Data Sheet, Doc. No. 5SYA 1458-03 May 20

5SNG 0450X330300LinPak phase leg IGBT module

VCE = 3300 VIC = 2 x 450 A

Ultra low inductance phase-leg moduleCompact design with very high current densityParalleling without deratingAlSiC base-plate for high power cycling capabilityAlN substrate for low thermal resistanceLow-loss, fast and rugged SPT+ chip-set

Maximum rated values 1)

Parameter Symbol Conditions min max Unit

Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 3300 V

DC collector current IC TC = 105 °C, Tvj = 150 °C 450 A

Peak collector current ICM tp = 1 ms 900 A

Gate-emitter voltage VGES -20 20 V

Total power dissipation Ptot TC = 25 °C, Tvj = 150 °C 4000 W

DC forward current IF 450 A

Peak forward current IFRM tp = 1 ms 900 A

Surge current IFSMVR = 0 V, Tvj = 150 °C,tp = 10 ms, half-sinewave 4000 A

IGBT short circuit SOA tpscVCC = 2500 V, VCEM CHIP £ 3300 VVGE £ 15 V, Tvj start £ 150 °C

10 µs

Isolation voltage Visol 1 min, f = 50 Hz 6000 V

Junction temperature Tvj 175 °C

Junction operating temperature Tvj(op) -40 150 °C

Case temperature TC -40 150 °C

Storage temperature Tstg -40 125 °C

Mounting torques 2)

Ms Base-heatsink, M6 screws 4 6

NmMt1 Main terminals, M8 screws 8 10

Mt2 Auxiliary terminals, M3 screws 0.9 1.1

1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 607472) For detailed mounting instructions refer to ABB Document No. 5SYA 2039

2 5SNG 0450X330300 | Doc. No. 5SYA 1458-03 05-2020

IGBT characteristic values 3)

Parameter Symbol Conditions min typ max Unit

Collector (-emitter) breakdownvoltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 3300 V

Collector-emitter 4)

saturation voltage VCE sat IC = 450 A, VGE = 15 V

Tvj = 25 °C 2.5 2.9 V

Tvj = 125 °C 3.1 3.4 V

Tvj = 150 °C 3.25 V

Collector cut-off current ICES VCE = 3300 V, VGE = 0 V

Tvj = 25 °C 0.005 mA

Tvj = 125 °C 4 mA

Tvj = 150 °C 15 mA

Gate leakage current IGES VCE = 0 V, VGE = ± 20 V, Tvj = 125 °C -500 500 nA

Gate-emitter threshold voltage VGE(TO) IC = 40 mA, VCE = VGE, Tvj = 25 °C 4.7 6.7 V

Gate charge Qge IC = 450 A, VCE = 1800 V, VGE = -15 V ..15 V 3.3 µC

Input capacitance Cies

VCE = 25 V, VGE = 0 V, f = 1 MHz,Tvj = 25 °C

54 nF

Output capacitance Coes 3.1 nF

Reverse transfer capacitance Cres 2.4 nF

Internal gate resistance RGint per switch 1.19 Ω

Turn-on delay time td(on)VCC = 1800 V, IC = 450 A,RG = 1.5 W, CGE = 0 nF,VGE = ±15 V,Ls = 30 nH, inductive load

Tvj = 25 °C 320 ns

Tvj = 125 °C 350 ns

Tvj = 150 °C 355 ns

Rise time tr

Tvj = 25 °C 75 ns

Tvj = 125 °C 85 ns

Tvj = 150 °C 90 ns

Turn-off delay time td(off)VCC = 1800 V, IC = 450 A,RG = 1.5 W, CGE = 0 nF,VGE = ±15 V,Ls = 30 nH, inductive load

Tvj = 25 °C 860 ns

Tvj = 125 °C 1015 ns

Tvj = 150 °C 1050 ns

Fall time tf

Tvj = 25 °C 250 ns

Tvj = 125 °C 350 ns

Tvj = 150 °C 375 ns

Turn-on switching energy Eon

VCC = 1800 V, IC = 450 A,RG = 1.5 W, CGE = 0 nF,VGE = ±15 V,Ls = 30 nH, inductive load

Tvj = 25 °C 520 mJ

Tvj = 125 °C 700 mJ

Tvj = 150 °C 770 mJ

Turn-off switching energy Eoff

VCC = 1800 V, IC = 450 A,RG = 1.5 W, CGE = 0 nF,VGE = ±15 V,Ls = 30 nH, inductive load

Tvj = 25 °C 530 mJ

Tvj = 125 °C 730 mJ

Tvj = 150 °C 800 mJ

Short circuit current ISC VCC = 2500 V, VGE = 15 V Tvj start = 150 °C 1900 A

3) Characteristic values according to IEC 60747 – 94) Collector-emitter saturation voltage is given at chip level

3 5SNG 0450X330300 | Doc. No. 5SYA 1458-03 05-2020

Diode characteristic values 5)

Parameter Symbol Conditions min typ max Unit

Forward voltage 6) VF IF = 450 A

Tvj = 25 °C 2.05 2.5 V

Tvj = 125 °C 2.25 2.6 V

Tvj = 150 °C 2.2 V

Peak reverse recovery current IRM

VCC = 1800 V,IF = 450 A,VGE = ±15 V,RG = 1.5 W, CGE = 0 nF,Ls = 30 nH, inductive load

Tvj = 25 °C 820 A

Tvj = 125 °C 920 A

Tvj = 150 °C 930 A

Recovered charge Qrr

Tvj = 25 °C 320 µC

Tvj = 125 °C 490 µC

Tvj = 150 °C 570 µC

Reverse recovery time trr

Tvj = 25 °C 790 ns

Tvj = 125 °C 1050 ns

Tvj = 150 °C 1130 ns

Reverse recovery energy Erec

Tvj = 25 °C 360 mJ

Tvj = 125 °C 580 mJ

Tvj = 150 °C 690 mJ

5) Characteristic values according to IEC 60747 – 26) Forward voltage is given at chip level

NTC ThermistorParameter Symbol Conditions min typ max Unit

Rated resistor R25 4.7 kΩ

B-valueB25/85 R2 = R25 exp [B25/85(1/T2 – 1/(298.15K))] 3371 K

B25/100 R2 = R25 exp [B25/100(1/T2 – 1/(298.15K))] 3435 K

Package properties 7)

Parameter Symbol Conditions min typ max Unit

IGBT thermal resistancejunction to case Rth(j-c)IGBT 31 K/kW

Diode thermal resistancejunction to case

Rth(j-c)DIODE 54 K/kW

IGBT thermal resistance 2)

case to heatsinkRth(c-s)IGBT IGBT per switch, l grease = 1W/m x K 30 K/kW

Diode thermal resistance 2)

case to heatsinkRth(c-s)DIODE Diode per switch, l grease = 1W/m x K 35 K/kW

Comparative tracking index CTI 600

Module stray inductance Lσ CE total C1-E2 10 nH

Resistance, terminal-chip

RC1E1 IGBT / Diode

TC = 25 °C 0.25 / 0.34

mΩ

TC = 125 °C 0.35 / 0.47

TC = 150 °C 0.37 / 0.50

RC2E2 IGBT / Diode

TC = 25 °C 0.35 / 0.44

TC = 125 °C 0.49 / 0.62

TC = 150 °C 0.53 / 0.66

2) For detailed mounting instructions refer to ABB Document No. 5SYA 2039

Mechanical properties 7)

Parameter Symbol Conditions min typ max Unit

Dimensions L x W x H Typical 140 x 100 x 38 mm

Clearance distance in air daaccording to IEC 60664-1and EN 50124-1

Term. to base: 20mm

Term. to term: 8

Surface creepage distance dsaccording to IEC 60664-1and EN 50124-1

Term. to base: 30mm

Term. to term: 30

Mass m 820 g

7) Package and mechanical properties according to IEC 60747 – 15

4 5SNG 0450X330300 | Doc. No. 5SYA 1458-03 05-2020

Electrical configuration

Outline drawing

Note: all dimensions are shown in millimeters

This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. VIII.This product has been designed and qualified for Industrial Level.

5 5SNG 0450X330300 | Doc. No. 5SYA 1458-03 05-2020

0 1 2 3 4 50

150

300

450

600

750

900

VGE = 15 V

I C in

A

VCE in V

150 °C

125 °C

25 °C

5 6 7 8 9 10 11 12 130

150

300

450

600

750

900

I C in

A

VGE in V

25 °C

125 °C

150 °C

Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level

0 1 2 3 4 50

150

300

450

600

750

900

Tvj = 25 °C

I C in

A

VCE in V

19 V

17 V

15 V

13 V

11 V

9 V

0 1 2 3 4 5 60

150

300

450

600

750

900

Tvj = 150 °C

I C in

A

VCE in V

19 V

17 V

15 V

13 V

11 V

9 V

Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level

6 5SNG 0450X330300 | Doc. No. 5SYA 1458-03 05-2020

0 150 300 450 600 750 9000.0

0.5

1.0

1.5

2.0

125 °C150 °C

Eoff

Eon

VCC = 1800 VVGE = ±15 VRGon = 1.5 W

RGoff = 1.5 WCGE = 0 nFTvj = 125, 150 °CLs = 30 nH

Eon

, Eof

f in

J

IC in A0 1 2 3 4 5 6 7 8 9 10 11

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

125 °C150 °C

VCC = 1800 VIC = 450 AVGE = ±15 VCGE = 0 nFTvj = 125, 150 °CLs = 30 nH

Eon

, Eof

f in

JRG in W

Eon

Eoff

Fig. 5 Typical switching energies per pulse vs. collector current Fig. 6 Typical switching energies per pulse vs. gate resistor

0 150 300 450 600 750 9000.01

0.1

1

t d(on

), t r,

t d(o

ff),t f

in µ

s

td(on)

tr

tf

td(off)

VCC = 1800 VVGE = ±15 VRGon = 1.5 W

RGoff = 1.5 WCGE = 0 nFTvj = 150 °CLs = 30 nH

IC in A0 1 2 3 4 5 6 7 8 9 10 11

0.1

1

t d(on

), t r,

t d(o

ff),t f

in

µs td(on)

tr

tf

td(off)

VCC = 1800 VIC = 450 AVGE = ±15 VCGE = 0 nFTvj = 150 °CLs = 30 nH

RG in W

Fig. 7 Typical switching times vs. collector current Fig. 8 Typical switching times vs. gate resistor

7 5SNG 0450X330300 | Doc. No. 5SYA 1458-03 05-2020

0 5 10 15 20 25 30 35100

101

102

VGE = 0 VfOSC = 1 MHzVOSC = 50 mV

C in

nF

VCE in V

Cies

Coes

Cres

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0-15

-10

-5

0

5

10

15

20

VG

Ein

V

QG in µC

VCC = 1800 V

VCC = 2500 V

Fig. 9 Typical capacitances vs. collector-emitter voltage Fig. 10 Typical gate charge characteristics

0 500 1000 1500 2000 2500 3000 35000.0

0.5

1.0

1.5

2.0

chip module

VCC £ 2500 V, Tvj = -40..150 °CVGE = ±15 V, RG = 1.5 W

I Cpu

lse/ I

C

VCE in V

Fig. 11 Turn-off safe operating area (RBSOA)

8 5SNG 0450X330300 | Doc. No. 5SYA 1458-03 05-2020

0 150 300 450 600 750 9000

250

500

750

1000

Qrr

125 °C150 °C

IRM

Erec

VCC = 1800 VVGE = ±15 VRGon = 1.5 WCGE = 0 nFTvj = 125, 150 °CLs = 30 nH

E rec

in m

J, I R

M in

A, Q

rr in

µC

IF in A2 3 4 5 6 7 8

300

450

600

750

900

1050

1200

125 °C150 °C

RG =

10

W

RG =

6.8

W

RG =

1.5

W

RG =

1.2

W

RG =

2.2

W

RG =

3.3

W

Erec

E rec

in m

J, I R

M in

A, Q

rr in

µC

IRM

Qrr

VCC = 1800 VIc = 450 AVGE = ±15 VCGE = 0 nFTvj = 125, 150 °CLs = 30 nH

di/dt in kA/µs

RG =

4.7

W

Fig. 12 Typical reverse recovery characteristics vs. forward current Fig. 13 Typical reverse recovery characteristics vs. di/dt

0 1 2 30

150

300

450

600

750

900

I F in

A

VF in V

150 °C

125 °C

25 °C

0 600 1200 1800 2400 3000 36000

300

600

900

1200VCC £ 2500 Vdi/dt £ 12 kA/msTvj = -40..150 °CLs = 30 nH

I R in

A

VR in V

Fig. 14 Typical diode forward characteristics chip level Fig. 15 Safe operating area diode (SOA)

10-3 10-2 10-1 100 101100

101

102

Zth(j-c) Diode

Zth(j-c) IGBT

Z th(

j-c)

in K

/kW

IG

BT,

DIO

DE

t in s

Analytical function for transient thermal impedance:

)e-(1R=(t)Zn

1i

t/-ic)-(jth å

=

it

i 1 2 3 4 5

IGBT

Ri(K/kW) 17.38 7.31 6.23

ti(ms) 65.7 1220 3.67

DIO

DE Ri(K/kW) 31.1 12.6 9.95

ti(ms) 54.4 3.33 881

Fig. 16 Thermal impedance vs. time

Related documents:5SYA 2042 Failure rates of IGBT modules due to cosmic rays5SYA 2043 Load – cycle capability of HiPaks5SYA 2045 Thermal runaway during blocking5SYA 2053 Applying IGBT5SYA 2057 IGBT diode safe operating area (SOA)5SYA 2058 Surge currents for IGBT diodes5SYA 2093 Thermal design of IGBT modules5SYA 2098 Paralleling of IGBT modules5SYA 2107 Mounting instructions for LinPak modules5SZK 9111 Specification of environmental class for HiPak Storage5SZK 9112 Specification of environmental class for HiPak Transportation5SZK 9113 Specification of environmental class for HiPak Operation (Industry)5SZK 9120 Specification of environmental class for HiPak

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