An Electrochemical Immittance Analysis of the Dielectric ... · The use of appropriate analytical...

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Draft An Electrochemical Immittance Analysis of the Dielectric Properties of Self-Assembled Monolayers Journal: Canadian Journal of Chemistry Manuscript ID cjc-2020-0005.R1 Manuscript Type: Article Date Submitted by the Author: 27-Feb-2020 Complete List of Authors: Dionne, Eric; Université de Montréal, Chimie Ben Amara, Fadwa; Université de Montréal, Chimie Badia, Antonella; Université de Montréal, Chimie Is the invited manuscript for consideration in a Special Issue?: University of Montreal Keyword: self-assembled monolayer, dielectric properties, ionic insulator, electrochemical impedance spectroscopy Note: The following files were submitted by the author for peer review, but cannot be converted to PDF. You must view these files (e.g. movies) online. cjc-2020-0005r2_figures.docx https://mc06.manuscriptcentral.com/cjc-pubs Canadian Journal of Chemistry

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Draft

An Electrochemical Immittance Analysis of the Dielectric Properties of Self-Assembled Monolayers

Journal: Canadian Journal of Chemistry

Manuscript ID cjc-2020-0005.R1

Manuscript Type: Article

Date Submitted by the Author: 27-Feb-2020

Complete List of Authors: Dionne, Eric; Université de Montréal, ChimieBen Amara, Fadwa; Université de Montréal, ChimieBadia, Antonella; Université de Montréal, Chimie

Is the invited manuscript for consideration in a Special

Issue?:University of Montreal

Keyword: self-assembled monolayer, dielectric properties, ionic insulator, electrochemical impedance spectroscopy

Note: The following files were submitted by the author for peer review, but cannot be converted to PDF. You must view these files (e.g. movies) online.

cjc-2020-0005r2_figures.docx

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Canadian Journal of Chemistry

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An Electrochemical Immittance Analysis of the

Dielectric Properties of Self-Assembled Monolayers

Eric R. Dionne, Fadwa Ben Amara, and Antonella Badia

Département de chimie, Université de Montréal, C.P. 6128, succursale Centre-ville,

Montréal, QC H3C 3J7 CANADA

Corresponding author: Antonella Badia ([email protected])

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Abstract

The ability of organic self-assembled monolayers (SAMs) to act as insulating barriers to

charge and ion transport or molecular diffusion is critical to their application in a variety of

technologies. The use of appropriate analytical tools to characterize the dielectric

properties of these molecular thin films is important for the control of structural defects

and establishing structure–property relations. In this context, we analyze the ionic

permeability and dielectric response of SAMs formed from a homologous series of n-

alkanethiolates (CH3(CH2)nS, where n = 9, 11, 13, 15, 17, and 19) on gold using the

immittance quantities of the complex impedance, capacitance, and permittivity available

from the same electrochemical impedance spectroscopy (EIS) measurement. The most

sensitive parameters and frequency range for characterizing the capacitive behavior and

assessing the ion-blocking quality of the SAMs under non-faradaic conditions are

identified. We also investigate the effect of chain length on the interfacial capacitance and

dielectric constant of ionic insulating SAMs. The advantages of the capacitance quantity

and related permittivity data over traditional impedance representations and equivalent

electric circuit modeling are discussed.

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Key words: self-assembled monolayer, dielectric properties, ionic insulator,

electrochemical impedance spectroscopy

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Introduction

Organothiols chemisorb to noble metal surfaces, forming well-defined two-dimensional

(2D) films coined "self-assembled monolayers" (SAMs).1-4 These monomolecular layers

are integral components of nanotechnology,2 in organic/molecular electronics

(capacitors, gate dielectrics for low-voltage FETs, junctions),5 soft lithography,6 and

surface-based biomolecular sensors7, 8. The density of structural defects and pinholes in

the SAM (i.e., sites for molecular and ion penetration or electron transport to the

underlying metal surface) must be low for this nanometer thick film to act as an effective

barrier to chemical etchants, non-specific adsorption, charge accumulation or charge

transfer. Electrochemical methods to characterize the structural integrity and insulating

character of SAMs include cyclic voltammetry (i.e., oxidoreduction of soluble redox

species, gold oxide formation/stripping, and underpotential deposition/stripping of metals)

and electrochemical impedance spectroscopy (EIS).9 The latter ac technique measures

the resistive and capacitive properties of electrochemical cells.10 It can be used to

characterize ionic or electronic conductors as well as dielectric materials.11 The

frequency-resolved aspect of EIS is especially powerful as it probes conduction (electrical

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and ionic) and electron transfer processes occurring at material/electrolyte interfaces over

time scales of microseconds (MHz) to seconds (Hz to subHz).12 Non-faradaic EIS has

been used to investigate the permeability of SAMs to electrolyte ions, their

electrochemical stability, the effect of substrate roughness, and potential-induced change

in the SAM microstructure.13-25

A library of mathematically-related immittance functions is available from a single EIS

measurement (i.e., complex impedance, admittance, capacitance, permittivity, and

dielectric modulus).10, 12, 26 Analyses of film-modified electrodes generally consider only

the raw complex impedance data.13-22, 24 However, an immittance approach more fully

captures the dielectric signature and ionic conductivity of the SAM. Specifically, the

complex impedance representation emphasizes values at low frequency and is often

used to identify Faradaic processes parallel to the double-layer capacitance.10 By

contrast, complex admittance and capacitance representations emphasize values at high

frequency and are better suited to the analysis of blocking electrodes, for which

information is ultimately sought on the system capacitance, or parallel processes whose

time constants differ due to different resistive components.10, 11 For example, Góes et al.

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demonstrated the unique capability of capacitance spectra to separate field-induced ion

migration within the film at low frequency from the ionic dipolar relaxation of the SAM at

higher frequency for Au/SAM/electrolyte interfaces behaving as leaky capacitors.23

Additionally, in a study of potential-induced defects in SAMs, Boubour and Lennox

observed a sharp increase in the absolute magnitude of the permittivity at low frequency

due to the penetration and accumulation of ions and solvent into the low dielectric

hydrocarbon region of the SAM.16 These investigations clearly demonstrate the greater

sensitivity of the impedance-derived capacitance and permittivity quantities over the

measured impedance at exposing the ionic permeability of low conductivity structures like

SAMs.

The present work uses the complex impedance, capacitance, and permittivity functions

to analyze the dielectric behavior of SAMs of n-alkanethiolates (CH3(CH2)nS) on gold at

a structurally non-perturbing applied dc potential and in the absence of a redox probe.

The focus is on the capacitance and relative permittivity as these properties are used as

figures of merit to characterize the performance of organic dielectric layers.27, 28 We first

consider the responses of CH3(CH2)11SAu SAMs with varying degrees of ionic

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permeability or leakiness to establish the most sensitive parameters and relevant

frequency range for characterizing the capacitive behavior and evaluating the ion-

blocking quality of the SAM. We then investigate the effect of chain length on the

interfacial capacitance and dielectric constant of ionic insulating SAMs. This work differs

from previous investigations employing EIS to characterize the dielectric characteristics

of CH3(CH2)nSAu SAMs in the broader frequency range probed (0.1 Hz–1 MHz) to assess

the SAM permeability13-17, 19, 20, 22, 24, 25 and the use of ion-blocking SAMs with near-ideal

capacitor behavior for the study of the chain length dependence23.

BACKGROUND

Relationship between Impedance, Capacitance, and Relative Permittivity

EIS applies a low-amplitude, sinusoidal ac potential (typically 5–10 mV peak-to-peak)

of a given frequency with a dc-offset potential to the electrochemical cell.10, 26 The

response to this potential perturbation is an ac current signal. The impedance Ẑ can be

expressed mathematically as the complex (frequency-dependent) ratio of the input

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potential and measured current output.10, 29, 30 Ẑ is generally represented as a complex

number:

Ẑ () = Z′() + jZ″()

(1)

where Z′ and Z″ are the real and imaginary parts, j is the imaginary unit (-1)1/2, and is

the angular frequency of the potential (i.e., ω = 2πf where f is the applied frequency in

Hz). Z′ is the resistance of the system to current flow and Z″, the reactance, describes the

opposition to changes in the current flow. The absolute impedance magnitude Z| is given

by:

Z()| = (2)𝑍()2 + 𝑍()2

Mathematical equations for Z′() and Z″() of the equivalent electric circuits commonly

used to fit the impedance response of SAM-modified electrodes are given in Table 1.

Analogous expressions for the complex capacitance Ĉ() and complex relative

permittivity (), also commonly referred to as the complex dielectric constant, are given 𝜖

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in Table 2. C′ corresponds to the effective double-layer capacitance and ϵ´ is the relative

permittivity. At low frequency, ϵ´ and C′ adopt static values. The imaginary components

C″ and ϵ are associated with losses in the form of energy dissipation. Ẑ () is related

phasorially to Ĉ():10, 23, 31

(3)Ĉ(𝜔) =1

Ẑ ()(𝑗)

The real part C′ is related the imaginary part Z′′ and the imaginary part C′′ is related to the

real part Z′. Assuming a Helmholtz parallel plate capacitor model for the

gold/SAM/electrolyte interface, Ĉ() can be reported in terms of ():𝜖

(4)𝐶(𝜔) =𝜖(𝜔)𝜀𝑜𝐴

𝑑

where o is the permittivity of free space (8.85419 × 10-12 F m-1), A is the electrode area,

and d is the SAM film thickness.23, 29, 30 The primary impedance data, Z′() and Z′′(), can

thus be used to generate capacitance and relative permittivity spectra (Table 2), which

highlight the electrical energy storage and dissipative characteristics of the system rather

than its resistive properties (impedance).

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The other impedance-related quantities are the complex admittance ( ) and dielectric 𝑌

modulus ( ). These quantities are merely the reciprocals of Ẑ and , respectively,26 and 𝑀 𝜖

are not considered here.

Equivalent Electric Circuit Representations of the SAM-Modified Metal Interface

The equivalent circuits employed to fit the non-faradaic impedance response of SAM-

modified metal electrodes at a structurally non-perturbing dc potential and examples of

impedimetric complex plane plots (Z vs Z) are shown in Fig. 1. The Helmholtz-type

equivalent circuit I, consisting of a solution resistance Re in series with a constant phase

element (CPE), describes defect-free ion-blocking SAMs.13, 15, 20, 32 SAMs presenting

defect sites for ion permeation are modeled using the Randles-type circuit II, which

includes a resistance RSAM in parallel with the CPE.18, 21, 22, 33 When RSAM ~108 cm2,

the impedance response of the SAM can be fit using circuit I.

The use of a CPE in the place of a capacitor to model the interfacial capacitance C

significantly improves the quality of the fits of the experimental data. The CPE is a power

law-dependent parameter that accounts for deviations from pure capacitor behavior. The

impedance of a CPE ẐCPE() is given by the relation:

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ẐCPE() = (5)1𝑇(𝑗𝜔)𝛼

where T is the parameter related to the electrode capacitance and is the constant phase

exponent (0 ˂ 1).26 When = 1, the impedance of the CPE is equivalent to that of an

ideal capacitor. In practice, a deviation from unity (e.g., 0.9 1) is almost always

observed, even for a near-perfect blocking film, due to the nanoscale surface roughness

and polycrystallinity of the underlying solid electrode causing local variations of the

current density in the double layer.15, 19 When ≳ 0.99, C is assigned the value of T and

the difference in the units of T (F s1- cm-2) and C (F cm-2) is ignored.34

The total electrochemical capacitance of the SAM-modified electrode is approximated

by two capacitors in series:

C-1 = CSAM-1 + CD-1 (6)

where CSAM is the capacitance of the SAM and CD is the concentration-dependent diffuse

layer capacitance of the electrolyte solution.9, 13, 21, 23, 24 For densely-packed SAMs, CD is

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at least an order of magnitude larger than CSAM so that its contribution to the total

capacitance and T can be neglected, as demonstrated experimentally by prior studies.13,

21

Experimental

Materials

The following n-alkanethiols and reagents were purchased and used without further

purification: 1-decanethiol (CH3(CH2)9SH, 96%, Sigma-Aldrich), 1-dodecanethiol

(CH3(CH2)11SH, ≥ 97%, Fluka), 1-tetradecanethiol (CH3(CH2)13SH, ≥ 98%, Fluka), 1-

octadecanethiol (CH3(CH2)17SH, 98% Sigma-Aldrich), and sodium perchlorate (≥ 98%, Sigma-

Aldrich). 1-Hexadecanethiol (CH3(CH2)15SH, > 95%, Sigma-Aldrich) was purified by column

chromatography prior to use (SiO2, hexane:pentane (1:1 v/v), Rf = 0.75). 1-Eicosanethiol

(CH3(CH2)19SH) was synthesized from CH3(CH2)19OH (98%, Sigma-Aldrich) by refluxing with

48% HBr to produce CH3(CH2)19Br followed by reaction with thiourea.35 Ultrapure water with a

resistivity of 18.2 MΩ cm and total organic carbon of ≤ 5 ppb (MilliQ Gradient) was used to

prepare the electrolyte solution, rinse all surfaces, and as the probe liquid in the contact angle

measurements.

Preparation of CH3(CH2)nSAu SAMs for Electrochemical Impedance Spectroscopy

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Gold bead electrodes (99.99%) of surface area of 0.20 to 0.28 cm2 were used for the

electrochemical measurements. The electrodes were first sonicated in a 2:1 (v/v) mixture of 30%

NH4OH/30% H2O2 for 60 min, rinsed copiously with ultrapure water, and subjected to a 15 min

treatment in an oxygen-plasma cleaner at medium RF power setting (Harrick model PDC-32G).

Prior to SAM formation, the gold bead was immersed in dilute aqua regia (3:1:6 HCl/HNO3/H2O)36

for ca. 10 min to dissolve away gold and impurities from the bead surface, rinsed copiously with

ultrapure water, and sonicated in ultrapure water for 2 min to remove traces of acid. Finally, the

bead was flame-annealed and quenched in ultrapure water thrice and rinsed thoroughly with

absolute ethanol.

The bead was immersed in an ethanolic solution of 0.2 mM CH3(CH2)nSH for 18–24 h at room

temperature in a sealed incubation vial.2, 9 Prior to use, the SAM-modified bead electrode was

removed from the CH3(CH2)nSH solution, rinsed copiously with absolute ethanol followed by

ultrapure water, and dried with nitrogen.

Preparation of CH3(CH2)nSAu SAMs for Contact Angle Measurements

Premium quality glass slides cut into pieces of 20 mm 25 mm were first cleaned by

immersion in a solution of 3:1 v/v concentrated H2SO4/30% H2O2 (Warning - piranha

solution is a strong oxidizer. Handle with extreme caution!) at room temperature. The

glass slides were rinsed copiously with ultrapure water, sonicated thrice in ultrapure water

to completely remove traces of sulfuric acid, sonicated once in absolute ethanol, and dried

under a stream of nitrogen gas.

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The clean glass slides were coated with titanium and gold by thermal evaporation (VE-90

vacuum evaporator, Thermionics Vacuum Products). The deposition of metal was initiated at a

pressure of ∼3 × 10-7 Torr. An adhesion layer of titanium (99.99%) of 5 nm thickness was first

deposited onto the glass at a constant rate of 0.01 nm s-1. The substrates were heated to ~200 oC

with a UV lamp before the start of the gold evaporation. A 150 nm layer of gold (99.99%) was

deposited while gradually varying the rate from 0.1 nm s-1 for the deposition of the first 65 nm to

0.01 nm s-1 for the final 40 nm. The substrate temperature was maintained between 200 oC and

240 oC during the gold deposition process by regulating the intensity of the UV lamp.

After cooling down to room temperature, the gold-coated glass slides were removed from the

evaporator chamber and immediately immersed in ethanolic solutions of 0.2 mM CH3(CH2)nSH.

The gold substrates were incubated for 16–24 h at room temperature in sealed incubation vials.

Prior to a measurement, the SAM-functionalized gold-coated slide was removed from the

incubation solution, thoroughly rinsed with pure ethanol followed by ultrapure water, and dried

under nitrogen.

Electrochemical Impedance Spectroscopy (EIS)

EIS measurements on the CH3(CH2)nSAu SAMs formed on gold bead electrodes were carried

out using a three-electrode glass cell thermostatted with a circulation water bath and SP-200

potentiostat (BioLogic Science Instruments) equipped with an impedance analyzer. The electrolyte

solution, 1.0 M NaClO4(aq), was deoxygenated by bubbling nitrogen into the electrochemical cell

for 20 min before the start of an experiment. Measurements were carried out under a blanket of

nitrogen at 22.0 ± 0.1 oC. Impedance spectra were acquired over a frequency span of 7 decades,

from 1 MHz to 0.1 Hz, at 32 points per decade using an ac voltage amplitude of 10 mV and an

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applied voltage of -0.185 V versus Ag/AgCl, which is positive of the potential of zero charge

measured for CH3(CH2)nSAu SAMs in 0.1 M HClO4(aq) (-0.53 V to -0.51 V for n = 9–17)37. SAMs

behave as ionic insulators at this dc potential.14 ZView software (version 3.4f, Scribner Associates)

was employed for complex nonlinear least-squares (CNLS) fitting of the impedance data to an

appropriate electrical equivalent circuit.

Contact Angle Measurements

Static contact angle measurements were carried out using a homemade setup consisting of a

micrometer syringe (Oakton Gilmont) to manually dispense a 2.0 L droplet of probe liquid onto

the SAM surface and a USB digital microscope to capture images of the liquid droplets on the

surface. 8–10 droplets of ultrapure water were deposited on each SAM-modified gold-coated slide.

Images of the droplets were analyzed using the contact angle plugin of Image J (NIH) to determine

the contact angle formed between the SAMs and water droplets.

Results and Discussion

Immittance Spectra of Ionic Insulating versus Leaky SAMs

We begin by comparing the impedance responses of three CH3(CH2)11SAu SAMs

whose degree of ionic permeability or leakiness follows the order SAM 3 SAM 2 SAM

1 (Table 3). The impedimetric complex plane plot (Fig. 2a) of the insulating (ion-blocking)

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SAM 1 is a nearly vertical line parallel to the y-axis that can described by the equivalent

circuit I, Re + CPE, over the entire frequency range of 1 MHz to 0.1 Hz. We also fitted the

impedance data of this SAM using the circuit II, Re + CPE|RSAM, to show that its resistance

to ion permeation is a factor of 10–100 higher than that of the leaky SAMs 2 and 3 (Table

3). By contrast, the Z–Z plots of the leaky SAMs 2 and 3 deviate from the vertical line

and exhibit pronounced curvature at frequencies ~10 Hz. These SAMs behave as a

capacitor contaminated by a resistive component related to current leakage at defect sites

and must be fit using the equivalent circuit II.

Bode plots of the impedance magnitude Z of the three SAMs show no significant

differences (Fig. 2b). Z at 0.1 Hz is high at 2–3 M cm2. The slopes of the region of linear

dependence of Z on the logarithm of frequency (0.1 Hz–10 kHz) are -0.991, -0.989, and

-0.997 for SAMs 1, 2, and 3, respectively. The slope corresponding to purely capacitive

behavior is -1.10 The measured impedance is dominated by the solution resistance Re at

high frequencies so that Z becomes independent of frequency. A look at the frequency

dependence of the individual Z and Z components (Fig. 2c) reveals that the magnitudes

of Z at 0.1 Hz are comparable for SAMs 1 and 2, while that of the leakier SAM 3 is lower.

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The Z values at 0.1 Hz of the leakier SAMs 2 and 3 are significantly larger than that of

the ion-blocking SAM 1. The magnitude of Z follows the fitted value of RSAM, where a

higher RSAM corresponds to a lower Z: RSAM = 380 M cm2 (1), 13 M cm2 (2), and 3.9

M cm2 (3). This difference between the leaky SAMs 2 and 3 and insulating SAM 1 is

lost in the Bode plots of Z because the magnitude of Z is much larger than that of Z,

and in the case of the leakier SAM 3, a higher Z compensates the lower Z".

Most significantly, the insulating SAM 1 presents a phase angle of 89o between 1.0

and 0.1 Hz (Fig. 2d). An ideal capacitor exhibits of 90o at all frequencies. Current

leakage through the dielectric layer of the capacitor results in a deviation from 90o. The

phase angles of the leaky SAMs exhibit such a deviation; for SAM 2 decreases from

88o at 1.0 Hz to 83o at 0.1 Hz while for SAM 3 varies from 87o at 1.0 Hz to 73o at 0.1

Hz. The phase angle approaches zero at higher frequencies when Re dominates the total

impedance. Boubour and Lennox previously considered SAMs exhibiting a phase angle

≥ 88o at 1–10 Hz to be effectively free of defects.15 The minimum frequency they probed

was 1 Hz. We however find that a more stringent discrimination between insulating and

leaky SAMs requires probing lower frequencies, i.e., between 1 and 0.1 Hz. These

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frequencies are more in line with the rate of ionic conduction (permeation) processes in

SAMs 2 and 3, given by the product (RSAMT)-1, which falls between 0.01 and 0.1 Hz. For

example, although of SAM 2 is 88o at 1–10 Hz, it behaves as a leaky capacitor at lower

frequencies, and a Helmholtz-type model cannot be used to describe its impedance

response (Fig. 2a). Our analysis of more than 130 CH3(CH2)nS-modified gold electrodes

establishes that a of 89o at 1 Hz is generally required for the Au/SAM/electrolyte ≳

interface to behave as a near ideal capacitor down to 0.1 Hz.15

We now turn to the real C and imaginary C components derived from Z and Z,

respectively (Table 2), to reveal differences in the capacitive behavior of the three

CH3(CH2)11SAu SAMs. The capacitive complex plane plots (Fig. 3a) show semicircles of

similar diameters for SAMs 1 and 2, and hence directly report that these SAMs have

nearly identical capacitances, while SAM 3 has a larger (diameter) capacitance. The C

values at 0.1 Hz (Fig. 3b) yield static capacitances of 1.08 F cm-2 for the insulating SAM

1, and 1.07 F cm-2 and 1.30 F cm-2 respectively for the leaky SAMs 2 and 3. These

values are in close agreement with the T values obtained from CNLS fits of the impedance

data to the equivalent circuit II (Table 3). In addition to the semicircle, the complex plane

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plots of the leaky SAMs exhibit straight lines at low frequencies due to ion diffusion into

the films.23 A concomitant rise in C with decreasing frequency is observed at frequencies

~1 Hz (Fig. 3c). The maximum amplitudes of the relaxation peaks centered around 100

kHz in the Bode diagrams of C are approximately equal to one-half of the C values at

low frequency (indicative of a near homogeneous dielectric relaxation).38

The complex plane and Bode plots of the real ϵ and imaginary ϵ parts of the complex

relative permittivity (Fig. 3d-f) mirror those of the complex capacitance components. The 𝜖

ϵ values at 0.1 Hz (Fig. 3e) immediately show that the insulating SAM 1 and the less

leaky SAM 2 have nearly identical static dielectric constants, ϵSAM 1 = 2.00 and ϵSAM 2 =

1.96. The leakier SAM 3 has a higher dielectric constant, ϵSAM 3 = 2.35, due to the

presence of ions and water molecules in the SAM.

Overall, the frequency dependence of the different dielectric parameters shows that leaky and

insulating SAMs display differences at frequencies 10 Hz, especially between 1 and 0.1 Hz.

Notably, the immittance data indicates that, depending on the degree of ion permeability, leaky

and insulating SAMs do not always present significant differences in the static capacitance and

dielectric constant. These properties are not reliable indicators of the ionic insulating quality of the

SAM. Of the three measured parameters, Z, Z, and , the most direct diagnostic indicator of ion

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permeability is the phase angle at low frequencies. SAMs with a phase angle 89o at ≳

frequencies of 0.1–1 Hz can be considered defect-free for practical purposes, meaning

that current leakage at monolayer defect sites is negligible.

Effect of the CH3(CH2)nS Chain Length on the Dielectric Properties of the SAM

Representative impedance plots of gold electrodes modified with CH3(CH2)nS SAMs of n = 9,

11, 13, 15, 17, and 19 are presented in Fig. 4a-c. Here we consider only SAMs that exhibit of

~89o at 1 Hz and behave as ionic insulators to limit the alteration of the SAM dielectric

response by current leakage at defect sites. A trend is not immediately apparent from the

primary impedance data. By contrast, the corresponding capacitance plots (Fig. 4d-f)

clearly resolve the chain length differences in the SAM dielectric characteristics. Both the

diameters of the semicircles in the CC plots (Fig. 4d) and the C values at frequencies

~1 kHz (Fig. 4e), where C is largely independent of frequency, show outrightly the

decrease of the static capacitance with increasing n expected for an increasing layer

thickness (eq 4).39 The chain length dependence observed in the Bode plots of C extends

to the Bode plots of C, where the maximum peak amplitude decreases with increasing n

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(Fig. 4f). The complex plane and Bode plots of ϵ and ϵ (Fig. 4g-i) show that spans a 𝜖

narrow range.

Fig. 5a presents chain length dependent plots of the reciprocal of the capacitance of

the SAM derived from the (i) fitted T values ( = 0.991–0.994), referred to as CT, and (ii)

C values at 0.1 Hz, referred to as C0.1Hz. First, CT (1/CT) and C0.1Hz (1/C0.1Hz) are

statistically indistinguishable for a given n (95% confidence level). Second, the reciprocal

of the SAM capacitance varies linearly with n, indicating that the

Au/S(CH2)nCH3/electrolyte interface obeys the Helmholtz ideal capacitor model, as per

eq 4. Dielectric constants were determined for each n from CT and C0.1Hz using the SAM

film thickness d calculated assuming a 30o tilt from the surface normal of all-trans

extended alkyl chains and a Au-S layer thickness of 0.19 nm.40, 41 Both capacitance

parameters yield mean ϵSAM values that are the same (within error) for a given n (Fig. 5b).

ϵSAM increases linearly from ~2.01 at n = 9 to ~2.20 at n = 15 and tends towards a limiting

value at longer chain lengths. ϵSAM is ~2.26 at n = 19. Values of ϵSAM determined using

electrochemical or optical methods range from 2.0 to 2.6 for CH3(CH2)nSAu of n 9.23, 37,

39, 41, 42

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The optical (high-frequency) dielectric constant of CH3(CH2)nSH liquids increases by

~0.003 per CH2 due to the higher dielectric constant of CH2 (ϵ = 2.164) versus CH3 (ϵ =

1.399).43, 44 The linear variation of ϵSAM of ~0.03 per CH2 from n = 9 and 15 is however a

factor of 10 greater, suggesting that the chain length dependence of ϵSAM stems from the

supramolecular organization within the SAM. Theoretical studies indicate that the density

of the surface-tethered alkyl chains influences the value of ϵ.27, 45, 46 Surface IR

spectroscopy measurements by Porter and coworkers reveal that the conformational

disorder of the alkyl chains, in the form of gauche bond defects, progressively decreases

with chain length, stabilizing at n 15, for which the CH2 peak positions indicate that the ≳

chains are in a crystalline-like environment.39 The water contact angle (hydrophobicity)

also shows an evolution of the SAM structure and associated interface with chain length

(Fig. 6). The chain length dependence of mirrors that of ϵSAM. plateaus at 109.6 0.3o

for n ≳ 15, signaling a constant SAM structure for the longer chains, in agreement with

the findings of Chen et al.47. A greater conformational order should favor closer packing

of the polymethylene chains in the SAMs and lead to a higher dielectric constant. The

dielectric constants of SAMs formed from the longest-chain n = 17 and 19 approach the

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value of 2.32 reported for high-density polyethylene.48 The observed increase in ϵSAM as

a function of n likely reflects an evolution of the alkyl chain order and packing density

within the SAM.

In contrast to our findings, Góes et al. report a decrease in ϵSAM from n = 7 to n = 11

for leaky SAMs as the ionic permeability decreases with chain length.23 This clearly

different chain length dependency highlights the need to use insulating SAMs for the

electrochemical determination of the dielectric constant of the organic film.

Conclusions

We compared the non-faradaic electrochemical impedance response of the

CH3(CH2)nS-modified gold electrode with the mathematically-derived complex

capacitance and relative permittivity to characterize the ionic insulating and dielectric

properties of the SAM. The most unambiguous and direct indicator of the SAM leakiness

is the measured phase angle at low frequencies. SAMs with a phase angle 89o at ≳

frequencies of 0.1–1 Hz effectively behave as ionic insulators, whose complex plane plots

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of the impedance and capacitance can be fit using a Helmholtz-type equivalent circuit.

The real parts C and ϵ respectively of the complex capacitance and relative permittivity

derived from the imaginary part Z" of the complex impedance at low frequency (0.1 Hz)

directly yield the static interfacial capacitance and SAM dielectric constant, eliminating

the need to model the Au/SAM/electrolyte interface with an appropriate equivalent electric

circuit. The complex plane and Bode plots of the real and imaginary components C and

C" resolve outrightly the chain length dependence of the interfacial capacitance, unlike

the analogous representations of the impedance components.

For ionic insulating SAMs, the reciprocal of the capacitance varies linearly with the

number of methylene units in the CH3(CH2)nS across the chain lengths investigated of n

= 9–19, indicating that the Au/SAM/electrolyte interface behaves as an ideal capacitor.

The SAM dielectric constant determined from the capacitance using the Helmholtz model

increases with n and approaches the value reported for high-density polyethylene at n ≳

17. The chain length dependence of ϵSAM is consistent with the evolution of the alkyl chain

conformation and packing within the SAM indicated by a previous surface IR

spectroscopy study39 and our contact angle measurements. The variation of ϵSAM with n

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has implications for SAM thicknesses measured by ellipsometry, in which a single

dielectric constant is typically used for all chain lengths.39, 49, 50

Our findings demonstrate that frequency-resolved capacitive (C, C") and permittivity

(ϵ, ϵ) analyses are more effective than traditional representations and equivalent circuit

modeling of the measured impedance at revealing the structure-related charging capacity

and dielectric characteristics of an organic film-modified electrode/electrolyte interface.

Future work will focus on characterizing the density and size of the defects in SAMs

presenting different degrees of leakiness and non-Faradaic immittance signatures by

using a redox probe in solution (Faradaic EIS).17, 51, 52

ACKNOWLEDGEMENTS

This research was supported by NSERC (Discovery and Discovery Accelerator

Supplement to A.B.). F.B.A. thanks the Tunisian Ministry of Higher Education and

Scientific Research for a scholarship.

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Table 1. Impedance of Helmholtz- and Randles-type circuits53, 54

Table 2. Conversion of the measured impedance to capacitance and relative

permittivity10, 31, 38

Table 3. Fitted results of the Randles circuit elements for CH3(CH2)11SAu SAMs exhibiting

different ionic insulating character

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Figure 1. Schematic of the Au/S(CH2)nCH3/aqueous electrolyte interface at an applied

potential positive of the potential of zero charge. Equivalent circuits used to fit the

impedance response of a defect-free SAM (I) and SAM presenting sites for ion

permeation (II). Re is the electrolyte solution resistance, CPE is a constant phase element

used to model the capacitance of the SAM-modified interface, and RSAM is the resistance

to ion transport in the SAM. Complex plane impedance plots calculated using the

equivalent circuits I and II and the parameters Re = 10 , T = 2 10-7 F s-1, = 0.993,

and RSAM = 5 107 . The lower highlighted inset is a zoom of the impedance data between 1

MHz and 1 Hz.

Figure 2. Impedance responses for CH3(CH2)11SAu SAMs of differing ionic permeability. (a)

Impedimetric complex plane plot. (b) Bode plot of the impedance magnitude |Z|. (c) Bode plot of

Z′ and Z′′. (d) Bode plot of the phase angle φ. Impedance spectra were acquired at -0.185 V vs

Ag/AgCl in 1.0 M NaClO4(aq). Symbols are the experimental data and solid lines are the results of

CNLS fits of the data using the equivalent circuit Re + RSAM∥CPE.

Figure 3. Capacitance (C′, C′′) and relative permittivity (ϵ′, ϵ′′) spectra of

CH3(CH2)11SAu SAMs of differing ionic permeability. (a) Capacitive complex plane plot.

(b) Bode plot of the real component C′. (c) Bode plot of the imaginary component C′′: dark

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symbols are the raw data and light symbols are the data after subtraction of Re. (d)

Complex plane plot of the relative permittivity. (e) Bode plot of the real component ϵ′. (f)

Bode plot of the imaginary component ϵ′′. Symbols are the experimental data and solid

lines are the results of CNLS fits of the impedance data using the equivalent circuit Re +

RSAM∥CPE.

Figure 4. Immittance spectra of gold electrodes modified with CH3(CH2)nS of n = 9, 11,

13, 15,17, and 19. (a)–(c) Impedance, (d)–(f) capacitance, and (g)–(i) relative permittivity.

Impedance spectra were acquired at -0.185 V vs Ag/AgCl in 1.0 M NaClO4(aq). Symbols are the

experimental data and solid lines are the results of CNLS fits of the impedance data using the

equivalent circuit Re + RSAM∥CPE.

Figure 5. Chain length dependence of (a) reciprocal of the capacitance C-1 (CT-1 or C0.1Hz-

1) and (b) SAM dielectric constant ϵSAM determined from CT or C0.1 Hz and the SAM

thickness calculated for all-trans extended chains tilted by 30o from the surface normal.

Each data point is the mean value of at least 12 different SAMs. Error bars represent the

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95% confidence intervals. Dashed line in (a) is a linear regression of the CT-1 vs n data:

r2 = 0.9984. Dashed line in (b) is a guide to the eye.

Figure 6. Comparison of the chain length dependencies of the static contact angle of

water and SAM dielectric constant ϵSAM. Inset shows the contact angle of a sessile

water drop on the SAM-functionalized gold surface. Each data point for is the mean

value of at least 4 different SAMs. Error bars represent the 95% confidence intervals.

Dashed line is a guide to the eye.

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Table 1. Impedance of Helmholtz- and Randles-type circuits53, 54

𝑍′(𝜔) =𝑐𝛼

𝑇𝜔𝛼 + 𝑅e Z(ω) =𝑅SAM (1 + (ωTRSAM)αcα)

1 + 2(ωTRSAM)αcα + (ωTRSAM)2α + 𝑅e

𝑍(𝜔) = ―𝑠𝛼

𝑇𝜔𝛼

Z(ω) =𝑅SAM(ωTRSAM)αsα

1 + 2(ωTRSAM)αcα + (ωTRSAM)2α

The angular frequency ω = 2πf, where f is the frequency in Hz. T and are the CPE parameter and exponent (eq 5). c = cos(/2) and s = sin(/2).

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Table 2. Conversion of the measured impedance to capacitance and relative permittivity10, 31, 38

ω = 2πf, where f is the frequency in Hz. o is the permittivity of free space (8.85419 × 10-

12 F m-1), A is the electrode area, and d is the film thickness.

Complex quantity Real part Imaginary part

Ĉ() = C′() + jC″() C'() = ― Z()ωZ(ω)2

C″() = ― Z()ωZ(ω)2

() = ϵ′() + 𝜖

jϵ″()𝜖(ω) = ― Z()

ωZ(ω)2 d

oA𝜖(ω) = ― Z()

ωZ(ω)2 d

oA

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Table 3. Fitted results of the Randles circuit elements for CH3(CH2)11SAu SAMs exhibiting different ionic insulating character

The

uncertainties in Re, RSAM, T, and are from the CNLS fits of the impedance data.

CPESAM Re

/ Ω cm2

RSAM

/ MΩ cm2T

/ μF sα-1 cm-

2

φ 1Hz / o

φ

0.1Hz / o

12.06±0.0

1380±293 1.09±0.01

0.9912±0.0001

89 89

23.07±0.0

112.9±0.3 1.09±0.00

0.9893±0.0001

88 83

32.73±0.0

33.9±0.1 1.31±0.02

0.9976±0.0001

87 73

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Canadian Journal of Chemistry