2011 International Semiconductor

Device Research Symposium

(ISDRS 2011)

College Park, Maryland, USA

7-9December 2011

I EE IE IE IEEE Catalog Number: CFP11511-PRT

ISBN: 978-1-4577-1755-0

TABLE OF CONTENTS

WPl: NANOELECTRONICS I: NOVEL DEVICES

Principles of Operation for a Fast, Low-Voltage Digital Switch 1

Thomas N. Theis

Modified RCA Clean Transfer of Graphene and All-carbon Electronic Devices Fabrication 2

Xuelei Liang, Brent A. Sperling, Irene Calizo, Guangjun Cheng, Christina A. Hacker, Qin Zhang, YawS. Obeng,Kai Yan, HailinPeng, Angela R. Hight Walker, Curt A. Richter

A Tunneling Field-Effect Transistor Using Side Metal Gate/High-k material for Low Power

Application ; 4

Hyun Woo Kim, Jung HanLee, WandongKim, Min-ChulSun, Jang Hyun Kim, Garam Kim, Kyung- Wan Kim,

Hyungjin Kim, Joo YunSeo, Byimg-Gook Park

Four -State FETs Incorporating Quantum Dot Gate (QDG), Quantum Dot Channel (QDC) and

Spatial Wavefunction-Switched (SWS) Structures: Basis for 2-bit Processing Circuit Architectures 6

F. Jain, K. Baskar, S. Karmakar, P-Y. Chan, E. Suarez, B. Miller, J. Chandy, E. Heller

Silicon-Compatible Bulk-Type Compound Junctionless Field-Effect Transistor 8

Seongjae Cho, Se HwanPark, Byung-Gook Park, James S. Harris Jr.

Giant Injection ofTwo-Dimensional Electron Gas 10

Alexander Dmitriev, M, Shur

WP2: WIDE BANDGAP I: UV EMITTERS

Towards Sub-300 nm Laser Diodes on Bulk AIN Substrates 11

T. Wunderer, C. L. Chua, J. E, Northrup, Z. Yanga, N. M. Johnson, M. Kneissl, G. A. Garrett, H. Shen, M.

Wraback, B. Moody, H. S. Craft, R. Schlesser, R. F. Dalmau, Z. Sitar

Single-chip 260 nm Pseudomorphic Ultraviolet Light Emitting Diode Emitting over 200 mW OutputPower 13

Leo J. Schowalter, James R. Grandusky, Jianfeng (Jeff) Chen, Mark C. Mendrick, Shawn R. Gibb

Deep UV LEDs 14

Remis Gaska

Enhanced Photon Extraction Efficiency in 260nm Pseudomorphic AIN-based Ultraviolet Light

Emitting Diodes , 15

Jianfeng (Jeff) Chen, Jamey R. Grandusky, Mark C. Mendrick, Shawn Gibb, Yang-Sung Kim, Shawn-Yu Lin, Lea J.

Schowalter

WP3: OXIDES AND DIELECTRICS

First Principles Computational Studies ofHigh-k Dielectric Stacks for Next Generation Transistors 17

R. Ramprasad, H. Zhu, C. Tang

Improvement of Polycrystalline Silicon Thin-Film Transistors with Nickel-Titanium Oxide by Sol-Gel

Spin-Coating and Nitrogen Implantation 19

Shih-Chieh Wu, Tou-Hung Hon, Shiow-Huey Chuang, Tien-Sheng Chao, Tan-Fu Lei

Electrical Characteristics of SiGe MOSFETs Integrated with Tantalum or Titanium OxynitrideHigher-k Gate Dielectrics 21

Chen-Chien Li, Kuei-Shu Chang-Liao, Chung-Hao Fu, Te-Hsuen Tzeng, Tien-Ka Wang, Wen-Fa Tsai, Chi-FongAi

A 0.7 nm EOT and Low Gate Leakage Current for MOS Device with WHf02/Hf Higher-k GateDielectric 23

Hao-Zhi Hong, Kuei-Shu Chang-Liao, Chung-Hao Fu, Chen-Chien Li, Ya-Yin Hsu, Tien-Ko Wang

Effects of Oxygen Content and Capping Metal Layer on Bipolar Switching Properties of Hf02-BasedResistive Random Access Memory Devices 25

Chen-Chien Li, Kuei-Shu Chang-Liao, Ying-Chan Chen, Chung-Hao Fit, Li-Jung Liu, Tien-Ko Wang

Improved Characteristics ofCharge-trapping Flash Device with Tunneling Layer Formed by Low

Temperature Nitrogen-Rich SiN/Si02 Stack 27

Chun-Yuan Chen, Kuei-Shu Chang-Liao, Ji-JanHo, Tien-Ko Wang

WP4: PHOTOVOLTAICS/ELECTRONICS FOR ENERGY

Modeling of Thermal Conductivity and Thermoelectric Power Factor in Ultrathin SOI

Nanomembranes and Silicon Nanowires 29

Zlatan Aksamija, I. Knezevic, E. Ramayya

3-D Simulation of Electronic and Ionic Transport in PEFC Cathodes 30

Soumak Mookherjee, P. Andrei, W. Zhu, J. Zheng

A Large-area, LED-based Spectral Response Measurement System for Solar PV Device

Characterization 31

Behrang Hamadani, J. Roller, H. Yoon, B. Dougherty

Short-circuit Current Enhancement in p-i-n GaAs/Ge Solar Cells with Tuned Superlattices,Embedded in the Mid-region 32

Argyrios C. Varonides

Benchmarking Admittance Spectroscopy Methodologies for Solar Cell Characterization 34

Dionisis Berdebes, Jim Moore, Xufeng Wang, Mark Lundstrom

Detecting Free Carriers in Organic Photovoltaic Systems: Time-Resolved Microwave Conductivity 36

Garry Rumbles, N. Kopidakis, D. Coffey, A. Ferguson, S. Dayal, 0, Reid

WP5: OPTICS AND OPTOELECTRONICS

Negative Electromagnetic Radiation Pressure on Left-Handed Dissipative Media 38

H. J. Lezec, A. K. Agrawal, M. Abashin, K. J. Chau

Low Photon Nonlinear Effects in Integrated Photonic Crystal Cavities Coupled to Quantum Dots 39

Ranojoy Base, Deepak Sridharan. HyochulKim, Glenn S. Solomon, Edo Waks

Overcoming Auger Recombination in Nanocrystal Quantum Dots Using Purccll Enhancement 41

Shilpi Gupta, Edo Waks

Selective Coupling of Quantum Dot Exciton Spin States to a Photonic Crystal Cavity Using MagneticField Tuning 43

Hyochul Kim, Thomas C. Shen, Deepak Sridharan, Glenn Solomon, Edo Waks

Ultrafast Control ofElectron Spin in a Quantum Dot Using Geometric Phase 45

V. S, Malinovsky, S. Rudin

Novel Theory on the Operation of Bipolar Junction Transistor Using Internal Photovoltaic Effect

Model 47

Kensho Okamoto

WP6: NANOELECTRONICSII: 2D MATERIALS AND MEMORY

Wafer-Scale Graphene Technology and GHz Nanoelectronics (Invited) 49

Deji Akinwande, Kristen N. Parrish, Michael E. Ramon, Li Tao, Sanjay Banerjee

Low-IRESET Unipolar Hf02 RRAM and Tunable Resistive-Switching Mode via Interface

Engineering 51

Kuan-Liang Lin, Tito-HungHou, Yao-Jen Lee, Jun-HungLin, Jhe-Wei Chang, Mann Shieh, Cheng-Tung Chou,

Wen-Hshmg Chang, Wen-Yaeh Jang, Chen-HsiLin

Uniformity Improvement by Optimization of Switching Interface in Bi-Iayer Unipolar RRAMStructure for Low Power New Memory Application 53

Kyung-ChangRyoo, Jeong-Hoon Oh, Sunghim Jung, SungjunKim, Byung-GookPark

Vertical-Channel STacked ARray (VCSTAR) for 3D NAND Flash Memory 55

Yoon Kim, SeHwan Park, WandongKim, Joo Yon Seo, Byung-GookPark

A High-Density SRAM Design Technique Using Silicon Nanowire FETs 57

Yi-Bo Liao, Meng-Hsaeh Chiang, Keunwoo Kim, Wei-Chou Hsu

Single Layer MoS2 Band Structure and Transport 59

MehdiSalmani-Jelodara, Yaohua Tana, Gerhard Klimeck

WP7: WIDE BANDGAP II: NITRIDE OPTOELECTRONICS

Challenges and Approaches of Fabricating GaN-based Green Lasers 61

Dmitry S. Sizov, Rajaram Bhat, Chung-En Zah

Failure Modes and Effects Criticality Analysis and Accelerated Life Testing of LEDs for Medical

Applications , 63

M. Sawant, A. Chrislou

Optical Studies of Strained InGaN/GaN Quantum Structures Implanted with Europium for Red

Light Emitting Diodes 65

J. Wang, W. Jadwisienczak, M. A. Ebdah, M. E, Kordesch, A. Anders

Improved THz Emission in c-plane InGaN due to Polarization Charges at the InGaN/GaN Interface 66

Nathaniel Woodward, Chad Gallinat, Grace Metcalfe, Hongen Shen, Michael Wraback

Nitride THz GaN Quantum Cascade Lasers 68

Hungchi Chou, Mehdi Anwar, Tariq Manzur, John Zellei; AshokK. Sood

Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated

Temperature 70

Dmitri Osintsev, Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr

WP8: OXIDES AND DIELECTRICS II

Higher-k Dielectrics and Conductive Oxide Electrodes for Next Generation DRAMs with a DesignRule of<20 nm 72

Jeong Hwan Han, Woongkyu Lee, Sang Woon Lee, CheolSeong Hwang

Characterization and Resistive Switching Properties of Solution-Processed Hf02, HfSiQj, and ZrSi04Thin Films on Rigid and Flexible Substrates 74

J. L. Tedesco, W. Zheng, 0, A. Kirillov, S. Pookpanratana, H.-J. Jang, P. P. Kavuri, N. V. Nguyen, C, A. Richter

Properties and Challenges of Scaled Resistive Memory 76

Seann M, Bishop, Benjamin D. Briggs, Kevin D. Leedy, HassaBakhru, Nathaniel C. Cady

Analysis of Nonpolar Resistive Switching Exhibited by Al/CuxO/Cu Memristive Devices Created via

Room Temperature Plasma Oxidation 78

N. R. McDonald, S. M. Bishop, B. D. Briggs, J. E. Van Nostrand, N. C. Cady

Comparison of HfOx-Based Resistive Memory Devices with Crystalline and Amorphous Active

Layers 80

Benjamin D. Briggs, Seann M. Bishop, Jihan 0, Capulang, Mike Q. Hovish, RichardJ. Matyi, Nathaniel C. Cady

Effects of Triple Blocking Layers on Operation Performance in Charge-trapping Flash Devices 82

Zong-Hao Ye, Kuei-Shu Chang-Liao, Jeng-Lin Tsai, Tien-Ko Wang

WP9: ORGANIC MATERIALS ANDDEVICES

Untangling the Essence of Bulk Heterostructure Organic Solar Cells: Why Complex Need not be

Complicated 84

MuhammadA. Alam, Biswajit Ray, MohammadRyyan Khan

A Monolithically Integrated Active Matrix Microphone Incorporating Local Sensing, Switching, and

Amplification 86

Yu-Jen Hsu, Ioannis Kymissis

Influence of Interfacial Chemistry and Molecular Length on the Electronic Properties ofMetal-

Molecule- Silicon Junctions Produced by Flip Chip Lamination 88

Michael A. Walsh, Mariana Coll-Batt. Benjamin Jones, Curt A. Richter, ChristinaA. Hacker

Tuning the Microstructure and Electronic Performance in Organic Thin-Film Transistors UsingChemical Modifications at Interfaces 90

Jeremy W. Ward, Eric Chapman, Marsha A. Loth, Joe Kline, Mariana Coll, John E. Anthony, Timo Thonhauser,Oana D. Jwchescu

WP10: NOVELDEVICES I

CMOS-Integrated Memristors for Neuromorphic Architectures 91

Dana Wheeler, Kuk-Hwan Kim, Siddharth Gaha, Eason Wang, Sam Kim, Irma Valles, James Li, YakovRoytei;Jose Cntz-Albrecht, TahirHussain, Wei Lit, Narayan Srinivasa

Fabrication of Segmented-ChannelMOSFETs for Reduced Short-Channel Effects 93

Byron Ho, Xin Sun, Nuo Xu, Takuji Sako, Kaoru Maekawa, Masayuki Tomoyasu, YasushiAkasaka, Tsu-Jae KingLiu

Novel MOSFET Structure using p-n Junction Gate for Ultra-low Subthreshold-Swing 95

Garam Kim, Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, JangHyun Kim, Euy Hwan Park, Hyungjin Kim,

Byung-GookPark

Phase-Change Memory on Thin-Film-Transistor Technology 97

Lin Li, Lining Zhang, Jin He, Mcmsun Chan

Impact of Electrolyte Deposition Technique on Resistive Pt/Ta205/Cu Switch Performance 99

Pragya Shrestha, Mohini Verma, YuhongKang, Kin P. Cheung, HelmutBaumgart, Marius Orlowski

WP11: POSTER SESSION

WP11-01-NANOELECTRONICS

A Combinational Logic Optimization for Majority Gate-Based Nanoelectronic Circuits Based on GA 101

A. Roohi, M. Kamrani, S. Sayedsalehi, K. Navi

Gate-Induced Drain Leakage Current ofMOSFET with Junction Doping Dependence 103

Hyunho Park, Byoimgdeog Choi

Analysis of Output Transconductance of FinFETs Incorporating Quantum Mechanical and

Temperature Effects with 3D Temperature Distribution 105

Md. RakibulKarim Akanda, Quazi D. M. Khosru

Investigation of Vertical Type Single-Electron Transistor with Sidewall Spacer Quantum Dot 107

Kyung-Wan Kim, Jung Han Lee, Kwon-Chil Kang, Hyun Woo Kim, Joo Yun Seo, Wandong Kim, Byung-Gook Park

Investigation of Self Boosting Disturbance Induced by Channel Coupling in 3D Stacked NAND Flash

Memory 109

Wandong Kim, Yoon Kim, Se-Hwan Park, Joo Yun Seo, Do-Bin Kim, Seung-Hyun Kim, Byung-Gook Park

Heterojunction-A Comprative Study Ill

VijayK. Lamba, Derick Engles, Munish Verma

Enhancement of Field Emission of Carbon Nanotubes Arrays Formed by Self-Assembled

Microspheres 113

PengZhao, HongpingZhao

Effects of Interface Roughness Scattering on RF Performance ofNanowire Transistors,..115

5. Kim, S. R. Mehrotra, M. Luisier, T. B. Boykin, G. Klimeck

Immobilization of Proteins on Semiconductor Nanowires for Biosensor Development 117

Elissa H. Williams, Albert Davydov, Sergiy Kiylyuk, Nancy Lin, Krislen Sleffens, Kris Berlness, Yaroslav Koshka,Vladimir Oleshko, John A, Schreifels, Mulpuri V. Rao

WP11-02-WIDE BANDGAP DEVICES

Characteristics ofAIGaN/GaN Heterostructure Field Effect Transistor Grown on 4 Inch Si (111)Substrate Using Formation of Dot-like AlSixCr.x Interlayer 119

Jae-Hoon Lee, Young-Sung Kwak, Jae-Hyun Jeong, Wan-TaeLim, Heon-BokLee, Jong-Kyu Ryu, Seung-Bae Hur,

Ki-SeKim, Ki-Won Kim, Dong-SeokKim, Jung-Hee Lee

Dependence of Self-Heating Effect on Passivation Layer in AIGaN/GaN HEMT Device 121

A. Haghshenas, M. Fathipour, A. Mojab

Nano-dimensional Structures of 3C-SiC Formed from Rice Husk 123

EdwardP. Gorzkowski, S. B. Qadri, B, B. Rath, S, K. Singh

The Effect of Different Passivations on Near Interface Trap Density of 4H-SiC/Si02 Structures 124

S. Salemi, A. Akturk, S. Potbhare, A. Lelis, N. Goldsman

Realization of Vertically-aligned GaN n-p Core-shell Nanoscale Structures Using Top-downFabrication 126

Dipak Paramanik, Geetha Aluri, Sergiy Krylyuk, Abhishek Motayed, MatthewKing, Sean McLaughlin, Shalini

Gupta, Harlan Cramer, Albert V. Davydov, Babak Nikoobakht

Trap Analysis in AIGaN/GaN HEMTs Using Indirect and Direct Methods 128

P. B. Shah, R. Dedhia, R. Tompkins, E. Viveiros, K. A. Jones

Realization of n-ZnO:Ga / p-ZnO:GaP Homojunction by RF Magnetron Sputtering 130

S. Gowrishankar, L, Balakrishnan, T. Balasubramanian, N. Gopalakrishnan

Photonic Devices Properties of Zinc Nitride Film Produced by Reactive Magnetron Sputtering .132

Ting Wen, Ahalapiiiya H. Jayatissa

Manufacturability of High Power Ultraviolet-C Light Emitting Diodes on Bulk Aluminum Nitride

Substrates 134

James R Grandusky, Zhibai Zhong, Jasson Chen, Charles Leung, Leo J. Schowalter

Absorption in Biased AljGa^N/GaN Quantum Wells 136

Hungchi Chou, MehdiAnwar, Tariq Manzur, John Zellei; AshokK. Sood

Photosensitivity Analysis of n-ZnO/p-SiC Heterojunction Structures 138

Ji-Chul Jung, Min-SeokKang, Ji-Hong Kim, Jin-Woo Lee, Byung-Moo Moon, Sang-Mo Koo

Investigation of a High Temperature Oxide-Trap Activation Model for SiC Power MOSFETs 140

Ronald Green, Aivars Lelis, Daniel Habersat, Mooro El

WP11-03-LOW POWER ELECTRONICS

An N-Channel Graded-Junction Lateral Diffused MOS Transistor in 0.18um Low-Power LogicCMOS Process 142

Yang Liu, Bin Wang, Huaqiang Wit

Ballistic and High Field Transport in a Nano-MOSFET 144

MunawarA Riyadi, Vijay K. Arora

Ultra-Compact Low-Power ICO/VCO Circuits with Double Gate MOSFETs 146

SoumyasantaLaha, Kushal C. Wijesundara, Anish Kulkarni, Savas Kaya

WP11-04-ELECTRONICS FOR ENERGY/PHOTOVOLTAICS

Antenna-Coupled Dual Band RF Energy Harvester Design 148

Bo Li, Xi Shao, Negin Shahshahan, Neil Goldsman, Thomas S. Salter, George M. Melze

A Planar Dual-Band Antenna Design for RF Energy Harvesting Applications 150

Xi Shao, Bo Li, Negin Shahshahan, Neil Goldsman, Thomas S. Salter, George M. Metze

Design of Radio Frequency Energy Harvesting System for an Unmanned Airplane 152

Wei Zhao, Kwangsik Choi, Zeynep Dilii, Scott Bauinan, Thomas Salter, MartinPeckerar

An Analytical Model to Characterize the Input Stage of a MOSFET Based RF Energy Harvester for

Improved Impedance Matching 154

Negin Shahshahan, Xi Shao, Bo Li, Neil Goldsman, Thomas S. Salter, George M. Metze

Fabrication Methodology for Nanostructured Hybrid Organic/Inorganic Photovoltaic Devices

Formed with Alternating Sacrificial Spacers in a Nested Nanotube Configuration 156

P. M, BolandJr., D. Gu, G. Namkoong, H. Baumgart

Fabrication and Characteristics of Vertical Type Organic Transistor Using Indenofluorenedione

Derivatives as a n Type Active Layer 158

Tae YeonLee, Dae Young Jung, Se Young Oh

Improvement in the Performance of P3HT:PCBM Based Organic Photovoltaic Cell UsingDMDCNQI as n Type Dopant and Buffer Layer 160

Joo Hyimg Lee, Eui Yeol Yang, Se Young Oh

Process Engineering to Avoid Epitaxy at a-Si:H/c-Si Interface for Heterojunction Silicon Solar Cells 162

Shahaji More, Pradip Cliaudhari, R, O. Dusane

Polarization Enhanced Tunnel Junctions in Tandem Solar Cells 164

Shuai Zhou, RandyP. Tompkins, Kenneth A. Jones, Chad Gallinal, Paul Rotella Jr., Craig Moe, Michael Wraback

Metal-Oxide Coaxial Nanowire Photovoltaic Cells 165

Dante F. Demeo, Samuel Macnaughton, Sameer Sonkusale, Thomas E. Vanden'elde

Effects of Texturing on the CV Analysis of Silicon Solar Cells 167

Xufeng Wang, James Moore, Dionisis Berdebes, Mark Lundstrom

WP11-05-MODELING

New Latch-up Model for Deep Sub-micron Integrated Circuit 169

Pan Don, Long Fan, Suge Yue, Hongchao Zheng, ShoitgangDu

A Parameter Extraction Method Based on Particle Swarm Optimization 170

Xue Zheng, Guohe Zhang, Kebin Chen

A Physical Model for Scaling and Optimizing Layers Structure ofInGaAs/InP Double HeterojunctionBipolar Transistors Based on Hydrodynamic Simulation 172

Ji Ge, Hong-Gang Liu, Yu-Xiong Cao, Yong-Bo Su, ZhiJin

A Quantum Mechanical Treatment ofLow Frequency Noise in Scaled NMOS Transistors 174

Xiaochen Zhang, Marvin H. White

A Hybrid Neural Network-Based Behavioral Model of Microwave Active Components 176

M. A. Reece, B. Davie, C. Waiyaki, E. Viveiros

Waveguide Detection of Radiation from a Random Sheet ofNanowires 178

Frank J. Crowne, Glen Birdwell, Terrance 0'Regan

WP11-06-OXIDES AND DIELECTRICS

Energy Band Diagram of Metal-Oxide-Semiconductor Capacitor with HILaTaO/HfSiO Stacked

High-k Dielectric 179

Chin-Lung Cheng, Kuei-Shu Chang-Liao

GIDL and F-N Tunneling Current Correction on Charge Pumping Techniques for Profiling Traps in

High-k Gated MOSFETs 181

Chun-Chang Lu, Kuei-Shu Chang-Liao, Fu-Huan Tsai, Che-Hao Tsao, Tien-Ko Wang, Fu-ChungHou, Yao-TungHsu

Optimisation and Scaling of Interfacial GeOj Layers for High-Gate Stacks on Germanium and

Extraction of Dielectric Constant ofGe02 183

S. N. AH Murad, D. W. McNeill. S. J. N. Mitchell, B. M. Armstrong, M. Modreanu, G. Hughes, R. K. Chellappan

Low Loss and High Tuning Barium Strontium Titanate (BST) Thin Films 185

Richard Ftt

WP11-07-NOVEL DEVICES

Temperature Impact on Double Gate nTFET Ambipolar Behavior 187

M. D. V. Martino, P. G. D. Agopian, S. G. Santos Filhos, J. A. Martino

Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions 189

Alexander Makarov, Viktor Sverdlov, Dmitri Osintsev, SiegfriedSelberherr

A Novel Dual-Control-Gate Floating Gate Transistor Used in VCO Application 191

A. Marzaki, V. Bidal, R. Laffont, W. Rahajandraibe, J-M. Portal, E, Bergeret, R. Bouchakour

Modeling of Thermoelectric Effects in Phase Change Memory Cells 193

Faruk Dirisaglik, Gokhan Bakan, AH Gokirmak, Helena Silva

A Novel Doping-Iess Bipolar Transistor with Schottky Collector 195

Kanika Nadda, M. Jagadesh Kumar

WP11-08-OPTICS ANDOPTOELECTRONICS

High Performance Dual-band Long-wave Infrared Focal Plane Array based on Type-II InAs/GaSb

Superlattices 197

EdwardKwei-Wei Huang, Abbas Haddadi, Guanxi Chen, Binh-Minh Nguyen, Minh-Anh Hoang, RyanMcClin/ock, Manijeh Razeghi

An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures 199

M. H. Liao, L. C. Chang

Progress Toward 3-5(xm Strained Quantum Cascade Laser Design Using Quasi-Phased Matched Non¬

linear Conversion on GaAs (lll)B 201

David W. Mueller, Gregcny Triplet!

WP11-09-PROCESSING TECHNOLOGY

Characterization of Size-controlled ZnO Nanorods Produced by Electrochemical DepositionTechnique 203

N. Orhan, M. C. Baykul

Fabrication and Characterization of Size-controlled CdS Nanostructures by a Modified Chemical

Bath Deposition Method 204

M. C. Baykul, N. Orhan

Local Stress Determination in Shallow Trench Insulator Structures with One-side and Two-sides Pad-

SiN Layer by Polarized Micro-Raman Spectroscopy Extraction and Mechanical Modelization 205

M. H, Liao, L. C. Chang

Study of22/20nm Tri-Gate Transistors Compatible in a Low-Cost Hybrid FinFET/Planar CMOSProcess 207

T. Baldauf, A. Wei, R. Illgen, S. Flachowsky, T. Herrmann, J. Hontschel, M. Horstmann, W. Klix, R. Stenzel

A New EOT Shrinking Mechanism in TiN/HfLaON HKMG MOSFET: Experimental and Ab-initio

Study 209

Q. Liang, Q. X. Xu, G. B. Xu, H. C. Zhong, H. L. Zhu, J. F. Li, C. Zhao, J. Yan, D. P. Chen, T. C. Ye

Silicidation Using Nickel and Dysprosium Stack on Si(100): NiSi2 Formation and Impact on SchottkyBarrier Height 211

Phyllis Shi Ya him, Qian Zhou, Dongzhi Chi, Yee-Chia Yeo

Quantum Modeling ofElectron Confinement in Double Triangular Quantum Well Formed in

Nanoscale Symmetric Double-Gate InAlAs/InGaAs/lnPHEMT 213

Jyotika Jogi, Neha Verma, Mridula Gupta, R. S Gupta

The Impact of Process Parameter Variations on the Electrical Characteristics of a RESURF LDMOS

and its Compact Modeling 215

V. Fathipour, A, Mojab, M. A, Malakoutian, S. Fathipour, M. Fathipour

Characteristics Optimizing of LDMOS Devices with Advanced-RESURF 217

Sh. Shahbazi, M. Fathipour

WP11-10-RELIABILITY

Non Volatile Memory Reliability Prediction based on Oxide Defect Generation Rate during Stress

and Retention Tests 219

Hassen Aziza, J-Michel Portal, JeremyPlantier, Christine Reliaud, Arnaud Regnier, J-Luc Ogier

Dependence of 1/f Noise Characteristics of NMOSFETs on Body Bias and Temperature in Sub¬

threshold Region 221

Sung-Kyu Kwon, Ho-Young Kwak, Hyuk-Min Kwon, Jae-HyungJang, Yi-JungJung, Sang-Su Kim, Da-Soon Lee,

Jong-Kon Lee, Song-Joe Lee, Hi-DeokLee

An Introduction to the Evaluation of the Effects ofHigh Power Microwave Signals on SignalingSystems 223

Zeynep Dilli, Niittiiya Seekhao, John C, RodgersAn Analytical Model for MOSFET Local Oxide Capacitance 225

/. Starkov, A. Starkov, S. Tyaginov, H. Enichlmair, H. Ceric, T. Grosser

Statistical Vulnerability Analysis to Study Intra-chip Coupling of High Power Microwave Signals 227

Zeynep Dilli, Ronald Curley, Akin Akturk, Neil Goldsman

Stress Relaxation Behavior and Low Cycle Fatigue Behavior of Bulk SAC 305 229

GaiyParadee, Aris Christou

WP11-11-ORGANIC MATERIALS

Low-Temperature Fabrication of Fully Transparent InGaZnO Thin Film Transistors with Ga-dopedZnO Source/Drain 231

J.-H. Kim, J.-W. Kim, J.-H. Roh, K.-J. Lee, K.-M. Do, J.-H. Shin, B.-M. Moon, S.-M. Koo

WP11-12-TESTING AND CHARACTERIZATION

Effect of Infrared Filter on the Electrical Characteristics of Silicon-based PIN Photo-detectors 233

H. J. Kim, B. D. Choi

Analysis of Subthreshold Characteristics of p-MOSFETs with (0/90°) and 45° Channel Orientation 235

7". Matsuda, H. Hanai, F. Asano, H. hvata, T. Ohzone

WP11-13- SIGE. GERMANIUM.AND SOI

Modeling the Floating-Body-Effcct-Related Transient Behavior of40nm PD SOI NMOS Device via

the SPICE Bipolar/MOS Model 237

S. W. Fang, J. B. Kuo, D, Chen, C. S. Yeh

A Subthreshold Swing Model for FD SOI MOSFET with Vertical Gaussian Profile 239

Kebin Chen, Guohe Zhang, Xue Zheng

Analysis and Simulation of a 45nm High-K/Metal PD-SOI DTMOS under Forward Bias 241

AbimaelJimenez, R. Amhrosio, K. Monfil, C. Martinez, J. Munoz, Z. Blanco

Ballistic Hole Injection Velocity Analysis in Ge UTB pMOSFETs: Dependence on Body Thickness,Orientation and Strain 243

Saumitra R Mehrotra, Abhijeet Paul, GerhardKlimeck

WP11-14-SENSORS. MEMS. AND NEMS

High Power CMOS Circuit with LDMOSFET 245

Chan-Soo Lee, Mimkhsuld Gendensuren, Zhi-Yuan Cui, Kie-Young Lee, Nam-SooKim

Fabrication of a MZI Device Based on Waveguides ofSiN for Biological Detection 247

Abimael Jimenez, Aurelio Heredia, Roberto C. Ambrosio, Mario Moreno, Carlos Martinez

High Performance Tunnel Field Effect Transistor with a Tri-Material-Gate Structure 249

Renrong Liang, Ning Cui, Mei Zhao, Jing Wang, Jun Xu

Single Photon Avalanche Diode in Standard CMOS 0.5um Technology 251

BoweiZhang, Qiuchen Yuan, Zhenyu Li, Mona E. Zaghloul

Hot Wire Chemical Vapor Deposited Boron Carbide Thin Film/c-silicon Diode for Neutron Detection

Application ; 253

Pradip Chaadhari, ArvindSingh, Anita Topkar, RajivDusane

Sol-gel Derived Aluminum Doped Nanocrystalline Zinc Oxide for Hydrogen Gas Sensing 255

Yue Hon, AhalapitiyaH. Jayatissa

Characterization ofPorous Nickel Oxide Base Hydrogen Gas Sensor 257

Amir MasoudSoleimanpour, Ahalapitiya H. JayatissaAmmonia Sensor Device Using Graphene Modified with Platinum 259

Madhav Gaulam, Ahalapitiya H. Jayatissa

PLENARY SESSION

Progress in Nonpolar and Semipolar GaN Materials and Devices 261

James S. Speck

Emerging Memory Devices 262

H.-S. Philip Wong

TA1: NANOELECTRONICS III

Advanced Contact and Junction Technologies for Improved Parasitic Resistance and Short Channel

Immunity in FinFETs Beyond 22nm Node 263

K.-W. Ang, B.-C. Mm, M. Gunji, P. Y, Hung, 1. Ok, M. Rodgers, D. L. Franca, S. Gausepohl, C. Hobbs, P. D.

Kitsch, R, Jammy

Physics-Based, Closed-Form DC Model for Lightly-Doped Short Channel Triple- Gate MOSFETs

Including Three-Dimensional Effects 265

Alexander Kloes, Mike Schwarz, Thomas Holtij

Denser and More Stable FinFET SRAM Using Multiple Fin Heights 267

Angada B. Sachid, ChenmingHu

Low-Frequency Noise in High-k LaLu03/TiN MOSFETs 269

Maryam Olyaei, B. GunnarMalm, Eugenia D. Litta, Per-Erik Hellstrom, Mikael Oslling

TA2: WIDE BANDGAP III: DEVICE PHYSICS AND CHARACTERIZATION

Impact of Hetero-interface on the Photoresponse of Gan/sic Separate Absorption and MultiplicationAvalanche Photodiodes , 271

Anand V. Sampath, Qiagui Zhou, Ryan Enck, ChadS, Gallinat, PaulRotellaJr., Dion Mcintosh, Paul Shen, J.

Campbell, Michael Wraback

Temperature Dependent Electroluminescence Measurement ofAIGaN-Based Ultraviolet Light-Emitting Diodes 273

Craig G. Moe, GregotyA. Garret!, Hongen Shen, Michael Wraback, Maxim Shatalov, Xuhong Hu, YuriyBilenko,

Jinwei Yang, Wenhong Sun, R. Gaska

Optoelectronic Characterization of4H-SiC Avalanche Photodiodes Operated in DC and in GeigerMode 275

M. Dandin, A. Akturk, A. Vert, S. Soloviev, P. Sandvik, S. Potbhare, N. Goldsman, P. Abshire, K. P. Cheung

Analytical Model for Ion-implanted 4H Silicon Carbide Metal-semiconductor Field-effect Transistors 277

S. G. Wang, Z. Y. Zhang

TA3: SENSORS. NEMS, AND MEMS

Integrating Biological Molecules with Electrode Surfaces for Bioanalytical Sensing Applications 279

Joseph W. F. Robertson, Vilalii Silin, Joseph E. Reiner, John J. Kasianowicz

An Electronic Microfluidic Switch Using Dielectrophoresis for Control of Microparticles 280

MehdiJavanmard, Sam Emaminejad, Robert Button, Ronald W. Davis

TA4: FLEXIBLE ELECTRONICS

Materials, Processing, and Characterization for Flexible Electronics 281

William S. Wong

A Physics ofFailure Based Qualification Process for Flexible Display Interconnect Materials 282

Thomas Martin, Arts Christou

Thin Film Transistors with Buckled Gate 284

Sanjiv Sambandan

Room Temperature Plasma Assisted Atomic Layer Deposition AI203 Film's EncapsulationApplication in Organic Light Emitting Diodes 286

RichardFu, Andrew Chen, Merric Srour, Steven Blomquist, Eric Forsythe, Jianmin Shi, DavidMorton

TA5: PROCESSING TECHNOLOGY

Pd-InGaAs as a New Self-Aligned Contact Material on InGaAs 288

Eugene Y.-J. Kong, Xingui Zhang, Ivana, Qian Zhou, Yee-Chia Yeo

Improvement of the GaSb/Al203 Interface Using a Thin InAs Surface Layer 290

A. Greene, M. Yakimov, P. Nagaiah, S. Madisetti, V. Tokranov, R. Moore, S. Oktyabrsky

Co-InGaAs as a Novel Self-Aligned Metallic Source/Drain Material for Implant-less Ino.53Gao.47As n-

MOSFETs 292

Ivana, Snjith Subramanian, Eugene Y.-J, Kong, Qian Zhou, Yee-Chia Yeo

The Fabrication ofPoly-Si MOSFETs Using Ultra-Thin High-K/Metal-Gate Stack for Monolithic 3D

Integrated Circuits Technology Applications 294

T.-H. Wu, M. H. Lee

TP1: NANOELECTRONICSIV

Study the Effect ofApplied Voltage on Propagation Delay of Bilayer Graphene Nanoribbon

Transistor 296

M. H. Ghadiry, Asrulnizam Abd Manaf, S. M. Mousavi, H. Sadeghi

Submicron Ambipolar Nanocrystalline-silicon TFTs with High-Gate Dielectrics 298

AnandSubramaniam, Kurtis D. Cantley, RichardA, Chapman, Harvey J. Stiegler, Eric M. Vogel

Ft of 100GHz for lOOnm multi-gate In0.5jGa0.45As MOSFET 300

Jiongfiong Mo, Nicolas Wichmann, Yannick Roelens, Mohamed Zaknoime, Ludovic Desplanque, Xavier Wallart,

Sylvain Bollaert

Comparison of Silicon-on-Insulator and Body-on-Insulator FinFET Based Digital Circuits with

Consideration on Self-Heating Effects 302

Peijie Feng, Prasanta Ghosh

Effect ofAnnealing Temperature on the Barrier Height of Nano-particle Embedded Ni-contacts to

4H-SSC 304

Min-SeokKang, Jung-Bo Lee, Anderson Hallen, Carl-Mikael Zetterling, Sang-Mo Koo

TP2: WIDEBANDGAP IV: WIDE BANDGAP MATERIALS FOR OPTOELECTRONICS

WBG Substrates for Devices, Progress and Trends (SiC to Ill-Nitrides Comparison) 306

Alexander L. Syrkin

Study of Conductivity Type of Undoped ZnO films Grown on n and p-type (100) Si Substrates byPulsed Laser Deposition 307

Saeed Esmaili Sardari, Andrew Berkovich, AgisA, lliadis

Fabrication of ZnO Homojunction by Al-As-N Tridoping 309

L. Balakrishnan, S. Gowrishankar, N. Gopalakrishnan

InP/ZnS Core-Shell Quantum Dots Sensitized ZnO Nanowires for Photovoltaic Devices 311

GangShen. Nicholas Harris, NabilDawahre, DavidS. Wilberl, William Baughmcm, Elmer Rivera, DavidNikles,

Tony I. Bryant, Seongsin Margaret Kim, Patrick Kung

Epitaxially Grown GaZnO Thin Films as Transparent Electrodes for 4H-SiC 313

Jung-HoLee, Ji-HongKim, Min-Seok Kang, Byung-Mao Moon, Sang-Mo Koo

TP3: SENSORS

Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing 315

Hiwa Mahmoudi, ViktorSverdlov, SiegfriedSelberherr

AIII-V Field Effect Transistor (FET) with Hafnium Oxide Gate Dielectric for the Detection of

Deoxyribonucleic Acid (DNA) Hybridization 317

Nicholas M. Fahrenkopf, Padmaja Nagaiah, Natalya Tokranova, Serge Oktyabrsky, Vadim Tokranov, MagnusBergkvist, Nathaniel C. Cady

Combined Si Schottky Barriers and SiGe/Si Multi Quantum Wells for Infrared Detection 319M. Moeen, M. Kolahdouz, M, Ostling, H. H. Radamson

Label Free Detection of Human MIG Using AIGaN/GaN High Electron Mobility Transistor 321

Fahmida Shaheen Tulip, EdwardEteshola, SyedKamrul Islam, Salwa Mostafa, Hasina F, Hug

TP4: SOI AND SIGE

2D Analytical DC Model for Nanoscale Schottky Barrier DG-MOSFETs 323

Mike Schwarz, Thomas Holtij, Alexander Kloes, Benjamin IniguezStatic and Low-Frequency Noise Characterization of Ultrathin SOI with Very Thin BOX in Pseudo-

MOSFET Configuration 325

Mike Schwarz, Thomas Holtij, Alexander Kloes, Benjamin Iniguez

Charge Pumping and DCIV Currents in SOI FinFETs 327E. X. Zhang, D. M. Fleetwood, S. A. Francis, C. X. Zhang, F. El-Mamomri, R. D. Schrimpf

Design and Analysis of Multi-Gate Field-Effect-Diodes for Embedded Memory 329Zakariae Chbili, Yang Yang, Qiliang Li, Dimitris E. loaimou

Enhanced Programming and Erasing Speeds in p-Channel Charge-trapping Flash Transistor Devices

with SiGc Channel 331

Li-JungLiu, Kuei-Shu Chang-Liao, Yi-Chuen Jian, Tien-Ko Wang, Ming-Jinn Tsai

Improvement of Thermal Stability of Ni-Germanide with Co-sputtering of Nickel and Palladium for

High Performance Ge CMOSFET 333

Hong-Sik Shin, Se-Kyung Oh, Min-Ho Kang, Jae-HyungJang, Jungwoo Oh, Prashant Majhi, Raj Jammy, Yi-Sun

Chung, Scmg-Soo Kim, Da-Soon Lee, Song-Jae Lee, Hi-DeokLee

TP5: TESTING AND CHARACTERIZATION

Performance and Reliability Investigation of (110) and (100) Sidewall Oriented MugFETs 335C. D. Young, K. Akarvardar, G. Bersuker, I. Ok, T. Ngai, K.-W, Aug, C. Hobbs, P. Kirsch, R. Jammy

Spin Dependent Charge Pumping: A New Tool for MOS Interface Characterization 336Brad C. Bittel, Patrick M. Lenahan, Jason T. Ryan, JodyFronheiser, AivarsJ. Lelis

Extended Defects that Affect Carrier Lifetime in High Blocking Voltage SiC Epilayers 338Nadeemullah A. Mahadik, Robert E, Stahlbush, Joshua D. Caldwell, Michael O'Loughlin, Albert Btirk

Characterization of NVSM Gate Stacks with 'Gridded' Capacitors 340

ChristopherJ Barthol, Marvin H. White

Band Alignment ofTFET Heterojunctions and Post Deposition Annealing Effects by Internal

Photoemission Spectroscopy 342

Qin Zhang, Gnangle Zhou, Huili G. Xing, Alan C. Seabaugh, KunXu, OlegA. Kirillov, Curt A. Richter, Nhan V.

Nguyen

Determination of Oxide Properties with a New Fast Tunneling Current Measurement Protocol 344P. Chiquat, G, Micolau, R. Laffbnt, F. Lalande, A. Regnier, B. Bouteille

TP10: RELIABILITY

Modeling the Charge Transport and Degradation in Hf02 Dielectric for Reliability Improvement and

Life-Time Predictions in Logic and Memory Devices 346

Andrea Padovcmi, LucaLarcher, Luca Vandelli, Onofrio Pirrotta, Paolo Pavan

Electrical Reliability Characteristics and Dielectrics Degradation in Gate Stacks (REO-Hf02) Grown

on the High Mobility Ge Substrates 348

Md. ShahinurRahmana, Evangelos K. Evangelou, Nikos Konofaos, Athanasios Dimoulas

Fast Extraction of Extrinsic Cells in a NVM Array After Retention Under Gate Stress •. 350

R. Djenadi, G. Micolau, J. Postel-Pellerin, R. Laffont, J. L. Ogier, F. Lalande, J. Melkonian

Characterization of A]203-HfOrAl203 Sandwiched M1M Capacitor under DC and AC Stresses 352

Ho-YoungKwak, Hyuk-Min Kwon, Sung-Kyu Kwon, Jae-Hyung Jang, Woon-U Choi, Yi-Sun Chung, Jong-KonLee, Min-Gyu him, Song-Jae Lee, Hi-DeokLee

TP6: NANQELECTRONICS V: NANOTUBES AND GRAPHENE

Tunable Transmission Gap in Graphene p-n Junction 354

Redwan N. Sajjad, Avik W, Ghosh

Charge Transfer Region at the Edge of Metal Contacts on Graphene and Its Impact on Contact

Resistance Measurement 356

Kangmu M. Lee, Atsushi Ohoka, PeterM. Asbeck

Low-Field Acoustic Phonon Limited Mobility in GNRs 358

Sahar Jalilia, Morteza Fathipoara

Incidence Angle-dependent Transport Across a Single Graphene p-n Junction 360

Surajit Sutar, Everett Comfort, Ji UugLee

Physics-Based GNRFET Compact Model for Digital Circuit Design 362

Dincer Unluer, Frank Tseng, Avik W. Ghosh

TP7: WIDE BANDGAP V: GAN/ZNO MATERIALS AND DEVICES

Ill-Nitride Devices on Si: Challenges and Opportunities 364

F. (Shadi) Shahedipow-Sandvik, M. Timgare, J. Leathersich, P. Suvarna, R. Tompkins, K, A. Jones

InGaN/GaN Microwave Varactors with High Q, High-Breakdown Voltage and High Linearity 366

Wei La, Lingquan (Dennis) Wang, Siyuan Gu, DavidP. R, Aplin, Paul K. L. Yti, Peter M. Asbeck

GaN Power Schottky Diodes Fabricated on Low Doped MOCVD Layers Grown on MultipleSubstrates 368

Randy P. Tompkins, Shuai Zhou, JoshuaR. Smith, MichaelA. Derenge, Kevin W, Kirchier, Kenneth A. Jones,

Gregoiy Mulholland, Robert Metzger, Jacob Leach, Puneet Suvarna, Mihir Tungare, Neeraj Tripathi, Fatemeh

(Shadi) Shahedipow-Sandvik

Temperature Profiling in AlGaN/GaN HEMTs with Nanocrystalline Diamond Heat Spreading Layersby Raman Spectroscopy 369

T. J. Anderson, M. j'.Tadjer, K. D. Hobart, T. I Feygelson, J. D. Caldwell, M. A. Mastro, J. K. Hite, C. R. EddyJr., F. J. Kub, J. E. Butler, B. B. Pate

ZnO Thin Film Transistors by Low Temperature Deposition Plasma-Enhanced Atomic LayerDeposition in a Showerhead Reactor 371

J. Israel Ramirez, Yaanyuan V. Li, DalongA. Zhao, Thomas N. Jackson

TP8: LOW POWER ELECTRONICS

A Novel Approach of Cap-sharing to Reduce the Big Loop Filter Capacitance in Semi-digital PLL 373

Ketan Dewan, Puneet Sareen, Markus Died

Improving SRAM Read/Write Margin with Asymmetric Halo MOSFET 375

Koji Nil, Makoto Yabuuchi, Hidehiro Fujiwara, Yasumasa Tsukamoto, KojiMaekawa, Motoshige IgarashiFabrication of Silicon Tunnel-FETs Using Epitaxial NiSi2 Schottky Junctions and Dopant SegregationTechnique 377

Shinji Migita, Hiroyuki Ota

Modulation of Transfer Characteristics of Si Nanowire Tunnel FET on Ultra-Thin-Body and BOX

(UTBB) SOI Substrate Using Back-Gate Bias 379

M.-C. Sun, S. W. Kim, G. Kim, H. W. Kim, H. Kim, J.-H. Lee, H. Shin, B.-G. Park

Experimental Study to Push the Flash Floating Gate Memories Toward Low Energy Applications 381

V. Delia Marca, A. Regnier, J.-L. Ogier, R. Simola, S. Niel, J. Postel-Pellerin, F. Lalande, G. Molas

Heterostructure Design and Demonstration of InGaSb Channel IH-V CMOS Transistors 383

Ze Yuan, Aneesh Nainani, Brian R. Bennett, J, Brad Boos, Mario G. Ancona, Krishna C. Saraswat

TP9: SIGE AND GERMANIUM

The Properties of Germanium-Tin Alloys for Infrared Device Applications 385

James Kolodzey, Matt Coppinger, SangcheolKim, Nupur Bhargava, Jay Gupta, Chaoying Ni, YungKee Yeo

Class-A Stacked SiGe HBT Power Amplifier at Millimeter-Wave 386

Thomas J. Farmer, AliDarwish, Benjamin Huebschman, Edward Viveiros, H. Alfred Hung, Mono E. Zaghloul

Ultra-Shallow Emitter Formation for Germanium Bipolar Transistor by Diffusion from

Polycrystalline Germanium 388

KezhengLi, Kok HoeKong, Harold Gamble, Mervyn Armstrong

Gei-iMnj Heteroepitaxial Quantum Dots: Growth, Structure and Magnetism 390

Joseph Kassim, Jerrold Flora, Christopher Nolph, PetraReinke, Cindi Dennis

Surface Characterization ofNickel Germanides for Schottky Source/Drain Contacts to Germanium

p-MOSFETs 391

D. R. Gajula, D. W. McNeill, B, E. Coss, H. Dong, S. Jandhyala, J. Kim, R. M. Wallace, B. M. Armstrong

Ge p-i-n Detectors on Si for High Power Density Applications 393

Anthony Davidson III, Phillip E. Thompson, Mark Twigg, J. BradBoos, Doe Park, David Tulchinsky

FA1: NANOELECTRONICS VI: NANOTUBES AND GRAPHENE

Chemical Defect Generation and Propagation on Carbon Nanotubes 395

Yuhtiang Wang

Controlling Charility and Pinhole Defects in Ni Catalyst for Synthesis of Graphene 397

Eugene Zakar, Kevin Hauri, RichardFu

An Investigation ofZGNR-Based Transistors 399

Hossein Karamitaheri, M. Pourfath, R. Faez, H, Kosina

Wafer-scale Synthesis and Transfer ofHigh Quality Monolayer Graphene for Nanoelectronics 401

Li Tao, Jongho Lee, Milo Holt, DejiAkinwande

FA2: WIDE BANDGAP VI: SIC MATERIALS AND DEVICES

Expansion of Shockley Stacking Faults in High Doped 4H-SiC Epilayers 403

Robert E. Stahlbush, NadeemuilahA. Mahadik, Eugene A. hnhoff, KarlD. Hobart, Rachael L. Myers-Ward,Charles R. Eddy Jr., D. Kurt Gaskill, Fritz J. Kub

SiC MOSFET Oxide-Trap Two-way Tunneling Model 405

Aivars Lelis, DanHabersat, Ron Green, Neil Goldsman

Using Triangular Voltage Sweep to Detect Mobile Ions in Silicon Carbide MOS 407

Daniel B. Habersat, Aivars Lelis, Ronald Green

Device Modeling Analysis and Simulation of SiC P-i-N Diode under Pulsed Power Conditions 409

Aderinto Ogunniyi, Heather O'Brien, Charles Scozzie, William Shaheen, Jon Zhang, Lin Cheng, AnantAganval,Victor Temple

Electrically Detected Magnetic Resonance Study of a Near Interface Trap in 4H SiC MOSFETs 411

Corey J. Cochrane, Patrick M. Lenahan, Aivars Lelis

The Effects of Different Silicon Carbide - Silicon Dioxide Interface Passivations on Transition RegionMobility and Transport 413

5. Salemi, A. Akturk, S. Potbhare, A. Lelis, N. Goldsman

FA3: NANOWIRES,ASSEMBLY METHODS ANDDEVICES I

Vapor-Liquid-Solid Growth and Characterization of Al-Catalyzed Si Nanowires 415

Joan M. Redwing, Yue Ke, Xin Wang, Chad Eichfeld, Xiaojun Weng, Chito E. Kendrick, Suzanne E. Mohney,Theresa S. Mayer

High-Field Carrier Velocity in Silicon Tri-Gate Nanowire pMOSFETs with <100>- and <110>-

Oriented Channel 416

Masumi Saitoh, Kensuke Ota, Chika Tanaka, Yukio Nakabayashi, Ken Uchidaa, Toshinori Ntimata

Improving the Selectivity of a Metal Oxide Nanowire Gas Sensor Using a Microhotplate/FETPlatform 418

Eric N. Datloli, Kurt D. Benkstein

Growth and Characterization ofNanowires and Nanorods on Al2O3(110), Si(lll) and SiO2/p-Si(100)by MOCVD 420

Abdiel Rivera, Mehdi Anwar, Mathiey R. Monville, Shihsheng Chang, John letter, AshokK. Sood, Tariq Manzur

Local Stressors to Accommodate 1.2 to 5.6 GPa Uniaxial Tensile Stress in Suspended Gate-All-

Around Si Nanowire nMOSFETs by Elastic Local Buckling 422

M. Najmzadeh, D. Bouvet, W. Grabinski, A. M. Ion.escu

FA4: MODELING & SIMULATION I

On-Current Limitation ofHigh-K Gate Insulator MOSFETs 424

Chun-Hsing Shih, Jhong-Sheng Wang, Nguyen Dang Chien, Ruei-Kai Shia, Yan-Xiang Luo, Shen-Li Chen,

Chenhsin Lien

A Quasi-Analytical Model of the Junctionless Nanowire Field-Effect Transistor 426

E. Gnani, S. Reggiani, A. Gnudi, G. Baccarani

Estimating and Enhancing the Yield of Tunneling SRAM Cells by Simulation 428

Dingli Zuo, Michael J. Kelly

Analytical Modeling and Simulation for Dual Metal Symmetrical Gate Stack (DMGAS)

Cylindrical/Surrounded Gate MOSFET 430

Pujarini Ghosh, Subhasis Haldar, R. S Gupta, Mridu/a Gupta

A New Compact Modeling for the Current and Drift Region Resistance in High-PerformanceLDMOS Transistors N/A

Alireza Mojab, M. Fathipour, V. Fathipour, A. Haghshenas, M. Malakoutian

FA5: NANOELECTRONICS VII: NANOTUBES AND GRAPHENE

Graphene Transistors for RF Applications: Opportunities and Challenges 434

J. S. Moon, M. Antcliffe, H. C. Seo, S. C. Lin, A. Schmitz, I. Milosavljevic, K. McCalla, D. Wong, D. K. Gaskill, P.

M. Campbell, K.-M. Lee, P. Asbeck

CVD Graphene Ubiquitous High Speed Electronics on Flexible/Rigid Substrates 436

Osama M. Nayfeh, Barbara Nichols, Tony Ivanov, Robert Proie, Greg Meissener

Graphene-based Electronics for Ubiquitous RF Communications and Sensing 438

Tomds Palacios

Optical Bio Sensor Using Graphene Nano Ribbons 439

Bhaven Mehta, Zhenyu Li, Mona Zaghloul

FA6: WIDE BANDGAP VII: III-NITRIDE HEMTS

Frequency-Configurable Electronics 441

Grigoiy Simin, Remis Gaska

Normally-Off InAlN/GaN HEMTs with n^ GaN Cap Layer: A Simulation Study 443

Stanis/av Vitanov, Jan Kuzmik, VassilPalankovski

Performance Enhancement ofAlGaN/GaN Metal-Oxide-Semiconductor Heterojunction Field-Effect

Transistor (MOSHFET) with Atomic Layer Deposition (ALD) of High-k HfAlO Gate Dielectric Layer 445

Bongmook Lee, Young-Hwan Choi, Casey Kirkpatrick, Alex Q. Huang, Veena Misra

Design and Simulation ofEnhancement-mode N-polar GaN Single-channel and Dual-channel MIS-

HEMTs 447

Peijie Feng, Koon Hoo Teo, Toshiyuki Oishi, MasatoshiNakayama, Chunjie Dttan, Jinyun Zhang

Comparative Study of E- and D-mode InAlN/AlN/GaN HEMTs with fT near 200 GHz 449

Berardi Sensale-Rodriguez, Jia Guo, Ronghua Wang, GuowangLi, Tian Fang, Paul Saunter, Andrew Ketterson,

Michael Schuette, Xiang Gao, Shiping Guo, Yu Cao, OlegLaboutin, WayneJohnson, Gregoiy Snider, Patrick Fay,Debdeep Jena, Huili (Grace) Xing

Modeling Reliability of GaN/AlGaN/AlN/GaN HEMT 451

Balaji Padmanabhan, Dragica Vasileska, Stephen. M Goodnick

FA7: NANOWIRES. ASSEMBLY METHODSAND DEVICES II

Nanowires in Energy Devices •

-: V"","" ^'""ri?Z453

P. DanielDapkm, Chun YungChi, MaoqingYao, Amy Madarm, Tingwei Yeh, YentmgLin, Chongwu Zhou

Scaling-up Charge Injection to Nanowire p-n Heterojunctions: From Individual Nanowires to their

Large Size Arrays454

BabakNikoobakht

Self-aligned Multi-channel Silicon Nanowire Field-effect Transistors 456

Hao Zhu, Qiliang Li, Hui Yuan, HelmutBaumgart, Dimitris E. loannou, Curl A. Richter

Planar VLS Grown GaAs Nanowire Array Based HEMTs 458

Xin Miao, Xiuling Li

Silicon Nanowire-Based Oscillator Achieved Through Solid-Liquid Phase Switching 460

Adam Cywar, Gokhan Bakati, Ali Gakirmak, Helena Silva

Location and Cause of Surface Potential Fluctuations in an SOI Nanowire 462

Ted Thorbeck, NeilZimmerman

FA8: MODELING AND SIMULATION II

Modeling the Capacitance-Voltage Characteristics of the Trench Insulated Gate Bipolar Transistor

(TIGBT) by Minimizing its Helmholtz Free Energy 464

Abdus Sattar, Norman Gunther, Mark Baiycza, MahmudwRahman

Modeling of a New Liner Stressor Comprising Ge2Sb2Te5 (GST): Amorphous-Crystalline Phase

Change and Stress induced in FinFET Channel 466

Ran Cheng, Yinjie Ding, Bin Liu, Yee-Chia Yeo

Source of Chaos in Radio Frequency MOSFETs 468

Myunghwan Park, John Rodgers, DanielLalhrop

DC Circuit Model of a Memristor 470

Anas Mazady, MehdiAnwar

Hydrodynamic Simulations of a NanoscaleRingFET 472

N. E. Williams, A. Gokirmak

FP1: OPTICS. OPTOELECTRONICS AND PLASMONICS

Collective Plasmon Modes in Nanoparticle Assemblies 474

Stephan Link

Deterministic Nano-manipulation and Immobilization of Single Quantum Dots 476

ChadRopp, Zachary Cummins, RolandProbst, Sanghee Nah, Sijia Qin, Rakesh Kumar, Shnivasa R. Raghavun,John T. Fourkas, Benjamin Shapiro, Edo Waks

Stable Single Mode Terahertz Semiconductor Sources at Room Temperature 478

M. Razeghi

Interface Engineering for Efficient Organic Optoelectronic Devices Using Nanostructured Transition

Metal Oxides 480

M. Vasilopoidou, I. Kostis, G. Papadimitropoulos, N. Konofaos, A. A. lliadis, P. Argilis, D, Davazoglou

Failure Analysis of THz GaAs Photoconductive Antenna by Means of High Resolution X-rayTopography 482

SyedB. Qadri, DongHo Wu, Benjamin D. Graber, N. A. Mahadik, A. Garzarella

FP2: SPACE AND EXTREME ENVIRONMENT ELECTRONICS

Multilayer, Colloidal Nanoparticle Based Devices for Biological and Nuclear Radiation Detection 483

Liqiao Qin, ChristopherShing, Shayk Sawyer

Compact Modeling of Silicon Carbide Lateral MOSFETs for Extreme Environment IntegratedCircuits 485

Avinash S, Kashyap, Cheng-Po Chen, Vinayak Tilak

Selective Nano-devices for the Detection of Nitroaromatic Explosive Compounds 487

Geetha SA/wi, Abhishek Motayed, Albert V. Davydov, Vladimir Oleshko, Kris A. Bertness, Norman A. Sanford,

Mulpuri V. Rao

FP3: NOVELDEVICES II

TaOx Memresitive Devices with Ferromagnetic Electrodes 489

Hyuk-JaeJang, Pragya Shrestha, Oleg Kirillov, Helmut Baumgart, Kin P. Cheung, Oana D. Jurchescu, Curt A.

Richter

Effects of Oblique Wave Propagation on the Nonlinear Plasma Resonance in the Two-Dimensional

Channel of the Dyakonov-Shur Detector 491

Greg Rupper, Sergey Rudin, Frank J. Crowne

Simulation Comparison of Reset Operation for Mushroom Phase Change Memory Cells with

Different Access Device 493

Azer Faraclas, Nicholas Williams, All Gokirmak, Helena Silva

Low-Temperature PEALD ZnO Double-Gate TFTs 495

Yuanyuan V. Li, J. Israel Ramirez, Haoyu U. Li, Thomas N, Jackson

Design, Simulation, and Characterization ofTHz Metamaterial Absorber 497

Lee Butler, David S. Wilbert, William Baughman, SonerBalci, Patrick Kung, Seongsin M. Kim

Ultrahigh Sensitive Plasmonic Terahertz Detector Based on an Asymmetric Dual-Grating Gate

HEMT Structure 499

Takayuki Watanabe, Stephane Boubanba Tombet, Yudai Tanimoto, Yuye Wang, Hiroaki Minamide, Hiromasa lto,

Denis Fateev, Viacheslav Popov, Dominique Coquillal, Wojciech Knap, Taiichi Otsuji

FP4: MODELING & SIMULATION III

Finite Element Modeling of Current-Induced Filaments in Nanocrystalline Silicon 501

S. Fischer, C. Osorio, N. Williams, H. Silva, A. Gokirmak

Threshold Voltage and Sub-Threshold Slope Variation with Gate-length in Al203/InAlAs/lnGaAsQW FETs 503

A. Gili, I. Tsopelas, J. P. Xanthakis

Graded Silicon-Germanium Channel Tunnel Field Effect Transistor (G-TFET), An Approach to

Increase I0N without compromising I0ff 505

Nitin Goyal, Poornendu Chaturvedi

One-Flux Theory of Saturated Drain Current in Nanoscale Transistors 507

Ting-Wei Tang, Massimo V. Fischetti, Seonghoon Jin, Nobuyuki Sano

Compact Analytical Modeling of the Gate Leakage Current Partitioning for Double Gate MOSFET

Device 509

GhaderDarbandy, Francois Lime, Antonio Cerdeira, Magali Estrada, Salvador Ivan Garduho, Benjamin Inigtiez

Author Index