ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica...
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Transcript of ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica...
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
First Measurements on 3D Strips First Measurements on 3D Strips DetectorsDetectors
Irradiated at Irradiated at 1016 -1017 n/cm2
First Measurements on 3D Strips First Measurements on 3D Strips DetectorsDetectors
Irradiated at Irradiated at 1016 -1017 n/cm2
22nd RD50 WorkshopAlbuquerque, NM - June 3 – 5, 2013June 3 – 5, 2013
22nd RD50 WorkshopAlbuquerque, NM - June 3 – 5, 2013June 3 – 5, 2013
Virginia Greco Virginia Greco - - IMB-CNM, Barcelona (Spain)IMB-CNM, Barcelona (Spain)
Marta Baselga, Celeste Fleta, Manuel Lozano,Marta Baselga, Celeste Fleta, Manuel Lozano,Giulio Pellegrini, David QuirionGiulio Pellegrini, David Quirion
Virginia Greco Virginia Greco - - IMB-CNM, Barcelona (Spain)IMB-CNM, Barcelona (Spain)
Marta Baselga, Celeste Fleta, Manuel Lozano,Marta Baselga, Celeste Fleta, Manuel Lozano,Giulio Pellegrini, David QuirionGiulio Pellegrini, David Quirion
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
Geometry of the Geometry of the 33D Strip DetectorsD Strip DetectorsGeometry of the Geometry of the 33D Strip DetectorsD Strip Detectors
Biasing pads
80μm
50 channels, 80μm strip pitch280 μm of thickness180x75 μm passivation openings for wire bonding
100μm
33
0μ
m
46μm
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
p-type and n-type 3D detectors from different runs were irradiated at various fluences in Ljubljana.
# Run Strip length Type Fluence
1 5150-3 S2 5mm p-type 5·1016 n/cm2
2 5150-3 S4 5mm p-type 8·1016 n/cm2
3 4223-8 10mm p-type 1017 n/cm2
4 4223-2 10mm p-type 1017 n/cm2
5 4222-2 10mm n-type 1017 n/cm2
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
I-V Curves (I-V Curves (1016 n/cm2))I-V Curves (I-V Curves (1016 n/cm2))
p-typeSize: 5mmFluence : 5·1016
n/cm2
p-typeSize: 5mmFluence : 8·1016
n/cm2
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
C-V Curves (C-V Curves (1016 n/cm2))C-V Curves (C-V Curves (1016 n/cm2))
p-typeSize: 5mmFluence : 5·1016
n/cm2
p-typeSize: 5mmFluence : 8·1016
n/cm2
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
T = - 40° Cf = 10 kHz
?
?
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
I-V Curves (I-V Curves (1017 n/cm2))I-V Curves (I-V Curves (1017 n/cm2))
p-typeSize: 10mmFluence : 1017 n/cm2
p-typeSize: 10mmFluence : 1017 n/cm2
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
C-V Curves (C-V Curves (1017 n/cm2))C-V Curves (C-V Curves (1017 n/cm2))
p-typeSize: 10mmFluence : 1017 n/cm2
p-typeSize: 10mmFluence : 1017 n/cm2
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
T = - 40° Cf = 10 kHz
?
?
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
I-V & C-V Curves (I-V & C-V Curves (1017 n/cm2 -n--n-type)type)
I-V & C-V Curves (I-V & C-V Curves (1017 n/cm2 -n--n-type)type)
n-typeSize: 10mmFluence : 1017 n/cm2
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
T = - 40° Cf = 10 kHz
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
Characterization with Characterization with the ALIBAVA Readout Systemthe ALIBAVA Readout System
Characterization with Characterization with the ALIBAVA Readout Systemthe ALIBAVA Readout System
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
The ALIBAVA SetupThe ALIBAVA SetupThe ALIBAVA SetupThe ALIBAVA Setup
OutlineOutline LabLab
Inside the box
Inside the box
Daughterboard
(Beetle chip)
Daughterboard
(Beetle chip)
Trigger Board (diode)
Trigger Board (diode)
3D Pixel Sensors
(230 μm thick)
3D Pixel Sensors
(230 μm thick)
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
R1 = 1MΩR2 = 1MΩ R3 = 10MΩ C1 = C2 = C3 = 10pF
123NDC strips
R1
C1
R2
R3
C2
C3
PCB board
V
AC Pitch AdaptorsAC Pitch AdaptorsAC Pitch AdaptorsAC Pitch Adaptors
In order to perform measurements on the 3D irradiated detectors (strips and pixels) we need AC pitch adaptors.
Daughter board
DC Detector
AC Fan InAC Fan InAC Fan InAC Fan In
1cm RC
filter
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
Fabrication run of AC pitch adaptors in progress. Expected for the end of July
Mask
AC Fan-ins
Spare room used for fabricating chip heaters
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
Detector biasChipDetector
Glass substrate
1st metal Poly resistor2nd metal
30
0μ
m
AC Pitch LayoutAC Pitch LayoutAC Pitch LayoutAC Pitch Layout
Oxide/Nitride/Oxide thickness (for the capacitor)
Resistance of polySi
Capacitance Area
Capacitance
200 nm
1 MΩ
50 x 4500 μm2
40 pF
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
Routing for Pixels Routing for Pixels Routing for Pixels Routing for Pixels
Routing FE-I4 Atlas Pixels to read with Beetle chip (ALIBAVA system)
DC coupled pads, pitch 80 μm
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
Preliminary Measurements onPreliminary Measurements on
Non-Irradiated 3D FE- INon-Irradiated 3D FE- I44 Pixel Pixel DetectorsDetectors
Preliminary Measurements onPreliminary Measurements on
Non-Irradiated 3D FE- INon-Irradiated 3D FE- I44 Pixel Pixel DetectorsDetectors
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
Measurements on Non-Irradiated Measurements on Non-Irradiated 33D PixelsD Pixels
Measurements on Non-Irradiated Measurements on Non-Irradiated 33D PixelsD Pixels
30V20V15V10V 5V 3V
0,5V
Pulse reconstructed with the ALIBAVA System
S/N >5
20V
The rise time of the signal is given by the Beetle chip. The relative peak position is due to the variation of the collection velocity with the applied voltage.
β-source: Sr-90 MIPs; External trigger
(in collaboration with IFIC)
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
Collection Relative Time and Charge Collectedas a function of the detector power supply
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
Greco Virginia
ALBA Synchrotron – 17 June 2010
Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona
Conclusions & Future workConclusions & Future workConclusions & Future workConclusions & Future work
A primary electrical characterization of irradiated 3D strips sensors has been performed.The ALIBAVA readout system has been used to characterize non-irradiated 3D FE-I4 pixel sensors.
We foresee to finish by the end of June the fabrication process of the AC pitch adaptors;
Once the AC adaptors are ready, we will proceed by characterizing irradiated 3D strips and pixel sensors with the ALIBAVA system:
charge collection studies with MIPs;annealing studies;laser measurements.
22nd RD50 Workshop - Albuquerque, NM - June 3 – 5, June 3 – 5, 20132013
Greco Virginia