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Laboratoire d'Analyse et d'Architecture des Systèmes

du CNRS

Welcome

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CL CSDirection

Pôles

Organisation

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TEAM

II

MINAS ROSA

SINCMOCOSY

OL

C

TS

F

RIA

RS

T

MO

GIS

A

MA

C

DIS

CO

ISI

MIS

M2D

NA

NO

PH

OT

O

MIN

C

MO

ST

- 75 researchers, 80 PhD, 19 Post docs

ISG

E

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Devices and systems

Information Communication

Biology, Chemistry, Physics

Modeling

DesignCharacterization

Technological

processes

Power management

MINAS

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Integration

Devices

and

functions

Systems

Modeling design

Technology, materials and process

Characterisation, reliability

Multi scale nano, micro, macro3D, heterogeneous,

Research strategy

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Moore law

CMOS+ passives

MEMS RF

Sensorsactuators

MOEMS

Lab on chip

Integrated circuits

Size reduction

MagneticDielectric

Silicon membrane BCB technology

Hetero structures for laser emissionPhotonic crystal on silicon

Materials for detection and actuation(Piézo…)

Nano technologyMicrofluidic3D Packaging

New functionalities

Goals

FunctionalIntegration

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MIS

M2D

NA

NO

PH

OT

O

MIN

C

ISG

E

Strategic axis (2007-2010)

Integrated systems for power management

Micro and nano systems for biology

Micro and nano systems for communications

Micro and nano systems design

MO

ST

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Brest

Besançon

Limoges

Orléans

Rouen

Caen

Troyes

Tours

Clermont-Ferrand

Dijon

Avignon

Belfort

Poitiers

Vannes

Le Mans

Amiens

Ile de France

Grenoble

Toulouse

RennesBrest

Lille

Nancy

LyonSaint-

Etienne

Lannion

Montpellier

Nantes

Marseille

Angers

LAAS: Communicationpower management, biology/chemistry

Technological platform

Besançon

+Characterisation platform

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etching and

cleaning

Plating benches

DRIE STS (4’’), RIE ICP TRIKON (1 III-V, 1 Si, SiO2, Si3N4; 1 for Metals, polymersPlasma O2 TEPLA

Furnaces: MOS oxidation, MEMS Oxidation, Diffusion, III-V AlOx process

3 EDWARDS stations, 2 ALCATEL sputtering, 1 VARIAN (MEMS, Rع D), 1 VEECO

Metallisation

Clean room facilities

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HEIDELBERG DWL200: 5 to 20cm masks, 0.7µm resolution, direct writing on wafers

Photolithography: manual area

Photolithography:Automatic area

III-V Molecular Beam Epitaxy (2 x 32 RIBER)

E-beam writer: RAITH 150 (>20nm)

EATON ion implanter

Clean room facilities

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• Electrical characterization

Characterisation platform

I (V) Tests: Max 10A ou 1kV AFM

• Physical characterization

UV Photoluminescence

• RF characterisation • Optical characterisation

Noise measurementNoise measurement

5 IT, 480 m 2 750m 2 new building