ACT® 930 - Versum Materials€¦ · INSTRUCTIONS FOR USE ACT 930 65°C to 75°C 5 to 30 minutes DI...

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ACT ® 930 etch residue remover and posive photoresist is a low- hydroxylamine (HA) based product for aluminum applicaons. It is low cost and extremely effecve in removing etch residue. It is well adopted in the worldwide semiconductor industry. ACT® 930 ––– ETCH RESIDUE REMOVER AND POSITIVE PHOTORESIST BENEFITS Rapid removal of stubborn via and metal etch residue, parcularly those with high inorganic content Operang condions; temperatures of 65°C to 75°C for 5 to 30 minutes Completely water soluble aſter stripping; no intermediate rinse necessary Low etch rates on most sensive metals, including Al, Ti, W Removal of bulk photoresist Low trace metal content TYPICAL PHYSICAL PROPERTIES Specific Gravity @ 25°C: 1.055 Boiling Point (for product): 114°C Flash Point (COC): > 100°C Viscosity @ 25°C: 14.2 cSt pH (5% soluon): 11.09 Freezing Point: < -20°C MATERIAL COMPATIBILITY This product is compable with the following materials used in the semiconductor industry*: 316LEP Stainless Steel High Density Polyethylene Polypropylene Kalrez 6375 UP PFA Polysulfone POE e-ring UHMW Polyethylene Teflon PTFE Polyethylene-CL * Test condions: 10 days at 25°C and 75°C For informaon on other materials, contact your Versum Materials ACT sales representave.

Transcript of ACT® 930 - Versum Materials€¦ · INSTRUCTIONS FOR USE ACT 930 65°C to 75°C 5 to 30 minutes DI...

Page 1: ACT® 930 - Versum Materials€¦ · INSTRUCTIONS FOR USE ACT 930 65°C to 75°C 5 to 30 minutes DI water rinse ambient 5 minutes Dry Immediate rinse ambient 5 minutes DI water rinse

ACT® 930 etch residue remover and positive photoresist is a low-hydroxylamine (HA) based product for aluminum applications. It is low cost and extremely effective in removing etch residue. It is well adopted in the worldwide semiconductor industry.

ACT® 930 ––– ETCH RESIDUE REMOVER AND POSITIVE PHOTORESIST

BENEFITS

Rapid removal of stubborn via and metal etch residue, particularly those with high inorganic content

Operating conditions; temperatures of 65°C to 75°C for 5 to 30 minutes

Completely water soluble after stripping; no intermediate rinse necessary

Low etch rates on most sensitive metals, including Al, Ti, W

Removal of bulk photoresist

Low trace metal content

TYPICAL PHYSICAL PROPERTIES

Specific Gravity @ 25°C: 1.055

Boiling Point (for product): 114°C

Flash Point (COC): > 100°C

Viscosity @ 25°C: 14.2 cSt

pH (5% solution): 11.09

Freezing Point: < -20°C

MATERIAL COMPATIBILITY This product is compatible with the following materials used in the semiconductor industry*: 316LEP Stainless Steel High Density Polyethylene

Polypropylene Kalrez 6375 UP

PFA Polysulfone

POE e-ring UHMW Polyethylene

Teflon PTFE Polyethylene-CL

* Test conditions: 10 days at 25°C and 75°C For information on other materials, contact your Versum Materials ACT sales representative.

Page 2: ACT® 930 - Versum Materials€¦ · INSTRUCTIONS FOR USE ACT 930 65°C to 75°C 5 to 30 minutes DI water rinse ambient 5 minutes Dry Immediate rinse ambient 5 minutes DI water rinse

INSTRUCTIONS FOR USE

ACT 930

65°C to 75°C

5 to 30 minutes

DI water rinse

ambient

5 minutes

Dry

Immediate rinse

ambient

5 minutes

DI water rinse

ambient,

5 minutes

either

or

ETCH RATES Etch rates on the following substrates**: TYPICAL MATERIALS ETCH RATES (Å/MIN) @ 75°C

Al 7

SiN < 1

TEOS < 1

Ti 2

W 2

TiN 1

**Metal thickness measurements were taken with a CDE ResMap 273 four-point probe. ***PolySi etch rate is bath life dependent.

TYPICAL PERFORMANCE RESULTS

BEFORE STRIP AFTER STRIP

TEOS VIA TO AL/CU APPLICATIONS

Process conditions: 75°C, 10 minutes

BEFORE STRIP AFTER STRIP

Process conditions: 75°C, 20 minutes

Page 3: ACT® 930 - Versum Materials€¦ · INSTRUCTIONS FOR USE ACT 930 65°C to 75°C 5 to 30 minutes DI water rinse ambient 5 minutes Dry Immediate rinse ambient 5 minutes DI water rinse

The information contained herein is offered without charge for use by technically qualified personnel at their discretion and risk. All statements, technical information and recommendations contained herein are based on tests and data which we believe to be reliable, but the accuracy or completeness thereof is not guaranteed and no warranty of any kind is made with respect thereto.

325-15-022-GLOBAL-May17

For more information, please contact us at:

VERSUM MATERIALS, LLC

VERSUMMATERIALS.COM

Versum and the Versum Materials logo are trademarks of Versum Materials, Inc. © 2017 Versum Materials, Inc.

Kalrez is a registered trademark of DuPont Dow Elastomers Teflon is a registered trademark of E.I. DuPont de Nemours & Co.

TYPICAL PERFORMANCE RESULTS

BEFORE STRIP AFTER STRIP

TIN/AL:CU/TI METAL LINE APPLICATION

Process conditions: 75°C, 30 minutes

BEFORE STRIP AFTER STRIP