Basic Electronic.doc

8/16/2019 Basic Electronic.doc

1/71

BASIC ELECTRONIC

1 Chonan Technical Service Training Center

BASIC

ELECTRONICS

Published byChonan Technical Service Training Center

60

40

20

[mA]

0.2 0.4 0.6 0.8 1.0 Volt

Diode forward directionSpiritual enlightenment point


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BASIC ELECTRONIC



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BASIC ELECTRONIC

FOREOR!

This service-training booklet has been prepared for service technicians of

authorized distributor to familiarize them with vehicle basic electronic. It is our

intention to increase the level of skill and knowledge of service personnel to

enable effective and efficient problem diagnosis and repair.

ecember. 2!!" #rinted in $orea

#ublished b% Chonan Technical Service Training Center

ⓒ cop%right b% $I& 'otors

&ll right reserved.

Chonan Technical Service Training Center

" Chonan Technical Service Training Center


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BASIC ELECTRONIC

http())training.kmc.co.kr

training*kmc.co.kr

+ Chonan Technical Service Training Center


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BASIC ELECTRONIC

CONTENTS

"# $eneral , %# Ther&istor +

'# Co&(ositions)essence o* electricity .1 /TC t%pe +

+# Conductor , nonconductor 0 .2 #TC t%pe +

-# Se&iconductors 11 .# Photoconductive cell +,

+.2 Semiconductor material 12 "/# Pie0o1electric ele&ent +

+." Classification of semiconductor 1" ""# 2all e**ect +0

3# !iode 1, "'# Integrated circuit 1

.1 iode general 1, 12.1 Integrated circuit general 1

.2 iode usage s%mbol representation 1, 12.2 &nalog I.C 2

." iode operation 1 12." igital I.C "

.+.Characteristic of diode 2! 12.+ 3arious logic circuits +

. 4ectification operation of diode 21 "+# 4icroco&(uter 0

. 56ample of diode use in automobile 2" "-# To understand electronic circuit "

., iode check method b% using a m-meter 2 APPEN!O5 ,

6# S(ecial ty(e o* se&iconductor diode 2

.1 7ener diode 2

.2 #hoto diode 2

." 85 98ight emitting diode: 20

7# Transistor "1

,.1 ;hat


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BASIC ELECTRONIC

"# $eneral



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BASIC ELECTRONIC

Toda% in automobile there are essentiall% used application fields of electricit% and electronic beginning

from switch for simple on )off of lamp to man% e@uipments of engine management s%stem 95'S: A

antilock brake s%stem 9&>S: A transmission control s%stem 9TCS: A airbagA instrumentation s%stemAbod% electrical s%stem 9>C':A etc # re@uiring microcomputer control #

>ecause of use of so man% sophisticated electrical e@uipments and electronic partsA there come forth

also man% electronic defects in comparison to traditional mechanical defects as for car trouble

causes. &ccordingl% learn ing the basic knowledge of electricit% and electronic seems e6igent subBect

for automobile maintenance and service.

.

ere it is hoped to become opportunit% to understand basic principle and to learn how the% appl% in

automobileA apart from the complicated structure or an% academic theoretic.

&nd it is hoped to be a little help in more efficient maintenance and trouble repair..

'# Co&(ositions and essence o* electricity

, Chonan Technical Service Training Center


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BASIC ELECTRONIC

5ver% material is composed of molecules each of which is in turn chemicall% composed of aggregates

of atoms.

56ample( water molecule 92D: E two h%drogen atoms 92: F one o6%gen atom 9D:

&s the above figureA electrons are @uickl% turning around nucleus in conformit% with respective

orbits as the earth and planets are turn ing around sun#

Dnl% a certain number of electrons can e6ist in each electron orbit 9$8 2A 88 A '8 1A # # # : while

each element has its characteristic number of electrons 9e #g # h%drogen 1A carbon A o6%gen A

# # # :#

Generall% nucleus has positive electricit% 9F: and electron has negative electricit% 9-: while these

two have mutuall% attractive character so that atom becomes electricall% neutral 9positive electricit%

@uantit% E negative electricit% @uantit%:. >ecause attractive force from atomic nucleus to electrons

of outermost orbit 9valence electrons: is the weakest A these electrons are eas% to escape from orbit

due to e6ternal stimulus 9heat A electricit%A lightA # ## : and ma% move to other orbit A These electronsgot out of orbit are called *ree electrons which are essence of electricit%. 'ovement of these free

electrons directl% becomes electric current . /amel%A it means that movement of these free

electron started signifies that electric current flowsA

+# Conductor , nonconductor


Ato& relationshi( &odel

5lectron

#roton

/eutron &tomicnucleus

$ Drbit

8 Drbit

' Drbit


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BASIC ELECTRONIC

If materials are electricall% classifiedA the% ma% be divided into conductor which transmit electricit%

wellA nonconductor which do not transmit electricit% and semiconductors in middle between the two

while these characteristics are determined b% electronic configuration according to atomic structure ofmaterial#

1: Conductor 8 where electricit% flows well

ere fall most metals where free electrons ma% well move in the interior of material # Drder of

good conductance of electricit% 8 silver copper gold aluminium tungsten zinc

nickel....

2: /onconductor 8 where electricit% does not flow well

It is called insulator where free electron is not easil% generated e #g # ceramicsA glassA rubberA

plasticsA wood etc #

": Semiconductor 8 which has medial characteristics between conductor and nonconductor

ere fall silicon 9Si:A germanium 9Ge:A selenium 9Se: etc # which are used as raw material of

electronic part.

∗ &s for automobile wiringA multistrand t%pe is contained inside a clothing of cord where copper

9allo%: is mainl% used as stuff material# Cord thickness is determined b% electric current valueA

loadA continuit%A temperature etc # The larger the electric current 9 the longer the cord and the

longer the electric current flow timeA the thicker the electric cord shall be #

General Specification Table

&rea

9mm :

Strand

iameter

/o. of

Strands

5lectric

;ire D

&llowable

Current

9&:

!. !."2 , 2.2 0

!. !."2 11 2.+ 12

1.2 !."2 1 2., 1

2 !."2 2 ".1 2!

" !."2 +1 ". 2,

!."2 +. ",

!.+ ! . +,

1 !.+ + ,.! 0

2! !. +1 .2 +


!."2 mm

2.2 mm

!. s@ 9&llowableelectric current E 0 &:


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BASIC ELECTRONIC

1! Chonan Technical Service Training Center

4E4O


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BASIC ELECTRONIC

Semiconductors pla% role of conductor or nonconductor according to specific condition 9relationship

between voltageA electric current 9 temperature etc # :# The main elements that are most fre@uentl%

used are silicon 9Si: and germanium 9Ge: while such conductor of high purit% is called as intrinsic

semiconductor. Silicon and germanium respectivel% have four electrons on outermost orbit#

/amel% in their respective cr%stal structuresA the form becomes that each atom shares its own four

electrons with its partner atom. >ecause of such covalent bondA the material becomes an electric

insulator and has little electrical utilization value so that it cannot independentl% be used as

semiconductor. Therefore it is used as a form of impurit% semiconductor b% adding small

proportional @uantit% of other element atoms to these intrinsic atoms of valence +.

-#+ Classi*ication o* se&iconductor

Semiconductor is largel% constituted of two forms.

ere are iintrinsic semiconductor that does not utterl% contain impurit% in material cr%stal and

impurit% semiconductor that is added of specific impurit% material into intrinsic semiconductor in

order to improve conductivit%.

Generall% diode and transistor belong to this impurit% semiconductor.

&nd this impurit% semiconductor is also classified into two according to role of added impurit%

material #

4oles of impurit% material are to increase in semiconductor the number of

- Increase free electron of semiconductor inside

- Increase hole of semiconductor inside

Therefore among impurit% semiconductorsA that added of impurit% to increase the number of free

electron are called negative t%pe semiconductor while that added of impurit% to increase the number of hole are called positive t%pe semiconductor #

1" Chonan Technical Service Training Center

S

i

S

i

S

iS

i

S

i

Duter block Drbit

Si

JSilicon atomic structureK


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BASIC ELECTRONIC

2: / T%pe semiconductor

This is made b% adding the material 9#8 phosphorus ; &s8 arsenic; Sb 8 antimon%: having five

outermost la%er electron in intrinsic semiconductor # If element of valence is added to bind with

silicon then one electron remains as surplus in octet so that electric conduction ma% be accomplished

easier b% means of free activit% of this remainder electron.

&nd it is called / 9negative: t%pe semiconductor because it assumes negative 9-: electricit%.

5lectric current flows b% means of electron in / t%pe semiconductor 9carrier 8 electron: #

": #-/ ?unction

If # t%pe semiconductor and / t%pe semiconductor are chemicall% bonded with each otherA there is

made portion where carrier does not e6ist as hole and free electron are bonded together at narrowpart of Bunction surface. This Bunction surface is called depletion la%er while semiconductor bonded

thus is called #/ Bunction semiconductor or diode. &ccordingl% there e6ists electric charge of

different polarit% from each other on either side of depletion la%er and there is generated a little

amount of electric potential difference which is called electric potential barrier.


# /

Depletion layerole

!lectron

Superfluit% electron

Structure of N/O t%pe semiconductor


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4E4O


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BASIC ELECTRONIC

8amp turns on because diode has been connected in forward direction in circuit below.

.2.2 >ackward diode for reverse bias

This time let us in reverse direction appl% negative 9-: voltage at # t%pe semiconductor and positive 9F:

voltage at / t%pe semiconductor. Then hole of # t%pe semiconductor is attracted to negative 9-: side

of electric suppl% while electron of / t%pe semiconductor is attracted to positive 9F: side of electric

suppl%. Conse@uentl% electric potential barrier is heightened and accordingl% depletion la%er is also

widened so that electron movement cannot arise between the two kinds of semiconductor.

&s the result9 electric current does not flow

Bac?>ard direction circuit o* diode

8amp turns off because diode has been connected in backward direction in circuit below.


&attery

&node9＋

: Cathode9－

:

8amp D/

&attery

Cathode9－: &node9＋:

8amp Dff


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BASIC ELECTRONIC

3#3 Recti*ication o(erating o* diode

&n alternating current signal ma% be rectified to a direct current b% using characteristic of electric

current in diode to flow alwa%s in onl% one direction. 4ectifier circuit ma% largel% be classified into

half wave rectifier circuit and full wave rectifier circuit #

.. 1 alf -wave rectifier circuit

;hen appl%ing an alternating current to the circuit 9 at moment when positive 9F: side signal comes

inA electric current flows in forward directionA but at moment when negative 9-: side signal comes inA

electric current does not flow because it becomes the reverse direction. This kind of circuit to flow

electric current for onl% one side is called half wave rectifier circuit #


)orward direction voltage characteri#tic of #ilicon *unction diode

Time

Time3olt

3olt

Input voltage

Dutput voltage

&.C

.C

iode

Input

3oltage &.C 3

4E .C4

I4

Dutput

3oltage

2al* 1>ave recti*ier


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BASIC ELECTRONIC

3#6 Ea&(le o* diode use in auto&obile

+ &lternator rectifier

&C voltage generated at stator coil is transformed to C voltage across the diode

3oltage of A8 C 1"., volts

3oltage of B8 &C #ick-to-#ick voltage 1"., volts U 2 E 2,.+ volts

&C voltage of #ick-to-#ick voltage of > is outputted onl% in F voltage after passing the diode so that

onl% 1)2 voltage of 2,.+ 3 is outputted.

/amel% &C voltage after passing the forward diode is outputted in accordance with vanishing of V

voltage.

2" Chonan Technical Service Training Center

B

A

Alternator internal circuit

,o &attery )rom fu#ible lin' )rom charging lamp


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BASIC ELECTRONIC

+ iode installed in rela% to prevent surge voltage

"= If power transistor of controller turns onA then the rela% turns on #

'= 'otor operates as the rela% turns on #

+= ;hen power transistor turns off in controllerA a high surge voltage about !volts

is instantaneousl% generated between & and > according to 8enz law so that it becomes

F voltage.

-= If this surge voltage of ! volts flows in the controllerA the controller ma% be damaged#

3= In order to prevent this problem 9 diode is installed in the rela% so that the surge voltage

generated between &R> shall digress in direction from & to C across diode to be

e6tinguished for controller damage prevention #

2+ Chonan Technical Service Training Center

'

-elay

%ontrollerㄱ

.otor

&attery

A

A

&

%


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BASIC ELECTRONIC

+ iode connection in forward direction and reverse direction in electric circuit

For>ard bias direction connection

Bac?>ard bias direction connection

5.7 Diode chec? &ethod by using a &ulti1&eter

If we had understood that diode is #/ Bunction semiconductor where electric current would flow in

case of forward direction but would not flow in case of backward directionA we can Budge it whether

good or bad in accordance with the following.

.,. 1 ow to check b% using a igital 'ulti-'eter

1: Select resistance or diode mode for the select switch of digital meter.

2: It is normal if resistance value is small when red lead wire has been connected to diode anode

9F: and black lead has been connected to cathode 9-:.

": &nd it will be rather good if resistance value is higher when connected inversel%.

/ Short condition 8 normal if value is near ! ohm when measuring in forward direction and

backward direction #

0 Dpen condition 8 normal if value is near infinit% ohm when measuring in forward direction

and backward direction #

hen chec?ing by using digital &ulti &eter Nor&al condition


&attery

&node9＋: Cathode9－:

8amp D/

&attery


8amp Dff

+ - - +

4esistance 1 2 34esistance 1 4 5 3

F －

4ed

lead

wire

>lack

lead

wire

4ed

lead

wire

>lack

lead

wire

0 Ω ∞ Ω

&nodeCathode &node Cathode


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BASIC ELECTRONIC

Mollowing is a brief description of some diode t%pe %ou might encounter.

6#" ener diode 1: 7ener diode s%mbol

2: 7ener diode characteristic

;hen the diode is forward biasedA it acts like reverse diode or a closed switch.

oweverA the zener diode has uni@ue reverse bias @ualities that make differ from the t%pical diode.

The zener diode goes in to reverse bias at various voltages. The amount of voltage re@uired for

reverse bias varies according to the zener diode selected.

Some t%pical reverse bias voltages are 2.+3A .13A .!3A 0.13A 12.!3A ect.

&t this pointA when the applied voltage increasedA the forward current increase.

This small reverse current flows until the diode reaches the zener breakdown pointA 32 in figure.

&t zener breakdown pointA the zener diode is able to maintain a fair% constant voltage as the

current varies over a certain range.

>ecause of this attributeA the diode provides e6cellent voltage regulation.

2, Chonan Technical Service Training Center

3oltageremainsconstanceover largecurrent

range

Morward bias

4everse bias

－

＋

＋

Current

V9 3oltage5

7ener

breakdown region

7ener diode characteristic



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BASIC ELECTRONIC

": 7ener diode usage

&n electronic device that can be used as a voltage regulator is the zener diode.

+: 56ample of circuit that use zener diode

- 7ener diode breakdown voltage of circuit below is 12 3.

- Suppl% voltage to controller through C1 in circuit diagram below shall never e6ceed 12 3.

- If suppl% voltage e6ceeds 12 3 then it is earthed through zener diode.

SoA because current is e6tinguished through earth for voltage above 12 3olts an% voltage above

12 3olts is not supplied to controller.

6#' Photo diode

1: #hoto diode s%mbol


7 123oltsCondenser

41

42

4"

4+ Controller

Suppl%3oltage

T4

5arth

5arth

C1



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BASIC ELECTRONIC

2: #hoto diode characteristic

5lectric current flows if lighted on #/ Bunction surface under condition where certain voltage is

applied in backward direction. &nd if light irradiation dose is changedA electric current changes in

proportion to the light @uantit%. 5lectric potential barrier is made on #/ Bunction surface and

becomes greater if reverse voltage is applied so as to become a complete insulator. If light is

shed on #/ Bunction surface under this conditionA change arises on the Bunction surface.

4espectivel% electron and hole are activated b% e6ternal light energ% along with positive 9F: ion in

/ side area and negative 9-: ion in # side area # ole and free electron separated from respective

ions move along so that electric current gets to flow. Thus diode is used in light electricit%

transformation circuit #

;hence if voltage is maintained constant9 electric current flowing in circuit gets proportional to the

light @uantit% received b% element #

": 56ample of circuit that use photo diode

- #hoto diode has been connected in backward direction in circuit below.

- If light irradiates on photo diodeA then because batter% voltage is suppliedA the lamp turns on #

- It is much used as a switching circuit #

6#+ LE! atter% 12 volts 8amp

#hoto diode circuit


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BASIC ELECTRONIC

2: 8ight emitting diode characteristic

This diode is that which illuminates as electric current flows b% appl%ing forward voltage at #/

Bunction diode. Its characteristics are as follows8

- It has longer life and electric power consumption is smaller in comparison to incandescent

electric lamp.

- 4esponse is speed%.

- It illuminates even with low voltage of 2R" 3.

- #ower consumption is small 9about !.! ; : A

- 4esponse of turning on and off is @uick 9b% unit of millionth second:.

- &s for illumination colorA there are redA greenA %ellow etc. according to semiconductor material.

": 56ample of circuit that use zener diode

- If switch is closed in circuit belowA then electric current flows so that 85 illuminates.

- &s for role of resistanceA it was used for voltage drop to appl% a voltage of " 3 at 85.

+: Trip computer displa% using a 85

"! Chonan Technical Service Training Center


#hoto diode circuit

>atter%

0 3olts. " 3olts

Switch

85


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BASIC ELECTRONIC

7# Transistor

7#" hatDs transistor?

#/# t%pe transistor is that where thin / t%pe semiconductor in a semiconductor cr%stal has been

inserted between two # t%pe semiconductors while /#/ t%pe transistor is that where thin # t%pe

semiconductor has been inserted between two / t%pe semiconductors. Mor s%mbols in

semiconductorA 5 denotes emitter terminalA > denotes base terminal and C denotes collector terminal

Each Part Sy&bol and Sorts o* Transistor

,ran#i#tor according to a##ociation of #emiconductor: there are ;(; type and (;( type7

"1 Chonan Technical Service Training Center


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BASIC ELECTRONIC

And: tran#i#tor according to u#age and type: following name i# attached7

9SA ===== )or high freuency tran#i#tor of ;(; type

9S& ===== )or low freuency tran#i#tor of ;(; type9S% ===== )or high freuency tran#i#tor of (;( type

9SD ===== )or low freuency tran#i#tor of (;( type


#

T%pe

/ t%pe

PNP type transitter structure ! sy"ol

Collector9C: #

T%pe

5mitter95:

>ase 9>:

Collector9C:

5mitter95:

>ase 9>:

Collector9C:

5mitter95:

>ase 9>:

/T%pe

# t%pe

NPN type transitter structure ! sy"ol

/T%pe

>ase 9>:

5mitter95:

Collector9C:

D# )or low freuencytran#i#tor of (;( type


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7#' Basic o(eration o* transistor 8797? >asic operation of /#/ t%pe transistor

This t%pe has been connected in opposite case to #/# t%peW but in this /#/ t%peA as shown in

figure belowA a few holes are supplied from positive pole of electric source so that these make a

small portion current of base current I>. &nd electrons that come from emitter as not having been

able to Boin with base holes move to collector side owing to 3 C> of collector side so that these make

collector current IC. Drdinaril% 0R0 L among emitter current I5 becomes IC but remainder 2R L

becomes I>.

,.2.2 >asic operation of #/# t%pe transistor

If forward voltage 3>5 is applied between emitter and baseA electric potential barrier in between #/

Bunction surface becomes low. &nd at # t%pe side of emitter sideA man% holes are being generated

because impurit% material concentration has been heightenedA &nd as for base / sideA because this is

ver% thin so that impurit% material concentration becomes lowerA there are onl% few electrons.

&ccordingl% holes in emitter cross over the electric potential barrier and enter the base side b%

diffusion so as to vanish b% bonding with a part of base electrons there. >ut because these few

electrons are continuousl% supplied b% negative N-N pole of electric sourceA these make the small base

current I>.

If backward voltage 3C> is applied between base and collectorA electric potential barrier is heightened

at #/ Bunction surface so that electric current does not flow between base and collector.

oles that could not Boin with base electrons but come from emitter now move to collector side owing

to 3C> of collector side. These make collector current IC . 5mitter holes are graduall% supplied from

"" Chonan Technical Service Training Center

Current Ib

5mitter95:

>ase9>:

3be

/#/ t%pe

3cb

Current Ic

Collector9C:

)orward bia# of (;( type tran#mitter#5mitterXs electron most moves b% collector

IbYu&Z

Ic Ym&Z


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BASIC ELECTRONIC

positive pole so that these make emitter current Ic. &ccordingl% most I5 becomes IC but ver% little

portion becomes base current I>.

,.2." &mplification function of transistor

&s we have alread% discussed above in [>asic DperationXA most electron 9no less than 0 L: move to

collector but onl% a few electrons 9no more than L: Boin with base hole. So as electron current and

electric current direction are ordinaril% defined oppositel% while emitter current E I is divided into

collector current C I and base current B I A the following e@uation holds8

I5 E I> F IC C B E I I I +=

8ike thisA big collector current ma% be deduced from small base current so as to be called electric

current amplification while relationship 9ratio: between B

I and C I are called electric current

amplification factor 9hM 5:.

Mor calculation e6ampleA if B

I is 1 m& and C I is 1!! m& then h M5 is 1!!. /amel% it means

transistor that can amplif% input signal b% hundred times. 9T 5lectric current amplification rate of

transistor varies according to usageA sort etc #:

B

C

I

I hFE = A 100

1

100==

'eanwhile in how to use transistorA there are three earth methods of emitter earthA base earth and

collector earth among which the emitter earth method as in circuit above is most used.

.

"+ Chonan Technical Service Training Center

IcE1!!m&

IbE1m&

>

5

ChM5E1!!

Input9IbEu&:

Dutput9IcEm&:

>

5

C

Input

Dutput


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BASIC ELECTRONIC

&nd generall% amplification means that of alternating current component 9 which we shall deliberate in

the following e6ample 8

In circuit shown in figure hereA if &C signal is applied between base and emitterA base current B

I

flows onl% when it is in forward direction 9same as in diode:. ;hence collector current C I also

appears as output while being amplified onl% of half wave. /amel% transistor does not operate during

negative 9-: half c%cle because here it is in backward direction between base and emitter.

ere let us appl% C between base and emitter. If &C is applied onto CA &C component is added

upon C so as to appear like what is shown in the following figure.

3oltage at this time is called bias voltage. /ow for the first time we can see completel% amplified

output waveform. &lso we ma% obtain the amplified &C waveform onl% if we remove C component b%

connecting a condenser at output terminal.


Input9IbEu&:

>

5

C

Input

Dutput

>ias voltage

Dutput9IcEm&:


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BASIC ELECTRONIC

Pnder condition as aboveA output voltage to the base input waveform shows up reversel% as ma% be

seen in figure. It is e6plained as total voltage 5 E voltage drop between collector and emitter 95o: F

voltage drop due to resistance 4 9Ic U 4:. /amel%A if electric current Ic increasesA voltage drop due

to resistance 4 also increases so that the output voltage 5o decreases. 9Dutput voltage 5o E 5 V 9Ic

U 4::

/ow let us learn base earth and collector earth methods along with transistor Xs switching action.

Base earth circuit

'ethod of base earth is t%pe of circuit as shown in figure to take base as earth and appl% input signal

to emitter.

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>

5C

Input

Dutput

J>ase earth circuit


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BASIC ELECTRONIC

If there is no electric potential difference between emitter and baseA emitter current does not flow as

well as their flows no electric current at collector where voltage is applied in backward direction

through resistance. If forward voltage is applied between emitter and base as in circuit shown b%

figureA collector current ma% also flow through resistance.

In this caseA because sum of base current and collector current is e@ual to emitter current 9 ratio of

collector current to emitter current is below 1 so that electric current is not amplified.

In case of voltage amplificationA if we suppose for e6ample that 1!m& flows in emitterA then some

1m& and 0m& flows in base and collector respectivel% so that voltage drop occursA through

resistanceA in collector that is the output #

&ccordingl% it becomes 0m& U resistance Yk\Z E output voltage so there is accomplished voltage

amplification to the input signal #

Collector earth circuit

'ethod of collector earth is t%pe of circuit as shown in figure to take collector as earth 9 send input

signal to base and send output from emitter.In emitter earth circuit 9 collector current greatl% varies according to base current while variation of

value of load resistance connected to collector does not give large effect to electric current # >ut in

collector earth circuit 9 because forward voltage is applied between emitter and base for output circuit 9

emitter current 9from collector to emitter: flows so as to be applied at load resistance as it is #

&ccordingl% emitter current is controlled b% small base current as well as emitter current varies directl%

also b% load resistance variation #

&s aboveA we learned three t%pes of earth methods according to terminals used in common # &mong



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BASIC ELECTRONIC

them the most general and usuall% used method is emitter earth method whereas to summarize it

ma% be e6plained b% the following characteristics table.

.Characteristic o* earth &ethods

Ite& E&itter Earth

Circuit

Base Earth Circuit Collector Earth

Circuit

5lectric current

amplification degree

igh 8ow 'id

3oltage amplification igh 'id 8ow

5lectric power amplification igh 'id 8ow

Input impedance 'id 8ow igh

Dutput impedance 'id igh 8ow

#hase of output to input &ntiphase Inphase Inphase

igh fre@uenc%

characteristics

>ad >est Good

To understand a&(li*ication circuit that use trans&itter


41E1㏀

123 2" 9/#/ T4:

1R1!!H

variable resistor

>ase

5mitter

Collector '

'otor


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BASIC ELECTRONIC

Circuit descri(tion

- The 41Xs resistance changes /#/ transistor base and bias that is approved to emitter voltage to "

volts. There is serving resistance

- 3ariable resistor is thing to control /#/ transistorXs bias voltage b% ! R " volt

- That isA become transistorXs base and emitter bias voltage high if variable resistance value is highA

and resistance value two. If is lowA bias voltage becomes low

- Therefore flowing electric current is passed much to collector and emitter according to bias voltage

- ThereforeA can control turning number of motor according to position of variableness resistance

passing as motorXs electric current b% bias voltage differs.

C B E I I I += B

C

I

I hFE =

hM5(The electric current amplification rateA

I>(>ase currentA

Ic(Collector current:

,.2." Switching function of transmitter

In e6planation of amplification actionA we learned that if to electrif% between emitter and collectorA itwould do making the base current Ib to flow. /amel% it will do if we suppl% base current up to

saturation state where collector current will not almost increase an% more. 9/evertheless in small

signal amplification circuit or ordinar% home appliancesA usuall% use is made of amplification action

not in saturation region but in active area # : ;e can turn on ) off circuit between emitter and collector

b% on ) offing the base current Ib under this condition# This is called transistor Xs switching action

among transistorXs amplification action..

;e can make role like of rela% if using transistor Xs switching action as shown in figure.

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Transistor Xs base current corresponds to rela% Xs e6citation current so that transistor ma% act as the

rela% while not using mechanical contact as in rela% Xs contact point# &nd if load increases then

electric current Ic also increasesA whereasA when we cannot suppl% sufficient electric current b% a

transistorA we can make use of electric current amplification b% means of connecting transistors in

multistage in accordance to load capacit%.

So transistor Xs switching action has the following advantages to the rela%.

- Switching speed is fast 9more than thousand times per second:.

- Dperation is stable and there is no chattering when on ) offing the contact point as that in rela%

because there is no mechanical contact # It is small t%pe with less electric power consumption#

It has longer life than mechanical rela%.

To understand transistor s>itching circuit

?7 In below circuit: when ignition 'ey #witch doe# "(: power i# #upplied to the ignition coil7

97 If #upply power to power ,- &a#e from !%. through ;in (o9@ ignition coil of electric

current pa##e# by ground ??7

@7 Again !%. tran#mitterB# ba#e power when coilB# electric current i# #hut off becau#e

connection between collector and emitter become# open if do "ff in coil high ten#ion

generate become7

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>attD/)DMM input signal

8oad

Switching rela%

>5

C

Current

Ic

>att

D/)DMM

Input signal 8oad

Switching transmitter

Mrom ignition ke% switch

Pin No '+

$round $""


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7#+ Gudg&ent o* good) b ad transistor

&s ma% be seen in figureA it will be fine if we think transistor to have been connected with part of

emitter and base considered as a #/ Bunction diode and part of base and collector considered as

another diode..


>ase>ase

Collector 5mitter

/#/ Transmitter >ase

5mitter Collector


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1. ;hen multi-meter measures between >R5 and >RC in forward direction under normal conditionA

it is electrified 9 showing ordinaril% some hundred m3 in case of digital meter but a low resistance

value in case of analog t%pe meter:. Inversel% when measured in reverse directionA it is not

electrified so that there is little change in indication value of multi-meter 9b% which there is

displa%ed a voltage same as for case when measuring rod was not connected in case of digital

meter while there is displa%ed an appro6imatel% infinite resistance value is displa%ed in case of

analog meter:.

2. /e6t if also measured for interval of 5RC forwardl% and backwardl% with the measuring rodA there

is little change in indication value of multi-meter for both of the reciprocal cases because it is not

electrified for both cases. ;hereas in some cases according to transistor sort and characteristic

when red 9F: rod is connected to collector and black 9-: rod is connected to emitter 9in case of

/#/A but reversibl% in case of #/#:A @uite a high resistance value ma% be displa%ed even though

it would not be infinite 9so namel% a little current ma% flow:.

Mor reference to sa%A when testing transistor or diodeA if measuring under condition where it has been

connected to circuit 9 it ma% be affected b% connected circuit resistance valueA it is desirable to

measure under condition isolated from circuitr%. &nd in case where generall% transistor or diode has

been broken 9 it is displa%ed as primaril% short circuit form #

Polarity distinction o* transistor

1. In case of using analog multi-meter.

1: ;ut mode #witch in Analog multi meter at -?55 or -?555 with in mea#urable range7

2: )ir#t connect a lead wire to any pin in tran#i#tor7 ,hen connect left 9 terminal# in tran#i#tor

re#pectively: u#ing other lead wire7

": At thi# moment: if the direction become# %C: which re#i#tance mea#uring become# nearly

"3: blac' lead wire connection become# ba#e line in (;( tran#mitter and red lead wire

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BASIC ELECTRONIC

connection become# ba#e line in ;(; tran#mitter7

+: If you #et mode #witch in -?555 at circuit te#ter: re#ult in %C direction after mea#uring other

two pin# re#i#tance re#pectively: red lead wire connection become# collector in (;( andblac' lead wire become# collector in ;(;7

2. In case of find polarit% to use transistorXs lead wire.

;hen saw flat side that printed of part name.

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4ulti 4eter 4ulti 4eter

>ase

1 2"

1 ( Collector 2 ( 5mitter

" ( >ase

In case of 2SC11 transistor 9/#/ t%pe transistor forhigh fre@uenc%: - 4ight side lead ( >ase - Center side lead ( Collector - 8eft side lead ( 5mitter

5mitter >ase

Collector

>ase

Collector

5mitter

In case of 2S! transistor 9/#/ t%pe transistor for highfre@uenc%: - 4ight side lead ( 5mitter - Center side lead ( Collector - 8eft side lead ( >ase


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%# Ther&istor



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To semiconductor element that use change of resistance according to temperatureA there are /TC

thermistor and #TC thermistor %#" NTC


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%#' PTC


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- Characteristic

4esistance decreases if brightness of light is strongA and there is Characteristic that resistance

increases if light becomes feeble

- Psage in car

&uto light sensorA M&TC air conditioning s%stem

- To understand circuit that use CS

1: If transmitter1 does D/A lamp turned D/.

2: Mor T41 does D/A T42 must do D/

": T42Xs D/ operates according to cdsXs resistance value+: If receive a lot of raises in CSA T42 does D/ because T42Xs bias voltage rises

: If @uantit% of light decreasesA T42Xs bias voltage decreasesA because cdsXs resistance

increases lamp Dff


41E1!㏀

4+E+.,㏀

42E+.,㏀

4"E1㏀cds

8amp

/#/ T41

2SC",2

12 volts>&TT.

/#/ T422SC",2

Circuit that use #hotoconductive cell

1 10 100 1,000 EuF

KΩ

10,000

1,000

100

10

1


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"/# Pie0o1electric ele&ent

If receive pressureA if electromotive force happenA and supplies voltageA there is special @ualit% that

cause transformation

- 'aterial ( Titan acidA >arium

- Psage in car ( $nock Sensor

- $nock sensor waveform

""# 2all e**ect


a. C%linder #ressure Signalb. Miltered C%linder #ressure Signal

c. $nock Sensor Signal

Hnoc? sensor


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;hen %ou put hall IC in magnetic field at concentric position with current flowingA both hall IC end can

produce some voltage.

In the following pictureA if %ou put an% conduct in magnetic field and make some current flow throughthisA &1 and &2 can produce some voltage out.

If %ou simulate the magnetic field then the output voltage between &1 and &2 becomes on and off.

;hen tone wheel destro% the magnetic filed the output voltage between &1 and &2 in the following

pictureA becomes on. ;hen this tone wheel reaches without an% damage to the magnetic field the

output voltage becomes off

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A"

A'

Iv

Current IJ


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- Psage in car

C'# sensorA C$# sensorA Speed sensor ect.

- Signal waveform


,ime

Volt

2all IC ty(e C4P sensor


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"'# Integrated Circuit


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Meatures of I.C.○ Size reduced to minimum b% integration

○ igh reliabilit% thanks to integrated structure

○ 8ow price thanks to volume production

○ 8ow power consumption

"'#' Analog I#C

The IC shown here is one called comparator.

NaO is the power suppl% terminal and NbO is the ground terminalA both are re@uired to suppl% power to

the comparator for its operation but are not directl% associated with the operation itself.

The comparator compares the potential at terminal c and terminal d and in this operating conditions

shownA it gives output vaYvZ at point e onl% when the potential at point c is higher than the potential at

point d.

Df the two input terminal voltagesA one that remains constant is called the reference voltage and one

that changes is called the comparison voltage which of the two input terminals has the reference

voltage can be known from the circuit connected to the comparator.


＋+

c

d

－

＋

c

A GVaH

b GVbH

VcVd

"perating condition#"utputGVa voltH i# made when Vc＜Vd"utputGVa voltH i# not made when VcVd


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"'#+ !igital I#C

8ogic circuit

In a digital circuitA two signals are usedA that isA signal with high voltage 9: and signal with low

voltage 98: or presence of signal and absence of signal.

&nd as a conventionA these two signals are represented b% N1O and N!O.

Mor e6ampleA when the transistor is off in this figureA 3ce is 123 and this state of voltage is taken as

N1O.

;hen the switch is set to D/ to turn on the transistorA 3C5 becomes !3 and this state is taken as

N!O.

In a digital circuit unlike an analog oneA various information is e6pressed b% combination of onl% two

signals that can have onl% two statesA namel%A N1O or N!O.

& logic circuit is a circuit that gives an output N1O or N!O when input signal that is combination of N1O

and N!O is applied.


3ce

Switch

12 volts

>atter%

D/

12 volts

! volts

3ce DMM DMM DMM

D/ D/ T4


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"'#- @arious logic circuits

12.+.1 &/ circuit 9logical product:

&nd operation is the operation that gives a result onl% when all conditions are met such as Nthe

brake warning lamp lights up when the ignition switch is D/ and the parking brake switch is D/O.

/amel%A the &/ circuit is a circuit of which output signal becomes N1O when the input signals are

all N1O.

4epresentation &ctual Circuit 8ogic S%mbol Input)Dutput relation

& > C

1 1

1 !

! 1

! !

1

!

!

!

This figure shows an e6ample of &/ circuit using transistors. ;hen both input signals & and >are 19:A 19: voltage is obtained at output C.

Mor output C to be highA it is necessar% that both Tr 2 be off and for these two transistors to be offA

it is necessar% that Tr 1 and Tr 2 be on. &nd for Tr 1 and Tr 2 to go onA high 9: voltage must be

applied to inputs & and > so that base current ma% flow to both transistors.



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12.+.2 D4 circuit 9logical sum:

D4 operation is the operation that gives a result when at least one condition among various

conditions is met such as Nwhen an% one door is openedA the door aBar indicator lamp lights upO

/amel%A the D4 circuit is a circuit whose output becomes N1O when at least one input signal is N1O.

In contrast to the &/ circuit whose output is N1O when all inputs are N1OA the D4 circuit ma% be

considered as a circuit whose output is N!O when all inputs are N!O.


& > C

1 1

1 !

! 1

! !

1

1

1

!

This figure shows an e6ample of D4 circuit using transistors.

;hen either input & or input > is N1O output C becomes N1O.



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12.+." /DT Circuit 9negation:

The /DT circuit is a circuit whose output is inverse of the inputA such as when the input signal is

N1OA the output signal is N!O or vice versa.

Mor this reasonA the /DT circuit is sometimes called an inverter.


& > C

1 1

1 !

! 1

! !

1

1

1

!

/ote ( The relationship between transistor base voltage 93>5: and collector voltage 93C5: is /DT

relation.

/amel%A when the base voltage is highA the transistor goes on and hence the collector voltage

becomes low. Dn the other handA when the base voltage is lowA the transistor goes off and

hence the collector voltage is high.



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12.+.+ /&/ and /D4 circuits

The /&/ circuit is an &/ circuit followed b% a /DT circuit and for this reasonA it is called

/&/ 9meaning /DT F &/:

8ogic S%mbol Input)Dutput relation

Input Dutput

& > ]

8

8

8

8

8

12.+. The /D4 circuit is an D4 circuit following b% a /DT circuit#

In either circuitA the output is the inverse of the &/ or D4 circuit.

8ogic S%mbol Input)Dutput relation

Input Dutput

& > ]

8

8

8

8

8

8

8



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"+# 4icroco&(uter

The microcomputer is a kind of computer. 8et


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sensor signal and the result of calculation b% the C#P is output from this I)D as the fuel inBection

amount control signal.

"+#+ 4e&ory

The memor% stores the program 9set of directions for operationA BudgmentA data e6changeA etc.:A

data 9reference voltage for 5CP air)fuel ratio comparisonA for instance: and signals that are input

while the C#P is bus% with calculation processing.

The memor% is generall% classified into the following two t%pes.

"+#- RO4


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microcomputer. The microcomputers used in a car mostl% belong to the latter categor%.

"+#% Basic o(eration o* &icroco&(uter

The basic internal operation of a microcomputer is addition and subtraction of binar% numbers

and the internal circuits are basicall% logic circuits. /amel%A the microcomputer is essentiall%

digital IC and its internal circuit can be represented b% logical s%mbols. The internal circuits of a

microcomputer for automotive application are complicated but the% are relativel% eas% to

understand if %ou have basic knowledge of logic circuits.

/ote ( >inar% number

The numbers ! through 0 we use in our dail% life are decimal numbers. >inar% numbersA on the

other handA consist of onl% two numbers of ! and 1. These two numbers correspondA as %ou will

be awareA to the two signals of a logic circuit. In other wordsA a microcomputer is a digital IC that

processes binar% data b% its logic circuit.



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"+#. 4icroco&(uter in a syste&

1.0.1 Pse as a controller

In a s%stem formed b% transistorA ICA 8SI and other individual partsA a microcomputer isintroduced as a controller. T%pical e6amples are T3 and radio sets and other household electric

and electronic appliances.

1.0.2 Pse as a computer

&pplication with emphasis placed on its calculation function.

#ersonal computers and word processor belong to this categor%.

1.0." Combined use as controller and computer

Pse of a microcomputer not for simple control of machineA but for optimum control.

/amel%A the microcomputer Budges conditions that are constantl% changing and controls the

machine ade@uatel%. 'icrocomputers used in a car belong to this categor%.

1.0.+ 56ample of application

&s an e6ample of practical application of microcomputers to carsA the computer unit for 5C'

will be descried.

This computer unit of 5C' computers the optimum fuel suppl% rate to the engineA etc. with its

microcomputer.

Signals from various sensors are input via the I)D unit and calculated b% the C#P according to

the program stored in 4D'.

In memor% 94&':A data and calculation results are stored temporaril% as necessar%.



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"-# To understand electronic circuit

Blo>er &otor s(eed control circuit


41

1 ㏀

>atter%12volts

T42"

34

1R1!!H

>

5

C

'

>lower 'otor

I>

IC

E A ( l a i n

( r o c e s s t h

a t b l o >

e r & o t o

r s s ( e

e d i s c

o n t r o l l

e d a c c

o r d i n g

t o v a l u

e o * @ R


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Roo& la&( delay control circuit

T4 2

+,1

T4 1

&1!1

123olts

>atter%

4oom 8amp123olts)1.2;

4 1

""!H

Condenser

""㎌)23olts

oor Switch

iode 1

1!1

4 2

1㏀iode 2

1!1

4 1

1!㏀

C

>

5

C

>

5

E A ( l a i n ( r o

c e s s t h

a t r o o &

l a & ( o ( e r a t e s a c

c o r d i n g t o

O N ) O F

F o * d o

o r s > i t c h i n a

b o v e c i

r c u i t#


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Auto lighting circuit

4"1!㏀

4++.,㏀

4 1+.,㏀

4 2

1㏀cds

85

T4 1

2SC",2

T4 2

2SC",2

>atter%3

C

>

5

C

>

5

E A ( l a i n (

r o c e s s

t h a t L E

! l a & (

o ( e r a t e s

i n a b o

v e c i r c u

i t d i a g r a &

#


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4E4O


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APPEN!I5



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5lectric unit s%mbols

uantit% Pnit Pnit S%mbol

Current &mpere &

3oltage 3olt 3

5lectric 4esistance Dhm H

Conductivit% 'ho

uantit% of electricit% Coulomb C

&mpere-hour &h

5lectric power ;att ;

;ork of electricit% ?oule ?

;att-hour ;h



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Static capacitance Marad M

5lectromagnetic induction

Coefficient

e

'agnetic flu6 ;eber ;b

'agnetic field intensit% &mpere-turn &T)m

'agnetic force 'eter

'agneto motive force &mpere-turn &T

Mre@uenc% ertz z

Sound level #hon #

&ttenuation or gain ecibel d>

'ultiplier fraction #refi6 S%mbol

1!

'ega or 'eg '

1!" $ilo $

1!-1 eci d

1!-2 Centi c.

1!-" 'ili 'm

1!- 'icro

1!-0 /ano n.

1!-12 #ico or 'icro p.

#45MI^ S]'>D8 458&TID/ TD 5^&'#85

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BASIC ELECTRONIC

>&SIC P/IT

'5G&

$I8D

'I88I

'IC4D

/&/D

#ICD

'

$

m

_

0

∆

1 !!! !!!

1 !!!

.!!1

.!!! !!! !!1

.!!! !!! !!1

.!!! !!! !!! !!1

'Σ E !!! !!!Σ

2! $v E 2! !!! 3

!! m3 E . 3

!! _& E .!!! &

2! 03 E .!!! !!! !2 3

2! ∆3 E .!!! !!! !!! !2 3

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