1 ADVANCED SIC WAFER INSPECTION - Fraunhofer
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FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY Fraunhofer IISB Schottkystraße 10 91058 Erlangen, Germany Dr. Birgit Kallinger Phone +49 9131 761 273 [email protected] www.iisb.fraunhofer.de Intego GmbH Henri-Dunant-Straße 8 91058 Erlangen, Germany Dr. Steffen Oppel Phone +49 9131 61082 210 [email protected] www.intego.de/en/ ADVANCED SIC WAFER INSPECTION Multi-Channel Microscope Scanner for SiC Wafers Tool Features and Benefits Fast, high-resolution surface inspection system for non-destructive imaging of defects on and below the SiC wafer surface SiC substrates, epiwafers and partially processed wafers with 100, 150 or 200 mm diameter Simultaneous imaging of surface defects in bright field/dark field/transmitted light (BF/DF/TL) mode and with differential interference contrast (DIC) as well as structural defects with UV excited photoluminescence (UVPL) imaging technique without artefacts of wafer chuck Imaging, classification, and quantification of surface defects, such as particles, scratches, pits, and structural defects below the wafer surface, e.g. dislocations and stacking faults Unique possibilities in UVPL channel: Different UV wavelengths available from 305 nm to 365 nm for optimal excitation of the SiC material Spectroscopic measurements of defects Adjustable spectral filtering available for special defect selection in UVPL imaging mode Detailed dislocation analysis Fully automated system - including wafer handling, image recording, defect recognition and classification as well as reporting CAD-based patterned wafer inspection incl. teaching of new layouts Suitable also for surface investigations of other semiconductor wafers, such as Si, Ge, GaN, AlN, AlGaN, GaAs, glass/sapphire wafers, and LiTaO 3 1 UVPL image of SiC VDMOS devices recorded with the new multi - channel microscope scanner. 1
Transcript of 1 ADVANCED SIC WAFER INSPECTION - Fraunhofer
F R A U N H O F E R I N S T I T U T E F O R I N T E G R A T E D S Y S T E M S A N D D E V I C E T E C H N O L O G Y
Fraunhofer IISB
Schottkystraße 10
91058 Erlangen, Germany
Dr. Birgit Kallinger
Phone +49 9131 761 273
www.iisb.fraunhofer.de
Intego GmbH
Henri-Dunant-Straße 8
91058 Erlangen, Germany
Dr. Steffen Oppel
Phone +49 9131 61082 210
www.intego.de/en/
ADVANCED SIC WAFER INSPECTIONMulti-Channel Microscope Scanner for SiC Wafers
Tool Features and Benefits
Fast, high-resolution surface inspection system for non-destructive imaging
of defects on and below the SiC wafer surface
SiC substrates, epiwafers and partially processed wafers with 100, 150 or
200 mm diameter
Simultaneous imaging of surface defects in bright field/dark field/transmitted
light (BF/DF/TL) mode and with differential interference contrast (DIC) as well
as structural defects with UV excited photoluminescence (UVPL) imaging
technique without artefacts of wafer chuck
Imaging, classification, and quantification of surface defects, such as
particles, scratches, pits, and structural defects below the wafer surface, e.g.
dislocations and stacking faults
Unique possibilities in UVPL channel:
Different UV wavelengths available from 305 nm to 365 nm for optimal
excitation of the SiC material
Spectroscopic measurements of defects
Adjustable spectral filtering available for special defect selection in UVPL
imaging mode
Detailed dislocation analysis
Fully automated system - including wafer handling, image recording, defect
recognition and classification as well as reporting
CAD-based patterned wafer inspection incl. teaching of new layouts
Suitable also for surface investigations of other semiconductor wafers, such
as Si, Ge, GaN, AlN, AlGaN, GaAs, glass/sapphire wafers, and LiTaO3
1 UVPL image of SiC VDMOS devices
recorded with the new multi-
channel microscope scanner.
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Surface defects and structural defects in 4H-SiC epiwafers
Test structures after ion implantation Report and statistics (example: bright triangles in UVPL)
DIC (left) and UVPL (right) images of test structures
after N and Al ion implantation with different
energies and doses.
Our services:
Test measurements and tool demonstration
Development of specific measurement conditions und defect quantification routines incl. statistical defect analysis
Validation of measurement results with complementary characterization methods or industrial in-line tools
Service based measurement with feedback loops within a few days
R&D project collaboration
Typical application examples collected with SiC multi-channel inspection:
