Applied Materials...

Applied Materials Characterization

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Cambridge University Press978-1-107-40569-1 - Materials Research Society Symposia Proceedings: Volume 48:Applied Materials CharacterizationEditors: W. Katz and P. WilliamsFrontmatterMore information

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MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS

ISSN 0272- 9172

Volume 1—Laser and Electron-Beam Solid Interactions and Materials Processing,J. F. Gibbons, L. D. Hess, T. W. Sigmon, 1981

Volume 2—Defects in Semiconductors, J. Narayan, T. Y. Tan, 1981Volume 3—Nuclear and Electron Resonance Spectroscopies Applied to Materials

Science, E. N. Kaufmann, G. K. Shenoy, 1981Volume 4—Laser and Electron-Beam Interactions with Solids, B. R. Appleton,

G. K. Celler, 1982Volume 5—Grain Boundaries in Semiconductors, H. J. Leamy, G. E. Pike,

C. H. Seager, 1982Volume 6—Scientific Basis for Nuclear Waste Management, S. V. Topp, 1982Volume 7—Metastable Materials Formation by Ion Implantation, S. T. Picraux,

W. J. Choyke, 1982Volume 8—Rapidly Solidified Amorphous and Crystalline Alloys, B. H. Kear,

B. C. Giessen, M. Cohen, 1982Volume 9—Materials Processing in the Reduced Gravity Environment of Space,

G. E. Rindone, 1982Volume 10—Thin Films and Interfaces, P. S. Ho, K.-N. Tu, 1982Volume 11—Scientific Basis for Nuclear Waste Management V, W. Lutze, 1982Volume 12—In Situ Composites IV, F. D. Lemkey, H. E. Cline, M. McLean, 1982Volume 13—Laser Solid Interactions and Transient Thermal Processing of Materials,

J. Narayan, W. L. Brown, R. A. Lemons, 1983Volume 14—Defects in Semiconductors II, S. Mahajan, J. W. Corbett, 1983Volume 15—Scientific Basis for Nuclear Waste Management VI, D. G. Brookins, 1983Volume 16—Nuclear Radiation Detector Materials, E. E. Haller, H. W. Kraner, W. A.

Higinbotham, 1983Volume 17—Laser Diagnostics and Photochemical Processing for Semiconductor

Devices, R. M. Osgood, S. R. J. Brueck, H. R. Schlossberg, 1983Volume 18—Interfaces and Contacts, R. Ludeke, K. Rose, 1983Volume 19—Alloy Phase Diagrams, L. H. Bennett, T. B. Massalski, B. C. Giessen,

1983Volume 20—Intercalated Graphite, M. S. Dresselhaus, G. Dresselhaus, J. E. Fischer,

M. ]. Moran, 1983Volume 21—Phase Transformations in Solids, T. Tsakalakos, 1984Volume 22—High Pressure in Science and Technology, C. Homan, R. K. MacCrone,

E. Whalley, 1984Volume 23—Energy Beam-Solid Interactions and Transient Thermal Processing,

J. C. C. Fan, N. M. Johnson, 1984Volume 24—Defect Properties and Processing of High-Technology Nonmetallic

Materials, J. H. Crawford, Jr., Y. Chen, W. A. Sibley, 1984







Volume 25—Thin Films and Interfaces II, J. E. E. Baglin, D. R. Campbell, W. K. Chu,1984

Volume 26—Scientific Basis for Nuclear Waste Management VII, G. L. McVay, 1984Volume 27—Ion Implantation and Ion Beam Processing of Materials, G. K. Hubler,

O. W. Holland, C. R. Clayton, C. W. White, 1984Volume 28—Rapidly Solidified Metastable Materials, B. H. Rear, B. C. Giessen, 1984Volume 29—Laser-Controlled Chemical Processing of Surfaces, A. W. Johnson,

D. J. Ehrlich, H. R. Schlossberg, 1984Volume 30—Plasma Processing and Synthesis of Materials, J. Szekely, D. Apelian,

1984Volume 31—Electron Microscopy of Materials, W. Krakow, D. Smith, L. W. Hobbs,

1984Volume 32—Better Ceramics Through Chemistry, C. J. Brinker, D. E. Clark, D. R.

Ulrich, 1984Volume 33—Comparison of Thin Film Transistor and SOI Technologies, H. W. Lam,

M. J. Thompson, 1984Volume 34—Physical Metallurgy of Cast Iron, H. Fredriksson, M. Hillerts, 1985Volume 35—Energy Beam-Solid Interactions and Transient Thermal Processing/1984,

D. K. Biegelsen, G. Rozgonyi, C. Shank, 1985Volume 36—Impurity Diffusion and Gettering in Silicon, R. B..Fair, C. W. Pearce,

J. Washburn, 1985Volume 37—Layered Structures, Epitaxy and Interfaces, J. M. Gibson, L. R. Dawson,

1985Volume 38—Plasma Synthesis and Etching of Electronic Materials, R. P. H. Chang,

B. Abeles, 1985Volume 39—High-Temperature Ordered Intermetallic Alloys, C. C. Koch, C. T. Liu,

N. S. Stoloff, 1985Volume 40—Electronic Packaging Materials Science, E. A. Giess, K.-N. Tu,

D. R. Uhlmann, 1985Volume 41— Advanced Photon and Particle Techniques for the Characterization of

Defects in Solids, J. B. Roberto, R. W. Carpenter, M. C. Wittels, 1985Volume 42—Very High Strength Cement-Based Materials, J. F. Young, 1985Volume 43—Coal Combustion and Conversion Wastes: Characterization, Utilization,

and Disposal, G. J. McCarthy, R. J. Lauf, 1985Volume 44—Scientific Basis for Nuclear Waste Management VIII, C. M. Jantzen,

J. A. Stone, R. C. Ewing, 1985Volume 45—Ion Beam Processes in Advanced Electronic Materials and Device

Technology, F. H. Eisen, T. W. Sigmon, B. R. Appleton, 1985Volume 46—Microscopic Identification of Electronic Defects in Semiconductors, N. M.

Johnson, S. G. Bishop, G. D. Watkins, 1985







Volume 47—Thin Films: The Relationship of Structure to Properties, C. R. Aita, K. S.SreeHarsha, 1985

Volume 48—Applied Material Characterization, W. Katz, P. Williams, 1985Volume 49—Materials Issues in Applications of Amorphous Silicon Technology,

D. Adler, A. Madan, M. J. Thompson, 1985Volume 50—Scientific Basis for Nuclear Waste Management IX, L. O. Werme, 1985






MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS VOLUME 48

Applied Materials Characterization

Symposium held April 15-18, 1985, San Francisco, California, U.S.A.

EDITORS:

W. KatzGeneral Electric Company, Schenectady, New York, U.S.A.

P. WilliamsArizona State University, Tempe, Arizona, U.S.A.

IMIRFSI MATERIALS RESEARCH SOCIETYPittsburgh, Pennsylvania






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Contents

Preface x l

Acknowledgments Xlll

PART I: ATOMIC ORDERING OF MATERIALSAND CHEMICAL BONDING ANALYSIS MATERIALS

THE USE OF LEED FOR THE CHARACTERIZATION OF SURFACE DAMAGEFROM PULSED-LASER IRRADIATION

Aubrey L. Helms, Jr., Chih-Chen Cho, Steven L. Bernasek, andClifton W. Draper 3

REFRACTORY METALS GROWTH ON MBE GaAsJ. Bloch and M. Heiblum 13

ELECTRON SPECTROSCOPIC STUDIES OF SUBSTOICHIOMETRICTANTALUM CARBIDE

G.R. Gruzalski, D,M, Zehner, and G.W. Ownby 19

CATION SOLUTE SEGREGATION TO SURFACES OF MgO and a-Al2O3

Robert C. McCune 27

PROPERTIES OF SINGLE-CRYSTAL SILICON FILMS ON AMORPHOUS SiO2ON SINGLE-CRYSTAL CUBIC ZIRCONIA SUBSTRATES

I. Golecki, R.L. Maddox, H.L. Glass, A.L. Lin, andH.M. Manasevit 37

ATOMIC INTERACTIONS IN SILICON-METAL COMPLEXES ON W(110)John D. Wrigley and Gert Ehrlich 47

THE THICKNESS EFFECT ON THE MICROSTRUCTURE OF SPUTTEREDFILMS STUDIED BY A NEW X-RAY DIFFRACTION METHOD

M. Hecq 55

SURFACE ELECTRONIC FUNCTION PROPERTIES FROM DEFECT HETEROGENEITYDOMINATED SPECULAR/GLANCING/GRAZING VERSUS BULK TRANSMISSIONSMALL-ANGLE SCATTERING (SAS) DIFFRACTION-PATTERN VIA THE STATICSYNERGETICS ALGORITHM/EXPERIMENTAL MODEL

Edward Siegel 63

CORE-LEVEL ELECTRON BINDING-ENERGY CHANGE OF EVAPORATED PdShigemi Kohiki 71

DEPTH OF PENETRATION OF THE PLASMA FLUORINATION REACTIONINTO VARIOUS POLYMERS

Eve A. Wildi, Gerald J. Scilla, and Alan DeLuca 79

SURFACE COMPOSITION OF CARBURIZED TUNGSTEN TRIOXIDEAND ITS CATALYTIC ACTIVITY

Masatoshi Nakazawa and H. Okamoto 85






INSTANTANEOUS IMPEDANCE OF ALUMINIUM IN ANODICPOLARIZATION STATUS

Zhu Yingyang, Wang Kuang, Zhu Rizhang, andZhang Wengi 91

PART II: MICROSTRUCTURES OF MATERIALS ANDELEMENTAL ANALYSIS

PROGRESS AND PROSPECTS OF MATERIALS CHARACTERIZATION ATSUBNANOMETER SPATIAL RESOLUTION USING FINELY FOCUSSEDELECTRON BEAMS

Michael Issacson 107

TRANSMISSION ELECTRON MICROSCOPE INVESTIGATION OF SPUTTEREDCo-Pt THIN FILMS

P. Alexopoulos, R.H. Geiss, and M. Schlenker 117

CHARACTERIZATION OF THE Ni/NiO INTERFACE REGION INOXIDIZED HIGH-PURITY NICKEL BY TRANSMISSION ELECTRONMICROSCOPY

Howard T. Sawhill and Linn W. Hobbs 127

INTERFACE STUDY OF Mo/GaAsPeiching Ling, Jyh-Kao Chang, Min-Shyong Lin, andJen-Chung Lou 137

DETERMINATION OF THE COMPOSITION AND THICKNESS OF THINPOTASSIUM POLYPHOSPHIDE FILMS

Klara Kiss and Paul M. Figura 145

DEFECTS IN PLATINUM SILICIDE FORMATIONMichael J. Warburton 159

AUGER ELECTRON ANALYSIS OF OXIDES GROWN ON A DILUTEZIRCONIUM/NICKEL ALLOY

R.A. Ploc, R.D. Davidson, and J.A. Roy 169

AUGER SPUTTER DEPTH PROFILING APPLIED TO ADVANCEDSEMICONDUCTOR DEVICE STRUCTURES

D.K. Skinner, C. Hill, and M.W. Jones 179

SURFACE SEGREGATION OF Ni-Cr ALLOYN.Q. Chen, Q.J. Zhang, and Z.Y. Hua 185

THE EFFECT OF OXYGEN ON DIFFUSION AND COMPOUNDINGAT Ni-GaAs (100) INTERFACES

J.S. Solomon, D.R. Thomas, and S.R. Smith 191

THE CHARACTERIZATION OF ALLOYED NiGeAuAgAu OHMIC CONTACTSTO AlInAs/GalnAs HETEROSTRUCTURE BY AUGER ELECTRONSPECTROSCOPY AND WAVE LENGTH DISPERSIVE X-RAY ANALYSIS

P.M. Capani, S.D. Mukherjee, L. Rathbun, H.T. Griem,G.W. Wicks, L.F. Eastman, and J. Hunt 203

EXPERIMENTAL INVESTIGATION OF GaAs SURFACE OXIDATIONS. Matteson and R.A. Bowling 215

viii






PART III: MATERIALS CHARACTERIZATIONWITH ION BEAMS

ON THE USE OF SECONDARY ION MASS SPECTROMETRY INSEMICONDUCTOR DEVICE MATERIALS AND PROCESS DEVELOPMENT

Charles W. Magee and Ephraim M. Botnick 229

SIMS CHARACTERIZATION OF THIN THERMAL OXIDE LAYERSON POLYCRYSTALLINE ALUMINIUM

F. Degreve and J.M. Lang 241

SIMS, SAM, AND RBS STUDY OF HIGH-DOSE OXYGEN IMPLANTATIONINTO SILICON

W.M. Lau, P. Ratnam, and C.A.T. Salama 263

IN SITU ION IMPLANTATION FOR QUANTITATIVE SIMS ANAYLSISRichard T. Lareau and Peter Williams 273

SECONDARY ION MASS SPECTROSCOPY OF CERAMICSJenifer A.T. Taylor, Paul F. Johnson, andVasantha R.W. Amarakoon 281

SIMS ANALYSIS OF PURE AND HYDRATED CEMENTSErich Naegele and Ulrich Schneider 289

APPLICATION OF SIMS DEPTH PROFILING TO CERAMICMATERIALS

Jenifer A.T. Taylor, Paul F. Johnson, andVasantha R.W. Amarakoon 299

ULTRASENSITIVE ELEMENTAL ANALYSIS OF MATERIALS USINGSPUTTER-INITIATED, RESONANCE-IONIZATION SPECTROSCOPY

J.E. Parks, D.W. Beekman, H.W. Schmitt, and M.T. Spaar 309

MICROFOCUSSED ION BEAMS FOR SURFACE ANALYSIS ANDDEPTH PROFILING

David R. Kinghan, P. Vohralik, D. Fathers, A.R. Waugh,and A.R. Bayly 319

SOME APPLICATIONS OF SIMS AND SSMS IN MATERIALSCHARACTERIZATION

J. Verlinden, R. Vlaeminck, F. Adams, and R. Gijbels 331

CHARACTERIZATION OF THIN METAL FILMS BY SIMS, AUGER,AND TEM

B.K. Furman, J.P. Benedict, K.L. Granato,R.M. Prestipino, and D.Y. Shih 341

TITANIUM SILICIDE FORMATION ON HEAVILY DOPEDARSENIC-IMPLANTED SILICON

S.L. Dowben, D.W. Marsh, G.A. Smith, N. Lewis,T.P. Chow, and W. Katz 355

THE CHARACTERIZATION OF INTENTIONAL DOPANTS INHgCdTe USING SIMS, HALL-EFFECT, AND C-V MEASUREMENTS

L.E. Lapides, R.L. Whitney, and C.A. Crosson 365

ix






PART IV: HIGH ENERGY METHODS AND MATERIALSCHARACTERIZATION USING PHOTON BEAMS

HYDROGEN MEASUREMENT OF THIN FILM SILICON: HYDROGENALLOY FILMS TECHNIQUE COMPARISON

Gary A. Pollock 379

HYDROGENATION DURING THERMAL NITRIDATION OF SiO2A.E.T. Kuiper, F.H.P.M. Habraken, and James T. Chen 387

GROWTH AND COMPOSITION OF LPCVD SILICON OXYNITRIDE FILMSF.H.P.M. Habraken and A.E.T. Kuiper 395

MeV HELIUM MICROBEAM ANALYSIS: APPLICATIONS TO SEMICONDUCTORSTRUCTURES

R.A. Brown, J.C. McCallum, C D . McKenzie, andJ.S. Williams 403

CONCENTRATION MEASUREMENTS AND DEPTH PROFILING OFPHOSPHORUS AND BORON BY MEANS OF (p, ) RESONANTREACTIONS

M.J.M. Pruppers, F. Zijderhand, F.H.P.M. Habraken,and W.F. van der Weg 409

MATERIALS CHARACTERIZATION WITH INTENSE POSITRON BEAMSI.J. Rosenberg, R.H. Howell, M.J. Fluss, and P. Meyer 419

EFFECTS OF AMBIENT GAS ON THE OUT-DIFFUSION OF NICKELAND COPPER THROUGH THIN GOLD FILMS

R.K. Lewis, S.K. Ray, K. Seshan 425

ELASTIC RECOIL ANALYSIS OF HYDROGEN IN ION-IMPLANTED'MAGNETIC BUBBLE GARNETS USING 44 MeV CHLORINE IONS

A. Leiberich, B. Flaugher, and R. Wolfe 431

APPLICATIONS OF SURFACE ANALYSIS BY LASER IONIZATION(SALI) TO INSULATORS AND II-VI COMPOUNDS

C.H. Becker, C M . Stahle, and D.J. Thomson 447

INFLUENCE OF THE DENSITY OF OXIDE PARTICLES ON THEDIFFUSIONAL BEHAVIOR OF OXYGEN IN INTERNALLY OXIDIZED,SILVER-BASED ALLOYS

F.H. Sanchez, R.C. Mercader, A.F. Pasquevich,A.G. Bibiloni, and A. Lopez-Garcia 455

HIGH-TEMPERATURE RAMAN STUDIES OF PHASE TRANSITIONSIN THIN-FILM DIELECTRICS

Gregory J. Exarhos 461

USE OF ENERGY-LOSS STRUCTURES IN XPS CHARACTERISATIONOF SURFACES

J.E. Castle, I. Abu-Talib, and S.A. Richardson 471

AUTHOR INDEX

SUBJECT INDEX

481

483






Preface

This book contains papers presented at the symposium on "Applied Ma-terials Characterization" held in San Francisco, CA, April 15-18, 1985. Thissymposium, which was part of the Materials Research Society meeting, wasthe first ever to address the topic of materials characterization. Thesymposium provided an international forum consisting of eight oral sessionsin which eight invited and 55 contributed papers were presented.

The symposium dealt with both the development of advanced characteri-zation techniques and the application of characterization technology tonovel materials. Papers addressed understanding materials from an atomiclevel as well as bulk chemical and physical properties. Sessions dealt withattempting to unravel materials on a fundamental level using many of the morecommon electron and ion spectroscoples. In addition, frontier areas in newcharacterization techniques were also covered - novel methods such asRaman spectroscopy for studies of high-temperature phase transitions,conversion-electron Mossbauer spectroscopy, and positron annihilation studieswere shown to be promising surface analytical tools.

Symposium Co-Chairmen

W. Katz P. Williams






Acknowledgments

We would like to thank all the conference participants, particularlythe invited speakers who provided excellent reviews of their topics. Theyare:

W. Gibson, R.J. Hitzman, M. Isaacson, M. Lagally, C.W. Magee,R.P. Messmer, J. Spence, N. Winograd

We are also grateful to the session chairmen who directed the sessionsand guided discussion:

J. Burkstrand, V.R. Deline, B.K. Furman, C.W. Magee, R.P. Messmer,G.A. Smith

It is our pleasure to acknowledge with gratitude the financial supportprovided by the following companies:

A.G. Associates, Cameca Ins t rumen t s ,Charles Evans and associatesGeneral Ionex, Instruments, S.A., JOEL, Leybold-Heraeus, Perkin-Elmer-Physical Electronics Division, Philips, Surface ScienceInstruments, V.G. Instruments






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