Advance Program International Workshop on Nitride ... · Advance Program International Workshop on...

Advance Program

International Workshop on Nitride Semiconductors

(IWN 2018)

November 11–16, 2018

Ishikawa Ongakudo, ANA Crowne Plaza Hotel Kanazawa, & Motenashi-Dome, Kanazawa, Japan

Important Dates: Deadline for Early Registration: October 1, 2018 (JST) Deadline for Late News Paper Submission: September 14, 2018

http://www.iwn2018.jp

Sponsored by

“Materials Science and Advanced Electronics Created by Singularity”, MEXT-KAKENHI on Innovative Areas, FY2016-2020

The Japanese Association for Crystal Growth

Co-Sponsored by

The Japan Society of Applied Physics

The 161st Committee on Science and Technology of Crystal Growth, Japan Society for the Promotion of Science

The 162nd Committee on Wide Bandgap Semiconductor Photonic and Electronic Devices, Japan Society for the Promotion of Science

Consortium for GaN Research and Applications

Special Thanks

Kanazawa Convention Bureau

Ishikawa Prefecture

City of Kanazawa

Foundations (Tentative)

Ichimura Foundation for New Technology

The Murata Science Foundation

The Telecommunications Advancement Foundation

Sponsoring Companies (Tentative)

Banquet Sponsor

Welcome Reception Sponsor

Light Meal Sponsor

Coffee Break Sponsors

Sponsors

SONY Corporation

Special thanks

SUMITOMO METAL MINING CO., LTD

Exhibition (Tentative)

Luncheon seminars (Tentative)

Advertisements (Tentative)

Workshop Committees

Steering Committee Chair: Yoichi Kawakami (Kyoto Univ., Japan) Vice Chairs: Masaaki Kuzuhara (Univ. of Fukui, Japan) Hideto Miyake (Mie Univ., Japan) Takashi Mukai (Nichia Corp., Japan) Koji Shiozaki (Nagoya Univ./Toyota Motor Corp., Japan) General Affairs: Yoshio Honda (Nagoya Univ., Japan) Motoaki Iwaya (Meijo Univ., Japan) Ryota Ishii (Kyoto Univ., Japan) Hisashi Murakami (Tokyo Univ. Agr. & Tech., Japan) Members:

Toru Akiyama (Mie Univ., Japan) Yasufumi Fujiwara (Osaka Univ., Japan) Masataka Imura (NIMS, Japan) Satoshi Kamiyama (Meijo Univ., Japan) Yoshihiro Kangawa (Kyushu Univ., Japan) Ryuji Katayama (Osaka Univ., Japan) Takahiro Kawamura (Mie Univ., Japan) Narihito Okada (Yamaguchi Univ., Japan) Yoshiki Saito (TS Opto Co., Ltd., Japan) Hiroto Sekiguchi (Toyohashi Univ. Tech., Japan) Tomoyuki Tanikawa (Tohoku Univ., Japan) Jun Tatebayashi (Osaka Univ., Japan)

Program Committee Chair: Hiroshi Fujioka (Univ. of Tokyo, Japan) Vice Chairs: Yusuke Mori (Osaka Univ., Japan) Jun Suda (Nagoya Univ., Japan) Tetsuya Takeuchi (Meijo Univ., Japan) Yoichi Yamada (Yamaguchi Univ., Japan) General Affairs: Mark Holmes (Univ. of Tokyo, Japan) Atsushi Kobayashi (Univ. of Tokyo, Japan) Maki Kushimoto (Nagoya Univ., Japan) Kazuyuki Uno (Wakayama Univ., Japan) Members: Andrew A. Allerman (Sandia National Labs., USA)

Munetaka Arita (Univ. of Tokyo, Japan) Matthias Bickermann (Leibniz Inst. for Crystal Growth, Germany) Ron Birkhahn (Transphorm, USA) Michal Bockowski (UNIPRESS, Poland)

Colombo Bolognesi (ETH-Zürich, Switzerland) Julien Brault (CRHEA-CNRS, France) Raphaël Butté (EPFL, Switzerland) Enrique Calleja (Tech. Univ. of Madrid, Spain) Yu Cao (Qorvo, USA) Srabanti Chowdhury (Univ. of California, Davis, USA) Gilberto Curatola (Infineon Technologies, Austria) Theeradetch Detchprohm (Georgia Inst. of Tech., USA) Momoko Deura (Univ. of Tokyo, Japan) Alan Doolittle (Georgia Inst. of Tech., USA) Jean-Yves Duboz (CRHEA-CNRS, France) Daniel Feezell (Univ. of New Mexico, USA) Jung Han (Yale Univ., USA) Andreas Hangleiter (Technische Univ. Braunschweig, Germany) Naoki Hara (Fujitsu Labs., Japan) Tamotsu Hashizume (Hokkaido Univ., Japan) Hideki Hirayama (RIKEN, Japan) Colin Humphreys (Univ. of Cambridge, UK) Yoshihiro Ishitani (Chiba Univ., Japan) Sergey Ivanov (Ioffe Inst., Russia) Debdeep Jena (Cornell Univ., USA) Ryuji Katayama (Osaka Univ., Japan) Stacia Keller (Univ. of California, Santa Barbara, USA) Jong Kyu Kim (Pohang Univ. of Sci. and Tech., Korea) Michael Krames (ARKESSO, USA) Martin Kuball (Univ. of Bristol, UK) Yoshinao Kumagai (Tokyo Univ. Agr. & Tech., Japan) Hao-chung Kuo (National Chiao Tung Univ., Taiwan) Pierre Lefebvre (Univ. of Montpellier, France) Xiaohang Li (King Abdullah Univ. of Sci. and Tech., Saudi Arabia) Jianping Liu (Suzhou Inst. of Nano-Tech and Nano-Bionics, China) Yang Liu (Sun Yat-Sen Univ., China) Tien-Chang Lu (National Chiao Tung Univ., Taiwan) Hans-Jürgen Lugauer (OSRAM Opto Semiconductors, Germany) Robert Martin (Univ. of Strathclyde, UK) Koh Matsumoto (Taiyo Nippon Sanso, Japan) Matteo Meneghini (Univ. of Padova, Italy) Zetian Mi (Univ. of Michigan, USA) Eva Monroy (Centre d'études nucléaires de Grenoble, France) Hideaki Murotani (Nat. Inst. of Tech., Tokuyama College, Japan) Satoshi Nakazawa (Panasonic, Japan) Sergei Novikov (Univ. of Nottingham, UK) Piotr Perlin (UNIPRESS, Poland) Siddharth Rajan (Ohio State Univ., USA) Akira Sakai (Osaka Univ., Japan) Lars Samuelson (Lund Univ., Sweden)

Leo J. Schowalter (Crystal IS, USA) Ulrich T. Schwarz (Technische Univ. Chemnitz, Germany) Jong-In Shim (Hanyang Univ., Korea) Kanako Shojiki (Mie Univ., Japan) Zlatko Sitar (North Carolina State Univ., USA) Chang Soo Suh (Texas Instruments Inc., USA) Shigetaka Tomiya (Sony, Japan) Xinqiang Wang (Peking Univ., China) Tim Wernicke (Technische Univ. Berlin, Germany) Christian Wetzel (Rensselaer Polytechnic Inst., USA) Jonathan J. Wierer (Lehigh Univ., USA) Yuh-Renn Wu (National Taiwan Univ., Taiwan) Huili Grace Xing (Cornell Univ., USA) Euijoon Yoon (Seoul National Univ., Korea) Baoping Zhang (Xiamen Univ., China)

Local Arrangement Committee Chair: Atsushi A. Yamaguchi (Kanazawa Inst. Tech., Japan) Vice Chairs: Mitsuru Funato (Kyoto Univ., Japan) Kazuhiko Hara (Shizuoka Univ., Japan) Members: Tsutomu Araki (Ritsumeikan Univ., Japan) Manato Deki (Nagoya Univ., Japan) Takumi Ikenoue (Kyoto Univ., Japan) Toshiharu Kubo (Nagoya Inst. Tech., Japan) Tetsuya Kono (Shizuoka Univ., Japan) Takayuki Nakano (Shizuoka Univ., Japan) Masahiro Uemukai (Osaka Univ., Japan)

Publication Committee Chair: Shigefusa F. Chichibu (Tohoku Univ., Japan) Vice Chair: Yoshinao Kumagai (Tokyo Univ. Agr. & Tech., Japan) Members: Kazunobu Kojima (Tohoku Univ., Japan) Momoko Deura (Univ. of Tokyo, Japan)

International Advisory Committee Honorary Chair: Isamu Akasaki (Meijo Univ./ Nagoya Univ., Japan) Chair: Hiroshi Amano (Nagoya Univ., Japan) Co-Chair: Bernard Gil (Montpellier 2 Univ., France) Vice Chair: Akihiko Yoshikawa (Chiba Univ., Japan) Members: Jen-Inn Chyi (National Central Univ. Taiwan) Russell Dupuis (Georgia Inst. of Tech., USA) Asif Khan (Univ. of South Carolina, USA) Katsumi Kishino (Sophia Univ., Japan) Zetian Mi (Univ. of Michigan, USA) Umesh K. Mishra (Univ. of California, Santa Barbara, USA) Hadis Morkoc (Virginia Commonwealth Univ., USA) Yasushi Nanishi (Ritsumeikan Univ., Japan) Nicolas Grandjean (EPFL, Switzerland) Izabella Grzegory (UNIPRESS, Poland) Sergey Ivanov (Ioffe Inst., Russia) Michael Kneissl (Tech. Univ. of Berlin, Germany) Rachel Oliver (Univ. of Cambridge, UK) Kentaro Onabe (Univ. of Tokyo, Japan) Peter Parbrook (Tyndall National Inst., Ireland) Song-Ju Park (Gwangju Inst. of Sci. and Tech., Korea) Fernando Ponce (Arizona State Univ., USA) Bo Shen (Peking Univ., China) Zlatko Sitar (North Carolina State Univ., USA) Maria Tchernycheva (Univ. Paris-Sud, CNRS, France) Andreas Waag (Tech. Univ. Braunschweig, Germany) Hui Yang (SINANO, CAS, China) Euijoon Yoon (Seoul National Univ., Korea)

Plenary Speakers

Hiroshi Amano (Nagoya University, Japan) Blue LEDs and Transformative Electronics for Developing Sustainable Smart Society Michael Kneissl (Technische Universität Berlin, Germany) Exploring the Wavelength Limits of AlGaN-Based Deep UV LEDs Tomás Palacios (Massachusetts Institute of Technology, USA) Gallium Nitride and the New Computer Revolution Tetsuzo Ueda (Panasonic, Japan) GaN Power Devices: Current Status and Future Challenges Koji Shiozaki (Nagoya University, on leave from Toyota Motor, Japan) Challenge for GaN-based Electronics on Future Mobility

Invited speakers (Tentative) Tetsuya Akasaka (NTT Corporation, Japan) N-face (000-1) GaN/InN/GaN double-heterostructures emitting near-IR photoluminescence grown by metalorganic vapor phase epitaxy Andrew Allermann (Sandia National Laboratories, USA) Growth of power electronic devices based on Al-rich AlGaN alloys Yasuhiko Arakawa (The University of Tokyo, Japan) Progress in GaN quantum dots for lasers and single photon sources Matthias Bickermann (Leibniz Institute for Crystal Growth Berlin, Germany) On the preparation of AlN single crystals and substrates for AlGaN devices Michał Boćkowski (UNIPRESS, Poland) Combination of advantages of HVPE and ammonothermal methods as a solution for crystallization of GaN Bastien Bonef (University of California Santa Barbara, USA) Nanometer scale correlative structural investigation of alloy distributions in quaternary nitride (In,Al,Ga)N. Catherine Bougerol (CNRS, France) High-resolution compositional characterization of nanometer-scale nitride objects using atom-probe tomography

Peter Brueckner (Fraunhofer Institute for Applied Solid State Physics, Germany) IAF GaN-technology development towards 100 GHz and beyond

Raphaël Butté (EPFL, Switzerland) Role of growth mode induced fluctuations on the optical absorption edge broadening in thick InGaN epilayers

Kevin J. Chen (Hong Kong University of Science and Technology, China) GaN Power Integrated Circuits

Ramon Collazo (North Carolina State University, USA) High conductivity in Si implanted AlN

Aurelien David (SORAA, USA) Recombination physics in bulk GaN LEDs: recent insights

Amelie Dussaigne (Université Grenoble Alpes, France) Red electroluminescence with full InGaN based LED grown on InGaN pseudo-substrate

Patrick Fay (University of Notre Dame, USA) GaN Nanowire FETs for Low-Power Applications

Hajime Fujikura (SCIOCS, Japan) HVPE, a dark horse for GaN on GaN epitaxy

Nicolas Grandjean (EPFL, Switzerland) InGaN underlayer in LEDs: a trap for non-radiative defects

Tatsushi Hamaguchi (Sony, Japan) Continuous Wave operation of GaN-based VCSEL using an atomically smooth monolithic curved mirror

Andreas Hangleiter (Technical University of Braunschweig, Germany) Free excitons in III-nitride quantum wells at room temperature: Dynamics of formation and recombination

Mark Holmes (The University of Tokyo, Japan) The Single Photon Emission Dynamics of III-Nitride Quantum Dots

Chia-Yen Huang (National Chiao Tung University, Taiwan) Collective lasing in the InGaN core-shell nano-rod array

Daisuke Iida (King Abdullah University of Science and Technology, Saudi Arabia) High-In-content InGaN-based amber, orange, red light-emitting diodes

Masayuki Imanishi (Osaka University, Japan) GaN crystal growth by Na flux point seed method

Ryota Ishii (Kyoto University, Japan) Development of a deep-ultraviolet scanning nearfield optical microscope for nano-spectroscopic characterizations of AlxGa1-xN (x: 0∼1) active layers Yoshihiro Ishitani (Chiba University, Japan) Statistics of excitonic energy states based on phonon-exciton-radiation model Motoaki Iwaya (Meijo University, Japan) Realization of high photosensitivity AlGaN-based photosensors Kazutaka Kanegae (Kyoto University, Japan) Hole occupancy ratio of H1 trap in homoepitaxial n-type GaN under sub-bandgap light irradiation Yuta Kawase (Meijo University, Japan) UV laser fabricated on relaxed AlGaN high temperature annealed and sputtered AlN Sapphire templates Stacia Keller (University of California, Santa Barbara, USA) N-polar (Al,Ga,In)N/GaN heterostructures for transistor applications -expanding the device design space Isik Kizilyalli (U.S. Department of Energy, USA) Vertical Power Electronic Devices Based on Bulk GaN Substrates Christian Koller (KAI, Austria) The Role and Mechanism of C in insulating GaN Buffers Harald König (Osram Opto Semiconductors, Germany) Latest progress on single-mode and high-power blue to green laser diodes Elison Matioli (EPFL, Switzerland) Towards the limits of GaN power devices: new technologies to improve breakdown voltage, on-resistance and thermal management Gaudenzio Meneghesso (University of Padova, Italy) Reliability issues in p-type Gate GaN-Based HEMTs for Power Electronics Hisashi Murakami (Tokyo University of Agriculture and Technology, Japan) Recent progress in tri-halide vapor phase epitaxy of GaN-related materials Felix Nippert (Technische Universität Berlin, Germany ) Auger recombination in AlGaN quantum wells for deep UV light-emitting diodes Susumu Noda (Kyoto University, Japan) Photonic Crystal Lasers and Their Extension to Nitride Semiconductor Systems Peter Parbrook (University College Cork, Ireland) InAlN optoelectronic properties and potential application for Deep UVLEDs

Siddharth Rajan (Ohio State University, USA) Tunnel Injected UV Light Emitting Diodes Ian Rousseau (EPFL, Switzerland) Benchmarking visible emitting GaN-based photonic nanocavities: quality factor quantification and surface effects James S. Speck (University of California, Santa Barbara, USA) Progress Towards High Efficiency Green LEDs Makoto Saito (Tohoku University/Mitsubishi Chemical Corp., Japan) Recent progress of large size bulk GaN crystal growth by acidic ammonothermal method Akira Sakai (Osaka University, Japan) Defect characterization in nitride semiconductor bulk materials Leo J. Schowalter (Crystal IS, USA) 230 nm LED for nitrate sensing / Current Status and Challenges of UV LEDs Likun Shen (Transphorm, USA) GaN power electronics: progress in performance, reliability and applications Jong-In Shim (Hanyang University, Korea) Recombination dynamics and Internal Quantum Efficiency in InGaN LEDs Keisuke Shinohara (Teledyne Scientific and Imaging, USA) New material and device designs for the next generation nitride-based RF transistors Manikant Singh (University of Bristol, United Kingdom) Multiple drain-current-transient responses from the same trap: explanation using floating buffer model Zlatko Sitar (North Carolina State University, USA) Development of Low Threshold UVC Laser Diodes Shinya Takashima (Fuji Electric, Japan) Systematical investigation on GaN inversion MOSFETs on GaN substrate with epitaxial p-body and Mg-implanted p-body Hong X. Tang (Yale University, USA) UV to mid-IR frequency comb line generation from single IR pump in AlN microring resonator Takashi Taniguchi (NIMS, Japan) Hexagonal boron nitride single crystals / Growth of BN: expected functions via impurity control

Tomoyuki Tanikawa (Tohoku University, Japan) Nondestructive analysis of threading dislocations in HVPE-grown GaN crystals using multiphoton-excitation photoluminescence Carol Trager-Cowan (Strathclyde University, UK) Visualization and investigation of defects using electron channeling (electron diffraction) in the scanning electron microscope Lukas Uhlig (Chemnitz University of Technology, Germany) Longitudinal mode dynamics in green InGaN laser diodes during short pulse operation Andreas Waag (Technical University of Braunschweig, Germany) GaN fins by MOVPE: towards vertical FETs and core-shell LEDs Tong Wang ( University of Oxford, UK) Non-polar InGaN Quantum Dots: Polarised Single-Photon Sources with Temperature-dependent Fine Structure Splitting, Reduced Lifetime and Spectral Diffusion Ke Xu (Chinese Academy of Sciences, China) Key issues in growth of bulk GaN by HVPE technology and recent progress Takehiro Yoshida (SCIOCS, Japan) A growth technique of heavily Ge-doped GaN ingot for achieving a high yield in a slicing process Hezhi Zhang (EPFL, Switzerland) GaN-based micro superluminescent light emitting diodes

[Short course] Ulrich T. Schwarz (Technische Universität Chemnitz, Germany) Group-III-nitride optical devices Debdeep Jena (Cornell University, USA) Nitride Electron Devices

Social Activities

Welcome Reception Sunday evening, 6:00 p.m., Nov. 11, 2018

A welcome reception will be held on the 3rd floor of the ANA Crowne Plaza Hotel Kanazawa. All participants and accompanying persons are invited to join the reception free of charge.

Excursion Wednesday afternoon, Nov. 14, 2018

The workshop will organize a tour to the Traditional Handicraft Village “Yunokuni -no-mori,” where visitors can learn about the process of making various local traditional articles, including gold leaf, “Maki-e” Japanese lacquer sprinkled with gold or silver powder, “Washi” Japanese paper, “Wajima” lacquerware, and “Kutani” ceramicware. Visitors will have the opportunity to create their own souvenirs. Detailed information of “Yunokuni-no-mori” : https://yunokuni.jp/mori/?lang=en

The tour also includes a visit to Natadera Temple (那谷寺), where guests will enjoy a beautiful scene of autumn-colored leaves. The temple also has magnificent, strangely formed rocks that are said to be the remains of ancient undersea volcanic eruptions. Detailed information of “Natadera Temple”: http://www.natadera.com/EN/

This tour will visit Kenrokuen (兼六園) and Kanazawa Castle in the evening. Participants will be able to enjoy the wonderful autumn leaves lit up, which is a special experience available only in this limited period at Kenrokuen. The tour will end with dinner, which will be served in Japanese traditional style. Detailed information of “Kenrokuen”: http://www.pref.ishikawa.jp/siro-niwa/kenrokuen/e/index.html

The excursion is optional and requires booking when registering through the website. Because there is a capacity for this excursion, please book early if you wish to participate.

Gold Leaf ExperienceGold Leaf

Maki-e Experience

Japanese Paper

Yamanaka Lacquerware

Japanese Paper Experience

Natadera Temple in autumn

Kenrokuen Kanazawa Castle

Banquet Thursday evening, Nov. 15, 2018

A workshop banquet will be held in the Ohtori (鳳) room on the 3rd floor of the ANA Crowne Plaza Hotel Kanazawa. More than 20 Kanazawa Geisha girls, “Kanazawa Geigi (金沢芸妓),” will perform a traditional Japanese dance, and local Japanese sake, wine, and a delicious multi-course meal will be served. The banquet is also optional and must be booked when registering through the website. Because there is a capacity for banquet room, please book early if you wish to participate.

Price: 8,000 JPY / one person (Advance reservations are required.) Dress: Smart casual Dinner: Sitting style

Student Event Thursday evening, Nov. 15, 2018

A student event will be held in the Zuiun (瑞雲) room on the 3rd floor of the ANA Crowne Plaza Hotel Kanazawa simultaneously with the banquet. This event will be organized by students at Japanese universities. Participants will enjoy discussions while eating light meals and drinking alcohol. All student participants can attend this event and enjoy exchanges with international students without any additional charge. Because there is a capacity for this event, please book early if you wish to participate. Further information can be found on the workshop web site: http://www.iwn2018.jp/

Student event at ISGN-6

ANA Crowne Plaza Hotel Kanazawa Kanazawa Geigi

Registration All attendees and presenters of contributed papers are subject to the relevant

registration fees. Please register through the conference website: https://web-register.jp/iwn2018/en/login/

Category

Early Normal

On site Until

Oct. 1, 23:59 (JST)

On/after

Oct. 2, 0:00 (JST) - Nov. 7

General 65,000 JPY 80,000 JPY 95,000 JPY

Student 30,000 JPY 40,000 JPY 50,000 JPY

Exhibition 40,000 JPY 50,000 JPY

Accompany 11,000 JPY 13,000 JPY

Tutorial 2,000 JPY

Banquet 8,000 JPY

Excursion 3,000 JPY

General and student registration fees include: - Attendance of all technical sessions except tutorial session. - Conference packets, including the technical digest. - Attendance of the welcome reception. The exhibition registration fee is for those who plan to exhibit at the workshop. The fee for an accompanying person includes attendance of the welcome reception, banquet, and excursion. The registration fees do not include any lunches. Exhibition and accompanying registrants cannot participate in any technical sessions.

Payment Online payment will be accepted via credit card (VISA, Master, AMEX, and JCB only).

Limited on-site registration will be available; however, we recommend paying online in advance. All payments must be made in Japanese yen.

Cancellation In the case of cancellation, the registrant can cancel processing from the registration

site. The following cancellation fees apply:

- Until Oct. 1, 2018, 23:59 (JST): 5,000 JPY (Registration fee), 2,000 JPY (Banquet),

and 1,000 JPY (Excursion). - On/after Oct. 2, 2018, 0:00 (JST): 100% of the registration fee / No Refund.

VISA All foreign visitors entering Japan must possess a valid passport. Participants from

countries requiring a visa to enter Japan should obtain one from the nearest Japanese embassy or consulate in good time. If documents issued by the workshop committee are necessary for the visa application (e.g., an invitation letter), please send the following invitation letter request form to the committee member (Prof. Toru AKIYAMA). We can issue the invitation letter for IWN2018 to only workshop participants. Please

download the necessary documents for Invitation letter's request from HP of IWN2018 (http://www.iwn2018.jp/Registration.html#2). Before you send the invitation letter request, please complete registration (payment) for IWN2018. Prof. Toru AKIYAMA Member of Steering committee, Department of Physics Engineering, Mie University 1577 Kurima-Machiya, Mie 514-8507, Japan E-mail: [email protected] Accommodation

A limited number of rooms have been secured at local hotels, as shown below. Participants can make reservations for rooms of these hotels from the Registration site (https://web-register.jp/iwn2018/en/login/).

Hotel List

No Hotel name Room Type Price (/night)

1 ANA Crowne Plaza Kanazawa Single/Twin JPY 16,400 ~

2 Hotel Kanazawa Single/Twin JPY 12,300 ~

3 Hotel Route-Inn Kanazawa

Ekimae Single/Twin JPY 9,200 ~

4 Daiwa Roynet Hotel Kanazawa Single/Twin JPY 13,200 ~

5 APA Hotel Kanazawa Ekimae Single/Twin JPY 8,400 ~

6 Kanazawa Manten Hotel Ekimae Single/Twin JPY 9,200 ~

Official Registration Desk ART TOURIST has been appointed to staff the official registration desk during the

workshop and will handle registration and hotel accommodations. ART TOURIST CO., LTD TEL: +81-75-252-2234, FAX: +81-75-252-2244 Email: [email protected]

JJAP Special Issue All authors presenting their research at the workshop are encouraged to submit their manuscripts to the Special Issue of the Japanese Journal of Applied Physics (JJAP) entitled "Frontiers of Nitride Semiconductor Research", which will be published in June 2019 from IOP Publishing. Authors should read the contents of the following URL

carefully before preparation of manuscripts. The deadline for manuscript submission is November 16, 2018. General information https://journals.jsap.jp/jjap/special-issues/information Online submission https://journals.jsap.jp/jjap/special-issues/online-submission-to-jjap-special-issues Manuscripts should essentially follow the JJAP standard; the manuscripts will be reviewed through the normal reviewing process of JJAP, and accordingly authors are recommended to cite approximately 30 or more references to maintain the relevance of the manuscript. The publication charge will be included in the Registration Fee of the author. All the accepted manuscripts will be subjected to English editing by IOP Publishing free of charge before the publication. An open-access option will be provided up to 40 selected papers free of charge; a regular open-access option can be selected by paying the corresponding fee. It should be noted that the publication of no-show papers at the workshop without an unavoidable, demonstrable explanation shall be cancelled automatically to eliminate submissions from authors who do not intend to attend the workshop.

Important Dates August 20, 2018: Submission system for JJAP Open

November 16, 2018: Deadline for JJAP Submission

Late News Papers A limited number of papers describing the most up-to-date results will be accepted as

Late News Papers. Abstracts for these papers should be prepared in accordance with the same guidelines as regular papers. Late news submission system will be opened on HP of IWN2018 from mid-August, 2018. The authors are encouraged to submit a camera-ready abstract (A4-size with 25 mm margins on all sides) and a short summary (150 words) of the abstract. The abstract must be completed within 1 page without any figures and tables. The authors are recommended to add one page for supplementary information, in which figures and tables can be included. Note that only the first page of the abstract will be published in the electronic version of an abstract book (stored in a USB flash drive), whereas the entire two pages are used for a refereeing purpose. The 150-word short summary will be published in a paper-based abstract book. Authors are asked to submit their abstracts via the submission form. The abstract template can be downloaded from HP (http://www.iwn2018.jp/program.html#7, http://www.iwn2018.jp/IWN2018template.doc ).

Important Dates Deadline of submission of late news: September 14, 2018

(It will NOT be extended).

Venue & Access

Venue The Ishikawa Ongakudo ("Ongakudo" in

Japanese means Music Hall), the ANA Crowne Plaza Hotel Kanazawa, and Motenashi Dome (“Motenashi” in Japanese means Welcome) are located in Kanazawa.

Kanazawa, the beautiful capital city of Ishikawa Prefecture, sits on the Sea of Japan and is bordered by the Japanese Alps, Hakusan National Park, and Noto Peninsula National Park. Kanazawa is one of the most popular sight-seeing cities in Japan for many reasons. The present Kanazawa city was initially established in the Edo period. Centered around Kanazawa Castle, there are many places of interest to visit, including Kenrokuen ( 兼六園 ) Garden and the Higashi-Chaya (東茶屋) District, which preserve the atmosphere of the Edo period. Facing the Sea of Japan, Kanazawa is also famous for Japanese cuisine based on seafood. Particularly, snow crab, which is called “Kano-crab” and “Kobako-crab” in this area, can be caught only from November-March and November-December, respectively, when many Japanese people visit Kanazawa to eat Kano-crab and Kobako-crab. Kanazawa is also known for its sake production. Workshop participants are highly encouraged to try the Japanese cuisine during their stay in Kanazawa.

Kano-crab

Kenrokuen Garden

Japanese Sake

Kanazawa Castle

Traditional Cuisine Higashi-Chaya District

Access

There are several ways to reach Kanazawa via international airports. Kanazawa is accessible from Tokyo via the “Hokuriku Shinkansen” super-express (approximately 148 min). The “Thunderbird” express is also available from Osaka to Kanazawa (approximately 160 min). A limousine bus is available from the Komatsu airport (approximately 40 min), which can be reached from other international airports in Japan as well as neighboring countries.

Location of Kanazawa in Japan

The routes to Kanazawa from your country

The Ishikawa Ongakudo, the ANA Crowne Plaza Hotel Kanazawa, and Motenashi Dome are very close to JR Kanazawa station. Participants can find these places just outside the east exit (東口) of the station.

Map near the workshop venue

(Ishikawa Ongakudo, ANA Crowne Plaza Hotel Kanazawa, and Motenashi Dome)

Further Information Please visit http://www.iwn2018.jp for details on registration, abstract submission, and

other information. Please make contact with IWN 2018 secretariat (E-mail: [email protected]).

Ishikawa Ongakudo (Concert Hall)

ANA Crowne Plaza Hotel Kanazawa

Motenashi Dome (outside) and Tsuzumi-mon

Presentation Guidelines

Allotted time for each presentation Plenary talk: 40 minutes Invited talk: 25 minutes (including 5 minute Q&A time) Contributed oral talk: 15 minutes (including 3 minute Q&A time) Poster presentation: 120 minutes

Guideline for Plenary/Invited/Contributed oral presenters A projection laser pointer and a laptop computer with MS PowerPoint 2016 and a latest version of Adobe Acrobat Reader will be provided for oral presentations. We kindly ask the speakers to upload the presentations to the computer during break time before the session. It is recommended for Oral presenters to make slides with the XGA standard (1024 × 768). The speakers may use their own laptops, compatible with VGA video connectors. In that case, we kindly ask to test the computers during break time before the session.

Guideline for Poster Presenters Boards and push pins will be provided for poster presenters. The boards will fit posters up to A0 format (W841 mm x H1189 mm). Please display the paper title, author names, and affiliations at the top of the posters. The presenters should stand in front of their posters to discuss their results with attendees during the allotted session time. Posters may be set up from the morning of the day of the poster session. They should be taken down within 1 hour after the session ends. The posters that are left until the end of the day will be discarded by the program committee.

[Short course] November 11 (Sun), 2018:

Zuiun1-2 (瑞雲 1-2) 13:30-15:00 Ulrich T. Schwarz (Technische Universität Chemnitz, Germany) Group-III-nitride optical devices [Short course1] 15:30-17:00 Debdeep Jena (Cornell University, USA) Nitride Electron Devices [Short course2] General and student registrants can participate in this short course session, but it is optional and must be booked when registering through the website.

DateRoom

DateRoom

Break

Excursion

J2 (GR/ED) CR3 GR2 ED2Exhibi�on

OD8 J5 (GR/OD) CR10 ED6 GR6 ED7

GR8

)uhT( 51 .voN)deW( 41 .voN

8:00

Exhibi�on

Registra�onOpening

GR3 CR5 OD2 ED3 CR6 OD39:00 Plenary 1Break

10:00 Plenary 2

OD511:00

Lunch12:00

Lunch

Registra�on

ShortCourse 1 ED1

OD4

Nov. 11 (Sun) Nov. 12 (Mon) Nov. 13 (Tue)

CR4 J3 (GR/OD)

ED4 J4 (GR/CR)

OD7GR5 CR8 OD6 ED5 CR9

9:00

8:00

10:00Exhibi�on OD9 GR7 CR11 ED8

15:00 Break

Poster MoP Poster MoPExhibi�on

ShortCourse 216:00

CR1 GR1 OD1 CR2 J1 (GR/OD)14:00

13:00 Exhibi�on

Exhibi�on

Welcomerecep�on

Break19:00

Rump Session20:00

Poster TuP17:00

18:00

Poster TuPExhibi�on

Exhibi�on

Registra�on

BreakPlenary 3

Exhibi�on GR4 CR7

11:00

12:00

17:00

18:00

19:00

Lunch Lunch13:00

14:00

GR12 OD13 Exhibi�on OD16 GR15 CR16

ED9

Exhibi�on CR13 GR11 OD12 ED 11

OD15 GR14 CR15

Banquet Student Event20:00

J6 (GR/CR)Plenary 415:00Plenary 5

16:00 Wrap UpClosing

Poster ThPExhibi�on Poster ThP

Exhibi�on CR14 OD14 ED12 GR13

Nov. 16 (Fri)

Exhibi�on

Break

ED15 GR17

ED1431DE11 DO01RG01DE01DO9RG21RC J7 (GR/OD)

Break Break

Rrgistra�on

Exhibi�on

Rrgistra�on

Program at a Glance

Koryu Koryu Koryu

Koryu HogakuConcert Ohtori1 Ohtori2 Zuiun1 Zuiun2Zuiun1&2 Dome

Dome

DomeOhtori3 Hogaku Ohtori1 Ohtori2 Zuiun1 Zuiun2Ohtori3

Hogaku Ohtori1 Ohtori2 Zuiun1 Zuiun2Ohtori3 Hogaku Ohtori1 Ohtori2 Zuiun1 Zuiun2Ohtori3 Concert Ohtori1 Ohtori2 Zuiun1 Zuiun2Ohtori3

Koryu

DRAFT

International Workshop on Nitride Semiconductors 2018 November 12 (Mon)

IWN2018 Program

November 12 (Mon)

Opening Concert （コンサート） 08:30-09:00

Plenary Concert （コンサート） 09:00-11:30

PL-1 (Plenary) 09:00 - 09:40Blue LEDs and Transformative Electronics for Developing Sustainable Smart Soci-etyHiroshi AmanoNagoya University, Japan

break 09:40 - 10:10

PL-2 (Plenary) 10:10 - 10:50Gallium Nitride and the New Computer RevolutionTomás PalaciosMassachusetts Institute of Technology, USA

PL-3 (Plenary) 10:50 - 11:30Challenge for GaN-based Electronics on Future MobilityKoji ShiozakiNagoya University, on leave from Toyota Motor, Japan

lunch 11:30 - 13:30

DRAFT


ED1 Power Devices I Hogaku （邦楽） 13:30-15:20

ED1-1 (Invited) 13:30 - 13:55Overcoming Barriers to the Adoption of Wide-Bandgap Semiconductors for PowerElectronics and Vertical Power Electronic Devices Based on Bulk GaN SubstratesIsik C. Kizilyalli,1 Eric P. Carlson,2 and Daniel W. Cunningham1

1Advanced Reseacrh Project Agency - Energy, U.S. Department of Energy, United States of America, 2Booz Allen Hamilton,United States of America

ED1-2 (Invited) 13:55 - 14:20HVPE, a dark horse for GaN on GaN epitaxyHajime Fujikura, Taichiro Konno, Takehiro Yoshida, and Fumimasa HorikiriSCIOCS Co. Ltd, Japan

ED1-3 (Oral) 14:20 - 14:35Molecular Beam Epitaxy grown p-i-n diodes with a 6um drift layer on bulk Ga-/N-polar GaN substratesKazuki Nomoto,1 Yongjin Cho,1 Zongyang Hu,1 Debdeep Jena,1,2,3 and Huili Grace Xing1,2,3

1School of Electrical and Computer Engineering, Cornell University, United States of America, 2Department of MaterialsScience and Engineering, Cornell University, United States of America, 3Kavli Institute at Cornell for Nanoscale Science,Cornell University, United States of America

ED1-4 (Oral) 14:35 - 14:50Vertical GaN pn diode with avalanche capability structureHayata Fukushima,1 Shigeyoshi Usami,1 Yuto Ando,1 Atsushi Tanaka,2,5 Manato Deki,2 Maki Kushimoto,1 ShugoNitta,2 Yoshio Honda,2 and Hiroshi Amano2,3,4,5

1Graduate School of Engineering, Nagoya University, Japan, 2IMaSS, Japan, 3ARC, Japan, 4VBL, Japan, 5NIMS, Japan

ED1-5 (Oral) 14:50 - 15:05Effect of strained layer superlattice (SLS) on breakdown voltage of fully-verticalGaN p-n diodes on SiDebaleen Biswas, Torii Naoki, Keiji Yamamoto, and Takashi EgawaResearch Center for Nano-Device and Advanced Material, Nagoya Institute of Technology, Japan

ED1-6 (Oral) 15:05 - 15:20Performance Limits of Vertical 2H-GaN of Conventional and Natural PolarizationSuperjunction DevicesXiang Zhou, Jennifer Rachael Howell-Clark, Zhibo Guo, and Tat-Sing Paul ChowRensselaer Polytechnic Institute (RPI), United States of America

DRAFT


CR1 Fluctuation & Localization Ohtori 1 （鳳 1） 13:30-15:25

CR1-1 (Invited) 13:30 - 13:55Role of growth mode induced fluctuations on the optical absorption edge broadeningin thick InGaN epilayersRaphaël Butté,1 Lise Lahourcade,1 Tomas Kristijonas Uzdavinys,2 Gordon Callsen,1 Mounir Mensi,2 MarleneGlauser,1 Georg Rossbach,1 Denis Martin,1 Jean-François Carlin,1 Saulius Marcinkevicius,2 and Nicolas Grandjean1

1Institute of Physics, Ecole Polytechnique Federale de Lausanne, Switzerland, 2Department of Applied Physics, KTH RoyalInstitute Technology, Sweden

CR1-2 (Oral) 13:55 - 14:10Probing the onset of alloy formation in bulk InGaN epilayers by different excitonicspeciesGordon Callsen, Jean-François Carlin, Raphaël Butté, and Nicolas GrandjeanInstitute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland

CR1-3 (Oral) 14:10 - 14:25Mobility edge and carrier localization in InGaN/GaN quantum wells: A combinedexperimental and theoretical studyStefan Schulz,1 William E. Blenkhorn,2 Daniel S. P. Tanner,1 Rachel A. Oliver,3 Menno J. Kappers,3 Colin J.Humphreys,3,4 and Phil Dawson2

1Tyndall National Institute, Ireland, 2School of Physics and Astronomy, Photon Science Institute, University of Manchester,United Kingdom, 3Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, United Kingdom,4School of Engineering & Materials Science, Queen Mary University of London, United Kingdom

CR1-4 (Oral) 14:25 - 14:40Recombination properties of (In,Ga)N quantum wells - role of hole localizationTobias Schulz,1 Mariia Anikeeva,1 Jens Tomm,2 Felix Mahler,2 Liverios Lymperakis,3 Carolin Cheze,4 RaffaellaCalarco,4 and Martin Albrecht1

1Leibniz Institute for Crystal Growth, Germany, 2Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy,Germany, 3Max-Planck- Institute for Iron Research, Germany, 4Paul-Drude-Institute of Solid-State Electronics, Germany

CR1-5 (Oral) 14:40 - 14:55Properties and consequences of carrier localization induced by intrinsic composi-tional disorder in InGaN/GaN quantum wellsWiebke Hahn,1 Jean-Marie Lentali,1 Shuji Nakamura,2 James S. Speck,2 Claude Weisbuch,1,2 Yuh-Renn Wu,3 MarcelFiloche,1 Fouad Maroun,1 Lucio Martinelli,1 Yves Lassailly,1 and Jacques Peretti11Laboratoire de Physique de la Matière Condensée, Ecole polytechnique, France, 2Materials Department, University ofCalifornia, Santa Barbara, United States of America, 3Graduate Institute of Photonics and Optoelectronics, National TaiwanUniversity, Taiwan

CR1-6 (Oral) 14:55 - 15:10Carrier localization in monolayer-thick (In,Ga)N quantum wells directly visualizedby cathodoluminescence microscopyFrank Bertram,1 Gordon Schmidt,1 Peter Veit,1 Silke Petzold,1 Jürgen Christen,1 Mariia Anikeeva,2 Tobias Schulz,2

Martin Albrecht,2 Pawel Wolny,3 Marta Sawicka,3 and Marcin Siekacz3

1 Institute of Physics, Otto-von-Guericke-University Magdeburg, Germany, 2Institute for Crystal Growth, Berlin, Germany,3 Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland

DRAFT


CR1-7 (Oral) 15:10 - 15:253D Modeling of Green InGaN QW LEDs with Quantitative Analysis of Alloy Fluc-tuation and Thickness FluctuationRen-Shiun Liou,1 Hung-Hsiang Chen,1 Marcel Filoche,2 Claude Weisbuch,2,3 James S. Speck,3 and Yuh-Renn Wu1,4

1Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan, 2Laboratoire de Physique de laMatière Condensée, CNRS-Ecole Polytechnique, France, 3Materials Department, University of California, Santa Barbara,United States of America, 4Industrial Technology Research Institute, Hsinchu, Taiwan, Taiwan

GR1 Doping Ohtori 2 （鳳 2） 13:30-15:25

GR1-1 (Invited) 13:30 - 13:55High conductivity in Si implanted AlNRamon Collazo,1 M. Hayden Breckenridge,1 Andrew Klump,1 Qiang Guo,1 Shun Washiyama,1 Biplab Sarkar,1

Pramod Reddy,2 Ronny Kirste,2 Seiji Mita,2 James Tweedie,2 and Zlatko Sitar1

1Department of Material Science and Engineering, North Carolina State University, United States of America, 2AdroitMaterials, Inc., United States of America

GR1-2 (Oral) 13:55 - 14:10Point defect reduction in Si doped Al rich AlGaN grown on single crystal AlN andsapphire by metalorganic chemical vapor depositionSeiji Mita,1 Pramod Reddy,1 Shun Washiyama,2 Mathew H. Breckenridge,2 Biplab Sarkar,2 Felix Kaess,2 JonathonN. Baker,2 Ronny Kirste,1 Douglas L. Irving,2 Ramon Collazo,2 and Zlatko Sitar1,2

1Adroit Materials, United States of America, 2Department of Materials Science and Engineering, North Carolina StateUniversity, United States of America

GR1-3 (Oral) 14:10 - 14:25Self-compensation in heavily Ge doped AlGaN: a comparison to Si dopingShun Washiyama,1 Pegah Bagheri Bagheri,1 Ronny Kirste,2 Pramod Reddy,2 M. Hayden Brechenridge,1 Yan Guan,1

Ji Hyun Kim,1 Qian Guo,1 Seiji Mita,2 Ramon Collazo,1 and Zlatko Sitar1,2

1NCSU, United States of America, 2Adroit Materials, United States of America

GR1-4 (Oral) 14:25 - 14:40High electron mobility n-type GaN grown by pulsed sputtering and its applicationto electron devicesKohei Ueno,1 Hideyuki Imabeppu,1 Atsushi Kobayashi,1 and HIroshi Fujioka1,2

1Institute of Industrial Science, The University of Tokyo, Japan, 2ACCEL, Japan Science and Technology Agency, Japan

GR1-5 (Oral) 14:40 - 14:55Non-equilibrium analysis of CH4 adsorption on GaN(0001) and (000−1): the growthorientation dependence of the C impurity concentrationAkira Kusaba,1 Guanchen Li,2 Pawel Kempisty,3 Michael R. von Spakovsky,4 and Yoshihiro Kangawa1,5

1Kyushu University, Japan, 2University of Oxford, United Kingdom, 3Polish Academy of Sciences, Poland, 4Virginia Tech,United States of America, 5Nagoya University, Japan

DRAFT


GR1-6 (Oral) 14:55 - 15:10Extrinsic Carbon Doping of GaN by using Ethene as PrecursorDirk Fahle,1 Hannes Behmenburg,1 Hady Yacoub,2 Holger Kalisch,2 and Michael Heuken1,2

1AIXTRON SE, Germany, 2Compound Semiconductor Technology, RWTH Aachen, Germany

GR1-7 (Oral) 15:10 - 15:25Growth and characterization of C-doped GaNRichter Eberhard,1 Franziska Beyer,2 Ivan Gamov,3 Günter Gärtner,4 Klaus Irmscher,3 Johannes Heitmann,2 EwelinaNowak,3,5 Hendrik Sträter,2 Markus Weyers,1 Friederike Zimmermann,2 and Günther Tränkle1

1Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Germany, 2Institute of Applied Physics, TUBergakademie Freiberg, Germany, 3Leibniz-Institut fuer Kristallzuechtung, Germany, 4Institute of Experimental Physics,TU Bergakademie Freiberg, Germany, 5Faculty of Technical Physics, Politechnika Poznanska, Poland

OD1 Tunnel Junction Ohtori 3 （鳳 3） 13:30-15:25

OD1-1 (Invited) 13:30 - 13:55Tunnel Injected UV Light Emitting DiodesSiddharth RajanOhio State University, USA

OD1-2 (Oral) 13:55 - 14:10Tunnel junction nitride laser diodes grown by plasma assisted molecular beamepitaxyCzeslaw Skierbiszewski, Grzegorz Muziol, Henryk Turski, Marcin Siekacz, Krzesimir Nowakowski-Szkudlarek,Mateusz Hajdel, Mikolaj Zak, Anna Feduniewicz-Zmuda, Pawel Wolny, and Marta SawickaInstitute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland

OD1-3 (Oral) 14:10 - 14:25Comparison of Standard P-up and Buried Tunnel Junction Blue Light EmittingDiodes towards Integrated Single Photon SourcesKevin Lee,1 Shyam Bharadwaj,1 Yongjin Cho,1 Henryk Turski,2 Ryan Page,3 Nikhil Mathur,4 CzeslawSkierbiszewski,2 Greg Fuchs,4,5 Huili (Grace) Xing,1,3,5 and Debdeep Jena1,3,5

1School of Electrical and Computer Engineering, Cornell University, United States of America, 2Institute of High PressurePhysics, Polish Academy of Sciences, Poland, 3Department of Material Science and Engineering, Cornell University, UnitedStates of America, 4School of Applied Engineering and Physics, Cornell University, United States of America, 5Kavli Institute,Cornell University, United States of America

OD1-4 (Oral) 14:25 - 14:40Tunneling contacts for LEDs with heavily Si doped GaN prepared by pulsed sput-teringTaiga Fudetani,1 Kohei Ueno,1 Atsushi Kobayashi,1 and Hiroshi Fujioka1,2

1Institute of Industrial Science, The University of Tokyo, Japan, 2JST-ACCEL, Japan

DRAFT


OD1-5 (Oral) 14:40 - 14:55GaN-based LEDs with GaN:Mg/GaN:Ge tunnel junction grown by metalorganicvapor phase epitaxyChristoph Berger, Silvio Neugebauer, Cleophace Seneza, Jürgen Bläsing, Armin Dadgar, Jürgen Christen, and AndréStrittmatterOtto-von-Guericke-University Magdeburg, Germany

OD1-6 (Oral) 14:55 - 15:10Realization of MOCVD GaN Tunnel Junction Contacts in Large Area LEDsAbdullah I. Alhassan,1,3 Cheyenne Lynsky,3 Ahmed Alyamani,1 Abdulrahman Albadri,1 Shuji Nakamura,2,3 andSteven P. DenBaars2,3

1National Center for Nanotechnology, King Abdulaziz City for Science and Technology, Saudi Arabia, 2Department of Electricaland Computer Engineering, University of California Santa Barbara, United States of America, 3Materials Department,University of California Santa Barbara, United States of America

OD1-7 (Oral) 15:10 - 15:25Fabrication and characterization of µµµLEDs defined by tunnel junctionKrzysztof Gibasiewicz,1 Grzegorz Muziol,1 Marcin Siekacz,1 Jacek Kacperski,2 Szymon Grzanka,1,2 Lucja Marona,1,2

Czeslaw Skierbiszewski,1 Piotr Perlin,1,2 and Tadeusz Suski11Institute of High Pressure Physics, “Unipress”, Poland, 2TopGaN Limited, Poland

CR2 Structural Analysis Zuiun 1 （瑞雲 1） 13:30-15:20

CR2-1 (Invited) 13:30 - 13:55High resolution characterization of nm-size nitride objects using Atom Probe To-mography (APT)Catherine BOUGEROL,1 Lynda Amichi,2 Balakumar Baskaran,2 Eva Monroy,2 Pierre-Henri Jouneau,2 and AdelineGrenier3

1Univ Grenoble Alpes, CNRS, Inst Neel, France, 2Univ Grenoble Alpes, CEA, INAC, France, 3Univ. Grenoble Alpes, CEA,LETI, France

CR2-2 (Invited) 13:55 - 14:20Nanometer scale correlative structural investigation of alloy distributions in qua-ternary nitride (In,Al,Ga)N.Bastien Bonef,1 Abdullah Alhassan,1 Cheyenne Lynsky,1 Guillaume Lheureux,1 Matthew Laurent,1 Eric Robin,2 andJames Speck1

1Materials department, University of California Santa Barbara, United States of America, 2Université Grenoble Alpes, CEA,INAC, France

CR2-3 (Oral) 14:20 - 14:35Atom Probe and Cathodoluminescence study of Mg implanted layers in GaNJun Chen,1 Wei Yi,1 Yujin Cho,1 Takashi Kimura,1 Takashi Sekiguchi,1,2 Jun Uzuhashi,1 Kazuhiro Hono,1 TadakatsuOhkubo,1 Shinya Takashima,3 and Masaharu Edo3

1NIMS, Japan, 2University of Tsukuba, Japan, 3Fuji Electric, Japan

DRAFT


CR2-4 (Oral) 14:35 - 14:50Epitaxial graphene as Van der Waals substrate for GaN growth: structural andelectrical characterizationOleksii Klymov,1 Núria Garro,1 Ana Cros,1 Marion Gruart,2 Nathaniel Feldberg,3 Hanako Okuno,2,4 and BrunoDaudin2

1Institute of Materials Science. University of Valencia, Spain, 2Université Grenoble Alpes, CEA, INAC, Grenoble, France,3CEA, LETI, MINATEC campus, Grenoble, France, 4CEA, INAC-PHELIQS, LEMMA, Grenoble, France

CR2-5 (Oral) 14:50 - 15:05Nanoscale characterization of high reflectivity AlN/AlGaN deep UV Bragg reflectorsGordon Schmidt, Peter Veit, Hannes Schürmann, Silke Petzold, Frank Bertram, Christoph Berger, Jürgen Bläsing,Armin Dadgar, André Strittmatter, and Jürgen ChristenInstitute of Physics, Otto-von-Guericke-University Magdeburg, Germany

CR2-6 (Oral) 15:05 - 15:20Anisotropic strain in AlN film on sapphire substrateKanako Shojiki,1 Kenjiro Uesugi,2 Kaito Fujikawa,1 Yusuke Hayashi,3 Shiyu Xiao,3 and Hideto Miyake1,3

1Graduate School of Engineering, Mie University, Japan, 2OPRI, Mie University, Japan, 3Graduate School of RIS, MieUniversity, Japan

J1 (GR/OD) Nanostructures I Zuiun 2 （瑞雲 2） 13:30-15:25

J1-1 (Oral) 13:30 - 13:45Self-induced and selective area growth of (In,Ga)N nanowiresMohammed Zeghouane,1 Geoffrey Avit,1 Yamina Andre,1,5 Cathérine Bougerol,2,3 Evelyne Gil,1,5 Pierre Ferret,4

Dominique Castelluci,1 Eric Tournie,6 Thierry Taliercio,6 Ariane Meguekam,6 Yoan Robin,7 Vladimir Dubrovskii,5

Hiroshi Amano,7 and Agnès Trassoudaine1

1Université Clermont Auvergne, CNRS, SIGMA Clermont, Institut Pascal, Clermont-Ferrand, France, 2Univ. GrenobleAlpes, Grenoble, France, 3CNRS, Institut Néel, Grenoble, France, 4Univ. Grenoble Alpes, CEA, LETI, Département Optiqueet Photonique, Grenoble, France, 5ITMO University, Kronverkskiy prospekt 49, 197101, St Petersburg, Russia, 6IES, Univ.Montpellier, CNRS, Montpellier, France, 7IMaSS, Nagoya University, Nagoya, Japan

J1-2 (Oral) 13:45 - 14:00Top-down nanoporous InGaN/GaN made by selective area sublimation for efficientlight emission on Si substrateBenjamin Damilano,1 Stéphane Vézian,1 Jean Massies,1 Thi-Huong Ngo,2,3 Pierre Valvin,2 Tatiana Shubina,4 andBernard Gil21Université Côte d’Azur, CNRS, CRHEA, Valbonne, France , France, 2Laboratoire Charles Coulomb, CNRS and Universitéde Montpellier, France, France, 3Faculty of Science and Engineering, Meijo University, Nagoya , Japan, Japan, 4Ioffe Institute,194021 St Petersburg, Russia , Russia

J1-3 (Oral) 14:00 - 14:15Whispering-gallery mode lasing from a monolithic InGaN/GaN nanoporous mi-cropillarTim Puchtler,1 Tong Wang,1 Huixin Liu,2 John Jarman,3 Rachel A. Oliver,3 Robert A. Taylor,1 and Tongtong Zhu3

1Dept. Department of Physics, University of Oxford, United Kingdom, 2Dept. of Materials Science and Engineering,University of Shanghai For Science and Technology, China, 3Dept. of Materials Science and Metallurgy, University ofCambridge, United Kingdom

DRAFT


J1-4 (Invited) 14:15 - 14:40Monolithic InGaN-based Core-Shell Nanorod Laser ArrayChia-Yen Huang,1 Tzu-Ying Tai,1 Jing-Jie Lin,1 Tsu-Chi Chang,1 Kuo-Bin Hong,1 Tien-Chang Lu,1 Yuh-Renn Wu,2

and Hao-Chung Kuo1

1Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Taiwan, 2GraduateInstitute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taiwan

J1-5 (Oral) 14:40 - 14:55Displacement Talbot Lithography for nano-engineering of III-nitride materialsPierre-Marie Coulon,1 Benjamin Damilano,2 Blandine Alloing,2 Sebatsian Walde,3 Johannes Enslin,4 Gunnar Kusch,5

Pierre Chausse,1 Stéphane Vézian,2 Sylvia Hagedorn,3 Tim Wernicke,4 Jean Massies,2 Jesus Zuniga-Pérez,2 MarkusWeyers,3 Michael Kneissl,3,4 Carol Trager-Cowan,5 Robert W. Martin,5 and Philip A. Shields1

1Department of Electrical & Electronic Engineering, University of Bath, United Kingdom, 2Université Côte d’Azur, CNRS,CRHEA, France, 3Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany, 4Technische UniversitätBerlin, Institute of Solid State Physics, Germany, 5Department of Physics, SUPA, University of Strathclyde, United Kingdom

J1-6 (Oral) 14:55 - 15:10Room Temperature Polariton Lasing and Optical Manipulation in GaN microwiresJunchao Li, Guo Yu, Menglai Lei, Hua Zong, and Xiaodong HuSchool of Physics, Peking University, China

J1-7 (Oral) 15:10 - 15:25Thermal studies and color optimization of white flexible nanowire LEDsNuño Amador,1 Nan Guan,1 Xing Dai,1 Hezhi Zhang,1 Akanksha Kapoor,2,3 Catherine Bougerol,2,4 LorenzoMancini,1 Martin Foldyna,5 Lukas Halagacka,5 Subrata Das,6 Sudipta Som,7 François H. Julien,1 Joel Eymery,2,3

Christophe Durand,2,3 and Maria Tchernycheva1

1C2N-CNRS, University Paris-Sud, Univ. Paris Saclay, France, 2Universite Grenoble Alpes, France, 3CEA-CNRS“Nanophysique et Semiconducteurs” group, CEA-INAC-PHELIQS, France, 4CEA-CNRS “Nanophysique et Semiconduc-teurs” group, CNRS, Institut Neel, France, 5LIPCM-CNRS, Ecole Polytechnique, France, 6CSIR-National Institute forInterdisciplinary Science and Technology, India, 7National Taiwan University, Taiwan

MoP Poster Session 1 Koryu （交流）/ Dome （ドーム） 15:25-17:25

J2 (GR/ED) Growth for ED Hogaku （邦楽） 17:25-19:00

J2-1 (Invited) 17:25 - 17:50Growth of power devices based on III-nitride semiconductorsAndrew A. Allerman,1 Andrew M. Armstrong,1 Mary H. Crawford,1 Greg W. Pickrell,1 Robert A. Kaplar,1 Alec A.Talin,2 Francois Leonard,2 Kimberlee C. Celio,2 Andrew Aragon,3 Isaac Stricklin,3 Morteza Monavarian,3 DanielFeezell,3 Vincent Abate,1 and Caleb Glaser1

1Sandia National Laboratories, Albuquerque, NM 87123, United States of America, 2Sandia National Laboratories, Livermore,CA 94550 , United States of America, 3University of New Mexico, Albuquerque, NM 87106, United States of America

DRAFT


J2-2 (Oral) 17:50 - 18:05A revolutionary GaN-on-SiC epitaxy for power electronicsJr-Tai Chen,1 Johan Bergsten,2 Jun Lu,3 Erik Janzén,3 Mattias Thorsell,2 Lars Hultman,3 Niklas Rorsman,2 and OlofKordina1

1SweGaN AB, Sweden, 2Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden,3Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, Sweden

J2-3 (Oral) 18:05 - 18:20Understanding Homoepitaxial GaN Growth for Vertical DevicesJennifer K. Hite, Michael A. Mastro, Travis J. Anderson, Lunet E. Luna, James C. Gallagher, Jaime A. Freitas, JohnLyons, and Charles R. EddyUS Naval Research Laboratory, United States of America

J2-4 (Invited) 18:20 - 18:45GaN fins by MOVPE: towards vertical FETs and core-shell LEDsAndreas WaagTechnical University of Braunschweig, Germany

J2-5 (Oral) 18:45 - 19:00Electrical properties of selectively grown GaN channel for FinFETsTakuya Hamada,1 Hayato Mukai,1 Tokio Takahashi,2 Toshihide Ide,2 Mitsuaki Shimizu,2 Hiroki Kuroiwa,1 TakuyaHoshii,1 Kuniyuki Kakushima,1 Hitoshi Wakabayashi,1 Hiroshi Iwai,1 and Kazuo Tsutsui11Tokyo Institute of Technology, Japan, 2National Institute of Advanced Industrial Science and Technology, Japan

CR3 InGaN-based QWs I Ohtori 1 （鳳 1） 17:25-18:50

CR3-1 (Invited) 17:25 - 17:50Free excitons in III-nitride quantum wells at room temperature: Dynamics of for-mation and recombinationAndreas HangleiterInstitute of Applied Physics and Laboratory for Emerging Nanometrology, Technische Universität Braunschweig, Germany

CR3-2 (Oral) 17:50 - 18:05Switching of exciton character in double InGaN/GaN quantum wellsTadeusz Suski,1 Grzegorz Staszczak,1 Krzysztof P. Korona,2 Pierre Lefebvre,3 Eva Monroy,4 Piotr A. Drozdz,1,2

Grzegorz Muziol,1 Czeslaw Skierbiszewski,1,5 Krzysztof Gibasiewicz,1 and Piort Perlin1,5

1Institute of High Pressures Physics, UNIPRESS, Poland, 2Institute of Experimental Physics, Warsaw University, Poland,3L2C, University of Montpellier, CNRS, France, 4Univ. Grenoble-Alpes, CEA-INAC-PHELIQS, France, 5TopGaN, Poland

CR3-3 (Oral) 18:05 - 18:20Reduced radiative emission for wide non-polar III-nitride quantum wellsPhilipp Henning, Fedor Alexej Ketzer, Philipp Horenburg, Heiko Bremers, Uwe Rossow, and Andreas HangleiterInstitute of Applied Physics and Laboratory for Emerging Nanometrology, Technische Universitaet Braunschweig, Germany

DRAFT


CR3-4 (Oral) 18:20 - 18:35Micro-Photoluminescence Mapping of Surface Plasmon Coupled Emission fromInGaN/GaN Quantum WellsKoichi Okamoto,1 Kazutaka Tateishi,2 Kaoru Tamada,2 Mitsuru Funato,3 and Yoichi Kawakami31Department of Physics and Electronics, Osaka Prefecture University, Japan, 2Institute for Materials Chemistry and Engi-neering, Kyushu University, Japan, 3Department of Electronic Science and Engineering, Kyoto University, Japan

CR3-5 (Oral) 18:35 - 18:50Analysis of efficiency curves of near-UV, blue, and green emitting InGaN multiplequantum wells using rate equations of exciton recombinationHideaki Murotani,1 Kazunori Shibuya,2 Ayumu Yoneda,2 Yuki Hashiguchi,2 Hiroyuki Miyoshi,2 Satoshi Kurai,2

Narihito Okada,2 Kazuyuki Tadatomo,2 Yoshiki Yano,3 Toshiya Tabuchi,3 Koh Matsumoto,3 and Yoichi Yamada2

1National Institute of Technology, Tokuyama College, Japan, 2Yamaguchi University, Japan, 3Taiyo Nippon Sanso Corporation,Japan

GR2 AlGaN I Ohtori 2 （鳳 2） 17:25-18:55

GR2-1 (Oral) 17:25 - 17:40Compensation of p-AlGaN films grown with MOCVDAndrew Klump,1 Biplab Sarkar,1,2 Shun Washiyama,1 M. Hayden Breckenridge,1 Ji Hyun Kim,1 Felix Kaess,1

Pramod Reddy,3 Seiji Mita,3 Ramon Collazo,1 and Zlatko Sitar1

1North Carolina State University, United States of America, 2Indian Institute of Technology (Indian School of Mines),Dhanbad, India, 3Adroit Materials, United States of America

GR2-2 (Oral) 17:40 - 17:55Effects of underlying layers on electrical properties of p-(Al)GaN/p-AlGaN super-latticesKosuke Sato,1,2 Motoaki Iwaya,2 Tetsuya Takeuchi,2 Satoshi Kamiyama,2 and Isamu Akasaki2,3

1Asahi-Kasei Corporation, Japan, 2Faculity of Science and Technology, Meijo University, Japan, 3Akasaki Research Center,Nagoya University, Japan

GR2-3 (Oral) 17:55 - 18:10AlGaN structures for UV-LEDs based on dislocation-free GaN prismsMaryam Khalilian,1 Filip Lenrick,2 Reine Wallenberg,2 Anders Gustafsson,1 Jonas Johansson,1 B. Jonas Ohlsson,1

and Lars Samuelson1

1Solid State Physics,NanoLund, Lund University, Sweden, 2Centre for Analysis and Synthesis,NanoLund, Lund University,Sweden

GR2-4 (Oral) 18:10 - 18:25Epitaxial Growth of Boron Containing AlGaN Layers - First Investigations withTri-isopropyl-boronOliver Rettig,1 Jan-Patrick Scholz,1 Natja Steiger,2 Sebastian Bauer,2 Yueliang Li,3 Haoyuan Qi,3 Johannes Biskupek,3

Ute Kaiser,3 Klaus Thonke,2 and Ferdinand Scholz1

1Institute of Functional Nanosystems, Ulm University, Germany, 2Institute of Quantum Matter / Semiconductor PhysicsGroup, Ulm University, Germany, 3Central Facility of Electron Microscopy, Ulm University, Germany

DRAFT


GR2-5 (Oral) 18:25 - 18:40Realization of high hole concentration p-type AlGaN by controllable metal-atomdesorption techniqueMingxing Wang, Fujun Xu, Nan Xie, Yuanhao Sun, Baiyin Liu, Zhixin Qin, and Bo ShenState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics,Peking University, China

GR2-6 (Oral) 18:40 - 18:55Substrate off-angle and direction dependences on DUV-LED characteristicsHIsanori Kojima,1 Takuma Ogasawara,1 Myunghee Kim,1 Yoshiki Saito,1,3 Kazuyoshi Iida,1 Norikatsu Koide,1

Tetsuya Takeuchi,1 Motoaki Iwaya,1 Satoshi Kamiyama,1 and Isamu Akasaki1,2

1Faculty of Science and Technology, Meijo University, Japan, 2Akasaki Research Center, Nagoya University, Japan, 3TOYODAGOSEI Co., Ltd., Ama, Japan

ED2 Mg Implantation Ohtori 3 （鳳 3） 17:25-18:55

ED2-1 (Oral) 17:25 - 17:40Dopant activation of ion-implanted Mg in GaN by flash lamp annealingMasato Omori,1 Takahiro Yamada,2 Hideaki Tanimura,2 Shinichi Kato,2 and Kouji Shiozaki11Nagoya University, Japan, 2SCREEN Semiconductor Solutions Co., Ltd., Japan

ED2-2 (Oral) 17:40 - 17:55Capless Annealing of Mg Implanted GaN (0001) Face Using Atmospheric PressureThermal Plasma JetHiroaki Hanafusa,1 Seiichiro Higashi,1 and Koji Shiozaki21Graduate school of Advanced Sciences of Matter, Hiroshima University, Japan, 2Institute of Materials and System forSustainability, Nagoya University, Japan

ED2-3 (Oral) 17:55 - 18:10Polarity Dependent Implanted p-type Dopant Activation in GaNAlan G. Jacobs,1 Boris N. Feigelson,2 Jennifer K. Hite,2 Cameron A. Gorsak,3 Lunet E. Luna,4 Travis J. Anderson,2

and Fritz J. Kub2

1ASEE Postdoctoral Fellow residing at U.S. Naval Research Lab, United States of America, 2U.S. Naval Research Lab, UnitedStates of America, 3Dept. Of Physics, University of Notre Dame, United States of America, 4NRC Postdoctoral Associateresiding at U.S. Naval Research Lab, United States of America

ED2-4 (Oral) 18:10 - 18:25Evidence of P-type GaN Formed by Magnesium Ion ImplantationYating Shi, Weizong Xu, Xuanhu Chen, Fangfang Ren, Dong Zhou, Jiandong Ye, Dunjun Chen, Rong Zhang,Youdou Zheng, and Hai LuSchool of Electronic Science and Engineering, Nanjing University, China

DRAFT


ED2-5 (Oral) 18:25 - 18:40The effect of off-cut on thermal stability of m-plane GaN substratesKento Yoshida,1 Sakiko Yamanobe,1 Keita Konishi,1 Shinya Takashima,2 Masaharu Edo,2 Bo Monemar,3,4 andYoshinao Kumagai1,3

1Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Japan, 2Fuji Electric Co. Ltd., Japan,3Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, Japan, 4Department of Physics,Chemistry and Biology (IFM), Linköping University, Sweden

ED2-6 (Oral) 18:40 - 18:55Intense donor-acceptor-pair emission with suppressed green luminescence fromMg/N-co-implanted GaN with ultra-high-pressure thermal annealingHideki Sakurai,1,2,3 Shinji Yamada,1,2,3 Masato Omori,1 Yukihiro Furukawa,3 Hideo Suzuki,3 Michal Bockowski ,1,4

Jun Suda,1,2 and Tetsu Kachi11IMaSS, Nagoya University, Japan, 2Department of Electronics, Nagoya University, Japan, 3Institute of Semiconductor andElectronics Technologies, ULVAC, Japan, 4Institute of High Pressure Physics Polish Academy of Sciences (IHPP PAS), Poland

CR4 Red & Infrared Materials Zuiun 1 （瑞雲 1） 17:25-18:55

CR4-1 (Oral) 17:25 - 17:40Fabrication of Two-Dimensional GaN:Eu Plasmonic Crystals toward Highly Effi-cient Red EmittersYoji Matsude, Tomoya Yamada, Shuhei Ichikawa, Jun Tatebayashi, and Yasufumi FujiwaraOsaka university, Japan

CR4-2 (Oral) 17:40 - 17:55Confocal microspectroscopy of defects in Eu-implanted GaN:MgMichael Wallace,1 Peter Fletcher,2 Paul R. Edwards,1 Katharina Lorenz,3 Menno J. Kappers,4 Mical Bockowski,5 TaoWang,2 and Kevin P. O’Donnell11Department of Physics University of Strathclyde , United Kingdom, 2Department of Electronic and Electrical EngineeringUniversity of Sheffield, United Kingdom, 3IPFN, Instituto Superior Tecnico, Universidade Lisboa, Portugal, 4Departmentof Materials Science and Metallurgy University of Cambridge, United Kingdom, 5Institute of High Pressure Physics PAS,Poland

CR4-3 (Oral) 17:55 - 18:10Systematic investigation of surface and bulk electronic structures ofunintentionally-doped InxGa1-xN (0≤x≤1) epilayers by hard X-ray photoelectronspectroscopyMasataka Imura,1 Shunsuke Tsuda,1 Takahiro Nagata,1 Ryan G. Banal,1 Hideki Yoshikawa,1 AnLi Yang,1 YoshiyukiYamashita,1 Keisuke Kobayashi,1 Yasuo Koide,1 Tomohiro Yamaguchi,2 Masamitsu Kaneko,3 Tsutomu Araki,3 andYasushi Nanishi31NIMS, Japan, 2Kogakuin Univ., Japan, 3Ritsumeikan Univ., Japan

DRAFT


CR4-4 (Oral) 18:10 - 18:25Luminescence enhancement in InN deposited by Van der Waals epitaxy on grapheneinterlayerDarius Dobrovolskas,1 Shingo Arakawa,2 Shinichiro Mouri,2 Tsutomu Araki,2 Yasushi Nanishi,2 Juras Mickevicius,1

and Gintautas Tamulaitis1

1Institute of Photonics and Nanotechnology, Vilnius University, Lithuania, 2Department of Electrical and Electronic Engi-neering, Ritsumeikan University, Japan

CR4-5 (Oral) 18:25 - 18:40Transformation of photoluminescence spatial distribution with thickness in pulsed-MOCVD-grown InN epilayersJuras Mickevicius, Darius Dobrovolskas, Tadas Malinauskas, Marek Kolenda, Arunas Kadys, and Gintautas Tamu-laitisInstitute of Photonics and Nanotechnology, Vilnius University, Lithuania

CR4-6 (Oral) 18:40 - 18:55Cathodoluminescence characteristics of high indium contenting InGaN filmBowen Sheng,1,2 Xiantong Zheng,1 Ping Wang,1 Frank Betram,2 Zhaoying Chen,1 Jürgen Christen,2 Bo Shen,1 andXinqiang Wang1

1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China,2Institute of Physics, Otto-von-Guericke-University Magdeburg, Germany

J3 (GR/OD) Nanostructures II Zuiun 2 （瑞雲 2） 17:25-18:55

J3-1 (Oral) 17:25 - 17:40AlGaN Nano-shell Formation on a GaN Nanorod Based on Pulsed MOCVD GrowthCharng-Gan Tu,1 Xu Zhang,2 Keng-Ping Chou,1 Yi-Chiao Hsu,1 Yen-Po Chen,1 Wai Fong Tse,1 and C. C. Yang1

1National Taiwan University, Taiwan, 2Zhengzhou University, China

J3-2 (Oral) 17:40 - 17:55Towards 3D DUV Emitters: Strain Management in GaN/AlGaN Microfin Core-Shell-StructuresChristoph Margenfeld,1,3 Jana Hartmann,1,3 Hao Zhou,1 Hendrik Spende,1,3 Heiko Bremers,2,3 AndreasHangleiter,2,3 Hans-Jürgen Lugauer,4 Hergo-Heinrich Wehmann,1,3 and Andreas Waag1,3

1Institute of Semiconductor Technology and epitaxy competence center ec2, Technische Universität Braunschweig, Germany,2Institute of Applied Physics, Technische Universität Braunschweig, Germany, 3Laboratory for Emerging Nanometrology,Technische Universität Braunschweig, Germany, 4Osram Opto Semiconductors GmbH, Germany

J3-3 (Oral) 17:55 - 18:10Pendeo epitaxy of GaN on SOI nano-pillars: an innovative approach to defectengineering in GaN epilayersRoy Dagher,1 Blandine Alloing ,2 Virginie Brandli ,2 Maud Nemoz,2 Jesus Zuniga Perez,2 and Guy Feuillet1

1Université Grenoble Alpes, CEA-LETI, France, 2Université Côte d’Azur, CRHEA-CNRS, France

DRAFT


J3-4 (Oral) 18:10 - 18:25Effect of Gallium Supersaturation on Shell Overgrowth of GaN FinsIrene Manglano Clavero,1,2 Jana Hartmann,1,2 Hergo-Heinrich Wehmann,1,2 Adrian Avramescu,3 Martin Straßburg,3

Hans-Jürgen Lugauer,3 and Andreas Waag3

1Institute of Semiconductor Techology and epitaxy competence center, ec2,TU Braunschweig, Germany, 2Laboratory of Emerg-ing Nanometrology, LENA, TU Braunschweig, Germany, 3OSRAM Opto Semiconductors GmbH, Germany

J3-5 (Oral) 18:25 - 18:40Selective area PAMBE growth of GaN nanowires by the use of amorphous AlxOynucleation layerMarta Maria Sobanska,1 Zbigniew R. Zytkiewicz,1 Kamil Klosek,1 Renata Kruszka,2 Krystyna Golaszewska,2 andSylwia Gieraltowska1

1Institute of Physics of Polish Academy of Sciences, Poland, 2Institute of Electron Technology, Poland

J3-6 (Oral) 18:40 - 18:55Selective-area growth and optical properties of GaN nanowires on transferredgrapheneMartina Morassi,1 Nan Guan,1 Camille Barbier,1 Vladimir Dubrovskii,2,3 Lorenzo Mancini,1 Andrey Babichev,2

Chiara Sinito,4 Oliver Brandt,4 Luts Geelhaar,4 Ali Madouri,1 Ludovic Largeau,1 Jean-René Coudevylle,1 FrancoisH. Julien,1 Noelle Gogneau,1 Jean-Christophe Harmand,1 and Maria Tchernycheva1

1Center for Nanoscience and Nanotechnology, University Paris-Sud & Paris-Saclay, CNRS, France, 2ITMO University,Russia, 3Ioffe Physical Technical Institute of the Russian Academy of Sciences, Russia, 4Paul-Drude-Institut für Festkör-perelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Germany

DRAFT

International Workshop on Nitride Semiconductors 2018 November 13 (Tue)

November 13 (Tue)

GR3 HVPE Hogaku （邦楽） 08:30-10:20

GR3-1 (Invited) 08:30 - 08:55Ultra-low resistive GaN substrates produced by slicing the heavily Ge-doped HVPE-GaN boulesTakehiro Yoshida, Tetsuji Fujimoto, Toshio Kitamura, Takayuki Suzuki, and Hajime FujikuraSciocs company limited, Japan

GR3-2 (Invited) 08:55 - 09:20Key issues in growth of bulk GaN by HVPE technology and recent progressKe XuChinese Academy of Sciences, China

GR3-3 (Oral) 09:20 - 09:35Mechanism on the annihilation of the V-shaped pit in GaN (0001) grown by HVPEKenji Iso, Hirotaka Ikeda, Riki Gouda, Tae Mochizuki, and Satoru IzumisawaMitsubishi Chemical, Japan

GR3-4 (Oral) 09:35 - 09:50Crystallization of GaN by HVPE method with controlled lateral growthTomasz Sochacki,1 Slawek Sakowski,1 Boleslaw Lucznik,1 Mikolaj Amilusik,1 Michal Fijalkowski,1 MalgorzataIwinska,1 Aneta Sidor,1 Izabella Grzegory,1 and Michal Bockowski1,2

1Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2Center for Integrated Research of Future Electronics,Institute of Materials and Systems for Sustainability, Nagoya University, Japan

GR3-5 (Oral) 09:50 - 10:05Highly resistive HVPE-GaN grown on native seeds - investigation and comparisonof different dopantsMalgorzata IwinskaInstitute of High Pressure Physics Polish Academy of Sciences, Poland

GR3-6 (Oral) 10:05 - 10:20Gradient of silicon concentration in HVPE-GaNBoleslaw Ludwik Lucznik, Mikolaj Amilusik, Michal Fijalkowski, Tomasz Sochacki, Malgorzata Iwinska, IzabellaGrzegory, and Michal BockowskiInstitute of High Pressure Physics, PAS, Poland

DRAFT


CR5 Defect Characterization I Ohtori 1（鳳 1） 08:30-10:25

CR5-1 (Invited) 08:30 - 08:55Defect characterization in nitride semiconductor bulk materialsAkira SakaiGraduate School of Engineering Science, Osaka University, Japan

CR5-2 (Oral) 08:55 - 09:10Electronic structures for threading dislocations in GaNTakashi Nakano,1 Kenta Chokawa,1 Masaaki Araidai,1,2 Kenji Shiraishi,1,2 Atsushi Oshiyama,2 Atsushi Tanaka,2

Yoshio Honda,2 and Hiroshi Amano2

1Graduate School of Engineering, Nagoya University, Japan, 2Institute of Materials and Systems for Sustainability, NagoyaUniversity, Japan

CR5-3 (Oral) 09:10 - 09:25Quantitative analysis of lattice plane microstructure in the growth direction of amodified Na-flux GaN crystal using nanobeam X-ray diffractionKazuki Shida,1 Nozomi Yamamoto,1 Tetsuya Tohei,1 Masayuki Imanishi,2 Yusuke Mori,2 Kazushi Sumitani,3 Ya-suhiko Imai,3 Shigeru Kimura,3 and Akira Sakai11Graduate School of Engineering Science, Osaka University, Japan, 2Graduate School of Engineering, Osaka University,Japan, 3Japan Synchrotron Radiation Research Institute, Japan

CR5-4 (Oral) 09:25 - 09:40Recovery via dislocation climb in AlN epitaxial thin layers on sapphire by hightemperature annealingShun Washiyama,1 Andrew Klump,1 Yan Guan,1 Qiang Guo,1 Ronny Kirste,2 Seiji Mita,2 Ramon Collazo,1 andZlatko Sitar1,2


CR5-5 (Oral) 09:40 - 09:55Observation of dislocations and their arrays in AlN single crystal by synchrotronX-ray topographyY. Yao,1 Y. Sugawara,1 Y. Ishikawa,1 N. Okada,2 R. Inomoto,2 K. Tadatomo,2 Y. Takahashi,3 and K. Hirano4

1JFCC, Japan, 2Yamaguchi Univ., Japan, 3Nihon Univ., Japan, 4KEK, Japan

CR5-6 (Oral) 09:55 - 10:10Investigation of stacking faults in zincblende GaN grown on 3C-SiC/Si templateswith TEM and XRDLok Yi Lee,1 Petr Vacek,1 Martin Frentrup,1 Menno J. Kappers,1 Rachel A. Oliver,1 and David J. Wallis1,2

1Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom, 2Centre for High FrequencyEngineering, University of Cardiff, United Kingdom

DRAFT


CR5-7 (Oral) 10:10 - 10:25Photoluminescence of stacking faults in zincblende GaN epilayersStephen A. Church,1 Simon Hammersley,1 Peter W. Mitchell,1 Menno J. Kappers,2 Lok Yi Li,2 Fabien C-P Massabuau,2

Suman-Lata Sahonta,2 Martin Frentrup,2 Jill Shaw,3 David J. Wallis,2,4 Colin J. Humphreys,2 Rachel A. Oliver,2 DavidJ. Binks,1 and Philip Dawson1

1Photon Science Institute, School of Physics and Astronomy, University of Manchester, United Kingdom, 2Department ofMaterials Science and Metallurgy, University of Cambridge, United Kingdom, 3Anvil Semiconductors Ltd., United Kingdom,4Centre for High Frequency Engineering, University of Cardiff, United Kingdom

OD2 Micro LED Ohtori 2 （鳳 2） 08:30-10:25

OD2-1 (Invited) 08:30 - 08:55GaN-based micro superluminescent light emitting diodesHezhi Zhang, Denis Martin, Alexander Caut, Ching-wen Shih, Jean-François Carlin, Raphaël Butté, and NicolasGrandjeanInstitute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland

OD2-2 (Oral) 08:55 - 09:10Nanoscale GaN LED arrays for chip-based optical nanoscopeHutomo Suryo Wasisto,1 Jan Gülink,1 Steffen Bornemann,1 Sindhuri Vodapally,1 Klaas Strempel,1 Shinta Mariana,1

Tony Granz,1 Gregor Scholz,1 Agus Budi Dharmawan,1,2 Matthias Auf der Maur,3 Aldo di Carlo,3 NicolaiMarkiewicz,1,4 Joan Daniel Prades,4 and Andreas Waag1

1Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische UniversitätBraunschweig, Germany, 2Faculty of Information Technology, Tarumanagara University, Indonesia, 3Department of ElectronicEngineering, University of Rome Tor Vergata, Italy, 4Department of Electronic and Biomedical Engineering, University ofBarcelona, Spain

OD2-3 (Oral) 09:10 - 09:25Reduction in Leakage Current of III-Nitride Mirco-Light-Emitting Diodes by Chem-ical Treatment and Sidewall PassivationMatthew S. Wong,1 David Hwang,1 Lesley Chan,2 Shuji Nakamura,1,3 and Steven P. DenBaars1,3

1Materials Department, University of California, Santa Barbara, United States of America, 2Department of Chemical En-gineering, University of California, Santa Barbara, United States of America, 3Department of Electrical and ComputerEngineering, University of California, Santa Barbara, United States of America

OD2-4 (Oral) 09:25 - 09:40MOVPE and processing of blue micro-sized LEDs on Si(111) for optogenetic appli-cationsSilvio Neugebauer,1 Jürgen Bläsing,1 Martin Deckert,2 Michael Lippert,3 Armin Dadgar,1 Bertram Schmidt,2 FrankOhl,3 and André Strittmatter1

1Institute of Physics, Otto-von-Guericke University Magdeburg, Germany, 2Institute for Mikro and Sensor Systems, Otto-von-Guericke University Magdeburg, Germany, 3Department of Systemphysiology of Learning, Leibniz Institute for NeurobiologyMagdeburg, Germany

DRAFT


OD2-5 (Oral) 09:40 - 09:55Optical characterization of nitride-based multi-color micro-LEDsYoann Robin,1 François Hemeret,2 Gillian D’Inca,2 Markus Pristovsek,1 Agnès Trassoudaine,3 and Hiroshi Amano1

1Institute of Materials and Systems for Sustainability, Nagoya University, Japan, 2I.U.T. Clermont Auvergne University,France, 3Pascal Institute, Clermont Auvergne University, France

OD2-6 (Oral) 09:55 - 10:10Active Matrix LED Micro Display using GaN-on-Si epilayersXu Zhang, Peian Li, Xinbo Zou, Junmin Jiang, Shing Hin Yuen, Chak Wah Tang, and Kei May LauDepartment of Electronic and Computer Engineering, HKUST, Hong Kong

OD2-7 (Oral) 10:10 - 10:25Development of integrated blue µµµLED neural probes for optogenetic stimulation inthe depth directionHiroki Yasunaga and Hiroto SekiguchiToyohashi University of Technology, Japan

ED3 MOS Ohtori 3 （鳳 3） 08:30-10:25

ED3-1 (Invited) 08:30 - 08:55Systematical investigation on GaN inversion MOSFETs on GaN substrate with epi-taxial p-body and Mg-implanted p-bodyShinya TakashimaFuji Electric Co., Ltd., Japan

ED3-2 (Oral) 08:55 - 09:10Mobility enhancement in AlGaN/GaN MOS-HFET with gate recess etching by usingAlON gate insulatorTakuji Hosoi, Kenta Watanabe, Mikito Nozaki, Takahiro Yamada, Takayoshi Shimura, and Heiji WatanabeOsaka University, Japan

ED3-3 (Oral) 09:10 - 09:25Effects of annealing ambient on ALD-Al2O3/AlGaN/GaN MIS-HEMTsToshiharu Kubo, Keita Furuoka, Makoto Miyoshi, and Takashi EgawaNagoya Institute of Technology, Japan

ED3-4 (Oral) 09:25 - 09:40Demonstration of MOSFETs with ALD-AlSiO gate oxides on p-type GaNDaigo Kikuta,1 Kenji Ito,1 Tetsuo Narita,1 and Tetsu Kachi21Toyota Central R&D Labs., Inc., Japan, 2Nagoya University, Japan

ED3-5 (Oral) 09:40 - 09:55Characterization of Al2O3 MOS structures fabricated on high-temperature annealedGaN surfacesTatsuya Oyobiki and Tamotsu HashizumeReserch Center for Integrated Quantum Electronics, Hokkaido University, Japan

DRAFT


ED3-6 (Oral) 09:55 - 10:10Improvement of channel mobility by gate-dielectric annealing and recessed-GaNsurface treatment in GaN-MOSFETYosuke Kajiwara,1 Aya Shindome,1 Toshiki Hikosaka,1 Akira Yoshioka,2 Masahiko Kuraguchi,1 and Shinya Nunoue1

1Corporate Research & Development Center, Center, Toshiba Corporation, Japan, 2Advanced Device Development Center,Toshiba Electronic Device & Storage Corporation, Japan

ED3-7 (Oral) 10:10 - 10:25Suppression of plasma-induced damage by multistep ICP-RIE confirmed by directelectrical characterization of ultra-smooth GaN trench sidewallShinji Yamada,1,2 Hideki Sakurai,1,2 Masato Omori,1 Yamato Osada,2 Kanji Furuta,2 Ryuichiro Kamimura,2 TetsuoNarita,3 Jun Suda,1 and Tetsu Kachi11Nagoya University, Japan, 2ULVAC, Inc., Japan, 3Toyota Central R&D Labs., Inc., Japan

CR6 Carrier & Phonon Dynamics in GaN Zuiun 1 （瑞雲 1） 08:30-10:25

CR6-1 (Invited) 08:30 - 08:55Statistics of excitonic energy states based on phonon-exciton-radiation modelYoshihiro Ishitani, Kensuke Oki, Tsubasa Yamakawa, Bojin Lin, and Bei MaChiba University, Japan

CR6-2 (Oral) 08:55 - 09:10Propagation of polaritons in GaN waveguides up to 300KChristelle Brimont,1 Thierry Guillet,1 Laetitia Doyennette,1 Francois Réveret,2 Pierre Disseix,2 Francois Médard,2 JoelLeymarie,2 Maksym Gromovyi,3 Blandine Alloing,3 Stephanie Rennesson,3 Fabrice Semond,3 Jesus Zuniga-Perez,3

Edmond Cambril,4 and Sophie Bouchoule4

1Laboratoire Charles Coulomb (L2C), Université de Montpellier, CNRS, Montpellier, France, 2Institut Pascal, PHOTON-N2,University Clermont Auvergne, Aubière, France, 3UCA, CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, France,4Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, France

CR6-3 (Oral) 09:10 - 09:25The collexon - a novel quasiparticle in heavily doped GaN stabilized by a degenerateelectron gasMarkus R. Wagner,1 Christian Nenstiel,1 Gordon Callsen,1 Felix Nippert,1 Thomas Kure,1 Sarah Schlichting,1 NadjaJankowski,1 Marc P. Hoffmann,2 Armin Dadgar,2 Stefanie Fritze,2 Alois Krost,2 Friedhelm Bechstedt,3 and AxelHoffmann1

1Technische Universität Berlin, Institut für Festkörperphysik, Berlin, Germany, 2OvG-Universität Magdeburg, Insitut fürExperimentelle Physik, Magdeburg, Germany, 3Friedrich-Schiller-Universität, Insitut für Festkörpertheorie und -optik, Jena,Germany

CR6-4 (Oral) 09:25 - 09:40Analysis of slow decays in TR-PL signals from a GaN homoepitaxial layerMasashi Kato,1,3 Takato Asada,1 Kenji Ito,2 Kazuyoshi Tomita,2 Tetsuo Narita,2 and Tetsu Kachi31NITech, Japan, 2Toyota Central R&D Labs., Japan, 3Nagoya Univ., Japan

DRAFT


CR6-5 (Oral) 09:40 - 09:55Revision of the TO phonon frequencies in wurtzite and zincblende GaNMartin Feneberg,1 Elias Baron,1 Elias Kluth,1 Karsten Lange,1 Donat J. As,2 Michael Deppe,2 Fabian Tacken,2

Matthias Wieneke,1 Jürgen Bläsing,1 Hartmut Witte,1 Armin Dadgar,1 and Rüdiger Goldhahn1

1Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Germany, 2Experimentalphysik, Universität Paderborn,Germany

CR6-6 (Oral) 09:55 - 10:10Room-temperature photoluminescence lifetime for the near-band-edge emission ofepitaxial and ion-implanted Mg-doped GaN on GaN structuresShigefusa F. Chichibu,1,2,3 Kohei Shima,1 Kazunobu Kojima,1 Shinya Takashima,4 Katsunori Ueno,4 Masaharu Edo,4

Hiroko Iguchi,5 Tetsuo Narita,5 Keita Kataoka,5 Shoji Ishibashi,6 and Akira Uedono7

1Insitiute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan, 2Institute of Materials and Systemsfor Sustainability„ Nagoya University, Japan, 3Research Center for Integrated Quantum Electronics, Hokkaido University,Japan, 4Fuji Electric Co., Ltd., Japan, 5Toyota Central R&D Labs, Japan, 6CD-FMat, National Institute of Advanced IndustrialScience and Technology, Japan, 7Institute of Applied Physics, University of Tsukuba, Japan

CR6-7 (Oral) 10:10 - 10:25Optimizing free carrier compensation in HVPE and MBE epitaxial GaN filmsJaime A. Freitas,1 Eberhard Richter,2 M. Weyers,2 David F. Storm,1 and Evan R. Glaser1

1Naval Research Laboratory, United States of America, 2Ferdinand-Braun-Institut, Germany

OD3 Photodetectors Zuiun 2 （瑞雲 2） 08:30-10:25

OD3-1 (Invited) 08:30 - 08:55Realization of high photosensitivity AlGaN-based photosensorsMotoaki Iwaya,1 Tetsuya Takeuchi,1 Satoshi Kamiyama,1 Isamu Akasaki,1,2 and Akira Yoshikawa3

1Department of Materials Science and Engineering, Meijo Univ., Japan, 2Akasaki Research Center, Nagoya Univ., Japan,3UVC project, Asahi-Kasei Corporation, Japan

OD3-2 (Oral) 08:55 - 09:10Selfpowered Ultrahigh responsivity of visible-IR blind nonpolar a-GaN based se-lective UV-A MSM photodetectorsRohit Kumar Pant, Deependra Kumar Singh, Arun Malla Chowdhury, Basanta Roul, Greeshma Chandan, K KNanda, and S B KrupanidhiIndian Institute of Science Bangalore, India

OD3-3 (Oral) 09:10 - 09:25Degradation of AlGaN-based metal-semiconductor-metal photodetectorsMoritz Brendel, Sylvia Hagedorn, Frank Brunner, Maria Reiner, Ute Zeimer, and Markus WeyersFerdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany

OD3-4 (Oral) 09:25 - 09:40Influence of trap level on Al0.6Ga0.4N/Al0.5Ga0.5N-MSM UV photodetectorAkira Yoshikawa,1,3 Saki Ushida,1 Motoaki Iwaya,1 Tetsuya Takeuchi,1 Satoshi Kamiyama,1 and Isamu Akasaki1,2

1Meijo university, Japan, 2Nagoya university, Japan, 3Asahi-Kasei corporation, Japan

DRAFT


OD3-5 (Oral) 09:40 - 09:55Impact ionization of electrons and holes in high Al-content AlGaN-based avalanchephotodiodesLars Hahn, Thorsten Passow, Lutz Kirste, Frank Rutz, Rachid Driad, Stefano Leone, Robert Rehm, and OliverAmbacherFraunhofer Insitute for Applied Solidstate Physics IAF, Germany

OD3-6 (Oral) 09:55 - 10:10Self-powered Al0.40Ga0.60N p-i-n UV detectors with 67% external quantum efficiencyAnisha Kalra, Shashwat Rathkanthiwar, Rangarajan Muralidharan, Srinivasan Raghavan, and Digbijoy NeelimNathCentre for Nanoscience and Engineering, Indian Institute of Science, Bangalore, India , India

OD3-7 (Oral) 10:10 - 10:25X-ray detection using vertical GaN p-n diodes on a bulk substrateLeidang Zhou,1 Xing Lu,2 Xiaoping Ouyang,3 and Liang Chen3

1Xi’an Jiaotong University, China, 2South China University of Technology, China, 3Northwest Institute of Nuclear Technology,China

break 10:25 - 10:55

GR4 Liquid Growth Hogaku （邦楽） 10:55-12:45

GR4-1 (Invited) 10:55 - 11:20Recent progress of large size bulk GaN crystal growth by acidic ammonothermalmethodM. Saito(*1,*2), Q. Bao(*1,*3), K. Shima(*1), D. Tomida(*1), K. Kojima(*1), T. Ishiguro(*1) and S. F. Chichibu(*1)(*1)IMRAM-Tohoku Univ., Japan (*2)Mitsubishi Chemical Corp., Japan (*3)The Japan Steel Works, Ltd., Japan

GR4-2 (Oral) 11:20 - 11:35Two inch GaN substrates fabricated by the near equilibrium ammonothermal(NEAT) methodTadao Hashimoto, Edward R. Letts, and Daryl KeySixPoint Materials, Inc., United States of America

GR4-3 (Oral) 11:35 - 11:50Lateral growth in ammonobasic crystallization of bulk GaNRobert Kucharski,1 Karolina Grabianska,1 Anna Gwardys-Bak,1 Marcin Zajac,1 Arkadiusz Puchalski,1 JaroslawDomagala,2 Tomasz Sochacki,1 and Michal Bockowski1,3

1Institute of High Pressure Physics, Polish Academy of Sciences, Poland, 2Institute of Physics, Polish Academy of Sciences,Poland, 3Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, NagoyaUniversity, Japan

DRAFT


GR4-4 (Invited) 11:50 - 12:15GaN crystal growth by Na flux point seed methodMasayuki Imanishi, Masashi Yoshimura, and Yusuke MoriOsaka University , Japan

GR4-5 (Oral) 12:15 - 12:30Growth of 3-inch GaN Single Crystal by Na Flux MethodZong liang Liu,1 Guo qiang Ren,1,2 Xu jun Su,1 Jian feng Wang,1,2 and Ke Xu1,2

1Suzhou Institute of Nano-tech and Nano-bionics, CAS, China, 2Suzhou Nanowin Science and Technology Co., Ltd., China

GR4-6 (Oral) 12:30 - 12:45Fabrication of large-diameter GaN substrate with low curvature using the sapphiredissolution technique in the Na-flux growthTakumi Yamada, Masayuki Imanishi, Kosuke Murakami, Kosuke Nakamura, Masashi Yoshimura, and YusukeMoriOsaka University, Japan

CR7 Defect Characterization II Ohtori 1（鳳 1） 10:55-12:50

CR7-1 (Invited) 10:55 - 11:20Nondestructive analysis of threading dislocations in HVPE-grown GaN crystalsusing multiphoton-excitation photoluminescenceTomoyuki Tanikawa,1 Takehiro Yoshida,2 and Takashi Matsuoka1

1Institute for Materials Research, Tohoku University, Japan, 2SCIOCS Co. Ltd., Japan

CR7-2 (Oral) 11:20 - 11:35Local electrical and structural analysis for threading dislocations in the modifiedNa-flux GaN bulk single crystalsTakeaki Hamachi,1 Tetsuya Tohei,1 Masayuki Imanishi,2 Yusuke Mori,2 and Akira Sakai11Graduate School of Engineering Science, Osaka University, Japan, 2Graduate School of Engineering, Osaka University, Japan

CR7-3 (Oral) 11:35 - 11:50Nondestructive Visualization of Threading Dislocations in GaN by Micro RamanMappingNobuhiko Kokubo,1,2 Yosuke Tsunooka,1,2 Fumihiro Fujie,2 Junji Ohara,2 Shoichi Onda,2 Hisashi Yamada,1 MitsuakiShimizu,1,2 Shunta Harada,2 Miho Tagawa,2 and Toru Ujihara1,2

1National Institute of Advanced Industrial Science and Technology (AIST), Japan, 2Nagoya University, Japan

CR7-4 (Oral) 11:50 - 12:05Comprehensive Study of Native Oxides on GaN(0001)Yoshihiro Irokawa, Kazutaka Mitsuishi, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, TsuyoshiOhnishi, Koji Kimoto, and Yasuo KoideNational Institute for Materials Science, Japan

DRAFT


CR7-5 (Oral) 12:05 - 12:20Optical and structural properties of threading dislocations in InGaNFabien C-P Massabuau,1 Matthew K. Horton,2 Emma Pearce,1 Simon Hammersley,3 Peiyu Chen,1 Marcin S.Zielinski,4 Thomas F K Weatherley,1 Paul R. Edwards,5 Menno J. Kappers,1 Clifford McAleese,1 Colin J. Humphreys,1

Philip Dwason,6 and Rachel A. Oliver1

1Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom, 2Materials Science andEngineering, University of California Berkeley, United States of America, 3School of Electrical and Electronic Engineering,University of Manchester, United Kingdom, 4Attolight AG, EPFL Innovation Park, Switzerland, 5Department of Physics,SUPA, University of Strathclyde, United Kingdom, 6School of Physics and Astronomy, Photon Science Institute, Universityof Manchester, United Kingdom

CR7-6 (Oral) 12:20 - 12:35Influence of doping on thermal degradation mechanism of InGaN QWsJulita Smalc-Koziorowska, Ewa Grzanka, Artur Lachowski, Lucja Marona, Robert Czernecki, and Michal Leszczyn-skiInstitute of High Pressure Physics, PAS, Poland

CR7-7 (Oral) 12:35 - 12:50Physical model for the microstructural evolution in epitaxial AlN on sapphire uponhigh-temperature annealingLeonardo Cancellara,1 Sylvia Hagedorn,2 Sebastian Walde,2 Dominik Jaeger,3 Shun Washiyama,4 Ivan Gamov,1

Klaus Irmscher,1 Toni Markurt,1 Ramon Collazo,4 Zlatko Sitar,4 Markus Weyers,2 and Martin Albrecht1

1IKZ, Leibniz-Institute for Crystal Growth, Germany, 2Ferdinand-Braun-Institut, Germany, 3Evatec AG, Switzerland, 4NorthCarolina State University, United States of America

OD4 Device Physics Ohtori 2 （鳳 2） 10:55-12:50

OD4-1 (Invited) 10:55 - 11:20Longitudinal mode dynamics in green InGaN laser diodes during short pulse oper-ationLukas Uhlig, Matthias Wachs, Dominic Juergen Kunzmann, and Ulrich Theodor SchwarzChemnitz University of Technology, Germany

OD4-2 (Oral) 11:20 - 11:35Highly efficient optical transition between excited states in wide InGaN quantumwellsGrzegorz Muziol,1 Henryk Turski,1 Marcin Siekacz,1 Krzesimir Nowakowski-Szkudlarek,1 Lukasz Janicki,2 Sebas-tian Zolud,2 Robert Kudrawiec,2 Tadek Suski,1 Piotr Perlin,1,3 and Czeslaw Skierbiszewski1,3

1Institute of High Pressure Physics PAS, Poland, 2Wroclaw University of Science and Technology, Poland, 3TopGaN Ltd,Poland

OD4-3 (Oral) 11:35 - 11:50Broadening mechanisms and self-consistent gain calculations for GaN quantumcascade laser structuresKe Wang,1 Tsung-Tse Lin,1 Li Wang,1 Joosun Yun,1 Wataru Terashima,1 Hideki Hirayama,1 Thomas Grange,2 ZoltánJéhn,2 and Stefan Birner2

1THz quantum device laboratory, RAP, RIKEN, Japan, 2nextnano GmbH, Garching b. München, Germany

DRAFT


OD4-4 (Oral) 11:50 - 12:05Electro-optical investigation of the lateral dipole moments in non-polar InGaNquantum dotsClaudius Christian Kocher,1 Tim Puchtler,1 John C. Jarman,2 Tongtong Zhu,2 Tong Wang,1 Luke Nuttall,1 Rachel A.Oliver,2 and Robert Anthony Taylor1

1Departement of Physics, Univerisity of Oxford, United Kingdom, 2Departement of Material Science and Metallurgy, Uni-versity of Cambridge, United Kingdom

OD4-5 (Oral) 12:05 - 12:20Phase transition of indirect excitons in GaN quantum wellsThierry Guillet,1 François Chiaruttini,1 Christelle Brimont,1 Thierry Bretagnon,1 Laetitia Doyennette,1 PierreLefebvre,1 Pierre Valvin,1 Benjamin Damilano,2 Sébastien Chenot,2 Yvon Cordier,2 and Masha Vladimirova1

1Laboratoire Charles Coulomb (L2C), Université de Montpellier, CNRS, France, 2CRHEA-CNRS, UCA, France

OD4-6 (Oral) 12:20 - 12:35Influence of Quantum Confined Stark Effect on the emission properties of InGaNlaser diodes, LEDs and superluminescent diodes.Anna Kafar,1,2 Szymon Stanczyk,1,2 Szymon Grzanka,1,2 Dario Schiavon,1,2 Katarzyna Pieniak,1 Tadeusz Suski,1

and Piotr Perlin1,2

1Institute of High Pressure Physics of the Polish Academy of Sciences, Poland, 2TopGaN Ltd., Poland

OD4-7 (Oral) 12:35 - 12:50Hysteretic photochromic switching in doubly doped GaN(Mg):EuKevin Peter ODonnell,1 Paul Edwards,1 Daniel Dyer,1 Ahna Taylor,1 Douglas Cameron,1 Akhilesh Kumar Singh,2

Mitsuo Yamaga,3 Jacob Leach,4 Menno Kappers,6 Katharina Lorenz,5 and Michal Bockowsky7

1Strathclyde University, United Kingdom, 2CSIR-NPL Delhi, India, 3Gifu University, Japan, 4KYMA Technologies, UnitedStates of America, 5IST and INESC-MN Lisbon, Portugal, 6University of Cambridge, United Kingdom, 7Institute of HighPressure Physics, Poland

ED4 RF Devices Ohtori 3 （鳳 3） 10:55-12:45

ED4-1 (Invited) 10:55 - 11:20Development of GaN-Based Field Effect Transistors with Laterally-Gated Multiple2DEG Channels for High Power and LinearityKeisuke Shinohara,1 Casey King,1 Eric J. Regan,1 Joshua Bergman,1 Andrew D. Carter,1 Andrea Arias,1 MiguelUrteaga,1 Berinder Brar,1 Ryan Page,2 Reet Chaudhuri,2 Moudud Islam,2 Huili Xing,2 and Debdeep Jena2

1Teledyne Scientific & Imaging, United States of America, 2Cornell University, United States of America

ED4-2 (Invited) 11:20 - 11:45IAF GaN-technology development towards 100 GHz and beyondPeter Brueckner, Sebastian Krause, Maciej Cwiklinski, Michael Dammann, and Ruediger QuayFraunhofer Institute for Applied Solid State Physics, Germany

DRAFT


ED4-3 (Oral) 11:45 - 12:00First demonstration of RF GaN-based transistors using buffer-free heterostructureswith low trapping effectsRomain Pecheux,2 Riad Kabouche,1 Malek Zegaoui,1 Jr-Tai Chen,3 Olof Kordina,3 and Farid Medjdoub1

1IEMN, France, 2Thales LAS France, France, 3SweGaN, Sweden

ED4-4 (Oral) 12:00 - 12:15Al0.57In0.01Ga0.42N/AlN/GaN HEMTs grown on Si with High f T / f Max of 145/215 GHzand Low Gate LeakageYu Zhou,1 Shujun Dai,1 Kai Zhang,2 Hongwei Gao,1 Qian Sun,1 Tangsheng Chen,2 and Hui Yang1

1Key Laboratory of Nano-devices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy ofSciences, China, 2Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing ElectronicDevices Institute, China

ED4-5 (Oral) 12:15 - 12:30RF Performance and Small-signal Characteristic Analysis for AlGaN/GaN Multi-finHEMTsHengshuang Zhang, Xiaohua Ma, Meng Zhang, Ziyue Zhao, Chupeng Yi, Yang Lu, and Yue HaoXidian University, China

ED4-6 (Oral) 12:30 - 12:45A 21.2-27.8 GHz GaN Low Noise Amplifier With 1.3dB Noise Figure and 25dBmSaturated Output PowerPenghui zheng and Xiaodong TongMicrosystem & Terahertz Research Center, China Academy of Engineering Physics, China

J4 (GR/CR) InAlN & InAlGaN Zuiun 1 （瑞雲 1） 10:55-12:50

J4-1 (Invited) 10:55 - 11:20InAlN optoelectronic properties and potential application for Deep UVLEDsPeter J. Parbrook,1,2 Vitaly Z. Zubialevich,1 and Pietro Pampili1,2

1Tyndall National Institude, University College Cork, Ireland, 2School of Engineering, University College Cork, Ireland

J4-2 (Oral) 11:20 - 11:35Compositional homogeneity and nano-scale clustering in InAlGaN layers for UV-BLEDsGunnar Kusch,1 Johannes Enslin,2 Lucia Spasevski,1 Tolga Teke,2 Christoph Reich,2 Bettina Neuschulz,2 TimWernicke,2 Paul R. Edwards,1 Michael Kneissl,2 and Robert W. Martin1

1University of Strathclyde, United Kingdom, 2Technische Universität Berlin, Germany

J4-3 (Oral) 11:35 - 11:50Indium incorporation in quaternary InxAlyGa1-x-yN for UVB-LEDsTim Wernicke,1 Johannes Enslin,1 Gunnar Kusch,2 Anna Lobanova,3 Tolga Teke,1 Roman Talalaev,3 Robert Martin,2

and Michael Kneissl11Technische Universität Berlin, Institute of Solid State Physics, Germany, 2Department of Physics, SUPA, University ofStrathclyde, United Kingdom, 3STR Group Inc., Russia

DRAFT


J4-4 (Oral) 11:50 - 12:05MOCVD growth of 300-nm-thick epitaxial AlInN films on GaN/sapphire templatesand free-standing GaN substratesMizuki Yamanaka,1 Makoto Miyoshi,1 Takashi Egawa,1 and Tetsuya Takeuchi21Nagoya Institute of Technology, Japan, 2Meijo University, Japan

J4-5 (Oral) 12:05 - 12:20Challenge to MOVPE growth of N-polar InAlN film with high InN mole fractionShigeyuki Kuboya, Kazuyo Omura, Tomoyuki Tanikawa, and Takashi MatsuokaInstitute for Materials Research, Tohoku University, Japan

J4-6 (Oral) 12:20 - 12:35Microscopic interface and composition analysis of nonpolar AlInN/GaNPhilipp Horenburg,1 Heiko Bremers,1 Robert Imlau,2 Uwe Rossow,1 and Andreas Hangleiter1

1Braunschweig University of Technology, Germany, 2Thermo Fisher Scientific, Netherlands

J4-7 (Oral) 12:35 - 12:50On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors to heavy-ionirradiationSeshagiri Rao Challa,1 Nahuel Agustín Vega,2,3,4 Christian Kristukat,2,3 Nahuel Agustín Müller,2 Mario E Debray,2,3

Gordon Schmidt,1 Jürgen Christen,1 Florian Hoerich,1 Hartmut Witte,1 Armin Dadgar,1 and André Strittmatter1

1Institut Für Physik, Otto-von-guericke-universität Magdeburg, Germany, 2Gerencia de Investigación y Aplicaciones, CNEA,Argentina, 3Escuela de Ciencia y Tecnología, Universidad Nacional de San Martín (UNSAM), Argentina, 4Consejo Nacionalde Investigaciones Científicas y Tecnológicas (CONICET), Argentina

OD5 InGaN LED I Zuiun 2 （瑞雲 2） 10:55-12:45

OD5-1 (Invited) 10:55 - 11:20Efficiency of III-Nitride LEDs: Defect-assisted droop and the green gapAurelien David, Christophe A. Hurni, Nathan G. Young, and Michael D. CravenSoraa Inc., United States of America

OD5-2 (Invited) 11:20 - 11:45Recombination Dynamics and Internal Quantum Efficiency of InGaN Light-Emitting DiodesJong-In Shim,1 Dong-Soo Shin,1 and Hyundon Jung2

1Hanyang University ERICA, Republic of Korea, 2EtaMax Co., Republic of Korea

OD5-3 (Oral) 11:45 - 12:00Determination of Internal Quantum Efficiency in Light-emitting Diode under Elec-trical Injection: IQE Degradation Mechanism AnalysisDong-Pyo Han,1 Kengo Yamamoto,1 Seiji Ishimoto,1 Ryoya Mano,1 Motoaki Iwaya,1 Tetsuya Takeuchi,1 SatoshiKamiyama,1 and Isamu Akasaki1,2

1Meijo University, Japan, 2Akasaki Research Center, Japan

DRAFT


OD5-4 (Oral) 12:00 - 12:15The Impact of In Clustering on the Optical Properties of InGaN/GaN Single Quan-tum Well Light Emitting DiodesAlessia Di Vito,1 Alessandro Pecchia,2 Aldo Di Carlo,1 and Matthias Auf Der Maur1

1Department of Electronics Engineering, University of Rome Tor Vergata, Italy, 2CNR-ISMN, Italy

OD5-5 (Oral) 12:15 - 12:30Band Gap Engineering in Short Period In(Ga)N/GaN SuperlatticesIzabela Gorczyca,1 Tadek Suski,1 Grzegorz Staszczak,1 and Niels Egede Christensen2

1Institute of High Pressure Physics, UNIPRESS, Warsaw, Poland, 2Department of Physics and Astronomy, Aarhus University,Denmark

OD5-6 (Oral) 12:30 - 12:45Effect of die shape and size on performance of µµµ-LEDsKirill Bulashevich, Sergey Konoplev, and Sergey KarpovSTR Group - Soft-Impact, Ltd., 194044 St.Petersburg, Russia

lunch 12:50 - 14:50

GR5 AlGaN II Hogaku（邦楽） 14:50-16:40

GR5-1 (Invited) 14:50 - 15:15On the preparation of AlN single crystals and substrates for AlGaN devicesCarsten Hartmann, Juergen Wollweber, Andrea Dittmar, Ivan Gamov, Klaus Irmscher, and Matthias BickermannLeibniz Institute for Crystal Growth (IKZ) Berlin, Germany

GR5-2 (Invited) 15:15 - 15:40UV laser fabricated on relaxed AlGaN high temperature annealed and sputteredAlN Sapphire templatesYuta Kawase,1 Junya Ikeda,1 Yusuke Sakuragi,1 shinji Yasue,1 Sho Iwayama,1,3 Myunghee Kim,1 Motoaki Iwaya,1

Tetsuya Takeuchi,1 Satoshi Kamiyama,1 Isamu Akasaki,1,2 and Hideto Miyake3

1Department of Materials Science and Engineering, Meijo University, Japan, 2Akasaki Research Center, Nagoya University,Japan, 3Graduate School of Regional Innovation Studies, Mie University, Japan

GR5-3 (Oral) 15:40 - 15:55Growth of High-quality, UV-transparent Two-inch AlN Single CrystalKeisuke Yamaoka,1,2 Jianfeng Chen,1 Robert T. Bondokov,1 Murugesu Yoganathan,1 Takashi Suzuki,2 Shailaja P.Rao,1 Toru Kimura,1,2 Shichao Wang,1 Thomas Miebach,1 and Leo J. Schowalter1

1Crystal IS, Inc., United States of America, 2Asahi Kasei Corporation, Japan

GR5-4 (Oral) 15:55 - 16:10Improved Carrier Injection Efficiency of AlGaN-Based Deep Ultraviolet Light Emit-ting Diodes with Graded and Graded Superlattice p-AlGaN Electron Blocking Lay-ersByeongchan So, Jinwan Kim, Taeyoung Kim, Joohyoung Lee, Taemyung Kwak, Uiho Choi, and Okhyun NamKorea Polytechnic University, Republic of Korea

DRAFT


GR5-5 (Oral) 16:10 - 16:25Low Resistivity AlGaN by Polarization-Induced Doping on AlN SubstratesRafael Dalmau and Baxter MoodyHexaTech, Inc., United States of America

GR5-6 (Oral) 16:25 - 16:40Quaternary InAlGaN layers for efficient UVB-LEDsJohannes Enslin,1 Tolga Teke,1 Bettina Neuschulz,1 Christoph Reich,1 Gunnar Kusch,2 Lucia Spasevski,2 Paul R.Edwards,2 Tim Wernicke,1 Robert W. Martin,2 and Michael Kneissl11Institute of Solid State Physics, Technische Universität Berlin, Germany, 2Department of Physics, SUPA, University ofStrathclyde, United Kingdom

CR8 Impurities Ohtori 1（鳳 1） 14:50-16:45

CR8-1 (Invited) 14:50 - 15:15The Role and Mechanism of Carbon in Insulating GaN BuffersChristian Koller,1,3 Gregor Pobegen,1 Clemens Ostermaier,2 and Dionyz Pogany3

1KAI GmbH, Austria, 2Infineon Technologies, Austria, 3Institute of Solid State Electronics, Vienna University of Technology,Austria

CR8-2 (Oral) 15:15 - 15:30Amphoteric incorporation of carbon in GaNAxel Hoffmann,1 Nadja Jankowski,1 Emanuele Poliani,1 Harald Schell,1 Markus R. Wagner,1 A. Fariza,2 A. Lesnik,2

Marc P. Hoffmann,2 C. Kahrmann,2 F. Hörich,2 R. Zwieryz3, K. Kachel3, M Bieckermann3 Bläsing,2 A. Strittmatter,2

A. Dadgar,2 D. Siche,3 and M. Bieckermann3

1TU-Berlin, Institut für Festkörperphysik, Hardenbergstrasse 36, 10623 Berlin, Germany, 22Otto-von-Guericke-UniversitätMagdeburg, Institut für Physik, Fakultät für Naturwissenschaften, Universitätsplatz 2, 39106 Magdeburg, Germany,33Leibniz Institute for Crystal Growth, Berlin , Germany

CR8-3 (Oral) 15:30 - 15:45Unambiguous identification of Carbon location on N-Site in semi-insulating GaNShan Wu,1 Xuelin Yang,1 Haishan Zhang,2 Lin Shi,2 Weikun Ge,1 and Bo Shen1,3

1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China,2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China, 3Collaborative Innovation Center ofQuantum Matter, China

CR8-4 (Oral) 15:45 - 16:00Analysis of Mg-implanted GaN films after rapid activation via excimer laser anneal-ingJuan Paolo Soria Bermundo,1 Yuki Tada,1 Hiroshi Ikenoue,2 Mutsunori Uenuma,1 Yasuaki Ishikawa,1 and YukiharuUraoka1

1Nara Institute of Science and Technology, Japan, 2Kyushu University, Japan

DRAFT


CR8-5 (Oral) 16:00 - 16:15Role of Ga-vacancy related defects in transport properties of GaN:Mg semi-insulating crystals grown by ammonothermal methodMarcin Zajac,1 Ryszard Piotrzkowski,1 Elzbieta Litwin-Staszewska,1 Dariusz Wasik,2 Robert Kucharski,1 and MichalBockowski1,3

1Institute of High Pressure Physics, Polish Academy of Sciences, Poland, 2Faculty of Physics, University of Warsaw, Poland,3Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University,Japan

CR8-6 (Oral) 16:15 - 16:30Deep Level Study of Beryllium implanted MOCVD homoepitaxial GaNGiovanni Alfieri and Vinoth Kumar SundaramoorthyABB, Switzerland

CR8-7 (Oral) 16:30 - 16:45Donor Compensation in AlNDouglas L. Irving,1 Joshua S. Harris,1 Jonathon N. Baker,1 Shun Washiyama,1 M. Hayden Breckenridge,1 PramodReddy,2 Ramon Collazo,1 and Zlatko Sitar1,2

1Department of Materials Science and Engineering, North Carolina State University, United States of America, 2AdroitMaterials, United States of America

OD6 InGaN LED II Ohtori 2 （鳳 2） 14:50-16:40

OD6-1 (Invited) 14:50 - 15:15High-In-content InGaN-based amber, orange, red light-emitting diodesDaisuke Iida,1 Shen Lu,2 Sota Hirahara,2 Kazumasa Niwa,3 Satoshi Kamiyama,3 and Kazuhiro Ohkawa1

1Electrical Engineering, King Abdullah University of Science and Technology, Saudi Arabia, 2Department of Applied Physics,Tokyo University of Science, Japan, 3Faculty of Science and Technology, Meijo University, Japan

OD6-2 (Invited) 15:15 - 15:40Red electroluminescence with full InGaN based LED grown on InGaN pseudo-substrateAmelie Dussaigne,1 Armelle Even,1 Benjamin Samuel,1 Frederic Barbier,1 Matthieu Lafossas,1 Francois Levy,1 Ben-jamin Damilano,2 Sebastien Chenot,2 Olivier Ledoux,3 David Sotta,3 and Eric Guiot3

1Université Grenoble Alpes, CEA, LETI, Minatec campus, France, 2Université Côte d’Azur, CRHEA-CNRS, France, 3SoitecS.A., France

OD6-3 (Oral) 15:40 - 15:55Red-emitting InGaN quantum wells grown on In0.17Ga0.83N templates latticematched to ScAlMgO4 substratesKeita Maehara,1 Takuya Ozaki,2 Mitsuru Funato,1 and Yoichi Kawakami11Kyoto University, Japan, 2Nichia Corp, Japan

DRAFT


OD6-4 (Oral) 15:55 - 16:10Surface-plasmon-enhanced GaN:Eu-based light-emitting diodes utilizing silvernanoparticlesJun Tatebayashi, Tomoya Yamada, Tomohiro Inaba, Yoji Matsude, Shuhei Ichikawa, and Yasufumi FujiwaraOsaka Univ., Japan

OD6-5 (Oral) 16:10 - 16:25Broadband visible emission from InGaN/nano-AlN for phosphor-free white LEDTatsuya Arakawa, Yoshiaki Nakano, and Masakazu SugiyamaThe University of Tokyo, Japan

OD6-6 (Oral) 16:25 - 16:40Paths towards improved wall-plug efficiency of InGaN Green LEDsGuillaume Lheureux,1 Cheyenne Lynsky,1 Yuh-Renn Wu,2 Abdullah Alhassan,1 Bastien Bonef,1 Claude Weisbuch,1,3

and James S. Speck1

1Materials Department, University of California, Santa Barbara, United States of America, 2Department of Electrical Engi-neering, National Taiwan University, Taipei , Taiwan, 3Laboratoire de Physique de la Matière Condensée, Ecole polytechnique,CNRS, Université Paris Saclay, France

ED5 Process I Ohtori 3 （鳳 3） 14:50-16:35

ED5-1 (Oral) 14:50 - 15:05Effect of Photo-electrochemical Etching and Post-metallization Annealing on Gate-controllability of AlGaN/GaN High Electron Mobility TransistorsKeisuke Uemura,1 Manato Deki,2 Yoshio Honda,2 Hiroshi Amano,2 and Taketomo Sato1

1Research Center for Integrated Quantum Electronics, Hokkaido University, Japan, 2Institute of Materials and Systems forSustainability, Nagoya University, Japan

ED5-2 (Oral) 15:05 - 15:20Excellent Potential of Photoelectrochemical (PEC) Etching for Fabricating the Deep-trench of the Vertical GaN DevicesFumimasa Horikiri,1 Hiroshi Ohta,2 Naomi Asai,2 Yoshinobu Narita,1 Takehiro Yoshida,1 and Tomoyoshi Mishima2

1SCIOCS Co., Ltd., Japan, 2Hosei Univ., Japan

ED5-3 (Oral) 15:20 - 15:35Analysis of strain and dislocation evolution during MOCVD growth of AlGaN/GaNpower HEMT structureRoman Talalaev,1 Mikhail Rudinsky,1 Eugene Yakovlev,1 Tomas Novak,2 Petr Kostelnik,2 and Jan Sik2

1STR Group - Soft-Impact Ltd., Russia, 2ON Semiconductor Czech Republic, Czech Republic

ED5-4 (Oral) 15:35 - 15:50Room temperature GaN bonding by surface activated bonding methodFengwen Mu and Tadatomo SugaDepartment of Precision Engineering, The University of Tokyo, Japan

DRAFT


ED5-5 (Oral) 15:50 - 16:05In-situ N2O plasma treatment and its application to fabrication of inhibiting gateleakageXinchuang Zhang Zhang, Yunlong He He, Minhan Mi Mi, Bin Hou Hou, Xiaohua Ma Ma, and Yue Hao HaoSchool of Advanced Materials and Nanotechnology, Xidian University, China

ED5-6 (Oral) 16:05 - 16:20AlGaN/GaN HEMTs fabricated using AlGaN regrowth on RIE-GaN surfacesAkio Yamamoto, Keito Kanatani, and Masaaki KuzuharaGraduate School of Engineering, University of Fukui, Japan

ED5-7 (Oral) 16:20 - 16:35Distinctive dissociation processes of hydrogen from MOVPE-grown Mg-doped GaNlayers having different capping layersTetsuo Narita,1 Kazuyoshi Tomita,1 and Tetsu Kachi21Toyota Central R&D Labs. Inc., Japan, 2Nagoya University, Japan

CR9 Theory & Simulation Zuiun 1 （瑞雲 1） 14:50-16:35

CR9-1 (Oral) 14:50 - 15:05Impact of second-order piezoelectricity on built-in fields, electronic and opticalproperties of c- and non-c-plane heterostructuresSaroj Kanta Patra1,2 and Stefan Schulz1

1Tyndall National Institute, Ireland, 2Department of Electrical Engineering, University College Cork, Ireland

CR9-2 (Oral) 15:05 - 15:20Observation of TM Emission Enhancement due to Random Alloy Fluctuations inAlGaN based QW UVC-LEDs through 3D SimulationHung-Hsiang Chen,1 Claude Weisbuch,2,3 James S. Speck,3 and Yuh-Renn Wu1,4

1Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan, 2Laboratoire de Physique de laMatière Condensée, CNRS-Ecole Polytechnique, France, 3Materials Department, University of California, Santa Barbara,United States of America, 4Industrial Technology Research Institute, Hsinchu, Taiwan, Taiwan

CR9-3 (Oral) 15:20 - 15:35Structural analysis of polarity inversion boundary in sputtered AlN films annealedunder high temperaturesToru Akiyama,1 Motoshi Uchino,1 Kohji Nakamura,1 Tomonori Ito,1 Shiyu Xiao,2 and Hideto Miyake2,3

1Department of Physics Engineering, Mie University, Japan, 2Graduate School of Regional Innovation Studies, Mie University,Japan, 3Department of Electrical and Electronic Engineering, Mie University, Japan

CR9-4 (Oral) 15:35 - 15:50Systematic improvement of III-nitrides surface thermodynamics by including firstprinciples phonon calculationsPawel Kempisty1 and Yoshihiro Kangawa2,3

1Institute of High Pressure Physics PAS, Warsaw, Poland, 2RIAM, Kyushu University, Fukuoka, Japan, 3CIRFE IMaSS,Nagoya University, Nagoya, Japan

DRAFT


CR9-5 (Oral) 15:50 - 16:05Theoretical studies on phonon-related properties of GaNEmi Minamitani,1,2 Masayoshi Ogura,1 and Satoshi Watanabe1

1Department of Materials Engineering, The University of Tokyo, Japan, 2PRESTO, Japan Science and Technology Agency,Japan

CR9-6 (Oral) 16:05 - 16:20

DFT Simulations of Water adsorption and activation on the (0001) and (0001) surfacesof GaN with a native oxideRoozbeh Anvari,1,2 Dino Spagnoli,2 Giacinta Parish,1 and Brett Nener1

1School of Electrical, Electronics and Computer Engineering, University of Western Australia, Australia, 2School of MolecularSciences, University of Western Australia, Australia

CR9-7 (Oral) 16:20 - 16:35A Map of New Ternary Metal Nitride SemiconductorsWenhao Sun,1 Christopher Bartel,2 Elisabetta Arca,3 Sage Bauer,3 Bethany Matthews,4 Janet Tate,4 William Tumas,3

Andriy Zakutayev,3 Stephan Lany,3 Aaron Holder,3 and Gerbrand Ceder1,5

1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA , United States ofAmerica, 2Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309, USA,United States of America, 3National Renewable Energy Laboratory, Golden, Colorado 80401, USA, United States of America,4Department of Physics, Oregon State University, Corvallis, Oregon 97331, USA. , United States of America, 5Departmentof Materials Science and Engineering, UC Berkeley, Berkeley, California 94720, USA, United States of America

OD7 Novel Optical Devices I Zuiun 2 （瑞雲 2） 14:50-16:45

OD7-1 (Invited) 14:50 - 15:15High Q AlN microresonators from UV to mid-IRHong TangYale University, United States of America

OD7-2 (Oral) 15:15 - 15:30Fabrication of GaN Monolithic Doubly-Resonant Microcavity SHG Device on SiSubstrateTomoaki Nambu,1 Tenta Komatsu,1 Masahiro Uemukai,1 Keishi Shiomi,1 Yasufumi Fujiwara,1 Ryuji Katayama,1

Jumpei Tajima,2 Toshiki Hikosaka,2 and Shinya Nunoue2

1Graduate School of Engineering, Osaka University, Japan, 2 Corporate R&D Center, Toshiba Corporation, Japan

OD7-3 (Oral) 15:30 - 15:45Multi-gigabit-class deep ultraviolet wireless communication at 280 nm based on anAlGaN light-emitting diodeKazunobu Kojima,1 Yuki Yoshida,2 Masaki Shiraiwa,2 Yoshinari Awaji,2 Atsushi Kanno,2 Naokatsu Yamamoto,2

and Shigefusa F. Chichibu1

1IMRAM, Tohoku University, Japan, 2NICT, Japan

DRAFT


OD7-4 (Oral) 15:45 - 16:00RGB Light-emitting Diodes with Monolithically-Integrated Photodetectors for Sta-bilizing Color ChromaticityKwai Hei Li, Yuk Fai Cheung, Weijin Jin, Albert Ting Leung Lee, S.-C. TAN, S. Y. Ron Hui, and Hoi Wai ChoiDepartment of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong

OD7-5 (Oral) 16:00 - 16:15Optically pumped lasing from an InGaN/GaN microdisk on a bendable poly-dimethylsiloxane (PDMS) substrateKwai Hei Li, Yuk Fai Cheung, Chap Hang To, and Hoi Wai ChoiDepartment of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong

OD7-6 (Oral) 16:15 - 16:30Point light sources based on pinhole InGaN/GaN microLED arrays for lensless cellmonitoring systemsShinta Mariana,1 Gregor Scholz,1 Feng Yu,1 Agus Budi Dharmawan,1,2 Iqbal Syamsu,1,3 Joan Daniel Prades,4

Andreas Waag,1 and Hutomo Suryo Wasisto1

1Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Univer-sität Braunschweig, Germany, 2Faculty of Information Technology, Tarumanagara University, Indonesia, 3Research Centerfor Electronics and Telecommunication, Indonesian Institute of Sciences (LIPI), Indonesia, 4Department of Electronic andBiomedical Engineering, Universitat de Barcelona, Spain

OD7-7 (Oral) 16:30 - 16:45A plasmonic biosensor built with InGaN quantum wellsFan-Ching Chien,1 Jen-Long Lo,1 Xingwang Zhang,2 Ertugrul Cubukcu,2 Kai-Lin Huang,1 Yu-Tang Luo,1 XiaofangTang,1 Chien-Sheng Chen,1 Chii-Chang Chen,1 and Kun-Yu Lai11National Central University, Taiwan, 2University of California, San Diego, United States of America

TuP Poster Session 2 Koryu （交流）/ Dome （ドーム） 16:45-18:45

break 18:45 - 19:10

Rump1 Rump Session 1 Ohtori 1（鳳 1） 19:10-20:40

Rump2 Rump Session 2 Ohtori 2 （鳳 2） 19:10-20:40

Rump3 Rump Session 3 Ohtori 3 （鳳 3） 19:10-20:40

DRAFT

International Workshop on Nitride Semiconductors 2018 November 14 (Wed)

November 14 (Wed)

OD8 VCSEL Hogaku （邦楽） 08:00-09:25

OD8-1 (Invited) 08:00 - 08:25Sub-milliampere threshold operation of GaN-VCSEL with lateral optical confine-ment by monolithic curved mirrorTatsushi Hamaguchi, Hiroshi Nakajima, Masayuki Tanaka, Noriko Kobayashi, Tatsuya Matou, Masamichi Ito,Tatsurou Jyokawa, Kentaro Hayashi, Maho Ohara, Hideki Watanabe, Rintaro Koda, and Hironobu NaruiSony corporation, Japan

OD8-2 (Oral) 08:25 - 08:40A 1.8mW GaN-based VCSEL with an n-type conducting bottom DBRWataru Muranaga,1 Ryouta Fuwa,1 Takanobu Akagi,2 Sho Iwayama,1 Shotaro Yoshida,1 Yasuto Akatsuka,1 JunichiroOgimoto,1 Tetsuya Takeuchi,1 Satoshi Kamiyama,1 Motoaki Iwaya,1 and Isamu Akasaki1,3

1Faculty of Science and Technology Meijo University, Japan, 2R&D Laboratories, Stanley Electric Co.,LTD., Japan, 3AkasakiResearch Center, Japan

OD8-3 (Oral) 08:40 - 08:55Development of nanopore-based III-nitride VCSELsCheng Zhang,1 Jerry Zhang,1 Rami Elafandy,1 Songtao Chen,2 Arto V. Nurmikko,2 and Jung Han1

1Department of Electrical Engineering, Yale University, United States of America, 2Division of Engineering, Brown Univer-sity, United States of America

OD8-4 (Oral) 08:55 - 09:10Green VCSELs based on combination of blue-emitting quantum wells and cavity-enhanced recombinationRongbin Xu,1 Yang Mei,1 Huan Xu,1 Leiying Ying,1 Zhiwei Zheng,1 Hao Long,1 Jianping Liu,2 and Baoping Zhang1

1Department of Electronic Engineering, Laboratory of Micro-Nano Optoelectronics, Xiamen University, China, 2SuzhouInstitute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, China

OD8-5 (Oral) 09:10 - 09:25Progress in Nonpolar GaN-Based Vertical-Cavity Surface-Emitting LasersJared Kearns,1 Charles Forman,1 SeungGeun Lee,2 Daniel Cohen,1 Steven DenBaars,1,2 and Shuji Nakamura1,2

1Materials Department, University of California, Santa Barbara, United States of America, 2Department of Electrical andComputer Engineering, University of California, Santa Barbara, United States of America

DRAFT


J5 (GR/OD) Growth for OD I Ohtori 1（鳳 1） 08:00-09:30

J5-1 (Oral) 08:00 - 08:15(Al,Ga)N quantum dots for deep UV LEDsJulien Brault,1 Samuel Matta,1,2 Mohamed Al Khalfioui,1 Maxim Korytov,1 Thi-Huong Ngo,2 Mathieu Leroux,1

Benjamin Damilano,1 Sébastien Chenot,1 Philippe Vennéguès,1 Jean-Yves Duboz,1 Jean Massies,1 Catherine Chaix,3

Hervé Peyre,2 Sandrine Juillaguet,2 Sylvie Contreras,2 and Bernard Gil21Université Côte d’Azur, CNRS, CRHEA, France, 2CNRS-Université Montpellier 2, Laboratoire Charles Coulomb, Montpel-lier, France, 3RIBER SA, 31 Rue Casimir Périer, 95870 Bezons, France

J5-2 (Oral) 08:15 - 08:30Selective area growth of GaN nanocolumns with extremely low photoluminescencelinewidth of <0.6 meVAmalia Fernando-Saavedra,1 Steven Albert,1 Ana Bengoechea-Encabo,1 David Lopez-Romero,1 Michael Niehle,2

Achim Trampert,2 Miguel Angel Sánchez-García,1 and Enrique Calleja1

1ISOM - Department of Electronic Engineering, ETSIT, Universidad Politécnica de Madrid, Spain, 2Paul-Drude-Institut fürFestkörperforschung, Leibniz-Institut im Forschungsverbund, Germany

J5-3 (Oral) 08:30 - 08:45Self-limiting growth and optical properties of ultrathin GaN/AlN quantum wellsHirotsugu Kobayashi,1 Shuhei Ichikawa,2 Mitsuru Funato,1 and Yoichi Kawakami11Kyoto University, Japan, 2Osaka University, Japan

J5-4 (Oral) 08:45 - 09:00Cp2Mg in-situ monitoring in a MOVPE reactor using a quantum cascade laserYoko Sato,1 Daisuke Hayashi,1 Masakazu Minami,1 Noboru Muramatsu,2 and Motoaki Iwaya2

1HORIBA STEC, Co., Ltd., Japan, 2Department of Materials Science and Engineering, Meijo University, Japan

J5-5 (Oral) 09:00 - 09:15Consequences of high dislocation density in MOCVD grown p-GaNBiplab Sarkar,1,2 Andrew Klump,1 Seiji Mita,3 Felix Kaess,1 Yan Guan,1 Pramod Reddy,3 Ramon Collazo,1 and ZlatkoSitar1,3

1Department of Materials Science and Engineering, North Carolina State University, United States of America, 2Departmentof Electronics Engineering, IIT (ISM) Dhanbad, India, 3Adroit Materials, Cary, NC, United States of America

J5-6 (Oral) 09:15 - 09:30Study of AlN based materials grown on NPSS for UVC LED applicationsJason Hoo, Yao Chen, Vincent Wang, and Shiping GuoAdvanced Micro-Fabrication Equipment Inc., China

DRAFT


CR10 Defect Characterization III Ohtori 2 （鳳 2） 08:00-09:25

CR10-1 (Invited) 08:00 - 08:25Visualization and investigation of defects using electron channeling (electrondiffraction) in the scanning electron microscopeCarol Trager-Cowan,1 G. Naresh-Kumar,1 Jochen Bruckbauer,1 M. Nouf-Allehiani,1 Ben Hourahine,1 StefanoVespucci,1 Simon Kraeusel,1 Gunnar Kusch,1 Paul R. Edwards,1 Elena Pascal,1 Albes Kotzai,1 Daniel MacLure,1

Dale Waters,1 William Avis,1 Yinghong Liu,1 McDermott Ryan,1 Robert W. Martin,1 Peter J. Parbrook,2 ArantxaVilalta-Clemente,3 Angus J. Wilkinson,3 and Aimo Winkelmann4

1Department. of Physics, SUPA, University of Strathclyde, United Kingdom, 2Tyndall National Institute, University CollegeCork, Ireland, 3Department of Materials, University of Oxford, United Kingdom, 4Laser Components Department, LaserZentrum Hannover e.V., Germany

CR10-2 (Oral) 08:25 - 08:40Analysing extended defects in AlN and AlGaN quantum well structures grown onpatterned sapphire substratesGunnar Kusch,1 Elena Pascal,1 Pierre-Marie Coulon,2 Frank Mehnke,4 Pierre Chausse,2 Sebastian Walde,3 GunasekarNaresh-Kumar,1 Tim Wernicke,4 Sylvia Hagedorn,3 Michael Kneissl,3,4 Philip A. Shields,2 Carol Trager-Cowan,1 andRobert W. Martin1

1University of Strathclyde, United Kingdom, 2University of Bath, United Kingdom, 3Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany, 4Technische Universität Berlin, Germany

CR10-3 (Oral) 08:40 - 08:55Three Dimensional and Non-destructive Investigation of Relation between ReverseLeakage Current and Threading Dislocation in Vertical GaN Schottky Barrier DiodesTatsuya Fujita,1 Tomoyuki Tanikawa,1 Hayata Fukushima,2 Shigeyoshi Usami,2 Atsushi Tanaka,3 Tetsuya Suemitsu,4

and Takashi Matsuoka1

1Institute for Materials Research, Tohoku University, Japan, 2Dept. of EECS, Nagoya University, Japan, 3Institute ofMaterials and Systems for Sustainability, Nagoya University, Japan, 4Center for Innovative Integrated Electronic Systems,Tohoku University, Japan

CR10-4 (Oral) 08:55 - 09:10Determination of donor and DX center capture characteristics by pulsed photolumi-nescenceMatthias Lamprecht and Klaus ThonkeInst. of Quantum Matter / Semiconductor Physics Group, Ulm University, Germany

CR10-5 (Oral) 09:10 - 09:25Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from the Recom-bination Current in GaN p-n Junction DiodesTakuya Maeda,1 Tetsuo Narita,2 Hiroyuki Ueda,2 Masakazu Kanechika,2 Tsutomu Uesugi,2 Tetsu Kachi,3 TsunenobuKimoto,1 Masahiro Horita,1 and Jun Suda1,3

1Kyoto University, Japan, 2Toyota Central R&D Labs., Inc., Japan, 3Nagoya University, Japan

DRAFT


ED6 Current Transport in Electron Devices Ohtori 3 （鳳 3） 08:00-09:25

ED6-1 (Invited) 08:00 - 08:25Multiple drain-current-transient responses from the same trap: explanation usingfloating buffer modelManikant Singh,1 Mike J. Uren,1 Hareesh Chandrasekar,1 Serge Karboyan,1 Trevor Martin,2 and Martin Kuball11Centre for Device Thermography and Reliability, University of Bristol, United Kingdom, 2IQE Europe, St Mellons, Cardiff,United Kingdom

ED6-2 (Oral) 08:25 - 08:40Impurity band conduction along dislocations in vertical GaN-on-GaN pn diodesBen Rackauskas,1 Stefano Dalcanale,1 Michael J. Uren,1 Tetsu Kachi,2 and Martin Kuball11Centre for Device Thermography and Reliability, University of Bristol, United Kingdom, 2Institute of Materials and Systemsfor Sustainability, Nagoya University, Japan

ED6-3 (Oral) 08:40 - 08:55Temperature Dependence of Avalanche Multiplication in GaN PN Diodes Measuredby Light Absorption Due to Franz-Keldysh EffectTakuya Maeda,1 Tetsuo Narita,2 Hiroyuki Ueda,2 Masakazu Kanechika,2 Tsutomu Uesugi,2 Tetsu Kachi,3 TsunenobuKimoto,1 Masahiro Horita,1 and Jun Suda1,3


ED6-4 (Oral) 08:55 - 09:10Experimental investigation and analytical modeling of dislocation-mediated verticalleakage in AlGaN/GaN HEMTs on SiliconNayana Remesh,1 Sandeep Kumar,1 Shreesha Prabhu,1 Ivor Guiney,2 C. J. Humphreys,2 Srinivasan Raghavan,1 R.Muralidharan,1 and Digbijoy N. Nath1

1Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science (IISc), India, 2Cambridge Centre for GalliumNitride, Department of Materials Science and Metallurgy, United Kingdom

ED6-5 (Oral) 09:10 - 09:25Concept to suppress the vertical leakage current in GaN-on-Si HEMT transistorsGiorgia Longobardi,1 Shu Yang,1,3 Dario Pagnano,1 Florin Udrea,1 Jinming Sun,2 Renu Garg,2 Mohammed Imam,2

and Alain Charles2

1Department of Electrical Engineering, University of Cambridge, United Kingdom, 2Infineon Technologies Americas Corp,United States of America, 3College of Electrical Engineering, Zhejiang University, China

DRAFT


GR6 MBE Zuiun 1 （瑞雲 1） 08:00-09:30

GR6-1 (Oral) 08:00 - 08:15Influence of local substrate temperature on Mn incorporation and magnetic proper-ties of MBE-grown GaN:MnKatarzyna Gas,1,2 Jaroslaw Z. Domagala,1 Piotr Dluzewski,1 Edyta Piskorska-Hommel,3,4 Wojciech Paszkowicz,1

Dariusz Sztenkiel,1 Maciej J. Winiarski,4 Rafal Jakiela,1 Gerd Kunert,3 Rafal Szukiewicz,2,3 Tomasz Baraniecki,3

Andrzej Miszczuk,3 Dorota Kowalska,4 Detlef Hommel,2,3,4 and Maciej Sawicki11Institute of Physics, Polish Academy of Sciences, Warsaw, Poland, 2Institute of Experimental Physics, University of Wroclaw,Wroclaw, Poland, 3Polski Osrodek Rozwoju Technologii, Wroclaw, Poland, 4Institute of Low Temperature and StructureResearch, PAS, Wroclaw, Poland

GR6-2 (Oral) 08:15 - 08:30RF-MBE growth of regularly arranged Europium doped GaN nanocolumns onAlN/Si template for single photon emitterAtsushi Sukegawa,1 Hiroto Sekiguchi,1 Yoshikazu Tamai,1 Shinjiro Fujiwara,1 Keisuke Yamane,1 Hiroshi Okada,1

Katsumi Kishino,2 and Akihiro Wakahara1

1Toyohashi University of Technology, Japan, 2Sophia University, Japan

GR6-3 (Oral) 08:30 - 08:45Sequential directional deposition of III-nitride shells on lateral side facets of GaNnanowires by molecular beam epitaxyDavid van Treeck,1 Jonas Lähnemann,1 Oliver Brandt,1 Sergio Fernández-Garrido,1,2 and Lutz Geelhaar1

1Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany, 2Departamento de Física Aplicada, Universidad Autónomade Madrid, Spain

GR6-4 (Oral) 08:45 - 09:00The role of Ga surface diffusion in the elongation mechanism of catalyst-free GaNnanowires grown by molecular beam epitaxyMarion Gruart,1,2 Gwénolé Jacopin,3 and Bruno Daudin1,2

1Université Grenoble Alpes, France, 2CEA, INAC-PHELIQS "Nanophysics and semiconductors" group, France, 3InstitutNéel, Université Grenoble Alpes, CNRS, Grenoble INP, France

GR6-5 (Oral) 09:00 - 09:15Polarity engineering of self-nucleated GaN nanowires: How to switch it from N-polar to metal-polar?Alexandre Concordel,1,2 Bruno Gayral,1,2 Jean-Luc Rouviere,1,3 Gwénolé Jacopin,4 and Bruno Daudin1,2

1Université Grenoble Alpes, France, 2CEA, INAC-PHELIQS "Nanophysics and semiconductors" group, France, 3CEA,INAC-MEM, LEMMA, France, 4Institut Néel, Université Grenoble Alpes, CNRS, Grenoble INP, 38000 Grenoble, France

GR6-6 (Oral) 09:15 - 09:30Visible Light Driven Sustainable Solar Hydrogen Generation using Efficient, Stableand Industry-friendly III-Nitride Nanowire DeviceMohammad Faqrul A. Chowdhury1 and Zetian Mi1,2

1Department of Electrical and Computer Engineering, McGill University, Canada, 2Department of Electrical Engineeringand Computer Science, University of Michigan, United States of America

DRAFT


ED7 Sensors Zuiun 2 （瑞雲 2） 08:00-09:30

ED7-1 (Oral) 08:00 - 08:15III-nitride-based SAW dual delay-line platforms for biochemical sensorsTony Granz,1 Iqbal Syamsu,1,2 Nursidik Yulianto,1,3 Lars Daul,2,4 Prabowo Puranto,3,4 Zhi Li,4 ChristophMargenfeld,1 Irene Manglano Clavero,1 Ludger Koenders,4 Uwe Brand,4 Erwin Peiner,1 Andreas Waag,1 andHutomo Suryo Wasisto1

1Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Univer-sität Braunschweig, Germany, 2Research Center for Electronics and Telecommunication, Indonesian Institute of Sciences(LIPI), Indonesia, 3Research Center for Physics, Indonesian Institute of Sciences (LIPI), Indonesia, 4Physikalisch-TechnischeBundesanstalt (PTB), Germany

ED7-2 (Oral) 08:15 - 08:30Effect of Geometry on Sensitivity of AlGaN/GaN Hall Effect SensorsHannah S. Alpert,1 Karen M. Dowling,2 Andrea Ramirez,2 Ananth Saran Yalamarthy,3 Helmut Köck,4 UdoAusserlechner,4 and Debbie G. Senesky1

1Department of Aeronautics and Astronautics, Stanford University, United States of America, 2Department of ElectricalEngineering, Stanford University, United States of America, 3Department of Mechanical Engineering, Stanford University,United States of America, 4Infineon Technologies Austria AG, Austria

ED7-3 (Oral) 08:30 - 08:45Nitrate ion detection using GaN/AlGaN/GaN-based reference-electrode-free sen-sors with tripodal receptor functionalizationFarhad Foroozandeh,1 Jianan Wang,1,2 Radha Krishnan Nachimuthu,1 Zhaokun Han,3 Darren Johnson,4 SeanFontenot,4 Brett Nener,1 Giacinta Parish,1 and Matthew Myers2,5

1Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, Australia, 2Schoolof Molecular Sciences, The University of Western Australia, Australia, 3Department of Physics, University of Science andTechnology of China, China, 4Department of Chemistry and Biochemistry, University of Oregon, United States of America,5CSIRO Earth Science and Resource Engineering, Australia

ED7-4 (Oral) 08:45 - 09:00Chromate ion sensors based on AlGaN/GaN transistors and the ionophore[Co(salen)]2Junfei Zhang,1 Matthew Myers,2,3 Gilberto A. Umana-Membreno,1 Giacinta Parish,1 Murray Baker,2 and BrettNener1

1School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Australia, 2School ofChemistry and Biochemistry, The University of Western Australia, Australia, 3CSIRO Energy Flagship, Australia

ED7-5 (Oral) 09:00 - 09:15CA 19-9 Tumor Marker Detection Using AlGaN/GaN High Electron Mobility Tran-sistorsChing-Wen Chang,1 Paritosh V. Wadekar,1 Jia-Wei Zhang,1 Cha-Her Lin,1 Hsuan-Yu Chen,1 Ching-Feng Cheng,1

Cheng-Lin Xu,1 Xin-Ren Yu,1 Yu-Hung Lee,1 Chia-Chang Tsai,1 Srinivasu Puttaswamy,1 Kung-Kai Kuo,2 Ying SunSun,3 and Li-Wei Tu1,4

1Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan,2Department of Surgery, Kaohsiung Medical University Hospital, Taiwan, 3Dept. of Electrical, Computer & BiomedicalEngineering, University of Rhode Island, United States of America, 4Department of Medical Laboratory Science and Biotech-nology, Kaohsiung Medical University, Taiwan

DRAFT


ED7-6 (Oral) 09:15 - 09:30Multi-functional Polar and Non-Polar GaN based Smart SensorsAbhiram Gundimeda,1,2 Ajit Dash,1,3 Shubhendra Jain,1,2 Shibin Krishna,1,2 Neha Aggarwal,1,2 and Govind Gupta1,2

1Advanced Materials and Devices Division, CSIR-National Physical Laboratory, India, 2Academy of Scientific and InnovativeResearch, CSIR- National Physical Laboratory, India, 3Department of Electronics and Communication, National Institute ofScience and Technology, India

break 09:30 - 10:00

OD9 InGaN LD Hogaku （邦楽） 10:00-11:25

OD9-1 (Invited) 10:00 - 10:25Latest Developments, Challenges and Application Examples of Novel LED andLaser TechnologiesTetsuya Taki, Isabel Otto, Dominik Scholz, Sebastian Wittmann, Marc Hoffmann, Hans Luagauer, Harald Koenig,Matthis Peter, Marcus Boehm, and Martin StrassburgOSRAM Opto Semiconductors GmbH, Germany

OD9-2 (Oral) 10:25 - 10:40Electrically Injected 389 nm Laser Diode Grown on Si(111) by MOCVDMeixin Feng, Zengcheng Li, Jin Wang, Rui Zhou, Qian Sun, Yu Zhou, Jianxun Liu, Hongwei Gao, Yingnan Huang,and Hui YangKey Laboratory of Nano-devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy ofSciences, China

OD9-3 (Oral) 10:40 - 10:55Blue edge-emitting laser diodes with AlInN/AlGaN multiple cladding layersKei Arakawa,1 Kohei Miyoshi,1 Tetsuya Takeuchi,1 Makoto Miyoshi,2 Satoshi Kamiyama,1 Motoaki Iwaya,1 andIsamu Akasaki1,3

1Fac.Sci.&Eng., Meijo University, Nagoya, Aichi, 468-8502 Japan, Japan, 2Research Center for Nano Devices and Ad-vanced Materials, Nagoya Institute of Technology, Nagoya, Aichi, 466-8555 Japan, Japan, 3Akasaki Research Center, NagoyaUniversity, Nagoya, Aichi, 464-8603 Japan, Japan

OD9-4 (Oral) 10:55 - 11:10Development of Green Superluminescent Light Emitting DiodesMarco Malinverni, Marco Rossetti, Antonino Castiglia, Christian Mounir, Adin Ferhatovic, Marcus Duelk, andChristian VelezEXALOS AG, Switzerland

OD9-5 (Oral) 11:10 - 11:25Does dislocation density affect light emission from InGaN laser diodes?Agata Bojarska,1 Julita Smalc-Koziorowska,1 Lucja Marona,1,2 Dario Schiavon,1,2 Szymon Grzanka,1 Piotr Perlin,1,2

and Tadek Suski11Institute of High Pressure Physics, Poland, 2TopGaN Limited, Poland

DRAFT


GR7 AlN I Ohtori 1（鳳 1） 10:00-11:30

GR7-1 (Oral) 10:00 - 10:15Impact of intermediate high temperature annealing on the properties of MOVPEgrown AlN/sapphire templatesSebastian Walde,1 Sylvia Hagedorn,1 Arne Knauer,1 Tim Kolbe,1 Norman Susilo,2 Tim Wernicke,2 Michael Kneissl,2

and Markus Weyers1

1Ferdinand-Braun-Institut, Germany, 2Technische Universität Berlin, Germany

GR7-2 (Oral) 10:15 - 10:30

High-temperature thermal annealing of nonpolar (1010) m-plane AlN MOVPE-grown on m-plane sapphireDuc V. Dinh,1 Hiroshi Amano,1,2 and Markus Pristovsek1

1Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan, 2Akasaki Research Center,Nagoya University, Nagoya 464-8603, Japan

GR7-3 (Oral) 10:30 - 10:45Nitride Growth by using Ultra-thin AlN/ Epitaxial Graphene Intermediate Layer on4H-SiC(0001)Yuta Sato, Daiki Ishimaru, Taiji Terai, Yuta Kamada, Tomoya Takeuchi, and Akihiro HashimotoGraduate School of Electrical & Electronics Engineering, University of Fukui, Japan

GR7-4 (Oral) 10:45 - 11:00Crystalline quality improvement and suppression of cracking for sputter-depositedhigh-temperature annealed AlN films by stress controlKenjiro Uesugi,1 Yusuke Hayashi,2 Kanako Shojiki,3 Kentaro Nagamatsu,1 Harumasa Yoshida,1 and HidetoMiyake2,3

1Organization for the Promotion of Regional Innovation, Mie University, Japan, 2Graduate School of Regional InnovationStudies, Mie University, Japan, 3Graduate School of Engineering, Mie University, Japan

GR7-5 (Oral) 11:00 - 11:15Polarity Inversion of AlN by Sputtering Condition Control for DUV-SHG DevicesYusuke Hayashi,1 Kenjiro Uesugi,2 Kanako Shojiki,3 and Hideto Miyake1,3

1Mie University, Grad. School of RIS, Japan, 2Mie University, OPRI, Japan, 3Mie University, Grad. School of Eng., Japan

GR7-6 (Oral) 11:15 - 11:30GaN and AlN grown by reactive pulsed sputteringFlorian Hörich, Christopher Kahrmann, Jürgen Bläsing, Armin Dadgar, and André StrittmatterDepartsment of Physics, Otto-von-Guericke University, Germany

DRAFT


CR11 Electrical Properties I Ohtori 2 （鳳 2） 10:00-11:30

CR11-1 (Oral) 10:00 - 10:15DLTS studies of quartz-free-HVPE-grown homoepitaxial n-type GaNKazutaka Kanegae,1 Hajime Fujikura,2 Yohei Otoki,2 Taichiro Konno,2 Takehiro Yoshida,2 Masahiro Horita,1

Tsunenobu Kimoto,1 and Jun Suda1,3

1Kyoto University, Japan, 2SCIOCS, Japan, 3Nagoya University, Japan

CR11-2 (Oral) 10:15 - 10:30Deep levels introduced by electron beam irradiation in the energy range from 100keV to 2 MeV in MOVPE-grown homoepitaxial n-type GaNMasahiro Horita,1 Tetsuo Narita,2 Tetsu Kachi,3 Tsutomu Uesugi,2 and Jun Suda1,3


CR11-3 (Oral) 10:30 - 10:45Control of Al2O3 MOS Interfaces Fabricated on m-plane GaN SurfacesShota Kaneki and Tamotsu HashizumeRCIQE of Hokkaido University, Japan

CR11-4 (Oral) 10:45 - 11:00Polarization fields in c-plane GaN/ AlxGa1-xN/GaN quantum wells determined bycapacitance-voltage-measurementsNorman Susilo,1 Marcel Schilling,1 Michael Narodovitch,2 Bernd Witzigmann,3 Martin Guttmann,1 Tore Niermann,2

Tim Wernicke,1 Michael Lehmann,2 and Michael Kneissl1,4

1Institute of Solid State Physics, Technische Universität Berlin, Germany, 2Institute of Optics and Atomic Physics, TechnischeUniversität Berlin, Germany, 3University of Kassel, Computational Electronics and Photonics Group and CINSaT, Germany,4Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany

CR11-5 (Oral) 11:00 - 11:15General Absence of Electron Accumulation at Stoichiometric Non-Polar InN sur-facesHolger Eisele,1 Andrea Lenz,1 Michael Schnedler,2 Verena Portz,2 and Philipp Ebert2

1Technische Universität Berlin, Germany, 2Forschungszentrum Jülich, Germany

CR11-6 (Oral) 11:15 - 11:30Polarity Control of Heteroepitaxial GaN NanowiresTheresa Hoffmann, Martin Hetzl, Max Kraut, and Martin StutzmannWalter Schottky Institut and Physics Department, Technical University of Munich, Germany

ED8 Integrated Circuits Ohtori 3 （鳳 3） 10:00-11:40

ED8-1 (Invited) 10:00 - 10:25GaN Power Integrated CircuitsKevin J. Chen and Gaofei TangHong Kong University of Science and Technology, Hong Kong

DRAFT


ED8-2 (Oral) 10:25 - 10:401kV AlGaN/GaN MOSHEMTs with Integrated Tri-anode Freewheeling diodeTaifang Wang, Jun Ma, and Elison MatioliEcole polytechnique federale de Lausanne (EPFL), Switzerland

ED8-3 (Oral) 10:40 - 10:55Monolithic integration of half-bridge on GaN-on-SOIXiangdong Li,1,2 Ming Zhao,1 Karen Geens,1 Weiming Guo,1 Shuzhen You,1 Steve Stoffels,1 Guido Groeseneken,1

and Stefaan Decoutere1,2

1imec, Belgium, 2Department of Electrical Engineering, KU Leuven, Belgium

ED8-4 (Oral) 10:55 - 11:10GaN HEMTs with ITO electrodes: towards realization of transparent GaN circuitsZhihong LiuSingapore-MIT Alliance for Research and Technology, Singapore

ED8-5 (Oral) 11:10 - 11:25Performance Prediction of Scaled p-channel GaN MOSFET on Polarization JunctionPlatformTakuya Hoshii,1 Shuma Tsuruta,1 Akira Nakajima,2 Shin-ichi Nishizawa,3 Hiromichi Ohashi,1 KuniyukiKakushima,1 Hitoshi Wakabayashi,1 and Kazuo Tsutsui11Tokyo Institute of Technology, Japan, 2AIST, Japan, 3Kyushu University, Japan

ED8-6 (Oral) 11:25 - 11:40GaN Bipolar Junction Transistor for Monolithic IntegrationWai Yuen Fu and Hoi Wai ChoiDepartment of Electrical and Electronic Engineering, the University of Hong Kong, Hong Kong

GR8 Epitaxial Growth I Zuiun 1 （瑞雲 1） 10:00-11:30

GR8-1 (Oral) 10:00 - 10:15Structural analysis of epitaxially grown GaN surfaceTakuo Sasaki,1 Takuya Iwata,2 and Masamitu Takahasi1,2

1National Institutes for Quantum and Radiological Science and Technology, Japan, 2University of Hyogo, Japan

GR8-2 (Oral) 10:15 - 10:30Novel in-situ technique for dislocation-reduction during GaN growth using multi-layered GaN:Eu structureShuhei Ichikawa,1 Wanxin Zhu,1 Brandon Mitchell,1,2 Takaya Morikawa,1 Jun Tatebayashi,1 Tom Gregorkiewicz,1,3

and Yasufumi Fujiwara1

1Osaka University, Japan, 2West Chester University, United States of America, 3University of Amsterdam, Netherlands

DRAFT


GR8-3 (Oral) 10:30 - 10:45Drastic surface-smoothing on vicinal (0001) GaN film via strong surfactant effect ofdoped-EuShuhei Ichikawa, Takaya Morikawa, Jun Tatebayashi, and Yasufumi FujiwaraOsaka Univ., Japan

GR8-4 (Oral) 10:45 - 11:00High quality GaN epitaxy on Si (111) substrates by carbon nanotube assistednanoheteroepitaxyKun Wang,1 Mengda Li,2 and Tongjun Yu3

1State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, China,2State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, China,3State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, China

GR8-5 (Oral) 11:00 - 11:15Study of double polarity GaN MOVPE with narrow pitch pattern by V/III ratiocontrolKai Matsuhisa, Hirotaka Yagi, Yoku Inoue, and Takayuki NakanoDepartment of electronics and materials science, Shizuoka University, Japan

GR8-6 (Oral) 11:15 - 11:30Growth of Continuous 8µµµm-thick GaN Layers on Si Substrates: Effect of DislocationFiltering Layer on Strain RelaxationJie Zhang, Xuelin Yang, Yuxia Feng, Jianfei Shen, and Bo ShenState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China

ED9 Thermal Issues Zuiun 2 （瑞雲 2） 10:00-11:00

ED9-1 (Oral) 10:00 - 10:15Local heat spreaders for quasi-vertical GaN power devicesReza Soleimanzadeh, Riyaz Abdul Khadar, and Elison MatioliEcole Polytechnique Federale de Lausanne, Switzerland

ED9-2 (Oral) 10:15 - 10:30Electrical and Thermal Analysis of Vertical GaN-on-GaN PN DiodesLuke Yates,1 Shigeyoshi Usami,2 Kentaro Nagamatsu,2 Georges Pavlidis,1 Yoshio Honda,2 Hiroshi Amano,2 andSamuel Graham1

1GW Woodruff School of Mechanical Engineering, Georgia Institute of Technology, United States of America, 2Institute ofMaterials and Systems for Sustainability, Nagoya University, Japan

ED9-3 (Oral) 10:30 - 10:45Near-junction liquid cooling of GaN power devices with integrated 3D microchan-nel manifoldRemco van Erp, Reza Soleiman, and Elison MatioliEcole Polytechnique Federale de Lausanne (EPFL), Switzerland

DRAFT


ED9-4 (Oral) 10:45 - 11:00Thermal Analysis of GaN-on-Diamond SubstratesKoji Yoshitsugu, Takashi Matsuda, Keisuke Nakamura, Eiji Yagyu, and Mikio YamamukaAdvanced Technology R&D Center, Mitsubishi Electric Corporation, Japan

Excursion -

DRAFT

International Workshop on Nitride Semiconductors 2018 November 15 (Thu)

November 15 (Thu)

CR12 AlGaN-based Materials Hogaku （邦楽） 08:30-10:25

CR12-1 (Invited) 08:30 - 08:55Development of a deep-ultraviolet scanning nearfield optical microscope for nano-spectroscopic characterizations of AlxGa1-xN (x: 0∼1) active layersRyota Ishii, Mitsuru Funato, and Yoichi KawakamiDepartment of Electronic Science and Engineering, Kyoto University, Japan

CR12-2 (Oral) 08:55 - 09:10Investigation of the optical polarization of AlGaN multiple quantum wells usingphotoluminescence spectroscopyBettina Belde,1 Frank Mehnke,1 Martin Guttmann,1 Christoph Reich,1 Tim Wernicke,1 and Michael Kneissl1,2

1Institute of Solid State Physics, Technische Universität Berlin, Germany, 2Ferdinand Braun Institut Berlin, Germany

CR12-3 (Oral) 09:10 - 09:25Surface Fermi level switching in GaN/AlGaN/GaN heterostructures induced byPAMBE growth interruptionsLukasz Janicki,1 Marta Sobanska,2 Kamil Klosek,2 Zbigniew R. Zytkiewicz,2 and Robert Kudrawiec1

1Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Poland, 2Institute of Physics,Polish Academy of Science, Poland

CR12-4 (Oral) 09:25 - 09:40Nonradiative Recombination Centers in AlGaN Deep UV-LEDs Detected by Below-Gap Excitation LightM. Ismail Hossain,1,2 Yuri Itokazu,1,3 Shunsuke Kuwaba,1,3 Norihiko Kamata,1 Noritoshi Maeda,3 and HidekiHirayama3

1Graduate School of Science and Engineering, Saitama University, Japan, 2Department of Physics, University of Rajshahi,Bangladesh, 3Quantum Optodevice Lab., RIKEN, Japan

CR12-5 (Oral) 09:40 - 09:55Nanoscale structural and optical properties of deep UV-emitting GaN/AlN MQW-stackBowen Sheng,1,2 Yixin Wang,1 Xin Rong,1 Zhaoying Chen,1 Tao Wang,1 Ping Wang,1 Gordon Schmidt,2 FrankBertram,2 Peter Veit,2 Hideto Miyake,3 Hongwei Li,4 Shiping Guo,4 Zhixin Qin,1 Jürgen Christen,2 Bo Shen,1 andXinqiang Wang1

1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China,2Institute of Physics, Otto-von-Guericke-University Magdeburg, Germany, 3Department of Electrical and Electronic Engi-neering, Mie University, Japan, 4Advanced Micro-Fabrication Equipment Inc., China

DRAFT


CR12-6 (Oral) 09:55 - 10:10Dynamics of radiative recombination in semi-polar Al-rich AlGaN multi-quantumwells for surface emitting deep-UV sourcesChelsea Haughn,1 Greg Rupper,1 Thomas Wunderer,2 Zhihong Yang,2 Noble Johnson,2 Michael Wraback,1 andGregory Garrett1

1U.S. Army Research Laboratory, United States of America, 2Palo Alto Research Center, United States of America

CR12-7 (Oral) 10:10 - 10:25Correlation of composition and luminescence in AlGaN epilayersLucia Spasevski,1 Yuewei Zhang,2 Paul R. Edwards,1 Seongmo Hwang,3 Asif Khan,3 Siddharth Rajan,2 and RobertW. Martin1

1Department of Physics, SUPA, University of Strathclyde, United Kingdom, 2Electrical and Computer Engineering, The OhioState University, Columbus , United States of America, 3Electrical Engineering, University of South Carolina, Columbia,United States of America

GR9 HVPE Ohtori 1（鳳 1） 08:30-10:25

GR9-1 (Invited) 08:30 - 08:55Combination of advantages of HVPE and ammonothermal methods as a solutionfor crystallization of GaNMichal Stanislaw Bockowski1Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2Center for Integrated Research of Future Electronics,Institute of Materials and Systems for Sustainability, Nagoya University, Japan

GR9-2 (Oral) 08:55 - 09:10Homoepitaxial Growth by Hydride Vapor Phase Epitaxy of Semi-Polar GaN onAmmonothermal SeedsMikolaj Amilusik,1 Tomasz Sochacki,1 Michal Fijalkowski,1 Boleslaw Lucznik,1 Malgorzata Iwinska,1 Aneta Sidor,1

Henryk Teisseyre,2 Izabella Grzegory,1 and Michal Bockowski1,3

1Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2Insititute of Physics Polish Academy of Sciences,Poland, 3Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, NagoyaUniversity, Japan

GR9-3 (Oral) 09:10 - 09:25Fabrication of high quality GaN substrate by eliminating N-polarity in GaN withGa, N double polaritis by HVPETatsuya Ezaki, Yusuke Shigefuji, Narihito Okada, and Kazuyuki TadatomoGraduate School of Science and Technology for Innovation, Yamaguchi University, Japan

GR9-4 (Oral) 09:25 - 09:40Growth of GaN:Mg by Hydride Vapor Phase EpitaxyMikolaj Amilusik,1 Tomasz Sochacki,1 Michal Fijalkowski,1 Boleslaw Lucznik,1 Malgorzata Iwinska,1 Aneta Sidor,1

Izabella Grzegory,1 and Michal Bockowski1,2

1Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2Center for Integrated Research of Future Electronics,Institute of Materials and Systems for Sustainability, Nagoya University, Japan

DRAFT


GR9-5 (Oral) 09:40 - 09:55Effect of off-angle of stripe direction on facet stability and embedment in HVPEselective area growthFijun Kim, Hiroki Ikeuchi, Kohei Nojima, Narihito Okada, and Kazuyuki TadatomoGrad. School of Sci. & Tech. for Innovation, Yamaguchi Univ., Japan

GR9-6 (Oral) 09:55 - 10:10Growth of thick AlGaN layers by HVPE method on GaN seedsMichal Fijalkowski,1 Tomasz Sochacki,1 Boleslaw Lucznik,1 Mikolaj Amilusik,1 Slawomir Sakowski,1 Aneta Sidor,1

Malgorzata Iwinska,1 Izabella Grzegory,1 and Michal Bockowski1,2

1Institute of High Pressure Physics PAS, Poland, 2Center for Integrated Research of Future Electronics, Institute of Materialsand Systems for Sustainability, Nagoya University, Japan

GR9-7 (Oral) 10:10 - 10:25Reuse of ScAlMgO4 Substrates Utilized for Halide Vapor Phase Epitaxy of GaNKazuki Ohnishi,1 Shigeyuki Kuboya,1 Tomoyuki Tanikawa,1 Tsuguo Fukuda,2 and Takashi Matsuoka1

1Institute for Materials Research, Tohoku University, Japan, 2Fukuda Crystal Laboratory, Japan

OD10 Advanced Photonics Ohtori 2 （鳳 2） 08:30-10:20

OD10-1 (Invited) 08:30 - 08:55Progress in quantum dots for lasers and single photon sourcesYasuhiko Arakawa,1 Munetaka Arita,1 Mark Holmes,1,2 and Renchun Tao1

1Institute for Nano Quantum Information Electronics, The University of Tokyo, Japan, 2Institute of Industrial Science, TheUniversity of Tokyo, Japan

OD10-2 (Invited) 08:55 - 09:20Photonic Crystal Lasers and Their Extension to Nitride Semiconductor SystemsSusumu NodaKyoto University, Japan

OD10-3 (Oral) 09:20 - 09:35Increasing light-extraction efficiency of AlGaN UVC LED with remained low voltageby using PhC reflector on p-GaN contact layerHideki Hirayama,1 Yukio Kashima,1,2 Yasuhiro Watanabe,3 Tomohiko Shibata,3 Noritoshi Maeda,1 Masafumi Jo,1

Eriko Matsuura,1,2 Takeshi Iwai,4 Mitsunori Kokubo,4 Takaharu Tashiro,5 Hiroharu Furuta,6 Ryuichiro Kamimura,6

Yamato Osada,6 Hideki Takagi,7 Yuuichi Kuwashima,7 Yasushi Iwaisako,8 and Tsugumu Nagano9

1RIKEN, Japan, 2Marubun Corporation, Japan, 3DOWA Electronics, Japan, 4Tokyo Ohka Kogyo, Japan, 5Toshiba Machine,Japan, 6ULVAC, Japan, 7AIST, Japan, 8Nippon Tungsten, Japan, 9Dai Nippon Printing, Japan

OD10-4 (Oral) 09:35 - 09:50Design and Selective Area Epitaxy of AlGaN Nanowire Photonic Crystal UV LEDsand LasersXianhe Liu,1,2 Binh H. Le,2 Kishwar Mashooq,1 and Zetian Mi11Department of Electrical Engineering and Computer Science, University of Michigan, United States of America, 2Departmentof Electrical and Computer Engineering, McGill University, Canada

DRAFT


OD10-5 (Oral) 09:50 - 10:05III-Nitride on silicon microlaser photonic circuits and electrical injectionFarsane Tabataba-Vakili,1,2 Laetitia Doyennette,3 Christelle Brimont,3 Thierry Guillet,3 Stéphanie Rennesson,4 EricFrayssinet,4 Julien Brault,4 Benjamin Damilano,4 Jean-Yves Duboz,4 Fabrice Semond,4 Iannis Roland,1 Moustafa ElKurdi,1 Xavier Checoury,1 Sébastien Sauvage,1 Bruno Gayral,2 and Philippe Boucaud1,4

1C2N, CNRS, Univ. Paris-Sud, Université Paris-Saclay, France, 2CEA, INAC-PHELIQS, Univ. Grenoble Alpes, France,3L2C, Université de Montpellier, France, 4Université Côte d’Azur, CRHEA-CNRS, France

OD10-6 (Oral) 10:05 - 10:20Polariton Lasing in InGaN/GaN Multi Quantum Wells at Room TemperatureJinzhao Wu,1 Xiaoling Shi,1 Song Luo,2 Qingxuan Li,1 Zhanghai Chen,2 Zhechuan Feng,3 Leiying Ying,1 ZhiweiZheng,1 Hao Long,1 and Baoping Zhang1

1Department of Electronic Engineering, Xiamen University, China, 2Surface Physics Laboratory, Department of Physics,Fudan University, China, 3School of Physical Science and Technology, Guangxi University, China

ED10 Nanowire Devices Ohtori 3 （鳳 3） 08:30-10:25

ED10-1 (Invited) 08:30 - 08:55GaN Nanowire FETs for Low-Power ApplicationsPatrick Fay,1 Hansheng Ye,1 Wenjun Li,1,2 Matt Brubaker,3 and Kris Bertness3

1Dept. of Electrical Engineering, University of Notre Dame, United States of America, 2GlobalFoundries, United States ofAmerica, 3National Institute of Standards and Technology, United States of America

ED10-2 (Oral) 08:55 - 09:10Characterization and Analysis of GaN Vertical Nanowire MOSFETDong-Hyeok Son, Quan Dai, Jun-Hyeok Lee, Ki-Sik Im, and Jung-Hee LeeSchool of Electronics Engineering, Kyungpook NAtional University, Republic of Korea

ED10-3 (Oral) 09:10 - 09:25Vertical field-effect transistors based on 3D GaN nanofin arraysKlaas Strempel,1 Feng Yu,1 Jana Hartmann,1 Hendrik Spende,1 Kristian Frank,2 Friedhard Römer,2 BerndWitzigmann,2 Andrey Bakin,1 Hergo-Heinrich Wehmann,1 Hutomo Suryo Wasisto,1 and Andreas Waag1

1Institute of Semiconductor Technology (IHT) and Laboratory of Emerging Nanometrology (LENA), Technische UniversitätBraunschweig, Germany, 2Computational Electronics and Photonics (CEP), University of Kassel, Germany

ED10-4 (Oral) 09:25 - 09:40GaN-on-GaN Vertical Nanowire Schottky Barrier Diode Fabricated by Top-downApproachYaqiang Liao,1 Yuto Ando,1 Kevin Jing Chen,2 Jun Hirotani,1 Qiang Liu,1 Xu Yang,1 Yoann Robin,3 Shugo Nitta,3

Yoshio Honda,3 and Hiroshi Amano3,4,5

1Department of Electronics, Nagoya University, Japan, 2Department of Electronic and Computer Engineering, Hong KongUniversity of Science and Technology, China, 3Institute of Materials and System for Sustainability, Nagoya University, Japan,4Aakasaki Research Center, Nagoya University, Japan, 5Venture Business Laboratory, Nagoya University, Japan

DRAFT


ED10-5 (Oral) 09:40 - 09:553D GaN nanowire arrays for E-mode vertical field-effect transistorsMuhammad Fahlesa Fatahilah,1 Feng Yu,1 Klaas Strempel,1 Kristian Frank,2 Friedhard Römer,2 Andrey Bakin,1

Bernd Witzigmann,2 Hutomo Suryo Wasisto,1 and Andreas Waag1

1Institute of Semiconductor Technology (IHT) and Laboratory of Emerging Nanometrology (LENA), Technische UniversitätBraunschweig, Germany, 2Computational Electronics and Photonics (CEP), University of Kassel, Germany

ED10-6 (Oral) 09:55 - 10:10Fringe Field Controlled AlGaN/GaN Nanowire Field Effect TransistorsAkhil Kumar Shaji, Swaroop Ganguly, and Dipankar SahaIndian Institute of Technology Bombay, India

ED10-7 (Oral) 10:10 - 10:25Zero-bias rectifiers based on AlGaN/GaN nanowires for RF detectionGiovanni Santoruvo and Elison MatioliEcole Polytechnique Federale de Lausanne (EPFL), Switzerland

GR10 Epitaxial Growth II Zuiun 1 （瑞雲 1） 08:30-10:30

GR10-1 (Oral) 08:30 - 08:45Epitaxy of Single Crystalline GaN Film on Si (100) Substrate using Graphene BufferLayerYuxia Feng, Zhihong Zhang, Xuelin Yang, Jie Zhang, Kaihui Liu, Panfeng Ji, and Bo ShenState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China

GR10-2 (Oral) 08:45 - 09:00Flexible Single-Crystal III-N Thin-Film Heterostructure on Metal Tape by DirectDepositionShahab Shervin,1 Kamrul Alam,1 Kaveh Shervin,1 Jie Chen,1 Weijie Wang,1 Sara Pouladi,1 Seung Kyu Oh,1 Mi HeeJi,2 Theeradetch Detchprohm,2 Rebecca Forrest,1 Jiming Bao,1 Russell D. Dupuis,2 and Jae-Hyun Ryou1

1University of Houston, United States of America, 2Georgia Institute of Technology, United States of America

GR10-3 (Oral) 09:00 - 09:15Pinning of V-pits at the Interface Between High and Low-Temperature GalliumNitride Growth for Different Growth RegimesRomain Bouveyron, Mrad Mrad, and Matthew CharlesUniv. Grenoble Alpes, CEA, LETI, France

DRAFT


GR10-4 (Oral) 09:15 - 09:30Fabrication and evaluation of thick BGaN neutron detection diodesTakayuki Maruyama,1 Yuri Takahashi,1 Natsuki yamada,1 Kazushi Ebara,1 Hisaya Nakagawa,2 Shigeyoshi Usami,3

Yoshio Honda,4 Hiroshi Amano,4,5 Kazunobu Kojima,6 Shigefusa F. Chichibu,4,6 Yoku Inoue,1 Toru Aoki,7 andTakayuki Nakano1

1Dept. of Electronics and Materials Science, Shizuoka University, Japan, 2Dept. of Nanovision Technology, ShizuokaUniversity, Japan, 3Dept. of Electrical Engineering and Computer Science, Nagoya University, Japan, 4Institute of Materialsand Systems for Sustainability, Nagoya University, Japan, 5Akasaki Research Center, Nagoya University, Japan, 6Institute ofMultidisciplinary Research for Advanced Materials, Tohoku University, Japan, 7Research Institute of Electronics, ShizuokaUniversity, Japan

GR10-5 (Oral) 09:30 - 09:45Kinetics analysis of desorption process in BGaN MOVPEKazushi Ebara,1 Ken Mochizuki,1 Yoku Inoue,1 Toru Aoki,2 Kazunobu Kojima,3 Shigefusa F. Chichibu,3,4 andTakayuki Nakano1

1Department of Electronics and Materials Science, Shizuoka University, Japan, 2Research Institute of Electronics, ShizuokaUniversity, Japan, 3Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan, 4Institute ofMaterials and Systems for Sustainability, Nagoya University, Japan

GR10-6 (Oral) 09:45 - 10:00Surface adatom density and lifetime on polar GaN surfaces during MBE andMOVPE: a theoretical approachYuya Inatomi,1 Yoshihiro Kangawa,1,2,3 Alberto Pimpinelli,4 and Theodore L. Einstein5

1Department of Aeronautics and Astronautics, Kyushu University, Japan, 2RIAM, Kyushu University, Japan, 3IMaSS,Nagoya University, Japan, 4SCI, Rice University, United States of America, 5Department of Physics, University of Maryland,United States of America

GR10-7 (Oral) 10:00 - 10:15Compositional limits of ternary III-Nitride alloys and strategies to overcome themLiverios Lymperakis, Christoph Freysoldt, and Jörg NeugebauerMax-Planck-Institut für Eisenforschung GmbH, Germany

GR10-8 (Oral) 10:15 - 10:30Coalesced, Centimeter-scale GaN Films on Amorphous Substrates via MOCVDGrowth on a Silicon Seed Layer Fabricated by Aluminum-induced CrystallizationMel Hainey Jr.,1 Yoann Robin,2 Hiroshi Amano,2 and Noritaka Usami11Department of Materials Process Engineering, Nagoya University, Japan, 2Insititute of Materials and Systems for Sustain-ability, Nagoya University, Japan

DRAFT


OD11 Device Process Zuiun 2 （瑞雲 2） 08:30-10:15

OD11-1 (Oral) 08:30 - 08:45Wafer-scale electrochemical porosification and mesoporous GaN substrates for over-growth of devicesTongtong Zhu,1 Yingjun Liu,1 Tao Ding,2 Wai Yuen Fu,3 John Jarman,1 Christopher Xiang Ren,1 R. Vasant Kumar,1

and Rachel A. Oliver1

1Dept. of Materials Science and Metallurgy, University of Cambridge, United Kingdom, 2Nanophotonics Centre, CavendishLaboratory, University of Cambridge, United Kingdom, 3Dept. of Electrical and Electronic Engineering, University of HongKong, Hong Kong

OD11-2 (Oral) 08:45 - 09:00Fabrication Process of InGaN High-Order Deeply Etched DBR LaserSo Kusumoto,1 Daiki Tazuke,1 Kazuhisa Ikeda,1 Masahiro Uemukai,1 Ryuji Katayama,1 Jumpei Tajima,2 ToshikiHikosaka,2 and Shinya Nunoue2

1Graduate School of Engineering, Osaka University, Japan, 2Corporate R&D Center, Toshiba Corporation, Japan

OD11-3 (Oral) 09:00 - 09:15Area Expansion of Surface-Activated Wafer Bonding using GaN Samples with Im-proved Surface Smoothness and Reduced CurvatureTakuya Onodera,1 Ryo Tanabe,1 Masahiro Uemukai,1 Toshiki Hikosaka,2 Sinya Nunoue,2 Maki Kushimoto,3 Hea-jeong Cheong,4 Yoshio Honda,4 Hiroshi Amano,3,4 and Ryuji Katayama1

1Graduate School of Engineering, Osaka Univ., Japan, 2Corporate R&D Center, Toshiba Corporation, Japan, 3Department ofElectronics, Nagoya Univ., Japan, 4Institute of Materials and Systems for Sustainability, Nagoya Univ., Japan

OD11-4 (Oral) 09:15 - 09:30Advanced integration of polymer microlens arrays with GaN microLEDsDaria Bezshlyakh,1,2 Steffen Bornemann,1 Jan Gülink,1 Hutomo Suryo Wasisto,1 and Andreas Waag1,2

1Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Univer-sität Braunschweig, Germany, 2Braunschweig International School on Nanometrology (b-IGSM), Technische UniversitätBraunschweig, Germany

OD11-5 (Oral) 09:30 - 09:45Improved Performance of 280 nm LEDs using an Ammonium Hydroxide Mist Treat-ment on n-AlGaN CladdingChung-Cheng Wu,1 Chih-Yi Yang,1 Shuo-Huang Yuan,1 Sin-Liang Ou,2 Yi-An Chen,1 Ray-Hua Horng,3 and Dong-Sing Wuu1

1Department of Materials Science and Engineering, National Chung Hsing University, Taiwan, 2Bachelor Program for Designand Materials for Medical Equipment and Devices, Da-Yeh University, Taiwan, 3Institute of Electronics, National Chiao TungUniversity, Taiwan

OD11-6 (Oral) 09:45 - 10:00Enhanced UV luminescence in AlGaN multiple quantum wells and UV-LEDs incor-porating lateral polarity structureWei Guo,1 Jie’an Jiang,1 Haiding Sun,2 Xiaohang Li,2 and Jichun Ye1

1Ningbo Institute of Materials Technology and Engineering, CAS, China, 2King Abdullah University of Science and Technol-ogy, Saudi Arabia

DRAFT


OD11-7 (Oral) 10:00 - 10:15Nanoscale insights into structure size and surface effects in InGaN/GaN nanoLEDsJan Gülink, Steffen Bornemann, Klaas Strempel, Hendrik Spende, Muhammad Fahlesa Fatahilah, Hutomo SuryoWasisto, and Andreas WaagInstitute of Semiconductor Technology (IHT) and Laboratory of Emerging Nanometrology (LENA), Technische UniversitätBraunschweig, Germany

break 10:25 - 10:55

CR13 Single Photon Emission Hogaku （邦楽） 10:55-12:45

CR13-1 (Invited) 10:55 - 11:20Single Photon Emission Dynamics of III-Nitride Quantum DotsMark Holmes,1,2 Munetaka Arita,2 and Yasuhiko Arakawa2

1Institute of Industrial Science, The University of Tokyo, Japan , Japan, 2Institute for Nano Quantum Information Electronics,The University of Tokyo, Japan, Japan

CR13-2 (Invited) 11:20 - 11:45Non-polar InGaN Quantum Dots: Polarised Single-Photon Sources withTemperature-dependent Fine Structure Splitting, Reduced Lifetime and SpectralDiffusionTong Wang,1 Tim J. Puchtler,1 Tongtong Zhu,2 Helen P. Springbett,2 John C. Jarman,2 Claudius C. Kocher,1 Luke P.Nuttall,1 Rachel A. Oliver,2 and Robert A. Taylor1

1Department of Physics, University of Oxford, United Kingdom, 2Department of Materials Science and Metallurgy, Universityof Cambridge, United Kingdom

CR13-3 (Oral) 11:45 - 12:00High purity single photon emission from an InGaN quantum dot in a GaN nanowirefabricated via reverse-reaction growthXiaoxiao Sun,1 Ping Wang,1 Bowen Sheng,1 Tao Wang,1 Zhaoying Chen,1 Kang Gao,2 Weikun Ge,1 YasuhikoArakawa,2 Bo Shen,1,3 Mark Holmes,2,4 and Xinqiang Wang1,3

1School of Physics, Peking University, China, 2Institute for Nano Quantum Information Electronics, the University of Tokyo,Japan, 3Collaborative Innovation Center of Quantum Matter, Peking University, China, 4Institute of Industrial Science, theUniversity of Tokyo, Japan

CR13-4 (Oral) 12:00 - 12:15Influence of lateral confinement on the emission properties of deterministic InGaNquantum discs - from 1D to 3D confinementStefan T. Jagsch,1 Benjamin Damilano,2 Stéphane Vézian,2 Axel Hoffmann,1 Jean Massies,2 and Markus R. Wagner1

1Institute of Solid State Physics, Technical University Berlin, Germany, 2CNRS, CRHEA, Université Côte d’Azur, France

CR13-5 (Oral) 12:15 - 12:30Suppressing spectral diffusion in InGaN quantum dotsKang Gao,1 Helen Springbett,2 Tongtong Zhu,2 Rachel Oliver,2 Yasuhiko Arakawa,1 and Mark Holmes1,3

1Institute for Nano Quantum Information Electronics, The University of Tokyo, Japan, 2University of Cambridge, UnitedKingdom, 3Institute of Industrial Science, The University of Tokyo, Japan

DRAFT


CR13-6 (Oral) 12:30 - 12:45Self-organized grown GaN quantum dots on a deep UV AlN/AlGaN distributedBragg reflectorHannes Schürmann,1 Gordon Schmidt,1 Christoph Berger,1 Sebastian Metzner,1 Peter Veit,1 Jürgen Bläsing,1 FrankBertram,1 Armin Dadgar,1 André Strittmatter,1 Jürgen Christen,1 Stefan Kalinowski,2 and Axel Hoffmann2

1Institute of Physics, Otto-von-Guericke-University Magdeburg, Germany, 2Institute of Solid State Physics, Technical Uni-versity Berlin, Germany

GR11 AlN I Ohtori 1（鳳 1） 10:55-12:55

GR11-1 (Oral) 10:55 - 11:10High temperature ammonia-free MOVPE growth of AlNXUQIANG SHEN, Kazutoshi Kojima, Mitsuaki Shimizu, and Hajime OkumuraNational Institute of Advanced Industrial Science and Technology (AIST), Japan

GR11-2 (Oral) 11:10 - 11:25Crack-free AlN crystal grown on h-BN/sapphire substrate by metal-organic chemicalvapor depositionQingqing Wu,1,2 Yanan Guo,1,2 Jianchang Yan,1,2 Liang Zhang,1,2 Junxi Wang,1,2 and Jinmin Li1,2

1Institute of Semiconductors, Chinese Academy of Sciences, China, 2University of Chinese Academy of Sciences, China

GR11-3 (Oral) 11:25 - 11:40AlN templates grown by MBE to develop GaN-on-SiStephanie Rennesson,1 Eric Frayssinet,1 Philippe Vennegues,1 Jean Massies,1 and Fabrice Semond1,2

1Universite Cote d’Azur, CRHEA-CNRS, France, 2EasyGaN, France

GR11-4 (Oral) 11:40 - 11:55Evaluation of DC sputtered AlN template by wet KOH etchingYosuke Mogami,1,2 Shogo Motegi,1,2 Atsushi Osawa,3 Kazuto Osaki,3 Yukitake Tanioka,3 Atsushi Maeoka,3 Masa-fumi Jo,1 Noritoshi Maeda,1 Hiroyuki Yaguchi,1 and Hideki Hirayama1

1RIKEN, Japan, 2Saitama University, Japan, 3SCREEN Finetech Solutions Co. Ltd., Japan

GR11-5 (Oral) 11:55 - 12:10The transition of preferred orientation of Wurtzite (0002) to (11-20)-plane via heavilyFe doping to AlN using RF sputteringNobuyuki Tatemizo, Saki Imada, Koji Nishio, and Toshiyuki IsshikiFaculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Japan

GR11-6 (Oral) 12:10 - 12:25A route to achieve high-quality AlN epi-layer on nano-patterned AlN templateprepared by nano-imprint lithographyNan Xie, Fujun Xu, Lisheng Zhang, Mingxing Wang, Yuanhao Sun, Baiyin Liu, and Shen BoState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China

DRAFT


GR11-7 (Oral) 12:25 - 12:40In-situ observation of AlN growth on Ni-Al flux using levitation techniqueMasayoshi Adachi,1 Sonoko Hamaya,1 Yuji Yamagata,1 Andrew Leoch,2 Justin Fada,2 Laura Wilson,2 JenniferCarter,2 Roger French,2 and Hiroyuki Fukuyama1

1Tohoku University, Japan, 2Case Western Reserve University, United States of America

GR11-8 (Oral) 12:40 - 12:55AlN Formation by Interfacial Reaction between Al Layer and GaN SubstrateMarsetio Noorprajuda, Makoto Ohtsuka, Masayoshi Adachi, and Hiroyuki FukuyamaTohoku University, Japan

OD12 InGaN LED III Ohtori 2 （鳳 2） 10:55-12:50

OD12-1 (Invited) 10:55 - 11:20InGaN underlayer in LEDs: a trap for non-radiative defectsCamille Haller, Jean-François Carlin, Gwénolé Jacopin, Wei Liu, Denis Martin, Raphaël Butté, and Nicolas GrandjeanEPFL, Switzerland

OD12-2 (Oral) 11:20 - 11:35Wavelength tuning of InGaN/GaN light-emitting diode on flexible metal substrateby bending processSang-Jo Kim,1 Kwang Jae Lee,1 Semi Oh,1 Jang Hwan Han,1 Dong-Seon Lee,1,2 and Seong-Ju Park1

1School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea, 2School ofElectrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Republic of Korea

OD12-3 (Oral) 11:35 - 11:50Fabrication of Epitaxial GaN-based Devices on Metal FoilsVladimir Matias and Christopher SheehaniBeam Materials, United States of America

OD12-4 (Oral) 11:50 - 12:05Dual-wavelength emission from semipolar and polar InGaN MQWs directly grownon patterned c-plane sapphire substratesJie Jin,1 Lai Wang,1 Zhibiao Hao,1 Yi Luo,1 Changzheng Sun,1 Bing Xiong,1 Yanjun Han,1 Jian Wang,1 Hongtao Li,1

Bowen Shen,2 Frank Bertram,2 Anja Dempewolf,2 and Jürgen Christen2

1Tsinghua University, China, 2Otto-von-Guericke-University Magdeburg, Germany

OD12-5 (Oral) 12:05 - 12:20Fabrication and Characterization of Phosphor-Free Warm White Light-EmittingDiodes based on InGaN/GaN Three-Dimensional Dodecagonal Ring StructureYoung Chul Sim, Sunghan Choi, Hwan-Seop Yeo, Ki-Young Woo, Hyun Gyu Song, and Yong-Hoon ChoDepartment of Physics, Korea Advanced Institute of Science and Technology, Republic of Korea

OD12-6 (Oral) 12:20 - 12:35Monolithic InGaN RGB LEDs for full color micro-displaysWai Yuen Fu and Hoi Wai ChoiDepartment of Electrical and Electronic Engineering, the University of Hong Kong, Hong Kong

DRAFT


OD12-7 (Oral) 12:35 - 12:50Light Emitting Diodes on Semipolar (11-22) and (20-21) GaN on Patterned SapphireTemplatesMichel Khoury,1 Hongjian Li,1 Bastien Bonef,1 Leah Kuritzky,1 Asad Mughal,1 Philippe DeMierry,2 James. S. Speck,1

and Steven P. DenBaars1

1Materials Department, University of California, Santa Barbara, United States of America, 2CNRS-CRHEA, France

ED11 Reliability Ohtori 3 （鳳 3） 10:55-12:50

ED11-1 (Invited) 10:55 - 11:20Reliability Issues in Lateral and Vertical GaN FETs for Power ElectronicsGaudenzio Meneghesso, Matteo Meneghini, Carlo De Santi, Alessandro Barbato, Marco Barbato, Matteo Borga,Eleonora Canato, Elena Fabris, Fabrizio Masin, Maria Ruzzarin, Alaleh Tajalli, and Enrico ZanoniDepartment of Information Engineering, University of Padova, Italy

ED11-2 (Oral) 11:20 - 11:35Reverse breakdown studies of GaN MOSCAPs to understand the oxide breakdownin GaN trench MOSFETsChirag Gupta, Silvia H. Chan, Stacia Keller, and Umesh K. MishraUniversity of California Santa Barbara , United States of America

ED11-3 (Oral) 11:35 - 11:50Threshold Voltage Instability in p-GaN Gate HEMTs under Static and DynamicPositive Gate StressJiabei He, Gaofei Tang, Mengyuan Hua, and Kevin J. ChenDepartment of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong

ED11-4 (Oral) 11:50 - 12:05Investigation and improvement of avalanche ruggedness of GaN p-i-n diodes grownon sapphire substrateWeizong Xu, Kaiwen Nie, Wenkai Liu, Fangfang Ren, Dong Zhou, Rong Zhang, Youdou Zheng, and Hai LuSchool of Electronic Science and Engineering, Nanjing University, China

ED11-5 (Oral) 12:05 - 12:20Impact of oxide/barrier fixed charge on threshold voltage instabilities in AlGaN/GaNmetal-oxide-semiconductor heterostructuresMilan Tapajna,1 Jakub Drobny,1 Filip Gucmann,1 Kristina Husekova,1 Tamotsu Hashizume,2 and Jan Kuzmik1

1Institute of Electrical Engineering, Slovak Academy of Sciences, Slovakia, 2Research Center for Integrated Quantum Elec-tronics, Hokkaido University, Japan

ED11-6 (Oral) 11:50 - 12:05Scanning internal photoemission microscopy measurements of n-GaN Schottkycontacts under applying voltageKenji Shiojima,1 Masataka Maeda,1 and Tomoyoshi Mishima2

1University of Fukui, Japan, 2Hosei University, Japan

DRAFT


ED11-7 (Oral) 12:05 - 12:20Impact of regrowth (on wet etched and dry etched interface) on the breakdownperformance of N-polar GaN MIS-HEMTsShubhra Pasayat, Anchal Agarwal, Christian Wurm, Athith Krishna, Xun Zheng, Brian Romanczyk, Chirag Gupta,Matthew Guidry, Stacia Keller, and Umesh MishraUniversity of California, Santa Barbara, United States of America

GR12 Growth for HEMTs Zuiun 1 （瑞雲 1） 10:55-12:55

GR12-1 (Oral) 10:55 - 11:10Generation of Hole Gas in Non-inverted InAl(Ga)N/GaN HeterostructuresStanislav Hasenohrl,1 Prerna Chauhan,1 Edmund Dobrocka,1 Roman Stoklas,1 Lubomir Vanco,2 Marian Vesely,2

Filip Gucmann,3 Martin Kuball,3 and Jan Kuzmik1

1Slovak Academy of Sciences, Institute of Electrical Engineering , Slovakia, 2Slovak Uiversity of Technology, STU Centre fornanodiagnostics, Slovakia, 3University of Bristol, Center for Device Thermography and Reliability, United Kingdom

GR12-2 (Oral) 11:10 - 11:25Investigation of growth parameters for (Sc,Al)N-barrier HEMT structures byplasma-assisted MBEKathrin Frei,1 Lutz Kirste,2 Mario Prescher,2 Sebastian Schütt,2 Rolf Aidam,2 Stefan Müller,2 Adrian Vogt,1 OliverAmbacher,2,3 and Michael Fiederle1

1Materials Research Center Freiburg, University of Freiburg, Germany, 2Fraunhofer-Institute for Applied Solid State Physics,Freiburg, Germany, 3Department of Sustainable Systems Engineering, University of Freiburg, Germany

GR12-3 (Oral) 11:25 - 11:40Impact of unintentional GaN interlayers on the mobility of InGaN two-dimensionalelectron gasesPirouz Sohi, Jean-François Carlin, and Nicolas GrandjeanInstitute of Physics, EPFL, Switzerland

GR12-4 (Oral) 11:40 - 11:55Investigating the origin of low mobility in AlN/GaN/AlN heterostructuresPirouz Sohi, Jean-François Carlin, and Nicolas GrandjeanInstitute of Physics, EPFL, Switzerland

GR12-5 (Oral) 11:55 - 12:10Scandium Aluminum Nitride as an Emerging Material for High Power TransistorsMatthew Hardy,1 Brian Downey,1 Neeraj Nepal,1 David Storm,1 Scott Katzer,1 John Logan,2 Brian Schultz,2 EduardoChumbes,2 Thomas Kazior,2 and David Meyer1

1Naval Research Laboratory, United States of America, 2Raytheon Integrated Defense Systems, United States of America

DRAFT


GR12-6 (Oral) 12:10 - 12:25On the improvement of electrical properties of AlGaN/AlN/GaN, AlInN/AlN/GaNand AlInGaN/AlN/GaN heterostructures grown on silicon: The role of Ga precursorand the carrier gasYu-Chih Chen,1 Indraneel Sanyal,1 Chuan-Yue Yu,1 Wei-Jen Hsueh,1 and Jen-Inn Chyi1,2

1Department of Electrical Engineering, National Central University, Taiwan, 2Research Centre for Applied Sciences, AcademiaSinica, Taiwan

GR12-7 (Oral) 12:25 - 12:40Epitaxial growth and Characterization of P-GaN gated HEMT on compliant poly-AlN substrate for e-mode power devicesWeiming Guo,1 Karen Geens,1 Ming Zhao,1 Hannes Behmenburg,2 Dirk Fahle,2 Vlad Odnoblyudov,3 Cem Basceri,3

Ozgur Aktas,3 and Stefaan Decoutere1

1imec, Belgium, 2AIXTRON SE, Germany, 3Qromis, Inc., United States of America

GR12-8 (Oral) 12:40 - 12:55Effect of InGaN/GaN superlattice on characteristics of AlGaN/GaN HEMTHideyuki Itakura,1 Toshihumi Nomura,1 Naoki Arita,1 Narihito Okada,1 Christian Wetzel,2 Tat-Sing Paul Chow,2

and Kazuyuki Tadatomo1

1Yamaguchi University„ Japan, 2Rensselaer Polytechnic Institute, United States of America

OD13 Novel Optical Devices II Zuiun 2 （瑞雲 2） 10:55-12:40

OD13-1 (Oral) 10:55 - 11:10(Al,In)GaN Optical AmplifiersSzymon Stanczyk,1,2 Anna Kafar,1,2 Szymon Grzanka,1,2 Stephen Najda,2 Thomas Slight,3 Tadeusz Suski,1 and PiotrPerlin1,2

1Institute of High Pressure Physics PAS, Poland, 2TopGaN, Poland, 33Compound Semiconductor Technologies Global, UnitedKingdom

OD13-2 (Oral) 11:10 - 11:25Development of a III-nitride electro-optic modulator for UV-visJens Wieben, Carsten Beckmann, Hady Yacoub, Andrei Vescan, and Holger KalischCompound Semiconductor Technology, RWTH Aachen University, Germany

OD13-3 (Oral) 11:25 - 11:40A Novel Light-Emitting AlGaN/GaN HEMT StructureChih-Yao Chang and Chih-Fang HuangInstitute of Electronics Engineering, National Tsing Hua University, Taiwan

OD13-4 (Oral) 11:40 - 11:55Broadband UV sensing utilizing epitaxial βββ-Ga2O3/GaN heterojunctionAnisha Kalra, Sandeep Vura, Shashwat Rathkanthiwar, Rangarajan Muralidharan, Srinivasan Raghavan, and Dig-bijoy Neelim NathCentre for Nanoscience and Engineering, Indian Institute of Science, Bangalore, India , India

DRAFT


OD13-5 (Oral) 11:55 - 12:10High Short-Circuit Current Density Provided by III-Nitride Nanorod on Si (111)Heterojunction Photovoltaic CellsChing-Wen Chang,1 Paritosh V. Wadekar,1 Yu-Hung Lee,1 Hsuan-Yu Chen,1 Ching-Feng Cheng,1 Jia-Wei Zhang,1

Cha-Her Lin,1 Cheng-Lin Xu,1 Hui-Chun Huang,2 Xin-Ren Yu,1 Wei-Chih Lai,3 Quark Y. Chen,1,4 and Li-Wei Tu1,5

1Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan,2Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, De-partment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Taiwan, 3Department of Photonics,National Cheng Kung University, Taiwan, 4Texas Center of Superconductivity and Department of Physics, University ofHouston, United States of America, 5Department of Medical Laboratory Science and Biotechnology, Kaohsiung MedicalUniversity, Taiwan

OD13-6 (Oral) 12:10 - 12:25Investigation of InGaN-based photoelectrodes with p-GaN layers for Photoelectri-calchemical hydrogen generation by water splittingDaisuke Iida,1 Takamitsu Shimizu,2 Patrick Ginet,3 and Kazuhiro Ohkawa1

1Electrical Engineering, King Abdullah University of Science and Technology, Saudi Arabia, 2Department of Applied Physics,Tokyo University of Science, Japan, 3Air Liquide Laboratories, Japan

OD13-7 (Oral) 12:25 - 12:40Impact of surface morphology of Al(Ga)N interlayer for polarization-engineeredwater splitting photocathodeHiroaki Maruyama,1 Katsushi Fujii,2 Yoshiaki Nakano,1 and Masakazu Sugiyama1

1Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, Japan,2RIKEN, Japan

lunch 12:50 - 14:30

CR14 Nanophotonics Hogaku （邦楽） 14:30-16:25

CR14-1 (Invited) 14:30 - 14:55Benchmarking visible emitting GaN-based photonic nanocavities: quality factorquantification and surface effectsIan Rousseau, Raphaël Butté, Irene Sánchez-Arribas, Gordon Callsen, Gwénolé Jacopin, Kanako Shojiki, Jean-François Carlin, and Nicolas GrandjeanInstitute of Physics, Ecole Polytechnique Fédérale de Lausanne, Switzerland

CR14-2 (Oral) 14:55 - 15:10Coupling of Photonic and Plasmonic Band States in InGaN/GaN Nanocolumn Plas-monic CrystalsTakao Oto,1 Kazuma Kikuchi,2 Koichi Okamoto,4 Rie Togashi,2,3 and Katsumi Kishino2,3

1Department of Electronics Engineering, Yamagata University, Japan, 2Department Engineering and Applied Sciences,Sophia University, Japan, 3Sophia Nanotechnology Research Center, Sophia University, Japan, 4Department of Physics andElectronics, Osaka Prefecture University, Japan

DRAFT


CR14-3 (Oral) 15:10 - 15:25Cathodoluminescence study of Mg activation in core-shell GaN nanowiresWei Yi,1 Jun Chen,1 Takashi Kimura,1 Tetsuya Takeuchi,2 Satoshi Kamiyama,2 and Takashi Sekiguchi1,3

1National Institute for Materials Science (NIMS) , Japan, 2Meijo University, Japan, 3Tsukuba university, Japan

CR14-4 (Oral) 15:25 - 15:40Nanoscale Imaging of Individual AlN/GaN/AlN Quantum Disk embedded in GaNNanowiresFrank Bertram,1 Gordon Schmidt,1 Peter Veit,1 Silke Petzold,1 Sebastian Metzner,1 Amalia Fernando Saavedra,2

Steven Albert,2 Ana María Bengoechea-Encabo,2 Miguel Ángel Sánchez-Garcia,2 Enrique Calleja,2 and JürgenChristen1

1Institute of Physics, Otto-von-Guericke-University Magdeburg, Germany, 2ISOM and Departamento de Ingeniería Elec-trónica, Universidad Politécnica de Madrid, Spain

CR14-5 (Oral) 15:40 - 15:55Diameter-dependent emission characteristics of InGaN/GaN multi quantum wellnanopillars fabricated by hydrogen environment anisotropic thermal etching(HEATE)Yusuke Namae,1 Daichi Ito,1 Yusei Kawasaki,1 Yuki Ooe,1 Akihiro Matsuoka,1 Yuta Moriya,1 and Akihiko Kikuchi1,2

1Sophia University, Japan, 2Sophia Nanotechnology Research Center, Japan

CR14-6 (Oral) 15:55 - 16:10Vertical Emission of Quantum Wires - a Route to Quantum Wire based Nano-VCSELsLudwig Albrecht Thorsten Greif,1 Jan Müßener,2 Stefan Kalinowski,1 Andrei Schliwa,1 Axel Hoffmann,1 MartinEickhoff,2 and Markus Raphael Wagner1

1Department of Solid State Physics, Technical University Berlin, Germany, 2Department of Solid State Physics, UniversityBremen, Germany

CR14-7 (Oral) 16:10 - 16:25Fabrication of GaN-based multi-quantum shell LEDKyohei Nokimura,1 Naoki Sone,1,2 Atsushi Suzuki,1 Kazuyoshi Iida,1,3 Minoru Takebayashi,1 Satoshi Kamiyama,1

Tetsuya Takeuchi,1 Motoaki Iwaya,1 and Isamu Akasaki1,4

1Department of Materials Sciences and Engineering, Meijo University, Japan, 2Koito Manufacturing Co., Ltd, Japan, 3ToyodaGosei Co., Ltd, Japan, 4Akasaki Research Center, Nagoya University, Japan

OD14 DUV LED I Ohtori 2 （鳳 2） 14:30-16:25

OD14-1 (Invited) 14:30 - 14:55Auger recombination in AlGaN quantum wells for deep UV light-emitting diodesFelix Nippert,1 Mohammad Tollabi Mazraehno,1,2 Matthew J. Davies,2 Marc P. Hoffmann,2 Hans-Jürgen Lugauer,2

Thomas Kure,1 Michael Kneissl,1 Axel Hoffmann,1 and Markus R. Wagner1

1Institut für Festkörperphysik, Technische Universität Berlin, Germany, 2OSRAM Opto Semiconductors GmbH, Germany

DRAFT


OD14-2 (Oral) 14:55 - 15:10Microscopic structure of boosting IQE for AlGaN-based UV-B (285 nm) LED grownon macrostepsYosuke Nagasawa,1 Kazunobu Kojima,2 Akira Hirano,1 Masamichi Ipponmatsu,1 Yoshio Honda,3 Hiroshi Amano,3

Isamu Akasaki,4 and Shigefusa F. Chichibu2,3

1UV Craftory Co., Ltd., Japan, 2IMRAM-Tohoku University, Japan, 3IMaSS-Nagoya University, Japan, 4Meijo University,Japan

OD14-3 (Oral) 15:10 - 15:25Improvement in EQE of 294 - 303 nm AlGaN UVB LED by increasing the EmissionEfficiency from Multiple Quantum Well (MQW)M. Ajmal Khan,1,2 Noritoshi Maeda,1,2 Yoichi Yamada,3 and Hideki Hirayama 1,2

1RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198, Japan, Japan, 2RIKEN Center for Advanced Photonics (RAP), 2-1,Hirosawa, Wako, Saitama 351-0198, Japan, Japan, 3Faculty of Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube,Yamaguchi, 755-8611, Japan, Japan

OD14-4 (Oral) 15:25 - 15:40Impact of temperature and current density on the degradation behavior of UVBLEDsJan Ruschel,1 Johannes Glaab,1 Batoul Beidoun,1 Jens Rass,1 Arne Knauer,1 Tim Kolbe,1 Neysha Lobo Ploch,1 MarkusWeyers,1 Sven Einfeldt,1 and Michael Kneissl21Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Germany, 2Technische Universität Berlin,Institut für Festkörperphysik, Germany

OD14-5 (Oral) 15:40 - 15:55Performances and reliability analysis of 280nm High Power DUV LEDsNicola Trivellin,1,2 Desiree Monti,1 Matteo Buffolo,1 Carlo De Santi,1 Matteo Meneghini,1 Enrico Zanoni,1 andGaudenzio Meneghesso1

1Department of Information Engineering - University of Padova, Italy, 2LightCube SRL, Italy

OD14-6 (Oral) 15:55 - 16:10Spectrally and spatially resolved micro-electroluminescence investigation of degra-dation effects in UV-B LEDsLaveen Prabhu Selvaraj,1 Ulrich Theodor Schwarz,1 Johannes Glaab,2 Jan Ruschel,2 Jens Rass,2 Sven Einfeldt,2 FrankMehnke,3 Johannes Enslin,3 Tim Wernicke,3 and Michael Kneissl31Experimental Sensor Science,Chemnitz University of Technology, Chemnitz, Germany, 2Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany, 3Institute of Solid State Physics,Technische Universität Berlin, Berlin,Germany

OD14-7 (Oral) 16:10 - 16:25Thin-film UVB LEDs enabled by electrochemical etching of AlGaNMichael A. Bergmann,1 Johannes Enslin,2 Filip Hjort,1 Tim Wernicke,2 Michael Kneissl,2 and Åsa Haglund1

1Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden, 2Institute of Solid StatePhysics, Technische Universität Berlin, Germany

DRAFT


ED12 Process II Ohtori 3 （鳳 3） 14:30-16:30

ED12-1 (Oral) 14:30 - 14:45Chemical Treatment Effects on Schottky Contacts to MOCVD N-polar GaNDolar Khachariya,1 Dennis Szymanski,2 Biplab Sarkar,2 Pramod Reddy,3 Max Robbins,1 Erhard Kohn,2 LedaLunardi,1 Zlatko Sitar,2 Ramon Collazo,2 and Spyridon Pavlidis1

1Department of Electrical and Computer Engineering, North Carolina State University, United States of America, 2Departmentof Materials Science and Engineering, North Carolina State University, United States of America, 3Adroit Materials, Cary,NC, United States of America

ED12-2 (Oral) 14:45 - 15:00Annealing temperature dependence of alloy contact for N-polar GaN HEMT struc-tureKoushi Hotta,1 Yumiko Tomizuka,1 Kosuke Itagaki,1 Isao Makabe,2 Shigeki Yoshida,2 and Yasuyuki Miyamoto1

1Tokyo Tech, Japan, 2Sumitomo Electric Industries, Japan

ED12-3 (Oral) 15:00 - 15:15Development of Au-free high voltage and high power AlGaN/GaN HEMTs on sili-con substratesAndrzej Taube,1 Marek Ekielski,1 Marek Guziewicz,1 Maciej Kaminski,1 Maciej Kozubal,1 Karolina Pagowska,1

Krystyna Golaszewska-Malec,1 Renata Kruszka,1 Kamil Kosiel,1 Anna Piotrowska,1 Joanna Zdunek,2 BoguslawaAdamczyk-Cieslak,2 Justyna Grzonka,2 and Anna Szerling1

1Institute of Electron Technology, Poland, 2Faculty of Materials Science and Engineering, Warsaw University of Technology,Poland

ED12-4 (Oral) 15:15 - 15:30Large-Vth, Low-gate-current p-GaN HEMTs with a TiW Gate MetalRenqiang Zhu, Huaxing Jiang, and Kei May LauDepartment of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong

ED12-5 (Oral) 15:30 - 15:45Investigation of Ta2O5 as a promising high k dielectric for InAlN/GaN-on-Si HEMTSandeep kumar,1 H. Kumar,1 A S. Pratiyush,1 S Vura,1 V S. Charan,1 S. B. Dolmanan,2 S. Tripathy,2 R. Muralidharan1,1

and D. N. Nath1

1Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science (IISc), Bangalore 560012, India, 2Instituteof Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A*STAR), Innovis 08-03, 2Fusionopolisway, Singapore 1386342, Singapore

ED12-6 (Oral) 15:45 - 16:00Reduction in Contact Resistance of n-type AlN using graded AlGaN cap layerMasanobu Hiroki and Kazuhide KumakuraNTT Basic Research Laboratories, Japan

ED12-7 (Oral) 16:00 - 16:15Effect of a TiN extension of the source contact on the electrical characteristics ofE/D-mode AlGaN/GaN HEMTLing Yang,1 Bin Hou,1 Minhan Mi,2 Meng Zhang,1 Mei Wu,2 Qing Zhu,1 Sheng Wu,2 Jiejie Zhu,1 Xiaowei Zhou,1

Xiaohua Ma,1 and Yue Hao2

1School of advanced materials and nanotechnology, Xidian University, China, 2School of Microelectronic, Xidian University,China

DRAFT


ED12-8 (Oral) 16:15 - 16:30Investigation on in-situ SiNx passivation layer grown on AlGaN/GaN heterostruc-ture and its gate-first process compatibilityLiang Cheng, Weizong Xu, Fangfang Ren, Dong Zhou, Danfeng Pan, Rong Zhang, Youdou Zheng, and Hai LuSchool of Electronic Science and Engineering, Nanjing University, China

GR13 Semipolar & Nonpolar Zuiun 1 （瑞雲 1） 14:30-16:30

GR13-1 (Oral) 14:30 - 14:45Polar-plane-free faceted InGaN quantum wells toward highly radiative pastel andwhite color synthesesYoshinobu Matsuda, Mitsuru Funato, and Yoichi KawakamiDepartment of Electronic Science and Engineering, Kyoto University, Japan

GR13-2 (Oral) 14:45 - 15:00Elimination of basal-plane stacking faults in semipolar GaN and light emittingdiodes grown on sapphire substratesJie Song,1,2 Joowon Choi,1,2 and Jung Han1

1Department of Electrical Engineering, Yale University, USA, United States of America, 2Saphlux Inc., United States ofAmerica

GR13-3 (Oral) 15:00 - 15:15Optical and structural characterization of GaInN/GaN multiple quantum wellsgrown on nonpolar a-plane GaN templates by MOVPEShunya Otsuki,1 Daiki Jinno,2 Hisayoshi Daicho,2 Satoshi Kamiyama,1 Motoaki Iwaya,1 Tetsuya Takeuchi,1 andIsamu Akasaki1,3

1Meijo University, Japan, 2Koito Manufacturing co., ltd., Japan, 3Akasaki Research Center, Nagoya University, Japan

GR13-4 (Oral) 15:15 - 15:30Growth and characterization of templates and InGaN/GaN quantum wells on (0001),(10-13), (11-22) and (10-10) oreintationNan Hu,1 Duc Van Dinh,2 Markus Pristovsek,2 Yoshio Honda,1,2 and Hiroshi Amano1,2,3

1Department of Electronics, Nagoya University, Japan, 2Institute of Materials and Systems for Sustainability, NagoyaUniversity, Japan, 3Akasaki Research Center, Nagoya University, Japan

GR13-5 (Oral) 15:30 - 15:45Semi polar (10-11) GaN growth on silicon-on-insulator substrates for defect reduc-tion and melt back etching suppressionRami Mantach,1,2 Philippe Vennegues,1 Guy Feuillet,2 Jesus Zuniga Perez,1 and Philippe De Mierry1

1CRHEA, CNRS, University of Cote d’azure, France, 2Commissariat de l’energie atomique, Grenoble, France

DRAFT


GR13-6 (Oral) 15:45 - 16:00Thermodynamic analysis of semipolar GaN and AlN under metalorganic vaporphase epitaxy growth conditionYuki Seta,1 Abdul Muizz Pradipto,1 Toru Akiyama,1 Kohji Nakamura,1 Tomonori Ito,1 Akira Kusaba,2 and YoshihiroKangawa2,3

1Department of Physics Engineering, Mie University, Japan, 2Department of Aeronautics and Astronautics, Kyushu Univer-sity, Japan, 3Research Institute for Applied Mechanics, Kyushu University, Japan

GR13-7 (Oral) 16:00 - 16:15

Achieving single crystalline (1122) AlGaN surfaces on m-plane sapphireHumberto M. Foronda, Frank Mehnke, Johannes Enslin, Tim Wernicke, and Michael KneisslTechnische Universität Berlin, Institut für Festkörperphysik, Germany

GR13-8 (Oral) 16:15 - 16:30Controlled crystal orientations of semipolar AlN grown on m-plane sapphire byMOCVDMasafumi Jo, Yuri Itokazu, and Hideki HirayamaRIKEN, Japan

J6 (GR/CR) BN Zuiun 2 （瑞雲 2） 14:30-16:15

J6-1 (Invited) 14:30 - 14:45Hexagonal boron nitride single crystals / Growth of BN : expected functions viaimpurity controlTakashi TaniguchiNational Institute for Materials Science, Japan

J6-2 (Oral) 14:45 - 15:00Isotope effects on the optical properties of hexagonal Boron NitrideBernard Gil,1,5 Phuong Vuong,1 Song Liu,2 Arie Van der Lee,3 Ramon Cuscó,4 Lluis Artús,4 Thierry Michel,1 PierreValvin,1 James H. Edgar,1 and Guillaume Cassabois1

1Laboratoire Charles Coulomb, CNRS-URM 5221, Université de Montpellier, France, 2Department of Chemical Engineering,Kansas State University, United States of America, 3Institut Européen des Membranes, UMR 5635 CNRS-Univ. Montpellier-ENSCM, France, 4Institut Jaume Almera, Consejo Superior de Investigaciones Científicas (ICTJA-CSIC), Spain, 5IoffeInstitute, Saint Petersburg, Russia

J6-3 (Oral) 15:00 - 15:15Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sapphire substrateShigefusa F. Chichibu,1,2,3 Naoki Umehara,4 Kohei Shima,1 Kazunobu Kojima,1 and Kazuhiko Hara4

1Insitiute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan, 2Institute of Materials and Systemsfor Sustainability, Nagoya University, Japan, 3Research Center for Integrated Quantum Electronics, Hokkaido University,Japan, 4Research Institute of Electronics, Shizuoka University, Japan

DRAFT


J6-4 (Oral) 15:15 - 15:30Effect of Growth Temperature on the Structural and Optical Properties of Few LayerHexagonal Boron Nitride by Molecular Beam EpitaxyDavid Arto Laleyan,1 Songrui Zhao,2 Yongjie Wang,1 Eric T. Reid,1 Kelsey Mengle,3 Emmanouil Kioupakis,3 andZetian Mi11University of Michigan, EECS Dept., United States of America, 2Zhejiang University, China, 3University of Michigan, MSEDept., United States of America

J6-5 (Oral) 15:30 - 15:45Wafer-Scale and Selective-Area Growth of High-Quality Hexagonal Boron Nitrideon Ni(111) by Metal-Organic Chemical Vapor DepositionHokyeong Jeong,1 Dong Yeong Kim,1 Jaewon Kim,1 Seokho Moon,1 Nam Han,1 Kyung Song,2 Si-Young Choi,1,2

and Jong Kyu Kim1

1Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Republic ofKorea, 2Materials Modeling and Characterization Department, Korea Institute of Materials Science (KIMS), Republic of Korea

J6-6 (Oral) 15:45 - 16:00Growth of hexagonal boron nitride on AlN/sapphire template by MOVPEXu Yang,1 Shugo Nitta,1 Markus Pristovsek,1 Ya Qiang Liao,1 Yu Huai Liu,1,2 Maki Kushimoto,1 Yoshio Honda,1

and Hiroshi Amano1

1Nagoya University, Japan, 2Zhengzhou University, China

J6-7 (Oral) 16:00 - 16:15Intentional control of electrical conductivity for c-BN films by Si dopingKazuyuki Hirama, Yoshitaka Taniyasu, Hideki Yamamoto, and Kazuhide KumakuraNTT Basic Research Laboratories, Japan

ThP Poster Session 3 Koryu （交流）/ Dome （ドーム） 16:30-18:30

break 18:30 - 19:00

Banquet / Strudent Ivent 19:00 -

DRAFT

International Workshop on Nitride Semiconductors 2018 November 16 (Fri)

November 16 (Fri)

OD15 DUV LED II Concert （コンサート） 08:30-10:25

OD15-1 (Invited) 08:30 - 08:55Short wavelength UVC LEDs: the aluminum nitride substrate advantageLeo J. Schowalter1Crystal IS, United States of America, 2Asahi Kasei, Japan

OD15-2 (Oral) 08:55 - 09:10Development of 240 nm-band high output power AlGaN UVC LEDToshiya Ishiguro,1,2 Reiji Nakamura,1,2 Sachie Fujikawa,3 Noritoshi Maeda,1 Ryuto Machida,2 Hiroki Fujishiro,2

and Hideki Hirayama1

1RIKEN, Japan, 2Tokyo University of science, Japan, 3Tokyo denki University, Japan

OD15-3 (Oral) 09:10 - 09:25Temperature-dependent electroluminescence studies of AlGaN-based deep UVLEDsPriti Gupta,1 Martin Guttmann,1 Norman Susilo,1 Luca Sulmoni,1 Christoph Reich,1 Bettina Neuschulz,1 TimWernicke,1 and Michael Kneissl1,2

1Institute of Solid State Physics, Technische Universität Berlin, Germany, 2Ferdinand Braun Institut, Leibniz-Institut fürHöchstfrequenztechnik, Germany

OD15-4 (Oral) 09:25 - 09:40High power UVB light emitting diodes with optimized n-contact layersArne Knauer,1 Tim Kolbe,1,2 Jens Rass,1,2 Hyun Kyong Cho,1 Sylvia Sylvia Hagedorn,1 Sebastian Walde,1 NeyshaLobo Ploch,1,2 Johannes Glaab,1 Jan Ruschel,1 Carsten Netzel,1 Sven Einfeldt,1 and Markus Weyers1

1Ferdinand-Braun-Institut, Germany, 2UVphotonics NT GmbH, Germany

OD15-5 (Oral) 09:40 - 09:55Highly reflective ruthenium (Ru) p-type electrode for AlGaN deep-UV LEDNoritoshi Maeda and Hideki HIrayamaRIKEN, Japan

OD15-6 (Oral) 09:55 - 10:10Highly reflective Ni doped AlN/Al Ohmic reflectors and its application to AlGaN-based flip-chip deep-UV LEDsTae Ho Lee,1 Tae Hoon Park,1 Kyung Rock Son,1 Ho Jin Lee,1 Song Kyu Kang,1 Hideki Hirayama,2 and Tae GeunKim1

1School of Electrical Engineering, Korea University, Republic of Korea, 2The Institute of Physical and Chemical Research,RIKEN, Japan

OD15-7 (Oral) 10:10 - 10:25Improved emission intensity of UVC-LEDs using strain-relaxation layerKentaro Nagamatsu, Kenjiro Uesugi, Kanako Shojiki, Harumasa Yoshida, and Hideto MiyakeMie University, Japan

DRAFT


GR14 N-polar Ohtori 1（鳳 1） 08:30-10:20

GR14-1 (Invited) 08:30 - 08:55N-polar (Al,Ga,In)N/GaN heterostructures for transistor applications - expandingthe device design spaceStacia Keller and Umesh K. MishraElectrical & Computer Engineering Department, University of California Santa Barbara, United States of America

GR14-2 (Invited) 08:55 - 09:20N-face (000-1) GaN/InN/GaN double-heterostructures emitting near-IR photolumi-nescence grown by metalorganic vapor phase epitaxyTetsuya Akasaka, Monika Schied, and Kazuhide KumakuraNTT Basic Research Laboratories, NTT Corporation, Japan

GR14-3 (Oral) 09:20 - 09:35Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium andtriethyl indium as precursorsCory Lund, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, and Stacia KellerElectrical & Computer Engineering and Materials Departments, University of California Santa Barbara, United States ofAmerica

GR14-4 (Oral) 09:35 - 09:50Ultra-high silicon doped Nitrogen-polar Gallium nitride films using Metal-OrganicChemical Vapor DepositionNirupam Hatui, Athith Krishna, Haoran Li, Chirag Gupta, Dillon Acker-James, Stacia Keller, and Umesh K. MishraDepartment of Electrical and Computer Engineering, University of California, Santa Barbara, United States of America

GR14-5 (Oral) 09:50 - 10:05High-temperature synthesis of green-emitting N-polar (In,Ga)N/GaN quantumwells by plasma-assisted molecular beam epitaxyCaroline Chèze,1 Felix Feix,2 Jonas Lähnemann,1 Timur Flissikowski,1 Marcin Krysko,3 Pawel Wolny,3 HenrykTurski,3 Czeslaw Skierbiszewski,3 Raffaella Calarco,1 and Oliver Brandt1

1Paul-Drude-Institut für Festkörperelektronik, Germany, 2OSRAM Opto Semiconductors, Germany, 3Institute of HighPressure Physics PAS, Poland

GR14-6 (Oral) 10:05 - 10:20

Comparison of the luminous efficiency of GaN/(Al,Ga)N(0001) and (0001) quantumwells grown by molecular beam epitaxyThomas Auzelle,1 Chiara Sinito,1 Jonas Lähnemann,1 Guanhui Gao,1 Timur Flissikowski,1 Oliver Brandt,1 andSergio Fernández-Garrido1,2

1Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Germany, 2Grupo deElectrónica y Semiconductores, Dpto. Física Aplicada, Universidad Autónoma de Madrid, Spain

DRAFT


CR15 InGaN-based QWs II Ohtori 2 （鳳 2） 08:30-10:25

CR15-1 (Invited) 08:30 - 08:55Electrical characterization of Auger recombinationJames S. SpeckMaterials Department, University of California Santa Barbara, United States of America

CR15-2 (Oral) 08:55 - 09:10InGaN quantum wells with improved photoluminescence properties through strain-controlled modification of InGaN underlayerSusumu Kusanagi,1 Yuya Kanitani,1 Yoshihiro Kudo,1 Kunihiko Tasai,2 Hironobu Narui,2 Atsushi A. Yamaguchi,3

and Shigetaka Tomiya1

1Advanced Technology Research Division, Sony Corporation, Japan, 2Device Technology Development Division, Sony Corpo-ration, Japan, 3Optoelectronic Device System R&D Centre, Kanazawa Institute of Technology, Japan

CR15-3 (Oral) 09:10 - 09:25Linearly Polarized Emission of c-plane InGaN/GaN Multiple Quantum WellsGrown on Stripe-Shaped Cavity-Engineered Sapphire SubstrateJongmyeong Kim,1 Seungmin Lee,1 Jehong Oh,1 Jungel Ryu,1 Yongjo Park,2 Seoung-Hwan Park,3 and EuijoonYoon1,2,4,5

1Department of Materials Science and Engineering, Seoul National University, Republic of Korea, 2Energy SemiconductorResearch Center, Advanced Institutes of Convergence Technology, Republic of Korea, 3Department of Electronics Engineering,Catholic University of Daegu, Republic of Korea, 4Research Institute of Advanced Materials, Seoul National University,Republic of Korea, 5Inter-university Semiconductor Research Center, Seoul National University, Republic of Korea

CR15-4 (Oral) 09:25 - 09:40Measurement of the Effects of AlGaN Electron Blocking Layers in GaN Based LEDsby Electron Emission SpectroscopyDaniel J. Myers,1 Kristina Gelzinyte,2 Justin Iveland,1 Jacques Peretti,3 Claude Weisbuch,1,3 and James S. Speck1

1Materials Department, University of California, Santa Barbara, United States of America, 2Institute of Photonics andNanotechnology, Vilnius University, Lithuania, 3Laboratoire de Physique de la Matière Condensée, CNRS-Ecole Polytechnique,Université Paris-Saclay, France

CR15-5 (Oral) 09:40 - 09:55Influence of Electron Beam Irradiation on the Emission Spectra of InGaN/GaNMQWsHendrik Spende,1 Johannes Ledig,2 Christoph Margenfeld,1 Klaas Strempel,1 Hergo-Heinrich Wehmann,1 AngelinaJaros,1 Tobias Voss,1 and Andreas Waag1

1Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), TU Braunschweig,Germany, 2Physikalisch-Technische Bundesanstalt (PTB), Braunschweig, Germany

CR15-6 (Oral) 09:55 - 10:10Gain studies in InGaN microdisksChristelle Brimont,1 Laetitia Doyennette,1 Farsane Tabataba-Vakili,2,3 Iannis Roland,2 Stephanie Rennesson,4 EricFrayssinet,4 Julien Brault,4 Benjamin Damilano,4 Jean-Yves Duboz,4 Fabrice Semond,4 Sebastien Sauvage,2 Mo-hammed El Kurdi,2 Xavier Checoury,2 Raffaele Colombelli,2 Bruno Paulillo,2 Bruno Gayral,3 Philippe Boucaud,2

and Thierry Guillet1

1Laboratoire Charles Coulomb (L2C), Université de Montpellier, CNRS, Montpellier, France, 2C2N, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Orsay, France, 3CEA, INAC-PHELIQS, Univ. Grenoble Alpes, Grenoble, France, 4UCA,CRHEA-CNRS, Rue Bernard Gregory, Valbonne, France

DRAFT


CR15-7 (Oral) 10:10 - 10:25Nanoscopic insight on decoration of non-radiative defects along step-edge in In-GaN/GaN quantum wellWei Liu,1 Camille Haller,1 Jean-François Carlin,1 Raphael Raphael Butté,1 Benon̂t Deveaud,1,2 Gwénolé Jacopin,1,3

and Nicolas Grandjean1

1Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland, 2École Polytechnique, France, 3InstitutNéel, Université Grenoble Alpes, CNRS, Grenoble INP, France

ED13 HEMTs Ohtori 3 （鳳 3） 08:30-10:30

ED13-1 (Oral) 08:30 - 08:45Multichannel In-Plane-Gate AlGaN/GaN Transistors with 2.1 S/mm transconduc-tance and 4.4 A/mm ON-current densityCatherine Erine, Jun Ma, Giovanni Santoruvo, and Elison MatioliEcole Polytechnique Federale de Lausanne(EPFL), Switzerland

ED13-2 (Oral) 08:45 - 09:00Demonstration of N-face AlN-based polarization field-effect transistorsHironori Okumura,1,2 Jori Lemettinen,3 Sami Suihkonen,3 and Tomas Palacios2

1University of Tsukuba, Japan, 2Massachusetts Institute of Technology, United States of America, 3Aalto University, Finland

ED13-3 (Oral) 09:00 - 09:15Low-leakage-current and high-interface-quality GaN-based MIS-HEMTs withHfO2/Y2O3 gate dielectricsYating Shi, Weizong Xu, Changkun Zeng, Fangfang Ren, Dong Zhou, Rong Zhang, Youdou Zheng, and Hai LuSchool of Electronic Science and Engineering, Nanjing University, China

ED13-4 (Oral) 09:15 - 09:30Gate controllability in Al2O3-gate AlGaN/GaN HEMTs grown on GaN substratesYuji Ando, Shota Kaneki, and Tamotsu HashizumeResearch Center for Integrated Quantum Electronics, Hokkaido University, Japan

ED13-5 (Oral) 09:30 - 09:45Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaNHEMT on thinned Silicon substrateLars Heuken,1 Muhammad Alshahed,1 Alessandro Ottaviani,1 Dr. Mohammed Alomari,1 Prof. Dr. MichaelHeuken,2 and Prof. Dr. Joachim N. Burghartz1

1Institute for Microelectronics Stuttgart (IMS CHIPS), Germany, 2AIXTRON SE, Germany

ED13-6 (Oral) 09:45 - 10:00Side-Gate GaN HEMTs for Pulsed Power ApplicationsMohammad Samizadeh Nikoo and Elison MatioliÉcole polytechnique fédérale de Lausanne, Switzerland

DRAFT


ED13-7 (Oral) 10:00 - 10:15p-Channel MISFET with p-GaN/AlGaN/GaN hetrostructureNadim Chowdhury,1 Kai Cheng,2 and Tomas Palacios1

1Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, United States of America,2Enkris Semiconductor Inc., China

ED13-8 (Oral) 10:15 - 10:30Enhancement-mode GaN-on-AlN p-channel HFETs with record on-currentSamuel James Bader,1 Reet Tapaskumar Chaudhuri,2 Shyam Bharadwaj,2 Austin Lee Hickman,2 Kazuki Nomoto,2

Han Wui Then,3 Huili Xing,2,4,5 and Debdeep Jena2,4,5

1School of Applied and Engineering Physics, Cornell University, United States of America, 2School of Electrical and ComputerEngineering, Cornell University, United States of America, 3Intel Corporation, United States of America, 4Department ofMaterials Science and Engineering, Cornell University, United States of America, 5Kavli Institute at Cornell, United Statesof America

J7 (GR/OD) Growth for OD II Zuiun 1 （瑞雲 1） 08:30-10:30

J7-1 (Oral) 08:30 - 08:45Synthesis of InGaN sub-micron-platelets and applications towards green and redlight emitting diodesZhaoxia Bi,1 Filip Lenrick,2 Jovana Colvin,2 Anders Gustafsson,1 Olof Hultin,1,4 Ali Nowzari,1 Taiping Lu,1 L.Reine Wallenberg,3 Rainer Timm,2 Anders Mikkelsen,2 B. Jonas Ohlsson,1 Kristian Storm,4 Bo Monemar,1 and LarsSamuelson1

1Division of Solid State Physics and NanoLund, Department of Physics, Lund University, Sweden, 2Division of SynchrotronRadiation Research and NanoLund, Department of Physics, Lund University, Sweden, 3Center for Analysis and Synthe-sis/nCHREM, Lund University, Sweden, 4RISE Acreo AB, Lund, Sweden

J7-2 (Oral) 08:45 - 09:00Growth behavior of GaN on sapphire nanomembrane and its application to micro-LEDsSeungmin Lee,1 Jongmyeong Kim,1 Daeyoung Moon,1 Daehan Choi,1 Yongjo Park,2 and Euijoon Yoon1,2,3

1Department of Materials Science and Engineering, Seoul National University, Republic of Korea, 2Energy SemiconductorResearch Center; Advanced Institutes of Convergence Technology (AICT), Republic of Korea, 3Research Institute of AdvancedMaterials & Inter-university Semiconductor Research Center, Seoul National University, Republic of Korea

J7-3 (Oral) 09:00 - 09:15Structural analysis of m-plane Ga1-xInxN/GaN multi-quantum wells grown on GaNnano-wires by using 1 -1 0 0 reflection of X-ray nano-beamTsurugi Kondo,1 Ryoma Seiki,1 Yasuhiko Imai,2 Kazushi Sumitani,2 Shigeru Kimura,2 Kenta Takagi,1 Nanami Goto,1

Daichi Imai,1 Satoshi Kamiyama,1 and Takao Miyajima1

1Meijo Univ., Japan, 2Japan Synchrotron Radiation Research Inst., Japan

DRAFT


J7-4 (Oral) 09:15 - 09:30Reduction of threading dislocation density in AlInN/GaN DBRs for GaN-basedvertical-cavity surface-emitting lasersTakanobu Akagi,1 Yugo Kozuka,2 Kazuki Ikeyama,2 Sho Iwayama,2 Masaru Kuramoto,1 Tatsuma Saito,1 TetsuyaTakeuchi,2 Satoshi Kamiyama,2 Motoki Iwaya,2 and Isamu Akasaki2,3

1R&D Laboratories, Stanley Electric Co., LTD.„ Japan, 2Faculty of Science and Technology, Meijo University, Japan, 3GraduateSchool of Engineering and Akasaki Research Center, Nagoya University, Japan

J7-5 (Oral) 09:30 - 09:45Green electroluminescence from m-plane core-shell InGaN/GaN nanowiresAkanksha Kapoor,1 Nan Guan,2 Martin Vallo,1 Agnes Messanvi,1,2 Lorenzo Mancini,2 Eric Gautier,3 CatherineBougerol,4 Bruno Gayral,1 Francois H. Julien,2 Lorenzo Rigutti,6 Maria Tchernycheva,2 Joel Eymery,5 and ChristopheDurand1

1University of Grenoble Alpes, CEA, INAC-PHELIQS, Grenoble, France, 2Center of Nanoscience and Nanotechnologies(C2N), Université Paris-Sud, Orsay, France, 3University of Grenoble Alpes, CEA, INAC-SPINTEC, Grenoble, France,4University of Grenoble Alpes, CNRS, Institut Néel, Grenoble, France, 5University of Grenoble Alpes, CEA, INAC-MEM,Grenoble, France, 6Normandie Université, GPM, UNIROUEN, CNRS, Rouen, France

J7-6 (Oral) 09:45 - 10:00High quality nitride semiconductors grown on novel ScAlMgO4 substrates and theirlight emitting diodesAkio Ueta, Hiroshi Ohno, Naoto Yanagita, Naoya Ryoki, Kentaro Miyano, Akihiko Ishibashi, and Masaki NobuokaPanasonic Corporation, Japan

J7-7 (Oral) 10:00 - 10:15Effect of different growth and surface treatment on the photoluminescence of func-tionalized GaN/GaInN heterostructure for gas sensingJassim Shahbaz, Martin Schniedereit , and Ferdinand ScholzInstitute of Optoelectronics, Ulm University , Germany

J7-8 (Oral) 10:15 - 10:30Comparison of three core/shell MQW systems on GaN wires: InGaN/GaN,GaN/InAlN and GaN/AlGaNChristophe Durand,1 Catherine Bougerol,2 Vincent Grenier,1 Jean-François Carlin,3 Raphaël Butte,3 LorenzoMancini,4 Lorenzo Rigutti,4 Bruno Gayral,1 Nicolas Grandjean,3 and Joël Eymery5

1UGA, CEA, INAC-PHELIQS, France, 2UGA, Institut Néel, France, 3EPFL, Switzerland, 4GPM, Rouen, France, 5UGA,CEA, INAC-MEM, France

ED14 Novel Electron Devices Zuiun 2 （瑞雲 2） 08:30-10:15

ED14-1 (Oral) 08:30 - 08:45Reproducible Al(Ga)N/GaN resonant tunneling diodes grown on sapphireDing Wang,1,2,3 Zhaoying Chen,2 Tao Wang,2 Liuyun Yang,2 Bowen Sheng,2 Xiangyang Shi,3 Juan Su,3 Wei Tan,3

Shiping Guo,4 Jian Zhang,3 Xinqiang Wang,2 and Bo Shen2

1Department of Engineering Physics, Tsinghua University, China, 2State Key Laboratory of Artificial Microstructure andMesoscopic Physics, School of Physics, Peking University, China, 3Microsystem and Terahertz Research Center, ChinaAcademy of Engineering Physics, China, 4Advanced Micro-Fabrication Equipment Inc, China

DRAFT


ED14-2 (Oral) 08:45 - 09:00Negative differential resistance in Al-rich AlGaN based double barrier resonanttunneling diodesShun Washiyama,1 Pramod Reddy,2 Mathew Hayden Breckenridge,1 Ji Hyun Kim,1 Qian Guo,1 Yan Guan,1 RonnyKirste,2 Seiji Mita,2 Ramon Collazo,1 and Zlatko Sitar1,2


ED14-3 (Oral) 09:00 - 09:15Effect of Doping on the Characteristics of Low-resistance GaN Homojunction TunnelDiodes with Negative Differential ResistanceEhsan Vadiee, Evan Clinton, and W. Alan DoolittleGeorgia Institute of Technology, United States of America

ED14-4 (Oral) 09:15 - 09:30Electric field manipulation of magnetization reversal in ferromagnetic (Ga,Mn)Nlayers through piezoelectromagnetic couplingDariusz Sztenkiel,1 Katarzyna Gas,1,2 Marek Foltyn,1 Grzegorz Mazur,1 Nevil Gonzalez-Szwacki,3 DetlefHommel,2,4,5 Tomasz Dietl,1,6,7 and Maciej Sawicki11Institute of Physics, Polish Academy of Sciences, Warsaw, Poland, 2Institute of Experimental Physics, University of Wro-claw, Wroclaw, Poland, 3Institute of Theoretical Physics, University of Warsaw, Warsaw, Poland, 4Polski Osrodek RozwojuTechnologii, Wroclaw, Poland, 5Institute of Low Temperature and Structure Research, PAS, Wroclaw, Poland, 6InternationalResearch Centre MagTop, Institute of Physics, Polish Academy of Sciences, Warsaw, Poland, 7WPI-Advanced Institute forMaterials Research, Tohoku University, Sendai, Japan

ED14-5 (Oral) 09:30 - 09:45Bio-Compatible High-Output Flexible III-N Thin Film Piezoelectric GeneratorJie Chen,1 Seung Kyu Oh,1 Noor Nabulsi,1 Shahab Shervin,1 Weijie Wang,1 Sara Pouladi,1 Heidi Johnson,2 andJae-Hyun Ryou1

1University of Houston, United States of America, 2Bringham Young University, United States of America

ED14-6 (Oral) 09:45 - 10:00Negative Capacitance AlGaN/GaN Heterojunction Field-Effect Transistors usingFerroelectric Phase ALD-HfO2 with 22 mV/dec Subthreshold SlopeSang-Woo Han,1 Su-Keun Eom,2 Hyun-Seop Kim,1 Kwang-Seok Seo,2 and Ho-Young Cha1

1Hongik University, Republic of Korea, 2Seoul National University, Republic of Korea

ED14-7 (Oral) 10:00 - 10:15AlN-based surface acoustic wave filters on sputtered AlN/Sapphire structureYun Zhang,1,2 Shuai Yang,1,2 Yujie Ai,1 Hongrui lv,1,2 Zhe Cheng,1 Lian Zhang,1 Lifang Jia,1 Boyu Dong,3 BaohuiZhang,3 and Junxi Wang1,2

1Institute of Semiconductors, Chinese Academy of Sciences, China, 2University of Chinese Academy of Sciences, China,3NAURA Technology Group Co., Ltd, China

ED14-8 (Oral) 10:15 - 10:30Significantly improved electrical characteristics of ‘Metal-Organic Molecular Layer-AlGaN/GaN’ Schottky barrier diodesManjari Garg,1 Tejas R. Naik,2 Ravi Pathak,1 V. Ramgopal Rao,3 and Rajendra Singh1

1Department of Physics, Indian Institute of Technology Delhi, India, 2Department of Electrical Engineering, Indian Instituteof Technology Bombay, India, 3Department of Electrical Engineering, Indian Institute of Technology Delhi, India

break 10:25 - 10:55

DRAFT


OD16 DUV LD Concert （コンサート） 10:55-12:50

OD16-1 (Invited) 10:55 - 11:20Development of Low Threshold UVC Laser DiodesZlatko Sitar,1,2 Ronny Kirste,2 Seiji Mita,2 Biplab Sarkar,1 and Ramon Collazo1

1North Carolina State University, United States of America, 2Adroit Materials, United States of America

OD16-2 (Oral) 11:20 - 11:35Efficient emission by current injection from 280 nm AlGaN deep-UV LD structuresNoritoshi Maeda, Masafumi Jo, and Hideki HirayamaRIKEN, Japan

OD16-3 (Oral) 11:35 - 11:50p-type graded AlGaN superlattices for deep-ultraviolet light-emitting diodesKazuaki Ebata, Yoshitaka Taniyasu, and Kazuhide KumakuraNTT Basic Research Laboratories, NTT Corporation, Japan

OD16-4 (Oral) 11:50 - 12:05AlGaN-based electron beam excitation UV lasers using AlGaN well layerYusuke Sakuragi,1 Yuta Kawase,1 Jyunya Ikeda,1 Shinji Yasue,1 Sho Iwayama,1 Motoaki Iwaya,1 Satoshi Kamiyama,1

Tetsuya Takeuchi,1 and Isamu Akasaki1,2

1Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan , Japan, 2Akasaki ResearchCenter, Nagoya University, Nagoya 464-8603, Japan, Japan

OD16-5 (Oral) 12:05 - 12:20AlGaN-based deep UV LEDs grown on sputtered and high temperature annealedAlN/sapphireNorman Susilo,1 Sylvia Hagedorn,2 Dominik Jaeger,3 Hideto Miyake,4 Ute Zeimer,2 Christoph Reich,1 BettinaNeuschulz,1 Luca Sulmoni,1 Martin Guttmann,1 Frank Mehnke,1 Christian Kuhn,1 Tim Wernicke,1 Markus Weyers,2

and Michael Kneissl1,2

1Institute of Solid State Physics, Technische Universität Berlin, Germany, 2Ferdinand-Braun-Institut, Leibniz-Institut fürHöchstfrequenztechnik, Germany, 3Evatec AG, Hauptstraße 1a, 9477 Trübbach, Switzerland, 4Department of Electrical andElectronic Engineering, Mie University, Japan

OD16-6 (Oral) 12:20 - 12:35AlGaN-based Ultraviolet Light-Emitting Diodes on high-temperature annealedsputtered AlN on sapphireYun Zhang,1,2 Ruxue Ni,1,2 Chang-Cheng Chuo,3 Kun Yang,4 Yujie Ai,1 Lu Zhao,1,2 Lian Zhang,1 Zhe Cheng,1 ZheLiu,1,2 and Lifang Jia1

1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China, China, 2University of Chinese Academyof Sciences, Beijing 100049, China, China, 3San’an Optoelectronics Co., Ltd., Xiamen 361009, Fujian, China, China, 4HebeiSynlight Crystal Co., Ltd., Baoding 071000, Hebei, China, China

DRAFT


OD16-7 (Oral) 12:35 - 12:50AlN molar fraction dependence of TMAH wet etching on AlGaNShinji Yasue,1 Kosuke Sato,1,2 Yuta Kawase,1 Junya Ikeda,1 Yusuke Sakuragi,1 Sho Iwayama,1 Motoaki Iwaya,1

Satoshi Kamiyama,1 Tetsuya Takeuchi,1 and Isamu Akasaki1,3

1Department of Material Science and Engineering, Meijo University, Japan, 2Asahi-Kasei Corporation, Japan, 3AkasakiResearch Center, Nagoya University, Japan

GR15 New Growth Technique Ohtori 1（鳳 1） 10:55-12:50

GR15-1 (Invited) 10:55 - 11:20Recent progress in tri-halide vapor phase epitaxy of GaN-related materialsHisashi Murakami, Nao Takekawa, Kentaro Ema, Yoshinao Kumagai, and Akinori KoukituTokyo University of Agriculture and Technology, Japan

GR15-2 (Oral) 11:20 - 11:35High temperature growth of N-polar GaN by THVPEDaisuke Oozeki,1 Nao Takekawa,1 Naoya Kawamoto,1 Akira Yamaguchi,2 Hisashi Murakami,1 Yoshinao Kumagai,1

Kou Matsumoto,2 and Akinori Koukitu1

1Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Japan, 2Taiyo Nippon Sanso Corporation,Japan

GR15-3 (Oral) 11:35 - 11:50GaN growth on the three-dimensional-shaped SCAATTM bulk seed by tri-halidevapor phase epitaxy using GaCl3Kenji Iso,1,2 Daisuke Oozeki,1 Syoma Ohtaki,1 Hisashi Murakami,1 and Akinori Koukitu1

1Tokyo University of Agriculture and Technology, Japan, 2Mitsubishi Chemical, Japan

GR15-4 (Oral) 11:50 - 12:05Influence of intermediate layers on thick InGaN growth using THVPEKentaro Ema, Rio Uei, Hisashi Murakami, and Akinori KoukituTokyo University of Agriculture and Technology, Japan

GR15-5 (Oral) 12:05 - 12:20High-rate and high-yield growth of GaN via halogen-free vapor-phase epitaxyDaisuke Nakamura and Taishi KimuraToyota Central R&D Labs., Inc., Japan

GR15-6 (Oral) 12:20 - 12:35Effect of Methane Additive on GaN Growth using OVPE MethodAkira Kitamoto,1 Masahiro Kamiyama,1 Shintaro Tsuno,1 Keiju Ishibashi,1 Yoshikazu Gunji,1 Masayuki Imanishi,1

Junichi Takino,1,2 Tomoaki Sumi,2 Yoshio Okayama,1,2 Masaki Nobuoka,2 Masashi Isemura,3 Masashi Yoshimura,1

and Yusuke Mori11Department of Engineering, Osaka University, Japan, 2Panasonic Corporation, Japan, 3Itochu Plastics Inc., Japan

DRAFT


GR15-7 (Oral) 12:35 - 12:50Development of 2-inch GaN wafer by using OVPE methodJunichi Takino,1,2 Tomoaki Sumi,1 Yoshio Okayama,1,2 Masaki Nobuoka,1 Akira Kitamoto,2 Masayuki Imanishi,2

Masashi Yoshimura,2 and Yusuke Mori21Panasonic Corporation, Japan, 2Osaka University, Japan

CR16 Electrical Properties II Ohtori 2 （鳳 2） 10:55-12:50

CR16-1 (Invited) 10:55 - 11:20Hole occupancy ratio of H1 trap in homoepitaxial n-type GaN under sub-bandgaplight irradiationKazutaka Kanegae,1 Tetsuo Narita,2 Kazuyoshi Tomita,2 Tetsu Kachi,3 Masahiro Horita,1 Tsunenobu Kimoto,1 andJun Suda1,3

1Kyoto University, Japan, 2Toyota Central R&D Labs. Inc., Japan, 3Nagoya University, Japan

CR16-2 (Oral) 11:20 - 11:35Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaNKeito Aoshima,1 Kazutaka Kanegae,2 Masahiro Horita,2 and Jun Suda1,3

1Department of Electronics, Nagoya University, Japan, 2Department of Electronic Science and Engineering, Kyoto University,Japan, 3Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Japan

CR16-3 (Oral) 11:35 - 11:50Polarization-induced 2D Hole Gas in Undoped GaN/AlN HeterostructuresReet Chaudhuri,1 Samuel Bader,2 Zhen Chen,2 David Muller,2,4 Huili Xing,1,3,4 and Debdeep Jena1,3,4

1School of Electrical and Computer Engineering, Cornell University, United States of America, 2School of Applied andEngineering Physics, Cornell University, United States of America, 3Department of Material Science and Engineering,Cornell University, United States of America, 4Kavli Institute at Cornell for Nanoscale Science, United States of America

CR16-4 (Oral) 11:50 - 12:05Evaluating the Thermal Performance of GaN HEMTs using Near Bandgap Ther-moreflectance ImagingGeorges Pavlidis, Luke Yates, Samuel H. Kim, and Samuel GrahamWoodruff School of Mechanical Engineering, Georgia Institute of Technology, United States of America

CR16-5 (Oral) 12:05 - 12:20Dynamic OFF-State Leakage Current (IOFF) in GaN Power HEMTsYuru Wang, Mengyuan Hua, Gaofei Tang, Zheyang Zheng, Song Yang, and Kevin J. ChenDepartment of Electronic and Computer Engineering, The Hong Kong University of Science and Technology„ Hong Kong

CR16-6 (Oral) 12:20 - 12:35Characterization of Self-Heating in GaN HEMTs Using Channel Resistance Mea-surementMei Wu, Meng Zhang, Qing Zhu, Ling Yang, Xiaohua Ma, and Yue HaoXidian University, China

DRAFT


CR16-7 (Oral) 12:35 - 12:50High Interfacial Ruggedness of GaN-on-Diamond for Ultra-High-Power RF De-vices: A Nano/Micro-Mechanical AssessmentDong Liu,1,3 Stephen Fabes,1 Daniel Francis,2 and Martin Kuball31University of Oxford, United Kingdom, 2Element-Six Technologies, United States of America, 3University of Bristol, UnitedKingdom

ED15 Power Devices II Ohtori 3 （鳳 3） 10:55-12:45

ED15-1 (Invited) 10:55 - 11:20Towards the limits of GaN power devices: new technologies to improve breakdownvoltage, on-resistance and thermal managementElison MatioliEcole Polytechnique Federale de Lausanne, Switzerland

ED15-2 (Oral) 11:20 - 11:35Tri-gate technologies for high-performance GaN power devicesJun Ma and Elison MatioliEcole Polytechnique Federale de Lausanne (EPFL), Switzerland

ED15-3 (Oral) 11:35 - 11:50High voltage GaN-on-silicon with low-trapping up to 1200VAlaleh Tajalli,1 Idriss Abid,2 Riad Kabouche,2 Malek Zegaoui,2 Matteo Meneghini,1 Gaudenzio Meneghesso,1 EnricoZanoni,1 Atsushi Nishikawa,3 and Farid Medjdoub2

1Department of Information Engineering, University of Padova , Italy, 2IEMN - CNRS, Institute of Electronics, Microelec-tronics and Nanotechnology, Villeneuve d’Ascq, France, 3ALLOS Semiconductors GmbH, Dresden, Germany

ED15-4 (Oral) 11:50 - 12:05High-voltage Enhancement-mode AlGaN/GaN/Si MOS-HEMTs with Non-recessedThin Barrier and High-k ZrO2 Gate DielectricHuaxing Jiang, Chak Wah Tang, and Kei May LauDepartment of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong

ED15-5 (Oral) 12:05 - 12:20Enhancement-mode AlGaN/GaN vertical trench MOS-HEMTs using an AlGaN re-grown layerKeito Kanatani, Akio Yamamoto, and Masaaki KuzuharaDepartment of Electrical and Electronic Engineering, University of Fukui, Japan

ED15-6 (Invited) 12:20 - 12:45GaN power electronics: progress in performance and reliabilityLikun Shen, Yifeng Wu, Ronard Barr, Peter Smith, and Primit ParikhTransphorm Inc., United States of America

DRAFT


GR16 InGaN Zuiun 1 （瑞雲 1） 10:55-12:55

GR16-1 (Oral) 10:55 - 11:10High-electron-mobility InN epilayers grown on silicon substrateHuapeng Liu,1 Xinqiang Wang,1,2 Zhaoying Chen,1 Xiantong Zheng,1 Ping Wang,1 Bowen Sheng,1 Tao Wang,1

Xuelin Yang,1 Fujun Xu,1 Weikun Ge,1 and Bo Shen1,2

1 School of Physics, Peking University, China, 2Collaborative Innovation Center of Quantum Matter, China

GR16-2 (Oral) 11:10 - 11:25Influence of Temperature and Plasma Gas Chemistry on Atomic Layer EpitaxialGrowth of InN on GaN Assessed with In Situ Grazing Incidence Small-Angle X-rayScatteringJeffrey Woodward,1 Samantha Rosenberg,1 Neeraj Nepal,2 Scooter Johnson,2 Christa Wagenbach,3 AlexanderKozen,1 Andrew Rowley,4 Zachary Robinson,4 David Boris,2 Scott Walton,2 Karl Ludwig,3 and Charles Eddy2

1American Society for Engineering Education, United States of America, 2U.S. Naval Research Laboratory, United Statesof America, 3Department of Physics and Division of Materials Science & Engineering, Boston University, United States ofAmerica, 4Physics Department, The College at Brockport - SUNY, United States of America

GR16-3 (Oral) 11:25 - 11:40Plasma Considerations for Growth of High In Content III-NitridesEvan Clinton, Ehsan Vadiee, Zachary Engel, Christopher Matthews, and W. Alan DoolittleGeorgia Institute of Technology, United States of America

GR16-4 (Oral) 11:40 - 11:55Impact of growth conditions on critical thickness of polar InGaN/GaN heterostruc-turesMikhail Rudinsky, Sergey Karpov, and Roman TalalaevSTR Group - Soft-Impact, Ltd., 194044 St.Petersburg, Russia

GR16-5 (Oral) 11:55 - 12:10Effect of the misorientation angle of GaN substrate on high-indium-content InGaNgrown by metalorganic vapor phase epitaxyZhibin Liu,1 Shugo Nitta,2 Yoann Robin,2 Maki Kushimoto,1 Manato Deki,2 Yoshio Honda,2 Markus Pristovsek,2

and Hiroshi Amano2

1Department of Electrical Engineering and Computer Science, Nagoya University, Japan, 2Institute of Materials and Systemsfor Sustainability, Nagoya University, Japan

GR16-6 (Oral) 12:10 - 12:25Immiscibility behind the MOVPE growth of InGaNKentaro OnabeThe University of Tokyo, Japan

GR16-7 (Oral) 12:25 - 12:40Trench defects and approaches to eliminate them in green InGaN quantum wellsfor laser diodesJianping Liu1Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science, China, 2Key Laboratory of Nanodevices andApplications, Chinese Academy of Science, China

DRAFT


GR16-8 (Oral) 12:40 - 12:55Growth evolution of GaN microrod facets and its application to white light InGaNMQW LEDLung-Hsing Hsu,1,2 Yun-Jing Li,1 Shih-Pang Chang,1 Hao-Chung Kuo,1 and Yuh-Jen Cheng2

1Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Taiwan, 2ResearchCenter for Applied Sciences, Academia Sinica, Taiwan

lunch 12:50 - 14:50

Plenary Concert （コンサート） 14:50-16:10

PL-4 (Plenary) 14:50 - 15:30GaN Power Devices: Current Status and Future ChallengesTetsuzo UedaPanasonic, Japan

PL-5 (Plenary) 15:30 - 16:10Exploring the Wavelength Limits of AlGaN-Based Deep UV LEDsMichael KneisslTechnische Universität Berlin, Germany

Wrap-up Concert （コンサート） 16:10-16:40

Closing Concert （コンサート） 16:40-17:00

DRAFT


November 12 (Mon)

MoP Poster Session 1 Koryu （交流）/ Dome （ドーム） 15:25-17:25

MoP-GR-1 (Poster)The Influence of Temperature on Morphology of GaN crystal by Liquid Phase Epi-taxial Growth in Na fluxHangfei Hao, Xi Wu, Zhenrong Li, Shiji Fan, and Zhuo XuXi’an Jiao Tong University , China

MoP-GR-2 (Poster)HVPE Growth of Free-Standing GaN WafersTroy Baker, Xiaoju Luo, and Zecheng WuEta Research Ltd., China

MoP-GR-3 (Poster)OMVPE growth of InxAl1-xN layer on different substratesPrerna Chauhan,1 Stanislav Hasenöhrl,1 Edmund Dobrocka,1 Lubomir Vanco,2 Farah Bouazzaoui,3 Filip Gucmann,4

Marie Pierre Chauvat,3 Jaroslav Kovac ,5 Marian Vesely,2 Pierre Ruterana,3 Martin Kuball,4 and Jan Kuzmik1

1Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia, 2Slovak U. of Technol., U. Sci. ParkBratislava Centr. Vazovova 5, 81243Bratislava, Slovakia, 3CIMAP, UMR 6252 CNRS, 6 Boulevard Maréchal Juin, 14050Caen, France, 4Center for Device Thermography and Reliability, University of Bristol, Bristol BS8 1TL, United Kingdom,5International laser centre, Ilkovicova 3, Bratislava, Slovakia

MoP-GR-4 (Poster)Crystalline quality improvements of AlN epilayer grown on sapphire substrates byperiodically pulsed-TMGa flowsXinjia Qiu,1 Hao Jiang,1,2 and Ze sheng Lyu1

1School of Electronics and Information Technology, Sun Yat-sen University, China, 2State Key Laboratory of OptoelectronicMaterials and Technologies, China

MoP-GR-5 (Poster)Variation of localizing potential in green InGaN/GaN MQWs by changing growthtemperatureJuras Mickevicius, Darius Dobrovolskas, Tomas Grinys, Arunas Kadys, and Gintautas TamulaitisInstitute of Photonics and Nanotechnology, Vilnius University, Lithuania

MoP-GR-6 (Poster)Two-step growth of InN using a high temperature InN buffer layerTakahiro Imai, Hiroki Yamaki, Masahiro Hemmi, Masahiro Yoshikawa, Daiki Toyama, and Toshiki MakimotoFaculty of science and engineering, Waseda University, Japan

DRAFT


MoP-GR-7 (Poster)Carrier Extraction Enhancement at InN/p-GaN Interface Heterojunction under Re-verse Bias VoltageMarek Kolenda,1 Vladimir Svrcek,2 Arunas Kadys,1 Ignas Reklaitis,1 Darius Dobrovolskas,1 Tadas Malinauskas,1

and Roland Tomasiunas1

1Institute of Photonics and Nanotechnology, Vilnius University, Lithuania, 2Research Center for Photovoltaics, NationalInstitute of Advanced Industrial Science and Technology, Japan

MoP-GR-9 (Poster)Metal organic chemical vapor deposition of AlN on graphene: insights from density-functional ab initio molecular dynamicsDavide Sangiovanni,1,2 Gueorgui Gueorguiev,2 and Anelia Kakanakova-Gueorguieva2

1ICAMS, Ruhr-Universitat Bochum, Germany, 2Department of Physics, Chemistry, and Biology (IFM) Linkoping University,Sweden

MoP-GR-10 (Poster)Influence of TMAl flow rate on Growth of AlInGaN Epilayers by MOCVDLoganathan R1,2 and Baskar K2,3

1CENCON, Hindustan Insitute of Science and Technology, India, 2Crystal Growth Centre, Anna University, India,3Manonmaniam Sundaranar University, India

MoP-GR-11 (Poster)Surface kinetics modeling: A predictive approach to growth of high crystallinequality AlN epilayersShashwat Rathkanthiwar, Anisha Kalra, Rangarajan Muralidharan, Digbijoy N. Nath, and Srinivasan RaghavanCentre for Nano Science and Engineering, Indian Institute of Science, Bangalore, India

MoP-GR-12 (Poster)Dislocation reduction in AlGaN/GaN HEMT epitaxy on Si using in-situ generatedislandsCk Choi,1 Srinivasan Kannan,2 Mihir Tungare,3 and Peter Kim4

1Infineon Technologies North America Corp., United States of America, 2Infineon Technologies North America Corp., UnitedStates of America, 3Infineon Technologies North America Corp., United States of America, 4Infineon Technologies NorthAmerica Corp., United States of America

MoP-GR-13 (Poster)Epitaxial AlN on c-plane sapphire by plasma nitridingYi-Chun Chen and Li ChangDepartment of Materials Science and Engineering, National Chiao Tung University, Taiwan

MoP-GR-14 (Poster)Preparation of high-quality AlN template by combining temperature modulationwith gradual NH3 flowJiankun Yang, Tongbo Wei, Jianchang Yan, Ruifei Duan, Junxi Wang, and Jinmin LiInstitute of semiconductor, Chinese Academy of Science, China

MoP-GR-15 (Poster)Formation of m-plane AlN on plasma-nitrided m-plane sapphireZhih-Cheng Ma, Kun-An Chiu, Lin-Lung Wei, and Li ChangDepartment of Materials Science and Engineering, National Chiao Tung University, Taiwan

DRAFT


MoP-GR-16 (Poster)Crystal Quality of AlN Film Improved by Low-Temperature Annealing at H2 andNH3 AtmosphereChun-Pin Huang,1 Kapil Gupta,2 Chuan-Pu Liu,2 and Kun-Yu Lai11Department of Optics and Photonics, National Central University, Taiwan, 2Department of Materials Science and Engineer-ing, National Cheng Kung University, Taiwan

MoP-GR-17 (Poster)A reduction in the anisotropic characteristics of semi-polar (11-22) epitaxial layersby embedded AlN/GaN multi-layer via MOCVDOmar Al-Zuhairi, Ahmad Shuhaimi Abu Bakar , Abdullah Haaziq Ahmad Makinudin, Muhammad I. M. AbdulKhudus, and Azzuliani SupangatLow Dimensional Materials Research Centre, Department of Physics, University of Malaya, Malaysia

MoP-GR-18 (Poster)Defects evolution in AlN templates on PVD-AlN/sapphire substrates by thermalannealingYuping Jia, Jianwei Ben, Xiaojuan Sun, Ke Jiang, Zhiming Shi, Henan Liu, Yong Wang, Cuihong Kai, You Wu, andDabing LiChangchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, China

MoP-GR-19 (Poster)Effects of AlN nucleation temperature on the high quality pulsed atomic-layer epi-taxy of AlN films by MOCVDMohd Nazri Bin Abd Rahman,1 Ahmad Shuhaimi Bin Abu Bakar,1 Yusnizam Bin Yusuf,2 Abdullah Fadil BinSulaiman,1 Shamsul Amir Bin Abdul Rais,2 Norzaini Binti Zainal,2 and Muhammad Imran Mustafa Bin AbdulKhudus1

1Low Dimensional Material Research Center, University of Malaya, Malaysia, 22Institute of Nano-Optoelectronics Research,University of Science Malaysia, Malaysia

MoP-GR-20 (Poster)AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-typeAlGaN emitterYun Zhang,1 Lian Zhang,1 Jianping Zeng,2 Zhe Cheng,1 Hongxi Lu,1 Hongrui Lv,1 Yujie Ai,1 and Lifang Jia1

1Institute of Semiconductors, Chinese Academy of Sciences, China, 2Microsystem and Terahertz Research Center, ChinaAcademy of Engineering Physics, China

MoP-GR-21 (Poster)Growth and characterization of porous sp2-BN films with hollow spheres underhydrogen etching effect via borazane thermal CVDXiaochuan Xia, Hongwei Liang, and Yuanpeng ChenSchool of microelectronics, Dalian University of Technology, China

MoP-GR-22 (Poster)Facile fabrication of single-crystalline GaN with meso/macroporous structure forhigh efficiency photoelectrochemical reactionTaishi Kimura, Shunsuke Sato, Keita Kataoka, Takeshi Morikawa, and Daisuke NakamuraToyota Central R&D Labs., Inc., Japan

DRAFT


MoP-GR-23 (Poster)GaN MOCVD Epitaxy Growth with TaC Coated Wafer CarrierHao Qu,1 Wei Fan,1 Ashwin Rishinaramangalam,2 Morteza Monavarian,2 Daniel Feezell,2 Sudarshan Natarajan,1

Creighton Tomek,1 Gregory Shaffer,1 and Brian Kozak1

1Momentive Performance Materials Quartz, Inc, United States of America, 2Department of Electrical Engineering, Universityof New Mexico, United States of America

MoP-GR-24 (Poster)Chemical vapor deposition synthesis of sp2-BN film on 2 inch Si substrates forbipolar resistive random access memory deviceHongwei Liang, Xiaochuan Xia, and Yuanpeng ChenSchool of Microelectronics,Dalian University of Technology, China

MoP-GR-25 (Poster)Influence of the early stages of the AlN nucleation on properties of the GaN-on-Sihigh electron mobility transistor buffer structurePetr Kostelnik,1 Tomas Novak,1 Martin Konecny,2,3 and Miroslav Kolibal2,3

1ON Semiconductor, Czech Republic, 2Central European Institute of Technology - CEITEC, Czech Republic, 3Faculty ofMechanical Engineering, Brno University of Technology, Czech Republic

MoP-GR-26 (Poster)Molecular beam epitaxial growth and characterization of GaZnON layers for pho-tocatalytic applicationsMax Kraut, Florian Pantle, Marvin Koch, and Martin StutzmannWalter Schottky Institut and Physics Department, Technische Universität München, Germany

MoP-GR-27 (Poster)Three Dimensional Strain Distribution of GaN-based Light Emitting Diodes onPatterned Sapphire SubstratesShuo-Wei Chen,1,2 Heng Li,1 Chia-Jui Chang,1 and Tien-Chang Lu1

1Department of Photonics, National Chiao Tung University, Taiwan, 2Epistar Corporation, Taiwan

MoP-GR-28 (Poster)Performance improvement of GaN-based HEMT by the control of SiNx interlayerwith varying SiH4 flowJin-Ji Dai,1 Jhen-Gang Jiang,1 Cheng-Wei Liu,1 Wen-Chung Fan,1 Hua-Chiang Wen,1 WK Chen,1 Wu-Ching Chou,1

Chi-Tsu Yuan,2 Ji-Lin Shen,2 Nguyen Dang Phu,3 Luc Huy Hoang,3 Chih-Wei Hu,4 and Rong Xuan4

1Department of Electrophysics, National Chiao Tung University, Taiwan, 2Department of Physics, Chung Yuan ChristianUniversity, Taiwan, 3Faculty of Physics, Hanoi National University of Education, Viet Nam, 4Episil-Precision Inc., Taiwan

MoP-GR-29 (Poster)Growth optimization of GaN and AlN for the application of high electron mobilitytransistorsJin-Ji Dai,1 Yuan Jyun Lee,1 Cheng-Wei Liu,1 Wen-Chung Fan,1 Hua-Chiang Wen,1 Wu-Ching Chou,1 Chi-Tsu Yuan,2

Ji-Lin Shen,2 Nguyen Dang Phu,3 Luc Huy Hoang,3 Edward Y Chang,4 Chih-Wei Hu,5 and Rong Xuan5

1Department of Electrophysics, National Chiao Tung University, Taiwan, 2Department of Physics, Chung Yuan ChristianUniversity, Taiwan, 3Faculty of Physics, Hanoi National University of Education, Viet Nam, 4Department of MaterialsScience and Engineering, National Chiao Tung University, Taiwan, 5Episil-Precision Inc., Taiwan

DRAFT


MoP-GR-30 (Poster)Theoretical investigations for growth mode of GaN thin films on AlN(0001) substrateShinnosuke Tsumuki, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, and Tomonori ItoDepartment of Physics Engineering, Mie University, Japan

MoP-GR-31 (Poster)High-Throughput Investigation of New Ternary Nitride SemiconductorsSage Bauers,1 Elisabetta Arca,1 Aaron Holder,1 Wenhao Sun,2 Gerbrand Ceder,2,3 Stephan Lany,1 and AndriyZakutayev1

1National Renewable Energy Laboratory, United States of America, 2Lawrence Berkeley National Laboratory, United Statesof America, 3University of California, Berkeley, United States of America

MoP-GR-32 (Poster)Polarity and Inversion Domains in SAG GaN on Si(111)Alexana Roshko, Matt Brubaker, Paul Blanchard, Todd Harvey, and Kris BertnessNational Institute of Standards and Technology, United States of America

MoP-GR-33 (Poster)III-nitride material growth on amorphous substrates with a graphene buffer layerMeng Liang, Yunyu Wang, Zhiqiang Liu, and XiaoYan YiResearch and Development Center for Solid State Lighting,Institute of Semiconductors, Chinese Academy of Sciences, China

MoP-GR-34 (Poster)Monte Carlo study of influence of MOVPE growth condition on carbon concentra-tion in GaN epi-layerSatoshi Yamamoto,1 Yuya Inatomi,1 Akira Kusaba,1 Pawel Kempisty,2 Kenji Shiraishi,3 and Yoshihiro Kangawa1,3,4

1Department of Aeronautics and Astronautics, Kyushu University, Japan, 2IHPP, PAS, Poland, 3IMaSS, Nagoya University,Japan, 4RIAM, Kyushu University, Japan

MoP-GR-35 (Poster)Highly crystalline GaN thin films formed by sputtering methodYuya Tsuchida,1 Masami Mesuda,1 Hideto Kuramochi,1 Tokio Takahashi,2 and Mitsuaki Shimizu2

1TOSOH corporation, Japan, 2AIST, Japan

MoP-GR-36 (Poster)Influence of Surface Nitridation and Growth Temperature on properties of GaNNanorods grown on flexible Ti foil using Laser MBERamesh Ch,1,2 P. Tyagi,1,2 G. Gupta,1,2 M. S. Kumar,1,2 and S. S. Kushvaha1,2

1Time & Frequency and Electrical & Electronic Metrology Division, CSIR- National Physical Laboratory, India, 2Academy ofScientific and Innovative Research, CSIR-NPL Campus, India

MoP-GR-37 (Poster)Controlling the growth mode of semi-polar (11-22) GaN epi-layers utilizing ammo-nia flux variation via MOCVDAbdullah Haaziq Ahmad Makinudin, Ahmad Shuhaimi Abu Bakar, Omar Al-Zuhairi, Muhammad I. M. AbdulKhudus, and Azzuliani SupangatLow Dimensional Research Center, Department of Physics, University of Malaya, Malaysia

DRAFT


MoP-GR-38 (Poster)Significantly improved surface morphology of N-polar GaN film grown on SiCsubstrate by the optimization of V/III ratioGaoqiang Deng, Yuantao Zhang, Ye Yu, Xu Han, Baolin Zhang, and Guotong DuState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, China

MoP-CR-1 (Poster)Spatially resolved cathodoluminescence on dot-like high-energy emissions nearthreading dislocations in AlGaN multiple quantum wellsSatoshi Kurai,1 Nobuto Imura,1 Li Jin,1 Hideto Miyake,2 and Yoichi Yamada1

1Yamaguchi University, Japan, 2Mie University, Japan

MoP-CR-2 (Poster)Comparative study of Ti-doping effect on AlGaN and AlNMasahiro Uemura, Nobuyuki Tatemizo, Saki Imada, Koji Nishio, and Toshiyuki IsshikiKyoto Institure of technology, Japan

MoP-CR-3 (Poster)Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x ≤ 0.4) grown bymolecular beam epitaxy.Julien Brault,1 Mathieu Leroux,1 Samuel Matta,1 Mohamed Al Khalfioui,1 Benjamin Damilano,1 Hervé Peyra,2

Sandrine Juillaguet,2 Sylvie Contreras,2 and Bernard Gil21CNRS-CRHEA, 06560 Valbonne France , France, 2CNRS-Université Montpellier 2, Laboratoire Charles Coulomb andUniversité Montpellier 2, UMR 5221, 34095 Montpellier, France, France

MoP-CR-4 (Poster)The energy structure of recombination centers in heavily doped AlxGa1-xN:Si layerswith x>0.5 grown by molecular beam epitaxyIgor Vasilievich Osinnykh,1,2 Timur Valerievich Malin,1 Denis Sergeevich Milakhin,1 and Konstantin SergeevichZhuravlev1,2

1Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Russia, 2NovosibirskState University, Russia

MoP-CR-5 (Poster)AlGaN/AlN distributed Bragg reflectors for deep ultraviolet applicationsYiren Chen, Zhiwei Zhang, Hong Jiang, Zhiming Li, Guoqing Miao, and Hang SongChangchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, China

MoP-CR-6 (Poster)Growth of GaN/GaN:Si structures on N-polar GaN bulk substrates obtained byammonothermal methodLukasz Janicki,1 Mariusz Rudzinski,2 Sebastian Zlotnik,2 Robert Kucharski,3 Marcin Zajac,3 Jaroslaw Serafinczuk,4

and Robert Kudrawiec1

11 Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Poland, 2Institute ofElectronic Materials Technology, Poland, 3AMMONO sp. z.o.o, Poland, 4Faculty of Microsystem Electronics and Photonics,Wroclaw University of Science and Technology, Poland

DRAFT


MoP-CR-7 (Poster)Band offsets and alignment in BGaN/GaN heterostructuresJuras Mickevicius,1 E.-M. Pavelescu,2,3 O. Ligor,2 Mindaugas Andrulevicius,4 Arunas Kadys,1 Roland Tomasiunas,1

C.M. Ticos,5 and Gintautas Tamulaitis1

1Institute of Photonics and Nanotechnology, Vilnius University, Lithuania, 2National Institute for Research and Developmentin Microtechnologies, Romania, 3Faculty of Exact Sciences and Engineering, Hyperion University, Romania, 4Institute ofMaterials Science, Kaunas University of Technology, Lithuania, 5National Institute for Laser, Plasma and Radiation Physics,Romania

MoP-CR-8 (Poster)Optical studies of annealed and hydrogenated p-type amorphous GaNSbAntonio Llopis, Wendy L. Sarney, Stefan P. Svensson, and Michael WrabackU.S. Army Research Laboratory, United States of America

MoP-CR-9 (Poster)Luminescence from thin βββ-Ga2O3 layer on GaN by low-energy electron excitationRyuichi Sugie, Tomoyuki Uchida, Yusaku Tanahashi, and Junichiro SameshimaToray Research Center Inc., Japan

MoP-CR-10 (Poster)Carrier Recombination Processes via Intermediate Band in GaPN Revealed by Two-Wavelength Excited PhotoluminescenceChika Negishi,1 Md Dulal Haque,1,2 Norihiko Kamata,1 Zentaro Honda,1 and Hiroyuki Yaguchi11Graduate School of Science and Engineering, Saitama University, Japan, 2Hajee Mohammad Danesh Science and TechnologyUniversity, Bangladesh

MoP-CR-11 (Poster)Enhancement and stabilization of blue photoluminescence from Eu and Si codopedAlN films formed by reactive co-sputteringKazusa Morimoto and Hiroshi KatsumataSchool of Science and Technology, Meiji University, Japan

MoP-CR-12 (Poster)Near white light emission from Eu3+ and Tm3+ co-doped GaN filmsXionghui Zeng,1 Xiaodan Wang,2 Jianfeng Wang,1 and Ke Xu1

1Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, China, 2Suzhou University of Science andTechnology, China

MoP-CR-13 (Poster)Optical and morphological characterization of GaN surface exposed by NH3 plasmaNaoto Kumagai,1,2 Hirotomo Itagaki,3 Jaeho Kim,1,2 Hisato Ogiso,3 Xue-lun Wang,1,2 Shingo Hirose,3 HajimeSakakita,1,2 and Mitsuaki Shimizu1

1GaN-OIL, AIST, Japan, 2ESPRIT, AIST, Japan, 3AMRI, AIST, Japan

MoP-CR-14 (Poster)Valence and conduction band offsets of h-BN/Al0.7Ga0.3N heterojunction determinedby x-ray photoelectron spectroscopyGuo-Dong Hao, Sachiko Tsuzuki, and Shin-ichiro InoueNational Institute of Information and Communications Technology (NICT), Japan

DRAFT


MoP-CR-15 (Poster)Origin of the composition-gradient transition layers in (AlN/AlxGa1-xN) distributedBragg reflectors: a segregation or a diffusion phenomenon?Maud Nemoz,1,2 Stephanie Rennesson,1,2 Fabrice Semond,1,2 Jesus Zuniga-Perez,1,2 Denis Lefevbre,1,2 AimericCourville,1,2 Sebastien Chenot,1,2 Xavier Lafosse,3 Sophie Bouchoule,3 and Gilles Patriarche3

1Université Côte d’Azur, France, 2Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, CNRS, France, 3Centre deNanosciences et de Nanotechnologies, CNRS, France

MoP-CR-16 (Poster)Thermal properties of GaN on polycrystalline AlN substrates for power deviceapplicationsChao Yuan,1 James W. Pomeroy,1 Michael J. Uren,1 Karen Geens,2 Steve Stoffels,2 and Martin Kuball11Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, UnitedKingdom, 2Inter-University Micro-Electronics Centre, 3001 Leuven, Belgium

MoP-CR-17 (Poster)TEM study of InGaN/AlGaN/GaN normally-offMOS HEMT structuresLajos Tóth,1 Ildikó Cora,1 Zsolt Fogarassy,1 Béla Pécz,1 Stanislav Hasenöhrl,2 Alena Seifertova,2 and Jan Kuzmik2

1Institute Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, Hungary,2Institute of Electrical Engineering, Slovak Academy of Sciences, Slovakia

MoP-CR-18 (Poster)Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/SisubstratesLok Yi Lee,1 Petr Vacek,1 Martin Frentrup,1 Menno J. Kappers,1 Rachel A. Oliver,1 and David J. Wallis1,2

1Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom, 2Centre for High FrequencyEngineering, University of Cardiff, United Kingdom

MoP-CR-19 (Poster)Impact of instrumental function on Williamson-Hall analysis of GaN layersLars Grieger and Joachim F. WoitokMalvernPanalytical B.V., Netherlands

MoP-CR-20 (Poster)Structural Characterization of GaN/AlGaN MWQ grown on conductive transparent(-201) βββ-Ga2O3 substrate for vertical UV emitting devicesIdris A. Ajia,1 Yoshihiro Yamashita,3 Kazuyuki Iizuka,3 Yoshikatsu Morishima,3 Katharina Lorenz,2 LuciaSpasevski,4 Mufasila Muhammed,1 Robert W. Martin,4 Akito Kuramata,3 and Iman S. Roqan1

1Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Saudi Arabia,2INESC-MN, IPFN, Instituto Superior Técnico, Campus Tecnológico e Nuclear, Portugal, 3Tamura Corporation and NovelCrystal Technology, Inc., Sayama, Japan, 4Department of Physics, SUPA, University of Strathclyde, United Kingdom

MoP-CR-21 (Poster)Formation of femtosecond laser induced periodic nanostructures on GaNReina Miyagawa and Osamu EryuNagoya Institute of Technology, Japan

DRAFT


MoP-CR-22 (Poster)Study of hardness and Young’s modulus of zinc-blende InxGa1-xNSergio Agustin Garcia Hernandez,1 Miguel Angel Vidal Borbolla,1 and Vicente Damian Compean Garcia2

1Coordinación para la Innovación y la Aplicación de la Ciencia y la Tecnología (CIACYT), Universidad Autónoma de SanLuis Potosí, Mexico, 2CONACyT—Coordinación para la Innovación y la Aplicación de la Ciencia y la Tecnología (CIACYT),Universidad Autónoma de San Luis Potosí, Mexico

MoP-CR-23 (Poster)Investigation of Effect of Low-Temperature Annealing and Dosage on Mg-Ion-Implanted GaN Using MOS StructureKei Uetake, Ryo Kamoshida, and Masamichi AkazawaResearch Center for Integrated Quantum Electronics, Hokkaido University, Japan

MoP-CR-24 (Poster)Improvement of SiO2/GaN Interface Characteristics by High Pressure Water VaporAnnealingMasaaki Furukawa, Mutsunori Uenuma, Ryota Ando, Yuta Fujimoto, Yasuaki Ishikawa, and Yukiharu UraokaNara Institute of Science and Technology, Japan

MoP-CR-25 (Poster)Nonradiative Recombination Centers in UV-LEDs Detected by Below-Gap Exciten-tion Light Under Current InjectionSota Shirai, Ken Matsuda, Norihiko Kamata, and Zentaro HondaGraduate School of Science and Engineering, Saitama University, Japan

MoP-CR-26 (Poster)Threshold voltage control for AlGaN/GaN Fin-HEMTs with combined technologiesMeng Zhang, Minhan Mi, Bin Hou, Mei Wu, Lixiang Chen, Ling Yang, and Xiaohua MaXIdian University, China

MoP-CR-27 (Poster)Strong Correlation among Componential, Electrical, and Optical Properties in Mg-doped GaN Rods with Axial InhomogeneitySunghan Choi, Min-Ho Choi, Hyun Gyu Song, Yang-Seok Yoo, Chulwon Lee, Kie Young Woo, and Yong-Hoon ChoDepartment of Physics, Korea Advanced Institute of Science and Technology (KAIST), Republic of Korea

MoP-CR-28 (Poster)Synchrotron radiation x-ray topography and defect selective etching analysis ofthreading dislocations in HVPE-GaNTomasz Sochacki,1 Sakari Sintonen,3 Janusz Weyher,1 and Michal Bockowski21Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2Center for Integrated Research of Future Electronics,Institute of Materials and Systems for Sustainability, Nagoya University, Japan, 3IQE, United Kingdom

MoP-CR-29 (Poster)Diffusion of Mn in gallium nitride: Experiment and modellingRafal Jakiela,1 Katarzyna Gas,1,2 Maciej Sawicki,1 and Adam Barcz3

1Institute of Physics, Polish Academy of Sciences, Warsaw, Poland, 2Institute of Experimental Physics, University of Wroclaw,Wroclaw, Poland, 3Institute of Electron Technology, Warsaw, Poland

DRAFT


MoP-CR-30 (Poster)Microstructure and influence of buffer layer on threading dislocation in (0001)AlN/sapphire grown by hydride vapor phase epitaxyXu Jun Su,1 Jun Huang,1 Jin Ping Zhang,1,2 Jian Feng Wang,1,2 and Ke Xu1

1Suzhou Institute of Nano-tech and Nano-bionics, China, 2Suzhou Nanowin Science and Technology Co., Ltd., China

MoP-CR-31 (Poster)Hole Traps in AlGaN/GaN HEMTs on Si Studied by Drain Current MCTSKazuya Tamura,1 Yutaka Tokuda,1 Subramaniam Arulkumaran,2,3 Siew Chuen Foo,3 Geok Ing Ng,3 NethajiDharmarasu,3 and Radhakrishnan K3

1Aichi Institute of Technology, Japan, 2Nagoya University, Japan, 3Nanyang Technological University, Singapore

MoP-CR-32 (Poster)First-principles calculation of carrier localization in fluctuated InGaN quantumwellsToshiyuki Kunikiyo, Shinnosuke Hattori, Raku Shirasawa, and Shigetaka TomiyaSony Corporation, Japan

MoP-CR-33 (Poster)Ab Initio Study of Substitutional Chlorine and Related Complexes in GaNGiovanni Alfieri,1 Yusuke Fujii,2 and Ruggero Micheletto2

1ABB, Switzerland, 2Department of Nanosystem Sciences, Yokohama City University , Japan

MoP-CR-34 (Poster)First-Principles Investigation of Compositional Dependence of Band Gaps inAlN/InN and InN/GaN SuperlatticesYuma Fujita,1 Yuya Hamaji,1 Takahiro Kawamura,1 Toru Akiyama,1 Yoshihiro Kangawa,2 Izabela Gorczyca,3

Tadeusz Suski,3 Malgorzata Wierzbowska,3 and Stanislaw Krukowski31Graduate School of Engineering, Mie University, Japan, 2Research Institute for Applied Mechanics, Kyushu University,Japan, 3Institute of High Pressure Physics, UNIPRESS, Poland

MoP-CR-35 (Poster)TCAD simulation of a 1 kV, 10 A GaN MISFET DeviceJeramy R. Dickerson, Robert J. Kaplar, Anna Tauke-Pedretti, Andy M. Armstrong, Mary H. Crawford, Andrew A.Allerman, and Greg W. PickrellSandia National Laboratories, United States of America

MoP-OD-1 (Poster)Improving light extraction of deep UV-LED with nano patterned sapphire substrateby nanoimprinting technologyRay Hua Horng,1 Yan Cheng Lai,2 and Dong Sing Wuu2

1National Chiao Tung University, Taiwan, 2National Chung Hsing University, Taiwan

MoP-OD-2 (Poster)Deep ultraviolet light-emitting diodes with improved performance on nanoporoustemplateLiang Zhang,1,2 Jianchang Yan,1,2 Yanan Guo,1,2 Jinmin Li,1,2 and Junxi Wang1,2

1 Institute of Semiconductors, Chinese Academy of Sciences, China, 2University of Chinese Academy of Sciences, China

DRAFT


MoP-OD-3 (Poster)Improving Light output performance of AlGaN-based ultraviolet light-emittingdiode using an ITO/Ag/ITO current spreading layerSei Young Lee,1 Young Soo Park,2 and Tae-Yeon Seong1,2

1Department of Nanophotonics, Korea University, Republic of Korea, 2Department of Materials Science and Engineering,Korea University, Republic of Korea

MoP-OD-4 (Poster)Current localization structure observed in AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN templates with macrostepsKazunobu Kojima,1 Yosuke Nagasawa,2 Akira Hirano,2 Masamichi Ipponmatsu,2 Yoshio Honda,3 HiroshiAmano,3,4,5 Isamu Akasaki,4,6 and Shigefusa F. Chichibu1,3

1IMRAM, Tohoku University, Japan, 2UV craftory Co., Ltd., Japan, 3IMaSS, Nagoya University, Japan, 4ARC, NagoyaUniversity, Japan, 5VBL, Nagoya University, Japan, 6Meijo University, Japan

MoP-OD-5 (Poster)Emission enhancement of UV-LEDs by manipulating surface morphologyKuo-Bin Hong, Shiou-Yi Kuo, and Tien-Chang LuInstitute of Electro-Optical Engineering, National Chiao Tung University, Taiwan

MoP-OD-6 (Poster)Highly-reflective photonic crystal (HR-PhC) design for increasing light- extractionefficiency (LEE) of AlGaN deep-UV LEDsJoosun Yun,1 Yukio Kashima,2 and Hideki Hirayama1

1RIKEN, Japan, 2Marubun Corporation, Japan

MoP-OD-7 (Poster)Heterostructure optimization for photodetectors and solar cellsOleg Rabinovich,2 Oleg Abdullaev,1 A. Aluyev,1 Yu. Akhmerov,1 M. Zakusov,1 N. Kourova,1 M. Menzhenny,1 A.Chelny,1 Alexander Savchuk,1,2 Viktor Murashev,1,2 Sergey Didenko,2 Marina Orlova,2 and Sergey Legotin2

1Optron, Russia, 2National University of Science and Technology “MISiS”, Russia

MoP-OD-8 (Poster)A comparative study of InGaN/GaN green LEDs grown on low-temperature GaNand sputtered AlN nucleation layersHongpo Hu, Shengjun Zhou, Hui Wan, and Ning LiCenter for Photonic and Semiconductor, Wuhan University, China

MoP-OD-9 (Poster)Magnetic-tuned PL polarization of InGaN/GaN MQWs by CoFeB ferromagnetic caplayerMingzeng Peng, Xinhe Zheng, Yingfeng He, Meiling Li, Huiyun Wei, Yunlai An, Yimeng Song, and Peng QiuBeijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics,University of Science and Technology Beijing, China

DRAFT


MoP-OD-10 (Poster)InAlN/GaN Lattice Matched Stepped-Miniband Superlattices as Efficient ElectronBlocking Layer for 450 nm Laser DiodeAvinash S. Paliwal,1,2 Kuldip Singh,1 and Manish Mathew1,2

1Council of Scientific and Industrial Research - Central Electronics Engineering Research Institute., India, 2Academy ofScientific and Innovative Research (AcSIR), Ghaziabad., India

MoP-OD-11 (Poster)Improvement of light output power of GaN-based flip-chip LEDs by using an ITOcurrent spreading layer and Ag-based reflective bonding padYongwon Lee,1 Young Soo Park,2 and Tae-Yeon Seong1,2

1Department of Nanophotonics, Korea University, Republic of Korea, 2Department of Materials Science and Engineering,Korea University, Republic of Korea

MoP-OD-12 (Poster)Optical properties and characterization of InGaN MQWs with V-pits manipulatedwith different first barriersHeng Li,1 Chia-Jui Chang,1 Li-Ren Chen,1 Kuo-Bin Hong,1 Huamao Huang ,2 and Tien-Chang Lu1

1Department of Photonics, National Chiao Tung University, Taiwan, 2Engineering Research Center for Optoelectronics ofGuangdong Province, School of Physics and Optoelectronics, South China University of Technology, China

MoP-OD-13 (Poster)Enhanced optical output power of blue light-emitting diode grown on sapphiresubstrate with patterned distributed Bragg reflectorChu-Young Cho,1 Kyung-Ho Park,1 and Seong-Ju Park2

1Electronic Devices Laboratory, Korea Advanced Nano Fab Center, Republic of Korea, 2School of Materials Science andEngineering, Gwangju Institute of Science and Technology, Republic of Korea

MoP-OD-14 (Poster)Enhancement of quantum efficiency of green InGaN quantum well by realizingstep-flow growthAiqin Tian,1,2 Jianping Liu,1,2 Liqun Zhang,1,2 Masao Ikeda,1,2 Shuming Zhang,1,2 Deyao Li,1,2 Pengyan Wen,1,2

Feng Zhang,1,2 and Hui Yang1,2

1Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, China, 2Key Laboratory of Nanodevices andApplications, Chinese Academy of Sciences, China

MoP-OD-15 (Poster)Enhanced performance of InGaN/GaN MQWs LED with ZnO:Ga transparent con-ducting layerSang-Jo Kim,1 Kwang Jae Lee,1 Semi Oh,1 Jang Hwan Han,1 Dong-Seon Lee,1,2 and Seong-Ju Park1

1School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea, 2School ofElectrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Republic of Korea

MoP-OD-16 (Poster)32 × 32 pixelated active matrix micro-LED arrays with AlGaN/GaN HFETs on SiTae Kyoung Kim,1 Moon Uk Cho,1 Jae Bong So,1 Jae Min Lee,1 Jae Hyeok Lee,1 Sung Min Cho,1 Seung Kyu Oh,1

Yu-Jung Cha,1 Taehoon Jang,2 Jaehee Cho,2 and Joon Seop Kwak1

1Department of Printed Electronics Engineering, Sunchon National University, Republic of Korea, 2Semiconductor PhysicsResearch Center, Department of Semiconductor Science and Technology, Chonbuk National University, Republic of Korea

DRAFT


MoP-OD-17 (Poster)Highly efficient micro-LED arrays on CMOS backplane for smart headlamp of ve-hiclesJae Bong So,1 Tae Kyoung Kim,1 Jae Hyeok Lee,1 Jong Hwa Choi,2 In Yeol Hong,2 Seung Hyeon Oh,2 and Joon SeopKwak1

1Department of Printed Electronics Engineering, Sunchon National University, Republic of Korea, 2Lumens Co.Ltd, Republicof Korea

MoP-OD-18 (Poster)Vertical Micro-Pyramid InGaN Light Emitting Diodes on βββ-Ga2O3 SubstrateTongbo Wei,1 Xiang Zhang,2 Jianchang Yan,3 Junxi Wang,4 and Jinmin Li51Institute of Semiconductors, Chinese Academy of Sciences, China, 2Institute of Semiconductors, Chinese Academy of Sciences,China, 3Institute of Semiconductors, Chinese Academy of Sciences, China, 4Institute of Semiconductors, Chinese Academy ofSciences, China, 5Institute of Semiconductors, Chinese Academy of Sciences, China

MoP-OD-19 (Poster)Fabrication of GaN micro-LEDs with an ultra-low-damage etching processJ. Zhu,1 T. Takahashi,1 K. Endo,2 D. Ohori,3 S. Samukawa,2,3,4 and X. L. Wang1,5

1Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Japan,2Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Japan, 3Institute ofFluid Science, Tohoku University, Japan, 4Advanced Institute for Materials Research, Tohoku University, Japan, 5GaN-OIL,National Institute of Advanced Industrial Science and Technology, Japan

MoP-OD-20 (Poster)Enhanced luminescence of blue nanopillar light emitting diode with localized sur-face plasmon by using sputter fabricated Ag nanoparticle in ionic liquidsWon-Wook Lee and In-Hwan LeeDepartment of Materials Science and Engineering, Korea University, Republic of Korea

MoP-OD-21 (Poster)Top-down fabrication of stretchable transparent nanorod InGaN/GaN light emittingdiodes planar lightingsTaehwan Kim, Kyu-Cheol Kim, and In-Hwan LeeDepartment of Materials Science and Engineering, Korea University, Republic of Korea

MoP-OD-22 (Poster)Emission enhancement from InGaN/GaN multiple quantum wells nanorods viacoupling with in-situ localized surface plasmon of Au nano-particlesJieying Xing,1 Yinsong Chen,1 Xiaobiao Han,1 Yuebo Liu,1 Yuan Ren,1 Zhisheng Wu,1,2 Yang Liu,1,2 and BaijunZhang1,2

1School of Electronics and Information Technology, Sun Yat-sen University, China, 2State Key Laboratory of OptoelectronicMaterials and Technologies, Sun Yat-sen University, China

MoP-OD-23 (Poster)Application of GaN nanowalls as Field emitter and UV detectorPrashant Tyagi,1,2 Ramesh Ch.,1,2 Sunil Singh Kushvaha,1 and M. Senthil Kumar1

1Advance Material and Devices, CSIR-National Physical Laboratory, India, 2AcSIR-Academy of Scientific & InnovativeResearch, India

DRAFT


MoP-OD-24 (Poster)Plasmonic lasing mission from green to ultraviolet based on III-nitride hybridnanostructuresBin Liu,1 Tao Tao,1 Ting Zhi,1,2 Zili Xie,1 Peng Chen,1 Hong Zhao,1 Fangfang Ren,1 Dunjun Chen,1 Youdou Zheng,1

and Rong Zhang1,3

1School of Electronic Science and Engineering, Nanjing University, China, 2College of Electronic and Optical Engineering &College of Microelectronics Nanjing University of Posts and Telecommunications, China, 3Xiamen University, China

MoP-OD-25 (Poster)Wafer scale, High Reflectivity, Conductive GaN/nanoporous GaN Based DistributedBragg ReflectorBin Wei,1 Yingkuan Han,1 Haonan Zhao,1 Bowen Sun,1 Yanhao Wang,2 Xiaokun Yang,1 Dezhong Cao,1 Lin Han,2

Zhaojun Lin,1 Hongdi Xiao,1 and Yu Zhang1

1Department of Microelectronics, Shandong University, China, 2Institute of Marine Science and technology, ShandongUniversity, China

MoP-OD-26 (Poster)Large area hybrid, self-powered UV photodetector using reduced graphene-oxideon GaNNisha Prakash,1,2 Manjri Singh,1,2 Gaurav Kumar,1,2 Arun Barvat,1,2 Kritika Anand,1,2 Prabir Pal,1,2 Surinder P.Singh,1 and Suraj P. Khanna1

1CSIR-National Physical Laboratory, India, 2Academy of Scientific and Innovative Research , India

MoP-OD-27 (Poster)Improvement of reliability of phosphor-converted white light-emitting diodes usingdynamic phosphor sedimentation methodWon Jung Kim,1,2 Sun Woo Oh,2 Hyun Ho Sung,2 Suk Bum Yoon,2 Hwan-Hee Jeong,2 June-O Song,2 and Tae-YeonSeong1

1Korea University, Republic of Korea, 2LG Innotek Co., Ltd, Republic of Korea

MoP-OD-28 (Poster)Electronic Structures of a NGa-VN complex defect in GaNMasato OdaDepartment of Applied Physics, Wakayama University, Japan

MoP-OD-29 (Poster)Strain-related degradation of GaN-based blue laser diodesPengyan Wen,1,2 Huixin Xiu,3 Shuming Zhang,1,2 Jianping Liu,1,2 Liqun Zhang,1,2 Aiqin Tian,1,2 Feng Zhang,1,2

Yang Cheng,1,2 Renlin Zhou,1,2 Ikeda Masao,1,2 and Hui Yang1,2

1Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, China, 2Suzhou Institute of Nano-Tech andNano-Bionics, Chinese Academy of Sciences, China, 3School of Materials Science and Engineering, University of Shanghaifor Science and Technology, China

MoP-OD-30 (Poster)Investigation of energy transfer between europium centers in GaN:Eu using com-bined excitation emission spectroscopyDelphine Misao Lebrun,1 Hiroaki Kogame,1 Wanxin Zhu,1 Brandon J. Mitchell,2 and Yasufumi Fujiwara1

1Graduate School of Engineering, Osaka University, Japan, 2Department of Physics, West Chester University, United Statesof America

DRAFT


MoP-OD-31 (Poster)Photoelectrochemical Hydrogen Generation by Water Splitting Using GaN withCoO as CocatalystMartin Velazquez-Rizo and Kazuhiro OhkawaElectrical Engineering, King Abdullah University of Science and Technology, Saudi Arabia

MoP-OD-32 (Poster)Fabrication and characterization of hetero-structure (GaN/Si/CeO2) on flexible sub-strateJosé Gabrile Roberto Hernandez Arteaga and Ángel Gabriel Rodríguez VázquezCoordinación para la Innovación y Aplicación de la Ciencia y la Tecnología,UASLP university, Mexico, Mexico

MoP-OD-33 (Poster)Study of photon dynamics at the outer edge of GaN-based Vertical Cavity SurfaceEmitting Laser DiodesTarni Aggarwal, Ankit Udai, Vikas Pendem, and Dipankar SahaIndian Institute of Technology, Bombay, India

MoP-OD-34 (Poster)Photoluminescence and electroluminescence of GaN nanorod LED for visible lightcommunicationJinglin Zhan,1 Zhizhong Chen,1 Qianqian Jiao,1 Yulong Feng,1 Chengcheng Li,1 Yifan Chen,1 Yiyong Chen,1 FeiJiao,1 Xiangning Kang,1 Tongjun Yu,1 Guoyi Zhang,1,2 and Bo Shen1

1school of Physics, Peking University, China, 2Dongguan Institute of Optoelectronics, Peking University, China

MoP-OD-35 (Poster)GaN/AlGaN nanocolumn UV LED using graphene as substrate and transparentelectrodeIda Marie Hoeiaas,1 Andreas Liudi Mulyo,1,2 Per Erik Vullum,3 Lyubomir Ahtapodov,1 Dong-Chul Kim,1 Bjørn-OveFimland,1 Katsumi Kishino,2 and Helge Weman1

1Dept. of Electronic Systems, NTNU, Trondheim, Norway, 2Dept. of Engineering and Applied Sciences, Sophia University,Tokyo, Japan, 3SINTEF Industry, Trondheim, Norway

MoP-OD-36 (Poster)Study of Blue-Green Light-Emitting Diode with InGaN/GaN Quantum Wells andMesh-Like ElectrodeIrina Khmyrova,1 Y. Nishidate,1 Ju. Kholopova,2 E. Polushkin,2 A. Kovalchuk,2 V. Zemlyakov,3 and S. Shapoval21University of Aizu, Japan, 2IMT RAS, Russia, 3NRUET, Russia

MoP-ED-1 (Poster)4.9 kV Breakdown Voltage Vertical GaN p-n Junction Diodes with High ReverseRecovery CapabilityHiroshi Ohta,1 Naomi Asai,1 Fumimasa Horikiri,2 Yoshinobu Narita,2 Takehiro Yoshida,2 and Tomoyoshi Mishima1

1Hosei University, Japan, 2SCIOCS, Japan

MoP-ED-2 (Poster)GaN-based Power Diodes and Normally-off HEMTs Grown on SiQian Sun, Yu Zhou, Yaozong Zhong, Junlei He, Hongwei Gao, and Hui YangSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, China

DRAFT


MoP-ED-3 (Poster)Confirmation of the Resonant Noise of GaN-HEMT Switching CircuitsKatsumi Furuya, Hiroshi Chonan, Toshihide Ide, Noriyuki Takada, and Mitsuaki ShimizuNational Institute of Advanced Industrial Science and Technology (AIST), Japan

MoP-ED-4 (Poster)Market Status and Evolution for GaN devices for power applicationsEzgi Dogmus and Hong LinYole Developpement, France

MoP-ED-5 (Poster)Analysis of Vertical GaN Junction Barrier Schottky Diode of Trench type with p+region under the Trench bottom behavior on unipolar and bipolar mode operationKeunsam Lee, Kenji Shimai, and Wonchul ChoiNihon Synopsys G.K., Japan

MoP-ED-6 (Poster)Device Design Assessment of GaN Junction Barrier Schottky DiodesYuliang Zhang and Xinbo ZouSchool of Information Science and Technology, ShanghaiTech University, China

MoP-ED-7 (Poster)Suppression of Electric Field at the Junction Sidewall of GaN PIN Avalanche Pho-todiode with Double-step MESAThu Thi Thuy Pham and Ho-Young ChaDepartment of Electronic and Electrical engineering, Hongik University, Republic of Korea

MoP-ED-8 (Poster)Performance comparison of βββ-Ga2O3 and GaN HEMTsSandeep Kumar, Anamika Singh Pratiyush, Rangarajan Muralidharan, and Digbijoy N NathCentre for Nano Science and Engineering Indian Institute of Science Bangalore 560012, India

MoP-ED-9 (Poster)High Performance Lateral AlGaN/GaN Schottky Barrier Diode with Tungsten An-odeTao Zhang, Hong Zhou, Yachao Zhang, Zhaoke Bian, Jincheng Zhang, and Yue HaoXidian University, China

MoP-ED-10 (Poster)Analysis of Breakdown Voltages of Field-Plate AlGaN/GaN HEMTs with High-kPassivation LayerToshiki Kabamura, Hideyuki Hanawa, and Kazushige HorioShibaura Institute of Technology, Japan

MoP-ED-11 (Poster)High breakdown voltage GaN quasi-vertical Schottky diode fabricated on patternedsapphire substrateZhaoke Bian, Hong Zhou, Jincheng Zhang, and Yue HaoState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University„China

DRAFT


MoP-ED-12 (Poster)Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: High-k PassivationLayer and High Acceptor Density in Buffer LayerShingo Ueda, Yuki Kawada, and Kazushige HorioShibaura Institute of Technology, Japan

MoP-ED-13 (Poster)Characterization of AlGaN/GaN MOS-HEMTs with Gate Field PlateTakashi Nishitani, Ryota Yamaguchi, Joel Tacla Asubar, Hirokuni Tokuda, and Masaaki KuzuharaUniversity of Fukui, Japan

MoP-ED-14 (Poster)Analytical Modeling of Peak Lateral Electric Field as a function of Drain Voltage ofAlGaN/GaN HEMTsSoumen Deb,1 Amitava DasGupta,2 and Nandita DasGupta3

1Ph.D Scholar, Department of Electrical Engineering, Indian Institute of Technology, Madras, Chennai, India, 2Professor,Department of Electrical Engineering, Indian Institute of Technology, Madras, Chennai, India, 3Professor, Department ofElectrical Engineering, Indian Institute of Technology, Madras, Chennai, India

MoP-ED-15 (Poster)Estimation of lateral depletion (Ldep) for III-Nitride based high electron mobilitytransistors (HEMTs) during operating conditionBhanu Bhakta Upadhyay, Yogendra Kumar Yadav, Swaroop Ganguly, and Dipankar SahaDepartment of Electrical Engineering, Indian Institute of Technology Bombay, India

MoP-ED-16 (Poster)Billion-fold reduction in screw dislocation mediated leakage current across Schottkycontacts to Al0.50Ga0.50NShashwat Rathkanthiwar, Anisha Kalra, Rangarajan Muralidharan, Digbijoy N. Nath, and Srinivasan RaghavanCentre for Nano Science and Engineering, Indian Institute of Science, Bangalore, India

MoP-ED-17 (Poster)Microstructural features leading to large vertical leakage spots in GaN-on-Si HEMTstructuresSven Besendoerfer, Elke Meissner, and Jochen FriedrichFraunhofer Institute for Integrated Systems and Device Technology (IISB), Germany

MoP-ED-18 (Poster)Effect of inductively coupled plasma reactive ion etching on performances of p-GaNgate AlGaN/GaN HEMTsYoshihiko Akazawa, Takaaki Kondo, and Naotaka IwataAdvanced Electron Devices Laboratory, Toyota Technological Institute, Japan

DRAFT


MoP-ED-19 (Poster)Enhancement of Near-Threshold Low OFF-State Breakdown Voltage in Short-Channel Gallium Nitride High Electron Mobility TransistorsPrasannanjaneyulu Bhavana,1 Amit Malik,2 and Shreepad Karmalkar1

1Department of Electrical Engineering, Indian Institute of Technology Madras, India, 2Solid State Physics Laboratory, NewDelhi, India

MoP-ED-20 (Poster)Dependency of gate electrode on the transport mechanism of p-GaN normally-offpower devicesYanfen Huang, Yawen Zhao, Liang He, Liuan Li, Lei He, and Yang LiuSun Yat-Sen University , China

MoP-ED-21 (Poster)GaN High Frequency Wireless Power Transmission with Nd-Fe-N CoilToshihide Ide, Nobuyoshi Imaoka, Kimihiro Ozaki, Mitsuaki Shimizu, and Noriyuki TakadaAdvanced Industrial Science and Technology (AIST), Japan

MoP-ED-22 (Poster)AlGaN/GaN HEMT with a step-gateKe Wei, Guoguo Liu, Yichuan Zhang, Xinhua Wang, Sen Huang, Yingkui Zheng, and Xiaojuan ChenIMECAS, China

MoP-ED-23 (Poster)Ring-Gate Reliability of p-GaN gate AlGaN/GaN High Electron Mobility Transis-torsMei Ge,1 Maria Stella Ruzzarin,2 Dunjun Chen,1 Matteo Meneghini,2 Jianjun Zhou,3 Hai Lu,1 Rong Zhang,1 Gau-denzio Meneghesso,2 and Youdou Zheng1

1School of Electronic Science and Engineering, Nanjing University, China, 2Department of Information Engineering, Uni-versity of Padua, Italy, 3Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modu, China

MoP-ED-24 (Poster)Threshold Voltage Instability in p-GaN-Gate HEMTs Due to Negative Gate BiasStressHamid Amini Moghadam,1 Xi Tang,1,2 Daniel Haasmann,1 Jisheng Han,1 Alan Iacopi,1 Baikui Li,2 and SimaDimitrijev1

1Queensland Micro- and Nanotechnology Centre, Griffith University, QLD 4111, Australia, Australia, 2College of Optoelec-tronic Engineering, Shenzhen University, Shenzhen 518060, China, China

MoP-ED-25 (Poster)C-V Investigation of AlGaN/GaN Schottky Barrier Diodes with Different RecessedAnode DepthsShao-Chi Fan Chian, Yi Nan Zhon, and Yue-ming HsinDepartment of Electrical Engineering, National Central University, Taiwan

MoP-ED-26 (Poster)Structure parameters influence on threshold voltage of normally-off p-GaN/AlGaN/GaN transistorsJozef OsvaldInstitute of Electrical Engineering SAS, Slovakia

DRAFT


MoP-ED-27 (Poster)Humidity-insensitive GaN based hydrogen sensor with water-blocking layer forhigh temperature applicationSunwoo Jung,1 Kwang Hyeon Baik,2 Fan Ren,3 Stephen Pearton,4 and Soohwan Jang5

1Dankook University, Republic of Korea, 2Hongik University, Republic of Korea, 3University of Florida, United States ofAmerica, 4University of Florida, United States of America, 5Dankook University, Republic of Korea

DRAFT


November 13 (Tue)

TuP Poster Session 2 Koryu （交流）/ Dome （ドーム） 16:45-18:45

TuP-GR-1 (Poster)Hydride vapor phase epitaxy system for bulk GaN layers depositionVladislav Voronenkov,1,2 Natalia Bochkareva,1 Maxim Virko,2 Ruslan Gorbunov,1 Andrey Zubrilov,1,2 ViktorKogotkov,2 Philippe Latyshev,2 Yuri Lelikov,1 Andrey Leonidov,2 and Yuri Shreter1,2

1Ioffe Physical-Technical Institute, Russia, 2TRINITRI-Technology LLC, Russia

TuP-GR-2 (Poster)Computational fluid dynamics simulation study of the gas flow balance in a verticalHVPE reactor with showerhead for low cost bulk GaN crystal growthQiang Liu, Naoki Fujimoto, Shugo Nitta, Yoshio Honda, and Hiroshi AmanoNagoya University, Japan

TuP-GR-3 (Poster)Growth model of van der Waals epitaxy of films: A case of AlN films on multilayergraphene/SiCYu Xu,1,2,3 Bing Cao,4,5 Zongyao Li,4,5 Demin Cai,2 Jianfeng Wang,1,2 Lin Shi,1,2 Chinhua Wang,4,5 and Ke Xu1,2

1Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China,2Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China, 3University of Chinese Academy of Sciences,Beijing 100049, China, 4College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of SuzhouNano Science and Technology, Soochow University, Suzhou 215006, China, 5Key Lab of Advanced Optical ManufacturingTechnologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, SoochowUniversity, Suzhou 215006, China

TuP-GR-4 (Poster)Heteroepitaxial Growth of Flat InGaN Single Crystalline Layers on Si(111)Mani Azadmand,1 Sergio Bietti,1 Daniel Chrastina,2 Emiliano Bonera,1 Maurizio Acciarri,1 Alexey Fedorov,3 ShiroTsukamoto,1 Richard Nötzel,4 and Stefano Sanguinetti11L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Milano, Italy, 2L-NESS and Dipartimentodi Fisica, Politecnico di Milano, Como, Italy, 3L-NESS and IFN-CNR, Milano, Italy, 4South China Normal University,Guangzhou, China

TuP-GR-5 (Poster)Raman spectroscopy of InGaN in the central composition rangeMani Azadmand,1 Emiliano Bonera,1 Sergio Bietti,1 Daniel Chrastina,2 Maurizio Acciarri,1 Alexey Fedorov,3 ShiroTsukamoto,1 Richard Nötzel,4 and Stefano Sanguinetti11L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Milano, Italy, 2L-NESS and Dipartimentodi Fisica, Politecnico di Milano, Como, Italy, 3L-NESS and IFN-CNR, Milano, Italy, 4South China Normal University,Guangzhou, China

DRAFT


TuP-GR-6 (Poster)In situ X-ray Studies of the Effect of Plasma Pulse Length on InN grown by AtomicLayer EpitaxySamantha G. Rosenberg,1 Daniel J. Pennachio,2 Christa Wagenbach,3 Virginia R. Anderson,1 Scooter D. Johnson,4

Neeraj Nepal,4 Alexander C. Kozen,1 Jeffrey Woodward,1 Zachary Robinson,5 Karl F. Ludwig,3 Chris J. Palmstrøm,2,6

and Charles R. Eddy Jr.41ASEE, residing at U.S. Naval Research Laboratory, United States of America, 2University California, Santa Barbara,Materials Dept, Santa Barbara, CA, United States of America, 3Boston University, Dept of Physics and Division of MaterialsScience & Engineering, Boston, MA, United States of America, 4U.S. Naval Research Laboratory, Washington DC, UnitedStates of America, 5SUNY Brockport, Physics Dept, Brockport, NY, United States of America, 6University California, SantaBarbara, Dept. of Electr. and Comp. Eng., Santa Barbara, CA, United States of America

TuP-GR-7 (Poster)MOCVD parameters influence on defects in InGaN/GaN heterostructuresOleg Rabinovich,2 Oleg Abdullaev,1 A. Aluyev,1 Yu. Akhmerov,1 M. Zakusov,1 N. Kourova,1 M. Menzhenny,1 A.Chelny,1 Alexander Savchuk,1,2 Viktor Murashev,1,2 Sergey Didenko,2 Marina Orlova,2 and Sergey Legotin2


TuP-GR-8 (Poster)Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processesYuri Itokazu,1,2 Shunsuke Kuwaba,1,2 Masafumi Jo,2 Norihiko Kamata,1 and Hideki Hirayama2

1Saitama University, Japan, 2RIKEN, Japan

TuP-GR-9 (Poster)Direct Growth of In-rich InGaN on Si: Influence of Surface Nitridation for Columnarand Compact Layer StructuresPeng Wang,1 Xingyu Wang,1 Hongjie Yin,1 Linyun Xie,1 Guofu Zhou,1 Stefano Sanguinetti,2 and Richard Nötzel11South China Academy of Advanced Optoelectronics, South China Normal University, China, 2L-NESS and Dip. di Scienzadei Materiali, Università di Milano-Bicocca, Italy

TuP-GR-10 (Poster)Effects of showerhead reactions on InGaN process stability: reduced Indium incor-poration and increased layer thicknessMrad Mrad, Matthew Charles, Victor Yon, Joël Kanyandekwe, Yann Mazel, Emmanuel Nolot, Pierre Ferret, AmélieDussaigne, and Guy FeuilletUniv. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France

TuP-GR-11 (Poster)Growth temperature dependence of cubic GaN step structures and cubic InN dotarrays grown on MgO (001) vicinal substratesKazumasa Okura, Kengo Takamiya, Shuhei Yagi, and Hiroyuki YaguchiGraduate School of Science and Engineering, Saitama University, Japan

TuP-GR-12 (Poster)Epitaxial growth optimization of AlGaN/GaN HEMT on 3C-SiC/SiStefano Leone, Fouad Benkhelifa, Lutz Kirste, Christian Manz, Ruediger Quay, and Oliver AmbacherFraunhofer Institute for Applied Solid State Physics (IAF), Germany

DRAFT


TuP-GR-13 (Poster)Molecular beam epitaxy of GaN and AlN on grapheneDenis Petrovich Borisenko,1 Alexander Sergeevich Gusev,1 Ivan Vladimirovich Komissarov,1,2 Nikolay IvanovichKargin,1 Maxim Mikhailovich Grekhov ,1 Vladimir Arhipovich Labunov,1,2 and Nikolay Georgievich Kovalchuk2

1Institute Of Nanoengineering In Electronics, Spintronics And Photonics, National Research Nuclear University MEPhI,Russia, 2R&D Lab 4.6 Integrated micro- and nanosystems, Belarusian State University of Informatics and Radioelectronics,Belarus

TuP-GR-14 (Poster)Non-polar AlGaN core-shell nanowire ultraviolet light-emitting diodesYong-Ho Ra, Dae-Woo Jeon, SunWoog Kim, YoungJin Lee, Mijai Lee, Jin-Ho Kim, Jonghee Hwang, and Tae YoungLimOptic & Display Material Center, Korea Institute of Ceramic Engineering & Technology, Republic of Korea

TuP-GR-15 (Poster)Formation and migration of Al atoms on AlN films from first-principles studyYong Lu and Ji-Cai ZhangBeijing University of Chemical Technology, China

TuP-GR-16 (Poster)Growth and characterization of AlGaN alloys for power electronic devices applica-tionJunShuai Xue, YongRui Fu, WeiTing Qiang, JinCheng Zhang, and Yue HaoSchool of Microelectronics, Xidian University, China

TuP-GR-17 (Poster)Control of growth mode and strain in Al-rich AlGaN in hot-wall MOCVDPitsiri Sukkaew, Hengfang Zhang, Jr-Tai Chen, and Vanya DarakchievaCenter for III-Nitride Technology C3NiT-Janzen, Department of Physics, Chemistry and Biology (IFM), Linkoping University,Sweden

TuP-GR-18 (Poster)Formation and Characterization of Ultra-thin AlN Intermediate Layer on EpitaxialGrapheneTaiji Terai, Daiki Ishimaru, Yuta Sato, Yuta Kamada, Tomoya Takeuchi, and Akihiro HashimotoGraduate School of Engineering, University of Fukui, Japan

TuP-GR-19 (Poster)Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back bar-rierSeung-Hyeon Kang, Jeong-Gil Kim, Kyung-Wan Kim, Jun-Hyeok Lee, Jeong-Min Ju, Hyeon-Su Lee, Yong-Soo Lee,and Jung-Hee LeeSchool of Electrics Engineering, Kyungpook National University, Republic of Korea

TuP-GR-20 (Poster)Fabrication of nano-amorphous graphitic carbon nitride thin film by wet processand its optical propertiesTakahiro Watanabe,1 Masaaki Hirai,2 Kenichi Takarabe,2 and Naoki Ohtani11Department of Electronics, Doshisha University, Japan, 2Department of Applied Science, Okayama University of Science,Japan

DRAFT


TuP-GR-21 (Poster)Floating-Epitaxy Growth of Nitrides on Two-Dimensional layers & Ultrafast growthof horizontal GaN nanowires by HVPEZhiqiang Liu, Meng Liang, Yunyu Wang, Xiaoyan Yi, Junxi Wang, and Jinmin Liinstitute of semiconductors, cas, China

TuP-GR-22 (Poster)Distinction and Characteristics of Growth Regimes for P-Type GaN in Plasma-Assisted MBEHaipeng Tang and Sharif SadafNational Research Council Canada, Canada

TuP-GR-23 (Poster)Mn-Doped c-Plane GaN Thin Films and Nanorods, Growth and CharacterizationsYuan-Ting Lin,1 Paritosh V. Wadekar,1 Ching-Wen Chang,1 Yu-Hung Lee,1 Ching-Feng Cheng,1 Cheng-Lin Xu,1

Hsuan-Yu Chen,1 Cha-Her Lin,1 Jia-Wei Zhang,1 Xin-Ren Yu,1 Mitch M. Chou,2 Cheng-Maw Cheng,3 Quark Y.Chen,1,4 and Li-Wei Tu1,5

1Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan,2Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Taiwan, 3National SynchrotronRadiation Research Center, Taiwan, 4Texas Center for Superconductivity and Department of Physics, University of Houston,United States of America, 5Department of Medical Laboratory Science and Biotechnology, Kaohsiung Medical University,Taiwan

TuP-GR-24 (Poster)Growth Dynamics of Nitride Semiconductors in the Presence of Metal DropletsMani Azadmand,1 Sergio Bietti,1 Daniel Chrastina,2 Emiliano Bonera,1 Murizio Acciarri,1 Alexey Fedorov,3 ShiroTsukamoto,1 Richard Notzel,4 and Stefano Sanguinetti11L-NESS and Department of Materials Science, University of Milano-Bicocca„ Italy, 2L-NESS and Department of Physics,Politecnico di Milano, Italy, 3L-NESS and IFN-CNR, Italy, 4South China Normal University, China

TuP-GR-25 (Poster)GaN on r-Al2O3 growth peculiarities by MOCVDAlexander Savchuk,1 Oleg Abdullaev,1 A. Aluyev,1 Yu. Akhmerov,1 M. Zakusov,1 N. Kourova,1 M. Menzhenny,1 A.Chelny,1 Victor Murashev,1,2 Oleg Rabinovich,2 and Sergey Didenko2


TuP-GR-26 (Poster)Effect of Substrate Temperature on the growth of ZnSnN2 thin-filmTeena Jangid and G. Mohan RaoDepartment of Instrumentation & Applied Physics, Indian Institute of Science, India

TuP-GR-27 (Poster)Correlation between Superlattice (SLs) Position on Strain and Defects of a-planeGaN grown on r-plane SapphireAnas Kamarundzaman, Ahmad Shuhaimi Abu Bakar, Omar Al-Zuhairi , Adreen Azman, Azzuliani Supangat, andAzrina TalikLow Dimensional Materials Research Centre, Department of Physics, Faculty of Science, University of Malaya, 50603 KualaLumpur, Malaysia , Malaysia

DRAFT


TuP-GR-28 (Poster)Influence of N2/H2 Plasma Irradiation to GaN Substrates for Improving the Interfaceof the Homoepitaxial GaN Grown by Radical Enhanced MOCVD (REMOCVD)Frank Wilson Amalraj,1 Arun Kumar Dhasiyan,1 Naohiro Shimizu,1 Osamu Oda,1 Nobuyuki Ikarashi,2 HirokiKondo,1 Kenji Ishikawa,1 and Masaru Hori11Graduate School of Engineering, Nagoya University, Japan, 2Institute of Materials and Systems for Sustainability, NagoyaUniversity, Japan

TuP-GR-29 (Poster)Influence of RF Plasma Power on the Homo-Epitaxial GaN Crystal Quality Grownby Radical Enhanced MOCVD (REMOCVD)Frank Wilson Amalraj, Arun Kumar Dhasiyan, Naohiro Shimizu, Osamu Oda, Hiroki Kondo, Kenji Ishikawa, andMasaru HoriGraduate School of Engineering, Nagoya University, Japan

TuP-GR-31 (Poster)Reduction of temperature-dependent RF losses for GaN-HEMTs on Silicon substrateTien Tung Luong,1 Yi Heng Chen,2 Shane Chang,1 and Edward-Yi Chang1,2

1Department of Materials Science and Engineering, National Chiao Tung University, Taiwan, 2International College ofSemiconductor Technology, National Chiao Tung University, Taiwan

TuP-GR-32 (Poster)

Comparative study of GaN grown onto on-axis and vicinal SiC (0001) substrates byhot-wall MOCVDHengfang Zhang,1,2 Ingermar Persson,1 Per Persson,1 Alyssa Mock,1 Pitsiri Sukkaew,1,2 Jr-Tai Chen,1,2,3 and VanyaDarakchieva1,2

1Department of Physics, Chemistry and Biology (IFM), Linköping Universtiy, Sweden, 2Center for III-Nitride technology,C3NiT - Janzén, Linköping University, Sweden, 3SweGaN AB, Linköping , Sweden

TuP-GR-33 (Poster)Nitrogen plasma induced intercalation of Ga during MBE growth of GaNN. Feldberg,1,3 M. Gruart,2,3 B. Daudin,2,3 H. Okuno,2,3 O. Klymov,4 N. Garro,4 and A. Cros4

1CEA, LETI, MINATEC campus, France, 2Université Grenoble Alpes, CEA, INAC, France, 3CEA, INAC-PHELIQS,LEMMA, France, 4Institute of Materials Science (ICMUV), University of Valencia, Spain

TuP-GR-34 (Poster)Mechanical exfoliation of selective-area-grown Gallium NitrideJeong-Hwan Park, Jun-Yeob Lee, Mun-Do Park, Je-Sung Lee, and Dong-Seon LeeSchool of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology(GIST), Republic ofKorea

TuP-GR-35 (Poster)Preparation of Graphitic Carbon Nitride Thin Films by Evaporating MelamineShota Minato, Katsuya Wada, and Naoki OhtaniDoshisha Univ., Japan

TuP-GR-36 (Poster)Characterization of carbon nitride thin films prepared by reactive sputteringDaiki Yoshida and Naoki OhtaniDepartment of electrical and electronic engineering, Doshisha University, Japan

DRAFT


TuP-GR-37 (Poster)Selective-Area Growth of III-Nitride Nanorods Array on Nanosphere LithographyFabricated Ti-Masked Holed Substrate by PAMBEChing-Wen Chang,1 Paritosh V. Wadekar,1 Yu-Hung Lee,1 Ching-Feng Cheng,1 Jia-Wei Zhang,1 Cheng-Lin Xu,1

Hsuan-Yu Chen,1 Cha-Her Lin,1 Hui-Chun Huang,2 Xin-Ren Yu,1 Wei-Chih Lai,3 Quark Y. Chen,1,4 and Li-Wei Tu1,5

1Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan,2Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Taiwan, 3Department of Pho-tonics, National Cheng Kung University, Taiwan, 4Texas Center of Superconductivity and Department of Physics, Universityof Houston, United States of America, 5Department of Medical Laboratory Science and Biotechnology, Kaohsiung MedicalUniversity, Taiwan

TuP-GR-38 (Poster)Cathodoluminescence studies of GaN coalescence on nanoscale patterned sapphiresubstrates by MOCVDYifan Chen,1 Zhizhong Chen,1 Junze Li,1 Shengxiang Jiang,1 Yulong Feng,1 Jinglin Zhan,1 Tongjun Yu,1 XiangningKang,1 Fei Jiao,1 Shunfeng Li,2 Guoyi Zhang,1,2 and Bo Shen1

11State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing100871, China, 22Dongguan Institute of Optoelectronics, Peking University, Dongguan, 523808, Guangdong, China

TuP-GR-39 (Poster)Behavior of GaN growth on different shape of patterned sapphire substrate at dif-ferent nucleation time.Norzaini Zainal, Muhamad Ikram Md Taib, Siti Nurul Waheeda Mohmad Zaini, Yusnizam Yusuf, and Mohd AnasAhmadInstitute of Nano Optoelectronics Research and Technology, Universiti Sains Malaysia, Malaysia

TuP-CR-1 (Poster)Temperature-dependent cathodoluminescence mapping of InGaN epitaxial layerswith different In compositionSatoshi Kurai, Ayumu Wakamatsu, and Yoichi YamadaYamaguchi University, Japan

TuP-CR-2 (Poster)Photoluminescence from zincblende InGaN/GaN quantum wellsStephen A. Church,1 Boning Ding,2 Peter W. Mitchell,1 Menno J. Kappers,2 Lok Yi Lee,2 Fabien C-P Massabuau,2

Suman-Lata Sahonta,2 Jill Shaw,3 David J. Wallis,2,4 Rachel A. Oliver,2 David J. Binks,1 and Philip Dawson1

1Photon Science Institute, School of Physics and Astronomy, University of Manchester, United Kingdom, 2Department ofMaterials Science and Metallurgy, University of Cambridge, United Kingdom, 3Anvil Semiconductors Ltd., United Kingdom,4Centre for High Frequency Engineering, University of Cardiff, United Kingdom

TuP-CR-3 (Poster)High pressure and formation of strongly dipolar excitons in coupled double In-GaN/GaN quantum wellsGrzegorz Staszczak,1 Katarzyna Pieniak,1 Marcin Siekacz,1,2 Czeslaw Skierbiszewski,1 Piotr Perlin,1,2 and TadeuszSuski11Institute of High Pressures Physics, UNIPRESS, Poland, 2TopGaN, Poland

TuP-CR-4 (Poster)Carrier localization and dynamics in gappy quantum wellsSaulius Nargelas, Kazimieras Nomeika, and Kestutis JarasiunasVilnius university, Lithuania

DRAFT


TuP-CR-5 (Poster)Anisotropy of carrier diffusion in m-plane InGaN MQWSaulius Nargelas, Kazimieras Nomeika, Lukas Jonusis, and Ramunas AleksiejunasVilnius university, Lithuania

TuP-CR-6 (Poster)Optical Properties of c-Plane Single Quantum Wells as a Function of Net ElectricFieldGeorge Christian,1 Stefan Schulz,2 Simon Hammersley,1 Menno Kappers,3 Colin Humphreys,3,4 Rachel Oliver,3 andPhilip Dawson1

1School of Physics and Astronomy, University of Manchester, United Kingdom, 2Tyndall National Institute, UniversityCollege Cork, Ireland, 3Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom, 4Schoolof Engineering and Materials Science, Queen Mary University of London, United Kingdom

TuP-CR-7 (Poster)Determination of recombination lifetimes in polar InGaN/GaN quantum wells un-der steady-state by time-resolved photoluminescenceRenlin Zhou,1,2 Masao Ikeda,1,2 Feng Zhang,2 Jianping Liu,1,2 Shuming Zhang,1,2 Aiqin Tian,2 Pengyan Wen,2 DeyaoLi,1,2 Liqun Zhang,1,2 and Hui Yang1,2

1School of Nano Technology and Nano Bionics, University of Science and Technology of China, China, 2Key Lab of Nanodevicesand Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), China

TuP-CR-8 (Poster)Thermionic emission of carriers in InGaN/(In)GaN MQWsMasao Ikeda,1,2 Feng Zhang,1,2 Renlin Zhou,1,2 Jianping Liu,1,2 Shuming Zhang,1,2 Aiqin Tian,1,2 Pengyan Wen,1,2

Liqun Zhang,1,2 Deyao Li,1,2 and Hui Yang1,2

1Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , China, 2Key Laboratory of Nanodevices andApplications, Chinese Academy of Sciences, China

TuP-CR-9 (Poster)Polarization relaxation in InGaN/(In)GaN multiple quantum wellsFeng Zhang,1,2 Masao Ikeda,1,2 Renlin Zhou,1,2 Jianping Liu,1,2 Shuming Zhang,1,2 Aiqin Tian,1,2 Pengyan Wen,1,2

Deyao Li,1,2 Liqun Zhang,1,2 and Hui Yang1,2

1Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China, 2Key Laboratory of Nanodevices andApplications, Chinese Academy of Sciences, China

TuP-CR-10 (Poster)Nanoscopic Optical Properties of InGaN/GaN Quantum Wells with V-pit UsingNear-field Scanning Optical Microscopy and Correlation AnalysisMinKwan Kim,1 Sunghan Choi,1 Joo-Hyung Lee,1 ChungHyun Park,1 Tae-Hoon Chung,2 Jong Hyeob Baek,2

Seonghun Ahn,1 and Yong-Hoon Cho1

1Department of Physics, Korea Advanced Institute of Science and Technology, Republic of Korea, 2LED Research and BusinessDivision, Korea Photonics Technology Institute, Republic of Korea

TuP-CR-11 (Poster)Photoluminescence properties related to the leakage at a forward bias for GaN-basedlight-emitting diodesJongseok Kim,1 Seungtaek Kim,1 HyungTae Kim,1 Won-Jin Choi,2 and Hyundon Jung3

1Korea institute of industrial technology, Republic of Korea, 2RayIR Co., Ltd., Republic of Korea, 3Etamax, Republic of Korea

DRAFT


TuP-CR-12 (Poster)Effect of amorphous photonic crystals on light extraction efficiency of GaN-basedlight-emitting diodes and its fabricationYiyong Chen,1 Zhizhong Chen,1 Yulong Feng,1 Chengcheng Li,1 Yifan Chen,1 Jinglin Zhan,1 Fei Jiao,1 XiangningKang,1 Tongjun Yu,1 Guoyi Zhang,1,2 and Bo Shen1

1State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China,2Dongguan Institute of Optoelectronics, Peking University, China

TuP-CR-13 (Poster)Analyses of Electronic and Atomic Structures of Insulator/GaN Interface by Photo-electron Diffraction and SpectroscopyYuta Fujimoto, Mutsunori Uenuma, hiroshi Ota, Fumihiro Matsui, Yasuaki Ishikawa, and Yukiharu UraokaNara Institute of Science and Technology, Japan

TuP-CR-14 (Poster)

Simultaneous Al- and N-polar AlN growth on 4H-SiC(0001) and (0001) substratesrespectively by metal-organic chemical vapor depositionHisashi Yoshida and Shigeya KimuraCorporate Research and Development Center, Toshiba Corporation, Japan

TuP-CR-15 (Poster)Engineering of magnetic anisotropy in ferromagnetic GaN with MnKatarzyna Gas,1,2 Dariusz Sztenkiel,1 Rajdeep Adhikari,3 Andrea Navarro-Quezada,3 Jaroslaw Z. Domagala,1 DetlefHommel,2,4,5 Alberta Bonanni,3 and Maciej Sawicki11Institute of Physics, Polish Academy of Sciences, Warsaw, Poland, 2Institute of Experimental Physics, University of Wroclaw,Wroclaw, Poland, 3Institute of Semiconductor and Solid-State Physics, Johannes Kepler University, Linz, Austria, 4PolskiOsrodek Rozwoju Technologii, Wroclaw, Poland, 5Institute of Low Temperature and Structure Research, PAS, Wroclaw, Poland

TuP-CR-16 (Poster)Structural and optical properties of InGaN/InGaN structures with extremely thinquantum wells, grown by metal-organic vapor phase epitaxyGrzegorz Staszczak,1 Ewa Grzanka,1,2 Grzegorz Targowski,1,2 Julita Smalc-Koziorowska,1,2 and Tadeusz Suski11Institute of High Pressures Physics, UNIPRESS, Poland, 2TopGaN, Poland

TuP-CR-17 (Poster)Growth and Properties of Nonpolar m-Plane GaN:Mn EpifilmsParitosh V. Wadekar,1 Ching-Wen Chang,1 Yu-Hung Lee,1 Cha-Her Lin,1 Ching-Feng Cheng,1 Cheng-Lin Xu,1

Hsuan-Yu Chen,1 Xin-Ren Yu,1 Jia-Wei Zhang,1 Wei-Chih Lai,2 Cheng-Maw Cheng,3 Quark Y. Chen,1,4 and Li-WeiTu1,5

1Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan,2Department of Photonics, National Cheng Kung University, Taiwan, 3National Synchrotron Radiation Research Center,Taiwan, 4Texas Center for Superconductivity and Department of Physics, University of Houston, United States of America,5Department of Medical Laboratory Science and Biotechnology, Kaohsiung Medical University, Taiwan

TuP-CR-18 (Poster)TEM characterization of GaAs/GaN heterointerface fabricated by surface activatedbondingShoji Yamajo, Jianbo Liang, and Naoteru ShigekawaOsaka City University, Japan

DRAFT


TuP-CR-19 (Poster)Enhanced Radial Growth of Mg doped GaN nanorodsRajendra Kumar,1 Sanjay Nayak,1 KK Nagaraja,2 and SM Shivaprasad1,2

1Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Bangaluru-560064, India, 2International Centre For Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research(JNCASR), Bangaluru-560064, India

TuP-CR-20 (Poster)γγγ- Irradiation Effects on GaN/AlGaN Hetero-structuresChandan Sharma,1,2 Ajay Kumar Visvkarma,1 Robert Laishram,1 Ashok Kapoor,1 Dipendra Singh Rawal,1 SeemaVinayak,1 and Rajendra Singh2

1MMIC Division, Solid State Physics Laboratory, Delhi, India, India, 2Department of Physics, Indian Institute of TechnologyDelhi, India, India

TuP-CR-21 (Poster)Electrical characterization of selectively grown GaN nanowiresYuya Yamamoto,1,2 Michihito Shimauchi,1,2 and Junichi Motohisa1,2

1Graduate School of Information Science and Technology, Hokkaido University, Japan, 2Research Center for IntegratedQuantum Electronics, Japan

TuP-CR-22 (Poster)Characterization of Electrical Properties of InN Epilayer using Terahertz Time-Domain Spectroscopic EllipsometryKenta Morino, Takashi Fujii, Shinichiro Mouri, Tsutomu Araki, and Yasushi NanishiRitsumeikan University, Japan

TuP-CR-23 (Poster)Impact of air annealing on performance of AlGaN/GaN MIS-HEMTs with recessedgate structuresShinsaku Kawabata, Wataru Gamachi, Joel Tacla Asubar, Hirokuni Tokuda, and Masaaki KuzuharaUniversity of Fukui, Japan

TuP-CR-24 (Poster)Ohmic contacts with Ge doped GaN regrowth in GaN HEMTsJianxing Xu, Shiyong Zhang, Penghui Zheng, Rong Wang, and Xiaodong TongMicrosystem & Terahertz Research Center, China Academy of Engineering Physics, China

TuP-CR-25 (Poster)DLTS and MCTS Studies of Traps in Hydrogen Implanted and Subsequently An-nealed n-GaNKen Iyoda,1 Jyoji Ito,2 Takahide Yagi,2 Kenji Shiojima,3 and Yutaka Tokuda1

1Aichi Institute of Technology, Japan, 2SHI-ATEX Co., Ltd., Japan, 3University of Fukui, Japan

TuP-CR-26 (Poster)Reactivation of Si-Donors in n-GaN Passivated by Plasma-Induced defects: A Roleof Defects Charge StateSeiji Nakamura and Tsugunori OkumuraDepartment of Electrical and Electronic Engineering, Tokyo Metropolitan University, Japan

DRAFT


TuP-CR-27 (Poster)Lattice-plane orientation mapping of 2-inch homo-epitaxial GaN (0001) thin filmsby grazing incident x-ray diffraction topographyJaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame,Yasuo Koide, and Osami SakataNational Institute for Materials Science, Japan

TuP-CR-28 (Poster)Vacancy defects and electrical compensation in Si and Ge doped HVPE-GaNFilip Tuomisto,1 Igor Prozheev,1 Malgorzata Iwinska,2 and Michal Bockowski21Department of Applied Physics, Aalto University, Finland, 2Institute of High Pressure Physics, Polish Academy of Sciences,Poland

TuP-CR-29 (Poster)Plastic deformation and fracture in c-plane and m-plane GaN single crystals inducedthrough micro- and nano-indentationPanagiotis Kavouras,1,2 Ingmar Ratschinski,3,4 George P. Dimitrakopulos,2 Hartmut S. Leipner,4 PhilomelaKomninou,2 Gunnar Leibiger,5 and Frank Habel51School of Chemical Engineering, National Technical University of Athens, Greece, 2Department of Physics, AristotleUniversity of Thessaloniki, Greece, 3Institut für Nichtmetallische Werkstoffe, Technische Universität Clausthal, Germany,4Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität , Germany, 5Freiberger Compound Ma-terials , Germany

TuP-CR-30 (Poster)Possibilities and challenges in the investigation of materials defects and their influ-ence on GaN devicesElke Meissner, Sven Besendoerfer, and Jochen FriedrichFraunhofer Institute for Integrated Systems and Device Technology, Germany

TuP-CR-31 (Poster)A new computational approach for structural stability and miscibility in BAlN andBGaNYuya Hasegawa, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, and Tomonori ItoDepartment of physics engneering, Mie University, Japan

TuP-CR-32 (Poster)Band alignment of wurtzite BN related alloysYuichi Ota,1 Masataka Imura,2 Ryan Ganipan Banal,2 and Yasuo Koide2

1Tokyo Metropolitan Industrial Technology Research Institute, Japan, 2National Institute for Materials Science, Japan

TuP-CR-33 (Poster)Modelling of a-Type Edge Dislocations in GaN by Computational AnalysisStefanos Giaremis,1 Philomela Komninou,1 Imad Belabbas,2 Jun Chen,3 and Joseph Kioseoglou1

1Department of Physics, Aristotle University of Thessaloniki, Greece, 2Groupe de Cristallographie et de Simulation desMatériaux, Laboratoire de Physico-Chimie des Matériaux et Catalyse, Faculté des Sciences Exactes, Université de Bejaia,Algeria, 3CIMAP-Alençon, UMR6252 CNRS-CEA-ENSICAEN, Université de Caen Basse-Normandie, France

DRAFT


TuP-CR-34 (Poster)Strains and bandgaps of short period InN/GaN and GaN/AlN superlattices usingDFT calculationsTheodoros Pavloudis, Joseph Kioseoglou, Philomela Komninou, and Theodoros KarakostasDepartment of Physics, Aristotle University of Thessaloniki, Greece

TuP-OD-1 (Poster)Efficient carrier injection in UVC AlGaN LEDs with thick p-AlGaN layersShunsuke Kuwaba,1,2 Yuri Itokazu,1,2 Masafumi Jo,1 Norihiko Kamata,2 and Hideki Hirayama1

1RIKEN, Japan, 2Saitama University, Japan

TuP-OD-2 (Poster)Demonstration of mass production techniques at feasible cost for surface mountdevice of AlGaN-based DUV-LED with fluoro-resin encapsulationYuki Hatanaka,1 Masahiro Ito,1 Yoshihiko Sakane,1 Yosuke Nagasawa,2 Akira Hirano,2 and MasamichiIppommatsu2

1AGC Inc., Japan, 2UV Craftory Co.,Ltd., Japan

TuP-OD-3 (Poster)Synthesis of multilayer graphene on aluminum nitride substrate by transfer-freedirect growth methodYong ha Choi1,2 and Jihyun Kim1,2

1Department of Nano-photonics Engineering, Korea University, Republic of Korea, 22 Department of Chemical and BiologicalEngineering, Korea University, Republic of Korea

TuP-OD-4 (Poster)UVB LED with narrow emission angle using advanced silicon-based reflector pack-age and Fresnel lensAnna Ghazaryan,1 Martin Guttmann,1 Tim Wernicke,1 Neysha Lobo Ploch,2 Tim Kolbe,2 Katrin Hilbrich,2 SteffenKnigge,2 Dennis Mitrenga,3 Indira Käpplinger,3 Thomas Ortlepp,3 Sven Einfeldt,2 and Michael Kneissl1,2

1Technische Universität Berlin, Institute of Solid State Physics, Germany, 2Ferdinand-Braun-Institut, Leibniz-Institut fürHöchstfrequenztechnik, Germany, 3CiS Forschungsinstitut für Mikrosensorik GmbH, Germany

TuP-OD-5 (Poster)Fast UV-curing encapsulation for GaN-based light emiting diodesBing Yan,1 Yong Wang,2 Tao Wang,2 Zimin Chen,1 Bingfeng Fan,1,3 Xuejin Ma,1 and Gang Wang1,3

1State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, HEMC, China, 2State KeyLaboratory of Chemical Resource Engineering, College of Science, Beijing University of Chemical Technology, China, 3FoshanInstitute of Sun Yat-sen University, China

TuP-OD-6 (Poster)Multi-layer MoS2/GaN UV-vis photodetector with observation of MoS2 band edgein spectral responsivitySwanand Solanke, Shashwat Rathkanthiwar, Anisha Kalra, Srinivasan Raghavan, Rangarajan Muralidharan, andDigbijoy N. NathCentre for Nanoscience And Engineering, Indian Institute of Science, India

DRAFT


TuP-OD-7 (Poster)UV-A detector based on gate-recessed InAlN/GaN-on-silicon HEMT stackSandeep Kumar,1 Anamika Singh Pratiyush,1 Surani B. Dolmanan,2 Sudhiranjan Tripathy,2 RangarajanMuralidharan,1 and Digbijoy N. Nath1

1Centre for Nano Science and Engineering Indian Institute of Science Bangalore 560012, India, 2Institute of Materials Researchand Engineering (IMRE), Agency for Science Technology and Research (A*STAR) Innovis 08-03, 2 FusionopoliswaySingapore1386342, Singapore

TuP-OD-8 (Poster)Optimum Number of AlGaN/AlGaN Quantum Wells for High-Efficiency Deep-Ultraviolet Light-Emitting DiodesGalih Ramadana Suwito,1 Sung Wen Huang,2 and Hao Chung Kuo2

1Nagoya University, Japan, 2National Chiao Tung University, Taiwan

TuP-OD-9 (Poster)GaN on GaN based LED with novel roughening backside of GaN substrate prior tothe LED growthNorzaini Zainal,1 Ezzah Azimah Alias,1 Muhammad Esmed Alif Samsudin,1 Norasmida Ibrahim,1 Asad JahangirMughal,2 Shuji Nakamura,2,3 Steve P. Denbaars,2,3 and James S. Speck2,3

1Institute of Nano Optoelectronics Research and Technology, Universiti Sains Malaysia, Malaysia, 2Department of Materials,University of California Santa Barbara, United States of America, 3Department of Electrical and Computer Engineering,University of California Santa Barbara, United States of America

TuP-OD-10 (Poster)The Effect of Indium Pre-Deposition on Fabrication of Deep Green Light EmittingDiodeShamsul Amir Bin Abdul Rais,1,3 Zainuriah Binti Hassan,1 Ahmad Shuhaimi Bin Abu Bakar,2 Muhammad NazriBin Abdul Rahman,2 Yusnizam Bin Yusuf,1 Muhamad Ikram Bin Md Taib,1 Abdullah Fadil Bin Sulaiman,2 HayatunNajiha Binti Hussin,2 Mohd Fairus Bin Ahmad,3,4 Yuka Akimoto,4 and Keiji Nagai41Institute of Nanoelectronics and Optoelectronics Research, Universiti Sains Malaysia , Malaysia, 2Low Dimensional MaterialResearch Center, Universiti Malaya, Malaysia, 3School of Microelectronic Engineering, Universiti Malaysia Perlis, Malaysia, 4

Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology,Japan

TuP-OD-11 (Poster)Growth of vertically conducting near ultraviolet LEDs on SiC substratesXu Han, Yuantao Zhang, Pengchong Li, Long Yan, Gaoqiang Deng, Liang Chen, Ye Yu, and Jingzhi YinState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, China

TuP-OD-12 (Poster)Structural investigation of InGaN/GaN LEDs processed by femtosecond laser lift-offSteffen Bornemann,1 Nursidik Yulianto,1,2 Tobias Meyer,3 Jan Gülink,1 Christoph Margenfeld,1 Michael Seibt,3

Hutomo Suryo Wasisto,1 and Andreas Waag1

1Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische UniversitätBraunschweig, Germany, 2Research Center for Physics, Indonesian Institute of Sciences (LIPI), Indonesia, 3IV. PhysikalischesInstitut, Georg-August-Universität Göttingen, Germany

DRAFT


TuP-OD-13 (Poster)Selective-area micromachining of InGaN/GaN LED chips using ultrashort pulselaserNursidik Yulianto,1,2 Steffen Bornemann,1 Jan Gülink,1 Lars Daul,3 Ludger Koenders,3 Andreas Waag,1 and HutomoSuryo Wasisto1

1Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische UniversitätBraunschweig, Germany, 2Research Center for Physics, Indonesian Institute of Sciences (LIPI), Indonesia, 3Physikalisch-Technische Bundesanstalt (PTB), Germany

TuP-OD-14 (Poster)Study on barrier thickness dependency of carrier transport property in InGaN/GaNMQW solar cellsHiroki Harada, Shinya Kato, Makoto Miyoshi, and Takashi EgawaNagoya institute of technology, Japan

TuP-OD-15 (Poster)Study of Zinc-Blende InGaN/GaN multiple quantum well-based LEDs with differ-ent indium contentsVicente Damian Compean Garcia,1 Ignacio Orozco Hinostroza,2 Reyna Mendez Camacho,2 Esteban CruzHernandez,2 Edgar Lopez Luna,2 and Miguel Vidal21CONACyT- Coordinación para la Innovación y Aplicación de la Ciencia y Tecnología (CIACyT), Universidad Autónomade San Luis Potosí (UASLP), Álvaro Obregón 64, San Luis Potosí, S L P 78000, México., Mexico, 2Coordinación para laInnovación y Aplicación de la Ciencia y Tecnología (CIACyT), Universidad Autónoma de San Luis Potosí (UASLP), ÁlvaroObregón 64, San Luis Potosí, S L P 78000, México., Mexico

TuP-OD-16 (Poster)Structural and optical properties of self-assembly InGaN quantum dotsXiaoli Ji, Jun Ma, Hongxi Lu, Tongbo Wei, Junxi Wang, Fuhua Yang, and Jinmin LiInstitute of Semicondutors, Chinese Academy of Sciences, China

TuP-OD-17 (Poster)Realization of Dual Color Passive-Matrix Micro-LED Arrays by Adhesive BondingSoo-Young Choi, Chang-Mo Kang, Seung-Hyun Mun, Je-Sung Lee, and Dong-Seon LeeSchool of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Republic of Korea

TuP-OD-18 (Poster)Hybrid RGB full-color LEDs integrated on a single wafer for display applicationsChang-Mo Kang,1 Seung-Hyun Mun,1 Jun-Yeob Lee,1 Soo-Young Choi,1 Je-Sung Lee,1 Jeong-Hwan Park,1 JamesKim,2 and Dong-seon Lee1

1Gwangju Institute of Science and Technology, Republic of Korea, 2Sundiode, Inc., United States of America

TuP-OD-19 (Poster)Development and Characterization of planar LED Arrays for Medical ApplicationsNatalia Habermann,1 Matthias Wachs,1 Sebastian Schulz,2 and Ulrich Theodor Schwarz1

1Chemnitz University of Technology, Germany, 2University of Leipzig Medical Center, Germany

DRAFT


TuP-OD-20 (Poster)Enhancement of Color Conversion Efficiency from Emission of GaN-based LED intoQuantum Dot Emission through Surface Plasmon CouplingChih-Chung (C. C.) Yang, Hsin-Chun Chiang, Yao-Tseng Wang, Chun-Han Lin, Wen-Yen Chang, Wai Fong Tse,Yang Kuo, and Yean-Woei KiangNational Taiwan University, Taiwan

TuP-OD-21 (Poster)Ultrathin side-emitting LEDs with ZnO nanorods using hydrothermal synthesisJae Hyeok Lee, Yu-Jung Cha, Tae Kyoung Kim, Jae Bong So, and Joon Seop KwakDepartment of Printed Electronics Engineering, Sunchon National University, Jeonnam, Republic of Korea

TuP-OD-22 (Poster)One-dimensional GaN nanostructures: preparation, characterization and photocat-alytic propertiesDefa Wang, Hong Pang, Bofan Ren, and Qingyuan LuoTianjin University, China

TuP-OD-23 (Poster)AlGaN based nano-rod UVC emitter using carbon nanotube electron beam pumpingByeongchan So,1 Sung Tae Yoo,2 Taeyoung Kim,1 Joohyoung Lee,1 Taemyung Kwak,1 Uiho Choi,1 Kyu Chang Park,2

and Okhyun Nam1

1Korea Polytechnic University, Republic of Korea, 2Kyung Hee University, Republic of Korea

TuP-OD-24 (Poster)Nanocolumns of InGaN/GaN MQWs Fabricated by Neutral Beam Etching for Di-rectional Micro-LEDK. X. Zhang,1 H. Yamada,1 N. Kumagai,1 T. Yamada,1 G. W. Cong,2 K. Endo,3 M. Shimizu,1,6 D. Ohori,4 S.Samukawa,3,4,5 and X. L. Wang1,6

1GaN-OIL, AIST, Japan, 2ESPRIT, AIST, Japan, 3NeRI, AIST, Japan, 4IFS, Tohoku University, Japan, 5AIMR, TohokuUniversity, Japan, 6IMaSS, Nagoya University, Japan

TuP-OD-25 (Poster)Using nanoporous GaN in single-photon source applicationsJohn Christopher Jarman,1 Tim J. Puchtler,2 Tong Wang,2 Claudius C. Kocher,2 Peter H. Griffin,1 Helen P. Springbett,1

Claudius C. Kocher,2 Yingjun Liu,1 Tongtong Zhu,1 Vasant Kumar,1 Mark J. Holmes,3 Robert A. Taylor,2 and RachelA. Oliver1

1Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom, 2Department of Physics,University of Oxford, United Kingdom, 3Institute of Industrial Science, University of Tokyo, Japan

TuP-OD-26 (Poster)Near-Room-Temperature Operated Single Photon Emission from Site-ControlledInGaN Quantum Dot Using Two-Photon Plasmonic NanofocusingSu-Hyun Gong, Sejeong Kim, Je-Hyung Kim, Jong-Hoi Cho, Daegwang Choi, and Yong-Hoon ChoDepartment of physics, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 34141,Republic of Korea., Republic of Korea

DRAFT


TuP-OD-27 (Poster)Heterogeneous Integration of Nitride Semiconductor Device Layer by Epitaxial FilmBondingMitsuhiko Ogihara,1 Shin Yokoyama,2 and Yoshiteru Amemiya2

1Filnex Corporation, Japan, 2Research Institute for Nanodevice and Bio Systems, Hiroshima University , Japan

TuP-OD-28 (Poster)Opto-electrical memory devices realized on AlGaN/GaN heterostructure platformXi Tang,1 Qin Zhou,1 Ran Qiu,1 Ruisheng Zheng,1 Baikui Li,1 Kevin J. Chen,2 and Jiannong Wang3

1College of Optoelectronic Engineering, Shenzhen University, China, 2Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology, Hong Kong, 3Department of Physics, The Hong Kong University ofScience and Technology, Hong Kong

TuP-OD-29 (Poster)Atomic Layer Etching of Planar Single InGaN Quantum WellCongying You,1,2 Cédric Mannequin,1 Gwénolé Jacopin,2 Thierry Chevolleau,3 Christophe Durand,4 ChristopheVallée,1,3 Henri Mariette,1,2 Masahiro Sasaki,1 and Etienne Gheeraert1,2

1University of Tsukuba, Japan, 2University of Grenoble-Alpes, Institut Néel, France, 3University of Grenoble-Alpes, LTM,Grenoble, France, 4University of Grenoble-Alpes, CEA-Grenoble, INAC/PHELIQS, France

TuP-OD-30 (Poster)Optical Manipulation of Group III-Nitride Whispering Gallery Polariton with LargeRabi SplittingHyun Gyu Song, Sunghan Choi, Chung Hyun Park, Su-Hyun Gong, Chul Won Lee, Min Sik Kwon, Dae GwangChoi, Kie Young Woo, and Yong-Hoon ChoDepartment of Physics, Korea Advanced Institute of Science and Technology, Republic of Korea

TuP-OD-31 (Poster)Comparison of different methods for optical gain spectroscopyDominic Juergen Kunzmann, Matthias Wachs, Lukas Uhlig, and Ulrich Theodor SchwarzChemnitz University of Technology, Germany

TuP-OD-32 (Poster)Longitudinal Mode Seeding in Modulated InGaN Laser DiodesMatthias Wachs, Lukas Uhlig, and Ulrich Theodor SchwarzChemnitz University of Technology, Germany

TuP-OD-33 (Poster)Patterned Y3Al5O12:Ce3+ ceramic phosphor platelets for enhanced light extractionefficiency and color uniformity of white LDsJie Yang,1,2 Zhe Liu,1 Lian Zhang,1 and Yun Zhang1

1Laboratory of Solid State Optoelectronic Information Technology, Institute of Semiconductors, Chinese Academy of Sciences,China, 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, China

TuP-OD-34 (Poster)High-performance photodetectors based on low-dimensional semiconductor nanos-tructuresXinglai Zhang, Baodan Liu, and Xin JiangInstitute of Metal Research, Chinese Academy of Sciences, China

DRAFT


TuP-OD-35 (Poster)White light emitting and bi-polar switching on Ga2O3 tunnel diodesLung-Ling Peng, Yi-Lin Ho, and Jun-Jie LinInstitute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan, R.O.C. , Taiwan

TuP-ED-1 (Poster)Effects of Annealing Time in High Pressure Water Vapor Annealing for ALD-Al2O3/GaN MOSTsubasa Nakamura, Mutsunori Uenuma, Yuta Fujimoto, Yasuaki Ishikawa, and Yukiharu UraokaNara Institute of Science and Technology, Japan

TuP-ED-2 (Poster)Improved Vth stability of Recessed-Gate AlGaN/GaN-on-Si MOS-HFETs UsingCyclic Nitrogen Incorporation into Al2O3 Gate InsulatorMyoung-Jin Kang,1 Cheol-Hee Lee,1 Su-Keun Eom,1 Hyun-Seop Kim,2 Ho-Young Cha,2 and Kwang-Seok Seo1

1Department of Electrical and Computer Engineering, Seoul National University, Republic of Korea, 2Department of Electronicand Electrical Enginnering, Hongik University, Republic of Korea

TuP-ED-3 (Poster)Comparative study of thermal decomposition of thin Ga oxide layer on GaN andAlGaN surfacesMikito Nozaki,1 Daiki Terashima,1 Takahiro Yamada,1 Akitaka Yoshigoe,2 Takuji Hosoi,1 Takayoshi Shimura,1 andHeiji Watanabe1

1Graduate School of Engineering, Osaka University, Japan, 2Japan Atomic Energy Agency, Japan

TuP-ED-4 (Poster)Improved reliability of SiO2/GaN MOS devices by controlling the oxide interlayerTakahiro Yamada,1 Daiki Terashima,1 Mikito Nozaki,1 Hisashi Yamada,2 Tokio Takahashi,2 Mitsuaki Shimizu,2

Akitaka Yoshigoe,3 Takuji Hosoi,1 Takayoshi Shimura,1 and Heiji Watanabe1

1Osaka Univ., Japan, 2AIST, Japan, 3JAEA, Japan

TuP-ED-5 (Poster)Impact of the SiO2/GaN interfacial layer to MOS-channel propertiesKatsunori Ueno,1 Hideaki Matsuyama,1 Ryo Tanaka,1 Shinya Takashima,1 Masaharu Edo,1 and KiyokazuNakagawa2

1Fuji Electric co., Japan, 2Univ. of Yamanashi, Japan

TuP-ED-6 (Poster)Threshold Voltage Hysteresis in GaN-based Vertical Trench MOSFETsShoichi Murata, Masataka Sasada, Joel Tacla Asubar, Hirokuni Tokuda, and Masaaki KuzuharaGraduate School of Engineering, University of Fukui, Japan

TuP-ED-7 (Poster)Effects of ALD-Precursor on Al2O3/GaN MOS CharacteristicsMutsunori Uenuma,1 Kiyoshi Takahashi,2 Sho Sonehara,1 Yuta Tominaga,1 Yuta Fujimoto,1 Yasuaki Ishikawa,1 andYukiharu Uraoka1

1NAIST, Japan, 2Nippon Aluminum Alkyls Ltd., Japan

DRAFT


TuP-ED-8 (Poster)InGaN/AlGaN/GaN Normally-OffMOS HEMT with Etched Access RegionDagmar Gregušová,1 Stanislav Hasenöhrl,1 Roman Stoklas,1 Stefan Hascik,1 Ondrej Pohorelec,1 Alena Seifertová,1

Michal Blaho,1 Agáta Laurencikova,1 Lajos Tóth,2 Béla Pécz,2 and Ján Kuzmík1

1Institute of Electrical Engineering Slovak Academy of Sciences, 84104 Bratislava , Slovakia, 2Research Institute for TechnicalPhysics and Materials Science, 1525 Budapest, Hungary

TuP-ED-9 (Poster)Analysis of current collapse suppression in GaN MOSFETsAya Shindome, Yosuke Kajiwara, Hiroshi Ono, Masahiko Kuraguchi, and Shinya NunoueCorporate Research & Development Center, Toshiba Corporation, Japan

TuP-ED-10 (Poster)Interface trap characterization of Al2O3/GaN MOS capacitors on GaN substratewith surface treatmentsBing Ren,1,2 Masatomo Sumiya,3 Jian Huang,2 Ke Tang,2 Meiyong Liao,3 Yasuo Koide,4 Linjun Wang,2 and LiwenSang1,4

1International Center for Material Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Japan,2School of Materials Science and Engineering, Shanghai University, China, 3Research Center for Functional Materials,National Institute for Materials Science, Japan, 4Amano-Koide Collaborative Research Lab, National Institute for MaterialsScience, Japan

TuP-ED-11 (Poster)Normally-off Recessed-gate AlGaN/GaN MOS-HFETs with Plasma EnhancedAtomic Layer Deposited AlOxNy Gate InsulatorMyoung-Jin Kang,1 Cheol-Hee Lee,1 Su-Keun Eom,1 Hyun-Seop Kim,2 Ho-Young Cha,2 and Kwang-Seok Seo1

1Department of Electrical and Computer engineering, Seoul National Univertisy, Republic of Korea, 2Department of Electronicand Electrical Engineering, Hongik University, Republic of Korea

TuP-ED-12 (Poster)Evaluation of Al 2O3/n-, p-GaN samples by photothermal deflection spectroscopyKiyotaka Fukuda,1,2 Yuya Asai,1,3 Liwen Sang,1 Akitaka Yoshigoe,4 Akira Uedono,3 Takeyoshi Onuma,2 TomohiroYamaguchi,2 Tohru Honda,2 and Masatomo Sumiya1

1National Institute for Materials Science, Japan, 2Kogakuin University, Japan, 3University of Tsukuba, Japan, 4SynchrotronX-ray Station at SPring-8, Japan

TuP-ED-13 (Poster)GdScO3 as epitaxial grown dielectric for AlGaN/GaN MISHEMTsSarah SeidelInstitut of Applied Physics, TU Freiberg, Germany

TuP-ED-14 (Poster)Low Temperature - High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaNMIS-HEMTsSrikanth Kanaga,1 Gourab Dutta,2 Bhuvnesh Kushwah,3 Nandita DasGupta,4 and Amitava DasGupta5

1Department of Electrical Engineering, Indian Institute of Technology Madras, India, 2Department of Electronics and ElectricalCommunication Engineering, Indian Institute of Technology Kharagpur, India, 3Department of Electrical Engineering, IndianInstitute of Technology Madras, India, 4Department of Electrical Engineering, Indian Institute of Technology Madras, India,5Department of Electrical Engineering, Indian Institute of Technology Madras, India

DRAFT


TuP-ED-15 (Poster)Electrical Properties of Normally-off AlGaN/GaN-on-Si Recessed MIS-FETs UsingPECVD SiON as Gate DielectricHyun-Seop Kim,1 Su-Keun Eom,2 Sang-Woo Han,1 Won-Ho Jang,1 Kwang-Seok Seo,2 and Ho-Young Cha1

1School of Electrical and Electronic Engineering, Hongik University, Republic of Korea, 2Department of Electrical andComputer Engineering, Seoul National University, Republic of Korea

TuP-ED-16 (Poster)Predicted High-Frequency and High-Power Performance of AlGaN-ChannelHEMTs for Radio-Frequency ApplicationsShahed Reza, Albert G. Baca, and Robert J. KaplarSandia National Laboratories, United States of America

TuP-ED-17 (Poster)Electron Mobility Calculation for Two-dimensional Electron Gas in InN/GaN Digi-tal Alloy Channel HEMTsTomoki Hoshino and Nobuya MoriGraduate School of Engineering, Osaka University, Japan

TuP-ED-18 (Poster)Critical examination of the surface-donor model of GaN heterostructuresEmanuel Ber, Bilal Osman, and Dan RitterDepartment of Electrical Engineering, Technion, Israel

TuP-ED-19 (Poster)Frequency dependent interface states in GaN nanowire gate-all-around FET struc-tureSiva Pratap Reddy Mallem,1 Ki-Sik Im,1 Chul-Ho Won,1 Jung-Hee Lee,1 Raphael Caulmilone,2 and SorinCristoloveanu3

1School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea , Republic of Korea, 2SOITEC,Bernin 38190, France, France, 3IMEP, Grenoble Institute of Technology, Grenoble 38016, France, France

TuP-ED-20 (Poster)DC and RF characteristic comparison of recessed-gate Normally-off GaN-basedMISHEMT fabricated using CF4-based and Cl2-based plasma gate recessing pro-cessBin Hou,1 Ling Yang,1 Qing Zhu,1 Yang Lu,2 Minhan Mi,2 Jiejie Zhu,1 Lixiang Chen,1 Fang Song,1 Meng Zhang,1

Xinchuang Zhang,1 Xiaowei Zhou,1 Xiaohua Ma,1 and Yue Hao2

1School of Advanced Materials and Nanotechnology Xidian University, China, 2Key Lab of Wide Band-Gap SemiconductorMaterials and Devices, China

TuP-ED-21 (Poster)High performance normally-off Tri-Gate AlGaN/GaN MIS-HEMT with partiallyrecessed MIS structureIlHwan Hwang,1 SuKeun Eom,1 HoYoung Cha,2 and KwangSeok Seo1

1Department of Electrical and Computer Engineering, Seoul National University, Republic of Korea, 2Department of Electronicand Electrical Engineering, Hongik University, Republic of Korea

DRAFT


TuP-ED-22 (Poster)TCAD of AlGaN/GaN HFET load pull measurementsCaram Nasser,1 Peng Luo,2 Matthias Rudolph,2 and Dan Ritter1

1Technion, Israel, 2Ferdinand-Braun-Institut, Germany

TuP-ED-23 (Poster)First RF Strained AlN/GaN/AlN Quantum Well HEMTs on 6H-SiCAustin Hickman,1 Samuel James Bader,2 Reet Chaudhuri,1 Kazuki Nomoto,1 SM Islam,1 Huili (Grace) Xing,1,3,4 andDebdeep Jena1,3,4

1School of Electrical and Computer Engineering, Cornell University, United States of America, 2School of Applied andEngineering Physics, Cornell University, United States of America, 3Department of Material Science and Engineering,Cornell University, United States of America, 4Kavli Institute at Cornell, Cornell University, United States of America

TuP-ED-24 (Poster)Material and Device Properties of GaN RF Transistors Grown on 150 mm Highly-Resistive Silicon SubstratesHady Yacoub,1 Thorsten Zweipfennig,1 Christof Mauder,2 Michael Heuken,1,2 Holger Kalisch,1 and Andrei Vescan1

1Compound Semiconductor Technology, RWTH Aachen, Germany, 2AIXTRON, SE, Herzogenrath, Germany

TuP-ED-25 (Poster)Dynamic Variation of Carrier Transport Properties of Recessed Au-free Ohmic Con-tacts to InAlN/AlN/GaN on Si-waferTakahiro Yoshida1,2 and Takashi Egawa1

1Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Japan, 2Tokai Rika Co., Ltd.,Japan

TuP-ED-26 (Poster)Improving the performance of GaN MIS HEMT devices produced in a Silicon CMOSfoundryDaniel Sherman, Sagy Levi, and David MisteleTowerJazz Semiconductors Ltd., Israel

TuP-ED-27 (Poster)Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high elec-tron mobility transistorsMaciej Matys,1 Kenya Nishiguchi ,1 Boguslawa Adamowicz,2 Jan Kuzmik,3 and Tamotsu Hashizume1

1Research Center for Integrated Quantum Electronics, Hokkaido University, Japan, 2Institute of Physics-CSE, SilesianUniversity of Technology , Poland, 3Institute of Electrical Engineering, Slovak Academy of Sciences, Slovakia

TuP-ED-28 (Poster)Device characteristics of a novel AlGaN-channel HFET employing a quaternaryAlGaInN barrier layerDaiki Hosomi, Keita Furuoka, Heng Chen, Toshiharu Kubo, Takashi Egawa, and Makoto MiyoshiNagoya Inst. of Tech., Japan

TuP-ED-29 (Poster)Excellent sub-threshold performance of MIS-Fin HEMT with m-plane sidewallchannelQuan Dai, Dong-Hyeok Son, Ryun-Hwi Kim, Jeong-Gil Kim, Terirama Thingujam, and Jung-Hee . LeeSchool of Electronics Engineering, Kyungpook NAtional University, Republic of Korea

DRAFT


TuP-ED-30 (Poster)Metal stack for sharp edge acuity and low contact resistance with high scalabilityfor AlGaN/GaN HEMTsYogendra Kumar Yadav, Bhanu Bhakta Upadhyay, Mudassar Meer, Navneet Bhardwaj, Swaroop Ganguly, andDipankar SahaDepartment of Electrical Engineering, IIT Bombay, India

TuP-ED-31 (Poster)Optimization of number of fingers and finger length for AlGaN/GaN RF HEMTsJaya Jha, Akhil Kumar, Sreenadh Surapaneni, Swaroop Ganguly, and Dipankar SahaDepartment of Electrical Engineering, IIT Bombay, India

TuP-ED-32 (Poster)Development of bulk GaN via-holes backside process and its implementation inhigh frequency AlGaN/GaN high electron mobility transistors technologyMarek Ekielski,1 Andrzej Taube,1 Maciej Kaminski,1 Maciej Kozubal,1 Wojciech Wojtasiak,2 Pawel Prystawko,3 andAnna Piotrowska1

1Institute of Electron Technology, Poland, 2Institute of Radioelectronics and Multimedia Technlogy, Warsaw University ofTechnology, Poland, 3Institute of High Pressure Physics, Polish Academy of Sciences, Poland

TuP-ED-33 (Poster)Current Collapse Behavior under High and Low Voltage Operation in E-mode GaNBased HEMTs with Gate Field PlatesYueh Ting Chen, Wei Ren Lin, and Jian Jang HuangNational Taiwan University, Taiwan

TuP-ED-34 (Poster)Analysis for non-radiative recombination loss in InGaN and InGaAsN solar cellsfor multi-junction applicationsMasafumi Yamaguchi, Kan-Hua Lee, Kenji Araki, Nobuaki Kojima, and Yoshio OhshitaToyota Technological Institute, Japan

DRAFT


November 15 (Thu)

ThP Poster Session 3 Koryu （交流）/ Dome （ドーム） 16:30-18:30

ThP-GR-1 (Poster)Rapid Wafering of Wide Bandgap SubstratesJohn Farah,1 Sinisa Mesarovic,2 Kilian Wasmer,3 Juan Jimenez,4 and Michael Dudley5

1OptiCOMP Networks, United States of America, 2School of Mechanical and Materials Engineering, Washington StateUniversity, United States of America, 3Laboratory for Advanced Materials Processing EMPA, Switzerland, 4GdS Optronlab,Universidad de Valladolid, Spain, 5Department of Materials Science, Stony Brook University, United States of America

ThP-GR-2 (Poster)Possibility of GaN crystallization by a method like HP-HT Diamond growthBogdan Sadovyi,1 Petro Sadovyi,1 Igor Dziecielewski,1 Sylwester Porowski,1 Igor Petrusha,2 Volodymyr Turkevich,2

Andrii Nikolenko,3 Bogdan Tsykaniuk,3 Viktor V. Strelchuk,3 and Izabella Grzegory1

1Institute of High Pressure Physics, Polish Academy of Sciences, Poland, 2V. Bakul Institute for Superhard Materials of theNational Academy of Sciences of Ukraine, Ukraine, 3Lashkaryov Institute of Semiconductor Physics, National Academy ofSciences of Ukraine, Ukraine

ThP-GR-3 (Poster)Establishing conditions for crystal growth of GaN from Fe-Ga-N solution under N2pressure up to 2 GPaPetro Sadovyi,1 Bogdan Sadovyi,1 Igor Dziecielewski,1 Sylwester Porowski,1 Igor Petrusha,2 Volodymyr Turkevich,2

Andrii Nikolenko,3 Bogdan Tsykaniuk,3 Viktor V. Strelchuk,3 and Izabella Grzegory1

1Institute of High Pressure Physics, Polish Academy of Sciences, Poland, 2V. Bakul Institute for Superhard Materials of theNational Academy of Sciences of Ukraine, Ukraine, 33V. Lashkaryov Institute of Semiconductor Physics, National Academyof Sciences of Ukraine, prospekt Nauky 45, 03028 Kyiv, Ukraine, Ukraine

ThP-GR-4 (Poster)Growth and impurity study of GaN single crystal grown by ammonothermal methodGuoqiang Ren, Xujun Su, Tengkun Li, Zongliang Liu, Zixiang Yan, Xiaodong Gao, and Ke XuSuzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences , China

ThP-GR-5 (Poster)The effect of NH3 partial pressure on GaN growth via Tri-halide vapor phase epitaxyusing solid source GaCl3Nao Takekawa, Mayuko Kobayashi, Machi Takahashi, and Hisashi MurakamiTokyo University of Agriculture and Technology, Japan

ThP-GR-6 (Poster)Synthesis of ZnSnN2 crystal via metathesis reaction under high-pressure and anevaluation of properties of ZnSnN2Fumio Kawamura,1 Xiang Cao,2 Naoomi Yamada,2 and Takashi Taniguchi11National Institute for Materials Science (NIMS), Japan, 2Chubu university, Japan

DRAFT


ThP-GR-7 (Poster)Origin of lattice bowing of GaN and its improvement using symmetric SiO2 hexag-onal patterns in HVPE growthSatoru Fujimoto, Hideyuki Itakura, Narihito Okada, and Kazuyuki TadatomoGraduate School of Science & Technology for innovation, Yamaguchi University, Japan

ThP-GR-8 (Poster)Preparation of high-quality thick AlN layer on sputtered and annealed nano-pattered sapphire substrates by hydride vapor-phase epitaxyShiyu Xiao,1 Nan Jiang,2 Shojiki Kanako,2 Kenjiro Uesugi,3 Harumasa Yoshida,3 and Hideto Miyake1,2

1Graduate School of RIS, Mie University , Japan, 2Graduate School of engineering, Mie University, Japan, 3OPRI, MieUniversity, Japan

ThP-GR-9 (Poster)On Apparent Absence of “Green Gap” in InGaN/Al(Ga)N Quantum Wells/DotsGrown by Plasma-Assisted MBESharif Md Sadaf and Haipeng TangNational Research Council, Canada

ThP-GR-10 (Poster)Growth of GaN nanowire and GaInN/GaN multi-quantum shell (MQS) grown bymetal-organic vapor phase epitaxyNaoki Sone,1,3 Nanami Goto,3 Mizuki Terazawa,3 Hideki Murakami,3 Kyohei Nokimura,3 Minoru Takebayashi,3

Atsushi Suzuki,3 Kazuyoshi Iida,2,3 Masaki Ohya,2,3 Motoaki Iwaya,3 Tetsuya Takeuchi,3 Satoshi Kamiyama,3 andIsamu Akasaki3,4

1KOITO MANUFACTURING Co., Ltd„ Japan, 2TOYODA GOSEI Co., Ltd„ Japan, 3Meijo University, Japan, 4AkasakiResearch Center, Nagoya University, Japan

ThP-GR-11 (Poster)InN transistors prepared on glass substrates with AlN buffer layersMasumi Sakamoto,1 Atsushi Kobayashi,1 Kohei Ueno,1 and Hiroshi Fujioka1,2

1Institute of Industrial Science, The University of Tokyo, Japan, 2JST-ACCEL, Japan

ThP-GR-12 (Poster)Modification of underlying layers to improve quantum efficiency in green light-emitting diodesSeiji Ishimoto,1 Dong-Pyo Han,1 Kengo Yamamoto,1 Ryoya Mano,1 Satoshi Kamiyama,1 Tetsuya Takeuchi,1 MotoakiIwaya,1 and Isamu Akasaki1,2

1Meijo University, Japan, 2Akasaki Research Center, Nagoya University, Japan

ThP-GR-13 (Poster)Effects of crystal defects on the electrical and transport properties of InNAlexandros Georgakilas,1,2 Adam Adikimenakis,1,2 Eirini Foundoulaki Salhin,1 Christos Zervos,1,2 GeorgiosDoundoulakis,1,2 Katerina Tsagaraki,2 Maria Androulidaki,2 and Jan Kuzmik3

1Department of Physics, University of Crete, 71203 Heraklion , Greece, 2Microelectronics Research Group (MRG), IESL,FORTH, P.O. Box 1385, 71110 Heraklion , Greece, 3Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravskacesta 9, 841 04 Bratislava , Slovakia

DRAFT


ThP-GR-14 (Poster)Green InGaN-GaN Multiple Quantum Wells on SiliconBenjamin A. Reeves,1 Ze Zhang,1 Dong Lee,2 Michael Brundmann,3 Xiaoqing Xu,1 Arun Majumdar,1 and Bruce M.Clemens1

1Stanford University, United States of America, 2QMAT, Inc, United States of America, 3Google X, United States of America

ThP-GR-15 (Poster)Low In content InGaN capping layer suppressing In desorption from InGaN/GaNQuantum WellsAlice Hospodková,1 Tomás Hubácek,1 Nikoletta Florini,2 Jiri Oswald,1 Karla Kuldová,1 Jirí Pangrác,1 MarkétaZíková,1 František Hájek,1 and Philomela Komninou2

1Institute of Physics CAS, v. v. i., Czech Republic, 2Department of Physics, Aristotle University of Thessaloniki, Greece

ThP-GR-16 (Poster)Synthesis and characterization of quaternary AlInGaN nanostructure by EDTA com-plex route using Chemical Vapour DepositionBalaji Manavaimaran,1 Kuppulingam Boopathi ,2 and Baskar Krishnan3

1Department of Energy, University of Madras, Chennai, Tamil Nadu, India, 2Crystal Growth Centre, Anna University,Chennai, Tamil Nadu, India, 3Manonmaniam Sundaranar University, Tirunelveli, Tamil Nadu, India

ThP-GR-17 (Poster)AlGaN/GaN HEMT heterostructures on high temperature AlN grown by ammoniaMBEAhmed Y. Alyamani,1 Evgenii V. Lutsenko,2 Mikalai V. Rzheutski,2 Aliaksei G. Vainilovich,2 Illia E. Svitsiankou,2

Varvara A. Shulenkov,2 Gennadii P. Yablonskii,2 Stanislav I. Petrov,3 and Alexey N. Alexeev3

1KACST, National Nanotechnology Center, Saudi Arabia, 2Institute of Physics of NAS of Belarus, Belarus, 3SemiTEq JSC,27 Engels Ave, Russia

ThP-GR-18 (Poster)Significance of Cr on mechanical and optical properties of a-axis oriented Al1-xCrxNthin filmsPadmalochan Panda and R. RamaseshanMaterials Science Group, Indira Gandhi Centre for Atomic Research, HBNI, India

ThP-GR-19 (Poster)Study of buried defects in GaN/AlN films grown by molecular beam epitaxy onSiliconYvon Cordier, Rémi Comyn, Olivier Tottereau, Eric Frayssinet, Marc Portail, and Maud NemozUniversité Côte d’Azur, CNRS, CRHEA, France

ThP-GR-20 (Poster)High Temperature Annealing of AlN on 6-inch Sapphire by Annealing FurnaceCapable of Processing Multiple SubstratesYuji Tomita,1 Akira Mishima,2 Yuya Yamaoka,1 Yoshiki Yano,1 Toshiya Tabuchi,1 Koh Matsumoto,1 and HidetoMiyake3

1Taiyo Nippon Sanso Corporation, Japan, 2TNCSE LTD., Japan, 3Graduate School of Regional Innovation Studies, MieUniversity, Japan

DRAFT


ThP-GR-21 (Poster)Direct growth of AlxGa1-xN(x-13% -60%) nanowire on sapphire substrate by PlasmaAssisted Molecular Beam Epitaxy (PA-MBE).RITAM SARKAR,1 Swagata Bhunia,2 Dhiman Nag,1 Krista R. Khiangte,2 and Apurba Laha1

1Department of Electrical Engineering , Indian Institute of Technology Bombay, India, 2Department of Physics , IndianInstitute of Technology Bombay, India

ThP-GR-22 (Poster)Positioned-controlled growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxyA. Mazid Munshi,1 Dong-Chul Kim,1 Carl Philip Heimdal,1 Martin Heilmann,2 Silke H. Christiansen,2,3 Per ErikVullum,4 Antonius T.J. van Helvoort,5 and Helge Weman1,6

1CrayoNano AS, Norway, 2Max Planck Institute for the Science of Light, Germany, 3Helmholtz Centre Berlin for Materials andEnergy, Germany, 4SINTEF Industry, Norway, 5Department of Physics, Norwegian University of Science and Technology,Norway, 6Department of Electronic Systems, Norwegian University of Science and Technology, Norway

ThP-GR-23 (Poster)p-Type Doping of Cubic GaN by MagnesiumVicente Damian Compean Garcia,1 Esteban Cruz Hernandez,2 Angel Gabriel Rodriguez,2 Edgar Lopez Luna,2 andMiguel Vidal21CONACyT- Coordinación para la Innovación y Aplicación de la Ciencia y Tecnología (CIACyT), Universidad Autónomade San Luis Potosí (UASLP), Álvaro Obregón 64, San Luis Potosí, S L P 78000, México, Mexico, 2Coordinación para laInnovación y Aplicación de la Ciencia y Tecnología (CIACyT), Universidad Autónoma de San Luis Potosí (UASLP), ÁlvaroObregón 64, San Luis Potosí, S L P 78000, México, Mexico

ThP-GR-24 (Poster)Growth and Interface Structural Characterization of MOCVD GaN on h-BNJaewon Kim,1 Nam Han,1 Hokyeong Jeong,1 Dong Yeong Kim,1 Seokho Moon,1 Kyung Song,2 Gi-Yeop Kim,1

Si-Young Choi,1 and Jong Kyu Kim1

1Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Republic ofKorea, 2Materials Modeling and Characterization Department, Korea Institute of Materials Science (KIMS), Republic of Korea

ThP-GR-25 (Poster)GaN deposition on anodized metal templateJonny Tot,1 Robert Dubreuil,1 Dimiter Alexandrov,1 Boriana Tzaneva,2 Svetozar Andreev,2 and Valentin Videkov2

1Lakehead University, Canada, 2Technical University of Sofia, Bulgaria

ThP-GR-26 (Poster)GaN Growth on Ceramics by Low Temperature RP-MOCVDRobert Dubreuil, Jonny Tot, and Dimiter AlexandrovLakehead University, Canada

ThP-GR-27 (Poster)Magneto-optical characterization of GaN/TbN superlattice structures grown by PA-MBESanshiro Fujimori and Shigehiko HasegawaDivision of Electrical, Electronic and Information Engineering, Osaka University, Japan

DRAFT


ThP-GR-28 (Poster)First-principles analysis of oxygen adsorption on kinked GaN(0001) surfaceHiroki Takeda,1 Takahiro Kawamura,1,2 Akira Kitamoto,2 Masayuki Imanishi,2 Masashi Yoshimura,2 Yusuke Mori,2

Yoshitada Morikawa,2 Yoshihiro Kangawa,3 and Koichi Kakimoto3

1Graduate School of Engineering, Mie University, Japan, 2Graduate School of Engineering, Osaka University, Japan, 3ResearchInstitute for Applied Mechanics, Kyushu University, Japan

ThP-GR-29 (Poster)Effect of magnetic barrier layer thickness on magnetic properties in mag-netic/nonmagnetic GdN/GaN superlattices grown by PA-MBETakurou Kojima and Shigehiko HasegawaDivision of Electrical, Electronic and Information Engineering, Osaka University, Japan

ThP-GR-30 (Poster)Growth of large-scale h-BN film and the Optical Property InvestigationJing Li,1 Bingjie Mo,1 Jun Yin,1 Duanjun Cai,2 and Junyong Kang2

1Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China, China, 2 Collaborative Innovation Center forOptoelectronic Semiconductors and Efficient Device, Department of Physics, Xiamen University, Xiamen, Fujian 361005,China, China

ThP-GR-31 (Poster)First-Principle Study of Nitrogen substitution on the GaN Surface in Metal OrganicVapor Phase EpitaxyKieu My Bui,1,2 Jun-Ichi Iwata,3,4 Yoshihiro Kangawa,1,5 Kenji Shiraishi,1 Yasuteru Shigeta,2 and AtsushiOshiyama1,3

1Institute of Materials and Systems for Sustainability, Nagoya University, Japan, 2Center for Computational Science, Uni-versity of Tsukuba, Japan, 3Department of Applied Physics, The University of Tokyo, Japan, 4AdvanceSoft Corporation, Japan,5Research Institute for Applied Mechanics, Kyushu University, Japan

ThP-GR-32 (Poster)Large-area GaN/MoS2 heterostructure growth using metalorganic chemical vapordepositionTaemyung Kwak, Juhun Lee, Byeoungchan So, Uiho Choi, and Okhyun NamDepartment of Nano-Optical Engineering, Korea Polytechnic University, Republic of Korea

ThP-GR-33 (Poster)Multiphysics simulation of GaN MOVPE: Flow influence on GaN growth-orientationSubaru Komura,1 Kento Kawakami,1 Akira Kusaba,2 Katsunori Yoshimatsu,1,3 Naoya Okamoto,1 YoshihiroKangawa,2,3,4 Koichi Kakimoto,2,4 and Kenji Shiraishi1,3

1Graduate School of Engineering, Nagoya University, Japan, 2Department of Aeronautics and Astronautics, Kyushu Univer-sity, Japan, 3Institute of Materials and Systems for Sustainability, Nagoya University, Japan, 4Research Institute for AppliedMechanics, Kyushu University, Japan

DRAFT


ThP-GR-34 (Poster)A Proposal and Experimental Results of a Novel MOVPE for Low-TemperatureGrowth of GaN thin filmsWangyang Yu,1,2 Yi Luo,1,2 Jian Wang,1,2 Jiadong Yu,1,2 Zixuan Zhang,1,2 Xiang Li,1,2 Lai Wang,1,2 Zhi biao Hao,1,2

Yanjun Han,1,2 Changzheng Sun,1,2 Bing Xiong,1,2 and Hongtao Li1,2

1Beijing National Research Center for Information Science and Technology, China, 2Department of Electronic Engineering,Tsinghua University, China

ThP-GR-35 (Poster)Polarity of self-induced GaN nanowires on Si(111) studied by Kelvin Probe Mi-croscopy: influence of Si substrate preparationMarta Sobanska,1 Núria Garro,2 Kamil Klosek,1 Ana Cros,2 and Zbigniew R. Zytkiewicz1

1Institute of Physics of Polish Academy of Sciences, Poland, 2Insitute of Materials Science (ICMUV), University of Valencia,Spain

ThP-GR-36 (Poster)Influence of arsenic incorporation on the band structure of GaN(As)Detlef Hommel,1,2,3 Milosz Grodzicki,1 Jean-Pierre Rousset,1 Paulina Ciechanowicz,1,2 Edyta Piskorska-Hommel,1,3

Ewelina Zdanowicz,1,4 and Robert Kudrawiec1,4

1Wroclaw Research Centre EIT+, Poland, 2University of Wroclaw, Poland, 3Institute of Low Temperature Physics andStructural Research, Poland, 4Wroclaw University of Science and Technology, Poland

ThP-GR-37 (Poster)Growth and characterization of GaN nanocolumns grown on graphene using a thinAlN buffer layerAndreas Liudi Mulyo,1,2 Mohana Krishnappa Rajpalke,1 Haruhiko Kuroe,2 Per-Erik Vullum,3 Helge Weman,1

Bjørn-Ove Fimland,1 and Katsumi Kishino2,4

1Department of Electronic Systems, Norwegian University of Science and Technology, Norway, 2Department of Engineeringand Applied Sciences, Sophia University, Japan, 3SINTEF Industry, Norway, 4Sophia Nanotechnology Research Center,Sophia University, Japan

ThP-GR-38 (Poster)Advanced epilayer designs in GaN-on-Si and GaN-on-SiC technology for RF andmm-wave applicationsMarianne Germain , Stefan Degroote , Roland Püsche, Domenica Visalli, and Joff DerluynEpiGaN nv , Belgium

ThP-CR-1 (Poster)Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shellmicrorodsWei Liu,1 Georg Rossbach,2 Adrian Avramescu,2 Tilman Schimpke,2 Hans-Jürgen Lugauer,2 Martin Strassburg,2

Christian Mounir,3 Ulrich T. Schwarz,4 Benon̂t Deveaud,1,5 and Gwénolé Jacopin1,6

1Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland, 2OSRAM Opto Semiconductors GmbH,Germany, 3Department of Microsystems Engineering (IMTEK), University of Freiburg, Germany, 4Institute of Physics,Technische Universität Chemnitz, Germany, 5École Polytechnique, France, 6Institut Néel, Université Grenoble Alpes, CNRS,Grenoble INP, France

DRAFT


ThP-CR-2 (Poster)Luminescence properties of non-polar (11-20) GaN layers overgrown on differentGaN microstructuresJochen Bruckbauer,1 Yipin Gong,2 Ling Jiu,2 Anja Ipsen,3 Sebastian Bauer,3 Raphael Müller,3 Klaus Thonke,3 TaoWang,2 and Robert W. Martin1

1University of Strathclyde, United Kingdom, 2University of Sheffield, United Kingdom, 3Ulm University, Germany

ThP-CR-3 (Poster)Overcoming inhomogeneous linewidth broadening of single photon emissions inSingle InGaN QD grwon on GaN nano-pyramidsJong-Hoi Cho, Youngmin M. Kim, Seung-Hyuk Lim, Hwan-Seop Yeo, Sejeong Kim, Su-Hyun Gong, and Yong-HoonChoDepartment of Physics, Korea Advanced Institute of Science and Technology, Republic of Korea

ThP-CR-4 (Poster)Effect of polarity on light emission of GaN nanowiresJochen Bruckbauer,1 Aimo Winkelmann,1,2 Ben Hourahine,1 Xiang Xu,3 Tao Wang,3 Carol Trager-Cowan,1 andRobert W. Martin1

1University of Strathclyde, United Kingdom, 2Laser Zentrum Hannover e.V., Germany, 3University of Sheffield, UnitedKingdom

ThP-CR-5 (Poster)Optical Characterization of a Site-controlled III-nitride Quantum Dot formed onSelf-limited StructureHwan-Seop Yeo, Min-Ho Choi, Kwanjae Lee, Jong-Hoi Cho, Young Chul Sim, and Yong-Hoon ChoDepartment of Physics, Korea Advanced Institute of Science and Technology, Republic of Korea

ThP-CR-6 (Poster)Origin of extreme radiation resistance of InNDarius Dobrovolskas,1 Zydrunas Podlipskas,1 Jonas Jurkevicius,1 Arunas Kadys,1 Marek Kolenda,1 VitalijKovalevskij,2 Ramunas Aleksiejunas,1 and Gintautas Tamulaitis1

1Institute of Photonics and Nanotechnology, Vilnius University, Lithuania, 2Center for Physical Sciences and Technology,Lithuania

ThP-CR-7 (Poster)Carrier heating by Auger recombination in InNDer-Jun Jang, Wei-Shan Chen, and Li-Wei TuDepartment of Physics, National Sun Yat-sen Univesrity, Taiwan

ThP-CR-8 (Poster)Fano resonance in the photo-absorption spectrum of InNHiroyasu Nakata,1 Gentoku Yoshida,1 and Tokuo Yodo2

1Department of Educational Collaboration, Osaka Kyoiku University, Japan, 2Department of Engineering, Osaka Institute ofTechnology, Japan

DRAFT


ThP-CR-9 (Poster)High-quality GaN Epitaxially Grown on Si Substrate with Serpentine ChannelsTiantian Wei,1 Hua Zong,1 Shengxiang Jiang,1 Yue Yang,1 Hui Liao,1 Yahong Xie,2 Wenjie Wang,3 Junze Li,3 JunTang,4 and Xiaodong Hu4

1School of Physics, Peking University, China, 2Department of Materials Science and Engineering, University of California,Los Angeles, China, 3Microsystem and Terahertz Research Center, China Academy of Engineering Physics, China, 4HefeiIRICO Epilight Technology CO., Ltd., China

ThP-CR-10 (Poster)Photoluminescence Properties of Praseodymium Ions Implanted into Micro-Regions in Gallium NitrideShin-ichiro Sato,1 Manato Deki,2 Tohru Nakamura,3 Tomoaki Nishimura,3 Daniel Stavrevski,4 Brant Gibson,4 andTakeshi Ohshima1

1National Institutes for Quantum and Radiological Science and Technology, Japan, 2Nagoya University, Japan, 3HoseiUniversity, Japan, 4RMIT University, Australia

ThP-CR-11 (Poster)Photoluminescence spectroscopy of sharp emission peaks in Zn-doped GaNKang Gao,1 Tomoyuki Aoki,2 Munetaka Arita,1 Yasuhiko Arakawa,1 and Mark Holmes1,2

1Institute for Nano Quantum Information Electronics, The University of Tokyo, Japan, 2Institute of Industrial Science, TheUniversity of Tokyo, Japan

ThP-CR-12 (Poster)Wafer-Scale Analysis of GaN Substrate and Epitaxial Wafer by Imaging CLJun Chen,1 Wei Yi,1 Takashi Kimura,1 Toshihide Nabatame,1 and Takashi Sekiguchi1,2

1National Institute for Materials Science, Japan, 2Tsukuba Univ., Japan

ThP-CR-13 (Poster)Quantification of composition and strain in In(Ga)N/GaN short period superlatticesby HRSTEMGeorgios P. Dimitrakopulos,1 Calliope Bazioti,1 Isaak G. Vasileiadis,1 Julita Smalc-Koziorwska,2 Slawomir Kret,3

Emmanouil Dimakis,4 Thomas Kehagias,1 Tadeusz Suski,2 Theodoros Karakostas,1 Theodore D. Moustakas,5 andPhilomela Komninou1

1Department of Physics, Aristotle University of Thessaloniki, Greece, 2Institute of High Pressure Physics, Polish Academy ofSciences, Poland, 3Institute of Physics, Polish Academy of Sciences, Poland, 4Institute of Ion Beam Physics & Materials Re-search, Helmholtz-Zentrum Dresden-Rossendorf, Germany, 5Department of Electrical and Computer Engineering, PhotonicsCenter, Boston University, United States of America

ThP-CR-14 (Poster)Fabrication of high -aspect GaN nanostructures by hydrogen atomsphere anisotropicthermal etching (HEATE) with addition of ammnia gasYusei Kawasaki,1 Akihiro Matsuoka,1 Yusuke Namae,1 Yuki Ooe,1 and Akihiko Kikuchi1,2

1Sophia University, Japan, 2Sophia Nanotechnology Research Center, Japan

ThP-CR-15 (Poster)Micro-Raman Studies of Strain in Bulk GaN Crystals Grown by Hydride VaporPhase Epitaxy on Ammonothermal GaN SeedsMikolaj Amilusik,1 Damian Wlodarczyk,2 Andrzej Suchocki,2 and Michal Bockowski1,3

1Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2Insititute of Physics Polish Academy of Sciences,Poland, 3Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, NagoyaUniversity, Japan

DRAFT


ThP-CR-16 (Poster)Atomic force microscopy study of the pH-dependent surface properties of galliumnitrideJianan Wang,1,2 Hua Li,2 Brett Nener,1 Giacinta Parish,1 and Rob Atkin2

1Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, Australia, 2School ofMolecular Sciences, The University of Western Australia, Australia

ThP-CR-17 (Poster)Study of the dependence of GaN surface oxidation on the crystalline plane by in-situXPS during O2 molecular beam irradiationYuya Asai,1,2 Akitaka Yoshigoe,3 Masato Sumita,4 Akira Uedono,2 and Masatomo Sumiya1

1Natinal Institute for Material Science, Japan, 2University of Tsukuba, Japan, 3Japan Atomic Energy Agency, Japan, 4RIKENAIP, Japan

ThP-CR-18 (Poster)Comparative study on structural and optical properties of InGaN/GaN MQWsgrown by pulsed MOVPEMantas Dmukauskas,1 Tadas Malinauskas,1 Roland Tomasiunas,1 Juras Mickevicius,1 Darius Dobrovolskas,1 Mar-tynas Skapas,2 Sandra Stanionyte,2 and Arunas Kadys1

1Vilnius University, Faculty of Physics, Institute of Photonics and Nanotechnology , Lithuania, 2Department of Characteri-zation of Materials Structure, Institute of Chemistry, Centre for Physical Sciences and Technology, Lithuania

ThP-CR-19 (Poster)Study and Modification of Interface States at Metal/GaN JunctionsSunan Ding, Yafeng Zhu, Rong Huang, Fangsen Li, and Hui YangSuZhou Institute of Nano-Tech and Nano-Bionics, CAS, China

ThP-CR-20 (Poster)Characterisation of a GaN {0001} Substrate using X-ray multiple diffraction in crystalby Renninger ScanTadashi Ohachi,1,2 Yuuki Sato,2 KIkurou Takemoto,1 Yoshiaki Hagi,3 Motoi Wada,2 and Shinzo Yoshikado2

1Interfce Reaction Epitaxy Laboratory, Japan, 2Doshisha Univ, Japan, 3Sumiden Semiconductor Materials Co., Ltd., Japan

ThP-CR-21 (Poster)Pyroelectric Polarization Effect on the Electrical Properties of (0001) GaN MOS/MISInterfacesZhibo Guo, Collin Hitchcock, and Tat-Sing Paul ChowRensselaer Polytechnic Institute, United States of America

ThP-CR-22 (Poster)Effect of Temperature on Electrical Transport Properties of MBE grown Mg-dopedGaN and AlGaNSylvie Contreras,1 Leszek Konczewicz,1 Sandrine Juillaguet,1 Hervé Peyre,1 Mohamed Al Khalfioui,2 SamuelMatta,1,2 Mathieu Leroux,2 Benjamin Damilano,2 Bernard Gil,1 and Julien Brault2

1Charles Coulomb Laboratory , L2C-UMR 5221 CNRS-Montpellier University, France, 2CRHEA-CNRS, Valbonne, France

DRAFT


ThP-CR-23 (Poster)Leakage reduction of SiO2/GaN MOS structure by high pressure water vapor an-nealingTengda Lin, Mutsunori Uenuma, Yasuaki Ishikawa, and Yukiharu UraokaNara Institute of Science and Technology, Japan

ThP-CR-24 (Poster)High Quality SiNx Deposited by ICP-CVD for III-Nitride HEMTsVivek Surana, Navneet Bhardwaj, Akanksha Rawat, Yogendra K. Yadav, Swaroop Ganguly, and Dipankar SahaDepartment of Electrical Engineering, Indian Institute of Technology Bombay, India

ThP-CR-25 (Poster)Dislocations as porosification channels in mesoporous GaN DBRs - a depth-dependent plan-view TEM studyFabien C-P Massabuau, Helen P. Springbett, John C. Jarman, Yingjun Liu, Giorgio Divitini, Tongtong Zhu, andRachel A. OliverDepartment of Materials Science and Metallurgy, University of Cambridge, United Kingdom

ThP-CR-26 (Poster)Effect of Carbon on Traps in p-GaN Grown by MOVPE on GaN SubstrateTatsuya Kogiso,1 Hikaru Yoshida,1 Yutaka Tokuda,1 Tetsuo Narita,2 Kazuyoshi Tomita,2 and Tetsu Kachi31Aichi Institute of Technology, Japan, 2Toyota Central R&D Labs., Inc., Japan, 3Nagoya University, Japan

ThP-CR-27 (Poster)Defect structure analysis of N-polar InGaN/GaN quantum-well structureTakanori Kiguchi, Yumiko Kodama, Takahisa Shiraishi, Toyohiko J. Konno, and Tomoyuki TanikawaInstitute for Materials Research, Tohoku University, Japan

ThP-CR-28 (Poster)Interface trap states at p-GaN MO(I)S capacitors with different gate dielectricsLiwen Sang, Bing Ren, Meiyong Liao, Yasuo Koide, and Masatomo SumiyaMANA, NIMS, Japan

ThP-CR-29 (Poster)DLTS Studies of Plastically Deformed GaNShun Itoh,1 Yutaka Tokuda,1 and Ichiro Yonenaga2

1Aichi Institute of Technology, Japan, 2Tohoku University, Japan

ThP-CR-30 (Poster)Effect of pit defects on carrier behavior in GaNXiaojuan Sun,1 Cuihong Kai,1,2 Yuping Jia,1 Zhiming Shi,1 Henan Liu,1 Ke Jiang,1,2 Jianwei Ben,1,2 and Dabing Li11Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, China, 2University of ChineseAcademy of Sciences, China

ThP-CR-32 (Poster)First-principles molecular dynamics study of two-dimensional bilayer GaNTomoe Yayama,1 Anh Khoa Augustin Lu,2 Tetsuya Morishita,1,2 and Takeshi Nakanishi1,2

1Research Center for Computational Design of Advavnced Functional Materials (CD-FMat), National Institute of AdvancedIndustrial Science and Technology (AIST), Japan, 2Mathematics for Adavncd Materials-Open Innoation Laboratory (MathAM-OIL), National Institute of Advanced Industrial Science and Technology (AIST), Japan

DRAFT


ThP-CR-33 (Poster)Intra-collisional field effect in one-dimensional GaN nanowiresShintaro Makihira and Nobuya MoriOsaka University, Japan

ThP-CR-34 (Poster)First principles study of defect reduction by Si incorporation into Al2O3Kenta Chokawa1 and Kenji Shiraishi21Graduate School of Engineering,Nagoya University, Japan, 2Institute of Materials and Systems for Sustainability, NagoyaUniversity, Japan

ThP-OD-1 (Poster)High photosensitivity AlGaN/GaInN/GaN heterojunction field-effect transistortype visible photosensorsMegumi Sakata,1 Motoaki Iwaya,1 Tetsuya Takeuchi,1 Satoshi Kamiyama,1 and Isamu Kamiyama1,2

1Department of Materials Science and Engineering, Meijo University, Japan, 2Akasaki Research Center, Nagoya University,Japan

ThP-OD-2 (Poster)Origin of optical absorption in AlN with Air-voidKengo Nagata,1,2 Hiroaki makino,1,2 Ryoki Kamada,1,2 Shinichi Matsui,1,2 Yoshiki Saito,1,2 Hideki Omoya,1,2 andHisayuki Miki1,2

1TOYODA GOSEI Co., Ltd., Japan, 2TS Opto Co., Ltd., Japan

ThP-OD-3 (Poster)Effect of P-side Finger Electrode Design on Device Performance of 280 nm AlGaNLEDsYu-Shiuan Yao,1 Jhih-Yuan Jheng,1 Shuo-Huang Yuan,1 Sin-Liang Ou,2 Bo-Wen Shiau,1 Ray-Hua Horng,3 andDong-Sing Wuu1

1Department of Materials Science and Engineering, National Chung Hsing University, Taiwan, 2Bachelor Program for Designand Materials for Medical Equipment and Devices, Da-Yeh University, Taiwan, 3Institute of Electronics, National Chiao TungUniversity, Taiwan

ThP-OD-4 (Poster)High-Al-content AlGaN-based Avalanche Schottky-DiodesLars Hahn, Thorsten Passow, Frank Fuchs, Lutz Kirste, Rachid Driad, Frank Rutz, Stefano Leone, Robert Rehm,and Oliver AmbacherFraunhofer Insitute for Applied Solidstate Physics IAF, Germany

ThP-OD-5 (Poster)Leakage current reduction method for high performance GaN-based APDsSeong Ran JEON,1 Seong Hun Jeong,2 Young Ho Song ,3 and Ho-Young Cha4

1Korea Photonic Technology Institute, Republic of Korea, 2Korea Photonic Technology Institute, Republic of Korea, 3KoreaPhotonic Technology Institute, Republic of Korea, 4Korea Photonic Technology Institute, Republic of Korea

DRAFT


ThP-OD-6 (Poster)High performance UVC LEDs below 240 nm grown on AlN substrateAkira Yoshikawa,1 Ryosuke Hasegawa,1 Yuta Honma,1 Tomohiro Morishita,1 Kazihiro Nagase,1 Chris Scully,2

Satoshi Yamada,1,2 James Grandusky,2 Jonathan Mann,2 Amy Miller,2 and Leo J. Schowalter2

1Asahi Kasei corporation, Japan, 2Crystal IS, United States of America

ThP-OD-7 (Poster)Hybrid growth of AlGaN deep ultraviolet light emitting diodes by MBE andMOCVDKe Wang, Noritoshi Maeda, and Hideki HirayamaRIKEN, Japan

ThP-OD-8 (Poster)AlGaN Avalanche Photodiodes with bevel edge terminationsHaifan You, Dunjun Chen, Hai Lu, Rong Zhang, and Youdou ZhengSchool of Electronic Science and Engineering, Nanjing University, China

ThP-OD-9 (Poster)Fabrication of Self-Aligned Twofold Epitaxial Lateral Overgrowth for highly Effi-cient Three-Dimensional GaN-Based Light Emitting DiodesYang-Seok Yoo, Hyun Gyu Song, Min-Ho Jang, Sang-Won Lee, and Yong-Hoon ChoDepartment of Physics, Korea Advanced Institute of Science and Technology, Republic of Korea

ThP-OD-10 (Poster)Efficiency of InGaN/GaN quantum wells: the role of indium atoms in the captureof point defectsCamille Haller, Jean-François Carlin, Gwénolé Jacopin, Wei Liu, Denis Martin, Raphaël Butté, and Nicolas GrandjeanInstitute of Physics, Ecole polytechnique fédérale de Lausanne (EPFL)„ Switzerland

ThP-OD-11 (Poster)Spectral-temporal Study on the Output Power of Green InGaN LEDsVanessa Simon, Matthias Wachs, and Ulrich Theodor SchwarzChemnitz University of Technology, Germany

ThP-OD-12 (Poster)GaInN growth by RF-MBE for underlying layers in red LEDsYusuke Nakajima, Kazuki Uehara, Tomohiro Yamaguchi, Takeyoshi Onuma, and Tohru HondaDepartment of Electric Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Japan

ThP-OD-13 (Poster)InGaN Resonant Cavity Light Emitting Diode with Embedded Porous GaN ReflectorChia-Feng Lin,1 Yi-Yun Chen,1 Guo-Yi Shiu,1 Bo-Syun Hong,1 and Tzong-Liang Tsai21National Chung Hsing University, Taiwan, 2Lextar Electronics Corporation, Taiwan

ThP-OD-14 (Poster)MOVPE growth of self-activated, tunnel junction, InGaN LED by spontaneousformation of islands.Lucja Marona,1,2 Dario Schiavon,1,2 Szymon Grzanka,1,2 Julita Smalc-Koziorowska,1,2 Krzysztof Gibasiewicz,1 andPiotr Perlin1,2

1Institute of High Pressure Physics PAS, Warsaw, Poland, 2TopGaN, Warsaw, Poland

DRAFT


ThP-OD-15 (Poster)The application of efficiency evaluation for InGaN-based LEDs in visible light com-municationHuimin Lu,1 Tongjun Yu,2 and Jianping Wang1

1School of Computer and Communication Engineering, University of Science and Technology Beijing, China, 2The State KeyLaboratory for Mesoscopic Physics, School of Physics, Peking University, China

ThP-OD-17 (Poster)Investigation of Current- and Temperature-Dependent Efficiency Droop in Blue andRed Light-Emitting DiodesChan-Hyoung Oh, Jong-In Shim, and Dong-Soo ShinHanyang University ERICA, Republic of Korea

ThP-OD-18 (Poster)2D-array of GaN-based, multi-color light-emitting diodes manufactured by meansof p-type layer regrowthSzymon Grzanka,1,2 Dario Schiavon,1,2 Krzysztof Gibasiewicz,2 Jacek Kacperski,1 Anna Kafar,2 Irena Makarowa,1

and Piotr Perlin1,2

1TopGaN Ltd, Poland, 2Institute of High Pressure Physics, Polish Academy of Sciences, Poland

ThP-OD-19 (Poster)Highly efficient microscale light-emitting diodes using nickel-doped silicon oxideelectrodesKyung Rock Son, Jae Wan Park, Sang Hoon Oh, Byeong Ryong Lee, and Tae Geun KimSchool of Electrical Engineering, Korea University, Republic of Korea

ThP-OD-20 (Poster)Dependence of the output performance on the size of green light emitting diodeswith and without V pitsDa Hoon Lee,1 Dae-Hyun Kim,1 Young Soo Park,2 Hiroshi Amano,3 and Tae-Yeon Seong1,2

1Department of Nanophotonics, Korea University, Republic of Korea, 2Department of Materials Science and Engineering,Korea University, Republic of Korea, 3Nagoya University, Japan

ThP-OD-21 (Poster)Deep-UV emission from highly-ordered AlGaN/AlN core-shell nanorodsPierre-Marie Coulon,1 Gunnar Kusch,2 Robert W. Martin,2 and Philip A. Shields1

1Department of Electrical & Electronic Engineering, University of Bath, United Kingdom, 2Department of Physics, SUPA,University of Strathclyde, United Kingdom

ThP-OD-22 (Poster)Electron-beam-pumped III-nitride semiconductor based plasmonic nanolasers emit-ting in visible light regionTao Tao,1 Ting Zhi,2 Bin Liu,1 Peng Chen,1 Zili Xie,1 Hong Zhao,1 Fangfang Ren,1 Dunjun Chen,1 Youdou Zheng,1

and Rong Zhang1

1Nanjing University, China, 2Nanjing University of Posts and Telecommunications, China

DRAFT


ThP-OD-23 (Poster)Optimization of ITO deposition condition for surface plasmon enhanced green LEDKengo Yamamoto,1 Dong-Pyo Han,1 Seiji Ishimoto,1 Ryoya Mano,1 Satoshi Kamiyama,1 Tetsuya Takeuchi,1 MotoakiIwaya,1 and Isamu Akasaki1,2

1Meijo University, Japan, 2Akasaki Research Center, Nagoya University, Japan

ThP-OD-24 (Poster)Optical simulation of GaInN-based Multi-Quantum-Shell (MQS) LED using n-GaNcurrent diffusing layerMizuki Terazawa,1 Masaki Ohya,1,3 Kazuyoshi Iida,1,3 Naoki Sone,1,4 Atsushi Suzuki,1 Satoshi Kamiyama,1 TetsuyaTakeuchi,1 Motoaki Iwaya,1 and Isamu Akasaki1,2

1Meijo University , Japan, 2Akasaki Research Center, Nagoya University, Japan, 3Toyoda Gosei Co., Ltd, Japan, 4KoitoManufacturing CO., LTD, Japan

ThP-OD-25 (Poster)UV-visible photodetectors based on GaN nanowires/perovskite grown on Si withimproved responsivityDhaifallah R. Almalawi,1 Norah Alwadai,1,2 Somak Mitra,1 and Iman S. Roqan1

1Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), , Saudi Arabia,2Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University (PNU), Saudi Arabia

ThP-OD-26 (Poster)GaN Nanophosphors for White Light: From Material to DeviceMirgender Kumar and Si-Hyun ParkDepartment of Electronics Engineering, Yeungnam University, Republic of Korea

ThP-OD-27 (Poster)Modelling of Band Gaps in Short Period In(Ga)N/GaN Superlattices with DifferentSequences of Barrier and Quantum WellsIzabela Gorczyca,1 Grzegorz Staszczak,1 Ewa Grzanka,1 Grzegorz Targowski,2 Tadek Suski,1 Niels EgedChristensen,3 Takahiro Kawamura,4 and Yoshikiro Kangawa5,6

1Institute of High Pressure Physics, UNIPRESS, Warsaw, Poland, 2TopGaN, Warsaw, Poland, 3Department of Physics andAstronomy, Aarhus University, Denmark, 4Department of Mechanical Engineering, Mie University, Japan, 5RIAM, KyushuUniversity, Fukuoka, Japan, 6CIRFE, IMaSS, Nagoya University, Japan

ThP-OD-28 (Poster)Collective behavior of injected excitons in GaN-based multi-quantum wells atthresholdDing Li,1,2,5 Cunda Wang,3,4 Wei Yang,3 Xiufang Yang,4 Liefeng Feng,4 Markus Weyers,5 Bo Shen,3 Guoyi Zhang,3

and Xiaodong Hu3

1CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute ofNanoenergy and Nanosystems, Chinese Academy of Sciences, China, 2School of Nanoscience and Technology, University ofChinese Academy of Sciences, China, 3State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School ofPhysics, Peking University, China, 4Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technol-ogy, Faculty of Science, Tianjin University, China, 5Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik,Germany

DRAFT


ThP-OD-29 (Poster)Towards etched facets in laser diodes based on InGaN/GaNKrzysztof Gibasiewicz,1 Jacek Kacperski,2 Szymon Grzanka,1,2 Lucja Marona,1,2 Irina Makarowa,2 Tadeusz Suski,1

and Piotr Perlin1,2

1Institute of High Pressure Physics, “Unipress” , Poland, 2TopGaN Limited, Poland

ThP-OD-30 (Poster)A Corollary of Donor-Acceptor Pair Mid Bandgap States on GaN based Photodetec-tion DevicesShibin Krishna, Neha Aggarwal, Abhiram Gundimeda, Sudhir Husale, and Govind GuptaCSIR - National Physical Laboratory (CSIR-NPL), and Academy of Scientific & Innovative Research, CSIR-NPL Campus DrK. S. Krishnan Road, New Delhi-110012, India., India

ThP-OD-31 (Poster)Theoretical Analysis of an AlGaN Quantum Dot Semiconductor AmplifierLudwig Albrecht Thorsten Greif and Andrei SchliwaDepartment of Solid State Physics, Technical University Berlin, Germany

ThP-OD-32 (Poster)Hybrid Cyan Nitride/Red Phosphors White Light-emitting Diodes with Micro-holestructuresTing Zhi,1 Tao Tao,2 Bin Liu,2 Zili Xie,2 and Rong Zhang2

1College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommuni-cations, China, 2School of Electronic Science and Engineering, Nanjing University, China

ThP-OD-33 (Poster)LED chip lift-off from bulk GaN substrate with femtosecond laser micromachiningVladislav Voronenkov,1,2 Natalia Bochkareva,1 Maxim Virko,2 Ruslan Gorbunov,1 Andrey Zubrilov,1 ViktorKogotkov,2 Philippe Latyshev,2 Yuri Lelikov,1 Andrey Leonidov,2 and Yuri Shreter1,2

1Ioffe Physical-Technical Institute, Russia, 2TRINITRI-Technology LLC, Russia

ThP-ED-1 (Poster)Influence of an underlying 2DEG on the performance of a p-channel MOSHFET inGaNJingggui Zhou, Ashwani Kumar, and Maria Merlyne De SouzaDepartment of Electronic and Electrical Engineering, University of Sheffield, United Kingdom

ThP-ED-2 (Poster)Study on Breakdown Field in Fe-doped Semi-insulating GaN SubstratesAtsuki Aoai,1 Kosuke Suzuki,1 Joel Tacla Asuber,1 Hirokuni Tokuda,1 Narihito Okada,2 Kazuyuki Tadatomo,2 andMasaaki Kuzuhara1

1University of Fukui, Japan, 2University of Yamaguchi , Japan

ThP-ED-4 (Poster)Modeling the Dynamic Power loss of AlGaN/GaN HEMT Power Electronic DeviceOperating in DCM and CCM ModeJianming LeiKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, NanjingUniversity, China

DRAFT


ThP-ED-5 (Poster)Contact resistance improvement in alloyed ohmic contact on AlGaN/GaN het-erostructureMudassar Imam Yahya Meer, Kuldeep Takhar, Swaroop Ganguly, and Dipankar SahaDepartment of Electrical Engineering, Indian Institute of Technology Bombay„ India

ThP-ED-6 (Poster)Study of ohmic contact electrode on p-GaN using moderate crystal damage effectinduced by femtosecond laser irradiation techniqueHiroyuki Katayama,1 Yoshiki Naoi,1 Tatsuya Okada,1 Yasuhiro Tanaka,2 and Takuro Tomita1

1Tokushima University, Japan, 2Kagawa University, Japan

ThP-ED-7 (Poster)Impact of Damage-Free Wet Etching Process on Fabrication of High BreakdownVoltage GaN p-n Junction DiodesNaomi Asai,1 Hiroshi Ohta,1 Fumimasa Horikiri,2 Yoshinobu Narita,2 Takehiro Yoshida,2 and Tomoyoshi Mishima1

1Hosei University, Japan, 2SCIOCS, Japan

ThP-ED-8 (Poster)Mapping of neutral-beam etching induced damages on GaN surfaces using scanninginternal photoemission microscopyKenji Shiojima,1 Tetsuya Suemitsu,2 Takuya Ozaki,3 and Seiji Samukawa3

1University of Fukui, Japan, 2Center for Innovative Integrated Electronic Systems, Tohoku University, Japan, 3Institute ofFluid Science, Tohoku University, Japan

ThP-ED-9 (Poster)Proposal of GaN oxide-formed two-step wet etching processYasuharu Kiyoto,1 Tetsuo Makie,1 Hiroshi Fujioka,2 and Narihiko Maeda1

1Tokyo University of Technology, Japan, 2Institute of Industrial Science, The University of Tokyo, Japan

ThP-ED-10 (Poster)p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interfaces for high thermal tol-eranceShunichi Kono, Jianbo Liang, and Naoteru ShigekawaGraduate School of Engineering, Osaka City University, Japan

ThP-ED-11 (Poster)Influence of the oxygen in Hot-Carrier-Stress-Induced degradation in AlGaN/GaNhigh electron mobility transistorsLixiang Chen, Qing Zhu, Bin Hou, Jiejie Zhu, Xiaohua Ma, and Yue HaoSchool of Advanced Materials and Nanotechnology, Xidian University, China

ThP-ED-12 (Poster)Reliability investigation of normally-off AlGaN/GaN recessed MISHFETs with 5MeV proton irradiationDongmin Keum and Hyungtak KimHongik Univ., Republic of Korea

DRAFT


ThP-ED-13 (Poster)Reliability investigation of AlGaN/GaN HEMTs for deep space explorationQing Zhu,1 Lixiang Chen,1 Meng Zhang,1 Mei Wu,2 Xiaohua Ma,1 and Yue Hao2

1School of Advanced Materials and Nanotechnology, Xidian University, China, 2School of Microelectronics, Xidian University,China

ThP-ED-14 (Poster)Leakage current increase in p-GaN gate AlGaN/GaN power devices by ON-stategate biasXi Tang,1,2 Hamid Amini Moghadam,1 Philip Tanner,1 Jisheng Han,1 Ruisheng Zheng,2 Baikui Li,2 and SimaDimitrijev1

1Queensland Micro- and Nanotechnology Centre, Griffith University, Australia, 2College of Optoelectronic Engineering,Shenzhen University, China

ThP-ED-15 (Poster)Passivation investigation for etched p-GaN surface in normally-off GaN HEMTswith p-GaN cap layerDong Zhang, Weizong Xu, Changkun Zeng, Fangfang Ren, Dong Zhou, Rong Zhang, Youdou Zheng, and Hai LuSchool of Electronic Science and Engineering, Nanjing University, China

ThP-ED-16 (Poster)Suppression of Current Collapse by Pre In-situ Nitrogen Plasma Treatment withHigh Quality ICP-CVD SiNx on AlGaN/GaN HEMTsJun-seok Jeong, Chul-hee Lee, and Kwang-Seok SeoDept. of Electrical and Computer Engineering, Seoul National University, Republic of Korea

ThP-ED-17 (Poster)Interface Trap characterization of Thermally Grown TiO2 and Al2O3 Based MOS-capacitors using Deep level Transient and Conductance SpectroscopyAkanksha Rawat, Vivek Surana, Mudassar Meer, Swaroop Ganguly, and Dipankar SahaDepartment of electrical engineering, IIT Bombay, Mumbai, India, India

ThP-ED-18 (Poster)Influence of annealing process and working temperature on the ion-implanted iso-lation of AlGaN/GaN heterostructuresShuxin Tan1 and Baoshun Zhang2

1School of Electronics and Information, Nantong University, China, 2Key laboratory of Nanodevices and Applications, SuzhouInstitute of Nano-tech and Nano-bionics, CAS, China

ThP-ED-19 (Poster)Power Detector Based on GaN HEMTs for W-band Gigabit On-Off Keying Demod-ulatorTongde Huang,1,2 Johan Bergsten,2 and Niklas Rorsman2

1Nanjing University of Science and Technology, China, 2Chalmers University of Technology, Sweden

ThP-ED-21 (Poster)Growth and fabrication of AlGaN/GaN high electron mobility transistors for sensorapplicationsChu-Young Cho, Yumin Koh, Hyeong-Ho Park, and Kyung-Ho ParkElectronic Devices Laboratory, Korea Advanced Nano Fab Center, Republic of Korea

DRAFT


ThP-ED-22 (Poster)Achieving spin-filtering in vertical electrical transport structures containing ferro-magnetic GaN with Mn grown on sapphire substratesKarolina Kalbarczyk, Katarzyna Gas, Marek Foltyn, Magdalena Majewicz, Piotr Nowicki, and Maciej SawickiInstitute of Physics, Polish Academy of Sciences, Warsaw, Poland

ThP-ED-23 (Poster)Superior CO and NO2 Gas Sensing of Thermally Oxidised Ga2O3 on GaNShubhendra Jain,1,2 Pratibha Goel,2 Tushar Garg,2,3 and Govind Gupta1,2

1Academy of Scientific and Innovative Research, CSIR-NPL Campus, New Delhi, India, 2CSIR-National Physical Laboratory(NPL), New Delhi, India, 3Institute of Chemical Technology, Mumbai, India

ThP-ED-24 (Poster)GaN p-i-n Diodes for Radiation DetectionKazimieras Badokas,1 Tadas Malinauskas,1 Domas Paipulas,2 Arunas Kadys,1 Tomas Grinys,1 and EugenijusGaubas1

1Institute of Photonics and Nanotechnology, Vilnius University, Lithuania, 2Laser Research Center, Vilnius University,Lithuania

ThP-ED-25 (Poster)GaN Homojunction Tunnel Diodes Exhibiting Negative Differential Resistance andtheir Application as Tunnel ContactsEvan Clinton,1 Ehsan Vadiee,1 Karan Mehta,1 P. Douglas Yoder,1 Zachary Engel,1 Christopher Matthews,1 AlexWeidenbach,1 Heather McFavilen,2 Chantal Arena,2 and W. Alan Doolittle1

1Georgia Institute of Technology, United States of America, 2Photonitride Devices Inc., United States of America

ThP-ED-26 (Poster)AlGaN/GaN HEMT based high sensitive NO2 gas sensorsAkhil Ranjan,1 Manvi Agrawal,2 K. Radhakrishnan,1,2 and Nethaji Dharmarasu2

1Center for Micro/Nano-electronics (NOVITAS), School of Electrical and Electronic Engineering, Nanyang TechnologicalUniversity, Singapore, 2TL Nanyang Technological University, Singapore

ThP-ED-27 (Poster)The effects of Gate bias and barrier thickness on the sensitivity of Pt/AlGaN/GaNHEMT-based Hydrogen gas sensorsAnh Tuan Vuong, Dongmin Keum, and Hyungtak KimSchool of Electronic and Electrical Engineering, Hongik University, Republic of Korea

ThP-ED-28 (Poster)III-Nitrides Hybrid Heterostructures Based Infrared and Visible-Blind Ultra-violetPhotodetectorsBASANTA KUMAR ROUL,1,2 Rohit Pant,1 Greeshma Chandan,1 A. M. Chowdhury,1 Deependra Kumar Singh,1 K.K. Nanda,1 and S. B. Krupanidhi11Materials Research Centre, Indian Institute of Science, Bangalore 560012, India, India, 2Central Research Laboratory, BharatElectronics, Bangalore 560013, India, India

DRAFT


ThP-ED-29 (Poster)Photodetection and FET characterization of single GaN nanorod developed fromself-assembled GaN nanorods grown on Si (111) by PAMBERohit Kumar Pant, Deependra Kumar Singh, Greeshma Chandan, Arun Malla Chowdhury, Basanta Roul, K KNanda, and S B KrupanidhiMaterials Research Centre, IISC Bangalore , India

ThP-ED-30 (Poster)High free hole concentration in Al-rich p-AlGaN grown on AlN substrateBiplab Sarkar,1,2 Andrew Klump,1 Seiji Mita,3 Mathew Breckenridge,1 Pramod Reddy,3 Ramon Collazo,1 and ZlatkoSitar1,3

1Department of Materials Science and Engineering, North Carolina State University, United States of America, 2Departmentof Electronics Engineering, IIT (ISM) Dhanbad, India, 3Adroit Materials, Cary, NC, United States of America

ThP-ED-31 (Poster)High-Al AlxGa1-xN MOS-HEMTs over thick AlN/Sapphire TemplatesXuhong Hu, Richard Floyd, Mollah Shahab, Kamal Hussian, Seongmo Hwang, Fatima Asif, Grigory Simin, andAsif KhanDepartment of Electrical Engineering, University of South Carolina, United States of America

ThP-ED-32 (Poster)Design and Growth of AlN-based HEMT with polarization-charge relieving struc-tureUiho Choi, Kyeongjae Lee, Taemyung Kwak, Jaeyeon Han, Taehoon Jang, Yongjun Nam, Byeongchan So, andOkhyun NamKorea Polytechnic University, Republic of Korea

ThP-ED-33 (Poster)Phonon modes Analysis of AlN / InN SuperlatticeYoshihiro Ihira and Masato OdaWakayama University, Japan

ThP-ED-34 (Poster)Electronic structure of stacked nitride-based quantum dotsAlexander Mittelstaedt and Andrei SchliwaInstitute of Solid State Physics, Technische Universitaet Berlin, Germany

ThP-ED-36 (Poster)Thermal characteristics of GaN-on-SiC HEMTs with different backside via layoutsYinan Zhong and Yueming HsinDepartment of Electrical Engineering, National Central University, Taiwan

ThP-ED-37 (Poster)Reduction in interface trap density and improvement in DC and RF performanceusing wet oxidation of AlGaN/GaN HEMTsMudassar Imam Yahya Meer, Akanksha Rawat, Yogendra Yadav, Swaroop Ganguly, and Dipankar SahaDepartment of Electrical Engineering, Indian Institute of Technology Bombay„ India

DRAFT


ThP-ED-38 (Poster)Improved fmax and breakdown voltage in AlGaN/GaN HEMT with plasma treat-mentMinhan Mi,1 Xiaohua Ma,2 Ling Yang,2 Bin Hou,2 Meng Zhang,2 Sheng Wu,1 and Yue Hao1

1State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, school of Microelectronics, Xidian University,Xi’an 710071, China, China, 2School of advanced materials and nanotechnology, Xidian University, Xi’an 710071, China,China

ThP-ED-39 (Poster)Dual Gate AlGaN/GaN High Electron Mobility Transistor with improved MaximumOperating FrequencyMeryleen Mohapatra1 and Ajit Kumar Panda2

1Siksha ‘O’ Anusandhan Deemed to be University, India, 2National Institute of Science and Technology, India

ThP-ED-40 (Poster)Fabrication of low loss and compact size inter-digitated capacitor on GaN usingSi3N4Navneet Bhardwaj, Yogendra Kumar Yadav, Swaroop Ganguly, and Dipankar SahaIIT Bombay, India

DRAFT

International Workshop on Nitride Semiconductors 2018

IWN2018 Author Index

— A —Abate, V. J2-1Abd Rahman, M.B.MoP-GR-19Abdul Khudus, M.B.

MoP-GR-19Abdul Rahman, M.B.

TuP-OD-10Abdul Rais, S.B. MoP-GR-19Abdul Rais, S.B. TuP-OD-10Abdullaev, O. MoP-OD-7Abdullaev, O. TuP-GR-25Abdullaev, O. TuP-GR-7Abid, I. ED15-3Abu Bakar, A. MoP-GR-17Abu Bakar, A. MoP-GR-37Abu Bakar, A. TuP-GR-27Abu Bakar, A.B. MoP-GR-19Abu Bakar, A.B. TuP-OD-10Acciarri, M. TuP-GR-24Acciarri, M. TuP-GR-4Acciarri, M. TuP-GR-5Acker-James, D. GR14-4Adachi, M. GR11-7Adachi, M. GR11-8Adamczyk-Cieslak, B.

ED12-3Adamowicz, B. TuP-ED-27Adhikari, R. TuP-CR-15Adikimenakis, A. ThP-GR-13Agarwal, A. ED11-7Aggarwal, N. ED7-6Aggarwal, N. ThP-OD-30Aggarwal, T. MoP-OD-33Agrawal, M. ThP-ED-26Ahmad Makinudin, A.

MoP-GR-17Ahmad Makinudin, A.H.

MoP-GR-37Ahmad, M. TuP-GR-39Ahmad, M.B. TuP-OD-10Ahn, S. TuP-CR-10Ahtapodov, L. MoP-OD-35Ai, Y. ED14-7Ai, Y. MoP-GR-20Ai, Y. OD16-6Aidam, R. GR12-2Ajia, I.A. MoP-CR-20Akagi, T. J7-4Akagi, T. OD8-2Akasaka, T. GR14-2

Akasaki, I. CR14-7Akasaki, I. GR13-3Akasaki, I. GR2-2Akasaki, I. GR2-6Akasaki, I. GR5-2Akasaki, I. J7-4Akasaki, I. MoP-OD-4Akasaki, I. OD14-2Akasaki, I. OD16-4Akasaki, I. OD16-7Akasaki, I. OD3-1Akasaki, I. OD3-4Akasaki, I. OD5-3Akasaki, I. OD8-2Akasaki, I. OD9-3Akasaki, I. ThP-GR-10Akasaki, I. ThP-GR-12Akasaki, I. ThP-OD-23Akasaki, I. ThP-OD-24Akatsuka, Y. OD8-2Akazawa, M. MoP-CR-23Akazawa, Y. MoP-ED-18Akhmerov, Y. MoP-OD-7Akhmerov, Y. TuP-GR-25Akhmerov, Y. TuP-GR-7Akimoto, Y. TuP-OD-10Akiyama, T. CR9-3Akiyama, T. GR13-6Akiyama, T. MoP-CR-34Akiyama, T. MoP-GR-30Akiyama, T. TuP-CR-31Aktas, O. GR12-7Al Khalfioui, M. J5-1Al Khalfioui, M. MoP-CR-3Al Khalfioui, M. ThP-CR-22Al-Zuhairi, O. MoP-GR-17Al-Zuhairi, O. MoP-GR-37Al-Zuhairi, O. TuP-GR-27Alam, K. GR10-2Albadri, A. OD1-6Albert, S. CR14-4Albert, S. J5-2Albrecht, M. CR1-4Albrecht, M. CR1-6Albrecht, M. CR7-7Aleksiejunas, R. ThP-CR-6Aleksiejunas, R. TuP-CR-5Alexandrov, D. ThP-GR-25Alexandrov, D. ThP-GR-26Alexeev, A.N. ThP-GR-17Alfieri, G. CR8-6Alfieri, G. MoP-CR-33

Alhassan, A. CR2-2Alhassan, A. OD6-6Alhassan, A.I. OD1-6Alias, E. TuP-OD-9Allerman, A.A. J2-1Allerman, A.A. MoP-CR-35Alloing, B. CR6-2Alloing, B. J1-5Alloing, B. J3-3Almalawi, D.R. ThP-OD-25Alomari, D. ED13-5Alpert, H.S. ED7-2Alshahed, M. ED13-5Aluyev, A. MoP-OD-7Aluyev, A. TuP-GR-25Aluyev, A. TuP-GR-7Alwadai, N. ThP-OD-25Alyamani, A. OD1-6Alyamani, A.Y. ThP-GR-17Amador, N. J1-7Amalraj, F. TuP-GR-28Amalraj, F. TuP-GR-29Amano, H. CR5-2Amano, H. ED1-4Amano, H. ED10-4Amano, H. ED5-1Amano, H. ED9-2Amano, H. GR10-4Amano, H. GR10-8Amano, H. GR13-4Amano, H. GR16-5Amano, H. GR7-2Amano, H. J1-1Amano, H. J6-6Amano, H. MoP-OD-4Amano, H. OD11-3Amano, H. OD14-2Amano, H. OD2-5Amano, H. ThP-OD-20Amano, H. TuP-GR-2Ambacher, O. GR12-2Ambacher, O. OD3-5Ambacher, O. ThP-OD-4Ambacher, O. TuP-GR-12Amemiya, Y. TuP-OD-27Amichi, L. CR2-1Amilusik, M. GR3-4Amilusik, M. GR3-6Amilusik, M. GR9-2Amilusik, M. GR9-4Amilusik, M. GR9-6Amilusik, M. ThP-CR-15

DRAFT


Amini Moghadam, H.MoP-ED-24

An, Y. MoP-OD-9Anand, K. MoP-OD-26Anderson, T.J. ED2-3Anderson, T.J. J2-3Anderson, V.R. TuP-GR-6Ando, R. MoP-CR-24Ando, Y. ED1-4Ando, Y. ED10-4Ando, Y. ED13-4Andre, Y. J1-1Andreev, S. ThP-GR-25Androulidaki, M. ThP-GR-13Andrulevicius, M. MoP-CR-7Anikeeva, M. CR1-4Anikeeva, M. CR1-6Anvari, R. CR9-6Aoai, A. ThP-ED-2Aoki, T. GR10-4Aoki, T. GR10-5Aoki, T. ThP-CR-11Aoshima, K. CR16-2Aragon, A. J2-1Araidai, M. CR5-2Arakawa, K. OD9-3Arakawa, S. CR4-4Arakawa, T. OD6-5Arakawa, Y. CR13-1Arakawa, Y. CR13-3Arakawa, Y. CR13-5Arakawa, Y. OD10-1Arakawa, Y. ThP-CR-11Araki, K. TuP-ED-34Araki, T. CR4-3Araki, T. CR4-4Araki, T. TuP-CR-22Arca, E. CR9-7Arca, E. MoP-GR-31Arena, C. ThP-ED-25Arias, A. ED4-1Arita, M. CR13-1Arita, M. OD10-1Arita, M. ThP-CR-11Arita, N. GR12-8Armstrong, A.M. J2-1Armstrong, A.M. MoP-CR-35Artús, L. J6-2Arulkumaran, S. MoP-CR-31As, D.J. CR6-5Asada, T. CR6-4Asai, N. ED5-2Asai, N. MoP-ED-1Asai, N. ThP-ED-7Asai, Y. ThP-CR-17Asai, Y. TuP-ED-12

Asif, F. ThP-ED-31Asubar, J.T. MoP-ED-13Asubar, J.T. TuP-CR-23Asubar, J.T. TuP-ED-6Asuber, J.T. ThP-ED-2Atkin, R. ThP-CR-16Auf der Maur, M. OD2-2Auf Der Maur, M. OD5-4Ausserlechner, U. ED7-2Auzelle, T. GR14-6Avis, W. CR10-1Avit, G. J1-1Avramescu, A. J3-4Avramescu, A. ThP-CR-1Awaji, Y. OD7-3Azadmand, M. TuP-GR-24Azadmand, M. TuP-GR-4Azadmand, M. TuP-GR-5Azman, A. TuP-GR-27

— B —Babichev, A. J3-6Baca, A.G. TuP-ED-16Bader, S. CR16-3Bader, S.J. ED13-8Bader, S.J. TuP-ED-23Badokas, K. ThP-ED-24Baek, J. TuP-CR-10Bagheri, P.B. GR1-3Baik, K. MoP-ED-27Baker, J.N. CR8-7Baker, J.N. GR1-2Baker, M. ED7-4Baker, T. MoP-GR-2Bakin, A. ED10-3Bakin, A. ED10-5Banal, R.G. CR4-3Banal, R.G. TuP-CR-32Bao, J. GR10-2Baraniecki, T. GR6-1Barbato, A. ED11-1Barbato, M. ED11-1Barbier, C. J3-6Barbier, F. OD6-2Barcz, A. MoP-CR-29Baron, E. CR6-5Barr, R. ED15-6Bartel, C. CR9-7Barvat, A. MoP-OD-26Basceri, C. GR12-7Baskaran, B. CR2-1Bauer, S. CR9-7Bauer, S. GR2-4Bauer, S. ThP-CR-2Bauers, S. MoP-GR-31Bazioti, C. ThP-CR-13

Bechstedt, F. CR6-3Beckmann, C. OD13-2Behmenburg, H. GR1-6Behmenburg, H. GR12-7Beidoun, B. OD14-4Belabbas, I. TuP-CR-33Belde, B. CR12-2Ben, J. MoP-GR-18Ben, J. ThP-CR-30Bengoechea-Encabo, A.

CR14-4Bengoechea-Encabo, A. J5-2Benkhelifa, F. TuP-GR-12Ber, E. TuP-ED-18Berger, C. CR13-6Berger, C. CR2-5Berger, C. OD1-5Bergman, J. ED4-1Bergmann, M.A. OD14-7Bergsten, J. J2-2Bergsten, J. ThP-ED-19Bermundo, J.S. CR8-4Bertness, K. ED10-1Bertness, K. MoP-GR-32Bertram, F. CR1-6Bertram, F. CR12-5Bertram, F. CR13-6Bertram, F. CR14-4Bertram, F. CR2-5Bertram, F. OD12-4Besendoerfer, S. MoP-ED-17Besendoerfer, S. TuP-CR-30Betram, F. CR4-6Beyer, F. GR1-7Bezshlyakh, D. OD11-4Bharadwaj, S. ED13-8Bharadwaj, S. OD1-3Bhardwaj, N. ThP-CR-24Bhardwaj, N. ThP-ED-40Bhardwaj, N. TuP-ED-30Bhavana, P. MoP-ED-19Bhunia, S. ThP-GR-21Bi, Z. J7-1Bian, Z. MoP-ED-11Bian, Z. MoP-ED-9Bickermann, M. GR5-1Bieckermann, M. CR8-2Bietti, S. TuP-GR-24Bietti, S. TuP-GR-4Bietti, S. TuP-GR-5Binks, D.J. CR5-7Binks, D.J. TuP-CR-2Birner, S. OD4-3Biskupek, J. GR2-4Biswas, D. ED1-5Blaho, M. TuP-ED-8

DRAFT


Blanchard, P. MoP-GR-32Bläsing, J. CR13-6Bläsing, J. CR2-5Bläsing, J. CR6-5Bläsing, J. GR7-6Bläsing, J. OD1-5Bläsing, J. OD2-4Bläsing, R. CR8-2Blenkhorn, W.E. CR1-3Bo, S. GR11-6Bochkareva, N. ThP-OD-33Bochkareva, N. TuP-GR-1Bockowski, M. CR4-2Bockowski, M. CR8-5Bockowski, M. ED2-6Bockowski, M. GR3-4Bockowski, M. GR3-6Bockowski, M. GR4-3Bockowski, M. GR9-2Bockowski, M. GR9-4Bockowski, M. GR9-6Bockowski, M. MoP-CR-28Bockowski, M. ThP-CR-15Bockowski, M. TuP-CR-28Bockowski, M.S. GR9-1Bockowsky, M. OD4-7Boehm, M. OD9-1Bojarska, A. OD9-5Bonanni, A. TuP-CR-15Bondokov, R.T. GR5-3Bonef, B. CR2-2Bonef, B. OD12-7Bonef, B. OD6-6Bonera, E. TuP-GR-24Bonera, E. TuP-GR-4Bonera, E. TuP-GR-5Boopathi, K. ThP-GR-16Borga, M. ED11-1Boris, D. GR16-2Borisenko, D.P. TuP-GR-13Bornemann, S. OD11-4Bornemann, S. OD11-7Bornemann, S. OD2-2Bornemann, S. TuP-OD-12Bornemann, S. TuP-OD-13Bouazzaoui, F. MoP-GR-3Boucaud, P. CR15-6Boucaud, P. OD10-5Bouchoule, S. CR6-2Bouchoule, S. MoP-CR-15BOUGEROL, C. CR2-1Bougerol, C. J1-1Bougerol, C. J1-7Bougerol, C. J7-5Bougerol, C. J7-8Bouveyron, R. GR10-3

Brand, U. ED7-1Brandli, V. J3-3Brandt, O. GR14-5Brandt, O. GR14-6Brandt, O. GR6-3Brandt, O. J3-6Brar, B. ED4-1Brault, J. CR15-6Brault, J. J5-1Brault, J. MoP-CR-3Brault, J. OD10-5Brault, J. ThP-CR-22Brechenridge, M.H. GR1-3Breckenridge, M. ThP-ED-30Breckenridge, M.H. CR8-7Breckenridge, M.H. ED14-2Breckenridge, M.H. GR1-1Breckenridge, M.H. GR1-2Breckenridge, M.H. GR2-1Bremers, H. CR3-3Bremers, H. J3-2Bremers, H. J4-6Brendel, M. OD3-3Bretagnon, T. OD4-5Brimont, C. CR15-6Brimont, C. CR6-2Brimont, C. OD10-5Brimont, C. OD4-5Brubaker, M. ED10-1Brubaker, M. MoP-GR-32Bruckbauer, J. CR10-1Bruckbauer, J. ThP-CR-2Bruckbauer, J. ThP-CR-4Brueckner, P. ED4-2Brundmann, M. ThP-GR-14Brunner, F. OD3-3Buffolo, M. OD14-5Bui, K. ThP-GR-31Bulashevich, K. OD5-6Burghartz, P.N. ED13-5Butté, R. CR1-1Butté, R. CR1-2Butté, R. CR14-1Butte, R. J7-8Butté, R. OD12-1Butté, R. OD2-1Butté, R. ThP-OD-10

— C —Cai, D. ThP-GR-30Cai, D. TuP-GR-3Calarco, R. CR1-4Calarco, R. GR14-5Calleja, E. CR14-4Calleja, E. J5-2Callsen, G. CR1-1

Callsen, G. CR1-2Callsen, G. CR14-1Callsen, G. CR6-3Cambril, E. CR6-2Cameron, D. OD4-7Canato, E. ED11-1Cancellara, L. CR7-7Cao, B. TuP-GR-3Cao, D. MoP-OD-25Cao, X. ThP-GR-6Carlin, J.-F. CR1-1Carlin, J.-F. CR1-2Carlin, J.-F. CR14-1Carlin, J.-F. CR15-7Carlin, J.-F. GR12-3Carlin, J.-F. GR12-4Carlin, J.-F. J7-8Carlin, J.-F. OD12-1Carlin, J.-F. OD2-1Carlin, J.-F. ThP-OD-10Carlson, E.P. ED1-1Carter, A.D. ED4-1Carter, J. GR11-7Cassabois, G. J6-2Castelluci, D. J1-1Castiglia, A. OD9-4Caulmilone, R. TuP-ED-19Caut, A. OD2-1Ceder, G. CR9-7Ceder, G. MoP-GR-31Celio, K.C. J2-1Ch., R. MoP-OD-23Ch, R. MoP-GR-36Cha, H. TuP-ED-21Cha, H.-Y. ED14-6Cha, H.-Y. MoP-ED-7Cha, H.-Y. ThP-OD-5Cha, H.-Y. TuP-ED-11Cha, H.-Y. TuP-ED-15Cha, H.-Y. TuP-ED-2Cha, Y.-J. MoP-OD-16Cha, Y.-J. TuP-OD-21Chaix, C. J5-1Challa, S.R. J4-7Chan, L. OD2-3Chan, S.H. ED11-2Chandan, G. OD3-2Chandan, G. ThP-ED-28Chandan, G. ThP-ED-29Chandrasekar, H. ED6-1Chang, C.-J. MoP-GR-27Chang, C.-J. MoP-OD-12Chang, C.-W. ED7-5Chang, C.-W. OD13-5Chang, C.-W. TuP-CR-17Chang, C.-W. TuP-GR-23

DRAFT


Chang, C.-W. TuP-GR-37Chang, C.-Y. OD13-3Chang, E. MoP-GR-29Chang, E.-Y. TuP-GR-31Chang, L. MoP-GR-13Chang, L. MoP-GR-15Chang, S. TuP-GR-31Chang, S.-P. GR16-8Chang, T.-C. J1-4Chang, W.-Y. TuP-OD-20Charan, V.S. ED12-5Charles, A. ED6-5Charles, M. GR10-3Charles, M. TuP-GR-10Chaudhuri, R. CR16-3Chaudhuri, R. ED4-1Chaudhuri, R. TuP-ED-23Chaudhuri, R.T. ED13-8Chauhan, P. GR12-1Chauhan, P. MoP-GR-3Chausse, P. CR10-2Chausse, P. J1-5Chauvat, M.P. MoP-GR-3Checoury, X. CR15-6Checoury, X. OD10-5Chelny, A. MoP-OD-7Chelny, A. TuP-GR-25Chelny, A. TuP-GR-7Chen, C.-C. OD7-7Chen, C.-S. OD7-7Chen, D. ED2-4Chen, D. MoP-ED-23Chen, D. MoP-OD-24Chen, D. ThP-OD-22Chen, D. ThP-OD-8Chen, H. TuP-ED-28Chen, H.-H. CR1-7Chen, H.-H. CR9-2Chen, H.-Y. ED7-5Chen, H.-Y. OD13-5Chen, H.-Y. TuP-CR-17Chen, H.-Y. TuP-GR-23Chen, H.-Y. TuP-GR-37Chen, J. CR14-3Chen, J. CR2-3Chen, J. ED14-5Chen, J. GR10-2Chen, J. GR5-3Chen, J. ThP-CR-12Chen, J. TuP-CR-33Chen, J.-T. ED4-3Chen, J.-T. J2-2Chen, J.-T. TuP-GR-17Chen, J.-T. TuP-GR-32Chen, K. ED11-3Chen, K. ED8-1

Chen, K.J. CR16-5Chen, K.J. ED10-4Chen, K.J. TuP-OD-28Chen, L. MoP-CR-26Chen, L. OD3-7Chen, L. ThP-ED-11Chen, L. ThP-ED-13Chen, L. TuP-ED-20Chen, L. TuP-OD-11Chen, L.-R. MoP-OD-12Chen, P. CR7-5Chen, P. MoP-OD-24Chen, P. ThP-OD-22Chen, Q. OD13-5Chen, Q. TuP-GR-37Chen, Q.Y. TuP-CR-17Chen, Q.Y. TuP-GR-23Chen, S. OD8-3Chen, S.-W. MoP-GR-27Chen, T. ED4-4Chen, W. MoP-GR-28Chen, W.-S. ThP-CR-7Chen, X. ED2-4Chen, X. MoP-ED-22Chen, Y. J5-6Chen, Y. MoP-CR-5Chen, Y. MoP-GR-21Chen, Y. MoP-GR-24Chen, Y. MoP-OD-22Chen, Y. MoP-OD-34Chen, Y. MoP-OD-34Chen, Y. TuP-CR-12Chen, Y. TuP-CR-12Chen, Y. TuP-CR-27Chen, Y. TuP-GR-31Chen, Y. TuP-GR-38Chen, Y.-A. OD11-5Chen, Y.-C. GR12-6Chen, Y.-C. MoP-GR-13Chen, Y.-P. J3-1Chen, Y.T. TuP-ED-33Chen, Y.-Y. ThP-OD-13Chen, Z. CR12-5Chen, Z. CR13-3Chen, Z. CR16-3Chen, Z. CR4-6Chen, Z. ED14-1Chen, Z. GR16-1Chen, Z. MoP-OD-34Chen, Z. OD10-6Chen, Z. TuP-CR-12Chen, Z. TuP-GR-38Chen, Z. TuP-OD-5Cheng, C.-F. ED7-5Cheng, C.-F. OD13-5Cheng, C.-F. TuP-CR-17

Cheng, C.-F. TuP-GR-23Cheng, C.-F. TuP-GR-37Cheng, C.-M. TuP-CR-17Cheng, C.-M. TuP-GR-23Cheng, K. ED13-7Cheng, L. ED12-8Cheng, Y. MoP-OD-29Cheng, Y.-J. GR16-8Cheng, Z. ED14-7Cheng, Z. MoP-GR-20Cheng, Z. OD16-6Chenot, S. J5-1Chenot, S. MoP-CR-15Chenot, S. OD4-5Chenot, S. OD6-2Cheong, H. OD11-3Cheung, Y. OD7-4Cheung, Y. OD7-5Chevolleau, T. TuP-OD-29Cheze, C. CR1-4Chèze, C. GR14-5Chiang, H.-C. TuP-OD-20Chiaruttini, F. OD4-5Chichibu, S.F. CR6-6Chichibu, S.F. GR10-4Chichibu, S.F. GR10-5Chichibu, S.F. J6-3Chichibu, S.F. MoP-OD-4Chichibu, S.F. OD14-2Chichibu, S.F. OD7-3Chien, F.-C. OD7-7Chiu, K.-A. MoP-GR-15Cho, C.-Y. MoP-OD-13Cho, C.-Y. ThP-ED-21Cho, H.K. OD15-4Cho, J. MoP-OD-16Cho, J.-H. ThP-CR-3Cho, J.-H. ThP-CR-5Cho, J.-H. TuP-OD-26Cho, M. MoP-OD-16Cho, S. MoP-OD-16Cho, Y. CR2-3Cho, Y. ED1-3Cho, Y. OD1-3Cho, Y.-H. MoP-CR-27Cho, Y.-H. OD12-5Cho, Y.-H. ThP-CR-3Cho, Y.-H. ThP-CR-5Cho, Y.-H. ThP-OD-9Cho, Y.-H. TuP-CR-10Cho, Y.-H. TuP-OD-26Cho, Y.-H. TuP-OD-30Choi, C. MoP-GR-12Choi, D. J7-2Choi, D. TuP-OD-26Choi, D. TuP-OD-30

DRAFT


Choi, H. ED8-6Choi, H. OD12-6Choi, H. OD7-4Choi, H. OD7-5Choi, J. GR13-2Choi, J. MoP-OD-17Choi, M.-H. MoP-CR-27Choi, M.-H. ThP-CR-5Choi, S. MoP-CR-27Choi, S. OD12-5Choi, S. TuP-CR-10Choi, S. TuP-OD-30Choi, S.-Y. J6-5Choi, S.-Y. ThP-GR-24Choi, S.-Y. TuP-OD-17Choi, S.-Y. TuP-OD-18Choi, U. GR5-4Choi, U. ThP-ED-32Choi, U. ThP-GR-32Choi, U. TuP-OD-23Choi, W. MoP-ED-5Choi, W.-J. TuP-CR-11Choi, Y. TuP-OD-3Chokawa, K. CR5-2Chokawa, K. ThP-CR-34Chonan, H. MoP-ED-3Chou, K.-P. J3-1Chou, M.M. TuP-GR-23Chou, W.-C. MoP-GR-28Chou, W.-C. MoP-GR-29Chow, T.-S. ThP-CR-21Chow, T.-S.P. ED1-6Chow, T.-S.P. GR12-8Chowdhury, A. ThP-ED-28Chowdhury, A.M. OD3-2Chowdhury, A.M. ThP-ED-29Chowdhury, M.F. GR6-6Chowdhury, N. ED13-7Chrastina, D. TuP-GR-24Chrastina, D. TuP-GR-4Chrastina, D. TuP-GR-5Christen, J. CR1-6Christen, J. CR12-5Christen, J. CR13-6Christen, J. CR14-4Christen, J. CR2-5Christen, J. CR4-6Christen, J. J4-7Christen, J. OD1-5Christen, J. OD12-4Christensen, N.E. OD5-5Christensen, N.E.

ThP-OD-27Christian, G. TuP-CR-6Christiansen, S.H.

ThP-GR-22

Chumbes, E. GR12-5Chung, T.-H. TuP-CR-10Chuo, C.-C. OD16-6Church, S.A. CR5-7Church, S.A. TuP-CR-2Chyi, J.-I. GR12-6Ciechanowicz, P. ThP-GR-36Clemens, B.M. ThP-GR-14Clinton, E. ED14-3Clinton, E. GR16-3Clinton, E. ThP-ED-25Cohen, D. OD8-5Collazo, R. CR5-4Collazo, R. CR7-7Collazo, R. CR8-7Collazo, R. ED12-1Collazo, R. ED14-2Collazo, R. GR1-1Collazo, R. GR1-2Collazo, R. GR1-3Collazo, R. GR2-1Collazo, R. J5-5Collazo, R. OD16-1Collazo, R. ThP-ED-30Colombelli, R. CR15-6Colvin, J. J7-1Compean Garcia, V.D.

MoP-CR-22Compean Garcia, V.D.

ThP-GR-23Compean Garcia, V.D.

TuP-OD-15Comyn, R. ThP-GR-19Concordel, A. GR6-5Cong, G. TuP-OD-24Contreras, S. J5-1Contreras, S. MoP-CR-3Contreras, S. ThP-CR-22Cora, I. MoP-CR-17Cordier, Y. OD4-5Cordier, Y. ThP-GR-19Coudevylle, J.-R. J3-6Coulon, P.-M. CR10-2Coulon, P.-M. J1-5Coulon, P.-M. ThP-OD-21Courville, A. MoP-CR-15Craven, M.D. OD5-1Crawford, M.H. J2-1Crawford, M.H. MoP-CR-35Cristoloveanu, S.

TuP-ED-19Cros, A. CR2-4Cros, A. ThP-GR-35Cros, A. TuP-GR-33Cruz Hernandez, E.

ThP-GR-23

Cruz Hernandez, E.TuP-OD-15

Cubukcu, E. OD7-7Cunningham, D.W. ED1-1Cuscó, R. J6-2Cwiklinski, M. ED4-2Czernecki, R. CR7-6

— D —Dadgar, A. CR13-6Dadgar, A. CR2-5Dadgar, A. CR6-3Dadgar, A. CR6-5Dadgar, A. CR8-2Dadgar, A. GR7-6Dadgar, A. J4-7Dadgar, A. OD1-5Dadgar, A. OD2-4Dagher, R. J3-3Dai, J.-J. MoP-GR-28Dai, J.-J. MoP-GR-29Dai, Q. ED10-2Dai, Q. TuP-ED-29Dai, S. ED4-4Dai, X. J1-7Daicho, H. GR13-3Dalcanale, S. ED6-2Dalmau, R. GR5-5Damilano, B. CR13-4Damilano, B. CR15-6Damilano, B. J1-2Damilano, B. J1-5Damilano, B. J5-1Damilano, B. MoP-CR-3Damilano, B. OD10-5Damilano, B. OD4-5Damilano, B. OD6-2Damilano, B. ThP-CR-22Dammann, M. ED4-2Darakchieva, V. TuP-GR-17Darakchieva, V. TuP-GR-32Das, S. J1-7DasGupta, A. MoP-ED-14DasGupta, A. TuP-ED-14DasGupta, N. MoP-ED-14DasGupta, N. TuP-ED-14Dash, A. ED7-6Daudin, B. CR2-4Daudin, B. GR6-4Daudin, B. GR6-5Daudin, B. TuP-GR-33Daul, L. ED7-1Daul, L. TuP-OD-13David, A. OD5-1Davies, M.J. OD14-1Dawson, P. CR1-3

DRAFT


Dawson, P. CR5-7Dawson, P. TuP-CR-2Dawson, P. TuP-CR-6De Mierry, P. GR13-5De Santi, C. ED11-1De Santi, C. OD14-5De Souza, M.M. ThP-ED-1Deb, S. MoP-ED-14Debray, M. J4-7Deckert, M. OD2-4Decoutere, S. ED8-3Decoutere, S. GR12-7Degroote, S. ThP-GR-38Deki, M. ED1-4Deki, M. ED5-1Deki, M. GR16-5Deki, M. ThP-CR-10DeMierry, P. OD12-7Dempewolf, A. OD12-4DenBaars, S. OD12-7DenBaars, S. OD8-5DenBaars, S.P. GR14-3DenBaars, S.P. OD1-6DenBaars, S.P. OD2-3Denbaars, S.P. TuP-OD-9Deng, G. MoP-GR-38Deng, G. TuP-OD-11Deppe, M. CR6-5Derluyn, J. ThP-GR-38Detchprohm, T. GR10-2Deveaud, B. CR15-7Deveaud, B. ThP-CR-1Dharmarasu, N. MoP-CR-31Dharmarasu, N. ThP-ED-26Dharmawan, A. OD2-2Dharmawan, A. OD7-6Dhasiyan, A. TuP-GR-28Dhasiyan, A. TuP-GR-29di Carlo, A. OD2-2Di Carlo, A. OD5-4Di Vito, A. OD5-4Dickerson, J.R. MoP-CR-35Didenko, S. MoP-OD-7Didenko, S. TuP-GR-25Didenko, S. TuP-GR-7Dietl, T. ED14-4Dimakis, E. ThP-CR-13Dimitrakopulos, G.P.

ThP-CR-13Dimitrakopulos, G.P.

TuP-CR-29Dimitrijev, S. MoP-ED-24Dimitrijev, S. ThP-ED-14D’Inca, G. OD2-5Ding, B. TuP-CR-2Ding, S. ThP-CR-19

Ding, T. OD11-1Dinh, D.V. GR13-4Dinh, D.V. GR7-2Disseix, P. CR6-2Dittmar, A. GR5-1Divitini, G. ThP-CR-25Dluzewski, P. GR6-1Dmukauskas, M. ThP-CR-18Dobrocka, E. GR12-1Dobrocka, E. MoP-GR-3Dobrovolskas, D. CR4-4Dobrovolskas, D. CR4-5Dobrovolskas, D. MoP-GR-5Dobrovolskas, D. MoP-GR-7Dobrovolskas, D. ThP-CR-18Dobrovolskas, D. ThP-CR-6Dogmus, E. MoP-ED-4Dolmanan, S.B. ED12-5Dolmanan, S.B. TuP-OD-7Domagala, J. GR4-3Domagala, J.Z. GR6-1Domagala, J.Z. TuP-CR-15Dong, B. ED14-7Doolittle, W.A. ED14-3Doolittle, W.A. GR16-3Doolittle, W.A. ThP-ED-25Doundoulakis, G. ThP-GR-13Dowling, K.M. ED7-2Downey, B. GR12-5Doyennette, L. CR15-6Doyennette, L. CR6-2Doyennette, L. OD10-5Doyennette, L. OD4-5Driad, R. OD3-5Driad, R. ThP-OD-4Drobny, J. ED11-5Drozdz, P.A. CR3-2Du, G. MoP-GR-38Duan, R. MoP-GR-14Duboz, J.-Y. CR15-6Duboz, J.-Y. J5-1Duboz, J.-Y. OD10-5Dubreuil, R. ThP-GR-25Dubreuil, R. ThP-GR-26Dubrovskii, V. J1-1Dubrovskii, V. J3-6Dudley, M. ThP-GR-1Duelk, M. OD9-4Dupuis, R.D. GR10-2Durand, C. J1-7Durand, C. J7-5Durand, C. J7-8Durand, C. TuP-OD-29Dussaigne, A. OD6-2Dussaigne, A. TuP-GR-10Dutta, G. TuP-ED-14

Dwason, P. CR7-5Dyer, D. OD4-7Dziecielewski, I. ThP-GR-2Dziecielewski, I. ThP-GR-3

— E —Ebara, K. GR10-4Ebara, K. GR10-5Ebata, K. OD16-3Eberhard, R. GR1-7Ebert, P. CR11-5Eddy Jr., C.R. TuP-GR-6Eddy, C. GR16-2Eddy, C.R. J2-3Edgar, J. J6-2Edo, M. CR2-3Edo, M. CR6-6Edo, M. ED2-5Edo, M. TuP-ED-5Edwards, P. OD4-7Edwards, P.R. CR10-1Edwards, P.R. CR12-7Edwards, P.R. CR4-2Edwards, P.R. CR7-5Edwards, P.R. GR5-6Edwards, P.R. J4-2Egawa, T. ED1-5Egawa, T. ED3-3Egawa, T. J4-4Egawa, T. TuP-ED-25Egawa, T. TuP-ED-28Egawa, T. TuP-OD-14Eickhoff, M. CR14-6Einfeldt, S. OD14-4Einfeldt, S. OD14-6Einfeldt, S. OD15-4Einfeldt, S. TuP-OD-4Einstein, T.L. GR10-6Eisele, H. CR11-5Ekielski, M. ED12-3Ekielski, M. TuP-ED-32El Kurdi, M. CR15-6El Kurdi, M. OD10-5Elafandy, R. OD8-3Ema, K. GR15-1Ema, K. GR15-4Endo, K. MoP-OD-19Endo, K. TuP-OD-24Engel, Z. GR16-3Engel, Z. ThP-ED-25Enslin, J. GR13-7Enslin, J. GR5-6Enslin, J. J1-5Enslin, J. J4-2Enslin, J. J4-3Enslin, J. OD14-6

DRAFT


Enslin, J. OD14-7Eom, S. TuP-ED-21Eom, S.-K. ED14-6Eom, S.-K. TuP-ED-11Eom, S.-K. TuP-ED-15Eom, S.-K. TuP-ED-2Erine, C. ED13-1van Erp, R. ED9-3Eryu, O. MoP-CR-21Even, A. OD6-2Eymery, J. J1-7Eymery, J. J7-5Eymery, J. J7-8Ezaki, T. GR9-3

— F —Fabes, S. CR16-7Fabris, E. ED11-1Fada, J. GR11-7Fahle, D. GR1-6Fahle, D. GR12-7Fan Chian, S.-C. MoP-ED-25Fan, B. TuP-OD-5Fan, S. MoP-GR-1Fan, W. MoP-GR-23Fan, W.-C. MoP-GR-28Fan, W.-C. MoP-GR-29Farah, J. ThP-GR-1Fariza, A. CR8-2Fatahilah, M. ED10-5Fatahilah, M. OD11-7Fay, P. ED10-1Fedorov, A. TuP-GR-24Fedorov, A. TuP-GR-4Fedorov, A. TuP-GR-5Feduniewicz-Zmuda, A.

OD1-2Feezell, D. J2-1Feezell, D. MoP-GR-23Feigelson, B.N. ED2-3Feix, F. GR14-5Feldberg, N. CR2-4Feldberg, N. TuP-GR-33Feneberg, M. CR6-5Feng, L. ThP-OD-28Feng, M. OD9-2Feng, Y. GR10-1Feng, Y. GR8-6Feng, Y. MoP-OD-34Feng, Y. TuP-CR-12Feng, Y. TuP-GR-38Feng, Z. OD10-6Ferhatovic, A. OD9-4Fernández-Garrido, S.

GR14-6Fernández-Garrido, S.

GR6-3Fernando-Saavedra, A. J5-2Ferret, P. J1-1Ferret, P. TuP-GR-10Feuillet, G. GR13-5Feuillet, G. J3-3Feuillet, G. TuP-GR-10Fiederle, M. GR12-2Fijalkowski, M. GR3-4Fijalkowski, M. GR3-6Fijalkowski, M. GR9-2Fijalkowski, M. GR9-4Fijalkowski, M. GR9-6Filoche, M. CR1-5Filoche, M. CR1-7Fimland, B.-O. MoP-OD-35Fimland, B.-O. ThP-GR-37Fletcher, P. CR4-2Flissikowski, T. GR14-5Flissikowski, T. GR14-6Florini, N. ThP-GR-15Floyd, R. ThP-ED-31Fogarassy, Z. MoP-CR-17Foldyna, M. J1-7Foltyn, M. ED14-4Foltyn, M. ThP-ED-22Fontenot, S. ED7-3Foo, S. MoP-CR-31Forman, C. OD8-5Foronda, H.M. GR13-7Foroozandeh, F. ED7-3Forrest, R. GR10-2Foundoulaki Salhin, E.

ThP-GR-13Francis, D. CR16-7Frank, K. ED10-3Frank, K. ED10-5Frayssinet, E. CR15-6Frayssinet, E. GR11-3Frayssinet, E. OD10-5Frayssinet, E. ThP-GR-19Frei, K. GR12-2Freitas, J.A. CR6-7Freitas, J.A. J2-3French, R. GR11-7Frentrup, M. CR5-6Frentrup, M. CR5-7Frentrup, M. MoP-CR-18Freysoldt, C. GR10-7Friedrich, J. MoP-ED-17Friedrich, J. TuP-CR-30Fritze, S. CR6-3Fu, W. ED8-6Fu, W. OD11-1Fu, W. OD12-6Fu, Y. TuP-GR-16

Fuchs, F. ThP-OD-4Fuchs, G. OD1-3Fudetani, T. OD1-4Fujie, F. CR7-3Fujii, K. OD13-7Fujii, T. TuP-CR-22Fujii, Y. MoP-CR-33Fujikawa, K. CR2-6Fujikawa, S. OD15-2Fujikura, H. CR11-1Fujikura, H. ED1-2Fujikura, H. GR3-1Fujimori, S. ThP-GR-27Fujimoto, N. TuP-GR-2Fujimoto, S. ThP-GR-7Fujimoto, T. GR3-1Fujimoto, Y. MoP-CR-24Fujimoto, Y. TuP-CR-13Fujimoto, Y. TuP-ED-1Fujimoto, Y. TuP-ED-7Fujioka, H. GR1-4Fujioka, H. OD1-4Fujioka, H. ThP-ED-9Fujioka, H. ThP-GR-11Fujishiro, H. OD15-2Fujita, T. CR10-3Fujita, Y. MoP-CR-34Fujiwara, S. GR6-2Fujiwara, Y. CR4-1Fujiwara, Y. GR8-2Fujiwara, Y. GR8-3Fujiwara, Y. MoP-OD-30Fujiwara, Y. OD6-4Fujiwara, Y. OD7-2Fukuda, K. TuP-ED-12Fukuda, T. GR9-7Fukushima, H. CR10-3Fukushima, H. ED1-4Fukuyama, H. GR11-7Fukuyama, H. GR11-8Funato, M. CR12-1Funato, M. CR3-4Funato, M. GR13-1Funato, M. J5-3Funato, M. OD6-3Furukawa, M. MoP-CR-24Furukawa, Y. ED2-6Furuoka, K. ED3-3Furuoka, K. TuP-ED-28Furuta, H. OD10-3Furuta, K. ED3-7Furuya, K. MoP-ED-3Fuwa, R. OD8-2

— G —Gallagher, J.C. J2-3

DRAFT


Gamachi, W. TuP-CR-23Gamov, I. CR7-7Gamov, I. GR1-7Gamov, I. GR5-1Ganguly, S. ED10-6Ganguly, S. MoP-ED-15Ganguly, S. ThP-CR-24Ganguly, S. ThP-ED-17Ganguly, S. ThP-ED-37Ganguly, S. ThP-ED-40Ganguly, S. ThP-ED-5Ganguly, S. TuP-ED-30Ganguly, S. TuP-ED-31Gao, G. GR14-6Gao, H. ED4-4Gao, H. MoP-ED-2Gao, H. OD9-2Gao, K. CR13-3Gao, K. CR13-5Gao, K. ThP-CR-11Gao, X. ThP-GR-4Garcia Hernandez, S.A.

MoP-CR-22Garg, M. ED14-8Garg, R. ED6-5Garg, T. ThP-ED-23Garrett, G. CR12-6Garro, N. CR2-4Garro, N. ThP-GR-35Garro, N. TuP-GR-33Gärtner, G. GR1-7Gas, K. ED14-4Gas, K. GR6-1Gas, K. MoP-CR-29Gas, K. ThP-ED-22Gas, K. TuP-CR-15Gaubas, E. ThP-ED-24Gautier, E. J7-5Gayral, B. CR15-6Gayral, B. GR6-5Gayral, B. J7-5Gayral, B. J7-8Gayral, B. OD10-5Ge, M. MoP-ED-23Ge, W. CR13-3Ge, W. CR8-3Ge, W. GR16-1Geelhaar, L. GR6-3Geelhaar, L. J3-6Geens, K. ED8-3Geens, K. GR12-7Geens, K. MoP-CR-16Gelzinyte, K. CR15-4Georgakilas, A. ThP-GR-13Germain, M. ThP-GR-38Ghazaryan, A. TuP-OD-4

Gheeraert, E. TuP-OD-29Giaremis, S. TuP-CR-33Gibasiewicz, K. CR3-2Gibasiewicz, K. OD1-7Gibasiewicz, K. ThP-OD-14Gibasiewicz, K. ThP-OD-18Gibasiewicz, K. ThP-OD-29Gibson, B. ThP-CR-10Gieraltowska, S. J3-5Gil, B. J1-2Gil, B. J5-1Gil, B. J6-2Gil, B. MoP-CR-3Gil, B. ThP-CR-22Gil, E. J1-1Ginet, P. OD13-6Glaab, J. OD14-4Glaab, J. OD14-6Glaab, J. OD15-4Glaser, C. J2-1Glaser, E.R. CR6-7Glauser, M. CR1-1Goel, P. ThP-ED-23Gogneau, N. J3-6Golaszewska-Malec, K.

ED12-3Golaszewska, K. J3-5Goldhahn, R. CR6-5Gong, S.-H. ThP-CR-3Gong, S.-H. TuP-OD-26Gong, S.-H. TuP-OD-30Gong, Y. ThP-CR-2Gonzalez-Szwacki, N.

ED14-4Gorbunov, R. ThP-OD-33Gorbunov, R. TuP-GR-1Gorczyca, I. MoP-CR-34Gorczyca, I. OD5-5Gorczyca, I. ThP-OD-27Gorsak, C.A. ED2-3Goto, N. J7-3Goto, N. ThP-GR-10Gouda, R. GR3-3Grabianska, K. GR4-3Graham, S. CR16-4Graham, S. ED9-2Grandjean, N. CR1-1Grandjean, N. CR1-2Grandjean, N. CR14-1Grandjean, N. CR15-7Grandjean, N. GR12-3Grandjean, N. GR12-4Grandjean, N. J7-8Grandjean, N. OD12-1Grandjean, N. OD2-1Grandjean, N. ThP-OD-10

Grandusky, J. ThP-OD-6Grange, T. OD4-3Granz, T. ED7-1Granz, T. OD2-2Gregorkiewicz, T. GR8-2Gregušová, D. TuP-ED-8Greif, L.A. CR14-6Greif, L.A. ThP-OD-31Grekhov, M.M. TuP-GR-13Grenier, A. CR2-1Grenier, V. J7-8Grieger, L. MoP-CR-19Griffin, P.H. TuP-OD-25Grinys, T. MoP-GR-5Grinys, T. ThP-ED-24Grodzicki, M. ThP-GR-36Groeseneken, G. ED8-3Gromovyi, M. CR6-2Gruart, M. CR2-4Gruart, M. GR6-4Gruart, M. TuP-GR-33Grzanka, E. CR7-6Grzanka, E. ThP-OD-27Grzanka, E. TuP-CR-16Grzanka, S. OD1-7Grzanka, S. OD13-1Grzanka, S. OD4-6Grzanka, S. OD9-5Grzanka, S. ThP-OD-14Grzanka, S. ThP-OD-18Grzanka, S. ThP-OD-29Grzegory, I. GR3-4Grzegory, I. GR3-6Grzegory, I. GR9-2Grzegory, I. GR9-4Grzegory, I. GR9-6Grzegory, I. ThP-GR-2Grzegory, I. ThP-GR-3Grzonka, J. ED12-3Guan, N. J1-7Guan, N. J3-6Guan, N. J7-5Guan, Y. CR5-4Guan, Y. ED14-2Guan, Y. GR1-3Guan, Y. J5-5Gucmann, F. ED11-5Gucmann, F. GR12-1Gucmann, F. MoP-GR-3Gueorguiev, G. MoP-GR-9Guidry, M. ED11-7Guillet, T. CR15-6Guillet, T. CR6-2Guillet, T. OD10-5Guillet, T. OD4-5Guiney, I. ED6-4

DRAFT


Guiot, E. OD6-2Gülink, J. OD11-4Gülink, J. OD11-7Gülink, J. OD2-2Gülink, J. TuP-OD-12Gülink, J. TuP-OD-13Gundimeda, A. ED7-6Gundimeda, A. ThP-OD-30Gunji, Y. GR15-6Guo, Q. CR5-4Guo, Q. ED14-2Guo, Q. GR1-1Guo, Q. GR1-3Guo, S. CR12-5Guo, S. ED14-1Guo, S. J5-6Guo, W. ED8-3Guo, W. GR12-7Guo, W. OD11-6Guo, Y. GR11-2Guo, Y. MoP-OD-2Guo, Z. ED1-6Guo, Z. ThP-CR-21Gupta, C. ED11-2Gupta, C. ED11-7Gupta, C. GR14-4Gupta, G. ED7-6Gupta, G. MoP-GR-36Gupta, G. ThP-ED-23Gupta, G. ThP-OD-30Gupta, K. MoP-GR-16Gupta, P. OD15-3Gusev, A.S. TuP-GR-13Gustafsson, A. GR2-3Gustafsson, A. J7-1Guttmann, M. CR11-4Guttmann, M. CR12-2Guttmann, M. OD15-3Guttmann, M. OD16-5Guttmann, M. TuP-OD-4Guziewicz, M. ED12-3Gwardys-Bak, A. GR4-3

— H —Haasmann, D. MoP-ED-24Habel, F. TuP-CR-29Habermann, N. TuP-OD-19Hagedorn, S. CR10-2Hagedorn, S. CR7-7Hagedorn, S. GR7-1Hagedorn, S. J1-5Hagedorn, S. OD16-5Hagedorn, S. OD3-3Hagi, Y. ThP-CR-20Haglund, Å. OD14-7Hahn, L. OD3-5

Hahn, L. ThP-OD-4Hahn, W. CR1-5Hainey Jr., M. GR10-8Hajdel, M. OD1-2Hájek, F. ThP-GR-15Halagacka, L. J1-7Haller, C. CR15-7Haller, C. OD12-1Haller, C. ThP-OD-10Hamachi, T. CR7-2Hamada, T. J2-5Hamaguchi, T. OD8-1Hamaji, Y. MoP-CR-34Hamaya, S. GR11-7Hammersley, S. CR5-7Hammersley, S. CR7-5Hammersley, S. TuP-CR-6Han, D.-P. OD5-3Han, D.-P. ThP-GR-12Han, D.-P. ThP-OD-23Han, J. GR13-2Han, J. MoP-ED-24Han, J. MoP-OD-15Han, J. OD12-2Han, J. OD8-3Han, J. ThP-ED-14Han, J. ThP-ED-32Han, L. MoP-OD-25Han, N. J6-5Han, N. ThP-GR-24Han, S.-W. ED14-6Han, S.-W. TuP-ED-15Han, X. MoP-GR-38Han, X. MoP-OD-22Han, X. TuP-OD-11Han, Y. MoP-OD-25Han, Y. OD12-4Han, Y. ThP-GR-34Han, Z. ED7-3Hanafusa, H. ED2-2Hanawa, H. MoP-ED-10Hangleiter, A. CR3-1Hangleiter, A. CR3-3Hangleiter, A. J3-2Hangleiter, A. J4-6Hao, G.-D. MoP-CR-14Hao, H. MoP-GR-1Hao, Y. CR16-6Hao, Y. ED12-7Hao, Y. ED4-5Hao, Y. ED5-5Hao, Y. MoP-ED-11Hao, Y. MoP-ED-9Hao, Y. ThP-ED-11Hao, Y. ThP-ED-13Hao, Y. ThP-ED-38

Hao, Y. TuP-ED-20Hao, Y. TuP-GR-16Hao, Z. OD12-4Hao, Z. ThP-GR-34Haque, M. MoP-CR-10Hara, K. J6-3Harada, H. TuP-OD-14Harada, S. CR7-3Hardy, M. GR12-5Harmand, J.-C. J3-6Harris, J.S. CR8-7Hartmann, C. GR5-1Hartmann, J. ED10-3Hartmann, J. J3-2Hartmann, J. J3-4Harvey, T. MoP-GR-32Hascik, S. TuP-ED-8Hasegawa, R. ThP-OD-6Hasegawa, S. ThP-GR-27Hasegawa, S. ThP-GR-29Hasegawa, Y. TuP-CR-31Hasenohrl, S. GR12-1Hasenöhrl, S. MoP-CR-17Hasenöhrl, S. MoP-GR-3Hasenöhrl, S. TuP-ED-8Hashiguchi, Y. CR3-5Hashimoto, A. GR7-3Hashimoto, A. TuP-GR-18Hashimoto, T. GR4-2Hashizume, T. CR11-3Hashizume, T. ED11-5Hashizume, T. ED13-4Hashizume, T. ED3-5Hashizume, T. TuP-ED-27Hassan, Z.B. TuP-OD-10Hatanaka, Y. TuP-OD-2Hattori, S. MoP-CR-32Hatui, N. GR14-4Haughn, C. CR12-6Hayashi, D. J5-4Hayashi, K. OD8-1Hayashi, Y. CR2-6Hayashi, Y. GR7-4Hayashi, Y. GR7-5He, J. ED11-3He, J. MoP-ED-2He, L. MoP-ED-20He, L. MoP-ED-20He, Y. ED5-5He, Y. MoP-OD-9Heilmann, M. ThP-GR-22Heimdal, C. ThP-GR-22Heitmann, J. GR1-7van Helvoort, A.T.

ThP-GR-22Hemeret, F. OD2-5

DRAFT


Hemmi, M. MoP-GR-6Henning, P. CR3-3Hernandez Arteaga, J.

MoP-OD-32Hetzl, M. CR11-6Heuken, L. ED13-5Heuken, M. GR1-6Heuken, M. TuP-ED-24Heuken, P. ED13-5Hickman, A. TuP-ED-23Hickman, A.L. ED13-8Higashi, S. ED2-2Hikosaka, T. ED3-6Hikosaka, T. OD11-2Hikosaka, T. OD11-3Hikosaka, T. OD7-2Hilbrich, K. TuP-OD-4Hirahara, S. OD6-1Hirai, M. TuP-GR-20Hirama, K. J6-7Hirano, A. MoP-OD-4Hirano, A. OD14-2Hirano, A. TuP-OD-2Hirano, K. CR5-5Hirayama, H. CR12-4Hirayama, H. GR11-4Hirayama, H. GR13-8Hirayama, H. MoP-OD-6Hirayama, H. OD10-3Hirayama, H. OD14-3Hirayama, H. OD15-2HIrayama, H. OD15-5Hirayama, H. OD15-6Hirayama, H. OD16-2Hirayama, H. OD4-3Hirayama, H. ThP-OD-7Hirayama, H. TuP-GR-8Hirayama, H. TuP-OD-1Hiroi, S. TuP-CR-27Hiroki, M. ED12-6Hirose, S. MoP-CR-13Hirotani, J. ED10-4Hitchcock, C. ThP-CR-21Hite, J.K. ED2-3Hite, J.K. J2-3Hjort, F. OD14-7Ho, Y.-L. TuP-OD-35Hoang, L. MoP-GR-28Hoang, L. MoP-GR-29Hoeiaas, I. MoP-OD-35Hoerich, F. J4-7Hoffmann, A. CR13-4Hoffmann, A. CR13-6Hoffmann, A. CR14-6Hoffmann, A. CR6-3Hoffmann, A. CR8-2

Hoffmann, A. OD14-1Hoffmann, M. OD9-1Hoffmann, M.P. CR6-3Hoffmann, M.P. CR8-2Hoffmann, M.P. OD14-1Hoffmann, T. CR11-6Holder, A. CR9-7Holder, A. MoP-GR-31Holmes, M. CR13-1Holmes, M. CR13-3Holmes, M. CR13-5Holmes, M. OD10-1Holmes, M. ThP-CR-11Holmes, M.J. TuP-OD-25Hommel, D. ED14-4Hommel, D. GR6-1Hommel, D. ThP-GR-36Hommel, D. TuP-CR-15Honda, T. ThP-OD-12Honda, T. TuP-ED-12Honda, Y. CR5-2Honda, Y. ED1-4Honda, Y. ED10-4Honda, Y. ED5-1Honda, Y. ED9-2Honda, Y. GR10-4Honda, Y. GR13-4Honda, Y. GR16-5Honda, Y. J6-6Honda, Y. MoP-OD-4Honda, Y. OD11-3Honda, Y. OD14-2Honda, Y. TuP-GR-2Honda, Z. MoP-CR-10Honda, Z. MoP-CR-25Hong, B.-S. ThP-OD-13Hong, I. MoP-OD-17Hong, K.-B. J1-4Hong, K.-B. MoP-OD-12Hong, K.-B. MoP-OD-5Honma, Y. ThP-OD-6Hono, K. CR2-3Hoo, J. J5-6Horenburg, P. CR3-3Horenburg, P. J4-6Hori, M. TuP-GR-28Hori, M. TuP-GR-29Hörich, F. CR8-2Hörich, F. GR7-6Horikiri, F. ED1-2Horikiri, F. ED5-2Horikiri, F. MoP-ED-1Horikiri, F. ThP-ED-7Horio, K. MoP-ED-10Horio, K. MoP-ED-12Horita, M. CR10-5

Horita, M. CR11-1Horita, M. CR11-2Horita, M. CR16-1Horita, M. CR16-2Horita, M. ED6-3Horng, R. MoP-OD-1Horng, R.-H. OD11-5Horng, R.-H. ThP-OD-3Horton, M.K. CR7-5Hoshii, T. ED8-5Hoshii, T. J2-5Hoshino, T. TuP-ED-17Hosoi, T. ED3-2Hosoi, T. TuP-ED-3Hosoi, T. TuP-ED-4Hosomi, D. TuP-ED-28Hospodková, A. ThP-GR-15Hossain, M. CR12-4Hotta, K. ED12-2Hou, B. ED12-7Hou, B. ED5-5Hou, B. MoP-CR-26Hou, B. ThP-ED-11Hou, B. ThP-ED-38Hou, B. TuP-ED-20Hourahine, B. CR10-1Hourahine, B. ThP-CR-4Howell-Clark, J.R. ED1-6Hsin, Y. ThP-ED-36Hsin, Y.-m. MoP-ED-25Hsu, L.-H. GR16-8Hsu, Y.-C. J3-1Hsueh, W.-J. GR12-6Hu, C.-W. MoP-GR-28Hu, C.-W. MoP-GR-29Hu, H. MoP-OD-8Hu, N. GR13-4Hu, X. J1-6Hu, X. ThP-CR-9Hu, X. ThP-ED-31Hu, X. ThP-OD-28Hu, Z. ED1-3Hua, M. CR16-5Hua, M. ED11-3Huang, C.-F. OD13-3Huang, C.-P. MoP-GR-16Huang, C.-Y. J1-4Huang, H. MoP-OD-12Huang, H.-C. OD13-5Huang, H.-C. TuP-GR-37Huang, J. MoP-CR-30Huang, J. TuP-ED-10Huang, J.J. TuP-ED-33Huang, K.-L. OD7-7Huang, R. ThP-CR-19Huang, S. MoP-ED-22

DRAFT


Huang, S.W. TuP-OD-8Huang, T. ThP-ED-19Huang, Y. MoP-ED-20Huang, Y. OD9-2Hubácek, T. ThP-GR-15Hui, S. OD7-4Hultin, O. J7-1Hultman, L. J2-2Humphreys, C. ED6-4Humphreys, C. TuP-CR-6Humphreys, C.J. CR1-3Humphreys, C.J. CR5-7Humphreys, C.J. CR7-5Hurni, C.A. OD5-1Husale, S. ThP-OD-30Husekova, K. ED11-5Hussian, K. ThP-ED-31Hussin, H.B. TuP-OD-10Hwang, D. OD2-3Hwang, I. TuP-ED-21Hwang, J. TuP-GR-14Hwang, S. CR12-7Hwang, S. ThP-ED-31

— I —Iacopi, A. MoP-ED-24Ibrahim, N. TuP-OD-9Ichikawa, S. CR4-1Ichikawa, S. GR8-2Ichikawa, S. GR8-3Ichikawa, S. J5-3Ichikawa, S. OD6-4Ide, T. J2-5Ide, T. MoP-ED-21Ide, T. MoP-ED-3Iguchi, H. CR6-6Ihira, Y. ThP-ED-33Iida, D. OD13-6Iida, D. OD6-1Iida, K. CR14-7Iida, K. GR2-6Iida, K. ThP-GR-10Iida, K. ThP-OD-24Iizuka, K. MoP-CR-20Ikarashi, N. TuP-GR-28Ikeda, H. GR3-3Ikeda, J. GR5-2Ikeda, J. OD16-4Ikeda, J. OD16-7Ikeda, K. OD11-2Ikeda, M. MoP-OD-14Ikeda, M. TuP-CR-7Ikeda, M. TuP-CR-8Ikeda, M. TuP-CR-9Ikenoue, H. CR8-4Ikeuchi, H. GR9-5

Ikeyama, K. J7-4Im, K.-S. ED10-2Im, K.-S. TuP-ED-19Imabeppu, H. GR1-4Imada, S. GR11-5Imada, S. MoP-CR-2Imai, D. J7-3Imai, T. MoP-GR-6Imai, Y. CR5-3Imai, Y. J7-3Imam, M. ED6-5Imanishi, M. CR5-3Imanishi, M. CR7-2Imanishi, M. GR15-6Imanishi, M. GR15-7Imanishi, M. GR4-4Imanishi, M. GR4-6Imanishi, M. ThP-GR-28Imaoka, N. MoP-ED-21Imlau, R. J4-6Imura, M. CR4-3Imura, M. TuP-CR-32Imura, N. MoP-CR-1Inaba, T. OD6-4Inatomi, Y. GR10-6Inatomi, Y. MoP-GR-34Inomoto, R. CR5-5Inoue, S.-i. MoP-CR-14Inoue, Y. GR10-4Inoue, Y. GR10-5Inoue, Y. GR8-5Ippommatsu, M. TuP-OD-2Ipponmatsu, M. MoP-OD-4Ipponmatsu, M. OD14-2Ipsen, A. ThP-CR-2Irmscher, K. CR7-7Irmscher, K. GR1-7Irmscher, K. GR5-1Irokawa, Y. CR7-4Irokawa, Y. TuP-CR-27Irving, D.L. CR8-7Irving, D.L. GR1-2Isemura, M. GR15-6Ishibashi, A. J7-6Ishibashi, K. GR15-6Ishibashi, S. CR6-6Ishiguro, T. OD15-2Ishii, R. CR12-1Ishikawa, K. TuP-GR-28Ishikawa, K. TuP-GR-29Ishikawa, Y. CR5-5Ishikawa, Y. CR8-4Ishikawa, Y. MoP-CR-24Ishikawa, Y. ThP-CR-23Ishikawa, Y. TuP-CR-13Ishikawa, Y. TuP-ED-1

Ishikawa, Y. TuP-ED-7Ishimaru, D. GR7-3Ishimaru, D. TuP-GR-18Ishimoto, S. OD5-3Ishimoto, S. ThP-GR-12Ishimoto, S. ThP-OD-23Ishitani, Y. CR6-1Islam, M. ED4-1Islam, S. TuP-ED-23Iso, K. GR15-3Iso, K. GR3-3Isshiki, T. GR11-5Isshiki, T. MoP-CR-2Itagaki, H. MoP-CR-13Itagaki, K. ED12-2Itakura, H. GR12-8Itakura, H. ThP-GR-7Ito, D. CR14-5Ito, J. TuP-CR-25Ito, K. CR6-4Ito, K. ED3-4Ito, M. OD8-1Ito, M. TuP-OD-2Ito, T. CR9-3Ito, T. GR13-6Ito, T. MoP-GR-30Ito, T. TuP-CR-31Itoh, S. ThP-CR-29Itokazu, Y. CR12-4Itokazu, Y. GR13-8Itokazu, Y. TuP-GR-8Itokazu, Y. TuP-OD-1Iveland, J. CR15-4Iwai, H. J2-5Iwai, T. OD10-3Iwaisako, Y. OD10-3Iwata, J.-I. ThP-GR-31Iwata, N. MoP-ED-18Iwata, T. GR8-1Iwaya, M. CR14-7Iwaya, M. GR13-3Iwaya, M. GR2-2Iwaya, M. GR2-6Iwaya, M. GR5-2Iwaya, M. J5-4Iwaya, M. J7-4Iwaya, M. OD16-4Iwaya, M. OD16-7Iwaya, M. OD3-1Iwaya, M. OD3-4Iwaya, M. OD5-3Iwaya, M. OD8-2Iwaya, M. OD9-3Iwaya, M. ThP-GR-10Iwaya, M. ThP-GR-12Iwaya, M. ThP-OD-1

DRAFT


Iwaya, M. ThP-OD-23Iwaya, M. ThP-OD-24Iwayama, S. GR5-2Iwayama, S. J7-4Iwayama, S. OD16-4Iwayama, S. OD16-7Iwayama, S. OD8-2Iwinska, M. GR3-4Iwinska, M. GR3-5Iwinska, M. GR3-6Iwinska, M. GR9-2Iwinska, M. GR9-4Iwinska, M. GR9-6Iwinska, M. TuP-CR-28Iyoda, K. TuP-CR-25Izumisawa, S. GR3-3

— J —Jacobs, A.G. ED2-3Jacopin, G. CR14-1Jacopin, G. CR15-7Jacopin, G. GR6-4Jacopin, G. GR6-5Jacopin, G. OD12-1Jacopin, G. ThP-CR-1Jacopin, G. ThP-OD-10Jacopin, G. TuP-OD-29Jaeger, D. CR7-7Jaeger, D. OD16-5Jagsch, S.T. CR13-4Jain, S. ED7-6Jain, S. ThP-ED-23Jakiela, R. GR6-1Jakiela, R. MoP-CR-29Jang, D.-J. ThP-CR-7Jang, M.-H. ThP-OD-9Jang, S. MoP-ED-27Jang, T. MoP-OD-16Jang, T. ThP-ED-32Jang, W.-H. TuP-ED-15Jangid, T. TuP-GR-26Janicki, L. CR12-3Janicki, L. MoP-CR-6Janicki, L. OD4-2Jankowski, N. CR6-3Jankowski, N. CR8-2Janzén, E. J2-2Jarasiunas, K. TuP-CR-4Jarman, J. J1-3Jarman, J. OD11-1Jarman, J.C. CR13-2Jarman, J.C. OD4-4Jarman, J.C. ThP-CR-25Jarman, J.C. TuP-OD-25Jaros, A. CR15-5Jéhn, Z. OD4-3

Jena, D. CR16-3Jena, D. ED1-3Jena, D. ED13-8Jena, D. ED4-1Jena, D. OD1-3Jena, D. TuP-ED-23Jeon, D.-W. TuP-GR-14JEON, S. ThP-OD-5Jeong, H. J6-5Jeong, H. ThP-GR-24Jeong, H.-H. MoP-OD-27Jeong, J.-s. ThP-ED-16Jeong, S. ThP-OD-5Jha, J. TuP-ED-31Jheng, J.-Y. ThP-OD-3Ji, M. GR10-2Ji, P. GR10-1Ji, X. TuP-OD-16Jia, L. ED14-7Jia, L. MoP-GR-20Jia, L. OD16-6Jia, Y. MoP-GR-18Jia, Y. ThP-CR-30Jiang, H. ED12-4Jiang, H. ED15-4Jiang, H. MoP-CR-5Jiang, H. MoP-GR-4Jiang, J. OD11-6Jiang, J. OD2-6Jiang, J.-G. MoP-GR-28Jiang, K. MoP-GR-18Jiang, K. ThP-CR-30Jiang, N. ThP-GR-8Jiang, S. ThP-CR-9Jiang, S. TuP-GR-38Jiang, X. TuP-OD-34Jiao, F. MoP-OD-34Jiao, F. TuP-CR-12Jiao, F. TuP-GR-38Jiao, Q. MoP-OD-34Jimenez, J. ThP-GR-1Jin, J. OD12-4Jin, L. MoP-CR-1Jin, W. OD7-4Jinno, D. GR13-3Jiu, L. ThP-CR-2Jo, M. GR11-4Jo, M. GR13-8Jo, M. OD10-3Jo, M. OD16-2Jo, M. TuP-GR-8Jo, M. TuP-OD-1Johansson, J. GR2-3Johnson, D. ED7-3Johnson, H. ED14-5Johnson, N. CR12-6

Johnson, S. GR16-2Johnson, S.D. TuP-GR-6Jonusis, L. TuP-CR-5Jouneau, P.-H. CR2-1Ju, J.-M. TuP-GR-19Juillaguet, S. J5-1Juillaguet, S. MoP-CR-3Juillaguet, S. ThP-CR-22Julien, F. J3-6Julien, F.H. J1-7Julien, F.H. J7-5Jung, H. OD5-2Jung, H. TuP-CR-11Jung, S. MoP-ED-27Jurkevicius, J. ThP-CR-6Jyokawa, T. OD8-1

— K —K, B. MoP-GR-10K, R. MoP-CR-31Kabamura, T. MoP-ED-10Kabouche, R. ED15-3Kabouche, R. ED4-3Kachi, T. CR10-5Kachi, T. CR11-2Kachi, T. CR16-1Kachi, T. CR6-4Kachi, T. ED2-6Kachi, T. ED3-4Kachi, T. ED3-7Kachi, T. ED5-7Kachi, T. ED6-2Kachi, T. ED6-3Kachi, T. ThP-CR-26Kacperski, J. OD1-7Kacperski, J. ThP-OD-18Kacperski, J. ThP-OD-29Kadys, A. CR4-5Kadys, A. MoP-CR-7Kadys, A. MoP-GR-5Kadys, A. MoP-GR-7Kadys, A. ThP-CR-18Kadys, A. ThP-CR-6Kadys, A. ThP-ED-24Kaess, F. GR1-2Kaess, F. GR2-1Kaess, F. J5-5Kafar, A. OD13-1Kafar, A. OD4-6Kafar, A. ThP-OD-18Kahrmann, C. CR8-2Kahrmann, C. GR7-6Kai, C. MoP-GR-18Kai, C. ThP-CR-30Kaiser, U. GR2-4Kajiwara, Y. ED3-6

DRAFT


Kajiwara, Y. TuP-ED-9Kakanakova-Gueorguieva, A.

MoP-GR-9Kakimoto, K. ThP-GR-28Kakimoto, K. ThP-GR-33Kakushima, K. ED8-5Kakushima, K. J2-5Kalbarczyk, K. ThP-ED-22Kalinowski, S. CR13-6Kalinowski, S. CR14-6Kalisch, H. GR1-6Kalisch, H. OD13-2Kalisch, H. TuP-ED-24Kalra, A. MoP-ED-16Kalra, A. MoP-GR-11Kalra, A. OD13-4Kalra, A. OD3-6Kalra, A. TuP-OD-6Kamada, R. ThP-OD-2Kamada, Y. GR7-3Kamada, Y. TuP-GR-18Kamarundzaman, A.

TuP-GR-27Kamata, N. CR12-4Kamata, N. MoP-CR-10Kamata, N. MoP-CR-25Kamata, N. TuP-GR-8Kamata, N. TuP-OD-1Kamimura, R. ED3-7Kamimura, R. OD10-3Kaminski, M. ED12-3Kaminski, M. TuP-ED-32Kamiyama, I. ThP-OD-1Kamiyama, M. GR15-6Kamiyama, S. CR14-3Kamiyama, S. CR14-7Kamiyama, S. GR13-3Kamiyama, S. GR2-2Kamiyama, S. GR2-6Kamiyama, S. GR5-2Kamiyama, S. J7-3Kamiyama, S. J7-4Kamiyama, S. OD16-4Kamiyama, S. OD16-7Kamiyama, S. OD3-1Kamiyama, S. OD3-4Kamiyama, S. OD5-3Kamiyama, S. OD6-1Kamiyama, S. OD8-2Kamiyama, S. OD9-3Kamiyama, S. ThP-GR-10Kamiyama, S. ThP-GR-12Kamiyama, S. ThP-OD-1Kamiyama, S. ThP-OD-23Kamiyama, S. ThP-OD-24Kamoshida, R. MoP-CR-23

Kanaga, S. TuP-ED-14Kanako, S. ThP-GR-8Kanatani, K. ED15-5Kanatani, K. ED5-6Kanechika, M. CR10-5Kanechika, M. ED6-3Kanegae, K. CR11-1Kanegae, K. CR16-1Kanegae, K. CR16-2Kaneki, S. CR11-3Kaneki, S. ED13-4Kaneko, M. CR4-3Kang, C.-M. TuP-OD-17Kang, C.-M. TuP-OD-18Kang, J. ThP-GR-30Kang, M.-J. TuP-ED-11Kang, M.-J. TuP-ED-2Kang, S. OD15-6Kang, S.-H. TuP-GR-19Kang, X. MoP-OD-34Kang, X. TuP-CR-12Kang, X. TuP-GR-38Kangawa, Y. CR9-4Kangawa, Y. GR1-5Kangawa, Y. GR10-6Kangawa, Y. GR13-6Kangawa, Y. MoP-CR-34Kangawa, Y. MoP-GR-34Kangawa, Y. ThP-GR-28Kangawa, Y. ThP-GR-31Kangawa, Y. ThP-GR-33Kangawa, Y. ThP-OD-27Kanitani, Y. CR15-2Kannan, S. MoP-GR-12Kanno, A. OD7-3Kanyandekwe, J. TuP-GR-10Kaplar, R.A. J2-1Kaplar, R.J. MoP-CR-35Kaplar, R.J. TuP-ED-16Kapoor, A. J1-7Kapoor, A. J7-5Kapoor, A. TuP-CR-20Kappers, M. OD4-7Kappers, M. TuP-CR-6Kappers, M.J. CR1-3Kappers, M.J. CR4-2Kappers, M.J. CR5-6Kappers, M.J. CR5-7Kappers, M.J. CR7-5Kappers, M.J. MoP-CR-18Kappers, M.J. TuP-CR-2Käpplinger, I. TuP-OD-4Karakostas, T. ThP-CR-13Karakostas, T. TuP-CR-34Karboyan, S. ED6-1Kargin, N.I. TuP-GR-13

Karmalkar, S. MoP-ED-19Karpov, S. GR16-4Karpov, S. OD5-6Kashima, Y. MoP-OD-6Kashima, Y. OD10-3Kataoka, K. CR6-6Kataoka, K. MoP-GR-22Katayama, H. ThP-ED-6Katayama, R. OD11-2Katayama, R. OD11-3Katayama, R. OD7-2Kato, M. CR6-4Kato, S. ED2-1Kato, S. TuP-OD-14Katsumata, H. MoP-CR-11Katzer, S. GR12-5Kavouras, P. TuP-CR-29Kawabata, S. TuP-CR-23Kawada, Y. MoP-ED-12Kawakami, K. ThP-GR-33Kawakami, Y. CR12-1Kawakami, Y. CR3-4Kawakami, Y. GR13-1Kawakami, Y. J5-3Kawakami, Y. OD6-3Kawamoto, N. GR15-2Kawamura, F. ThP-GR-6Kawamura, T. MoP-CR-34Kawamura, T. ThP-GR-28Kawamura, T. ThP-OD-27Kawasaki, Y. CR14-5Kawasaki, Y. ThP-CR-14Kawase, Y. GR5-2Kawase, Y. OD16-4Kawase, Y. OD16-7Kazior, T. GR12-5Kearns, J. OD8-5Kehagias, T. ThP-CR-13Keller, S. ED11-2Keller, S. ED11-7Keller, S. GR14-1Keller, S. GR14-3Keller, S. GR14-4Kempisty, P. CR9-4Kempisty, P. GR1-5Kempisty, P. MoP-GR-34Ketzer, F. CR3-3Keum, D. ThP-ED-12Keum, D. ThP-ED-27Key, D. GR4-2Khachariya, D. ED12-1Khadar, R.A. ED9-1Khalilian, M. GR2-3Khan, A. CR12-7Khan, A. ThP-ED-31Khan, M.A. OD14-3

DRAFT


Khanna, S.P. MoP-OD-26Khiangte, K.R. ThP-GR-21Khmyrova, I. MoP-OD-36Kholopova, J. MoP-OD-36Khoury, M. OD12-7Kiang, Y.-W. TuP-OD-20Kiguchi, T. ThP-CR-27Kikuchi, A. CR14-5Kikuchi, A. ThP-CR-14Kikuchi, K. CR14-2Kikuta, D. ED3-4Kim, D. J6-5Kim, D. ThP-GR-24Kim, D.-C. MoP-OD-35Kim, D.-C. ThP-GR-22Kim, D.-H. ThP-OD-20Kim, F. GR9-5Kim, G.-Y. ThP-GR-24Kim, H. ThP-ED-12Kim, H. ThP-ED-27Kim, H. TuP-CR-11Kim, H.-S. ED14-6Kim, H.-S. TuP-ED-11Kim, H.-S. TuP-ED-15Kim, H.-S. TuP-ED-2Kim, J. CR15-3Kim, J. GR2-1Kim, J. GR5-4Kim, J. J6-5Kim, J. J6-5Kim, J. J7-2Kim, J. MoP-CR-13Kim, J. ThP-GR-24Kim, J. ThP-GR-24Kim, J. TuP-CR-11Kim, J. TuP-CR-27Kim, J. TuP-OD-18Kim, J. TuP-OD-3Kim, J.-G. TuP-ED-29Kim, J.-G. TuP-GR-19Kim, J.H. ED14-2Kim, J.H. GR1-3Kim, J.-H. TuP-GR-14Kim, J.-H. TuP-OD-26Kim, K.-C. MoP-OD-21Kim, K.-W. TuP-GR-19Kim, M. GR2-6Kim, M. GR5-2Kim, M. TuP-CR-10Kim, P. MoP-GR-12Kim, R.-H. TuP-ED-29Kim, S. ThP-CR-3Kim, S. TuP-CR-11Kim, S. TuP-GR-14Kim, S. TuP-OD-26Kim, S.H. CR16-4

Kim, S.-J. MoP-OD-15Kim, S.-J. OD12-2Kim, T. GR5-4Kim, T. MoP-OD-16Kim, T. MoP-OD-17Kim, T. MoP-OD-21Kim, T. OD15-6Kim, T. ThP-OD-19Kim, T. TuP-OD-21Kim, T. TuP-OD-23Kim, W. MoP-OD-27Kim, Y.M. ThP-CR-3Kimoto, K. CR7-4Kimoto, T. CR10-5Kimoto, T. CR11-1Kimoto, T. CR16-1Kimoto, T. ED6-3Kimura, S. CR5-3Kimura, S. J7-3Kimura, S. TuP-CR-14Kimura, T. CR14-3Kimura, T. CR2-3Kimura, T. GR15-5Kimura, T. GR5-3Kimura, T. MoP-GR-22Kimura, T. ThP-CR-12King, C. ED4-1Kioseoglou, J. TuP-CR-33Kioseoglou, J. TuP-CR-34Kioupakis, E. J6-4Kirste, L. GR12-2Kirste, L. OD3-5Kirste, L. ThP-OD-4Kirste, L. TuP-GR-12Kirste, R. CR5-4Kirste, R. ED14-2Kirste, R. GR1-1Kirste, R. GR1-2Kirste, R. GR1-3Kirste, R. OD16-1Kishino, K. CR14-2Kishino, K. GR6-2Kishino, K. MoP-OD-35Kishino, K. ThP-GR-37Kitamoto, A. GR15-6Kitamoto, A. GR15-7Kitamoto, A. ThP-GR-28Kitamura, T. GR3-1Kiyoto, Y. ThP-ED-9Kizilyalli, I.C. ED1-1Klosek, K. CR12-3Klosek, K. J3-5Klosek, K. ThP-GR-35Klump, A. CR5-4Klump, A. GR1-1Klump, A. GR2-1

Klump, A. J5-5Klump, A. ThP-ED-30Kluth, E. CR6-5Klymov, O. CR2-4Klymov, O. TuP-GR-33Knauer, A. GR7-1Knauer, A. OD14-4Knauer, A. OD15-4Kneissl, M. CR10-2Kneissl, M. CR11-4Kneissl, M. CR12-2Kneissl, M. GR13-7Kneissl, M. GR5-6Kneissl, M. GR7-1Kneissl, M. J1-5Kneissl, M. J4-2Kneissl, M. J4-3Kneissl, M. OD14-1Kneissl, M. OD14-4Kneissl, M. OD14-6Kneissl, M. OD14-7Kneissl, M. OD15-3Kneissl, M. OD16-5Kneissl, M. TuP-OD-4Knigge, S. TuP-OD-4Kobayashi, A. GR1-4Kobayashi, A. OD1-4Kobayashi, A. ThP-GR-11Kobayashi, H. J5-3Kobayashi, K. CR4-3Kobayashi, M. ThP-GR-5Kobayashi, N. OD8-1Koch, M. MoP-GR-26Kocher, C.C. CR13-2Kocher, C.C. OD4-4Kocher, C.C. TuP-OD-25Kocher, C.C. TuP-OD-25Köck, H. ED7-2Koda, R. OD8-1Kodama, Y. ThP-CR-27Koenders, L. ED7-1Koenders, L. TuP-OD-13Koenig, H. OD9-1Kogame, H. MoP-OD-30Kogiso, T. ThP-CR-26Kogotkov, V. ThP-OD-33Kogotkov, V. TuP-GR-1Koh, Y. ThP-ED-21Kohn, E. ED12-1Koide, N. GR2-6Koide, Y. CR4-3Koide, Y. CR7-4Koide, Y. ThP-CR-28Koide, Y. TuP-CR-27Koide, Y. TuP-CR-32Koide, Y. TuP-ED-10

DRAFT


Kojima, H. GR2-6Kojima, K. CR6-6Kojima, K. GR10-4Kojima, K. GR10-5Kojima, K. GR11-1Kojima, K. J6-3Kojima, K. MoP-OD-4Kojima, K. OD14-2Kojima, K. OD7-3Kojima, N. TuP-ED-34Kojima, T. ThP-GR-29Kokubo, M. OD10-3Kokubo, N. CR7-3Kolbe, T. GR7-1Kolbe, T. OD14-4Kolbe, T. OD15-4Kolbe, T. TuP-OD-4Kolenda, M. CR4-5Kolenda, M. MoP-GR-7Kolenda, M. ThP-CR-6Kolibal, M. MoP-GR-25Koller, C. CR8-1Komatsu, T. OD7-2Komissarov, I.V. TuP-GR-13Komninou, P. ThP-CR-13Komninou, P. ThP-GR-15Komninou, P. TuP-CR-29Komninou, P. TuP-CR-33Komninou, P. TuP-CR-34Komura, S. ThP-GR-33Konczewicz, L. ThP-CR-22Kondo, H. TuP-GR-28Kondo, H. TuP-GR-29Kondo, T. J7-3Kondo, T. MoP-ED-18Konecny, M. MoP-GR-25Konishi, K. ED2-5Konno, T. CR11-1Konno, T. ED1-2Konno, T.J. ThP-CR-27Kono, S. ThP-ED-10Konoplev, S. OD5-6Kordina, O. ED4-3Kordina, O. J2-2Korona, K.P. CR3-2Korytov, M. J5-1Kosiel, K. ED12-3Kostelnik, P. ED5-3Kostelnik, P. MoP-GR-25Kotzai, A. CR10-1Koukitu, A. GR15-1Koukitu, A. GR15-2Koukitu, A. GR15-3Koukitu, A. GR15-4Kourova, N. MoP-OD-7Kourova, N. TuP-GR-25

Kourova, N. TuP-GR-7Kovac, J. MoP-GR-3Kovalchuk, A. MoP-OD-36Kovalchuk, N.G. TuP-GR-13Kovalevskij, V. ThP-CR-6Kowalska, D. GR6-1Kozak, B. MoP-GR-23Kozen, A. GR16-2Kozen, A.C. TuP-GR-6Kozubal, M. ED12-3Kozubal, M. TuP-ED-32Kozuka, Y. J7-4Kraeusel, S. CR10-1Krause, S. ED4-2Kraut, M. CR11-6Kraut, M. MoP-GR-26Kret, S. ThP-CR-13Krishna, A. ED11-7Krishna, A. GR14-4Krishna, S. ED7-6Krishna, S. ThP-OD-30Krishnan, B. ThP-GR-16Kristukat, C. J4-7Krost, A. CR6-3Krukowski, S. MoP-CR-34Krupanidhi, S. OD3-2Krupanidhi, S. ThP-ED-28Krupanidhi, S. ThP-ED-29Kruszka, R. ED12-3Kruszka, R. J3-5Krysko, M. GR14-5Kub, F.J. ED2-3Kuball, M. CR16-7Kuball, M. ED6-1Kuball, M. ED6-2Kuball, M. GR12-1Kuball, M. MoP-CR-16Kuball, M. MoP-GR-3Kubo, T. ED3-3Kubo, T. TuP-ED-28Kuboya, S. GR9-7Kuboya, S. J4-5Kucharski, R. CR8-5Kucharski, R. GR4-3Kucharski, R. MoP-CR-6Kudo, Y. CR15-2Kudrawiec, R. CR12-3Kudrawiec, R. MoP-CR-6Kudrawiec, R. OD4-2Kudrawiec, R. ThP-GR-36Kuhn, C. OD16-5Kuldová, K. ThP-GR-15Kumagai, N. MoP-CR-13Kumagai, N. TuP-OD-24Kumagai, Y. ED2-5Kumagai, Y. GR15-1

Kumagai, Y. GR15-2Kumakura, K. ED12-6Kumakura, K. GR14-2Kumakura, K. J6-7Kumakura, K. OD16-3Kumar, A. ThP-ED-1Kumar, A. TuP-ED-31Kumar, G. MoP-OD-26Kumar, H. ED12-5Kumar, M. ThP-OD-26Kumar, M.S. MoP-GR-36Kumar, M.S. MoP-OD-23Kumar, R. OD11-1Kumar, R. TuP-CR-19kumar, S. ED12-5Kumar, S. ED6-4Kumar, S. MoP-ED-8Kumar, S. TuP-OD-7Kumar, V. TuP-OD-25Kunert, G. GR6-1Kunikiyo, T. MoP-CR-32Kunzmann, D.J. OD4-1Kunzmann, D.J. TuP-OD-31Kuo, H.-C. GR16-8Kuo, H.-C. J1-4Kuo, H.C. TuP-OD-8Kuo, K.-K. ED7-5Kuo, S.-Y. MoP-OD-5Kuo, Y. TuP-OD-20Kuraguchi, M. ED3-6Kuraguchi, M. TuP-ED-9Kurai, S. CR3-5Kurai, S. MoP-CR-1Kurai, S. TuP-CR-1Kuramata, A. MoP-CR-20Kuramochi, H. MoP-GR-35Kuramoto, M. J7-4Kure, T. CR6-3Kure, T. OD14-1Kuritzky, L. OD12-7Kuroe, H. ThP-GR-37Kuroiwa, H. J2-5Kusaba, A. GR1-5Kusaba, A. GR13-6Kusaba, A. MoP-GR-34Kusaba, A. ThP-GR-33Kusanagi, S. CR15-2Kusch, G. CR10-1Kusch, G. CR10-2Kusch, G. GR5-6Kusch, G. J1-5Kusch, G. J4-2Kusch, G. J4-3Kusch, G. ThP-OD-21Kushimoto, M. ED1-4Kushimoto, M. GR16-5

DRAFT


Kushimoto, M. J6-6Kushimoto, M. OD11-3Kushvaha, S.S. MoP-GR-36Kushvaha, S.S. MoP-OD-23Kushwah, B. TuP-ED-14Kusumoto, S. OD11-2Kuwaba, S. CR12-4Kuwaba, S. TuP-GR-8Kuwaba, S. TuP-OD-1Kuwashima, Y. OD10-3Kuzmik, J. ED11-5Kuzmik, J. GR12-1Kuzmik, J. MoP-CR-17Kuzmik, J. MoP-GR-3Kuzmik, J. ThP-GR-13Kuzmik, J. TuP-ED-27Kuzmík, J. TuP-ED-8Kuzuhara, M. ED15-5Kuzuhara, M. ED5-6Kuzuhara, M. MoP-ED-13Kuzuhara, M. ThP-ED-2Kuzuhara, M. TuP-CR-23Kuzuhara, M. TuP-ED-6Kwak, J. MoP-OD-16Kwak, J. MoP-OD-17Kwak, J. TuP-OD-21Kwak, T. GR5-4Kwak, T. ThP-ED-32Kwak, T. ThP-GR-32Kwak, T. TuP-OD-23Kwon, M. TuP-OD-30

— L —Labunov, V.A. TuP-GR-13Lachowski, A. CR7-6Lafossas, M. OD6-2Lafosse, X. MoP-CR-15Laha, A. ThP-GR-21Lähnemann, J. GR14-5Lähnemann, J. GR14-6Lähnemann, J. GR6-3Lahourcade, L. CR1-1Lai, K.-Y. MoP-GR-16Lai, K.-Y. OD7-7Lai, W.-C. OD13-5Lai, W.-C. TuP-CR-17Lai, W.-C. TuP-GR-37Lai, Y. MoP-OD-1Laishram, R. TuP-CR-20Laleyan, D.A. J6-4Lamprecht, M. CR10-4Lange, K. CR6-5Lany, S. CR9-7Lany, S. MoP-GR-31Largeau, L. J3-6Lassailly, Y. CR1-5

Latyshev, P. ThP-OD-33Latyshev, P. TuP-GR-1Lau, K. ED12-4Lau, K. ED15-4Lau, K. OD2-6Laurencikova, A. TuP-ED-8Laurent, M. CR2-2Le, B.H. OD10-4Leach, J. OD4-7Lebrun, D.M. MoP-OD-30Ledig, J. CR15-5Ledoux, O. OD6-2Lee, A. OD7-4Lee, B. ThP-OD-19Lee, C. MoP-CR-27Lee, C. TuP-OD-30Lee, C.-H. TuP-ED-11Lee, C.-H. TuP-ED-2Lee, C.-h. ThP-ED-16Lee, D. ThP-GR-14Lee, D. ThP-OD-20Lee, D.-S. MoP-OD-15Lee, D.-S. OD12-2Lee, D.-S. TuP-GR-34Lee, D.-S. TuP-OD-17Lee, D.-s. TuP-OD-18Lee, H. OD15-6Lee, H.-S. TuP-GR-19Lee, I.-H. MoP-OD-20Lee, I.-H. MoP-OD-21Lee, J. GR5-4Lee, J. MoP-OD-16Lee, J. MoP-OD-16Lee, J. MoP-OD-17Lee, J. ThP-GR-32Lee, J. TuP-OD-21Lee, J. TuP-OD-23Lee, J.-H. ED10-2Lee, J.-H. ED10-2Lee, J.-H. TuP-CR-10Lee, J.-H. TuP-ED-19Lee, J.-H. TuP-ED-29Lee, J.-H. TuP-GR-19Lee, J.-H. TuP-GR-19Lee, J.-S. TuP-GR-34Lee, J.-S. TuP-OD-17Lee, J.-S. TuP-OD-18Lee, J.-Y. TuP-GR-34Lee, J.-Y. TuP-OD-18Lee, K. MoP-ED-5Lee, K. MoP-OD-15Lee, K. OD1-3Lee, K. OD12-2Lee, K. ThP-CR-5Lee, K. ThP-ED-32Lee, K.-H. TuP-ED-34

Lee, L. CR5-6Lee, L. MoP-CR-18Lee, L. TuP-CR-2Lee, M. TuP-GR-14Lee, S. CR15-3Lee, S. J7-2Lee, S. MoP-OD-3Lee, S. OD8-5Lee, S.-W. ThP-OD-9Lee, T. OD15-6Lee, W.-W. MoP-OD-20Lee, Y. MoP-GR-29Lee, Y. MoP-OD-11Lee, Y. TuP-GR-14Lee, Y.-H. ED7-5Lee, Y.-H. OD13-5Lee, Y.-H. TuP-CR-17Lee, Y.-H. TuP-GR-23Lee, Y.-H. TuP-GR-37Lee, Y.-S. TuP-GR-19Lefebvre, P. CR3-2Lefebvre, P. OD4-5Lefevbre, D. MoP-CR-15Legotin, S. MoP-OD-7Legotin, S. TuP-GR-7Lehmann, M. CR11-4Lei, J. ThP-ED-4Lei, M. J1-6Leibiger, G. TuP-CR-29Leipner, H.S. TuP-CR-29Lelikov, Y. ThP-OD-33Lelikov, Y. TuP-GR-1Lemettinen, J. ED13-2Lenrick, F. GR2-3Lenrick, F. J7-1Lentali, J.-M. CR1-5Lenz, A. CR11-5Leoch, A. GR11-7Leonard, F. J2-1Leone, S. OD3-5Leone, S. ThP-OD-4Leone, S. TuP-GR-12Leonidov, A. ThP-OD-33Leonidov, A. TuP-GR-1Leroux, M. J5-1Leroux, M. MoP-CR-3Leroux, M. ThP-CR-22Lesnik, A. CR8-2Leszczynski, M. CR7-6Letts, E.R. GR4-2Levi, S. TuP-ED-26Levy, F. OD6-2Leymarie, J. CR6-2Lheureux, G. CR2-2Lheureux, G. OD6-6Li, B. MoP-ED-24

DRAFT


Li, B. ThP-ED-14Li, B. TuP-OD-28Li, C. MoP-OD-34Li, C. TuP-CR-12Li, D. MoP-GR-18Li, D. MoP-OD-14Li, D. ThP-CR-30Li, D. ThP-OD-28Li, D. TuP-CR-7Li, D. TuP-CR-8Li, D. TuP-CR-9Li, F. ThP-CR-19Li, G. GR1-5Li, H. CR12-5Li, H. GR14-4Li, H. MoP-GR-27Li, H. MoP-OD-12Li, H. OD12-4Li, H. OD12-7Li, H. ThP-CR-16Li, H. ThP-GR-34Li, J. GR11-2Li, J. J1-6Li, J. MoP-GR-14Li, J. MoP-OD-18Li, J. MoP-OD-2Li, J. ThP-CR-9Li, J. ThP-GR-30Li, J. TuP-GR-21Li, J. TuP-GR-38Li, J. TuP-OD-16Li, K. OD7-4Li, K. OD7-5Li, L. CR5-7Li, L. MoP-ED-20Li, M. GR8-4Li, M. MoP-OD-9Li, N. MoP-OD-8Li, P. OD2-6Li, P. TuP-OD-11Li, Q. OD10-6Li, S. TuP-GR-38Li, T. ThP-GR-4Li, W. ED10-1Li, X. ED8-3Li, X. OD11-6Li, X. ThP-GR-34Li, Y. GR2-4Li, Y.-J. GR16-8Li, Z. ED7-1Li, Z. MoP-CR-5Li, Z. MoP-GR-1Li, Z. OD9-2Li, Z. TuP-GR-3Liang, H. MoP-GR-21Liang, H. MoP-GR-24

Liang, J. ThP-ED-10Liang, J. TuP-CR-18Liang, M. MoP-GR-33Liang, M. TuP-GR-21Liao, H. ThP-CR-9Liao, M. ThP-CR-28Liao, M. TuP-ED-10Liao, Y. ED10-4Liao, Y.Q. J6-6Ligor, O. MoP-CR-7Lim, S.-H. ThP-CR-3Lim, T. TuP-GR-14Lin, B. CR6-1Lin, C.-F. ThP-OD-13Lin, C.-H. ED7-5Lin, C.-H. OD13-5Lin, C.-H. TuP-CR-17Lin, C.-H. TuP-GR-23Lin, C.-H. TuP-GR-37Lin, C.-H. TuP-OD-20Lin, H. MoP-ED-4Lin, J.-J. J1-4Lin, J.-J. TuP-OD-35Lin, T. ThP-CR-23Lin, T.-T. OD4-3Lin, W.R. TuP-ED-33Lin, Y.-T. TuP-GR-23Lin, Z. MoP-OD-25Liou, R.-S. CR1-7Lippert, M. OD2-4Litwin-Staszewska, E.

CR8-5Liu, B. GR11-6Liu, B. GR2-5Liu, B. MoP-OD-24Liu, B. ThP-OD-22Liu, B. ThP-OD-32Liu, B. TuP-OD-34Liu, C.-P. MoP-GR-16Liu, C.-W. MoP-GR-28Liu, C.-W. MoP-GR-29Liu, D. CR16-7Liu, G. MoP-ED-22Liu, H. GR16-1Liu, H. J1-3Liu, H. MoP-GR-18Liu, H. ThP-CR-30Liu, J. GR16-7Liu, J. MoP-OD-14Liu, J. MoP-OD-29Liu, J. OD8-4Liu, J. OD9-2Liu, J. TuP-CR-7Liu, J. TuP-CR-8Liu, J. TuP-CR-9Liu, K. GR10-1

Liu, Q. ED10-4Liu, Q. TuP-GR-2Liu, S. J6-2Liu, W. CR15-7Liu, W. ED11-4Liu, W. OD12-1Liu, W. ThP-CR-1Liu, W. ThP-OD-10Liu, X. OD10-4Liu, Y. CR10-1Liu, Y. MoP-ED-20Liu, Y. MoP-OD-22Liu, Y. MoP-OD-22Liu, Y. OD11-1Liu, Y. ThP-CR-25Liu, Y. TuP-OD-25Liu, Y.H. J6-6Liu, Z. ED8-4Liu, Z. GR16-5Liu, Z. GR4-5Liu, Z. MoP-GR-33Liu, Z. OD16-6Liu, Z. ThP-GR-4Liu, Z. TuP-GR-21Liu, Z. TuP-OD-33Liudi Mulyo, A. ThP-GR-37Llopis, A. MoP-CR-8Lo, J.-L. OD7-7Lobanova, A. J4-3Lobo Ploch, N. OD14-4Lobo Ploch, N. TuP-OD-4Logan, J. GR12-5Long, H. OD10-6Long, H. OD8-4Longobardi, G. ED6-5Lopez Luna, E. ThP-GR-23Lopez Luna, E. TuP-OD-15Lopez-Romero, D. J5-2Lorenz, K. CR4-2Lorenz, K. MoP-CR-20Lorenz, K. OD4-7Lu, A. ThP-CR-32Lu, H. ED11-4Lu, H. ED12-8Lu, H. ED13-3Lu, H. ED2-4Lu, H. MoP-ED-23Lu, H. MoP-GR-20Lu, H. ThP-ED-15Lu, H. ThP-OD-15Lu, H. ThP-OD-8Lu, H. TuP-OD-16Lu, J. J2-2Lu, S. OD6-1Lu, T. J7-1Lu, T.-C. J1-4

DRAFT


Lu, T.-C. MoP-GR-27Lu, T.-C. MoP-OD-12Lu, T.-C. MoP-OD-5Lu, X. OD3-7Lu, Y. ED4-5Lu, Y. TuP-ED-20Lu, Y. TuP-GR-15Luagauer, H. OD9-1Lucznik, B. GR3-4Lucznik, B. GR9-2Lucznik, B. GR9-4Lucznik, B. GR9-6Lucznik, B.L. GR3-6Ludwig, K. GR16-2Ludwig, K.F. TuP-GR-6Lugauer, H.-J. J3-2Lugauer, H.-J. J3-4Lugauer, H.-J. OD14-1Lugauer, H.-J. ThP-CR-1Luna, L.E. ED2-3Luna, L.E. J2-3Lunardi, L. ED12-1Lund, C. GR14-3Luo, P. TuP-ED-22Luo, Q. TuP-OD-22Luo, S. OD10-6Luo, X. MoP-GR-2Luo, Y. OD12-4Luo, Y. ThP-GR-34Luo, Y.-T. OD7-7Luong, T. TuP-GR-31Lutsenko, E.V. ThP-GR-17lv, H. ED14-7Lv, H. MoP-GR-20Lymperakis, L. CR1-4Lymperakis, L. GR10-7Lynsky, C. CR2-2Lynsky, C. OD1-6Lynsky, C. OD6-6Lyons, J. J2-3Lyu, Z. MoP-GR-4

— M —M. Abdul Khudus, M.

MoP-GR-17M. Abdul Khudus, M.

MoP-GR-37Ma, B. CR6-1Ma, J. ED13-1Ma, J. ED15-2Ma, J. ED8-2Ma, J. TuP-OD-16Ma, X. CR16-6Ma, X. ED12-7Ma, X. ED4-5Ma, X. ED5-5

Ma, X. MoP-CR-26Ma, X. ThP-ED-11Ma, X. ThP-ED-13Ma, X. ThP-ED-38Ma, X. TuP-ED-20Ma, X. TuP-OD-5Ma, Z.-C. MoP-GR-15Machida, R. OD15-2MacLure, D. CR10-1Madouri, A. J3-6Maeda, M. ED11-6Maeda, N. CR12-4Maeda, N. GR11-4Maeda, N. OD10-3Maeda, N. OD14-3Maeda, N. OD15-2Maeda, N. OD15-5Maeda, N. OD16-2Maeda, N. ThP-ED-9Maeda, N. ThP-OD-7Maeda, T. CR10-5Maeda, T. ED6-3Maehara, K. OD6-3Maeoka, A. GR11-4Mahler, F. CR1-4Majewicz, M. ThP-ED-22Majumdar, A. ThP-GR-14Makabe, I. ED12-2Makarowa, I. ThP-OD-18Makarowa, I. ThP-OD-29Makie, T. ThP-ED-9Makihira, S. ThP-CR-33Makimoto, T. MoP-GR-6makino, H. ThP-OD-2Malik, A. MoP-ED-19Malin, T.V. MoP-CR-4Malinauskas, T. CR4-5Malinauskas, T. MoP-GR-7Malinauskas, T. ThP-CR-18Malinauskas, T. ThP-ED-24Malinverni, M. OD9-4Mallem, S. TuP-ED-19Manavaimaran, B. ThP-GR-16Mancini, L. J1-7Mancini, L. J3-6Mancini, L. J7-5Mancini, L. J7-8Manglano Clavero, I. ED7-1Manglano Clavero, I. J3-4Mann, J. ThP-OD-6Mannequin, C. TuP-OD-29Mano, R. OD5-3Mano, R. ThP-GR-12Mano, R. ThP-OD-23Mantach, R. GR13-5Manz, C. TuP-GR-12

Marcinkevicius, S. CR1-1Margenfeld, C. CR15-5Margenfeld, C. ED7-1Margenfeld, C. J3-2Margenfeld, C. TuP-OD-12Mariana, S. OD2-2Mariana, S. OD7-6Mariette, H. TuP-OD-29Markiewicz, N. OD2-2Markurt, T. CR7-7Marona, L. CR7-6Marona, L. OD1-7Marona, L. OD9-5Marona, L. ThP-OD-14Marona, L. ThP-OD-29Maroun, F. CR1-5Martin, D. CR1-1Martin, D. OD12-1Martin, D. OD2-1Martin, D. ThP-OD-10Martin, R. J4-3Martin, R.W. CR10-1Martin, R.W. CR10-2Martin, R.W. CR12-7Martin, R.W. GR5-6Martin, R.W. J1-5Martin, R.W. J4-2Martin, R.W. MoP-CR-20Martin, R.W. ThP-CR-2Martin, R.W. ThP-CR-4Martin, R.W. ThP-OD-21Martin, T. ED6-1Martinelli, L. CR1-5Maruyama, H. OD13-7Maruyama, T. GR10-4Masao, I. MoP-OD-29Mashooq, K. OD10-4Masin, F. ED11-1Massabuau, F.C.-P. CR5-7Massabuau, F.C.-P. CR7-5Massabuau, F.C.-P.

ThP-CR-25Massabuau, F.C.-P.

TuP-CR-2Massies, J. CR13-4Massies, J. GR11-3Massies, J. J1-2Massies, J. J1-5Massies, J. J5-1Mastro, M.A. J2-3Mathew, M. MoP-OD-10Mathur, N. OD1-3Matias, V. OD12-3Matioli, E. ED10-7Matioli, E. ED13-1Matioli, E. ED13-6

DRAFT


Matioli, E. ED15-1Matioli, E. ED15-2Matioli, E. ED8-2Matioli, E. ED9-1Matioli, E. ED9-3Matou, T. OD8-1Matsuda, K. MoP-CR-25Matsuda, T. ED9-4Matsuda, Y. GR13-1Matsude, Y. CR4-1Matsude, Y. OD6-4Matsuhisa, K. GR8-5Matsui, F. TuP-CR-13Matsui, S. ThP-OD-2Matsumoto, K. CR3-5Matsumoto, K. GR15-2Matsumoto, K. ThP-GR-20Matsuoka, A. CR14-5Matsuoka, A. ThP-CR-14Matsuoka, T. CR10-3Matsuoka, T. CR7-1Matsuoka, T. GR9-7Matsuoka, T. J4-5Matsuura, E. OD10-3Matsuyama, H. TuP-ED-5Matta, S. J5-1Matta, S. MoP-CR-3Matta, S. ThP-CR-22Matthews, B. CR9-7Matthews, C. GR16-3Matthews, C. ThP-ED-25Matys, M. TuP-ED-27Mauder, C. TuP-ED-24Mazel, Y. TuP-GR-10Mazur, G. ED14-4McAleese, C. CR7-5McFavilen, H. ThP-ED-25Md Taib, M. TuP-GR-39Md Taib, M.B. TuP-OD-10Médard, F. CR6-2Medjdoub, F. ED15-3Medjdoub, F. ED4-3Meer, M. ThP-ED-17Meer, M. ThP-ED-37Meer, M. ThP-ED-5Meer, M. TuP-ED-30Meguekam, A. J1-1Mehnke, F. CR10-2Mehnke, F. CR12-2Mehnke, F. GR13-7Mehnke, F. OD14-6Mehnke, F. OD16-5Mehta, K. ThP-ED-25Mei, Y. OD8-4Meissner, E. MoP-ED-17Meissner, E. TuP-CR-30

Mendez Camacho, R.TuP-OD-15

Meneghesso, G. ED11-1Meneghesso, G. ED15-3Meneghesso, G. MoP-ED-23Meneghesso, G. OD14-5Meneghini, M. ED11-1Meneghini, M. ED15-3Meneghini, M. MoP-ED-23Meneghini, M. OD14-5Mengle, K. J6-4Mensi, M. CR1-1Menzhenny, M. MoP-OD-7Menzhenny, M. TuP-GR-25Menzhenny, M. TuP-GR-7Mesarovic, S. ThP-GR-1Messanvi, A. J7-5Mesuda, M. MoP-GR-35Metzner, S. CR13-6Metzner, S. CR14-4Meyer, D. GR12-5Meyer, T. TuP-OD-12Mi, M. ED12-7Mi, M. ED5-5Mi, M. MoP-CR-26Mi, M. ThP-ED-38Mi, M. TuP-ED-20Mi, Z. GR6-6Mi, Z. J6-4Mi, Z. OD10-4Miao, G. MoP-CR-5Michel, T. J6-2Micheletto, R. MoP-CR-33Mickevicius, J. CR4-4Mickevicius, J. CR4-5Mickevicius, J. MoP-CR-7Mickevicius, J. MoP-GR-5Mickevicius, J. ThP-CR-18Miebach, T. GR5-3Miki, H. ThP-OD-2Mikkelsen, A. J7-1Milakhin, D.S. MoP-CR-4Miller, A. ThP-OD-6Minami, M. J5-4Minamitani, E. CR9-5Minato, S. TuP-GR-35Mishima, A. ThP-GR-20Mishima, T. ED11-6Mishima, T. ED5-2Mishima, T. MoP-ED-1Mishima, T. ThP-ED-7Mishra, U. ED11-7Mishra, U.K. ED11-2Mishra, U.K. GR14-1Mishra, U.K. GR14-3Mishra, U.K. GR14-4

Mistele, D. TuP-ED-26Miszczuk, A. GR6-1Mita, S. CR5-4Mita, S. ED14-2Mita, S. GR1-1Mita, S. GR1-2Mita, S. GR1-3Mita, S. GR2-1Mita, S. J5-5Mita, S. OD16-1Mita, S. ThP-ED-30Mitchell, B. GR8-2Mitchell, B.J. MoP-OD-30Mitchell, P.W. CR5-7Mitchell, P.W. TuP-CR-2Mitra, S. ThP-OD-25Mitrenga, D. TuP-OD-4Mitsuishi, K. CR7-4Mittelstaedt, A. ThP-ED-34Miyagawa, R. MoP-CR-21Miyajima, T. J7-3Miyake, H. CR12-5Miyake, H. CR2-6Miyake, H. CR9-3Miyake, H. GR5-2Miyake, H. GR7-4Miyake, H. GR7-5Miyake, H. MoP-CR-1Miyake, H. OD15-7Miyake, H. OD16-5Miyake, H. ThP-GR-20Miyake, H. ThP-GR-8Miyamoto, Y. ED12-2Miyano, K. J7-6Miyoshi, H. CR3-5Miyoshi, K. OD9-3Miyoshi, M. ED3-3Miyoshi, M. J4-4Miyoshi, M. OD9-3Miyoshi, M. TuP-ED-28Miyoshi, M. TuP-OD-14Mo, B. ThP-GR-30Mochizuki, K. GR10-5Mochizuki, T. GR3-3Mock, A. TuP-GR-32Mogami, Y. GR11-4Moghadam, H.A. ThP-ED-14Mohapatra, M. ThP-ED-39Mohmad Zaini, S. TuP-GR-39Monavarian, M. J2-1Monavarian, M. MoP-GR-23Monemar, B. ED2-5Monemar, B. J7-1Monroy, E. CR2-1Monroy, E. CR3-2Monti, D. OD14-5

DRAFT


Moody, B. GR5-5Moon, D. J7-2Moon, S. J6-5Moon, S. ThP-GR-24Morassi, M. J3-6Mori, N. ThP-CR-33Mori, N. TuP-ED-17Mori, Y. CR5-3Mori, Y. CR7-2Mori, Y. GR15-6Mori, Y. GR15-7Mori, Y. GR4-4Mori, Y. GR4-6Mori, Y. ThP-GR-28Morikawa, T. GR8-2Morikawa, T. GR8-3Morikawa, T. MoP-GR-22Morikawa, Y. ThP-GR-28Morimoto, K. MoP-CR-11Morino, K. TuP-CR-22Morishima, Y. MoP-CR-20Morishita, T. ThP-CR-32Morishita, T. ThP-OD-6Moriya, Y. CR14-5Motegi, S. GR11-4Motohisa, J. TuP-CR-21Mounir, C. OD9-4Mounir, C. ThP-CR-1Mouri, S. CR4-4Mouri, S. TuP-CR-22Moustakas, T.D. ThP-CR-13Mrad, M. GR10-3Mrad, M. TuP-GR-10Mu, F. ED5-4Mughal, A. OD12-7Mughal, A.J. TuP-OD-9Muhammed, M. MoP-CR-20Mukai, H. J2-5Muller, D. CR16-3Müller, N.A. J4-7Müller, R. ThP-CR-2Müller, S. GR12-2Mulyo, A.L. MoP-OD-35Mun, S.-H. TuP-OD-17Mun, S.-H. TuP-OD-18Munshi, A. ThP-GR-22Murakami, H. GR15-1Murakami, H. GR15-2Murakami, H. GR15-3Murakami, H. GR15-4Murakami, H. ThP-GR-10Murakami, H. ThP-GR-5Murakami, K. GR4-6Muralidharan1, R. ED12-5Muralidharan, R. ED6-4Muralidharan, R. MoP-ED-16

Muralidharan, R. MoP-ED-8Muralidharan, R. MoP-GR-11Muralidharan, R. OD13-4Muralidharan, R. OD3-6Muralidharan, R. TuP-OD-6Muralidharan, R. TuP-OD-7Muramatsu, N. J5-4Muranaga, W. OD8-2Murashev, V. MoP-OD-7Murashev, V. TuP-GR-25Murashev, V. TuP-GR-7Murata, S. TuP-ED-6Murotani, H. CR3-5Müßener, J. CR14-6Muziol, G. CR3-2Muziol, G. OD1-2Muziol, G. OD1-7Muziol, G. OD4-2Myers, D.J. CR15-4Myers, M. ED7-3Myers, M. ED7-4

— N —N. Nath, D. ED6-4Nabatame, T. CR7-4Nabatame, T. ThP-CR-12Nabatame, T. TuP-CR-27Nabulsi, N. ED14-5Nachimuthu, R.K. ED7-3Nag, D. ThP-GR-21Nagai, K. TuP-OD-10Nagamatsu, K. ED9-2Nagamatsu, K. GR7-4Nagamatsu, K. OD15-7Nagano, T. OD10-3Nagaraja, K. TuP-CR-19Nagasawa, Y. MoP-OD-4Nagasawa, Y. OD14-2Nagasawa, Y. TuP-OD-2Nagase, K. ThP-OD-6Nagata, K. ThP-OD-2Nagata, T. CR4-3Naik, T.R. ED14-8Najda, S. OD13-1Nakagawa, H. GR10-4Nakagawa, K. TuP-ED-5Nakajima, A. ED8-5Nakajima, H. OD8-1Nakajima, Y. ThP-OD-12Nakamura, D. GR15-5Nakamura, D. MoP-GR-22Nakamura, K. CR9-3Nakamura, K. ED9-4Nakamura, K. GR13-6Nakamura, K. GR4-6Nakamura, K. MoP-GR-30

Nakamura, K. TuP-CR-31Nakamura, R. OD15-2Nakamura, S. CR1-5Nakamura, S. GR14-3Nakamura, S. OD1-6Nakamura, S. OD2-3Nakamura, S. OD8-5Nakamura, S. TuP-CR-26Nakamura, S. TuP-OD-9Nakamura, T. ThP-CR-10Nakamura, T. TuP-ED-1Nakanishi, T. ThP-CR-32Nakano, T. CR5-2Nakano, T. GR10-4Nakano, T. GR10-5Nakano, T. GR8-5Nakano, Y. OD13-7Nakano, Y. OD6-5Nakata, H. ThP-CR-8Nam, O. GR5-4Nam, O. ThP-ED-32Nam, O. ThP-GR-32Nam, O. TuP-OD-23Nam, Y. ThP-ED-32Namae, Y. CR14-5Namae, Y. ThP-CR-14Nambu, T. OD7-2Nanda, K. OD3-2Nanda, K. ThP-ED-28Nanda, K. ThP-ED-29Nanishi, Y. CR4-3Nanishi, Y. CR4-4Nanishi, Y. TuP-CR-22Naoi, Y. ThP-ED-6Naoki, T. ED1-5Naresh-Kumar, G. CR10-1Naresh-Kumar, G. CR10-2Nargelas, S. TuP-CR-4Nargelas, S. TuP-CR-5Narita, T. CR10-5Narita, T. CR11-2Narita, T. CR16-1Narita, T. CR6-4Narita, T. CR6-6Narita, T. ED3-4Narita, T. ED3-7Narita, T. ED5-7Narita, T. ED6-3Narita, T. ThP-CR-26Narita, Y. ED5-2Narita, Y. MoP-ED-1Narita, Y. ThP-ED-7Narodovitch, M. CR11-4Narui, H. CR15-2Narui, H. OD8-1Nasser, C. TuP-ED-22

DRAFT


Natarajan, S. MoP-GR-23Nath, D.N. ED12-5Nath, D.N. MoP-ED-16Nath, D.N. MoP-ED-8Nath, D.N. MoP-GR-11Nath, D.N. OD13-4Nath, D.N. OD3-6Nath, D.N. TuP-OD-6Nath, D.N. TuP-OD-7Navarro-Quezada, A.

TuP-CR-15Nayak, S. TuP-CR-19Negishi, C. MoP-CR-10Nemoz, M. J3-3Nemoz, M. MoP-CR-15Nemoz, M. ThP-GR-19Nener, B. CR9-6Nener, B. ED7-3Nener, B. ED7-4Nener, B. ThP-CR-16Nenstiel, C. CR6-3Nepal, N. GR12-5Nepal, N. GR16-2Nepal, N. TuP-GR-6Netzel, C. OD15-4Neugebauer, J. GR10-7Neugebauer, S. OD1-5Neugebauer, S. OD2-4Neuschulz, B. GR5-6Neuschulz, B. J4-2Neuschulz, B. OD15-3Neuschulz, B. OD16-5Ng, G. MoP-CR-31Ngo, T.-H. J1-2Ngo, T.-H. J5-1Ni, R. OD16-6Nie, K. ED11-4Niehle, M. J5-2Niermann, T. CR11-4Nikolenko, A. ThP-GR-2Nikolenko, A. ThP-GR-3Nippert, F. CR6-3Nippert, F. OD14-1Nishidate, Y. MoP-OD-36Nishiguchi, K. TuP-ED-27Nishikawa, A. ED15-3Nishimura, T. ThP-CR-10Nishio, K. GR11-5Nishio, K. MoP-CR-2Nishitani, T. MoP-ED-13Nishizawa, S.-i. ED8-5Nitta, S. ED1-4Nitta, S. ED10-4Nitta, S. GR16-5Nitta, S. J6-6Nitta, S. TuP-GR-2

Niwa, K. OD6-1Nobuoka, M. GR15-6Nobuoka, M. GR15-7Nobuoka, M. J7-6Noda, S. OD10-2Nojima, K. GR9-5Nokimura, K. CR14-7Nokimura, K. ThP-GR-10Nolot, E. TuP-GR-10Nomeika, K. TuP-CR-4Nomeika, K. TuP-CR-5Nomoto, K. ED1-3Nomoto, K. ED13-8Nomoto, K. TuP-ED-23Nomura, T. GR12-8Noorprajuda, M. GR11-8Notzel, R. TuP-GR-24Nötzel, R. TuP-GR-4Nötzel, R. TuP-GR-5Nötzel, R. TuP-GR-9Nouf-Allehiani, M. CR10-1Novak, T. ED5-3Novak, T. MoP-GR-25Nowak, E. GR1-7Nowakowski-Szkudlarek, K.

OD1-2Nowakowski-Szkudlarek, K.

OD4-2Nowicki, P. ThP-ED-22Nowzari, A. J7-1Nozaki, M. ED3-2Nozaki, M. TuP-ED-3Nozaki, M. TuP-ED-4Nunoue, S. ED3-6Nunoue, S. OD11-2Nunoue, S. OD11-3Nunoue, S. OD7-2Nunoue, S. TuP-ED-9Nurmikko, A.V. OD8-3Nuttall, L. OD4-4Nuttall, L.P. CR13-2

— O —Oda, M. MoP-OD-28Oda, M. ThP-ED-33Oda, O. TuP-GR-28Oda, O. TuP-GR-29Odnoblyudov, V. GR12-7O’Donnell, K.P. CR4-2ODonnell, K.P. OD4-7Ogasawara, T. GR2-6Ogihara, M. TuP-OD-27Ogimoto, J. OD8-2Ogiso, H. MoP-CR-13Ogura, M. CR9-5Oh, C.-H. ThP-OD-17

Oh, J. CR15-3Oh, S. ED14-5Oh, S. GR10-2Oh, S. MoP-OD-15Oh, S. MoP-OD-16Oh, S. MoP-OD-17Oh, S. MoP-OD-27Oh, S. OD12-2Oh, S. ThP-OD-19Ohachi, T. ThP-CR-20Ohara, J. CR7-3Ohara, M. OD8-1Ohashi, H. ED8-5Ohi, A. CR7-4Ohkawa, K. MoP-OD-31Ohkawa, K. OD13-6Ohkawa, K. OD6-1Ohkubo, T. CR2-3Ohl, F. OD2-4Ohlsson, B. GR2-3Ohlsson, B. J7-1Ohnishi, K. GR9-7Ohnishi, T. CR7-4Ohno, H. J7-6Ohori, D. MoP-OD-19Ohori, D. TuP-OD-24Ohshima, T. ThP-CR-10Ohshita, Y. TuP-ED-34Ohta, H. ED5-2Ohta, H. MoP-ED-1Ohta, H. ThP-ED-7Ohtaki, S. GR15-3Ohtani, N. TuP-GR-20Ohtani, N. TuP-GR-35Ohtani, N. TuP-GR-36Ohtsuka, M. GR11-8Ohya, M. ThP-GR-10Ohya, M. ThP-OD-24Okada, H. GR6-2Okada, N. CR3-5Okada, N. CR5-5Okada, N. GR12-8Okada, N. GR9-3Okada, N. GR9-5Okada, N. ThP-ED-2Okada, N. ThP-GR-7Okada, T. ThP-ED-6Okamoto, K. CR14-2Okamoto, K. CR3-4Okamoto, N. ThP-GR-33Okayama, Y. GR15-6Okayama, Y. GR15-7Oki, K. CR6-1Okumura, H. ED13-2Okumura, H. GR11-1Okumura, T. TuP-CR-26

DRAFT


Okuno, H. CR2-4Okuno, H. TuP-GR-33Okura, K. TuP-GR-11Oliver, R. CR13-5Oliver, R. TuP-CR-6Oliver, R.A. CR1-3Oliver, R.A. CR13-2Oliver, R.A. CR5-6Oliver, R.A. CR5-7Oliver, R.A. CR7-5Oliver, R.A. J1-3Oliver, R.A. MoP-CR-18Oliver, R.A. OD11-1Oliver, R.A. OD4-4Oliver, R.A. ThP-CR-25Oliver, R.A. TuP-CR-2Oliver, R.A. TuP-OD-25Omori, M. ED2-1Omori, M. ED2-6Omori, M. ED3-7Omoya, H. ThP-OD-2Omura, K. J4-5Onabe, K. GR16-6Onda, S. CR7-3Ono, H. TuP-ED-9Onodera, T. OD11-3Onuma, T. ThP-OD-12Onuma, T. TuP-ED-12Ooe, Y. CR14-5Ooe, Y. ThP-CR-14Oozeki, D. GR15-2Oozeki, D. GR15-3Orlova, M. MoP-OD-7Orlova, M. TuP-GR-7Orozco Hinostroza, I.

TuP-OD-15Ortlepp, T. TuP-OD-4Osada, Y. ED3-7Osada, Y. OD10-3Osaki, K. GR11-4Osawa, A. GR11-4Oshiyama, A. CR5-2Oshiyama, A. ThP-GR-31Osinnykh, I.V. MoP-CR-4Osman, B. TuP-ED-18Ostermaier, C. CR8-1Osvald, J. MoP-ED-26Oswald, J. ThP-GR-15Ota, Y. TuP-CR-32Ota, h. TuP-CR-13Oto, T. CR14-2Otoki, Y. CR11-1Otsuki, S. GR13-3Ottaviani, A. ED13-5Otto, I. OD9-1Ou, S.-L. OD11-5

Ou, S.-L. ThP-OD-3Ouyang, X. OD3-7Oyobiki, T. ED3-5Ozaki, K. MoP-ED-21Ozaki, T. OD6-3Ozaki, T. ThP-ED-8

— P —Page, R. ED4-1Page, R. OD1-3Pagnano, D. ED6-5Pagowska, K. ED12-3Paipulas, D. ThP-ED-24Pal, P. MoP-OD-26Palacios, T. ED13-2Palacios, T. ED13-7Paliwal, A.S. MoP-OD-10Palmstrøm, C.J. TuP-GR-6Pampili, P. J4-1Pan, D. ED12-8Panda, A.K. ThP-ED-39Panda, P. ThP-GR-18Pang, H. TuP-OD-22Pangrác, J. ThP-GR-15Pant, R. ThP-ED-28Pant, R.K. OD3-2Pant, R.K. ThP-ED-29Pantle, F. MoP-GR-26Parbrook, P.J. CR10-1Parbrook, P.J. J4-1Parikh, P. ED15-6Parish, G. CR9-6Parish, G. ED7-3Parish, G. ED7-4Parish, G. ThP-CR-16Park, C. TuP-CR-10Park, C. TuP-OD-30Park, H.-H. ThP-ED-21Park, J. ThP-OD-19Park, J.-H. TuP-GR-34Park, J.-H. TuP-OD-18Park, K. TuP-OD-23Park, K.-H. MoP-OD-13Park, K.-H. ThP-ED-21Park, M.-D. TuP-GR-34Park, S.-H. CR15-3Park, S.-H. ThP-OD-26Park, S.-J. MoP-OD-13Park, S.-J. MoP-OD-15Park, S.-J. OD12-2Park, T. OD15-6Park, Y. CR15-3Park, Y. J7-2Park, Y. MoP-OD-11Park, Y. MoP-OD-3Park, Y. ThP-OD-20

Pasayat, S. ED11-7Pascal, E. CR10-1Pascal, E. CR10-2Passow, T. OD3-5Passow, T. ThP-OD-4Paszkowicz, W. GR6-1Pathak, R. ED14-8Patra, S.K. CR9-1Patriarche, G. MoP-CR-15Paulillo, B. CR15-6Pavelescu, E.-M. MoP-CR-7Pavlidis, G. CR16-4Pavlidis, G. ED9-2Pavlidis, S. ED12-1Pavloudis, T. TuP-CR-34Pearce, E. CR7-5Pearton, S. MoP-ED-27Pecchia, A. OD5-4Pecheux, R. ED4-3Pécz, B. MoP-CR-17Pécz, B. TuP-ED-8Peiner, E. ED7-1Pendem, V. MoP-OD-33Peng, L.-L. TuP-OD-35Peng, M. MoP-OD-9Pennachio, D.J. TuP-GR-6Peretti, J. CR1-5Peretti, J. CR15-4Perez, J.Z. J3-3Perlin, P. CR3-2Perlin, P. OD1-7Perlin, P. OD13-1Perlin, P. OD4-2Perlin, P. OD4-6Perlin, P. OD9-5Perlin, P. ThP-OD-14Perlin, P. ThP-OD-18Perlin, P. ThP-OD-29Perlin, P. TuP-CR-3Persson, I. TuP-GR-32Persson, P. TuP-GR-32Peter, M. OD9-1Petrov, S.I. ThP-GR-17Petrusha, I. ThP-GR-2Petrusha, I. ThP-GR-3Petzold, S. CR1-6Petzold, S. CR14-4Petzold, S. CR2-5Peyra, H. MoP-CR-3Peyre, H. J5-1Peyre, H. ThP-CR-22Pham, T.T. MoP-ED-7Phu, N. MoP-GR-28Phu, N. MoP-GR-29Pickrell, G.W. J2-1Pickrell, G.W. MoP-CR-35

DRAFT


Pieniak, K. OD4-6Pieniak, K. TuP-CR-3Pimpinelli, A. GR10-6Piotrowska, A. ED12-3Piotrowska, A. TuP-ED-32Piotrzkowski, R. CR8-5Piskorska-Hommel, E. GR6-1Piskorska-Hommel, E.

ThP-GR-36Ploch, N.L. OD15-4Pobegen, G. CR8-1Podlipskas, Z. ThP-CR-6Pogany, D. CR8-1Pohorelec, O. TuP-ED-8Poliani, E. CR8-2Polushkin, E. MoP-OD-36Pomeroy, J.W. MoP-CR-16Porowski, S. ThP-GR-2Porowski, S. ThP-GR-3Portail, M. ThP-GR-19Portz, V. CR11-5Pouladi, S. ED14-5Pouladi, S. GR10-2Prabhu, S. ED6-4Prades, J. OD2-2Prades, J. OD7-6Pradipto, A. MoP-GR-30Pradipto, A.M. GR13-6Pradipto, A.M. TuP-CR-31Prakash, N. MoP-OD-26Pratiyush, A.S. ED12-5Pratiyush, A.S. MoP-ED-8Pratiyush, A.S. TuP-OD-7Prescher, M. GR12-2Pristovsek, M. GR13-4Pristovsek, M. GR16-5Pristovsek, M. GR7-2Pristovsek, M. J6-6Pristovsek, M. OD2-5Prozheev, I. TuP-CR-28Prystawko, P. TuP-ED-32Puchalski, A. GR4-3Puchtler, T. J1-3Puchtler, T. OD4-4Puchtler, T.J. CR13-2Puchtler, T.J. TuP-OD-25Puranto, P. ED7-1Püsche, R. ThP-GR-38Puttaswamy, S. ED7-5

— Q —Qi, H. GR2-4Qiang, W. TuP-GR-16Qin, Z. CR12-5Qin, Z. GR2-5Qiu, P. MoP-OD-9

Qiu, R. TuP-OD-28Qiu, X. MoP-GR-4Qu, H. MoP-GR-23Quay, R. ED4-2Quay, R. TuP-GR-12

— R —R, L. MoP-GR-10Ra, Y.-H. TuP-GR-14Rabinovich, O. MoP-OD-7Rabinovich, O. TuP-GR-25Rabinovich, O. TuP-GR-7Rackauskas, B. ED6-2Radhakrishnan, K.

ThP-ED-26Raghavan, S. ED6-4Raghavan, S. MoP-ED-16Raghavan, S. MoP-GR-11Raghavan, S. OD13-4Raghavan, S. OD3-6Raghavan, S. TuP-OD-6Rajan, S. CR12-7Rajpalke, M.K. ThP-GR-37Ramaseshan, R. ThP-GR-18Ramirez, A. ED7-2Ranjan, A. ThP-ED-26Rao, G.M. TuP-GR-26Rao, S.P. GR5-3Rao, V. ED14-8Raphael Butté, R. CR15-7Rass, J. OD14-4Rass, J. OD14-6Rass, J. OD15-4Rathkanthiwar, S.

MoP-ED-16Rathkanthiwar, S.

MoP-GR-11Rathkanthiwar, S. OD13-4Rathkanthiwar, S. OD3-6Rathkanthiwar, S. TuP-OD-6Ratschinski, I. TuP-CR-29Rawal, D.S. TuP-CR-20Rawat, A. ThP-CR-24Rawat, A. ThP-ED-17Rawat, A. ThP-ED-37Reddy, P. CR8-7Reddy, P. ED12-1Reddy, P. ED14-2Reddy, P. GR1-1Reddy, P. GR1-2Reddy, P. GR1-3Reddy, P. GR2-1Reddy, P. J5-5Reddy, P. ThP-ED-30Reeves, B.A. ThP-GR-14Regan, E.J. ED4-1

Rehm, R. OD3-5Rehm, R. ThP-OD-4Reich, C. CR12-2Reich, C. GR5-6Reich, C. J4-2Reich, C. OD15-3Reich, C. OD16-5Reid, E.T. J6-4Reiner, M. OD3-3Reklaitis, I. MoP-GR-7Remesh, N. ED6-4Ren, B. ThP-CR-28Ren, B. TuP-ED-10Ren, B. TuP-OD-22Ren, C.X. OD11-1Ren, F. ED11-4Ren, F. ED12-8Ren, F. ED13-3Ren, F. ED2-4Ren, F. MoP-ED-27Ren, F. MoP-OD-24Ren, F. ThP-ED-15Ren, F. ThP-OD-22Ren, G. GR4-5Ren, G. ThP-GR-4Ren, Y. MoP-OD-22Rennesson, S. CR15-6Rennesson, S. CR6-2Rennesson, S. GR11-3Rennesson, S. MoP-CR-15Rennesson, S. OD10-5Rettig, O. GR2-4Réveret, F. CR6-2Reza, S. TuP-ED-16Richter, E. CR6-7Rigutti, L. J7-5Rigutti, L. J7-8Rishinaramangalam, A.

MoP-GR-23Ritter, D. TuP-ED-18Ritter, D. TuP-ED-22Robbins, M. ED12-1Robin, E. CR2-2Robin, Y. ED10-4Robin, Y. GR10-8Robin, Y. GR16-5Robin, Y. J1-1Robin, Y. OD2-5Robinson, Z. GR16-2Robinson, Z. TuP-GR-6Rodríguez Vázquez, Á.

MoP-OD-32Rodriguez, A.G. ThP-GR-23Roland, I. CR15-6Roland, I. OD10-5Romanczyk, B. ED11-7

DRAFT


Römer, F. ED10-3Römer, F. ED10-5Rong, X. CR12-5Roqan, I.S. MoP-CR-20Roqan, I.S. ThP-OD-25Rorsman, N. J2-2Rorsman, N. ThP-ED-19Rosenberg, S. GR16-2Rosenberg, S.G. TuP-GR-6Roshko, A. MoP-GR-32Rossbach, G. CR1-1Rossbach, G. ThP-CR-1Rossetti, M. OD9-4Rossow, U. CR3-3Rossow, U. J4-6Roul, B. OD3-2Roul, B. ThP-ED-29ROUL, B.K. ThP-ED-28Rousseau, I. CR14-1Rousset, J.-P. ThP-GR-36Rouviere, J.-L. GR6-5Rowley, A. GR16-2Rudinsky, M. ED5-3Rudinsky, M. GR16-4Rudolph, M. TuP-ED-22Rudzinski, M. MoP-CR-6Rupper, G. CR12-6Ruschel, J. OD14-4Ruschel, J. OD14-6Ruschel, J. OD15-4Ruterana, P. MoP-GR-3Rutz, F. OD3-5Rutz, F. ThP-OD-4Ruzzarin, M. ED11-1Ruzzarin, M.S. MoP-ED-23Ryan, M. CR10-1Ryoki, N. J7-6Ryou, J.-H. ED14-5Ryou, J.-H. GR10-2Ryu, J. CR15-3Rzheutski, M.V. ThP-GR-17

— S —Saavedra, A. CR14-4Sadaf, S. TuP-GR-22Sadaf, S.M. ThP-GR-9Sadovyi, B. ThP-GR-2Sadovyi, B. ThP-GR-3Sadovyi, P. ThP-GR-2Sadovyi, P. ThP-GR-3Saha, D. ED10-6Saha, D. MoP-ED-15Saha, D. MoP-OD-33Saha, D. ThP-CR-24Saha, D. ThP-ED-17Saha, D. ThP-ED-37

Saha, D. ThP-ED-40Saha, D. ThP-ED-5Saha, D. TuP-ED-30Saha, D. TuP-ED-31Sahonta, S.-L. CR5-7Sahonta, S.-L. TuP-CR-2Saito, T. J7-4Saito, Y. GR2-6Saito, Y. ThP-OD-2Sakai, A. CR5-1Sakai, A. CR5-3Sakai, A. CR7-2Sakakita, H. MoP-CR-13Sakamoto, M. ThP-GR-11Sakane, Y. TuP-OD-2Sakata, M. ThP-OD-1Sakata, O. TuP-CR-27Sakowski, S. GR3-4Sakowski, S. GR9-6Sakuragi, Y. GR5-2Sakuragi, Y. OD16-4Sakuragi, Y. OD16-7Sakurai, H. ED2-6Sakurai, H. ED3-7Sameshima, J. MoP-CR-9Samizadeh Nikoo, M. ED13-6Samsudin, M. TuP-OD-9Samuel, B. OD6-2Samuelson, L. GR2-3Samuelson, L. J7-1Samukawa, S. MoP-OD-19Samukawa, S. ThP-ED-8Samukawa, S. TuP-OD-24Sánchez-Arribas, I. CR14-1Sánchez-Garcia, M. CR14-4Sánchez-García, M.A. J5-2Sang, L. ThP-CR-28Sang, L. TuP-ED-10Sang, L. TuP-ED-12Sangiovanni, D. MoP-GR-9Sanguinetti, S. TuP-GR-24Sanguinetti, S. TuP-GR-4Sanguinetti, S. TuP-GR-5Sanguinetti, S. TuP-GR-9Santoruvo, G. ED10-7Santoruvo, G. ED13-1Sanyal, I. GR12-6Sarkar, B. ED12-1Sarkar, B. GR1-1Sarkar, B. GR1-2Sarkar, B. GR2-1Sarkar, B. J5-5Sarkar, B. OD16-1Sarkar, B. ThP-ED-30SARKAR, R. ThP-GR-21Sarney, W.L. MoP-CR-8

Sasada, M. TuP-ED-6Sasaki, M. TuP-OD-29Sasaki, T. GR8-1Sato, K. GR2-2Sato, K. OD16-7Sato, S. MoP-GR-22Sato, S.-i. ThP-CR-10Sato, T. ED5-1Sato, Y. GR7-3Sato, Y. J5-4Sato, Y. ThP-CR-20Sato, Y. TuP-GR-18Sauvage, S. CR15-6Sauvage, S. OD10-5Savchuk, A. MoP-OD-7Savchuk, A. TuP-GR-25Savchuk, A. TuP-GR-7Sawicka, M. CR1-6Sawicka, M. OD1-2Sawicki, M. ED14-4Sawicki, M. GR6-1Sawicki, M. MoP-CR-29Sawicki, M. ThP-ED-22Sawicki, M. TuP-CR-15Schell, H. CR8-2Schiavon, D. OD4-6Schiavon, D. OD9-5Schiavon, D. ThP-OD-14Schiavon, D. ThP-OD-18Schied, M. GR14-2Schilling, M. CR11-4Schimpke, T. ThP-CR-1Schlichting, S. CR6-3Schliwa, A. CR14-6Schliwa, A. ThP-ED-34Schliwa, A. ThP-OD-31Schmidt, B. OD2-4Schmidt, G. CR1-6Schmidt, G. CR12-5Schmidt, G. CR13-6Schmidt, G. CR14-4Schmidt, G. CR2-5Schmidt, G. J4-7Schnedler, M. CR11-5Schniedereit, M. J7-7Scholz, D. OD9-1Scholz, F. GR2-4Scholz, F. J7-7Scholz, G. OD2-2Scholz, G. OD7-6Scholz, J.-P. GR2-4Schowalter, L. ThP-OD-6Schowalter, L.J. GR5-3Schowalter, L.J. OD15-1Schultz, B. GR12-5Schulz, S. CR1-3

DRAFT


Schulz, S. CR9-1Schulz, S. TuP-CR-6Schulz, S. TuP-OD-19Schulz, T. CR1-4Schulz, T. CR1-6Schürmann, H. CR13-6Schürmann, H. CR2-5Schütt, S. GR12-2Schwarz, U. OD14-6Schwarz, U.T. OD4-1Schwarz, U.T. ThP-CR-1Schwarz, U.T. ThP-OD-11Schwarz, U.T. TuP-OD-19Schwarz, U.T. TuP-OD-31Schwarz, U.T. TuP-OD-32Scully, C. ThP-OD-6Seibt, M. TuP-OD-12Seidel, S. TuP-ED-13Seifertova, A. MoP-CR-17Seifertová, A. TuP-ED-8Seiki, R. J7-3Sekiguchi, H. GR6-2Sekiguchi, H. OD2-7Sekiguchi, T. CR14-3Sekiguchi, T. CR2-3Sekiguchi, T. ThP-CR-12Selvaraj, L. OD14-6Semond, F. CR15-6Semond, F. CR6-2Semond, F. GR11-3Semond, F. MoP-CR-15Semond, F. OD10-5Senesky, D.G. ED7-2Seneza, C. OD1-5Seo, K. TuP-ED-21Seo, K.-S. ED14-6Seo, K.-S. ThP-ED-16Seo, K.-S. TuP-ED-11Seo, K.-S. TuP-ED-15Seo, K.-S. TuP-ED-2Seo, O. TuP-CR-27Seong, T.-Y. MoP-OD-11Seong, T.-Y. MoP-OD-27Seong, T.-Y. MoP-OD-3Seong, T.-Y. ThP-OD-20Serafinczuk, J. MoP-CR-6Seta, Y. GR13-6Shaffer, G. MoP-GR-23Shahab, M. ThP-ED-31Shahbaz, J. J7-7Shaji, A.K. ED10-6Shapoval, S. MoP-OD-36Sharma, C. TuP-CR-20Shaw, J. CR5-7Shaw, J. TuP-CR-2Sheehan, C. OD12-3

Shen, B. CR12-5Shen, B. CR13-3Shen, B. CR4-6Shen, B. CR8-3Shen, B. ED14-1Shen, B. GR10-1Shen, B. GR16-1Shen, B. GR2-5Shen, B. GR8-6Shen, B. MoP-OD-34Shen, B. OD12-4Shen, B. ThP-OD-28Shen, B. TuP-CR-12Shen, B. TuP-GR-38Shen, J. GR8-6Shen, J.-L. MoP-GR-28Shen, J.-L. MoP-GR-29Shen, L. ED15-6SHEN, X. GR11-1Sheng, B. CR12-5Sheng, B. CR13-3Sheng, B. CR4-6Sheng, B. ED14-1Sheng, B. GR16-1Sherman, D. TuP-ED-26Shervin, K. GR10-2Shervin, S. ED14-5Shervin, S. GR10-2Shi, L. CR8-3Shi, L. TuP-GR-3Shi, X. ED14-1Shi, X. OD10-6Shi, Y. ED13-3Shi, Y. ED2-4Shi, Z. MoP-GR-18Shi, Z. ThP-CR-30Shiau, B.-W. ThP-OD-3Shibata, T. OD10-3Shibuya, K. CR3-5Shida, K. CR5-3Shields, P.A. CR10-2Shields, P.A. J1-5Shields, P.A. ThP-OD-21Shigefuji, Y. GR9-3Shigekawa, N. ThP-ED-10Shigekawa, N. TuP-CR-18Shigeta, Y. ThP-GR-31Shih, C.-w. OD2-1Shim, J.-I. OD5-2Shim, J.-I. ThP-OD-17Shima, K. CR6-6Shima, K. J6-3Shimai, K. MoP-ED-5Shimauchi, M. TuP-CR-21Shimizu, M. CR7-3Shimizu, M. GR11-1

Shimizu, M. J2-5Shimizu, M. MoP-CR-13Shimizu, M. MoP-ED-21Shimizu, M. MoP-ED-3Shimizu, M. MoP-GR-35Shimizu, M. TuP-ED-4Shimizu, M. TuP-OD-24Shimizu, N. TuP-GR-28Shimizu, N. TuP-GR-29Shimizu, T. OD13-6Shimura, T. ED3-2Shimura, T. TuP-ED-3Shimura, T. TuP-ED-4Shin, D.-S. OD5-2Shin, D.-S. ThP-OD-17Shindome, A. ED3-6Shindome, A. TuP-ED-9Shinohara, K. ED4-1Shiojima, K. ED11-6Shiojima, K. ThP-ED-8Shiojima, K. TuP-CR-25Shiomi, K. OD7-2Shiozaki, K. ED2-1Shiozaki, K. ED2-2Shiozaki, K. PL-3Shirai, S. MoP-CR-25Shiraishi, K. CR5-2Shiraishi, K. MoP-GR-34Shiraishi, K. ThP-CR-34Shiraishi, K. ThP-GR-31Shiraishi, K. ThP-GR-33Shiraishi, T. ThP-CR-27Shiraiwa, M. OD7-3Shirasawa, R. MoP-CR-32Shiu, G.-Y. ThP-OD-13Shivaprasad, S. TuP-CR-19Shojiki, K. CR14-1Shojiki, K. CR2-6Shojiki, K. GR7-4Shojiki, K. GR7-5Shojiki, K. OD15-7Shreter, Y. ThP-OD-33Shreter, Y. TuP-GR-1Shubina, T. J1-2Shulenkov, V.A. ThP-GR-17Siche, D. CR8-2Sidor, A. GR3-4Sidor, A. GR9-2Sidor, A. GR9-4Sidor, A. GR9-6Siekacz, M. CR1-6Siekacz, M. OD1-2Siekacz, M. OD1-7Siekacz, M. OD4-2Siekacz, M. TuP-CR-3Sik, J. ED5-3

DRAFT


Sim, Y. OD12-5Sim, Y. ThP-CR-5Simin, G. ThP-ED-31Simon, V. ThP-OD-11Singh, A.K. OD4-7Singh, D.K. OD3-2Singh, D.K. ThP-ED-28Singh, D.K. ThP-ED-29Singh, K. MoP-OD-10Singh, M. ED6-1Singh, M. MoP-OD-26Singh, R. ED14-8Singh, R. TuP-CR-20Singh, S.P. MoP-OD-26Sinito, C. GR14-6Sinito, C. J3-6Sintonen, S. MoP-CR-28Sitar, Z. CR5-4Sitar, Z. CR7-7Sitar, Z. CR8-7Sitar, Z. ED12-1Sitar, Z. ED14-2Sitar, Z. GR1-1Sitar, Z. GR1-2Sitar, Z. GR1-3Sitar, Z. GR2-1Sitar, Z. J5-5Sitar, Z. OD16-1Sitar, Z. ThP-ED-30Skapas, M. ThP-CR-18Skierbiszewski, C. CR3-2Skierbiszewski, C. GR14-5Skierbiszewski, C. OD1-2Skierbiszewski, C. OD1-3Skierbiszewski, C. OD1-7Skierbiszewski, C. OD4-2Skierbiszewski, C.

TuP-CR-3Slight, T. OD13-1Smalc-Koziorowska, J.

CR7-6Smalc-Koziorowska, J.

OD9-5Smalc-Koziorowska, J.

ThP-OD-14Smalc-Koziorowska, J.

TuP-CR-16Smalc-Koziorwska, J.

ThP-CR-13Smith, P. ED15-6So, B. GR5-4So, B. ThP-ED-32So, B. ThP-GR-32So, B. TuP-OD-23So, J. MoP-OD-16So, J. MoP-OD-17

So, J. TuP-OD-21Sobanska, M. CR12-3Sobanska, M. ThP-GR-35Sobanska, M.M. J3-5Sochacki, T. GR3-4Sochacki, T. GR3-6Sochacki, T. GR4-3Sochacki, T. GR9-2Sochacki, T. GR9-4Sochacki, T. GR9-6Sochacki, T. MoP-CR-28Sohi, P. GR12-3Sohi, P. GR12-4Solanke, S. TuP-OD-6Soleiman, R. ED9-3Soleimanzadeh, R. ED9-1Som, S. J1-7Son, D.-H. ED10-2Son, D.-H. TuP-ED-29Son, K. OD15-6Son, K. ThP-OD-19Sone, N. CR14-7Sone, N. ThP-GR-10Sone, N. ThP-OD-24Sonehara, S. TuP-ED-7Song, C. TuP-CR-27Song, F. TuP-ED-20Song, H. MoP-CR-5Song, H. OD12-5Song, H. ThP-OD-9Song, H. TuP-OD-30Song, H.G. MoP-CR-27Song, J. GR13-2Song, J.-O. MoP-OD-27Song, K. J6-5Song, K. ThP-GR-24Song, Y. MoP-OD-9Song, Y. ThP-OD-5Sotta, D. OD6-2Spagnoli, D. CR9-6von Spakovsky, M.R. GR1-5Spasevski, L. CR12-7Spasevski, L. GR5-6Spasevski, L. J4-2Spasevski, L. MoP-CR-20Speck, J. CR1-5Speck, J. CR2-2Speck, J. OD12-7Speck, J.S. CR1-7Speck, J.S. CR15-1Speck, J.S. CR15-4Speck, J.S. CR9-2Speck, J.S. OD6-6Speck, J.S. TuP-OD-9Spende, H. CR15-5Spende, H. ED10-3

Spende, H. J3-2Spende, H. OD11-7Springbett, H. CR13-5Springbett, H.P. CR13-2Springbett, H.P. ThP-CR-25Springbett, H.P. TuP-OD-25Stanczyk, S. OD13-1Stanczyk, S. OD4-6Stanionyte, S. ThP-CR-18Staszczak, G. CR3-2Staszczak, G. OD5-5Staszczak, G. ThP-OD-27Staszczak, G. TuP-CR-16Staszczak, G. TuP-CR-3Stavrevski, D. ThP-CR-10Steiger, N. GR2-4Stoffels, S. ED8-3Stoffels, S. MoP-CR-16Stoklas, R. GR12-1Stoklas, R. TuP-ED-8Storm, D. GR12-5Storm, D.F. CR6-7Storm, K. J7-1Straßburg, M. J3-4Strassburg, M. OD9-1Strassburg, M. ThP-CR-1Sträter, H. GR1-7Strelchuk, V.V. ThP-GR-2Strelchuk, V.V. ThP-GR-3Strempel, K. CR15-5Strempel, K. ED10-3Strempel, K. ED10-5Strempel, K. OD11-7Strempel, K. OD2-2Stricklin, I. J2-1Strittmatter, A. CR13-6Strittmatter, A. CR2-5Strittmatter, A. CR8-2Strittmatter, A. GR7-6Strittmatter, A. J4-7Strittmatter, A. OD1-5Strittmatter, A. OD2-4Stutzmann, M. CR11-6Stutzmann, M. MoP-GR-26Su, J. ED14-1Su, X. GR4-5Su, X. ThP-GR-4Su, X.J. MoP-CR-30Suchocki, A. ThP-CR-15Suda, J. CR10-5Suda, J. CR11-1Suda, J. CR11-2Suda, J. CR16-1Suda, J. CR16-2Suda, J. ED2-6Suda, J. ED3-7

DRAFT


Suda, J. ED6-3Suemitsu, T. CR10-3Suemitsu, T. ThP-ED-8Suga, T. ED5-4Sugawara, Y. CR5-5Sugie, R. MoP-CR-9Sugiyama, M. OD13-7Sugiyama, M. OD6-5Suihkonen, S. ED13-2Sukegawa, A. GR6-2Sukkaew, P. TuP-GR-17Sukkaew, P. TuP-GR-32Sulaiman, A.B. MoP-GR-19Sulaiman, A.B. TuP-OD-10Sulmoni, L. OD15-3Sulmoni, L. OD16-5Sumi, T. GR15-6Sumi, T. GR15-7Sumita, M. ThP-CR-17Sumitani, K. CR5-3Sumitani, K. J7-3Sumiya, M. ThP-CR-17Sumiya, M. ThP-CR-28Sumiya, M. TuP-ED-10Sumiya, M. TuP-ED-12Sun, B. MoP-OD-25Sun, C. OD12-4Sun, C. ThP-GR-34Sun, H. OD11-6Sun, J. ED6-5Sun, Q. ED4-4Sun, Q. MoP-ED-2Sun, Q. OD9-2Sun, W. CR9-7Sun, W. MoP-GR-31Sun, X. CR13-3Sun, X. MoP-GR-18Sun, X. ThP-CR-30Sun, Y. ED7-5Sun, Y. GR11-6Sun, Y. GR2-5Sundaramoorthy, V. CR8-6Sung, H. MoP-OD-27Supangat, A. MoP-GR-17Supangat, A. MoP-GR-37Supangat, A. TuP-GR-27Surana, V. ThP-CR-24Surana, V. ThP-ED-17Surapaneni, S. TuP-ED-31Susilo, N. CR11-4Susilo, N. GR7-1Susilo, N. OD15-3Susilo, N. OD16-5Suski, T. CR3-2Suski, T. MoP-CR-34Suski, T. OD1-7

Suski, T. OD13-1Suski, T. OD4-2Suski, T. OD4-6Suski, T. OD5-5Suski, T. OD9-5Suski, T. ThP-CR-13Suski, T. ThP-OD-27Suski, T. ThP-OD-29Suski, T. TuP-CR-16Suski, T. TuP-CR-3Suwito, G.R. TuP-OD-8Suzuki, A. CR14-7Suzuki, A. ThP-GR-10Suzuki, A. ThP-OD-24Suzuki, H. ED2-6Suzuki, K. ThP-ED-2Suzuki, T. GR3-1Suzuki, T. GR5-3Suzuki, T.T. CR7-4Svensson, S.P. MoP-CR-8Svitsiankou, I.E.

ThP-GR-17Svrcek, V. MoP-GR-7Syamsu, I. ED7-1Syamsu, I. OD7-6Sylvia Hagedorn, S. OD15-4Szerling, A. ED12-3Sztenkiel, D. ED14-4Sztenkiel, D. GR6-1Sztenkiel, D. TuP-CR-15Szukiewicz, R. GR6-1Szymanski, D. ED12-1

— T —Tabataba-Vakili, F. CR15-6Tabataba-Vakili, F. OD10-5Tabuchi, T. CR3-5Tabuchi, T. ThP-GR-20Tacken, F. CR6-5Tada, Y. CR8-4Tadatomo, K. CR3-5Tadatomo, K. CR5-5Tadatomo, K. GR12-8Tadatomo, K. GR9-3Tadatomo, K. GR9-5Tadatomo, K. ThP-ED-2Tadatomo, K. ThP-GR-7Tagawa, M. CR7-3Tai, T.-Y. J1-4Tajalli, A. ED11-1Tajalli, A. ED15-3Tajima, J. OD11-2Tajima, J. OD7-2Takada, N. MoP-ED-21Takada, N. MoP-ED-3Takagi, H. OD10-3

Takagi, K. J7-3Takahashi, K. TuP-ED-7Takahashi, M. ThP-GR-5Takahashi, T. J2-5Takahashi, T. MoP-GR-35Takahashi, T. MoP-OD-19Takahashi, T. TuP-ED-4Takahashi, Y. CR5-5Takahashi, Y. GR10-4Takahasi, M. GR8-1Takamiya, K. TuP-GR-11Takarabe, K. TuP-GR-20Takashima, S. CR2-3Takashima, S. CR6-6Takashima, S. ED2-5Takashima, S. ED3-1Takashima, S. TuP-ED-5Takebayashi, M. CR14-7Takebayashi, M. ThP-GR-10Takeda, H. ThP-GR-28Takekawa, N. GR15-1Takekawa, N. GR15-2Takekawa, N. ThP-GR-5Takemoto, K. ThP-CR-20Takeuchi, T. CR14-3Takeuchi, T. CR14-7Takeuchi, T. GR13-3Takeuchi, T. GR2-2Takeuchi, T. GR2-6Takeuchi, T. GR5-2Takeuchi, T. GR7-3Takeuchi, T. J4-4Takeuchi, T. J7-4Takeuchi, T. OD16-4Takeuchi, T. OD16-7Takeuchi, T. OD3-1Takeuchi, T. OD3-4Takeuchi, T. OD5-3Takeuchi, T. OD8-2Takeuchi, T. OD9-3Takeuchi, T. ThP-GR-10Takeuchi, T. ThP-GR-12Takeuchi, T. ThP-OD-1Takeuchi, T. ThP-OD-23Takeuchi, T. ThP-OD-24Takeuchi, T. TuP-GR-18Takhar, K. ThP-ED-5Taki, T. OD9-1Takino, J. GR15-6Takino, J. GR15-7Talalaev, R. ED5-3Talalaev, R. GR16-4Talalaev, R. J4-3Taliercio, T. J1-1Talik, A. TuP-GR-27Talin, A.A. J2-1

DRAFT


Tamada, K. CR3-4Tamai, Y. GR6-2Tamulaitis, G. CR4-4Tamulaitis, G. CR4-5Tamulaitis, G. MoP-CR-7Tamulaitis, G. MoP-GR-5Tamulaitis, G. ThP-CR-6Tamura, K. MoP-CR-31Tan, S. ThP-ED-18TAN, S.-C. OD7-4Tan, W. ED14-1Tanabe, R. OD11-3Tanahashi, Y. MoP-CR-9Tanaka, A. CR10-3Tanaka, A. CR5-2Tanaka, A. ED1-4Tanaka, M. OD8-1Tanaka, R. TuP-ED-5Tanaka, Y. ThP-ED-6Tang, C. ED15-4Tang, C. OD2-6Tang, G. CR16-5Tang, G. ED11-3Tang, G. ED8-1Tang, H. OD7-1Tang, H. ThP-GR-9Tang, H. TuP-GR-22Tang, J. ThP-CR-9Tang, K. TuP-ED-10Tang, X. MoP-ED-24Tang, X. OD7-7Tang, X. ThP-ED-14Tang, X. TuP-OD-28Taniguchi, T. J6-1Taniguchi, T. ThP-GR-6Tanikawa, T. CR10-3Tanikawa, T. CR7-1Tanikawa, T. GR9-7Tanikawa, T. J4-5Tanikawa, T. ThP-CR-27Tanimura, H. ED2-1Tanioka, Y. GR11-4Taniyasu, Y. J6-7Taniyasu, Y. OD16-3Tanner, D.S. CR1-3Tanner, P. ThP-ED-14Tao, R. OD10-1Tao, T. MoP-OD-24Tao, T. ThP-OD-22Tao, T. ThP-OD-32Tapajna, M. ED11-5Targowski, G. ThP-OD-27Targowski, G. TuP-CR-16Tasai, K. CR15-2Tashiro, T. OD10-3Tate, J. CR9-7

Tatebayashi, J. CR4-1Tatebayashi, J. GR8-2Tatebayashi, J. GR8-3Tatebayashi, J. OD6-4Tateishi, K. CR3-4Tatemizo, N. GR11-5Tatemizo, N. MoP-CR-2Taube, A. ED12-3Taube, A. TuP-ED-32Tauke-Pedretti, A.

MoP-CR-35Taylor, A. OD4-7Taylor, R.A. CR13-2Taylor, R.A. J1-3Taylor, R.A. OD4-4Taylor, R.A. TuP-OD-25Tazuke, D. OD11-2Tchernycheva, M. J1-7Tchernycheva, M. J3-6Tchernycheva, M. J7-5Teisseyre, H. GR9-2Teke, T. GR5-6Teke, T. J4-2Teke, T. J4-3Terai, T. GR7-3Terai, T. TuP-GR-18Terashima, D. TuP-ED-3Terashima, D. TuP-ED-4Terashima, W. OD4-3Terazawa, M. ThP-GR-10Terazawa, M. ThP-OD-24Then, H. ED13-8Thingujam, T. TuP-ED-29Thonke, K. CR10-4Thonke, K. GR2-4Thonke, K. ThP-CR-2Thorsell, M. J2-2Tian, A. MoP-OD-14Tian, A. MoP-OD-29Tian, A. TuP-CR-7Tian, A. TuP-CR-8Tian, A. TuP-CR-9Ticos, C. MoP-CR-7Timm, R. J7-1To, C. OD7-5Togashi, R. CR14-2Tohei, T. CR5-3Tohei, T. CR7-2Tokuda, H. MoP-ED-13Tokuda, H. ThP-ED-2Tokuda, H. TuP-CR-23Tokuda, H. TuP-ED-6Tokuda, Y. MoP-CR-31Tokuda, Y. ThP-CR-26Tokuda, Y. ThP-CR-29Tokuda, Y. TuP-CR-25

Tollabi Mazraehno, M.OD14-1

Tomasiunas, R. MoP-CR-7Tomasiunas, R. MoP-GR-7Tomasiunas, R. ThP-CR-18Tomek, C. MoP-GR-23Tominaga, Y. TuP-ED-7Tomita, K. CR16-1Tomita, K. CR6-4Tomita, K. ED5-7Tomita, K. ThP-CR-26Tomita, T. ThP-ED-6Tomita, Y. ThP-GR-20Tomiya, S. CR15-2Tomiya, S. MoP-CR-32Tomizuka, Y. ED12-2Tomm, J. CR1-4Tong, X. ED4-6Tong, X. TuP-CR-24Tot, J. ThP-GR-25Tot, J. ThP-GR-26Tottereau, O. ThP-GR-19Tournie, E. J1-1Toyama, D. MoP-GR-6Trager-Cowan, C. CR10-1Trager-Cowan, C. CR10-2Trager-Cowan, C. J1-5Trager-Cowan, C. ThP-CR-4Trampert, A. J5-2Tränkle, G. GR1-7Trassoudaine, A. J1-1Trassoudaine, A. OD2-5van Treeck, D. GR6-3Tripathy, S. ED12-5Tripathy, S. TuP-OD-7Trivellin, N. OD14-5Tsagaraki, K. ThP-GR-13Tsai, C.-C. ED7-5Tsai, T.-L. ThP-OD-13Tse, W. J3-1Tse, W. TuP-OD-20Tsuchida, Y. MoP-GR-35Tsuda, S. CR4-3Tsukamoto, S. TuP-GR-24Tsukamoto, S. TuP-GR-4Tsukamoto, S. TuP-GR-5Tsumuki, S. MoP-GR-30Tsuno, S. GR15-6Tsunooka, Y. CR7-3Tsuruta, S. ED8-5Tsutsui, K. ED8-5Tsutsui, K. J2-5Tsuzuki, S. MoP-CR-14Tsykaniuk, B. ThP-GR-2Tsykaniuk, B. ThP-GR-3Tu, C.-G. J3-1

DRAFT


Tu, L.-W. ED7-5Tu, L.-W. OD13-5Tu, L.-W. ThP-CR-7Tu, L.-W. TuP-CR-17Tu, L.-W. TuP-GR-23Tu, L.-W. TuP-GR-37Tumas, W. CR9-7Tungare, M. MoP-GR-12Tuomisto, F. TuP-CR-28Turkevich, V. ThP-GR-2Turkevich, V. ThP-GR-3Turski, H. GR14-5Turski, H. OD1-2Turski, H. OD1-3Turski, H. OD4-2Tóth, L. MoP-CR-17Tóth, L. TuP-ED-8Tweedie, J. GR1-1Tyagi, P. MoP-GR-36Tyagi, P. MoP-OD-23Tzaneva, B. ThP-GR-25

— U —Uchida, T. MoP-CR-9Uchino, M. CR9-3Udai, A. MoP-OD-33Udrea, F. ED6-5Ueda, H. CR10-5Ueda, H. ED6-3Ueda, S. MoP-ED-12Uedono, A. CR6-6Uedono, A. ThP-CR-17Uedono, A. TuP-ED-12Uehara, K. ThP-OD-12Uei, R. GR15-4Uemukai, M. OD11-2Uemukai, M. OD11-3Uemukai, M. OD7-2Uemura, K. ED5-1Uemura, M. MoP-CR-2Ueno, K. CR6-6Ueno, K. GR1-4Ueno, K. OD1-4Ueno, K. ThP-GR-11Ueno, K. TuP-ED-5Uenuma, M. CR8-4Uenuma, M. MoP-CR-24Uenuma, M. ThP-CR-23Uenuma, M. TuP-CR-13Uenuma, M. TuP-ED-1Uenuma, M. TuP-ED-7Uesugi, K. CR2-6Uesugi, K. GR7-4Uesugi, K. GR7-5Uesugi, K. OD15-7Uesugi, K. ThP-GR-8

Uesugi, T. CR10-5Uesugi, T. CR11-2Uesugi, T. ED6-3Ueta, A. J7-6Uetake, K. MoP-CR-23Uhlig, L. OD4-1Uhlig, L. TuP-OD-31Uhlig, L. TuP-OD-32Ujihara, T. CR7-3Umana-Membreno, G.A.ED7-4Umehara, N. J6-3Upadhyay, B.B. MoP-ED-15Upadhyay, B.B. TuP-ED-30Uraoka, Y. CR8-4Uraoka, Y. MoP-CR-24Uraoka, Y. ThP-CR-23Uraoka, Y. TuP-CR-13Uraoka, Y. TuP-ED-1Uraoka, Y. TuP-ED-7Uren, M.J. ED6-1Uren, M.J. ED6-2Uren, M.J. MoP-CR-16Urteaga, M. ED4-1Usami, N. GR10-8Usami, S. CR10-3Usami, S. ED1-4Usami, S. ED9-2Usami, S. GR10-4Ushida, S. OD3-4Uzdavinys, T. CR1-1Uzuhashi, J. CR2-3

— V —Vacek, P. CR5-6Vacek, P. MoP-CR-18Vadiee, E. ED14-3Vadiee, E. GR16-3Vadiee, E. ThP-ED-25Vainilovich, A.G.

ThP-GR-17Vallée, C. TuP-OD-29Vallo, M. J7-5Valvin, P. J1-2Valvin, P. J6-2Valvin, P. OD4-5Van der Lee, A. J6-2Vanco, L. GR12-1Vanco, L. MoP-GR-3Vasileiadis, I.G.

ThP-CR-13Vega, N.A. J4-7Veit, P. CR1-6Veit, P. CR12-5Veit, P. CR13-6Veit, P. CR14-4Veit, P. CR2-5

Velazquez-Rizo, M.MoP-OD-31

Velez, C. OD9-4Vennegues, P. GR11-3Vennegues, P. GR13-5Vennéguès, P. J5-1Vescan, A. OD13-2Vescan, A. TuP-ED-24Vesely, M. GR12-1Vesely, M. MoP-GR-3Vespucci, S. CR10-1Vézian, S. CR13-4Vézian, S. J1-2Vézian, S. J1-5Vidal Borbolla, M.A.

MoP-CR-22Vidal, M. ThP-GR-23Vidal, M. TuP-OD-15Videkov, V. ThP-GR-25Vilalta-Clemente, A.

CR10-1Vinayak, S. TuP-CR-20Virko, M. ThP-OD-33Virko, M. TuP-GR-1Visalli, D. ThP-GR-38Visvkarma, A.K. TuP-CR-20Vladimirova, M. OD4-5Vodapally, S. OD2-2Vogt, A. GR12-2Voronenkov, V. ThP-OD-33Voronenkov, V. TuP-GR-1Voss, T. CR15-5Vullum, P. MoP-OD-35Vullum, P. ThP-GR-22Vullum, P.-E. ThP-GR-37Vuong, A.T. ThP-ED-27Vuong, P. J6-2Vura, S. ED12-5Vura, S. OD13-4

— W —Waag, A. CR15-5Waag, A. ED10-3Waag, A. ED10-5Waag, A. ED7-1Waag, A. J3-2Waag, A. J3-4Waag, A. OD11-4Waag, A. OD11-7Waag, A. OD2-2Waag, A. OD7-6Waag, A. TuP-OD-12Waag, A. TuP-OD-13Wachs, M. OD4-1Wachs, M. ThP-OD-11Wachs, M. TuP-OD-19

DRAFT


Wachs, M. TuP-OD-31Wachs, M. TuP-OD-32Wada, K. TuP-GR-35Wada, M. ThP-CR-20Wadekar, P. OD13-5Wadekar, P.V. ED7-5Wadekar, P.V. TuP-CR-17Wadekar, P.V. TuP-GR-23Wadekar, P.V. TuP-GR-37Wagenbach, C. GR16-2Wagenbach, C. TuP-GR-6Wagner, M.R. CR13-4Wagner, M.R. CR14-6Wagner, M.R. CR6-3Wagner, M.R. CR8-2Wagner, M.R. OD14-1Wakabayashi, H. ED8-5Wakabayashi, H. J2-5Wakahara, A. GR6-2Wakamatsu, A. TuP-CR-1Walde, S. CR10-2Walde, S. CR7-7Walde, S. GR7-1Walde, S. J1-5Walde, S. OD15-4Wallace, M. CR4-2Wallenberg, L. J7-1Wallenberg, R. GR2-3Wallis, D.J. CR5-6Wallis, D.J. CR5-7Wallis, D.J. MoP-CR-18Wallis, D.J. TuP-CR-2Walton, S. GR16-2Wan, H. MoP-OD-8Wang, C. ThP-OD-28Wang, C. TuP-GR-3Wang, D. ED14-1Wang, D. TuP-OD-22Wang, G. TuP-OD-5Wang, J. ED14-7Wang, J. ED7-3Wang, J. GR11-2Wang, J. GR4-5Wang, J. MoP-CR-12Wang, J. MoP-GR-14Wang, J. MoP-OD-18Wang, J. MoP-OD-2Wang, J. OD12-4Wang, J. OD9-2Wang, J. ThP-CR-16Wang, J. ThP-GR-34Wang, J. ThP-OD-15Wang, J. TuP-GR-21Wang, J. TuP-GR-3Wang, J. TuP-OD-16Wang, J. TuP-OD-28

Wang, J.F. MoP-CR-30Wang, K. GR8-4Wang, K. OD4-3Wang, K. ThP-OD-7Wang, L. OD12-4Wang, L. OD4-3Wang, L. ThP-GR-34Wang, L. TuP-ED-10Wang, M. GR11-6Wang, M. GR2-5Wang, P. CR12-5Wang, P. CR13-3Wang, P. CR4-6Wang, P. GR16-1Wang, P. TuP-GR-9Wang, R. TuP-CR-24Wang, S. GR5-3Wang, T. CR12-5Wang, T. CR13-2Wang, T. CR13-3Wang, T. CR4-2Wang, T. ED14-1Wang, T. ED8-2Wang, T. GR16-1Wang, T. J1-3Wang, T. OD4-4Wang, T. ThP-CR-2Wang, T. ThP-CR-4Wang, T. TuP-OD-25Wang, T. TuP-OD-5Wang, V. J5-6Wang, W. ED14-5Wang, W. GR10-2Wang, W. ThP-CR-9Wang, X. CR12-5Wang, X. CR13-3Wang, X. CR4-6Wang, X. ED14-1Wang, X. GR16-1Wang, X. MoP-CR-12Wang, X. MoP-ED-22Wang, X. MoP-OD-19Wang, X. TuP-GR-9Wang, X. TuP-OD-24Wang, X.-l. MoP-CR-13Wang, Y. CR12-5Wang, Y. CR16-5Wang, Y. J6-4Wang, Y. MoP-GR-18Wang, Y. MoP-GR-33Wang, Y. MoP-OD-25Wang, Y. TuP-GR-21Wang, Y. TuP-OD-5Wang, Y.-T. TuP-OD-20Washiyama, S. CR5-4Washiyama, S. CR7-7

Washiyama, S. CR8-7Washiyama, S. ED14-2Washiyama, S. GR1-1Washiyama, S. GR1-2Washiyama, S. GR1-3Washiyama, S. GR2-1Wasik, D. CR8-5Wasisto, H. ED10-3Wasisto, H. ED10-5Wasisto, H. ED7-1Wasisto, H. OD11-4Wasisto, H. OD11-7Wasisto, H. OD2-2Wasisto, H. OD7-6Wasisto, H. TuP-OD-12Wasisto, H. TuP-OD-13Wasmer, K. ThP-GR-1Watanabe, H. ED3-2Watanabe, H. OD8-1Watanabe, H. TuP-ED-3Watanabe, H. TuP-ED-4Watanabe, K. ED3-2Watanabe, S. CR9-5Watanabe, T. TuP-GR-20Watanabe, Y. OD10-3Waters, D. CR10-1Weatherley, T.F. CR7-5Wehmann, H.-H. CR15-5Wehmann, H.-H. ED10-3Wehmann, H.-H. J3-2Wehmann, H.-H. J3-4Wei, B. MoP-OD-25Wei, H. MoP-OD-9Wei, K. MoP-ED-22Wei, L.-L. MoP-GR-15Wei, T. MoP-GR-14Wei, T. MoP-OD-18Wei, T. ThP-CR-9Wei, T. TuP-OD-16Weidenbach, A. ThP-ED-25Weisbuch, C. CR1-5Weisbuch, C. CR1-7Weisbuch, C. CR15-4Weisbuch, C. CR9-2Weisbuch, C. OD6-6Weman, H. MoP-OD-35Weman, H. ThP-GR-22Weman, H. ThP-GR-37Wen, H.-C. MoP-GR-28Wen, H.-C. MoP-GR-29Wen, P. MoP-OD-14Wen, P. MoP-OD-29Wen, P. TuP-CR-7Wen, P. TuP-CR-8Wen, P. TuP-CR-9Wernicke, T. CR10-2

DRAFT


Wernicke, T. CR11-4Wernicke, T. CR12-2Wernicke, T. GR13-7Wernicke, T. GR5-6Wernicke, T. GR7-1Wernicke, T. J1-5Wernicke, T. J4-2Wernicke, T. J4-3Wernicke, T. OD14-6Wernicke, T. OD14-7Wernicke, T. OD15-3Wernicke, T. OD16-5Wernicke, T. TuP-OD-4Wetzel, C. GR12-8Weyers, M. CR6-7Weyers, M. CR7-7Weyers, M. GR1-7Weyers, M. GR7-1Weyers, M. J1-5Weyers, M. OD14-4Weyers, M. OD15-4Weyers, M. OD16-5Weyers, M. OD3-3Weyers, M. ThP-OD-28Weyher, J. MoP-CR-28Wieben, J. OD13-2Wieneke, M. CR6-5Wierzbowska, M. MoP-CR-34Wilkinson, A.J. CR10-1Wilson, L. GR11-7Winiarski, M.J. GR6-1Winkelmann, A. CR10-1Winkelmann, A. ThP-CR-4Witte, H. CR6-5Witte, H. J4-7Wittmann, S. OD9-1Witzigmann, B. CR11-4Witzigmann, B. ED10-3Witzigmann, B. ED10-5Wlodarczyk, D. ThP-CR-15Woitok, J.F. MoP-CR-19Wojtasiak, W. TuP-ED-32Wollweber, J. GR5-1Wolny, P. CR1-6Wolny, P. GR14-5Wolny, P. OD1-2Won, C.-H. TuP-ED-19Wong, M.S. OD2-3Woo, K. TuP-OD-30Woo, K.Y. MoP-CR-27Woo, K.-Y. OD12-5Woodward, J. GR16-2Woodward, J. TuP-GR-6Wraback, M. CR12-6Wraback, M. MoP-CR-8Wu, C.-C. OD11-5

Wu, J. OD10-6Wu, M. CR16-6Wu, M. ED12-7Wu, M. MoP-CR-26Wu, M. ThP-ED-13Wu, Q. GR11-2Wu, S. CR8-3Wu, S. ED12-7Wu, S. ThP-ED-38Wu, X. MoP-GR-1Wu, Y. ED15-6Wu, Y. MoP-GR-18Wu, Y.-R. CR1-5Wu, Y.-R. CR1-7Wu, Y.-R. CR9-2Wu, Y.-R. J1-4Wu, Y.-R. OD6-6Wu, Z. MoP-GR-2Wu, Z. MoP-OD-22Wunderer, T. CR12-6Wurm, C. ED11-7Wuu, D. MoP-OD-1Wuu, D.-S. OD11-5Wuu, D.-S. ThP-OD-3

— X —Xia, X. MoP-GR-21Xia, X. MoP-GR-24Xiao, H. MoP-OD-25Xiao, S. CR2-6Xiao, S. CR9-3Xiao, S. ThP-GR-8Xie, L. TuP-GR-9Xie, N. GR11-6Xie, N. GR2-5Xie, Y. ThP-CR-9Xie, Z. MoP-OD-24Xie, Z. ThP-OD-22Xie, Z. ThP-OD-32Xing, H. CR16-3Xing, H. ED13-8Xing, H. ED4-1Xing, H. OD1-3Xing, H. TuP-ED-23Xing, H.G. ED1-3Xing, J. MoP-OD-22Xiong, B. OD12-4Xiong, B. ThP-GR-34Xiu, H. MoP-OD-29Xu, C.-L. ED7-5Xu, C.-L. OD13-5Xu, C.-L. TuP-CR-17Xu, C.-L. TuP-GR-23Xu, C.-L. TuP-GR-37Xu, F. GR11-6Xu, F. GR16-1

Xu, F. GR2-5Xu, H. OD8-4Xu, J. TuP-CR-24Xu, K. GR4-5Xu, K. MoP-CR-12Xu, K. MoP-CR-30Xu, K. ThP-GR-4Xu, K. TuP-GR-3Xu, R. OD8-4Xu, W. ED11-4Xu, W. ED12-8Xu, W. ED13-3Xu, W. ED2-4Xu, W. ThP-ED-15Xu, X. ThP-CR-4Xu, X. ThP-GR-14Xu, Y. TuP-GR-3Xu, Z. MoP-GR-1Xuan, R. MoP-GR-28Xuan, R. MoP-GR-29Xue, J. TuP-GR-16

— Y —Yablonskii, G.P. ThP-GR-17Yacoub, H. GR1-6Yacoub, H. OD13-2Yacoub, H. TuP-ED-24Yadav, Y. ThP-ED-37Yadav, Y.K. MoP-ED-15Yadav, Y.K. ThP-CR-24Yadav, Y.K. ThP-ED-40Yadav, Y.K. TuP-ED-30Yagi, H. GR8-5Yagi, S. TuP-GR-11Yagi, T. TuP-CR-25Yaguchi, H. GR11-4Yaguchi, H. MoP-CR-10Yaguchi, H. TuP-GR-11Yagyu, E. ED9-4Yakovlev, E. ED5-3Yalamarthy, A.S. ED7-2Yamada, H. CR7-3Yamada, H. TuP-ED-4Yamada, H. TuP-OD-24yamada, N. GR10-4Yamada, N. ThP-GR-6Yamada, S. ED2-6Yamada, S. ED3-7Yamada, S. ThP-OD-6Yamada, T. CR4-1Yamada, T. ED2-1Yamada, T. ED3-2Yamada, T. GR4-6Yamada, T. OD6-4Yamada, T. TuP-ED-3Yamada, T. TuP-ED-4

DRAFT


Yamada, T. TuP-OD-24Yamada, Y. CR3-5Yamada, Y. MoP-CR-1Yamada, Y. OD14-3Yamada, Y. TuP-CR-1Yamaga, M. OD4-7Yamagata, Y. GR11-7Yamaguchi, A. GR15-2Yamaguchi, A.A. CR15-2Yamaguchi, M. TuP-ED-34Yamaguchi, R. MoP-ED-13Yamaguchi, T. CR4-3Yamaguchi, T. ThP-OD-12Yamaguchi, T. TuP-ED-12Yamajo, S. TuP-CR-18Yamakawa, T. CR6-1Yamaki, H. MoP-GR-6Yamamoto, A. ED15-5Yamamoto, A. ED5-6Yamamoto, H. J6-7Yamamoto, K. ED1-5Yamamoto, K. OD5-3Yamamoto, K. ThP-GR-12Yamamoto, K. ThP-OD-23Yamamoto, N. CR5-3Yamamoto, N. OD7-3Yamamoto, S. MoP-GR-34Yamamoto, Y. TuP-CR-21Yamamuka, M. ED9-4Yamanaka, M. J4-4Yamane, K. GR6-2Yamanobe, S. ED2-5Yamaoka, K. GR5-3Yamaoka, Y. ThP-GR-20Yamashita, Y. CR4-3Yamashita, Y. MoP-CR-20Yan, B. TuP-OD-5Yan, J. GR11-2Yan, J. MoP-GR-14Yan, J. MoP-OD-18Yan, J. MoP-OD-2Yan, L. TuP-OD-11Yan, Z. ThP-GR-4Yanagita, N. J7-6Yang, A. CR4-3Yang, C. J3-1Yang, C.-C. TuP-OD-20Yang, C.-Y. OD11-5Yang, F. TuP-OD-16Yang, H. ED4-4Yang, H. MoP-ED-2Yang, H. MoP-OD-14Yang, H. MoP-OD-29Yang, H. OD9-2Yang, H. ThP-CR-19Yang, H. TuP-CR-7

Yang, H. TuP-CR-8Yang, H. TuP-CR-9Yang, J. MoP-GR-14Yang, J. TuP-OD-33Yang, K. OD16-6Yang, L. CR16-6Yang, L. ED12-7Yang, L. ED14-1Yang, L. MoP-CR-26Yang, L. ThP-ED-38Yang, L. TuP-ED-20Yang, S. CR16-5Yang, S. ED14-7Yang, S. ED6-5Yang, W. ThP-OD-28Yang, X. CR8-3Yang, X. ED10-4Yang, X. GR10-1Yang, X. GR16-1Yang, X. GR8-6Yang, X. J6-6Yang, X. MoP-OD-25Yang, X. ThP-OD-28Yang, Y. ThP-CR-9Yang, Z. CR12-6Yano, Y. CR3-5Yano, Y. ThP-GR-20Yao, Y. CR5-5Yao, Y.-S. ThP-OD-3Yasue, S. OD16-4Yasue, S. OD16-7Yasue, s. GR5-2Yasunaga, H. OD2-7Yates, L. CR16-4Yates, L. ED9-2Yayama, T. ThP-CR-32Ye, H. ED10-1Ye, J. ED2-4Ye, J. OD11-6Yeo, H.-S. OD12-5Yeo, H.-S. ThP-CR-3Yeo, H.-S. ThP-CR-5Yi, C. ED4-5Yi, W. CR14-3Yi, W. CR2-3Yi, W. ThP-CR-12Yi, X. MoP-GR-33Yi, X. TuP-GR-21Yin, H. TuP-GR-9Yin, J. ThP-GR-30Yin, J. TuP-OD-11Ying, L. OD10-6Ying, L. OD8-4Yoder, P.D. ThP-ED-25Yodo, T. ThP-CR-8Yoganathan, M. GR5-3

Yokoyama, S. TuP-OD-27Yon, V. TuP-GR-10Yoneda, A. CR3-5Yonenaga, I. ThP-CR-29Yoo, S. TuP-OD-23Yoo, Y.-S. MoP-CR-27Yoo, Y.-S. ThP-OD-9Yoon, E. CR15-3Yoon, E. J7-2Yoon, S. MoP-OD-27Yoshida, D. TuP-GR-36Yoshida, G. ThP-CR-8Yoshida, H. GR7-4Yoshida, H. OD15-7Yoshida, H. ThP-CR-26Yoshida, H. ThP-GR-8Yoshida, H. TuP-CR-14Yoshida, K. ED2-5Yoshida, S. ED12-2Yoshida, S. OD8-2Yoshida, T. CR11-1Yoshida, T. CR7-1Yoshida, T. ED1-2Yoshida, T. ED5-2Yoshida, T. GR3-1Yoshida, T. MoP-ED-1Yoshida, T. ThP-ED-7Yoshida, T. TuP-ED-25Yoshida, Y. OD7-3Yoshigoe, A. ThP-CR-17Yoshigoe, A. TuP-ED-12Yoshigoe, A. TuP-ED-3Yoshigoe, A. TuP-ED-4Yoshikado, S. ThP-CR-20Yoshikawa, A. OD3-1Yoshikawa, A. OD3-4Yoshikawa, A. ThP-OD-6Yoshikawa, H. CR4-3Yoshikawa, M. MoP-GR-6Yoshimatsu, K. ThP-GR-33Yoshimura, M. GR15-6Yoshimura, M. GR15-7Yoshimura, M. GR4-4Yoshimura, M. GR4-6Yoshimura, M. ThP-GR-28Yoshioka, A. ED3-6Yoshitsugu, K. ED9-4You, C. TuP-OD-29You, H. ThP-OD-8You, S. ED8-3Young, N.G. OD5-1Yu, C.-Y. GR12-6Yu, F. ED10-3Yu, F. ED10-5Yu, F. OD7-6Yu, G. J1-6

DRAFT


Yu, J. ThP-GR-34Yu, T. GR8-4Yu, T. MoP-OD-34Yu, T. ThP-OD-15Yu, T. TuP-CR-12Yu, T. TuP-GR-38Yu, W. ThP-GR-34Yu, X.-R. ED7-5Yu, X.-R. OD13-5Yu, X.-R. TuP-CR-17Yu, X.-R. TuP-GR-23Yu, X.-R. TuP-GR-37Yu, Y. MoP-GR-38Yu, Y. TuP-OD-11Yuan, C. MoP-CR-16Yuan, C.-T. MoP-GR-28Yuan, C.-T. MoP-GR-29Yuan, S.-H. OD11-5Yuan, S.-H. ThP-OD-3Yuen, S. OD2-6Yuge, K. CR7-4Yulianto, N. ED7-1Yulianto, N. TuP-OD-12Yulianto, N. TuP-OD-13Yun, J. MoP-OD-6Yun, J. OD4-3Yusuf, Y. TuP-GR-39Yusuf, Y.B. MoP-GR-19Yusuf, Y.B. TuP-OD-10

— Z —Zainal, N. TuP-GR-39Zainal, N. TuP-OD-9Zainal, N.B. MoP-GR-19Zajac, M. CR8-5Zajac, M. GR4-3Zajac, M. MoP-CR-6Zak, M. OD1-2Zakusov, M. MoP-OD-7Zakusov, M. TuP-GR-25Zakusov, M. TuP-GR-7Zakutayev, A. CR9-7Zakutayev, A. MoP-GR-31Zanoni, E. ED11-1Zanoni, E. ED15-3Zanoni, E. OD14-5Zdanowicz, E. ThP-GR-36Zdunek, J. ED12-3Zegaoui, M. ED15-3Zegaoui, M. ED4-3Zeghouane, M. J1-1Zeimer, U. OD16-5Zeimer, U. OD3-3Zemlyakov, V. MoP-OD-36Zeng, C. ED13-3Zeng, C. ThP-ED-15

Zeng, J. MoP-GR-20Zeng, X. MoP-CR-12Zervos, C. ThP-GR-13Zhan, J. MoP-OD-34Zhan, J. TuP-CR-12Zhan, J. TuP-GR-38Zhang, B. ED14-7Zhang, B. MoP-GR-38Zhang, B. MoP-OD-22Zhang, B. OD10-6Zhang, B. OD8-4Zhang, B. ThP-ED-18Zhang, C. OD8-3Zhang, D. ThP-ED-15Zhang, F. MoP-OD-14Zhang, F. MoP-OD-29Zhang, F. TuP-CR-7Zhang, F. TuP-CR-8Zhang, F. TuP-CR-9Zhang, G. MoP-OD-34Zhang, G. ThP-OD-28Zhang, G. TuP-CR-12Zhang, G. TuP-GR-38Zhang, H. CR8-3Zhang, H. ED4-5Zhang, H. J1-7Zhang, H. OD2-1Zhang, H. TuP-GR-17Zhang, H. TuP-GR-32Zhang, J. ED14-1Zhang, J. ED7-4Zhang, J. GR10-1Zhang, J. GR8-6Zhang, J. MoP-ED-11Zhang, J. MoP-ED-9Zhang, J. OD8-3Zhang, J. TuP-GR-16Zhang, J.-C. TuP-GR-15Zhang, J.P. MoP-CR-30Zhang, J.-W. ED7-5Zhang, J.-W. OD13-5Zhang, J.-W. TuP-CR-17Zhang, J.-W. TuP-GR-23Zhang, J.-W. TuP-GR-37Zhang, K. ED4-4Zhang, K. TuP-OD-24Zhang, L. ED14-7Zhang, L. GR11-2Zhang, L. GR11-6Zhang, L. MoP-GR-20Zhang, L. MoP-OD-14Zhang, L. MoP-OD-2Zhang, L. MoP-OD-29Zhang, L. OD16-6Zhang, L. TuP-CR-7Zhang, L. TuP-CR-8

Zhang, L. TuP-CR-9Zhang, L. TuP-OD-33Zhang, M. CR16-6Zhang, M. ED12-7Zhang, M. ED4-5Zhang, M. MoP-CR-26Zhang, M. ThP-ED-13Zhang, M. ThP-ED-38Zhang, M. TuP-ED-20Zhang, R. ED11-4Zhang, R. ED12-8Zhang, R. ED13-3Zhang, R. ED2-4Zhang, R. MoP-ED-23Zhang, R. MoP-OD-24Zhang, R. ThP-ED-15Zhang, R. ThP-OD-22Zhang, R. ThP-OD-32Zhang, R. ThP-OD-8Zhang, S. MoP-OD-14Zhang, S. MoP-OD-29Zhang, S. TuP-CR-24Zhang, S. TuP-CR-7Zhang, S. TuP-CR-8Zhang, S. TuP-CR-9Zhang, T. MoP-ED-9Zhang, X. ED5-5Zhang, X. J3-1Zhang, X. MoP-OD-18Zhang, X. OD2-6Zhang, X. OD7-7Zhang, X. TuP-ED-20Zhang, X. TuP-OD-34Zhang, Y. CR12-7Zhang, Y. ED14-7Zhang, Y. MoP-ED-22Zhang, Y. MoP-ED-6Zhang, Y. MoP-ED-9Zhang, Y. MoP-GR-20Zhang, Y. MoP-GR-38Zhang, Y. MoP-OD-25Zhang, Y. OD16-6Zhang, Y. TuP-OD-11Zhang, Y. TuP-OD-33Zhang, Z. GR10-1Zhang, Z. MoP-CR-5Zhang, Z. ThP-GR-14Zhang, Z. ThP-GR-34Zhao, H. MoP-OD-24Zhao, H. MoP-OD-25Zhao, H. ThP-OD-22Zhao, L. OD16-6Zhao, M. ED8-3Zhao, M. GR12-7Zhao, S. J6-4Zhao, Y. MoP-ED-20

DRAFT


Zhao, Z. ED4-5zheng, P. ED4-6Zheng, P. TuP-CR-24Zheng, R. ThP-ED-14Zheng, R. TuP-OD-28Zheng, X. CR4-6Zheng, X. ED11-7Zheng, X. GR16-1Zheng, X. MoP-OD-9Zheng, Y. ED11-4Zheng, Y. ED12-8Zheng, Y. ED13-3Zheng, Y. ED2-4Zheng, Y. MoP-ED-22Zheng, Y. MoP-ED-23Zheng, Y. MoP-OD-24Zheng, Y. ThP-ED-15Zheng, Y. ThP-OD-22Zheng, Y. ThP-OD-8Zheng, Z. CR16-5Zheng, Z. OD10-6Zheng, Z. OD8-4Zhi, T. MoP-OD-24Zhi, T. ThP-OD-22Zhi, T. ThP-OD-32Zhon, Y. MoP-ED-25Zhong, Y. MoP-ED-2Zhong, Y. ThP-ED-36Zhou, D. ED11-4Zhou, D. ED12-8Zhou, D. ED13-3Zhou, D. ED2-4

Zhou, D. ThP-ED-15Zhou, G. TuP-GR-9Zhou, H. J3-2Zhou, H. MoP-ED-11Zhou, H. MoP-ED-9Zhou, J. MoP-ED-23Zhou, J. ThP-ED-1Zhou, L. OD3-7Zhou, Q. TuP-OD-28Zhou, R. MoP-OD-29Zhou, R. OD9-2Zhou, R. TuP-CR-7Zhou, R. TuP-CR-8Zhou, R. TuP-CR-9Zhou, S. MoP-OD-8Zhou, X. ED1-6Zhou, X. ED12-7Zhou, X. TuP-ED-20Zhou, Y. ED4-4Zhou, Y. MoP-ED-2Zhou, Y. OD9-2Zhu, J. ED12-7Zhu, J. MoP-OD-19Zhu, J. ThP-ED-11Zhu, J. TuP-ED-20Zhu, Q. CR16-6Zhu, Q. ED12-7Zhu, Q. ThP-ED-11Zhu, Q. ThP-ED-13Zhu, Q. TuP-ED-20Zhu, R. ED12-4Zhu, T. CR13-2

Zhu, T. CR13-5Zhu, T. J1-3Zhu, T. OD11-1Zhu, T. OD4-4Zhu, T. ThP-CR-25Zhu, T. TuP-OD-25Zhu, W. GR8-2Zhu, W. MoP-OD-30Zhu, Y. ThP-CR-19Zhuravlev, K.S. MoP-CR-4Zielinski, M.S. CR7-5Zíková, M. ThP-GR-15Zimmermann, F. GR1-7Zlotnik, S. MoP-CR-6Zolud, S. OD4-2Zong, H. J1-6Zong, H. ThP-CR-9Zou, X. MoP-ED-6Zou, X. OD2-6Zubialevich, V.Z. J4-1Zubrilov, A. ThP-OD-33Zubrilov, A. TuP-GR-1Zuniga Perez, J. GR13-5Zuniga-Perez, J. CR6-2Zuniga-Pérez, J. J1-5Zuniga-Perez, J. MoP-CR-15Zweipfennig, T. TuP-ED-24Zytkiewicz, Z.R. CR12-3Zytkiewicz, Z.R. J3-5Zytkiewicz, Z.R. ThP-GR-35

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