6th semi-insulating materials conference
1
FE A TU R E A one-day educational workshop on Sunday 13th May attracted 61 attendees for a series of lectures on different aspects of "Characterisation of Semi-Insulating III- V Materials'. This workshop was the first of its kind in this conference series, and was very successfully organised by David Look (Wright State University, Ohio) with the help of S expert speakers from the field. A set of the presented workshop materials was distributed to the work- shop attendees, and further copies are available from the organisers. The technical pro- gramme of the conference involved the presentation of 68 contributed papers (selected from a total of 1 I9 submitted abstracts) and 8 invited papers given by acknowledged experts in various aspects of the field of semi-insulating III-V materials. Manuscripts of the papers presented are published by the UK Institute of Physics Publishing division in a volume appearing at the end of 1990 (Editors A.G. Milnes and C.J. Miner). The content of the published papers was also reviewed by members of the technical programme committee and session chairmen. The titles of the 8 invited papers, and their presenters were as follows: 1 "Increased Yield of Microwave Devices Due to Subsurface Damage Reduction in SI GaAs Wafers" Curt Shannon, (Johnson Matthey Electronics, USA), 2 "Gallium Arsenide Substrates: Issues for VLSI" Linton Salmon, (Rockwell International, Newbury Park, CA), 3 "Precipitates and the Performance of GaAs Analogue and Digital ICs" Sylvie Martin, (Phillips Microwave GaAs Foundry, (Limeil-Br_vannes, France), 4 "Whole Wafer Assessment of Si GaAs" John S. Blakemore, (Western Washington University, Bellingham, WA), 6th Semi-Insulating Materials Conference May 13-16th, 1990, Toronto, Canada The sixth international conference on "Semi- Insulating III-V Materials" was held in Toronto, Canada from 13th-16th May 1990. A total of 161 participants was registered at the conference, of which 45% were from the USA, 15% from Canada, 10% from Japan. The balance of the attendance covered 13 other countries including Europe, China, Korea and Mexico. IIII $ "Recent Developments in Bulk lnP Growth" Osamu Oda, (Nippon Mining Co. Ltd, Saitama, Japan), 6 "Review of Progress in Bulk SI IH-V Co,stal Growth and Related Materials Technology in Japan" T. Fukuda, (Inst. for Materials Research, Tohoku University, Sendal, Japan), 7 "Hydrogen Passivation: Relevance tbr S1 HI-V Materials" A.Y. l'olyakov, (Inst. of Rare Metals, Moscow, USSR), 8 "Insulating Layers for Device Isolation in III-V Semiconductor ICs" R. Calawa, (MIT Lincoln Laboratory, Lexington, MA). Contributed papers at the 6th SIMC continue to embrace many of the areas discussed in previous meet- ings, with an increased focus towards the influence of the semi-insulating materials on device and cir- cuit-related applications. A major topic of discussion was the subject of back-gat- ing effects, and why low- temperature grown MBE layers seem to reduce or eliminate this problem area. The influence of industrialisation of GaAs technology was apparent in papers discussing 100mm GaAs substrates, and a pre- sentation on the derivation of ASTM standards for GaAs wafers. Compared to previous SIMC programmes, lnP enjoyed increased represen- tation (approx. 25% of the papers at SIMC-6 as com- pared to 12% at SIMC-5) and the epitaxial growth of high resistivity layers on lnP or other III-V combina- tions is clearly of interest for potential use in opto- electronic integration. Understanding of the mechanisms that control impurity incorporation (especially for carbon) in bulk grown III-V materials, and dopant redistribution from epitaxial layers grown on semi-insulating wafers was also advanced by the research of a number of groups. Particularly novel papers presented the growth of ternary ingots (GalnAs) with the associated difficul- ty of composition control, and the characterisation of semi-insulating GaAs by means of non-linear optical mteractions. .X number of characterisa- tion papers addressed map- ping techniques based on optical absorption, and optical or microwave reflectometry, and these approaches are gathering increasing support among process characterisation groups. The evening panel ses- sion on "Stoichiometry" (chaired by Dr. Howard Lessoff, NRL) resonated with some of the contribut- ed papers in pursuing a clearer understanding of the defect chemistry of the III-V materials through the detailed balance and inter- change of the III-V compo- nents and antisites. The subject of In-doped GaAs, very popular 4 years ago at the Hakone (Japan) SIMC, was noticeably less popular, and the disloca- tion densities seem to be more widely controlled by other techniques such as management of thermal gradients during the ingot growth. An exhibition of materi- als and equipment was held adjacent to the confer- ence, and involved a fur- ther 30 people not neces- sarily registered at the con- ference, providing for use- ful interchanges between the exhibih)rs and confer- ence delegate~. I)uring the course of the Foronto conference, a meeting of the SIM(; International Advisory ( x)rnmittec was held t}~ review the participation at this conference, and its role in the world-wide commu- nity. It was decided that this particular assembly of specialists provides a unique forum for the exchange ot ideas and results within a field that is still very much in need of improved communication. Especially at a time when GaAs devices are moving iIlto real commercial exploitation and facing challenges relating to man- ufacturabilitv, this confer- ence has a special interest in helping to resolve some of those challenges. At the same time, the optoelec- tronics industrv is placing even more sopflisticated demands on the develop- ing InP-based technologies. In this context the IAC agreed that there is sub- stantial motivation for the holding of a 7th SIMC, and the task for organising that meeting was accepted by Bill Ford of t tarris Microwave in California. Dr. Ford plans to hold SIMC-7 in early May 1992 at a location in Mexico, with the cooperation of Dr. Jaime Mimila-Arroyo (from Mexico) who has been involved in the last two conferences of SIMC. • l'md ]a); MMc-6 (.oWeren~e Chairman, Bell-NorfllernResearch. P.tL Box 35 l 1, Station "¢.'" ()ttdWa, ()~lh~lio.K1Y 4H7 (~anadtl
Transcript of 6th semi-insulating materials conference
F E A T U R E
A one-day educational workshop on Sunday 13th May attracted
61 attendees for a series of lectures on different aspects of "Characterisation of Semi-Insulating III- V Materials'. This workshop was the first of its kind in this conference series, and was very successfully organised by David Look (Wright State University, Ohio) with the help of S expert speakers from the field. A set of the presented workshop materials was distributed to the work- shop attendees, and further copies are available from the organisers.
The technical pro- gramme of the conference involved the presentation of 68 contributed papers (selected from a total of 1 I9 submitted abstracts) and 8 invited papers given by acknowledged experts in various aspects of the field of semi-insulating III-V materials. Manuscripts of the papers presented are published by the UK Institute of Physics Publishing division in a volume appearing at the end of 1990 (Editors A.G. Milnes and C.J. Miner). The content of the published papers was also reviewed by members of the technical programme committee and session chairmen.
The titles of the 8 invited papers, and their presenters were as follows:
1 "Increased Yield of Microwave Devices Due to Subsurface Damage Reduction in SI GaAs Wafers" Curt Shannon, (Johnson Matthey Electronics, USA),
2 "Gallium Arsenide Substrates: Issues for VLSI" Linton Salmon, (Rockwell International, Newbury Park, CA),
3 "Precipitates and the Performance of GaAs Analogue and Digital ICs" Sylvie Martin, (Phillips Microwave GaAs Foundry, (Limeil-Br_vannes, France),
4 "Whole Wafer Assessment of Si GaAs" John S. Blakemore, (Western Washington University, Bellingham, WA),
6th Semi-Insulating Materials Conference
May 13-16th, 1990, Toronto, Canada
The sixth international conference on "Semi- Insulating III-V Materials" was held in Toronto, Canada from 13th-16th May 1990. A total of 161 participants was registered at the conference, of which 45% were f rom the USA, 15% from Canada, 10% from Japan. The balance of the attendance covered 13 other countries including Europe, China, Korea and Mexico.
IIII
$ "Recent Developments in Bulk lnP Growth" Osamu Oda, (Nippon Mining Co. Ltd, Saitama, Japan),
6 "Review of Progress in Bulk SI IH-V Co,stal Growth and Related Materials Technology in Japan" T. Fukuda, (Inst. for Materials Research, Tohoku University, Sendal, Japan),
7 "Hydrogen Passivation: Relevance tbr S1 HI-V Materials" A.Y. l'olyakov, (Inst. of Rare Metals, Moscow, USSR),
8 "Insulating Layers for Device Isolation in III-V Semiconductor ICs" R. Calawa, (MIT Lincoln Laboratory, Lexington, MA).
Contributed papers at the 6th SIMC continue to embrace many of the areas discussed in previous meet- ings, with an increased focus towards the influence of the semi-insulating materials on device and cir- cuit-related applications. A major topic of discussion was the subject of back-gat- ing effects, and why low- temperature grown MBE layers seem to reduce or eliminate this problem area. The influence of industrialisation of GaAs technology was apparent in papers discussing 100mm GaAs substrates, and a pre- sentation on the derivation of ASTM standards for GaAs wafers.
Compared to previous SIMC programmes, lnP enjoyed increased represen- tation (approx. 25% of the papers at SIMC-6 as com- pared to 12% at SIMC-5) and the epitaxial growth of
high resistivity layers on lnP or other III-V combina- tions is clearly of interest for potential use in opto- electronic integration.
Understanding of the mechanisms that control impurity incorporation (especially for carbon) in bulk grown III-V materials, and dopant redistribution from epitaxial layers grown on semi-insulating wafers was also advanced by the research of a number of groups.
Particularly novel papers presented the growth of ternary ingots (GalnAs) with the associated difficul- ty of composition control, and the characterisation of semi-insulating GaAs by means of non-linear optical mteractions.
.X number of characterisa- tion papers addressed map- ping techniques based on optical absorption, and optical or microwave reflectometry, and these approaches are gathering increasing support among process characterisation groups.
The evening panel ses- sion on "Stoichiometry" (chaired by Dr. Howard Lessoff, NRL) resonated with some of the contribut- ed papers in pursuing a clearer understanding of the defect chemistry of the III-V materials through the detailed balance and inter- change of the III-V compo- nents and antisites.
The subject of In-doped GaAs, very popular 4 years ago at the Hakone (Japan) SIMC, was noticeably less
popular, and the disloca- tion densities seem to be more widely controlled by other techniques such as management of thermal gradients during the ingot growth.
An exhibition of materi- als and equipment was held adjacent to the confer- ence, and involved a fur- ther 30 people not neces- sarily registered at the con- ference, providing for use- ful interchanges between the exhibih)rs and confer- ence delegate~.
I)uring the course of the Foronto conference, a meeting of the SIM(; International Advisory ( x)rnmittec was held t}~ review the participation at this conference, and its role in the world-wide commu- nity. It was decided that this particular assembly of specialists provides a unique forum for the exchange ot ideas and results within a field that is still very much in need of improved communication. Especially at a time when GaAs devices are moving iIlto real commercial exploitation and facing challenges relating to man- ufacturabilitv, this confer- ence has a special interest in helping to resolve some of those challenges. At the same time, the optoelec- tronics industrv is placing even more sopflisticated demands on the develop- ing InP-based technologies.
In this context the IAC agreed that there is sub- stantial motivation for the holding of a 7th SIMC, and the task for organising that meeting was accepted by Bill Ford of t tarris Microwave in California. Dr. Ford plans to hold SIMC-7 in early May 1992 at a location in Mexico, with the cooperation of Dr. Jaime Mimila-Arroyo (from Mexico) who has been involved in the last two conferences of SIMC. •
l'md ]a); MMc-6 (.oWeren~e Chairman, Bell-Norfllern Research.
P.tL Box 35 l 1, Station "¢.'" ()ttdWa, ()~lh~lio. K1Y 4H7 (~anadtl
