A 90-nm Wideband Merged CMOS LNA and Mixer Exploiting Noise Cancellation Final Project in RFCS in...
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Transcript of A 90-nm Wideband Merged CMOS LNA and Mixer Exploiting Noise Cancellation Final Project in RFCS in...
A 90-nm Wideband Merged CMOS LNA and Mixer Exploiting Noise Cancellation
Final Project in RFCS in the MINT Program of the UPC by Sven Günther
RFCS - MINT Program
Scope
1. Introduction2. Wideband LNA3. LNA Core and Noise Analysis4. Final LNA Topology5. Merged LNA and Mixer6. Measurement and Simulation Results7. Conclusion
RFCS - MINT Program
1. Introduction
Why do we need wideband RF receivers? Many number of wireless LAN standards
in different frequency bands Use for Software Defined Radio (SDR)
with single flexible receiver Less power consumption and chip area
RFCS - MINT Program
2. Wideband LNA
Topologies Resistive feedback LNA Distributed amplifier LNA Inductive source-degeneration common-
source LNA (resistive feed back/LC-bandpass at the input)
Common-gate LNA Noise Figure: F = 1 + γ/α
RFCS - MINT Program
3. LNA Core and Noise Analysis Cascode structure Input impedance
1 3
2in
m m
Rg g
RFCS - MINT Program
3. LNA Core and Noise Analysis
1 3
1
2in
sm m
RR
g g
2 4ns sv KTR2 4n
m
KTv
g
Noise Analysis Assumption that
Thermal Noise is Main Noise Source
Input Power Matching Condition:
RFCS - MINT Program
3. LNA Core and Noise Analysis
Noise Analysis Noise Factor
Optimum Noise Factor for For Rin=100 Ω, Rs=50 Ω, gm1=28.28 mS,
gm3=8.28
21
11
( 2)1 1m s
m sm s
g RF g R
g R
1( ) 2m s optg R
1 0.657F
1F
RFCS - MINT Program
4. Final LNA Topology M3 and M4 pMOS
due to less Vth
M5 to M8 inductively degenerated for Output Current Noise Reduction
RFCS - MINT Program
5. Merged LNA and Mixer
Less transistors in signal path Lower non-
linearities Less power
consumption
RFCS - MINT Program
5. Merged LNA and Mixer
Final Noise Factor
For the design with I=0.7 mA, RL=350 Ω, A=0.25 mV (amplitude of single-ended LO signal)
21
12 21 1 1
( 2)8 1 161 1m s
m sm s L m s m s
g RIF g R
g R R g R A g R
1.57 1.014F
RFCS - MINT Program
7. Conclusion Merged LNA and
Mixer realized in 90 nm CMOS
Compact Size Low Power
Consumption Suitable for
multiband operation
Power Gain 12.1 dB
Voltage Gain 20 dB
RF Frequency 0.1 ~ 3.85 GHz
IF Freqeuncy 70 MHz
NFSSB,min 8.4 dB (fRF=2.1 GHz)
NFSSB,max 11.5 dB (fRF=0.1, 3.85 GHz)
S11 < -10 dB
1dB CP (Input Ref.) -12.83 dBm (fRF=2.3 GHz)
IDD at VDD (Core) 8.15 mA at 1.2 V
Area 0.88 mm2
Technology 90 nm CMOS
RFCS - MINT Program
Bibliography [1] A. Amer, E. Hegazi, and H. F. Ragaie, “A 90-nm
Wideband Merged CMOS LNA and Mixer Exploiting Noise Cancellation,” IEEE J. Solid-State Circuits, vol. 42, no. 2, pp. 323-328, Feb 2007.
[2] H. Sjöland, A. Sanjaani, and A. Abidi, “A merged CMOS LNA and mixer for a WCDMA receiver,” IEEE J. Solid- State Circuits, vol. 38, no. 6, pp. 1045–1050, Jun 2003.
[3] H. Darabi and A. Abidi, “Noise in RF-CMOS mixers: A simple physical model,” IEEE J. Solid-State Circuits, vol. 35, no. 1, pp. 15–25, Jan. 2000.
[4] M. Kawashima, H. Hayashi, T. Nakagawa, K. Nishikawa, and K. Araki, “A 0.9-2.6 GHz broadband RF front-end for direct conversion transceivers,” in IEEE MTT-S 2002 Int. Microwave Symp. Dig., pp. 927–930.
[5] V. J. Arkesteijn, E. A. M. Klumperink, and B. Nauta, “A wideband high-linearity RF receiver front-end in CMOS,” in Proc. ESSCIRC, 2004, pp. 71–74.