A 90-nm Wideband Merged CMOS LNA and Mixer Exploiting Noise Cancellation

Final Project in RFCS in the MINT Program of the UPC by Sven Günther

RFCS - MINT Program

Scope1. Introduction2. Wideband LNA3. LNA Core and Noise Analysis4. Final LNA Topology5. Merged LNA and Mixer6. Measurement and Simulation Results7. Conclusion

RFCS - MINT Program

1. Introduction Why do we need wideband RF

receivers? Many number of wireless LAN standards

in different frequency bands Use for Software Defined Radio (SDR)

with single flexible receiver Less power consumption and chip area

RFCS - MINT Program

2. Wideband LNA Topologies

Resistive feedback LNA Distributed amplifier LNA Inductive source-degeneration common-

source LNA (resistive feed back/LC-bandpass at the input)

Common-gate LNA Noise Figure: F = 1 + γ/α

RFCS - MINT Program

3. LNA Core and Noise Analysis Cascode structure Input impedance

1 3

2in

m m

Rg g

RFCS - MINT Program

3. LNA Core and Noise Analysis

1 3

12in

sm m

RRg g

2 4ns sv KTR2 4n

m

KTvg

Noise Analysis Assumption that

Thermal Noise is Main Noise Source

Input Power Matching Condition:

RFCS - MINT Program

3. LNA Core and Noise Analysis Noise Analysis

Noise Factor

Optimum Noise Factor for For Rin=100 Ω, Rs=50 Ω, gm1=28.28 mS,

gm3=8.28

21

11

( 2)1 1m sm s

m s

g RF g R

g R

1( ) 2m s optg R

1 0.657F

1F

RFCS - MINT Program

4. Final LNA Topology M3 and M4 pMOS

due to less Vth M5 to M8

inductively degenerated for Output Current Noise Reduction

RFCS - MINT Program

5. Merged LNA and Mixer Less transistors in

signal path Lower non-

linearities Less power

consumption

RFCS - MINT Program

5. Merged LNA and Mixer Final Noise Factor

For the design with I=0.7 mA, RL=350 Ω, A=0.25 mV (amplitude of single-ended LO signal)

21

12 21 1 1

( 2)8 1 161 1m sm s

m s L m s m s

g RIF g Rg R R g R A g R

1.57 1.014F

RFCS - MINT Program

6. Measurement and Simulation Results

RFCS - MINT Program

7. Conclusion Merged LNA and

Mixer realized in 90 nm CMOS

Compact Size Low Power

Consumption Suitable for

multiband operation

Power Gain 12.1 dB

Voltage Gain 20 dB

RF Frequency 0.1 ~ 3.85 GHz

IF Freqeuncy 70 MHz

NFSSB,min 8.4 dB (fRF=2.1 GHz)

NFSSB,max 11.5 dB (fRF=0.1, 3.85 GHz)

S11 < -10 dB

1dB CP (Input Ref.) -12.83 dBm (fRF=2.3 GHz)

IDD at VDD (Core) 8.15 mA at 1.2 V

Area 0.88 mm2

Technology 90 nm CMOS

RFCS - MINT Program

Thank you for your Attention!

Any Questions?

RFCS - MINT Program

Bibliography [1] A. Amer, E. Hegazi, and H. F. Ragaie, “A 90-nm

Wideband Merged CMOS LNA and Mixer Exploiting Noise Cancellation,” IEEE J. Solid-State Circuits, vol. 42, no. 2, pp. 323-328, Feb 2007.

[2] H. Sjöland, A. Sanjaani, and A. Abidi, “A merged CMOS LNA and mixer for a WCDMA receiver,” IEEE J. Solid- State Circuits, vol. 38, no. 6, pp. 1045–1050, Jun 2003.

[3] H. Darabi and A. Abidi, “Noise in RF-CMOS mixers: A simple physical model,” IEEE J. Solid-State Circuits, vol. 35, no. 1, pp. 15–25, Jan. 2000.

[4] M. Kawashima, H. Hayashi, T. Nakagawa, K. Nishikawa, and K. Araki, “A 0.9-2.6 GHz broadband RF front-end for direct conversion transceivers,” in IEEE MTT-S 2002 Int. Microwave Symp. Dig., pp. 927–930.

[5] V. J. Arkesteijn, E. A. M. Klumperink, and B. Nauta, “A wideband high-linearity RF receiver front-end in CMOS,” in Proc. ESSCIRC, 2004, pp. 71–74.