1ICC Proprietary MEMS DEVICE WAFER LEVEL PACKAGING TECHNICAL PRESENTATION Customer Device Wafer.

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1 ICC Proprietary MEMS DEVICE WAFER LEVEL PACKAGING TECHNICAL PRESENTATION Customer Device Wafer

description

3ICC Proprietary TECHNICAL PROPOSAL FOR MEMS DEVICE WLP Chip 1

Transcript of 1ICC Proprietary MEMS DEVICE WAFER LEVEL PACKAGING TECHNICAL PRESENTATION Customer Device Wafer.

Page 1: 1ICC Proprietary MEMS DEVICE WAFER LEVEL PACKAGING TECHNICAL PRESENTATION Customer Device Wafer.

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MEMS DEVICE WAFER LEVEL PACKAGINGTECHNICAL PRESENTATION

Customer Device Wafer

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Process Modification Required as follows:- Reduction of Bond pads to half of existing bond pads size.

- Since bond pad size has been reduced, the distance between 2 chip isolation lines will be more now and additional scribing / dicing area can be provided for our SWP

Process Flow Changes:New smaller Bond Pads Passivation Bond Pad Opening Testing Ship Wafers to ICC

TECHNICAL PROPOSAL FOR ULTRASOUND MEMS DEVICE WLP

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TECHNICAL PROPOSAL FOR MEMS DEVICE WLP

Chip 1

Chip 1

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TECHNICAL PROPOSAL FOR MEMS DEVICE WLP

Chip 1

Chip 1

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Chip 1

Chip 2

Chip 3

Chip 4

Schematic plan showing a possible EXISTING chip configuration

Active Area

Scribe / Dicing Area

Bond Pads

Isolation line

Bond pad size= 100 micron Sq.

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Chip 2a

Proposed NEW chip configuration

Bond pad size= half original pad

Active Area

Scribe / Dicing Area

New Bond PadsChip 2a

Chip 2a

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Proposed NEW chip configuration

Chip 2a

Bond pad size= 50 micron Sq.With 20 micron SqOpening at center.

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Proposed NEW chip configuration

Chip 2a

Chip 2a

Via fabrication At the scribe zoneVia Size 20um Sq. X 50 um

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Proposed NEW chip configuration

Chip 2a

Chip 2a

Via passivation PECVD process

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Proposed NEW chip configuration

Chip 2a

Chip 2a

Interconnection At the scribe zone

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Proposed NEW chip configuration

Chip 2a

Chip 2a

Top Passivation layer

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Proposed NEW chip configuration

Chip 2a

Chip 2a

Glass wafer Bonding

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Proposed NEW chip configuration

Backside of the Wafer after Back grinding and polishing

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Proposed NEW chip configuration

1st Passivation on backside

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Proposed NEW chip configuration

Back side pad opening

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Proposed NEW chip configuration

Routing to new Bump pads

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Proposed NEW chip configuration

2nd PassivationFilm on bump pads

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Proposed NEW chip configuration

UBM pads

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Proposed NEW chip configuration

Solder Bumping

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Proposed NEW chip configuration

Dicing Process

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