450mm Metrology and Inspection: The Current State and the Road Ahead

Rand Cottle (CNSE), Nithin Yathapu (GF), Katherine Sieg (Intel)

Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness

– Factory Automation – Current Measurement Precision

• Proposed Standards • Summary

Program Update

• DTM changed from 14nm to <10nm demonstration testing.

• Equipment Performance Metrics (EPM) being updated to included <10nm HVM targets.

• Initial baseline testing shortened to allow for longer CIP.

• DTM schedule shifted from 2013-15 to 2014-16.

New DTM Timeline

Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness

– Factory Automation – Current Measurement Precision

• Proposed Standards • Summary

DTM Schedule Model: Metrology Tools

G450C Test “Levels” vs. Traditional Product Development

Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness

– Factory Automation – Current Measurement Precision

• Proposed Standards • Summary

EPM Revision - Preliminary

Items 14nm < 10nm

Module

FIN/STI Full Pitch 42nm (Fin 10nm) 24nm (Fin 8nm)

Contact CD 20nm (AR 10:1) 10nm (AR 10:1)

Poly Full Pitch* 42nm (Line AR 5:1) 24nm (Line AR 5:1)

BEOL Trench Full Pitch 54nm (Trench AR 3:1) 26nm (Trench AR 3:1)

Generic Items

PWP Particle Size > 30nm > 21nm

PWP Backside Particle 50nm 50nm

Basic Total Variability* < 3.0% < 2.1%

Basic Target Thickness 100% 70%

Basic Geometry to meet pitch shrink 100 50

*Total Variability 𝑇𝑇 = 𝐼𝐼𝐼2 + 𝐼𝑇𝐼2 + 𝐿𝑇𝐿2

Targeted Device Dimension and Basic Generic Rules

Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness

– Factory Automation – Current Measurement Precision

• Proposed Standards • Summary

Test Wafer Strategy • 193i lithography begins virtually in Q3 2014. On-site at G450C Q2

2015. • Immersion lithography will be used for guide patterns. • Directed self assembly (DSA) will be use to construct most of the

<10nm design rule structures. • 100 keV e-beam lithography will be used to patterning requirements

not met by DSA, like programmed defect arrays for inspection sensitivity demonstrations.

Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness

– Factory Automation – Current Measurement Precision

• Proposed Standards • Summary

450mm Metrology Tool Availability Tool Type Status Application

SE/OCD Thickness -operational on-site OCD-Ready to measure

Dielectric or thin metal films thickness and stress

4Pt Probe Operation on-site Sheet resistance 3DAFM Operation on-site Nanotopography, pattern CD

and depth, reference metrology TXRF Operation on-site Metallic contamination XRR/XRF Opaque Film Thickness

Operation on-site Metal thickness, roughness, and density

Overlay 1 tool ready to measure, 1 on-site Q3 2014

litho overlay: DBO and IBO

AMC Analyzer On-site Q3 2014 Outgassing of wafers and carriers, FOUP clean qual

CD-SEM Virtual Q3 2014, On-site Q1 2015

ADI and AEI pattern CD

Advanced Wafer Geometry

Operational Supplier's Site SFQR,ERO, GBIR, nanotopography

450mm Inspection Tool Availability

Tool Type Status Application Macro Inspection Operation on-site Macro defect inspection (blanket and

patterned), front and backside, EBR and bevel etch.

Defect Review SEM Operation on-site Defect imaging and EDS, pattern CD Bare Wafer Particle Inspection

2 tools operational on-site Bare Si and films particle inspection

BF Inspection Supplier's Site Q1 2015 Patterned wafer inspection

Metro and inspection recipes setup and running for a wide range of film stacks, including SiN, a-Si, poly, Oxide (native, thermal and CVD), TiN, Ta, TaN, W, Cu (PVD and ECP), Co, Al, ACL, SiCN, OPL, PR, ULK.

Factory Automation

• SECS/GEM hasn’t changed from 300mm to 450mm

• Most M&I tool running under fully automated MES host control and data collection.

• Remaining M&I tools will be fully automated by Q3 2014.

Measurement Precision vs EPM Targets

Tool Type Measurement Type Current 3σ <10nm EPM 3σ 1.5mm EE Ready?

Bare Wafer Particle Inspection Particle count - 30nm silica spheres ~1% <2% (10nm spheres) yes

Spectroscopic Ellipsometry Dielectric Film Thickness <0.1% <0.1% yes X-ray Fluorescence Metallic Film Thickness <1.5% <0.2% TBD CD-AFM Critical Dimension <1nm TBD TBD 4-Point Probe Sheet Resistance <0.5% TBD TBD

Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness

– Factory Automation – Current Measurement Precision

• Proposed Standards • Summary

Proposed Standards • Edge exclusion reduction from 2mm to 1.5mm

– Gauge studies are being conduction with 1.5mm EE – Process tool DTM data will be collected at 1.5mm EE

• Notchless wafers – Notch to be replaced with 3 sets of laser marked

fiducials on the backside. – First full notchless compatible inspection tool to arrive

Q1 2015. – Retrofitting of current 450mm M&I tools to begin Q1

2015.

Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness

– Factory Automation – Current Measurement Precision

• Proposed Standards • Summary

Summary

• Twelve 450mm metrology and inspection tools up and running at G450C.

• Four more M&I tools will be installed on-site by Q2 2015.

• Gauge studies are underway for unpatterned wafer M&I.

• Patterned wafer M&I will begin Q4 2014.

Thank You!

Notch Replacement Laser Marks