Advances and Challenges in Chemical Mechanical...

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Advances andChallenges in Chemical

Mechanical Planarization

www.cambridge.org© in this web service Cambridge University Press

Cambridge University Press978-1-107-40870-8 - Advances and Challenges in Chemical Mechanical Planarization: MaterialsResearch Society Symposium Proceedings: Volume 991Editors: Gerfried Zwicker, Christopher Borst, Laertis Economikos and Ara Philipossian

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www.cambridge.org© in this web service Cambridge University Press

Cambridge University Press978-1-107-40870-8 - Advances and Challenges in Chemical Mechanical Planarization: MaterialsResearch Society Symposium Proceedings: Volume 991Editors: Gerfried Zwicker, Christopher Borst, Laertis Economikos and Ara Philipossian

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MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 991

Advances andChallenges in Chemical

Mechanical Planarization

Symposium held April 10-12, 2007, San Francisco, California, U.S.A.

EDITORS:

Gerfried ZwickerFraunhofer Institute for Silicon Technology ISIT

Itzehoe, Germany

Christopher BorstUniversity at Albany

Albany, New York, U.S.A.

Laertis EconomikosIBM Microelectronics

Hopewell Junction, New York, U.S.A.

Ara PhilipossianThe University of ArizonaTucson, Arizona, U.S.A.

IMIRIS1Materials Research Society

Warrendale, Pennsylvania

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Cambridge University Press978-1-107-40870-8 - Advances and Challenges in Chemical Mechanical Planarization: MaterialsResearch Society Symposium Proceedings: Volume 991Editors: Gerfried Zwicker, Christopher Borst, Laertis Economikos and Ara Philipossian

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cambridge university press Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, São Paulo, Delhi, Mexico City

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Cambridge University Press978-1-107-40870-8 - Advances and Challenges in Chemical Mechanical Planarization: MaterialsResearch Society Symposium Proceedings: Volume 991Editors: Gerfried Zwicker, Christopher Borst, Laertis Economikos and Ara Philipossian

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CONTENTS

Preface xi

Materials Research Society Symposium Proceedings xii

POLISHING PAD AND CONDITIONINGDISC CHARACTERIZATION AND

WEAR MECHANISMS

* CMP Active Diamond Characterization and ConditionerWear 3

Leonard Borucki, Rumin Zhuang, Yun Zhuang,Ara Philipossian, and Naoki Rikita

The Impact of Diamond Conditioning on Surface Contactin CMP Pads 15

Carolina L. Elmufdi and Gregory P. Muldowney

Surface Chemical Characteristics of CMP Polyurethane Pads 21Hongqi Xiang, Abaneshwar Prasad, and Edward E. Remsen

Determining Pad-Wafer Contact Using Dual Emission LaserInduced Fluorescence 27

Caprice Gray, Chris Rogers, Vincent P. Manno,Robert White, Mansour Moinpour, and Sriram Anjur

Computational Solid Mechanics Modeling of AsperityDeformation and Pad-Wafer Contact in CMP 39

Bo Jiang and Gregory P. Muldowney

Investigation of Diamond Grit Size and ConditioningForce Effect on CMP Pads Topography 45

Ting Sun, Leonard Borucki, Yun Zhuang, andAra Philipossian

POST-CMP CLEANING

* Fundamentals of Post-CMP Cleaning 53Jin-Goo Park and Tae-Gon Kim

*Invited Paper

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Spectroscopic and Topographic Investigations ofNanoparticle Abrasive Retention in PolyurethaneCMP Pads for Cu CMP 65

Iftikhar Ul-hasan and Robert Geer

Influence of Post-CMP Cleaning on Cu Surface 71Jeffrey Barnes, Peng Zhang, and Alfred Miller

CONSUMABLES FOR ULTRA-LOWTOPOGRAPHY AND ADVANCED

BARRIER METALLIZATION

* Newly Developed Abrasive-Free Copper CMP SlurryBased on Electrochemical Analysis 79

Jin Amanokura, Katsumi Mabuchi, Takafumi Sakurada,Yutaka Nomura, Masanobu Habiro, and Haruo Akahoshi

ADVANCES IN SLURRY PARTICLEMECHANICS, SURFACE CHEMISTRY,

AND METROLOGY

* AFM Investigations of Chemical-Mechanical Processes onSilicon(lOO) Surfaces 93

Ruiji Imoto, Forrest Stevens, Steven Langford, andTom Dickinson

* Particle Metrology in CMP Slurries—Potential and Limitationsof Relevant Measuring Methods 107

Michael Stintz, Herbert Barthel, and Mansour Moinpour

Advances in the Characterization of Particle SizeDistributions of Abrasive Particles Used in CMP 119

Mungai Kamiti, Stacey Popadowski, andEdward E. Remsen

Low Defect Ceria for ILD CMP 125Jai Kasthurirangan, John Parker, Tiffany Bettis,and Charles Dowell

* Invited Paper

VI

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CHEMICAL AND PHYSICALMECHANISMS OF METAL

AND DIELECTRIC CMP

Measurement of Interactions Between Abrasive SilicaParticles and Copper, Titanium, Tungsten and Tantalum 133

Ruslan Burtovyy, Alex Tregub, Mansour Moinpour,Mark Buehler, and Igor Luzinov

Influence of Microstructure on Aggressive ChemicalMechanical Planarization Processes for Thick CopperFilms 139

Patrick J. Andersen and Megan Frary

Particles as Transport Carriers in CMP Slurries 145Daniela White, John Parker, Shuyou Li, andVinayak Dravid

CMP UNIT PROCESSSIMULATION AND MONITORING

k Advances in Understanding and Control of CMPPerformance: Contact-Hydrodynamics at Wafer,Groove, and Asperity Scale 153

Gregory P. Muldowney

Experimental Investigation and Numerical Simulationof Pad Stain Formation During Copper CMP 165

Hyosang Lee, Yun Zhuang, Leonard Borucki,Fergal O'Moore, Sooyun Joh, and Ara Philipossian

Micromachined Shear Stress Sensors for Characterizationof Surface Forces During Chemical Mechanical Polishing 171

Andrew Mueller, Robert White, Vincent Manno,Chris Rogers, Sriram Anjur, and Mansour Moinpour

An Approach to Modeling Particle-Based and Contact-Based Wear in CMP 183

Elon Jahdal Terrell, Michael Kuo, and C. Fred Higgs

* Invited Paper

vn

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ALTERNA TIVE PLAN ARIZ A TIONTECHNIQUES AND CMP IN

EMERGING TECHNOLOGIES

High Rate Silicon Carbide Polishing to Ultra-Smooth Surfaces 207Michael L. White, Kevin Moeggenborg, Francois Batllo,Jeffrey Gilliland, and Nevin Naguib

CMP DEFECT ANDCORROSION MECHANISMS

* Cu Post-CMP Displacement Cleaning: A MechanisticProduct Development Approach Based on SelectedThermodynamic and Kinetic Data 215

Darryl W. Peters

Nano-Scale Characterization of Surface Defects onCMP-Finished Si Wafers by Scanning Probe MicroscopyCombined with Laser Light Scattering 227

Kenta Arima, Takushi Shigetoshi, Haruyuki Inoue,Tsukasa Kawashima, Takaaki Hirokane,Toshihiko Kataoka, and Mizuho Morita

Screening Study on Frictional Force Analysis in Relationto Silica Abrasive and Slurry Properties 233

Yun Zhuang, Yasa Adi Sampurno, Fransisca Sudargho,Geoff Steward, Herbert Barthel, Erwin-Peter Mayer,Torsten Gottschalk-Gaudig, Michael Stintz, Uwe Kaetzel,Andre Nogowski, Michael Goldstein, and Ara Philipossian

Composite Polymer Core - Ceria Shell Abrasive ParticlesDuring Silicon Oxide CMP 239

Silvia Armini, Joke De Messemaeker, Ruslan Burtovyy,Igor Luzinov, Caroline M. Whelan, Mansour Moinpour,and Karen Maex

POSTER SESSION

New Particle Metrology for CMP Slurries 249S. Kim R. Williams, Ilyong Park, Edward E. Remsen,and Mansour Moinpour

*Invited Paper

Vlll

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Improved Defect Classification Techniques of a LaserScattering Detection System for Post CMP Silicon DioxideWafers , 255

Daniel Mateja, Toshi Kasai, Michael Denham, andHaresh Siriwardane

Surfactants in Controlling Removal Rates and Selectivityin Barrier Slurry for Cu CMP 261

Jinru Bian

A Study in Selectivity Variations of WCMP Slurries Relatedto pH, ^-Potential and Dilutions with De-Ionized Water 267

Davide Gianni, Silvia Ardizzone, Giuseppe Cappelletti,Angelo Maspero, Damiano Monticelli, Giulia Spinolo,and Norberto Masciocchi

Effect of Wettability of Poly Silicon on CMP Behavior 275Young-Jae Kang, Bong-Kyun Kang, In-Kwon Kim,Jin-Goo Park, Yi-Koan Hong, Sang-Yeob Han,Seong-Kyu Yun, Bo-Un Yoon, and Chang-Ki Hong

CHALLENGES IN CMPINTEGRATION AND RELIABILITY

FOR 45 nm AND BEYOND

Development and Optimization of Slurry for Ru CMP 283In-Kwon Kim, Tae-Young Kwon, Jin-Goo Park,and Hyung-Soon Park

TOOL/PROCESS DEVELOPMENTSSUCH AS ECMP AND

LOW-SHEAR CMP

* Enabling Damascene Solutions for 45 nm Beyond 291Manabu Tsujimura

Effects of Additives in KOH Based Electrolytes on CuECMP 303

Tae-Young Kwon, In-Kwon Kim, and Jin-Goo Park

*Invited Paper

IX

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ECMP Enhances the Planarization Efficiency—A Phenomenonof Reverse Topography During Cu Removal 309

Feng Q. Liu, Wei-Yung Hsu, Alain Duboust, and Liang Chen

Wafer Level Modeling of Electrochemical-MechanicalPolishing (ECMP) 315

Daniel Truque, Xiaolin Xie, and Duane Boning

ADVANCED CMP PROCESSCONTROL TECHNIQUES

Application of Scatterometry to BEOL Measurements:Post Cu CMP Measurements 323

Deepak Kulkarni, Shorn Ponoth, Li Wu, Rui Fang,Xiaoping Liu, and Alex Elia

MULTI-SCALE MODELINGOF FEATURE EVOLUTION

DURING CMP

* On a Particle-Augmented Mixed Lubrication Approach toPredicting CMP 333

C. Fred Higgs, Elon J. Terrell, Michael Kuo,Joseph Bonivel, and Sarah Biltz

Contact Model for a Pad Asperity and a Wafer Surface inthe Presence of Abrasive Particles for Chemical MechanicalPolishing 343

Dincer Bozkaya and Sinan Muftu

Single Asperity Tribochemical Wear of Silicon by AtomicForce Microscopy 349

Futoshi Katsuki

Towards a Quantitative Description of Pattern-DependentPlanarization with Ceria Slurries 355

Roland Rzehak and Thomas Vogel

Author Index 369

Subject Index 371

*Invited Paper

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PREFACE

Chemical mechanical planarization (CMP) has been a leading-edge technology in semiconductorprocessing for the past 15-20 years. A successful CMP process is based in fundamental science acrossthe disciplines of mechanical engineering (wear, friction, slip, localized heating), chemical engineering(fluid flow, surface tension, surface reaction kinetics), colloid science (particle interactions, motion,agglomeration), materials science (polishing pad hardness, compressibility, abrasive indentation),and chemistry (oxidation/reduction reactions, complexing agents, electro-chemical mechanisms).Traditionally, the MRS Spring Meeting serves as a nexus for multi-disciplinary interaction anddiscussion between CMP researchers in both industry and academia.

The papers in this proceedings were presented at Symposium C, "Advances and Challengesin Chemical Mechanical Planarization," held April 10-12 at the 2007 MRS Spring Meeting inSan Francisco, California. The papers cover polishing pads, conditioning discs, wear mechanisms,post-CMP cleaning, chemical and physical mechanisms of metal and dielectric CMP, alternativeplanarization techniques, CMP in emerging technologies, CMP related defects, electrochemicalmechanical planarization (ECMP), low-shear CMP, process control and modeling of featureevolution during CMP. Besides the invited papers, which present scientific summaries andoverviews of important CMP topics, the oral and poster contributions show exciting snapshotsof on-going work in a field with high relevance to microelectronics manufacturing.

Gerfried ZwickerChristopher BorstLaertis EconomikosAra Philipossian

July 2007

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Cambridge University Press978-1-107-40870-8 - Advances and Challenges in Chemical Mechanical Planarization: MaterialsResearch Society Symposium Proceedings: Volume 991Editors: Gerfried Zwicker, Christopher Borst, Laertis Economikos and Ara Philipossian

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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 989— Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2007, V. Chu,S. Miyazaki, A. Nathan, J. Yang, H.W. Zan, 2007, ISBN 978-1-55899-949-7

Volume 990— Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- andNanoelectronics, Q. Lin, E.T. Ryan, W-L. Wu, D.Y. Yoon, 2007, ISBN 978-1-55899-950-3

Volume 991— Advances and Challenges in Chemical Mechanical Planarization, C. Borst, L. Economikos,A. Philipossian, G. Zwicker, 2007, ISBN 978-1-55899-951-0

Volume 992E—Deposition onNonplanar Substrates, D. Josell, M. Brett, C. Witt, M. Ritala, 2007,ISBN 978-1-55899-952-7

Volume 993E— Pb-Free and RoHS-Compliant Materials and Processes for Microelectronics, E. Chason, 2007,ISBN 978-1-55899-953-4

Volume 994— Semiconductor Defect Engineering—Materials, Synthetic Structures and Devices II, S. Ashok,P. Kiesel, J. Chevallier, T. Ogino, 2007, ISBN 978-1-55899-954-1

Volume 995E—Extending Moore's Law with Advanced Channel Materials, S. Chakravarthi, R. Arghavani,G. Klimeck, 2007, ISBN 978-1-55899-955-8

Volume 996E—Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies, Y. Chabal,A. Esteve, N. Richard, G. Wilk, 2007, ISBN 978-1-55899-956-5

Volume 997— Materials and Processes for Nonvolatile Memories II, T. Li, Y. Fujisaki, J. Slaughter,D. Tsoukalas, 2007, ISBN 978-1-55899-957-2

Volume 998E —Nanoscale Magnetics and Device Applications, S.S. Xue, 2007, ISBN 978-1-55899-958-9Volume 999E —Novel Semiconductor Materials for Room-Temperature Ferromagnetism, C.R. Abernathy,

S. Bedair, P. Ruterana, R. Frazier, 2007, ISBN 978-1-55899-959-6Volume 1000E—Functional Interfaces in Oxides, 2007, ISBN 978-1-55899-960-2Volume 1001E—Progress in High-Temperature Superconductors, P. Barnes, D. Lee, C. Park, N. Amemiya,

J. Reeves, 2007, ISBN 978-1-55899-961-9Volume 1002E—Printing Methods for Electronics, Photonics, and Biomaterials, G. Gigli, 2007,

ISBN 978-1-55899-962-6Volume 1003E—Organic Thin-Film Electronics—-Materials, Processes, and Applications, A.C. Arias,

J.D. MacKenzie, A. Salleo, N. Tessler, 2007, ISBN 978-1-55899-963-3Volume 1004E—Materials and Strategies for Lab-on-a-Chip—Biological Analysis, Microfactories, and Fluidic

Assembly of Nanostructures, S. Grego, J.M. Ramsey, O. Velev, S. Verpoorte, 2007,ISBN 978-1-55899-964-0

Volume 1005E—Advances in Photo-Initiated Polymer Processes and Materials, A. Guymon, C. Hoyle,M. Shirai, E. Nelson, 2007, ISBN 978-1-55899-965-7

Volume 1006E—Transport Behavior in Heterogeneous Polymeric Materials and Composites, J. Grunlan,D. Bhattacharyya, E. Marand, O. Regev, A. Balazs, 2007, ISBN 978-1-55899-966-4

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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 1007— Synthesis, Processing, and Properties of Organic/Inorganic Hybrid Materials, R.M. Laine,C. Sanchez, C. Barbe, U. Schubert, 2007, ISBN 978-1-55899-967-1

Volume 1008E—The Nature of Design—Utilizing Biology's Portfolio, R.R. Naik, C.C. Perry, K. Shiba,R. Ulijn, 2007, ISBN 978-1-55899-968-8

Volume 1009E—Advanced Materials for Neuroprosthetic Interfaces, D.R. Kipke, S.P. Lacour, B. Morrison III,D. Tyler, 2007, ISBN 978-1-55899-969-5

Volume 1010E—Functional Materials for Chemical and Biochemical Sensors, E. Comini, P-I. Gouma, V. Guidi,X-D. Zhang, 2007, ISBN 978-1-55899-970-1

Volume 101 IE—Materials for Architecture, D.S. Ginley, K.E. Uhrich, BJ. Faircloth, J-J. Kim, 2007,ISBN 978-1-55899-971-8

Volume 1012— Thin-Film Compound Semiconductor Photovoltaics—2007, T. Gessert, K. Durose, S. Marsillac,T. Wada, C. Heske, 2007, ISBN 978-1-55899-972-5

Volume 1013E—Organic and Nanoparticle Hybrid Photovoltaic Devices, 2007, ISBN 978-1-55899-973-2Volume 1014E—Three-Dimensional Nano- and Microphotonics, P.V. Braun, S. Fan, AJ. Turberfield, S-Y. Lin,

2007, ISBN 978-1-55899-974-9Volume 1015E—Hybrid Functional Materials for Optical Application, A. Cartwright, T.M. Cooper, A. Koehler,

K.S. Schanze, 2007, ISBN 978-1-55899-975-6Volume 1016E—Materials and Material Structures Enabling Terahertz Technology, E. Stutz, I. Wilke,

K. Kreischer, Q. Hu, 2007, ISBN 978-1-55899-976-3Volume 1017E—Low-Dimensional Materials—Synthesis, Assembly, Property Scaling, and Modeling,

M. Shim, M. Kuno, X-M. Lin, R. Pachter, S. Kumar, 2007, ISBN 978-1-55899-977-0Volume 1018E—Applications of Nanotubes and Nanowires, L. Chen, M. Hersam, 2007,

ISBN 978-1-55899-978-7Volume 1019E—Engineered Nanoscale Materials for the Diagnosis and Treatment of Disease, V.A. Hackley,

A.K. Patri, J. Stein, B.M. Moudgil, 2007, ISBN 978-1-55899-979-4Volume 1020— Ion-Beam-Based Nanofabrication, D. ILA, J. Baglin, N. Kishimoto, P.K. Chu, 2007,

ISBN 978-1-55899-980-0Volume 102IE—Surface and Interfacial Nanomechanics, R.F. Cook, W. Ducker, I. Szlufarska, R.F. Antrim,

2007, ISBN 978-1-55899-981-7Volume 1022E—Nanoscale Heat Transport—From Fundamentals to Devices, S.R. Phillpot, S. Volz,

T. Borca-Tasciuc, M. Choi, 2007, ISBN 978-1-55899-982-4Volume 1023E—Functional Nanoscale Ceramics for Energy Systems, E. Ivers-Tiffee, S. Barnett, 2007,

ISBN 978-1-55899-983-1

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society

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