Challenges for MEMS: Going from MEMS to NEMS for lower...
Transcript of Challenges for MEMS: Going from MEMS to NEMS for lower...
Challenges for MEMS: Going from MEMS to NEMS for lower cost and higher integration
Jean-Philippe POLIZZI CEA Leti, France
iNemi Workshop May 10th 2012- Pittsburgh
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Leti at a Glance Figures 2010
Founded 1967 as part of CEA
Staff 1700
Budget 250 M€
Capex 40 M€
Industrial Partners 265
Joint Labs 30
Value Creation
1700 Patent portfolio (265 filed in 2010)
40% Under license
37 Startups created; 5 within the last 2 years Léti/Minatec at Grenoble (F)
200 and 300mm lines
8,000 m² clean rooms
Continuous operation
© CEA. All rights reserved
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30 years background in MEMS
80 85 90 95 00 05
year
10 15
Tra
nsfe
rs
Quartz
accelerometer
Weight sensor Hygrometer Pressure sensor
Pacemaker accelerometer
Geophone Accelerometer Inertial
platform
Ke
y d
ate
s
bulk technology
Surface micro-
machining
« Intra-CMOS »
demonstration
Waferscale
packaging
M&NEMS concept
Thin film
packaging
Above IC MEMS
demonstration
Comb drive
accelero patent
MEMS
technology
NEMS for
gas detection
Startup
19
97
Startup
20
11
LETI / Caltech Alliance
20
07
NanoSystems
Partnership
20
09
Common lab.
20
10
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Why going from MEMS to NEMS ?
Large volume markets
(Automotive/Consumer)
Strong pressure
on prices
Smaller devices
Consumer markets More integration The 10 axis sensor
•3 axis accelerometer
•3axis gyrometer
•3axis magnetometer
•1 P sensor
Mobile phones, gaming, tablets, e-books,
digital cameras, camcorders, HDD
protection, laptop, Personal media
Players,set-up boxes, GPS, sport
equipments…
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Down scaling MEMS…a solution ?
Typical sizes : ~10 nm – 100 nm (X, Y, Z)
Used material : silicon structured by microelectronic tools
500 µm
80 nm
10 µm
1 µm
Source LETI – MIMOSA project
Seismic mass is reduced impact on the sensitivity
Smaller capacitance and capacitance variation lower S/N ratio
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Miniaturization issues
Electromagnetic
detection
Me
an
P
erform
an
ces
Typical dimensions / Complexity
Inte
grati
on
level
few cm3
Macr
osco
pic
senso
r
gM 2
Piezoresistive or
electrostatic out of
plane detection
few mm3
1000
M
Bulk
mic
rom
ach
inin
g
ME
MS
sensor
“In
IC
”M
&N
EM
S s
en
so
r
Electrostatic,
MOS detection,...
< 0,01mm²
710.5
M
1mm²
Electrostatic in
plane detection
50000
M
Surf
ace m
icro
machin
ing
ME
MS
sensor
new design
new design
new design
?
Electromagnetic
detection
Me
an
P
erform
an
ces
Typical dimensions / Complexity
Inte
grati
on
level
few cm3
Macr
osco
pic
senso
r
gM 2
Piezoresistive or
electrostatic out of
plane detection
few mm3
1000
M
Bulk
mic
rom
ach
inin
g
ME
MS
sensor
“In
IC
”M
&N
EM
S s
en
so
r
Electrostatic,
MOS detection,...
< 0,01mm²
710.5
M
1mm²
Electrostatic in
plane detection
50000
M
Surf
ace m
icro
machin
ing
ME
MS
sensor
new design
new design
new design
?
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Compared to standard MEMS
• Area gain design (suitable for consumer applications)
• Or Sensitivity improvement (suitable for defense applications)
• Mix on a same device two different thicknesses – A thick layer for the inertial mass (MEMS)
– A thin layer for the gauge (NEMS)
Investigated Solutions
Gauge Mass Separate optimization
The M&NEMS concept
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Piezoresistive gage
Rotation axis
Seismic mass
Principle
VS
V0
R
V0
R
F = M.
F
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Piezoresistive gage
Rotation axis
Seismic mass
Principle
VS
V0
R
S = 50 mV/V full scale
( max= 100MPa)
R
RR
V0
R
R- R
R+ R
F = M.
F
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Stress magnification induced by design lever effect
m
In-plane measurement
Stress magnification induced by the Nano-gauge
Total Magnification : x3000
Top view
Cross section
view
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2 different thicknesses
Out-of-plane detection
Rotation axis
m
Out of plane measurement
Anchor
Seismic mass
gauge
Stress magnification induced by design lever effect & nano-gauge
Total Magnification : x1000
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250nm
250nm
M&NEMS accelerometer demonstrator
15µm
• Proof of concept design and fabrication of
accelerometer have been achieved
• Typical dimensions of the sensitive element
≈ 0.1mm² / axis
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3-axis M&NEMS accelerometer
Focus on the nano-gauge of the Z-axis
accelerometer
Focus on the nano-gauge of the X-axis
accelerometer
3-axis accelerometer
• Range: 19 g
• Seismic mass 2 ng (240 x 460 µm²)
• Measured Sensitivity
– SdR/R=1.75e-3 / g
– S = 3.5 10-4 V/g (no amplification)
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3D Gyrometer
Typical dimensions of sensitive element:
< 0.5mm² / axis
3D sensor on chip
1 sensitive element / axis (avoid cross
sensitivity)
Differential measurement (drift limitation)
Open-loop detection (no need matched
frequencies - process control is relaxed)
Rough vacuum required (no need for
getter)
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• Gyroscope measurement
– Noise: 0.02 /s/√Hz (limited by electronics)
– Quadratic bias of few 100 /s
= 50°/s
time drift
Measurement calibration
Allan deviation
3D Gyrometer
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3-axis Magnetometer
Working principle :
A permanent magnet layer is deposited on top a moving part
The magnet tends to align along the external magnetic field
The torque induced by the magnetic force is detected by the nano-gauge
Magnetic material = Coupled ferro / anti-ferro magnetic multilayer
Integration of permanent magnet Low power consumption compare to Hall effect or Lorentz force approach
Multi-range sensor (range set by MEMS design)
- R1
+ R2
B
+ R2≈0
+ R1 ≈0 (no lever effect)
Rgauge2 – Rgauge1 B
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Y
X
Z
500µm
3-axis magnetometer
Torsion springs
3-axis Magnetometer
Magnetic layer patterning Nano-gauge
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3-axis Magnetometer
• Magnetometer sensitivity measurement • Correlation between X and Y sensitivity on the
same chip : 99.8%
3-axis measurement
Co-integration Accelero + Magneto
Low power consumption
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M&NEMS platform
M&NEMS Technology
3D
Accelerometer
1st Validation
Q2 / 2010
3D
Gyrometer
1st Validation
Q3 / 2010
3D
Magnetometer
1st Validation
Q4 / 2010
Pressure
sensor
1st Validation
Q4 / 2011
Microphone
1st Validation
Q1 / 2012
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M&NEMS global interests
• 3D accelerometers on chip
• 3D gyroscope on chip
• 3D low consumption magnetometer on chip
• Same process for accelerometer, gyroscope,
magnetometer, pressure sensor and
microphone,…
• CMOS compatible fabrication
• 6 mask levels (without packaging)
• Concepts and technology protected by +12 patents
• Drastic miniaturization of inertial sensor – Target : 2x2 mm² for 3-axis gyro
– Target : 4x4 mm² for 9-axis sensor
• No parasitic sensitive
Can address sensors fusion
1 common analog electronics
for accelero, magneto,
microphone, pressure
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NEMS for chemical sensing
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How do resonant NEMS work ?
• NEMS resonator for ultra sensitive detection
– Frequency shift of the NEMS due added mass….
Mass
loading
Electromechanical features:
– High frequency f0, low mass m , low or strong stiffness k: MHz-GHz
– Low consumption, low energy dissipation: aW-fW)
– Very sensitive to very weak forces (fN-aN) / fields / charges (e-)
– Very sensitive to mass loading (ag – zg)
Ultra sensitive sensors
HF-resonators
Fast sensors
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Why using resonant NEMS ?
40
2l
M
f
m
f
eff
32010 lQ
Mm
DReff
Mass detection below ato gram
(10-18 g) in ambient air
Detection of few molecules
aggregates
~ a few zg (10-21g) to yg (10-24 g)
Sensitivity Resolution
δm
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Technological platform
• Development of generic and mastered process lines – 200 mm
– CMOS compatible / Microelectronic tools
Metal + Si devices
Out of plane displacement
Thermo mechanical actuation
Piezoresistive detection
Full Si devices
In plane motion
Electrostatic actuation
Piezoresistive detection
200 mm wafer of NEMS VLSI More than 3,5 million NEMS
SOI wafer – 160 nm Si top
400 nm BOX
248 nm and 193 nm DUV design
Beam width: 100 to 200 nm width
Integration density ~ 60 000 NEMS/mm²
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“crossbeam” NEMS
Cantilever beam : 3.2 x 0.3 µm2
PZR nanogauges : 400 x 80 nm2
Sensitivity 17 zg/Hz
S2
S1
E O
1 µm
released beam
lateral nanogauges
E. Mile et al, Nanotechnology, 2010
Brownian displacement detected 0.001Å /√Hz
(detection limit)
NEMS Crossbeam concept: provides a very high signal and high SNR
Mass detection below ato gram in ambient air ( m = 10-18 g)
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Application to Gaz analysis: system considerations
Gas Chromatography (GC) is a well-known separation method
Introduction
GC column provides selectivity by separating in time and space the gas mixture components NEMS detectors sequentially detect the elution peaks at the GC output
Both GC column and NEMS detectors can be miniaturized and fabricated with VLSI silicon micro- and nanofabrication techniques.
Injection of the gas mixture
Carrier gas flow
GC column
NEMS chip
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Multi-Gas measurements
Chromatogram measured by a crossbeam NEMS
NEMS is placed behind a 1m long silicon μGC
NEMS reach the same limit of detection, below the ppm level (in dynamic mode)
Calibration with commercial Thermal Conductivity Detector (40x30x20 cm3) with
an optimal column
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Two devices with different Functionalization layers gives added selectivities: 1) PCL: unselective absorbing polymer 2) DKAP: sensitive to phosphonate nerve agents
GC separation + functionalized NEMS array gives increased discrimination ability LoD ~ 200 ppt demonstrated NEMS detect peaks as fast as 8 ms
Application – Multi Gas Analyzer
Mass
loading
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Applications
• Monitoring of industrial processes
• NRBC (National security)
• Air quality monitoring
• Food quality & safety
• Pharma-screening
• Diagnostics (cancer lung …through biomarkers)
Gas card A new born…
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Conclusion
MEMS technologies are now mature with large market acceptance: MEMS are planned to generate a turnover of 16 billions $ in 2015.
NEMS are logically the next step to bring Higher integration
Lower costs
Enhanced performances
New functionalities
But
NEMS cannot simply be scaled down version of MEMS
New concepts are needed Approach differs depending on sensor type
Combination of micron-sized proof mass with nano gauge detection presents many advantages for physical sensors
Nano scale resonators are well suited to extremely small mass or force detection
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Thank you for your attention