2G HTS Wire Development at SuperPower · parameters of 30 mm Hastelloy C276 substrate developed 20...

superior performance. powerful technology.

SuperPower Inc. is a subsidiary of Furukawa Electric Co. Ltd.

WAMHTS-4 – Barcelona, Spain

2G HTS Wire Development at SuperPower

Drew W. Hazelton

February 16, 2017

WAMHTS-4 Barcelona Spain 16 February, 2017All Rights Reserved. Copyright SuperPower® Inc. 2017

Acknowledgements

• I would like to acknowledge the contributions of the all the members

of the SuperPower team, in particular….

– Yifei Zhang (electromechanical characterization)

– Ryusuke Nakasaki (pinning development)

– Aarthi Sundaram (30 mm development)

– Paul Brownsey (IcBT measurements)

– Gene Carota (MOCVD)

– Masayasu Kasahara (buffer development)

– Allan Knoll (post MOCVD)

2


2G HTS Tape Production

3


2G HTS wire production at SuperPowerIBAD-MOCVD based REBCO wire on Hastelloy substrate

4

• REBCO formulation:

– AP (Advanced Pinning) – with enhanced in-field performance for B//c,

targeting at coil applications such as high-field magnets, SMES,

motors/generators

– CF (Cable Formulation) – for cables, transformers, FCL

• Ic(77K, s.f.)/12mm = 400-600A, piece length = up to 500m.

• Variations in width (2-12mm), substrate thickness (30, 50 or 100µm)

Ag thickness (1-5µm), Cu thickness (10-115µm), and insulation

• Bonding conductors : 2x2mm, 2x4mm, 2x12mm (face to face / back to back )

Cross-sectional image of a Cu-plated wire


2G HTS wire has been produced since 2006

Continuous improvements introduced into processing

MOCVDSubstrate Electropolishing

Buffer Sputtering

IBAD


Conductor development areas

• Manufacturing improvements are a current focus area

– Longer uniform piece lengths

– Run-to-run repeatability

– Tightening process windows

– Improving process hardware

– Maximizing yield

• Enhancing understanding of pinning optimization for operating conditions (4K/high field, 20-50K/2-5 T, 65-77K, lower fields)

– Artificial pinning centers (BZO, others)

– Process control (temperature, growth rate, precursor delivery, etc….)

• Maximizing Je

– Thinner substrates

– Thicker films

6


Ic performance of production enhanced A.P.

wire at 77K/s.f

7

• Magnetic, non-contact measurement

• High special resolution, high speed, reel-to-reel

• Monitoring Ic at multiple production points after MOCVD

• Capable of quantitative 2D uniformity inspection

0m 300m 500m400m200m100m

200A

400A

600A

12mmW


Ic performance of enhanced A.P wire at 77K/s.f

8

• Transport measurement by every 5m, with 40µm copper.

• Extend the piece length up to 500m

0

20

40

60

80

100

120

140

160

180

200

0 100 200 300 400 500

Ic [

A]

at 4

mm

Piece length [m]

500m /4mmW

Ic : production A Ic : production B n-value : production A n-value : production B

1 µV/cm


1

10

100

1000

1 10

Ic [

A]

at

4m

mW

B [T]

77.3K

65K

30K

20K

10K

4.2K

Performance of enhanced A.P wire (7.5% Zr)

9

B//c 4mm

• Enhanced A.P wire shows high in-field performance

Measured by Tohoku University

Ic = 190.9A at 77K

Production Wire


High field IcBT data on 7.5% Zr doped sample

10

M4-288-6

Measured at Tohoku Univ


IcBT typical data – enhanced AP

11


2G HTS Tape R&D

• Pinning

• Thick film

• Thinner substrates

12


TEM analysis for enhanced Zr doping

13

Zr = 7.5%

Size : 4.4~6.2nm

Distance: 20.8~26.8nm

Zr = 11.5%

Size : 4.4~5.6nm

Distance: 16~20.7nm

Zr = 15%

Size : 4.4~5.6nm

Distance: 12.8~18.3nm


0.1 1 10

200

400

600

800

1000

1200

1400 M3-1176-4 N1

M3-1176-4 N2

M3-1176-4 N3

M3-1176-4 N1new

M3-1211-5 N1

M3-1211-5 N2

M3-1211-5 N3

M3-1211-5 N1new

M3-1216-2 N4

M3-1216-2 N7

M3-1216-2 N8

M3-1216-2 N3new

M3-1216-2 N4new

M3-1216-4 N4

M3-1216-4 N5

M3-1216-4 N1new

M3-1216-4 N2new

M3-1216-4 N1a

M3-1216-4 N2

SP215

M3-1216-2 HFI c(B

), A

B, T

Below ≈2T 15% Zr tape has lower Ic than 7.5% Zr production line

tape

Combination of Ic(B,4K) measured in resistive and superconducting magnets

7.5% Zr,

production line

(M3-1211-5)

7.5% Zr,

production

line

(M3-1176)

7.5% Zr,

R&D (M3-

1216-2)

15% Zr, R&D

(M3-1216-4)

Highest Jc tape

from purchased

for 32T project

2

0

3

0


R&D tapes with Zr=15%

15

2-1

2-3

M3-1166-10

A.P. type with 15%

M3-1216-4

High-mag type with 15%

1-1

1-3

1-4

Vertical BZO nano-rods with additional horizontal REOx growths


Production line 7.5%

Zr

(M3-1211-5)

7.5% Zr R&D

(M3-1216-2)

15% Zr, R&D

(M3-1216-4)

Production line 7.5%

Zr

(M3-1176-4)

ReBCO surface of R&D tapes are free from a-axis grains and

CuO grains


0 20 40 60 80 100 120 140 160 180 2000

100

200

300

400

500I c

(4.2

K, 1

5T

, B

IIc),

A

Ic(77K, SF), A

15% Zr,

R&D

7.5% Zr, R&D

7.5% Zr,

production 7.5% Zr,

production

Run Number Tape Lift Factor

M3-1216-4 15% Zr R&D 8.76

M3-1216-2 7.5% Zr, R&D 4.72

M3-1176-4

7.5% Zr, Production

line 3.06

M3-1211-5

7.5% Zr, Production

line 1.64

Very different lift factors for compared tapesInterpretation: Additional pinning centers are not effective at 77K,

SF


Thick film development progressing

18

Applied Field (T) Ic (A) – 4 mmW

5 1408

8 989

10 835

12 729

15 615

17 561

All B//c

R&D M4-364-2

Zr 7.5%, high mag

2.7 mm thick REBCO film

0

100

200

300

400

500

600

0 0.5 1 1.5 2 2.5 3

Ic [

A]

at 4

.1K

/17

T

Film thickness [um]

R&D

Production

High-mag 7.5%

1 pass

2 pass

3 pass

5 pass

~0.6 mm

~1.25 mm

~1.75 mm

~2.6 mm


Development progress of 30µm substrate

19

• Base performance of 30µm substrates are comparable to 50µm.

0

20

40

60

80

100

120

140

160

0 20 40 60 80 100 120 140 160

I c(A

) /

N-v

alu

e

Tape Length (m)

SCS4030, Ic SCS3030, Ic SCS2030, Ic

SCS4030, n-value SCS3030, n-value SCS2030, n-value

SCS2030, 75 A

SCS3030, 110A

SCS4030, 144 A


Electropolishing, buffer and MOCVD deposition

parameters of 30 mm Hastelloy C276 substrate

developed

20

AFM 5 x 5 um scan obtained from 30 um

thick electropolished Hastelloy C-276.

(a) In-plane texture and (b) (110) pole figure of LMO

buffered IBAD MgO template on 30 um substrate.

(103) Pole figure of

REBCO film with 7.5% Zr

deposited on IBAD MgO

template on 30 µm

substrate.


Improved Je demonstrated with 30 mm tapes

21

3 4 5 6 7 8 9 10 20 30

30

40

50

60

708090

100

200

300

400

500 SP-215, 50 um substrate

M4-337-2, 30 um substrate

Je (

B,

4.2

K),

kA

/cm

2

B, T

Engineering current

density at 4.2 K vs.

applied field for 30

um and 50 um

ReBCO tapes with

7.5% Zr

Measured at NHMFL


16 superpower tapes wound helically• Copper core: 2.2 mm diameter• 2 mm wide tapes with 30 μm substrate• 6 mm twist pitch with partially transposed

tapes for low AC loss • Wire outer diameter: 3 mm• Terminal diameter: 6.35 mm• Nominal wire Ic: > 1,000 A (77 K)

Applications• High field magnets• Accelerator magnets• Fusion magnets• High power density transmission

Value desired for

high-field research

magnets

Value desired for

accelerator magnets

such as CCT dipoles

High magnetic field critical current density obtainable by increasing wire diameter and decreasing substrate thickness

CORC®

Robust, Flexible, Compact.

CORC®

CORC® wires using SuperPower tapes


Prototyping of quasi-Rutherford style cable

structure

• 8x 30 mm substrate x

2mm wide tapes

wrapped around 14

mm x 2 mm core (1

mm radius) without Ic

degradation.

• Thinner substrates and

narrower tapes will

enable smaller, more

flexible core.


2G HTS Tape electromechanical

characterization

24


Studies on mechanical/electromechanical properties

• Mechanical behaviors under various stress conditions at RT and/or 77K

• Electromechanical testing for stress (strain) dependence of Ic at 77K

• Electromechanical strength determined by critical stress with 95% Ic retention

25

Axial tensile

RT or 77K w/ Ic

Transverse tensile

Stud method

RT or 77K w/ Ic

Fixture for mechanical/electromechanical testingNormalized Ic vs. axial tensile stress for

WAMHTS-4 Barcelona Spain 16 February, 2017All Rights Reserved. Copyright SuperPower® Inc. 2017 26

Studies on mechanical/electromechanical properties

Transverse tensile

Pin-pull method

RT

Transverse tensile

Anvil method

RT or 77K Weibull analysis results – anvil test

90 Peel test, RT


Electromechanical property - Ic under tension at 77K

New Process

550MPa

Ic/Ic(0)=0.95

A.P

Enhanced A.P

SCS12050 with 40µm copper


Stress-strain relationship curves of four different SCS4050 wires. The critical

strain and irreversible strain as well as the corresponding critical stress and

irreversible stress illustrate the dependence and independence of these

properties on the Cu stabilizer thickness.


Summary

29

• Strong focus on processing to improve uniformity, repeatability, piece lengths and yield.

• Maximize current capacity while developing next generation equipment

– When is the time to pull the trigger?

• Enhance performance parameters for developing operating spaces

– Thinner substrates

– Thicker films

– Optimized pinning

• Continue to improve mechanical properties

– Delamination mitigation

– Ic (e)


END

superior performance. powerful technology.

Thank you for your attention

http://www.superpower-inc.com/

SuperPower Inc. 450 Duane Ave. Schenectady, NY 12304 USA

Tel: (518) 346-1414

Fax: (518) 346-6080

2G HTS Wire Development at SuperPower · parameters of 30 mm Hastelloy C276 substrate developed 20...

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