2015 International Conference on Compound Semiconductor ...csmantech.org/OldSite/Conference...

2015 International Conference on Compound Semiconductor Manufacturing Technology

May 18th – 21st, 2015 www.csmantech.org

Hyatt Regency Scottsdale Resort & Spa at Gainey Ranch

Scottsdale, Arizona, USA

http://www.csmantech.org/

2 2015 CS ManTech

Photographs courtesy of

Scottsdale Convention & Visitors Bureau

Hyatt Regency Scottsdale Resort & Spa

2015 CS ManTech 3

CONFERENCE AT A GLANCE

SUNDAY, May 17th

6:00 PM – 8:00 PM REGISTRATION Vaquero A&E Booths MONDAY, May 18th 7:00 AM – 7:00 PM REGISTRATION Vaquero A&E Booths 7:00 AM – 8:00 AM CS MANTECH

BREAKFAST Arizona Ballroom IV 8:00 AM – 4:45 PM CS MANTECH

WORKSHOPS Arizona Ballroom I-III 7:00 AM – 8:15 AM ROCS BREAKFAST Arizona Ballroom V 8:30 AM – 5:00 PM ROCS WORKSHOP Arizona Ballroom VI-VIII 12:30 PM – 1:30 PM LUNCHEON FOR

WORKSHOPS Arizona Ballroom IV-V 6:00 PM – 9:00 PM EXHIBITS RECEPTION Vaquero Ballroom TUESDAY, May 19th

7:00 AM – 5:00 PM REGISTRATION Vaquero A&E Booths 7:00 AM – 8:30 AM BREAKFAST Vaquero Ballroom – Exhibits 8:30 AM – 9:00 AM OPENING CEREMONIES Arizona Ballroom 8:30 AM – 5:20 PM EXHIBIT HOURS Vaquero Ballroom 9:00 AM – 9:30 AM KEYNOTE: Prof. Hiroshi

Amano – Nobel Prize for Physics

Arizona Ballroom 9:30 AM – 11:00 AM SESSION 1: PLENARY

Arizona Ballroom 11:00 AM – 1:00 PM EXHIBITS LUNCH Vaquero Ballroom

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1:00 PM – 2:50 PM SESSION 2: COMPOUND SEMICONDUCTOR TRENDS

Arizona Ballroom 2:50 PM – 3:40 PM BREAK Vaquero Ballroom – Exhibits 3:40 PM – 5:20 PM SESSION 3: GaN

MANUFACTURING Arizona Ballroom 5:30 PM – 6:30 PM EXHIBITORS’ FORUMS Dunes A-B, Markland

Boardroom, Hyatt Boardroom 5:30 PM – 6:30 PM STUDENT FORUM Arroys E 7:00 PM –10:00 PM INTERNATIONAL

RECEPTION Buses Depart at 6:30 PM WEDNESDAY, May 20th 7:00 AM – 5:00 PM REGISTRATION Vaquero A&E Booths 7:00 AM – 8:30 AM BREAKFAST Vaquero Ballroom – Exhibits 8:00 AM – 9:40 AM SESSION 4: MATERIALS

Arizona Ballroom I-IV 8:00 AM – 9:40 AM SESSION 5:

METALIZATION Arizona Ballroom V-VIII 8:30 AM – 11:00 AM EXHIBIT HOURS Vaquero Ballroom 9:40 AM – 10:20 AM BREAK Vaquero Ballroom - Exhibits 10:20 AM – 12:00 PM SESSION 6: GaN

MATERIALS Arizona Ballroom I-IV 10:20 AM – 12:00 PM SESSION 7: GaN DRY

ETCH Arizona Ballroom V-VIII 12:00 PM – 1:30 PM OPEN LUNCH Time at you own leisure 1:30 PM – 3:10 PM SESSION 8: THERMAL

MANAGEMENT FOR HIGH POWER DEVICES

Arizona Ballroom I-IV

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1:30 PM – 3:10 PM SESSION 9: GaN Annealing/Passivation Arizona Ballroom V-VIII

3:10 PM – 3:30 PM BREAK Vaquero Ballroom 3:30 PM – 5:10 PM SESSION 10: TEST/YIELD Arizona Ballroom I-IV 3:30 PM – 5:10 PM SESSION 11:

MANUFACTURING IMPROVEMENTS Arizona Ballroom V-VIII

5:10 PM – 5:50 PM RUMP SESSION

RECEPTION Vaquero Ballroom F1 & F2 5:50 PM – 6:50 PM RUMP SESSIONS A-D Vaquero Ballroom E1 & E2,

G1& G2 7:00 PM – 9:00 PM SEMI STANDARDS

MEETING Dunes B

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THURSDAY, May 21st

7:00 AM – 9:30 AM REGISTRATION Vaquero A&E Booths 7:00 AM – 8:30 AM BREAKFAST Vaquero ABCD 8:00 AM – 9:40 AM SESSION 12: GaAs

PROCESSING Arizona Ballroom I-IV 8:00 AM – 9:40 AM SESSION 13: GaN RF

DEVICES Arizona Ballroom V-VIII 9:40 AM –10:10 AM BREAK South Foyer & Desert

Garden 10:10 AM –12:00 PM SESSION 14: III-V DEVICES Arizona Ballroom I-IV 10:10 AM –12:00 PM SESSION 15: GaN POWER

ELECTRONICS Arizona Ballroom V-VIII

12:00 PM – 1:00 PM LUNCH

Vaquero ABCD 1:00 PM – 1:30 PM 30th Anniversary: A Look

Ahead Vaquero ABCD 1:30 PM – 3:00 PM SESSION 16: GaN

RELIABILITY Arizona Ballroom I-IV 3:00 PM – 4:00 PM SESSION 17: POSTERS South Foyer & Desert

Garden 4:00 PM – 4:30 PM CLOSING RECEPTION South Foyer & Desert

Garden

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MESSAGE FROM THE CONFERENCE CHAIR

The 2015 conference will mark the 30th anniversary of

CS MANTECH, the only conference dedicated to the

manufacturing challenges and opportunities in the

Compound Semiconductor industry. From the inaugural

conference in 1986, CS MANTECH has stayed true to its

original intent to be a forum to discuss “manufacturing

science and technology”. GaAs, and III-V’s in general,

were very much the “material of the future” in 1986,

holding out much promise but innumerable technical and

commercial challenges. It was, to quote one author, an

“industry made up of young, small high technology start-

ups”. State of the art wafer throughput was measured in

tens or (shock!) hundreds of 3” diameter wafers per week

and reported yields ranged from 8% to near 65% (!). The

majority of the papers submitted at the first conference

envisaged GaAs primarily as a niche, digital LSI

technology. In 2015, largely in due to the intervening wide

spread adoption of mobile phones, GaAs IC’s are now

essentially a consumer driven, analog market. Most, if not

all, of this year’s attendees will own or hold in their hand

phones that contain GaAs based modules. Behind the

commercial success in the intervening 30 years, lie the

cumulative expertise, foresight and experience of

numerous organizations and individuals that have

facilitated production at efficiencies and cost levels few

would have dared speculate possible in 1986. Could the

original attendees ever have imagined a world so

seamlessly interconnected and reliant on III-V technology

that would require and support the currently installed GaAs

fabrication capacity?

The 2015 CS MANTECH conference encompasses a

diverse technical program covering several material

systems, processing steps, devices and applications.

Recent conferences have witnessed a steady increase in

activity and interest in wide-band gap materials that has

paralleled the early focus on GaAs. This year’s program

continues that trend with a majority of the contributed

presentations focused on GaN or related materials. It is

interesting to speculate whether this technology will follow

a similar long term trajectory to GaAs. Will attendees 10,

20 or even 30 years from now, be discussing how

everyone’s lives were shaped by the innovations the

technology enabled? Will the numbers of wafers and

devices being produced today and the problems being

tackled both technically and commercially, seem almost

trivial in hindsight?

This year’s CS MANTECH will kick-off on Monday

with a series of workshops that will provide a primer on

RF technology. Once again, the ROCS Symposium will be

co-located with CS MANTECH and run in parallel with

the workshops. The technical sessions will kick-off on

Tuesday and continue throughout the week.

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In the spirit of the impact compound semiconductors are

making, we are greatly honored to have Dr Hiroshi

Amano, winner of the 2014 Nobel Prize in Physics, as our

keynote speaker. The international recognition of their

fundamental enabling work on solid state lighting is

testament to the advances in the basic the understanding of

III-V materials, the ability to manufacture in volume and

the promise the compound semiconductors hold for even

greater advances in the future.

The technical sessions will continue through the week

and will cover, amongst other topics, materials,

metallization, etching, test, reliability, GaN power and

GaN RF devices. The conference will also include the

traditional supplier exhibits, exhibitor forums, rump

sessions, student forum and SEMI standards meetings.

Networking opportunities will abound and will include

heading off-site for the conference International Reception.

As with previous CS MANTECH’s, the 2015 conference

has relied heavily on many individuals who have

volunteered their time to ensure its success. I would like to

thank all the volunteers on both the organizing committees,

along with their supporting organizations, who have

enabled CS MANTECH to reach and mark its 30th

anniversary.

On behalf of both the Executive and Technical Program

Committees, welcome to the 2015 CS MANTECH in

Scottsdale Arizona!

Paul Cooke

IQE RF LLC

Conference Chair,

2015 CS MANTECH

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2015 CONFERENCE SPONSORS

CS MANTECH is an independent not-for-profit

organization whose mission is to promote technical

discussion and scientific education in the compound

semiconductor manufacturing industry. The continued

success of the conference is enabled by donations from

corporate sponsors. The 2015 CS MANTECH

Conference Committee gratefully acknowledges the

support from our sponsors.

Platinum Sponsors:

Northrop Grumman Corporation Plasma-Therm, LLC Skyworks Solutions

Qorvo

MAX IEG

Gold Sponsors:

Accel-RF SPTS Technologies

SawStreet LLC Avago Technologies Virginia Diodes, Inc

Cree, Inc. Brewer Science

Vacuum Engineering & Materials Win Semiconductors

Materion Sumika Electronic Materials Inc.

OEM Group

SCIOCS

Silver Sponsors:

CMK, s.r.o. Freiberger MACOM

EMD Performance Materials Corp.

Itochu Plastics Inc.

Media Sponsors: Semiconductor Today

i-Micronews

Compound Semiconductor Magazine

Microwave Journal

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2014 CONFERENCE SPONSORS We would again like to thank our 2014 sponsors!

Platinum Sponsors:

Skyworks Solutions RF Micro Devices

Plasma-Therm, LLC Northrop Grumman ES

Gold Sponsors:

WIN Semiconductor Virginia Diodes, Inc

Sumika Electronic Materials, Inc SPTS Technologies

CMK, s.r.o Materion Corporation

AIXTRON SE Brewer Science

Silver Sponsors:

TriQuint Semiconductor MACOM Freiberger

Cree, Inc.

AXT Hitachi Metals

Avago Technologies

Media Sponsors:

Semiconductor Today i-Micronews

Compound Semiconductor Magazine

Microwave Journal

2015 CS ManTech 11

2015 CONFERENCE HIGHLIGHTS

The 2015 CS MANTECH program begins on Monday,

May 18th with a series of tutorial workshops. This year’s

workshop theme is RF for Device and Fab Engineers:

Basic and Advanced Measurements, Device Modeling,

Power Amplifier Design, and RF Packaging. Please see

the MANTECH WORKSHOP section for details.

Also on Monday, CS MANTECH is pleased to be

hosting the internationally recognized Reliability of

Compound Semiconductor (ROCS) workshop. This

workshop is the premier forum for the presentation of the

latest results and new developments related to compound

semiconductor reliability. The JEDEC Committee JC-14.7

sponsors the ROCS workshop. Please see

http://www.jedec.org/home/gaas for details.

The conference social functions begin Monday evening

at 6:00pm with the Exhibitor Reception. Attendees will

have the opportunity to interact with material suppliers,

tool manufacturers, and service provides. This is a great

chance to touch base with current vendors, view new

offerings, and network with colleagues all while enjoying a

taste of the Southwest.

The CS MANTECH Conference begins Tuesday

morning with opening ceremonies that include the 2014

Best Paper awards, Sponsorship Recognition, and a

conference overview along with a short tutorial on the

Guidebook Application. There will also be a special

recognition of the CS MANTECH founder, He Bong Kim

on the 30th Anniversary of the conference. Following the

opening functions the CS MANTECH committee is

pleased to announce there will be a Keynote Presentation

from the 2014 Noble Prize for Physics winner, Dr. Hiroshi

Amano from Nagoya University. Dr. Amano will give his

unique perspective on light emitting diodes with his talk

"Lighting the Earth with LEDs, -Past, Present and Future

Prospects of GaN-Based Blue LEDs-".

The technical program begins with a Plenary Session

composed of three invited talks. First, Timothy Heidel

from the office of Advanced Research Projects Agency -

Energy (ARPA-E), will discuss power electronics in his

talk “Strategies for Wide Bandgap, Inexpensive Transistors

for Controlling High-Efficiency Systems”. Second, Dr.

Daniel Green from the Defense Advanced Research

Projects Agency (DARPA) will provide an overview of

current Microsystems Technology Office (MTO)

semiconductor research activities in his talk “Compound

Semiconductor Technology for Modern RF Modules:

Status and Future Directions”. Third, Dr. Tatsuya

Hosotani from Murata Manufacturing will describe

wireless power transfer in his talk “Importance of High

Frequency Compound Semiconductor devices for Wireless

Power Transfer using Direct-Current-Resonance System”.

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Following the Plenary, attendees are welcome to attend a

sponsored luncheon in the Exhibitor Hall.

After lunch, the technical program resumes with sessions

on Compound Semiconductor Trends and GaN

Manufacturing. These serial sessions are composed of

invited and regular submission talks. The Tuesday

technical program concludes with the Exhibitors’ Forum

and Student Forum. The Exhibitors’ Forum provides an

opportunity for exhibitors to present short

marketing/technical presentations to the conference

attendees. The Student Forum provides an opportunity for

students to explore career options through networking with

members of the CS community from industry, academia,

and government. Tuesday evening, CS MANTECH will

host the International Reception

Wednesday morning begins early with breakfast in the

Exhibitor Hall where attendees can follow up on questions

from the Exhibitors’ Forum or meet with one or two new

vendors before the technical sessions begin at 8:00am.

There is a full program of parallel sessions throughout the

day. Morning sessions focus either on III-V and III-N

materials or metallization and dry etch processing.

Afternoon sessions continue thermal analysis and yield

enhancement or annealing/passivation and manufacturing

improvements. Parallel sessions have been structured so

that attendees can move between talks and sessions. The

morning break, held in the Exhibitor Hall, will be one last

opportunity to talk with vendors before the exhibits close

at 11:00am. Lunch is open to allow attendees to explore

the resort area and maybe take in a little sun. Following

the technical sessions, Wednesday evening is host to the

popular CS MANTECH Rump Sessions. Eat, drink, and

debate! Attendees are encouraged to join any (or all) of

the four parallel highly interactive and lively discussions.

Thursday morning the technical program continues with

parallel sessions. Topics include GaN and III-V RF

Devices along with GaN Power Electronics. CS

MANTECH will be providing lunch where Dr. Milton

Feng from the University of Illinois @ Urbana-Champaign

will discuss the future of compound semiconductors in his

talk “Compound Semiconductor Microelectronics /

Photonics Research for the next 30 years – Personal View

based on past 30 years evolution”. After lunch there will

be one serial session on GaN Reliability followed by the

interactive Poster Session. The poster session is a unique

opportunity to talk one-on-one with the author on topics

including photonic devices, photolithography, noise

characterization, and more. Attendees vote for best poster

for which the winning author will receive a Best Poster

Award.

The conference ends Thursday afternoon with a Closing

Reception and the perennial picture contest. However,

instead of the usual Ugly picture, this year the picture

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contest has a Western Theme. Cactus, cowboys, Clint

Eastwood – anything on a Western theme is allowed! The

pictures can be real or photo-shopped, have something to

do with a fab or not, be beautiful or funny, whatever your

creativity can come up with! Amazon gift cards will be

given to the top two pictures, as determined by voting of

attendees at the Interactive Forum. The closing reception

also features the conference feedback prize drawing.

On behalf of the 2015 Technical Program Committee,

Welcome to Scottsdale!

14 2015 CS ManTech

CS MANTECH WORKSHOP

This year the CS-MANTECH workshop provides a crash

course in “all things RF.” Aimed at practicing engineers in

the III-V device community (but also appropriate for

students or anyone curious about how III-V devices can be

characterized, modeled, packaged, or designed into

systems), this workshop will provide attendees with

exposure to a broad range of key RF concepts and

techniques. With coverage of basic and advanced

measurements of RF devices, device modeling, power

amplifier design, and device and circuit packaging, the

workshop will provide a solid foundation as well as

coverage of emerging techniques and approaches in the RF

application space for III-V devices.

This year’s workshop consists of five segments led by

experts in their respective domains. The first two segments

focus on device characterization. The Fundamentals of RF

Measurements will be taught by Marcel Tutt (Freescale);

topics include a discussion of device properties, figures of

merit, and measurements and analysis techniques.

Measurement techniques that will be discussed include S-

parameters, X-parameters, noise figure, and power. On-

wafer and in-fixture measurements, as well as calibration

and de-embedding will be discussed. The second segment,

Advanced Microwave Measurements for Device

Characterization, will be led by Wooyeol Choi (U. Texas-

Dallas). This talk focuses on more advanced RF device

characterization techniques, with emphasis on nonlinear

properties of devices. The role and limitations of pulsed-

bias s-parameter measurements, load-pull (both

conventional as well as harmonic load pull), and large-

signal network analysis will be discussed, with

explanations of both how these techniques are performed

as well as examples of the information they can provide

about the devices under test.

Following the discussion of RF device characterization,

Jonathan Chisum (formerly MIT Lincoln Laboratory, now

at the Univ. of Notre Dame) will lead the third segment,

focusing on circuit design for power amplifiers. RF power

amplifiers (PA) are of critical importance for wireless

communication systems, radar, electronic warfare, and

more. Because PAs are designed to extract the maximum

power, gain, efficiency, or linearity out of a given active

device, there are fundamental tradeoffs that must be made

and therefore PA non-idealities typically limit overall

system performance. This segment will provide an

overview of PA performance parameters, linear,

overdriven, and switch-mode amplifier classes and

topologies (A, B, AB, C, D, E, F, F-1), design methods,

and PA non-idealities in order to understand these design

tradeoffs and their effect on PA performance. The effect

of harmonic termination on amplifier efficiency and

bandwidth, and the impact of device, interconnect, and

packaging parasitics will be discussed. The segment

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culminates with a discussion of advanced topologies and

compensation methods for enhancing PA performance.

The fourth segment of the workshop, Packaging and

Functional Integration, will be jointly led by Elias Reese

and Tarak Railkar (Qorvo). In this segment, the

distinctions between RF/microwave/mm-wave packaging

and other semiconductor packaging will be discussed, and

common RF packaging forms in production today will be

described. In addition, the implications of volume and cost

structure on packaging will be considered, as will the

escalating challenges in RF packaging, including

performance (frequency, power, environmental

considerations), functional integration (performance

improvement, size reduction), and manufacturing cost and

volume. The discussion will also include how the interplay

among semiconductor, packaging technology, and

manufacturing affects the viability and deployment of

electronic systems, and how packaging can impact system

development time and lifecycle cost. Beyond the current

state of the art, the segment will conclude with a look

forward to the packaging needs, trends, and visions for the

future.

The final segment will provide an overview of device

modeling, delivered by David Root (Keysight). Since

modeling work flows differ greatly depending on the

intended user of the models (e.g., circuit designers want

models that simulate quickly and accurately but without

regard to whether or not the models have a physical basis,

while fab and device engineers typically use models to

understand devices and their variation and so require

physically-meaningful models), the various different types

of device models (physically based, empirical, and

behavioral) will be contrasted and their benefits and

limitations discussed. In addition, there is often a reliance

on in-fab device PCMs based on DC and S-parameter

measurements; while these tests are mature, they are often

insufficient to infer the large-signal performance of devices

under the high-power or modulated stimuli typical of

modern systems. The basics of the relationships between

in-fab measurements and model equivalent circuits will be

reviewed, and simple but rigorous principles relating

measurements to nonlinear model characteristics are

reviewed, resulting in a unified description for both FET

and bipolar devices. Finally, trends toward more

sophisticated measurements and simulation models that

could be exploited in fabs will be presented.

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2015 ROCS WORKSHOP

Reliability of Compound Semiconductors

Monday, May 18th, 2015

Hyatt Regency Scottsdale Resort & Spa

Room: Arizona Ballroom VI-VIII

8:30 a.m. – 5:00 p.m.

The 30th annual ROCS Workshop - formerly known as the

GaAs Rel Workshop - will be held in conjunction with the

CS ManTech Conference on Monday May 18th, 2015, at

the Hyatt Regency Scottsdale Resort & Spa in Scottsdale,

AZ. This meeting is sponsored by the JEDEC JC-14.7

Committee on GaAs Reliability and Quality Standards and

the EIA.

The ROCS Workshop brings together researchers,

manufacturers and users of compound semiconductor

materials, devices and circuits. Papers presenting latest

results, including work-in-progress and new developments

in all aspects of compound semiconductor reliability will

be presented. Potential authors are invited to submit an

electronic copy of a one to two page comprehensive

summary, suitable for a 15 minute presentation, to

[email protected]. The deadline for receipt of submissions is

March 2rd, 2015; late papers of significant interest may be

considered up to the date of the Workshop. The Advanced

Program will be published approximately one month prior

to the meeting at http://www.jedec.org/home/gaas/.

Advance registration for the workshop is $100 for

students, $200 for JEDEC members, and $225 for non-

members; on-site registration is $250. Registration

includes a full day of ROCS presentations, two breaks, a

luncheon and a copy of the Proceedings. Late registration

will be available starting at 7:30 a.m. on the morning of the

workshop. For further information or to register on-line

(through May 4th, 2015), visit our web site at

http://www.jedec.org/home/gaas/, or contact: Peter

Ersland, Workshop Chairman, M/A-COM Technology

Solutions, 100 Chelmsford Street, Lowell, MA 01851,

(978) 656-2817, [email protected].

mailto:[email protected]

http://www.jedec.org/home/gaas/

http://www.jedec.org/home/gaas/


2015 CS ManTech 17

INDUSTRY EXHIBITS

As a tradition, the Exhibit held in conjunction with the

CS MANTECH Conference demonstrates the venue for the

compound semiconductor arena that offers an excellent

opportunity for conference attendees and vendors to

directly interact with each other for both parties to submit

detailed information to commonly resolve open issues on

the spot regarding products and services. The portfolio of

Vendors that are on display include those that manufacture

fully functional equipment for various applications or

related sub-assemblies, both for the development and

production of devices and semiconductor materials. Others

offer necessary starting materials like substrates and gases

or any kind of relevant service activities. Representations

on tools for optical inspection and those for evaluation of

materials and components are established in addition as

well. To complete the unique set-up of the Exhibits, both

highly qualified and respected journals providing latest

news from R&D labs or production companies as well as

market research agencies submitting an overview on

what’s happening in the different markets and technologies

of the semiconductor industry are represented also.

Conference attendees as students, whether experienced

or new to this get-together, as well as technical and

business people are receiving latest updates and detailed

information they are looking for or may become aware of

by chance stopping at a booth attracting their attention.

Communication and exchange between vendors and

conference attendees is strongly enhanced through the

Exhibit Reception Monday evening as well as coffee-

breaks during the Exhibit and conference lunch on

Tuesday, all just taking place in the Exhibition Hall around

the booths which further underlines the value of

participation. In conjunction with the Exhibit, the Exhibitor

Forum on Tuesday after the technical sessions has been a

platform to further support provision of the unique

capabilities of companies and vendors to demonstrate

advantages and performance of their products and services,

very beneficial for conference attendees.

As a novelty, the Forum this year will be open to a larger

group of conference attendees to present at this event as

well. To qualify for presentation at the Exhibitors’ Forum

in its new format the person only needs a Full or One Day

Conference Registration, an Exhibitor, or One Day

EXHIBITS ONLY Pass. There will be no extra charge.

To receive more information and to subscribe for one of

the limited number of short presentations, if not yet done

as part of Exhibitor Registration, please contact Ruediger

Schreiner, Exhibits Chair at [email protected].


18 2015 CS ManTech

2015 EXHIBITORS

Accel-RF Corporation AXT, INC.

Brewer Science Inc.

C&D Semiconductor Services, Inc. California Coating Systems

China Crystals Technologies Co., Ltd

ClassOne Technology CREE Inc.

CS CLEAN SYSTEMS Inc

CS Compound Semiconductors DISCO Hi-Tec America, Inc.

DOWA International Corporation

PAK International EpiWorks, Inc.

Evans Analytical Group

Ferrotec USA Corp. FRT of America

Gel-Pak

II-VI Advanced Materials INNOViON Corporation

Insaco, Inc.

Inspectrology Integrated Micro Materials

Intelligent Epitaxy Technology Inc.

IQE JST MANUFACTURING

KITEC GmbH

KLA-Tencor Lehighton Electronics, Inc.

Logitech Ltd

MEI Wet Processing Systems and Services MicroChem Corp

MicroSense, LLC

Oxford Instruments Pall Corporation

Plasma-Therm, LLC

SAMCO INC. SawStreet LLC

Semiconductor Today

Shin-Etsu MicroSi Silicon Materials Inc

SPTS Technologies

Strasbaugh Sumika Eletronic Materials, Inc.

Veeco PSP

Vacuum Engineering & Materials Virginia Diodes Inc

Visual Photonics Epitaxy Co., Ltd

Wafer World Inc. Yole

2015 CS ManTech 19

Special Thanks to our

2014 EXHIBITORS

Accel-RF Corporation AIXTRON

AXT, INC.

BISTel America Inc Brewer Science

Brolis Semiconductors

C&D Semiconductor Services, Inc. Cascade Microtech

China Crystal Technologies Co., Ltd.

Compound Semiconductor Cree Inc.

CS CLEAN SYSTEMS, Inc.

DOWA International Corporation EDAX Inc.

ePAK International

EpiWorks Inc.

Evans Analytical Group

Evatec

FRT of America Gel-Pak

Hi-Solar Co.,Ltd.

Hitachi Metals Ltd II-VI WBG

Insaco, Inc

Inspectrology LLC Wire Transfer Intelligent Epitaxy Technology Inc.

IQE

Kaufman & Robinson KITEC GmbH

KLA-Tencor

Lehighton Electronics, Inc. MEI

MicroChem Corp

Momentive Performance Materials NANOPLAS

NTT Advanced Technology Corporation

Oxford Instruments Plasma-Therm, LLC

Pozzetta

Proton Onsite RIBER INC Check

SAES Pure Gas

SAFC Hitech SAMCO INC.

Semiconductor Today

Shin-Etsu MisroSi Solid State Equipment LLC

SPTS Technologies Sumika Electronic Materials, Inc.

Vacuum Engineering & Materials

Virginia Diodes Inc. Visual Photonics Epitaxy Co., Ltd

WaferWorld Inc

Yole Developpement

20 2015 CS ManTech

2014 BEST PAPERS AWARDS

On Tuesday morning, CS ManTech will formally

recognize the authors of the best paper and best student

paper from the 2014 conference. Both awards are based on

conference attendee on-line feedback. The Best Paper

Award is named in honor of Dr. He Bong Kim, the founder

of the International Conference on Compound

Semiconductor MANufacturing TECHnology.

The He Bong Kim Award winner for the 2014

Conference is:

GaAs Wafer Breakage Reduction

ShibanTiku, Bruce Darley, Manjeet Singh, Ernesto

Ambrozio and Patrick Santos

Skyworks Solutions Inc.

The responses in 2014 warranted an Honorable Mention

to the Best Paper Award which goes to:

GaN Reliability – Where we are and where we need to

go

G.D. Via, AFRL

The Best Student Paper for the 2014 Conference, for

which the principal student author will receive a special

cash award of $1000, is:

Stability and Temperature Dependence of Dynamic

RON in AlN-Passivated AlGaN/GaN HEMT on Si

Substrate

Zhikai Tang, Sen Huang1, and Kevin J. Chen

Hong Kong University of Science and Technology, 1Institute of Microelectronics, Chinese Academy of

Science.

The committee has also elected to award a Honorable

Mention to the Best Student Paper, where the principal

student author will receive a special cash award of $500:

Surface Recombination and Performance Issues of

Scaling Submicron Emitter on Type-II GaAsSb

Huiming Xu, Eric Iverson, and Milton Feng

University of Illinois at Urbana-Champaign

Congratulations to these award winning teams for their

excellent presentation and technical contribution to our

field.

2015 CS ManTech 21

INTERNATIONAL RECEPTION

Come join us

for our annual

International

Reception on

Tuesday evening

May 19th 2015!

This event is

always one of the

highlights of CS-

MANTECH, and this year will be no exception. The

reception will be held at Monterra at West World, and, as

always, will have classic MANTECH Company and

conversation. This year we have a Western theme,

including Western food (think quesadillas, BBQ chicken,

cowboy beans, s’mores), Western games (make sure you

practice your horseshoes and electronic quick draw!), and

fantastic views of a classic Arizona sunset. We will have

live music from one of Phoenix’s favorite local bands, The

Walkens, and even the opportunity to meet some of

Arizona’s most notorious live reptiles (with the most

dangerous ones “behind bars”). CS MANTECH extends

an invitation to family and friends who accompany you at

the Conference to join us. Guest tickets are $50 each. We

strongly encourage you to purchase guest tickets at the

time of your registration to ensure space at the reception.

SEMI STANDARDS MEETING

The SEMI Standards meeting is scheduled for

Wednesday May 20th, from 7:00 pm to 9:00 pm

(immediately following the Rump Sessions. The SEMI

Compound Semiconductor (GaAs, InP and SiC)

Committee invites CS MANTECH Conference attendees

interested in the development of internationally approved

standards for wafer specifications to attend this meeting.

Topics being addressed are GaAs, InP, and SiC

dimensions/orientations and electrical properties, epitaxial

layer specifications (which properties should be specified,

and how they are to be verified), and non-destructive test

methods.

Based in San Jose, CA, SEMI is an international trade

association serving more than 2,400 companies

participating in the semiconductor and flat panel display

equipment and materials markets. SEMI maintains offices

in Brussels, Moscow, Tokyo, Seoul, Hsinchu, Beijing,

Singapore, Austin, Boston and Washington, DC. For

additional information, please contact: Co-Chair: James

Oliver of Northrop Grumman at 410-765-0117 or

[email protected], Co-Chair: Russ Kremer of Freiberger

Compound Materials at 937-291-2899 or russ@fcm-

us.com, or at SEMI Standards contact Paul Trio at 408-

943-6900 or [email protected].

https://webmail04.register.com/promail/src/[email protected]

http://mail.fcm-us.com/scripts/mail/compose.mail?compose=1&.ob=0db6ba5cd57b6f72205aea4c03bf9ff6021f33ae&[email protected]&composecc=&subject=&body=

http://mail.fcm-us.com/scripts/mail/compose.mail?compose=1&.ob=0db6ba5cd57b6f72205aea4c03bf9ff6021f33ae&[email protected]&composecc=&subject=&body=

http://invalid-stuff-detected.example.com/

22 2015 CS ManTech

WESTERN THEME PICTURE CONTEST

To celebrate our

western site for this

year’s conference,

we are sponsoring a

picture contest.

Cactus, cowboys,

Clint Eastwood -

anything on a

Western theme is

allowed! The pictures can be real or photo-shopped, have

something to do with a fab or not, be beautiful or funny,

whatever your creativity can come up with! Amazon gift

cards will be given to the top two pictures, as determined

by voting of attendees at the Poster Session. Help us honor

the American West by submitting a picture to

[email protected].

CONFERENCE CLOSING RECEPTION

The Conference Closing Reception brings the 2015 CS

MANTECH to an end. Immediately following the Poster

Session, the closing reception affords attendees one last

opportunity to exchange business cards, ideas, and

experiences as they reflect on the week. During the

reception voting for Best Poster Presentation and Picture

Contest will be tallied and winners announced.

Returning this year is the Feedback Form Raffle.

Conference feedback on technical content and venue is

valuable to the CS MANTECH committees in structuring

in the conference and technical program year to year. In

addition, conference feedback is used to help select the

Best Paper and Best Student Paper. Each Feedback Form

submitted will be entered into a raffle for a prize. It’s as

simple as that! The drawing will be held during the

closing reception, though the winner need not be present to

win.


2015 CS ManTech 23

2015 EXECUTIVE COMMITTEE

Chairman Emeritus He Bong Kim, GaAstronics

Conference Chair Paul Cooke, IQE RF

Technical Program Chair Dave Via

Publication Chair Thorsten Saeger, Qorvo, Inc.

Local Arrangements Chair Alex Smith, Brewer Science

Exhibits Chair Ruediger Schreiner

Workshop Chair Patrick Fay, University of Notre Dame

Publicity Chair Kelli Rivers1, Vacuum Engineering & Materials Co.

Sponsorship Chair Jansen Uyeda,

Northrop Grumman (AS)

Local Arrangements Vice-Chair Drew Hanser, Veeco Instruments, Inc.

International Liaisons Europe: Joerg Splettstoesser1, United Monolithic Semiconductors

Asia: Chang-Hwang Hua, WIN Semiconductors Corp

Registration Chair Travis Abshere, nLIGHT

Web Chair Michelle Bourke,

Kilbrydon Consulting

University Liaison Shiban Tiku,

Skyworks Solutions, Inc.

International Reception Chair

Karen Moore, Freescale

Information Chair

Andy Souzis,

WBG Materials / A Subsidiary

of II-VI Inc

Budget Chair George Henry, Northrop

Grumman (ES)

Audio Visual Chair Russ Kremer, Freiberger

Compound Materials GmbH

Committee Members Karen Renaldo, Northrop Grumman (ES)

Yohei Otoki, Hitachi Metals Marty Brophy, Avago

Scott Sheppard, CREE, Inc Scott Davis, Sumitomo Electric

Celicia Della-Morrow, Qorvo, Inc. Peter Ersland, M/A-COM Technology Solutions

1 TPC liaison

24 2015 CS ManTech

2015 BOARD OF DIRECTORS

Board of Directors Chair Scott Davis, Sumitomo Electric

Secretary Celicia Della-Morrow, TriQuint Semiconductor

Treasurer Peter Ersland, M/A-COM Technology Solutions

Board Members Mike Barsky, Northrop Grumman (AS)

Marty Brophy, Avago Paul Cooke, IQE RF

Mariam Sadaka, Soitec USA Chris Santana, IQE

Scott Sheppard, CREE, Inc Karen Renaldo, Northrop Grumman (ES)

TECHNICAL PROGRAM COMMITTEE

Jon Abrokwah, Avago Technologies Travis Abshere, nSight

Kamal Alavi, Raytheon

Zaher Bardai, IMN.EPIPHANY, Technology Business Consulting John Blevins, Air Force Research Laboratory

Karlheinz Bock, Fraunhofer Institute

Michelle Bourke, Kilbrydon Consulting Marty Brophy, Avago Technologies

Shawn Burnham, HRL Laboritories

Arnold Chen, Aurrion Suzanne Combe, Qorvo, Inc.

Paul Cooke, IQE RF

Jim Crites, Skyworks Solutions Scott Davis, Sumitomo Electric

Celicia Della-Morrow, Qorvo, Inc.

Stefan Eichler, Freiberger Compound Materials GmbH Andreas Eisenbach, IQE PLC

Peter Ersland, M/A-COM Technology Solutions

Patrick Fay, University of Notre Dame Milton Feng, University of Illinois

Drew Hanser, Veeco Compound Semiconductor, Inc.

Allen Hanson, M/A-COM Technology Solutions Quesnell Hartmann, Epiworks

George Henry, Northrup Grumman ES Haldane Henry, Qorvo, Inc.

Chang-Hwang Hua, WIN Semiconductors Corp.

Ming-Yih Kao, Qorvo, Inc. Hidetoshi Kawasaki, Sony

Toshihide Kikkawa, Transphorm Japan

Gene Kohara, Marubeni America Russell Kremer, Freiberger Compound Materials

Judy Kronwasser, NOVASiC

Martin Kuball, University of Bristol Barbara Landini, Sumika Electronic Materials

Chun-Lim Lau, Booz Allen Hamilton

Tom Low, Agilent Technologies Earl Lum, EJL Wireless Research

Steve Mahon, Cascade Microtech

David Meyer, Naval Research Lab Greg Mills, AXRTECH

Eizo Mitani, Sumitomo Electric Device Innovations, Inc

Bobb Mohondro, S-cubed Karen Moore, Freescale

Corey Nevers, Qorvo, Inc.

Yohei Otoki, Hitachi Metals Karen Renaldo, Northrop Grumman

Kelli Rivers, Vacuum Engineering & Materials Co.

2015 CS ManTech 25

Thomas Roedle, NXP Semiconductors

Mariam Sadaka, Soitec USA

Robert Sadler, GCS

Thorsten Saeger, Qorvo, Inc.

Keith Salzman, Qorvo, Inc. Ruediger Schreiner, Consultant, AIXTRON SE

Shyh-Chiang Shen, Georgia Tech

Scott Sheppard, CREE Alex Smith, Brewer Science, Inc.

Andy Souzis, II-VI, Incorporated

Joerg Splettstoesser, United Monolithic Semiconductor GmbH Kevin Stevens, IQE

Mike Sun, Skyworks Solutions

Shiban Tiku, Skyworks Solutions Naveen Tipirneni, Texas Instruments Inc

Jansen Uyeda, Northrop Grumman

Kevin Vargason, IntelliEPI Dave Via

David Wang, Global Communication Semiconductors

Russ Westerman, Plasma-Therm, LLC Keith Wieber, Qorvo, Inc.

Sharon Woodruff, Northrop Grumman

Chris Youtsey, Microlink Devices Guoliang Zhou, Skyworks

Heribert Zull, OSRAM Opto Semiconductors GmbH

26 2015 CS ManTech

TECHNICAL PROGRAM

Monday, May 18th

CS MANTECH WORKSHOPS

Chair: Patrick Fay, University of Notre Dame

7:00 AM Registration

8:00 AM Fundamentals of RF Measurements

Marcel Tutt, Freescale

9:30 AM Advanced Microwave Measurements for

Device Characterization

Wooyeol Choi, University of Texas, Dallas

10:45 AM BREAK

11:00 AM Device Modeling for Fab Engineers

David Root, Keysight

12:30 PM WORKSHOP LUNCH

(CS MANTECH & ROCS)

1:30 PM Power Amplifier Design

Jonathan Chisum, Univ. of Notre Dam

3:00 PM BREAK

3:15 PM Packaging and Functional Integration

Elias Reese and Tarak Railkar, Qorvo, Inc.

4:45 PM WORKSHOP CLOSING

6:00 PM EXHIBITS RECEPTION

ROCS WORKSHOPS

Chair: Peter Ersland, M/A-COM Technology Solutions

7:30 AM - 8:30 AM ROCS Registration

8:30 AM - 5:00 PM ROCS Workshop Sessions

12:30 AM – 1:30 PM WORKSHOP LUNCH

(CS MANTECH & ROCS)

6:00 PM EXHIBITS RECEPTION

2015 CS ManTech 27

Tuesday, May 19th

CONFERENCE OPENING

8:30 AM Opening Ceremonies

Paul Cooke, IQE RF Conference Chair

8:40 AM 2014 Conference Best Paper Awards

Paul Cooke, IQE RF Conference Chair

8:50 AM Technical Program Highlights

Dave Via

Technical Program Chair

KEYNOTE

Chair: Yohei Otoki, Hitachi Metals

9:00 AM Keynote: Lighting the Earth by LED’s,

Past, Present and Future Prospects of

GaN-Based Blue LED’s

Dr. Hiroshi Amano, 2014 Nobel Prize in

Physics

Nagoya University, Japan

SESSION 1: PLENARY

Chair: David Via

9:30 AM Invited Presentation

1.1 Strategies for Wide Bandgap,

Inexpensive Transistors for Controlling

High-Efficiency Systems

Timothy D. Heidel1, David Henshall1, Pawel

Gradzki2

1Advanced Research Projects Agency –

Energy (ARPA-E) U.S. Department of

Energy, 2Booz Allen Hamilton


1.2 Compound Semiconductor Technology

for Modern RF Modules: Status and

Future Directions

Daniel S. Green1, Carl L. Dohrman2, Avinash

S. Kane2, Tsu-Hsi Chang3 1DARPA, 2Booz Allen Hamilton, 3HetInTec

Corp


1.3 Importance of High Frequency

Compound Semiconductor Devices for

Wireless Power Transfer using Direct-

Current-Resonance System

Tatsuya Hosotani

Murata Manufacturing Co., Ltd

28 2015 CS ManTech

Tuesday, May 19th

11:00 AM EXHIBITS LUNCH

SESSION 2: COMPOUND SEMICONDUCTOR

TRENDS

Chairs: Michelle Bourke, Kilbrydon Consulting

Barb Landini, Sumika Electronic Materials

1:00 PM Invited Presentation

2.1 Mobile RF Front End Integration

James P. Young



2.2 Packaging Trends in the Wireless

Industry

Robert Darveaux, Tony LoBianco, Lori

DeOrio, Andrew Kay, Bob Williams


2:00 PM 2.3 Market and Technology Trends in

WBG Materials for Power Electronics

Applications

Dr. Hong LIN

Compound Semiconductor Market and

Technology Analyst, Yole Développement

2:20 PM 2.4 6-inch VCSEL Wafer Foundry

Economics

David Cheskis

ANADIGICS, Inc.

2:50 PM BREAK

2015 CS ManTech 29

Tuesday, May 19th

SESSION 3: GaN MANUFACTURING

Chairs: Dane Henry, Qorvo, Inc.

Toshihide Kikkawa, Transphorm

3:40 PM 3.1 0.15μm GaN MMIC Manufacturing

Technology for 2-50 GHz Power

Applications

Sabyasachi Nayak, Ming-Yih Kao, Hua-Tang

Chen, Trish Smith, Peter Goeller, Weixiang

Gao, Jose Jimenez, Shuoqi Chen, Charles

Campbell, Gergana Drandova, and Robert

Kraft

Qorvo, Inc.

4:00 PM 3.2 RF Performance Improvement of

0.25μm GaN HEMT Foundry Technology

Jhih-Han Du, Che-Kai Lin, Sheng-Wen Peng,

Fu-Chuan Chu, Kai-Sin Cho, Yue-Ting Lin,

Wei-Chou Wang, Walter Wohlmuth

WIN Semiconductors Corp

4:20 PM 3.3 Effects of Underlying Metals on

Textures of Plated Au films on GaN

Kazuhiro Maeda, Koichiro Nishizawa,

Daisuke Suzuki, Toshihiko Shiga and Hitoshi

Watanabe

Mitsubishi Electric Corporation

4:40 PM 3.4 Enhanced Visual Performance in GaN

HEMT Technology

Kai-Sin Cho, Yue-Ting Lin, Wei-Chou

Wang, Jhih-Han Du, I-Te Cho, and Walter

Wohlmuth

WIN Semiconductors Corp.

5:00 PM 3.5 High Power Plastic Packaging with

GaN

Quinn D. Martin

MACOM Technology Solutions

5:30 PM EXHIBITOR AND STUDENT FORUMS

Please refer to the posted placards in the

exhibit area for forum participants and

scheduled presentations.

7:00 PM INTERNATIONAL RECEPTION

Buses depart at 6:30 pm.

30 2015 CS ManTech

Wednesday, May 20th

SESSION 4: MATERIALS

Chairs: Guoliang Zhou, Skyworks

Kevin Stevens, IQE

8:00 PM 4.1 A Mechanism and a Solution to non-

Uniformity of pHEMT Wafers Grown by

MBE Process

Guoliang Zhou, Mark Borek


8:20 PM 4.2 Fast and Highly Accurate in-situ

Calibration of AlGaAs Ternary

Composition for MOVPE-based Growth of

Edge-Emitting Diode Lasers

M. Zorn1, O. Schulz3, A.J. Spring Thorpe2,

J.-T. Zettler3 1JENOPTIK Diode Lab GmbH, 2NRC of

Canada, 3LayTec AG

8:40 PM 4.3 Orderly Array of in-plane GaAs

Nanowires on Exact (001) Silicon for

Antiphase-Domain-free GaAs Thin Films

Qiang Li, Kar Wei Ng, Kei May Lau

Hong Kong University of Science and

Technology

9:00 PM 4.4 Fabrication of III-V virtual Substrate

on 200 mm Silicon for III-V and Si Devices

Integration David Kohen1, Riko I Made1, Shuyu Bao1,2,

Kwang Hong Lee1, Kenneth Eng Kian Lee1,

Chuan Seng Tan 2, Soon Fatt Yoon 1,2,

Eugene A. Fitzgerald 1,3 1Singapore-MIT Alliance for Research and

Technology Center, 2Nanyang Technological

University, 3Massachusetts Institute of

Technology

9:20 PM 4.5 Improvements in Processing - Carrier

and Material Impacts

Molly Hladik1, Aric Shorey2 1Brewer Science, Inc, 2Corning, Inc

9:40 PM BREAK

2015 CS ManTech 31

Wednesday, May 20th

SESSION 5: METALLIZATION

Chairs: Heribert Zull, Osram Opto Semiconductors

Shiban Tiku, Skyworks Solutions

8:00 AM 5.1 Dynamics of Surface Treatments and

Pre-Cleans for High Volume Wafer

Manufacturing

J. Crites1, W. Snodgrass2, L. Luu3 and

Collaborators 1Skyworks Solutions Inc., 2Avago

Technologies, 3Global Communication

Semiconductors LLC

8:20 AM 5.2 A Simulation of Wafer Temperature-

Time Profile in PVD Process Using an

Exponential Model and Its Applications

Xiaokang Huang1, Romek Bobkowski1,

Duofeng Yue1, Craig Hall1, Charles Dark1,

Arthur McGeown2, Chris Jones2, Paulo

Lima2, Paul Rich2 1Qorvo, Inc., 2SPTS Technologies Ltd.

8:40 AM 5.3 Stress Reduction in Metallization using

in-situ Stress Measurement and Plasma

Assisted Evaporation Silvia Schwyn Thöny, Jürgen Buchholz,

Reinhard Benz

Evatec AG.

9:00 AM 5.4 Wafer-to-Wafer Metal Sputter

Deposition Process Control by Automatic

Deposition Rate Adjustment

Chang’e Weng1, Jinhong Yang1, Ron

Herring1, Brian Zevenbergen1, Joel

Anderson2, Chris Jones2, Liam Cunnane2 1Qorvo, Inc., 2SPTS Technologies Ltd.

9:20 AM 5.5 Understanding Process Capability for

Cu Bump Electroplating

Dave Walker, Brian Zevenbergen

Qorvo, Inc.

9:40 PM BREAK

32 2015 CS ManTech

Wednesday, May 20th

SESSION 6: GaN MATERIALS

Chairs: John Blevins, Air Force Research Laboratory

Judy Kronwasser, NOVASiC

10:20 AM 6.1 The Growth of Low Wafer Bow

AlGaN/GaN Structure on 200mm Si(111) Chieh-Chih Huang1, Frank Ried2, Tomas

Palacios3, Soo Jin Chua4, Eugene A

Fitzgerald5 1Singapore-MIT Alliance for Research and

Technology Center, 2AIXTRON SE, 3Department of Electrical Engineering and

Computer Science-MIT, 4National University

of Singapore, 5Department of Materials

Science and Engineering-MIT.

10:40 AM 6.2 GaN MOCVD on Si via Single Crystal

Rare-Earth Oxide Buffer Layer

Rytis Dargis, Erdem Arkun, Radek Roucka,

Andrew Clark

Translucent Inc.

11:00 AM 6.3 Characterization of Strained

AlGaN/GaN HEMTs on CMP-thinned Si

Substrates Marko J. Tadjer1, Travis J. Anderson2,

Andrew D. Koehler2, Jordan D. Greenlee3,

Karl D. Hobart2, Fritz J. Kub2 1American Society for Engineering

Education, 2United States Naval Research

Laboratory, 3National Research Council

11:20 AM 6.4 Effect of Capping Structure on High

Temperature Annealing of GaN

Jordan D. Greenlee1, Boris N. Feigelson2,

Jennifer K. Hite2, Karl D. Hobart2, Fritz J.

Kub2, Travis J. Anderson2 1National Research Council, 2Naval Research

Laboratory

11:40 AM 6.5 Withdrawn

12:00 PM OPEN LUNCH

Time at your own leisure

2015 CS ManTech 33

Wednesday, May 20th

SESSION 7: GaN DRY ETCH Chairs: Jansen Uyeda, Northrop Grumman (AS)

Russ Westerman, Plasma-Therm, LLC

10:20 AM 7.1 Optimizing the SiC Plasma Etching

Process for Manufacturing Power Devices

Haruna Oda, Peter Wood, HIromichi Ogiya,

Seita Miyoshi, Osamu Tsuji

SAMCO Inc.

10:40 AM 7.2 Electrical Properties of GaN Etched by

Low Bias Power Process

Yuichi Minoura, Naoya Okamoto, Toshihiro

Ohki, Shiro Ozaki, Kozo Makiyama, Keiji

Watanabe

Fujitsu Laboratories Ltd.

11:00 AM 7.3 SiC / GaN Via Process – in Search for

Perfection

Ju-Ai Ruan, Craig Hall, Harold Isom, Tom

Nagle

Qorvo, Inc.

11:20 AM 7.4 Qualification of Backside Via Etch

Process in GaN-on-SiC HEMT Devices

Frank Fan, Minkar Chen, Daniel Hou, David

Wang

Global Communication Semiconductors, LLC

11:40 AM 7.5 Analysis and Optimization of a

Through Substrate Via Etch Process for

Silicon Carbide Substrates

Andreas Thies1, Wilfred John1, Stephan

Freyer1, Jaime Beltran2, Olaf Krüger1 1Ferdinand-Braun-Institut, 2LayTec AG.

12:00 PM OPEN LUNCH

Time at your own leisure

34 2015 CS ManTech

Wednesday, May 20th

SESSION 8: THERMAL MANAGEMENT FOR

HIGH POWER DEVICES Chairs: Tom Low, Keysight Technologies

Chang-Hwang Hua, WIN Semiconductors

Corp.

1:30 PM Student Presentation

8.1 Measuring the Thermal Conductivity

of the GaN Buffer Layer in AlGaN/GaN

HEMTs: Effect of Carbon and Iron

Doping

M.Power1, J.W. Pomeroy1, Y.Otoki2,

T.Tanaka2, J.Wada2, M. Kuzuhara3, W.Jantz4,

A.Souzis5, M.Kuball1 1University of Bristol, 2Hitachi Metals, 3University of Fukui, 4SemiMap Scientific

Instruments, 5II-VI Wide Bandgap Group

1:50 PM 8.2 Rapid Characterization of GaN-on-

Diamond Interfacial Thermal Resistance

Using Contactless Transient

Thermoreflectance

Huarui Sun1, James W. Pomeroy1, Roland B.

Simon1, Daniel Francis2, Firooz Faili2, Daniel

J. Twitchen2, Martin Kuball1 1University of Bristol, 2Element Six

Technologies

2:10 PM 8.3 Comparison of Thermal Properties of

Packaged AlGaN/GaN HFETs on Si and n-

SiC Substrates R. Zhytnytska1, J. Böcker2, H. Just2, E.

Bahat-Treidel1, O. Hilt1, S. Dieckerhoff2, J.

Würfl1, G. Tränkle1 1Ferdinand-Braun-Institut, 2Technische

Universität Berlin

2:30 AM Student Presentation

8.4 Improved Thermal Stabilities in

Normally-off GaN MIS-HEMTs

Cheng Liu, Hanxing Wang, Shu Yang,

Yunyou Lu, Shenghou Liu, Zhikai Tang,

Qimeng Jiang, Kevin J. Chen

The Hong Kong University of Science and

Technology

2:50 AM 8.5 Simulation of the Impact of Through-

Substrate Vias on the Thermal Resistance

of Compound Semiconductor Devices Rajesh Baskaran, Allen W. Hanson

MACOM Technology Solutions Inc.

3:10 PM BREAK

2015 CS ManTech 35

Wednesday, May 20th

SESSION 9: GaN ANNEALING/PASSIVATION Chairs: Scott Sheppard, CREE, Inc.

Paul Pinsukanjana, IntelliEPI

1:30 PM 9.1 Atomic Layer Deposition for GaN

Power Semiconductors

H.C.M. Knoops, Y. Huang, B. Mackenzie, T.

R. Sharp, C. J. Hodson, M. Bourke

Oxford Instruments Plasma Technology

1:50 PM 9.2 Comparative Study of AlGaN/GaN

HEMTs with LPCVD- and PECVD-SiNx

Passivation

Xinhua Wang, Sen Huang, Jinhan Zhang,

Yingkui Zheng, Ke Wei, Xiaojuan Chen,

Guoguo Liu, Tingting Yuan, Weijun Luo, Lei

Pang, Haojie Jiang, Hushan Cui, Junfeng Li,

Chao Zhao, Xinyu Liu

Chinese Academy of Sciences


9.3 A Low-Annealing-Temperature

Process Using Si-Incorporated Contact

Stacks for n-Type III-Nitride

Semiconductors

Yi-Che Lee, A F M Saniul Haq, Shyh-Chiang

Shen

Georgia Institute of Technology


9.4 Impact of Post Fabrication Annealing

PEALD ZrO2 for GaN MOSFETs

K. Bothe, A. Ma, A. Afshar, P. Motamedi, K.

Cadien, D. Barlage

University of Alberta

2:50 PM 9.5 Suppressed Current Collapse in High

Pressure Water Vapor Annealed

AlGaN/GaN HEMTs

Yohei Kobayashi1, Joel T. Asubar1, Koji

Yoshitsugu2, Hirokuni Tokuda1, Masahiro

Horita2, Yukiharu Uraoka2, Masaaki

Kuzuhara1 1University of Fukui, 2Nara Institute of

Science and Technology

3:10 PM BREAK

36 2015 CS ManTech

Wednesday, May 20th

SESSION 10: TEST/YIELD Chairs: Gene Kohara, Marubeni America

Corporation

Robert Sadler, Global Communication

Semiconductors, LLC

3:30 PM 10.1 Improving Return on Invested

Capital (ROIC) in PHEMT Technology

Peng (Tom) Cheng, Patrick Carroll, Tom

Rogers

Qorvo, Inc.

3:50 PM 10.2 Optimization Methodology of Clean

Pads Selection for Lifetime and Test Yield

on RF bump Wafer Test with Membrane

Probe Card

I-Pin Chia, Min-Chang Tu, Paul Yeh

WIN Semiconductor

4:10 PM 10.3 Threshold Voltage Extraction Method

for 2D Devices with Power-Law µ(nS)

Dependence

Vincent Mosser, David Seron, Youcef

Haddab

Itron France

4:30 PM 10.4 Process Optimization to Improve

Known-Good-Die (KGD) Test Accuracy

and Wafer Final Yield Yu Wang, Patrick Carroll, Jing Yao, Zach

Reitmeier, Tom O’Brien, Doug Melville

Qorvo, Inc.

4:50 PM 10.5 Using GaAs Diesort Methods for

Efficient High Volume Capacitor Testing Martin J. Brophy, John Stanback, Thomas

Dungan

Avago Technologies

5:10 PM RUMP SESSION RECEPTION

2015 CS ManTech 37

Wednesday, May 20th

SESSION 11: MANUFACTURING IMPROVMENTS Chairs: Corey Nevers, Qorvo, Inc.

David Wang, Global Communication

Semiconductors

3:30 PM 11.1 Seam Defects Caused by Clear Field

Mask Chrome Dimensions

Richard Nutter

HRL Laboratories, LLC

3:50 PM 11.2 Effect of Tape Liftoff Tool Settings

and Plasma Conditions on Metal Peeling

from Polyimide Surfaces Jiang Wang, David Lipka, Sam Mony, Nercy

Ebrahimi

Skyworks Solution Inc.

4:10 PM 11.3 Effective in-line Monitoring

Structures for Critical Dimension

Measurement in Photolithography

Chao Wang, Lisa Huynh, Kevin Zoglo

Qorvo, Inc.

4:30 PM 11.4 InAlN/GaN HEMTs With Over 100-

GHz Ft Using an Improved Y-Gate

Process by an i-line Stepper

Hiroyuki Ichikawa, Isao Makabe, Tsuyoshi

Kouchi, Ken Nakata, Kazutaka Inoue

Sumitomo Electric Industries, Ltd.

4:50 PM 11.5 Rapid Production Readiness Through

Process Margin Study: How to Isolate the

Epi and Fab Parameters That Really

Matter

S. Hurtt, D. Schwartz, J. Yang, S.

Nedeljkovic, T. Henderson, F. Pool

Qorvo, Inc.

5:10 PM RUMP SESSION RECEPTION

38 2015 CS ManTech

Wednesday, May 20th

5:50 PM RUMP SESSIONS

Chair: Steve Mahon

SESSION A: GaN-on-Si vs. GaN-on-SiC: THE RACE

TO COMMERCIAL MAINSTAY

Moderator: Allen Hanson

M/A-COM Technology Solutions, Inc.

As the benefits of GaN for RF and microwave

applications become increasingly more understood, the

promise of mainstream commercial adoption is also

becoming more apparent every day. With as much as 50%

of GaN revenue presently attributable to government

funding, it’s clear that a different supply chain will be

required to attain mass-market adoption and to move

beyond the performance at any cost mindset. Two schools

of thought have emerged - one favoring GaN-on-Si with

the claim that it will benefit from silicon industry cost

structures that will ultimately result in a significant cost

benefit over the competition. The other advocates the

current mainstream technology - GaN-on-SiC – and site

it’s inherent performance advantages, every decreasing

substrate costs, and a challenge common to both

approaches - the cost of the package - as reasons their

approach will prevail. What say you?

SESSION B: MBE vs MOCVD – ONCE MORE INTO

THE BREACH

Moderator: Andy Souzis

II-VI Technologies

This rump topic was written 20 years ago and now it

returns. With the rise InGaP HBTs in the late 1990s and

early 2000s the obituary of MBE appeared fully written.

However, technology mimics life in that twists are always

around the corner. With integrated optics and the rise of

GaN technologies the MBE approach to applying that ever-

so crucial layer is regaining prominence. Does deposition

speed of MOCVD trump abrupt layer transitions of MBE?

Who owns the scalability race? Is there a winner over the

horizon or will we have this same Rump Session at the

60th anniversary of CS ManTech? Is a winner required?

Bring on your best!

2015 CS ManTech 39

SESSION C: THE KILLER ELEMENTS OF THE

PERIODIC TABLE - WHAT DO YOU

WANT TO KEEP OUT?

Moderator: Michelle Bourke, Kilbrydon Consulting

As compound semiconductors get more diverse with

integrated optics, very high speed transistors, copper

damascene interconnect and other new innovations, the

smorgasbord of chemistries gets very unwieldy. Most of

the issues are in the critical epitaxial layer that defines the

critical electronics and optics. Are there fundamental

“keep out” elements that should be banned from the stage

to avoid contamination issues? What priorities of

functionality take precedent over others- who is first in

line? Is there a need for a roadmap (ala IRTS) to create

some consistency among technologies. Is this time for the

compound semiconductor standard? Say it ain’t so!

SESSION D: GAN FAB VS SILICON FAB - WHAT IS

THE PLAYING FIELD?

Moderator: Greg Mills, AXRETECH

GaN is the hot rising star of the compound community.

Potential scaled use of Si substrate technology looks closer

to reality for GaN compared to the several crashed

attempts with GaAs on Si. This presents the question of

whether a purposed built fab for GaN is needed or can a

shared/repurposed 200mm CMOS fab be the most

effective answer to this promising technology. The Si

industry has reported that, in near term a significant

number of excess of 200m CMOS fabs will become

unprofitable for conventional CMOS and will be available

for other processes. These fabs are courted to be retooled

for MEMS, Filters or Advanced Power Devices. Can GaN

get in line? Does the ramp of GaN devices support the

scale of a 200mm CMOS fab with their very large

capacities or does history repeat itself with the creation of

modest sized III-V fabs as GaN ramps. Who wins here?

Does anyone lose?

7:00 PM SEMI STANDARDS MEETING

40 2015 CS ManTech

Thursday, May 21st

SESSION 12: GaAs PROCESSING Chairs: Jim Crites, Skyworks Solutions

Keith Wieber, Qorvo, Inc.

8:00 AM 12.1 High Aspect Ratio Individual Source

Through Wafer Vias for High Frequency

GaAs pHEMT Processes

H.Stieglauer1, E.Dengler1, M.Hosch1,

P.Michel2, C.Teysandier2, H.Blanck1 1United Monolithic Semiconductors

Germany, 2United Monolithic

Semiconductors France


12.2 A CMOS-compatible Fabrication

Process for Scaled Self-Aligned InGaAs

MOSFETs

Jianqiang Lin, Dimitri A. Antoniadis, and

Jesús A. del Alamo

MIT

8:40 AM 12.3 Effect of Pt Thickness on the Gate

Sinking in a pHEMT Device

Debdas Pal, Julia Okvath

MACOM

9:00 AM 12.4 An Integration of On-Chip High-Q

Inductors by Cu Redistribution Layer

(RDL) with Bumping for InGaP/GaAs

HBT MMIC Jung-Hao Hsu, Shu-Hsiao Tsai, Shih-Wei

Chen, Kay Wu, Cheng-Kuo Lin, and Dennis

Williams, Yu-Chi Wang


9:20 AM 12.5 Highly Linear Ka-Band 0.15µm GaAs

Power pHEMT Process for Use in Low-

Cost Molded QFN Plastic Package

Michael Hosch1, Hermann Stieglauer1,

Charles Teyssandier2, Philippe Auxemery2,

Mikael Richard2, Jan Grünenpütt1, Benoît

Lambert2, Didier Floriot2 and Hervé Blanck1 1United Monolithic Semiconductors

Germany, 2United Monolithic

Semiconductors France

9:40 AM BREAK

2015 CS ManTech 41

Thursday, May 21st

SESSION 13: GAN RF DEVICES Chairs: Martin Kuball, University of Bristol

David Meyer, Naval Research Lab

8:00 AM 13.1 Leakage Current and Two-Tone-

Linearity Investigations on 0.5µm

AlGaN/GaN HEMTs

Bernd Schauwecker, Michael Hosch, Hervé

Blanck

United Monolithic Semiconductors

8:20 AM 13.2 AlInN/GaN HEMTs on SiC and on

Silicon with Regrown Ohmic Contacts by

Selective Ammonia MBE

Stefano Tirelli1, Diego Marti1, Lorenzo

Lugani2, Marco Malinverni2, J.-F. Carlin2, E.

Giraud2, Nicolas Grandjean2, and C. R.

Bolognesi1 1Millimeter-Wave Electronics Group, ETH-

Zürich, 2ICMP, École Polytechnique

Fédérale de Lausanne (EPFL)

8:40 AM 13.3 Correlation between Luminescence

and Current Collapse in AlGaN/GaN

HEMTs

S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda,

and M. Kuzuhara

University of Fukui.

9:00 AM 13.4 Current Dispersion in Short Channel

Al0.32Ga0.68N/GaN HEMTs

K. Y. Osipov, S. A. Chevtchenko, O.

Bengtsson, P. Kurpas, F. Brunner, N. Kemf,

J. Würfl and G. Tränkle

Ferdinand-Braun-Institut

9:20 AM 13.5 Practical Challenges of Processing III-

Nitride/Graphene/SiC Devices

Andrew D. Koehler1, Neeraj Nepal2, Marko J.

Tadjer3, Rachael L. Myers-Ward1, Virginia

D. Wheeler1, Travis J. Anderson1, Michael A.

Mastro1, Jordan D. Greenlee4, Jennifer K.

Hite1, Karl D. Hobart1, Francis J. Kub1 1Naval Research Laboratory, 2Sotera Defense

Solutions, 3ASEE Postdoctoral Fellow

Residing at NRL, 4NRC Postdoctoral Fellow

Residing at NRL

9:40 AM BREAK

42 2015 CS ManTech

Thursday, May 21st

SESSION 14: III-V DEVICES Chairs: Hidetoshi Kawasaki, Sony

Shyh-Chiang Shen, Georgia Tech


14.1 Field Plate Models Applied to

Manufacturability and RF Frequency

Analysis

Robert Coffie

RLC Solutions

10:40 AM 14.2 ESD Protection Device for HEMT

MMICs

Jung-Tao Chung, Shinichiro Takatani,

Cheng-Kuo Lin, Hsi-Tsung Lin, Shao-Chang

Cheng, Shu-Hsiao Tsai, Cheng-Guan Yuan,

Joseph S.M. Liu, Yu-Chi Wang


11:00 AM 14.3 pHEMT Device Characterization for

Current Transient Time Constant and

Link to Error Vector Magnitude

S. Nedeljkovic, S. Hurtt

Qorvo, Inc.


14.4 Development of an InP/GaAsSb

DHBT MMIC Process with a Teflon AF

Interlevel Dielectric

Ralf Flückiger, Rickard Lövblom, Maria

Alexandrova, Hansruedi Benedickter, Olivier

Ostinelli, C. R. Bolognesi

Millimeter-Wave Electronics Group, ETH-

Zürich


14.5 Characterization of Heterojunction

Bipolar Phototransistor with Integrated

Two-Section Light-Emitting Transistors

Cheng-Han Wu1, Yuan-Fu Hsu2, Gong-Sheng

Cheng2, Chao-Hsin Wu1,2 1Graduate Institute of Electronics

Engineering, 2Graduate Institute of Photonics

and Optoelectronics, National Taiwan

University

12:00 PM LUNCH

2015 CS ManTech 43

Thursday, May 21st

SESSION 15: GaN POWER ELECTRONICS

Chairs: Drew Hanser, Veeco Instruments, Inc.

Chris Youtsey, MicroLink Devices


15.1 Vertical Power Semiconductor

Devices Based on Bulk GaN Substrates

I.C. Kizilyalli, X. Xin, T. Prunty, M. Raj, O.

Aktas

Avogy Inc.

10:40 AM 15.2 Above 2000 V Breakdown Voltage on

2 µm-thick Buffer Ultrathin Barrier

AlN/GaN-on-Silicon Transistors

N. Herbecq, I. Roch-Jeune, A. Linge, M.

Zegaoui, F. Medjdoub

Institute of Electronics, Microelectronics and

Nanotechnology

11:00 AM 15.3 EC-2.0eV Trap-Related Dynamic

RON in GaN/Si MISHEMTs

W.Sun, A. Sasikumar, A. Arehart, S. Ringel

Ohio State University

11:20 AM 15.4 Stress and Characterization Strategies

to Assess Oxide Breakdown in High-

Voltage GaN Field-Effect Transistors

S. Warnock, J. A. del Alamo

Massachusetts Institute of Technology

11:40 AM 15.5 RDSON Stability of GaN High Voltage

Power Devices Post Long-Term Stress: A

New Method to Screen Unstable RDSON

Performers Hyeongnam Kim, H. Kannan, Y. Pan, D.

Veereddy, R. Garg, C. Zhu, J. Sun, Bhargav

Pandya, D. Smith, S. Hardikar, M. Imam, T.

McDonald

International Rectifier Corp.

12:00 PM LUNCH

44 2015 CS ManTech

Thursday, May 21st

LUNCH TALK

1:00 PM Compound Semiconductor

Microelectronics / Photonics Research for

the next 30 years – Personal View based on

past 30 year’s evolution.

Dr. Milton Feng

The University of Illinois, Urbana-

Champaign

SESSION 16: GaN RELIABILITY Chairs: Shawn Burnham, HRL Laboratories

Karen Moore, Freescale


16.1 GaN HEMT Lifetesting –

Characterizing Diverse Mechanisms

Bruce M. Paine, Steve R. Polmanter, Vincent

T. Ng, Neil T. Kubota, Carl R. Ignacio

Boeing Network and Space Systems

2:00 PM 16.2 Failure Mechanisms in AlGaN/GaN

HEMTs Irradiated with 2MeV Protons

T.J. Anderson1, A.D. Koehler1, P. Specht2,

B.D. Weaver1, J.D. Greenlee1, M.J. Tadjer1,

J.K. Hite1, M.A. Mastro1, M. Porter3, M.

Wade3, O.C. Dubon2, M. Luysberg4, K.D.

Hobart1, T.R. Weatherford3, F.J. Kub1 1Naval Research Laboratory, 2University of

California, Berkeley, 3Naval Postgraduate

School, 4Ernst-Ruska Research Center

2:20 AM 16.3 Drain - Bulk Leakage Current

Mechanisms and Model for Power GaN

HEMT on Si Substrate

Mirwazul Islam1, Grigory Simin1, Naveen

Tipirneni2, Jungwoo Joh2, Vijay

Krishnamurthy2, Sameer Pendharkar2 1University of South Carolina, 2Texas

Instruments, Dallas, TX

2:40 PM 16.4 Hot-Phonon Effect on the Reliability

of GaN-Based Heterostructure Field-Effect

Transistors

Cemil Kayis1, Hadis Morkoç2 1ASELSAN, Inc., 2Virginia Commonwealth

University

2015 CS ManTech 45

Thursday, May 21st

SESSION 17: POSTER Chairs: Nick Kolarich, Epiworks

Kelli Rivers, Vacuum Engineering &

Materials Co.


17.1 0.18 mm E/D-mode pHEMT using I-

line Photolithography for Microwave

Application

Min-Li Chou1, Yi-Shun Lin2, Ming-Tai Wu2,

Sheng-Chun Wang2, Hsin-Chi Wang2, Li-

Chung Lee2, Zhi-Peng Lin2, Chih-Yu Tseng2,

Fred CH Lin2, Pang-Shao Chen2, Houng-Chi

Wei2, Chian_Gau1, Shih1, Hsien-Chin Chiu1 1Chang Gung University, 2Wavetek

Microelectronics Corp.

Student Presentation

17.2 6A-Operating Current GaN-Based

Enhancement-Mode High Electron

Mobility Transistors

Chih-Hao Wang, Liang-Yu Su, Finella Lee,

Jian-Jang Huang

National Taiwan University


17.3 Enhancement of Cut-off Frequency

and Optical Bandwidth in Light-Emitting

Transistors at High Temperature

I-Te Lee, Chao-Hsin Wu


17.4 Micromachined p-GaN Gate

Normally-off PowerHEMT with an

Optimized Air-Bridge Matrix Layout

Design

Chih-Wei Yang1, Hsiang-Chun Wang1,

Hsien-Chin Chiu1, Chien-Kai Tung2, Tsung-

Cheng Chang2, Schang-jing Hon2

1Chang Gung University, 2Huga Optotech

Inc.

17.5 Optical Frequency Response of GaN-

based Light-emitting Diodes with

Embedded Photonic Crystals

Yu-Feng Yin, Yen-Hsiang Hsu, Liang-Yu

Su, Yuan-Fu Hsu, Li-Cheng Chang, Chao-

Hsin Wu, JianJang Huang


17.6 Si-Ge-Sn based Compound

Semiconductors for Photonic Applications

Radek Roucka, Andrew Clark, Nam Pham

Translucent Inc.

46 2015 CS ManTech

17.7 Withdrawn

17.8 Wide Head T-Shaped Gate Process

for Low-Noise AlGaN/GaN HEMTs

Hyung Sup Yoon, Byoung Gue Min, Jong

Min Lee, Dong Min Kang, Ho Kyun Ahn,

Hae Cheon Kim, Jong Won Lim

Electronics and Telecommunications

Research Institute


17.9 Effect of Gate Threshold Swings by

ALD-Al2O3/AlGaN Interfacial Traps in

GaN Power HEMT with Multiple

Fluorinated Gate Dielectric Layers

Yun-Hsiang Wang1,4, Yung C. Liang1,

Ganesh S. Samudra1, Bo-Jhang Huang2, Ya-

Chu Liao2, Chih-Fang Huang2, Wei-Hung

Kuo3, Guo-Qiang Lo4

1National University of Singapore, 2National

Tsing Hua University, 3Industrial Technology

Research Institute, 4A*STAR Institute of

Microelectronics

CONFERENCE CLOSING

4:00 PM Closing Reception

2015 CS ManTech 47

GENERAL INFORMATION

2015 International Conference on Compound

Semiconductor Manufacturing Technology

May 18th – 21st, 2015

Hyatt Regency Scottsdale Resort & Spa at Gainey Ranch

7500 E. Doubletree Ranch Road

Scottsdale, Arizona, USA, 85258

REGISTRATION INFORMATION (US$)

For Conference Registration, register online at

www.csmantech.org. Register by April 28th to take

advantage of our early bird rate.

www.csmantech.org

On or before Apr. 28 After Apr. 28 Full Conference Registration $580 $680

Student Conference Registration $125 $125 Government Conference Registration $580 $580

One-Day Conference Registration $300 $300

One-Day Exhibit Registration $100 $100 Workshop Registration $175 $275

Government Workshop Registration $175 $175

Payment of the full, student, or government conference

registration fee includes one copy of the printed

Conference Digest (if desired), one copy of the Conference

Digest on a USB memory stick, and admission to all

sessions and the exhibits. It also includes the International

Reception, Exhibits Reception, Exhibits Luncheon, Rump

Session Reception, Interactive Forum Reception,

breakfasts, and refreshment breaks. Additional copies of

the Conference Digest may be purchased at $140 each.

Additional copies of the Conference Digest on a USB

memory stick may be purchased for $50 each.

The one-day registration includes admission to all

sessions for that day, admission to the Exhibits Hall, buffet

breakfast, break refreshments, and lunch. The Rump

Session Reception or Interactive Forum Reception is

included on Wednesday and Thursday, respectively. It also

includes a printed Conference Digest and a Conference

Digest on a USB memory stick. The one-day registration

does not include admission to the International Reception.

The one-day option can be taken only once during the

conference.

Payment of workshop registration includes one copy of

the Workshop Digest, breakfast, Workshop Luncheon and

break refreshments. Additional copies of the Workshop

Notes may be purchased for $100.

Registrants may pay by credit card. The only acceptable

credit cards are Master Card, VISA, and American


48 2015 CS ManTech

Express. REGISTRATION WITHOUT PAYMENT WILL

NOT BE ACCEPTED. All refund requests must be

received by Peter Ersland at the CS MANTECH office

shown below by April 28th for a full refund less a $25

processing fee. NO REFUNDS AFTER APRIL 28, 2015.

CS MANTECH

14525 SW Millikan Way #26585

Beaverton, Oregon 97005-2343

For Advanced Conference Registration, register online at

our Web Site by April 28th.

www.csmantech.org

HOTEL RESERVATIONS

CS MANTECH has arranged for a discounted nightly

rate at the Hyatt Regency Scottsdale Resort & Spa. The

rate for single or double occupancy is $189 per night.

State and local occupancy taxes (currently 14.92%) will be

added to these rates

The CS MANTECH rate includes free guest room

Internet access. State and local occupancy taxes (currently

14.92%) will be added to these rates. For those wishing to

extend their stay, a limited number of rooms are available

at the group rate before and after the conference on a first

come, first served basis.

Please note that if guaranteed by credit card, one night’s

room and tax will be charged if the reservation is cancelled

after 6pm the day before arrival.

Hotel reservations may be made through either:

The CS MANTECH website www.csmantech.org -

Hotel Reservation Link

Calling the Hyatt Regency Scottsdale Resort & Spa

at: +1-480-444-1234

When calling the Hotel directly, please request the CS

MANTECH group rate. To receive the CS MANTECH

rate, Hotel reservations must be received BEFORE

April 16th, 2015. Reservations made after this date will be

subject availability and to the prevailing rates at the Hyatt

Resort.

If you require the US Government rate (ID required)

please call the Hyatt Regency Scottsdale Resort & Spa

directly and notify them you are attending CS MANTECH.

The discounted rate is subject to availability, so please

MAKE YOUR RESERVATION EARLY!


2015 CS ManTech 49

We ask you to please support CS MANTECH and to

enjoy all of the conference activities by staying at our

official 2015 location, the Hyatt Regency Scottsdale

Resort & Spa.

CONFERENCE REGISTRATION &

INFORMATION CENTER

Conference registration is located between the Vaquero

Ballroom (Exhibits) and Arizona Ballroom (Workshop and

Meeting Rooms) in the Vaquero Foyer.

MESSAGE BOARD

A Conference Message Board will be maintained at the

Registration & Information Center during registration

hours. Please advise callers who wish to reach you during

the day to ask the hotel operator to deliver a message to the

CS MANTECH Conference Registration Desk. Please

check the message board periodically.

THE CONFERENCE HOTEL

Escape to the stunning desert vistas of our Scottsdale

luxury resort. Choose our incomparable Scottsdale luxury

hotel for business or leisure and experience services that

define the difference between a hotel and a Hyatt. Enjoy

views of shimmering lakes from the patio or balcony of

your Southwest contemporary guestroom, play 27-holes of

championship golf, or dine alfresco as you gaze at the

majestic McDowell Mountains from our open-air lobby

restaurant and bar. Take advantage of services created to

fill your stay with ease, such as our staffed and 24 hour

self-service Business Center, Hyatt FastBoard™, PDA

Check-in and a 24 hour StayFitTM gym. No matter what

brings you to Hyatt Regency Scottsdale Resort and Spa,

our attentive staff is always ready to assist and ensure your

stay is perfect in every way.

TRANSPORTATION TO THE HOTEL

The Hyatt Regency Scottsdale Resort & Spa can be

reached by car, taxi or shuttle bus from the Phoenix Sky

Harbor Airport:

Transtyle Sedan and SUV Service – offers 24-

hour private chauffer driven services in sedans

that can accommodate up to four passengers and

luggage, and SUV’s that can accommodate up to

six passengers and luggage. Transtyle also offers

Van’s, Stretch Limousines, thirty two passenger

Mini Buses, and full size fifty six passenger

Motor Coaches. Advance reservations required.

50 2015 CS ManTech

Please note: Car seat options not offered. Cost:

$50 Call upon arrival for your car to pick you up,

$70 Meet and Greet Service - have a car waiting

for you upon arrival, SUV Request is an

additional $20, Reservations: Call 800 410 5479

Super Shuttle – offers transportation between the

airport and the hotel 24 hours a day. Upon arrival

at the airport, look for the island marked Van

Service outside of baggage claim. A uniformed

Guest Service Representative will assist you with

your arrangements to the hotel. No advance

reservations are needed from the airport to the

hotel; however, 24 hour advance notice is

requested for return trips from the hotel to the

airport. Cost is $22 per person, each way. Groups

may reserve an entire shuttle for $80. Vans

accommodate a maximum of seven people.

Reservations: Call 800 730 9267

By car - The Hyatt has complementary self-

parking for guests. Directions From Sky Harbor

International Airport (approximately 18 miles):

Exit the airport following the signs to the 202

East. Take the 202 East to the 101 North.

Continue on 101 North to the Via De Ventura

Exit and make a left. Travel West for

approximately 2.5 miles (Via De Ventura turns

into Doubletree Ranch Road). Our Scottsdale AZ

resort will be on the right side just before

Scottsdale Road.

FINANCIAL ASSISTANCE

CS MANTECH encourages presentations and

participation by academic delegates. To support this

participation, limited funding is available to support travel

and conference attendance by student presenters. Requests

will be considered on a first-come, first-served basis.

Please see

http://www.csmantech.org/students/students.html

for details regarding the guidelines and requirements on

applying for financial assistance. Requests or questions

may be sent to the CS MANTECH University Liaison at

[email protected].

http://www.csmantech.org/students/students.html


2015 CS ManTech 51

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