A. Rivetti – INFN Sezione di Torino Lecture II Lecture II: Linear circuit theory review Amplifier...

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A. Rivetti – INFN Sezione di Torino Lecture II Lecture II: Linear circuit theory review Amplifier basics MOS small signal model

Transcript of A. Rivetti – INFN Sezione di Torino Lecture II Lecture II: Linear circuit theory review Amplifier...

A. Rivetti – INFN Sezione di Torino

Lecture II

Lecture II:

• Linear circuit theory review• Amplifier basics• MOS small signal model

A. Rivetti – INFN Sezione di Torino

Nodal analysis

Is VsR1

R2

R3

R4

Nodal analysis provides a systematic and reliable method to calculateall voltages and currents in a linear circuit

Nodal analysis

A. Rivetti – INFN Sezione di Torino

Writing nodal equations

R2 R4

Is VsR1 R3

v1 v2

0

0

4

2

3

2

2

12

2

21

1

1

RVv

Rv

Rvv

Rvv

RvI

s

s

Nodal analysis

A. Rivetti – INFN Sezione di Torino

Writing the circuit matrix

Is VsR1

R2

R3

R4v1 v2

RV

I

v

v

RRRR

RRRs

s

42

1

4322

221

1111

111

Nodal analysis

A. Rivetti – INFN Sezione di Torino

Solving the circuit matrix

RRRR

RRR

4322

221

1111

111

RRRRV

RI

s

s

4324

2

1 111

1

RV

R

IRRs

s

42

21

2 1

11

1

1v 2

2v

Nodal analysis

A. Rivetti – INFN Sezione di Torino

Another example

Is

Vs

R1

R2

R3R4

Nodal analysis

A. Rivetti – INFN Sezione di Torino

Lecture II

Lecture II:

• Linear circuit theory review• Amplifier basics• MOS small signal model

A. Rivetti – INFN Sezione di Torino

Amplifier characteristic

)()()()( ...2

210 txatxatxaaty n

n

The input-output characteristic of an amplifier is usually a non-linearfunction Over some interval of the input signal, this function can be approximated by a polynomial:

For narrow range of the input signal, we may write:

)()(10

txaaty

The above expression does not obey the superposition principle

Amplifier basics

A. Rivetti – INFN Sezione di Torino

Small signal model

If a0 does not depend on the signal, we can write:

)()(1

txaty

This is an expression that obeys the superposition principle

The small signal model takes into account only variations of signalswithin a circuit The small signal equivalent circuit can be studied with the methodsof linear circuit analysis

Amplifier basics

A. Rivetti – INFN Sezione di Torino

Voltage amplifier

Vs(t) Ri

Rs

VoutVi(t)

AV = Vout/Vi Input impedance high (ideally infinite) Output impedance small (ideally zero)

Amplifier basics

A. Rivetti – INFN Sezione di Torino

VA small signal model

AVViVoutVs(t) RI

RS

Vi(t)

RO

RL

Note: impedances may also be complex

Amplifier basics

A. Rivetti – INFN Sezione di Torino

Current amplifier

AV = Iout/Ii Input impedance small (ideally zero) Output impedance high (ideally infinite)

RiRs IoutIi(t)Is(t)

Amplifier basics

A. Rivetti – INFN Sezione di Torino

CA small signal model

Note: impedances may also be complex

Amplifier basics

RiRs Ii(t)Is(t) RLIout(t)RoIs(t)

A. Rivetti – INFN Sezione di Torino

Transconductance amplifier

Vs(t) Ri

Rs

IoutVi(t)

AV = Iout/Vi Input impedance high (ideally infinite) Output impedance high (ideally infinite) Important: the gain is not a number

Amplifier basics

A. Rivetti – INFN Sezione di Torino

TCA small signal model

Note: impedances may also be complex

Amplifier basics

Vs(t) RI

RS

Vi(t) RLIout(t)RoIs(t)

A. Rivetti – INFN Sezione di Torino

Transimpedance amplifier

AV = Vout/Ii Input impedance small (ideally zero) Output impedance small (ideally zero) Note: Gain is not a number

Amplifier basics

RiRs VoutIi(t)Is(t)

A. Rivetti – INFN Sezione di Torino

TA small signal model

Note: impedances may also be complex

RiRs Ii(t)Is(t) AVViVout

RO

RL

Amplifier basics

A. Rivetti – INFN Sezione di Torino

Lecture II

Lecture II:

• Linear circuit theory review• Amplifier basics• MOS small signal model

A. Rivetti – INFN Sezione di Torino

Simplified small signal DC model

RS

gm VGS

IDS= = n COX

W

L(VGS – VTH) 2 n COX

WL

IDS=

The MOS transistor in saturation can be seen as a voltage controlledcurrent source

Vs(t) Vs(t) gmVs

MOS small signal DC model

A. Rivetti – INFN Sezione di Torino

Practical example

What is the equivalent small signal model of this?

W=100 mL=10 mnCOX=190 A/V2

VTH=0.6 VVdrain=2.5 VVgate=1.25 V

MOS small signal DC model

Vgate

Vdrain

Vs

A. Rivetti – INFN Sezione di Torino

Gm simulation(1)

MOS small signal DC model

Vs=1mV pk-pk

355.7

356.7

0 1 2time (S)

curr

ent (

A)

A. Rivetti – INFN Sezione di Torino

Gm simulation (2)

MOS small signal DC model

Vs=250mV pk-pk

355

660

curr

ent (

A)

0 1 2time (S)

A. Rivetti – INFN Sezione di Torino

Output impedance

MOS small signal DC model

Vgate

Vdrain

Vs

r0

A. Rivetti – INFN Sezione di Torino

Including the output impedance

RS

gm VGS

IDS= = n COX

W

L(VGS – VTH) 2 n COX

WL

IDS=

ro1

IDS

=

The MOS transistor in saturation can be seen as a voltage controlledcurrent source with finite output impedance

Vs(t) Vs(t) rogmVs

MOS small signal DC model

A. Rivetti – INFN Sezione di Torino

Bulk transconductance

gmb VBS

IDS= = n COX

W

L(VGS – VTH)

VSB

VTH

=gm

2F + VSB

MOS small signal DC model

RS

Vs(t) Vs(t) rogmVs gmbvbs

For a more accurate model, the bulk effect must also be taken into account

A. Rivetti – INFN Sezione di Torino

Small signal DC model

The saturated MOS transistor is a voltage controlled current source with finite output impedance

RS

Vs(t) Vs(t) rogmVs gmbvbs

gm models the gate transconductancegmb models the bulk transconductance (the bulk effect)

MOS small signal DC model

A. Rivetti – INFN Sezione di Torino

Some numbers…

gm VGS

IDS= = 2 n COX

WL

IDSro

1

IDS

=

IDS = 100A, W/L=50, nCOX=190A/V2

=0.01V-1

gm = 1mSro = 1M

MOS small signal DC model