2013 iNEMIWorkshop Novel DS’s Low Loss...

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2013 iNEMI Workshop Jeongdon Kwon Novel DS’s Low Loss Materials for High Speed PCB Oct. 22. 2013 Product Development Team Jeongdon Kwon Doosan Corporation, Electro-Materials BG Yongin, S. KOREA

Transcript of 2013 iNEMIWorkshop Novel DS’s Low Loss...

Page 1: 2013 iNEMIWorkshop Novel DS’s Low Loss …thor.inemi.org/.../PCB_Laminates_WS_102213/Low_Loss_Kwon.pdf2013 iNEMIWorkshop Jeongdon Kwon Novel DS’s Low Loss Materials for High Speed

2013 iNEMI Workshop

Jeongdon Kwon

Novel DS’s Low Loss Materials for High Speed PCB

Oct. 22. 2013Product Development Team

Jeongdon KwonDoosan Corporation, Electro-Materials BG

Yongin, S. KOREA

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Contents

1. Development of New Low Loss Material

- Background of Development

- Strategy of New Resin System

2. Characteristics of New Material

- Products Line-up

- Properties- Properties

- Transmission loss

- Reliability of New materials

3. Summary and Development Plan

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Background of Development

Mobile stationBase transceiver stationSwitching systemProcessing equipment

Satellite communicationMoblie communication

OA Network

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High speed transmission of large volume date High frequency device & module

Router/ switchserver

Communication networks

OA Network

Home NetworkRouter

Signal Higher Frequency

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Signal Velocity (Propagation delay)

V = C/ (ε)1/2

Transmission loss α = Conductor loss(αc) + Dielectric loss (αd)

αd = 23.7 x (ε)1/2 × tan δ × f/C (tan δ : dielectric loss (Df), f : frequency)

(ε : dielectric constant (Dk), C : speed of light)

Why Low Dielectric?

For reduction of αd Low Dk & Df Materials

For reduction of αc Original lower profile or profile-free Conductor

(Required High adhesion technology for low surface roughness foildue to Skin Effect)

b

w

t

b : Dielectric layer thicknessw : Conductor widtht : Conductor thickness

4

εStandard Low Profile

Need Material having lower Df and better adhesion

with lower profile Cu foil.

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Transmission loss

Why Low Dielectric? [Simulation by Polar]

Dk@1GHz Df@1GHz

Dk Simulation(Polar SI9000e)

4.2

0.0153.8

3.5

3.0

Dk@1GHz Df@1GHz

Df Simulation(Polar SI9000e)

4.0

0.015

0.010

0.005

0.002

1.2 mil

8.74 mil

10.1 mil

10.1 mil

8.74 mil

= Conductor loss(αc) + Dielectric loss (αd)

[ αd = 23.7 x Dk1/2 × Df× f/C ]

5

-35

-30

-25

-20

-15

-10

-5

0

4.2

3.8

3.5

3.0

S21 (d

B/line)

-35

-30

-25

-20

-15

-10

-5

0

0.015

0.010

0.005

0.002

20GHz

Frequency (Hz)10GHz0GHz

Df 0.015

Dk 4.0

20GHz

Frequency (Hz)10GHz0GHz

3.0 0.002

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Relation Dielectric medium with Velocity, dielectric loss and signal

Generation of Electromagnetic field

Permeation into length of the surrounding interconnect material

An electrical signal propagation down an given conducting line

A dielectric interaction between electric field from the signal and the surrounding dielectric medium

Why Low Dielectric?

- Source : Handbook of Low and High Dielectric constant Materials and their Applications

Dielectric loss↑ and Velocity ↓(propagation delay)

surrounding dielectric medium

Required lower/non-polar or symmetric molecular structure materials

1 + 2(Σ φi / Σ Vi)

1 - (Σ φi / Σ Vi)ε =

- ε : Dielectric constant- φ : Molar polarization- V : Molar volume

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Peel Strength ↓ Adhesion, Processability & Reliability ↓

How To Overcome the Limitation ?

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Concept of Material for High-Frequency PWBs

Hybrid Materials

Novel high performance material

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Normal or Low Dk/ Low Df Glass fabric

Non-polar oligomer

or polymer

Non-polar oligomer

or polymer

High Tg & Low Dk and Low

loss Hardener

High Tg & Low Dk and Low

loss Hardener

Low Dk & Df Inorganic

Filler

Low Dk & Df Inorganic

Filler

Low Dk & Low Df

Thermosetting resin

Low Dk & Low Df

Thermosetting resin

Low Profile Cu

Low Profile Cu

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Contents

1. Development of New Low Dk/Df Materials

- Background of Development

- Strategy of New Resin System

2. Characteristics of New Materials

- Products Line-up

- Properties- Properties

- Transmission loss

- Reliability of New materials

3. Summary and Development Plan

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Line Up of High Performance Laminates

Scope by CISCO

(@10GHz, RTF)Product

FeaturesComment

Dk @1GHz Df @1GHz Tg () Td* ()

LeadfreeHigh Loss DS-7409S (F) 4.3 0.0170 > 170 > 340 Mass Prod.

Standard loss DS-7409D 3.9 0.0100 > 170 > 360 Mass Prod.

Lead-free

Middle Loss

(0.010~

0.015)

DS-7409D (X) 3.8 0.0040 > 185 > 360 Mass Prod.

DS-7409D (XN) 3.6 0.0035 > 185 > 360 Mass Prod.

* All products are compatible for lead-free solder process

Halogen

free

Standard Loss DS-7402H 4.4 0.012 > 170 > 380 Mass Prod.

Middle Loss DS-7402D (X) 3.8 0.004 > 170 > 380Under

Developing

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free Low loss

(0.005~

0.010)

DS-7409D (V) 3.65 0.0015 > 170 > 380Under

Evaluation

Ultra Low loss

(≤0.005) DS-7409D (VN) 3.35 0.0010 > 170 > 380Under

Evaluation

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General Properties of New material

Condition UnitNew MaterialDS-7409D (V)

DS-7409D (ZN) DS-7409D (X)

Glass Type E SI(Low Dk) SI(Low Dk) E

Peel StrengthRTF(1 Oz)

kgf/cm> 0.85 > 0.85 0.95 0.95

HVLP(1 Oz) > 0.75 > 0.75 0.85 0.95

z-CTE, α1 TMA ppm/ 45 45 40 40

Z-axis Expansion

50-260 % 2.8 2.8 2.5 2.5

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Expansion

Dk (R/C 50%)1 GHz

(IPC TM 650 2.5.5.9)3.65 3.35 3.6 3.8

Df (R/C 50%)

1 GHz(IPC TM 650 2.5.5.9)

0.0015 0.0010 0.0025 0.005

10 GHz(SPDR)

0.0045 0.0025 0.0058 0.0088

Tg DSC 180 180 175 190

DecompositionTemperature

TGA 385 385 370 380

T-288 With Cu, IPC Min. >120 >120 >60 >60

inflammability UL94V-0

(Halogen)V-0

(Halogen)V-0

(Halogen)V-0

(Halogen)

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Resin system and Frequency dependency

Measurement Method

SPDR : Split Post Dielectric Resonator

Vector Network Analyzer

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3.5

3.6

3.7

3.8

3.9

4

4.1

4.2

4.3

0 2 4 6 8 10 12

P6

DV

DZNE

DX

0

0.001

0.002

0.003

0.004

0.005

0.006

0.007

0.008

0.009

0.01

0 2 4 6 8 10 12

P6

DV

DZNE

DX

Dk Df

Frequency, GHz Frequency, GHz

BM

BM

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Dk & Df vs. Temperature

Measurement Method

Impedance Analyzer @ 1 GHz

4.20Dk 09DV

0.0150 Df 09DV

Dk Df

12

3.20

3.40

3.60

3.80

4.00

15 25 35 45 55 65 75 85 95 105

Dk 09DV

Dk D(ZN)

Dk BM

0.0000

0.0025

0.0050

0.0075

0.0100

0.0125

15 25 35 45 55 65 75 85 95 105

Df 09DV

Df D(ZN)

Df BM

Temp., Temp.,

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Cu Peel strength by Cu Foil type

Copper foil P/S (kgf/cm)

09D (V)

HTE (STD) 1.15~1.20

RTF (1) 0.90~0.95

- Test Method : IPC-TM-650-2.4.8, Condition B

- Copper thickness : 1oz

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09D (V) RTF (1) 0.90~0.95

HVLP 0.88~0.90

09D (X)

RTF (1) 0.94~0.97

RTF (2) 0.95~0.99

HVLP 0.90~0.94

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Resin system & Moisture absorption

Wat

er A

bsor

ptio

n (w

t%)

1.0 mm declad Laminate, #2116 PCT (121/ 2 atm)

0.30%

0.40%

0.50%

DS-7409SF (High Tg)

DS-7409DX (Low Loss)

DS-7409DZN (Ulta Low Loss)

DS-7409DV (Ulta Low loss)

Wat

er A

bsor

ptio

n (w

t%)

Time (hr)

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-0.10%

0.00%

0.10%

0.20%

0 1 2 3 4 5

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Transmission Loss of New material

Measurement MethodMeasurement Method

Stripline TV using a network analyzer (Stripline S-parameter Sweep Test Method)Zo : 50Ω,, Trace thickness : 1 OzTrace Length : 16 inchExtraction of Df : C comp. Software Version 1.0 at 10 GHz

Dielectric loss tangent (Df) @10 GHzDielectric loss tangent (Df) @10 GHz

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Dfa RTF Mode

RTF (1) HVLP (1) HVLP (2)

DX (E Glass) 0.0097 0.0088 0.0087

DV (E Glass) 0.0052 0.0044 0.0047

DV (SI Glass) 0.0035 0.0032 -

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Transmission Loss by Resin system & Glass Type(Dielectric Loss)

-8.0

-6.0

-4.0

-2.0

0.0

DX RTF (1) DX RTF (1) DX RTF (1) DX RTF (1)

DV RTF (1)DV RTF (1)DV RTF (1)DV RTF (1)

DV(SI Glass) RTF (1) DV(SI Glass) RTF (1) DV(SI Glass) RTF (1) DV(SI Glass) RTF (1)

S21

(dB

)

16

-20.0

-18.0

-16.0

-14.0

-12.0

-10.0

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

S21

(dB

)

Frequency(GHz)

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Comparison of Glass fabric

CompositionE-glass

(Normal)

Low Dk/Df

NE-glass

NTB

L-glass

AGY

SiO2 52-56 52-56 52~56

CaO 15-25 0-10 4-8

Al2O3 12-16 12-16 11-16

B2O3 8-13 15-20 20-30

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B2O3 8-13 15-20 20-30

MgO 0-6 0-5 0

Na2O, K2O 0-1 0-1 -

Dk @10GHz(Supplier’s Data)

6.7 4.7 4.86

Df @10GHz 0.006 0.004 0.005

Issue -

Higher Price

Hollow fiber (CAF)

Higher moisture absorption

Line-Up

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Standard RTF HVLP 1 HVLP 2

Surface

Transmission Loss by Cu Foil Maker or Type(Conductor Loss)

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X-Section

Rz

(, AFM)7.3 3.5 2.3 1.9

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Thermal Resistance of New Material- Reflow Simulation

Reflow test 260, 10 cycle (As-ls)

- PCB : 28 layers, 2 Oz Cu in center, 3.2 T, made by a sample PCB shop- PTH: Hole 0.25Φ, Pitch 1.0 mm

- No abnormality is observed from the test sample.

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Thermal Resistance of New Material_ Solder Float cycling @288

Soldering Test at 288, 6 cycle

- PCB : 28 layers, 2 Oz Cu in center, 3.2 T, made by a sample PCB shop- PTH: Hole 0.25Φ, Pitch 1.0 mm

- No abnormality is observed from the test sample.

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Summary

Feature and Status

Excellent loss tangent@10GHz : 0.0062~0.032 Good Thermal-mechanical Properties Excellent Thermal Reliability of High-layer PCB Good Processability SI Test - On Evaluation by a OEM

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Ongoing and Future works

More severe Reliability Long Term Reliability test (CAF, ATC, etc) PWB Processability(ENIG, PSR) Development of a halogen-free material having lower dielectric properties

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Thank youThank you