4.45
1
BF2+
(49)
~ 19~ 111Ion energy for equivalent
dopant velocity
18101Dopant flux for equivalent
ion current
B18Hx+
(~ 210)
B10Hx+
(~ 120)
B+
(11)
B18 delivers 18:1 B18 delivers 18:1 dopant for given ion dopant for given ion charge charge
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Space charge is significantly improved for Borane’s
~ 0.0029~ 0.0090.221Relative space charge for
equivalent dopant flux
4.45
1
BF2+
(49)
~ 19~ 111Ion energy for equivalent
dopant velocity
18101Dopant flux for equivalent
ion current
B18Hx+
(~ 210)
B10Hx+
(~ 120)
B+
(11)Ion energy 19 times Ion energy 19 times higher higher
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Space charge is significantly improved for Borane’s
~ 0.0029~ 0.0090.221Relative space charge for
equivalent dopant flux
4.45
1
BF2+
(49)
~ 19~ 111Ion energy for equivalent
dopant velocity
18101Dopant flux for equivalent
ion current
B18Hx+
(~ 210)
B10Hx+
(~ 120)
B+
(11)
Space charge Space charge reduced by a factor reduced by a factor of more than 300 of more than 300
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Reduced space charge with borane molecules results in beam size improvement – experimental evidence
0
0.2
0.4
0.6
0.8
1
-150 -100 -50 0 50 100 150
position (mm)
bea
m c
urr
ent (
rela
tive)
B18
B
Lower space charge can Lower space charge can result in a much narrower result in a much narrower beam profile at the waferbeam profile at the wafer
Results in increased beam Results in increased beam utilization efficiency on utilization efficiency on multimulti--wafer and scanned wafer and scanned platformsplatforms
Axcelis 8250Axcelis 8250
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Cluster Implant ProductivityOutline
! Productivity Advantages & Challenges of Borane Implantation! Axcelis History of Borane Implantation! Machine Design Considerations
! Process Applications, Effects and Results! Summary
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1.E+11
1.E+12
1.E+13
1.E+14
1.E+15
1.E+16
1.E+17
0.1 1 10 100 1000 10000Energy (keV)
Do
se (
ato
ms/
cm2 )
1011
1012
1013
1014
1015
1016
1017
Noise Isolation
Wells (P,B)
CMOS Retrograde
Wells (P,B,As)
CCD Wells (B)
Threshold Voltage Adjust (As,BF2,B,P,In)
Channel Engineering (As,BF2,P,B,In,Sb)
Anti-punchthrough (As,B,In,Sb)
Latchup/ ESD Protection (B)
Bipolar Buried Subcollector (P,As)
Source/Drain Extension (As,BF2,B)
Source/Drain Contact
(As,BF2,B)
Polysilicon Doping (As,B)
Bonded Wafer Splitting for SOI (H,He)
Preamorphization (Ge,Si)
Potential B10 and B18Applications
≤≤≤≤90nm Dual Poly Gate Doping
≤≤≤≤65nm Extension
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Ultra Low Energy Extension Device Investigations
! Published• 2004 Renesas/SemEquip @ IIT (B18
+; showed B+ equivalence)• 2002 Agere/Axcelis (B10
+; showed B+ equivalence)• 1997 Fujitsu (B10
+; showed B+ equivalence)
! All indications that big borane will work for extension implants
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B18H22 Spectrum
! Typical mass spectrum• With mass resolution ~ 15
! Peak B18 current in the range of AMU 200 – 210• Contains contributions ranging
from 10B18H6 to 11B18H22
• Contribution from any B17 or other Bx combinations is typically very small
0
0.2
0.4
0.6
0.8
1
0 50 100 150 200 250 300
AMU
beam
cur
rent
(rel
ativ
e)
2 keV B equivalent spectrum2 keV B equivalent spectrum
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SemEquip ClusterIon™ Source18 mA equivalent current @ 2 keV on Axcelis Ultra
996.9 µµµµA
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ClusterIon™ Source Evaluation on Axcelis 8250 –Uniformity & Dose! B18 bare wafer uniformity roughly equivalent to B+ results
• No SEF was used• All beams corrected to better than 0.5% non-uniformity
! Dose matching to Ultra confirmedRs vs Energy
0
100
200
300
400
0.1 1 10
B+ equivalent energy
Rs
mea
n (o
hm
/sq)
Rs8250 RsUltra Rs
Energy (equiv keV)
Ibeam (equiv uA)
Rs uniformity (1 sigma)
9 1178 0.543 1190 0.711 1176 0.99
0.5 1041 1.070.2 536 1.98
Courtesy Dr. Ned Eisner Nov-2004
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0.2 keV EquivalentBoron SIMS – Comparison with Ultra
! Overall SIMS profile is well-matched to B+ implant
! Large difference in 10B concentrations is expected• Ultra uses enriched BF3
• B18 is isotopically natural (contains 10B and 11B)
B181: 4keV B18+; (7,27) tiltB209: 0.2keV B+ Ultra; (5,1.5) tilt
1.E+16
1.E+17
1.E+18
1.E+19
1.E+20
1.E+21
1.E+22
0 5 10 15 20 25 30
Depth [nm]
Con
cent
ratio
n [a
tom
s/cm
3]
B181--11B: 2.846E+14B209--11B: 3.511E+14B181--10B: 6.438E+13B209--10B: 9.461E+11
1111B : B : 1010B ratio is ~ 4:1B ratio is ~ 4:1
for B18 implantfor B18 implant
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B202: 20keV B18+R010: 1keV B+ 8250
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
0 10 20 30 40
Depth [nm]
Co
un
trat
e [c
ou
nts
/sec
]
B202: 1HR010: 1H
Hydrogen SIMS
! H SIMS profile with B18
shows small difference from standard B+ implant• Assumption: implanted
hydrogen relatively small compared to hydrogen at the wafer
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Cluster Implant ProductivityOutline
! Productivity Advantages & Challenges of Borane Implantation! Axcelis History of Borane Implantation! Machine Design Considerations! Process Applications, Effects and Results
! Summary
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Summary
! Significant productivity improvements are possible with Boraneimplantations• Extension Implants• Dual Poly Gate
! Existing machines support generation and transport• But have limits in the maximum energy due to the analyzer magnet
capability• Dedicated machines?
! Process integration is promising• Little measureable difference between borane implants and boron
implants.