“ Setting the Standard in Device Programming ” BPM Flashstream The Fastest Flash Programmer on...

“ Setting the Standard in Device Programming ”

BPM FlashstreamThe Fastest Flash Programmer on the Planet

© 2007 BPM Microsystems

BPM Microsystems' mission is to make it easy for our customers to program semiconductors with

the highest quality at a competitive cost per device

Company Mission Statement


History of Revolutionary Products

1992 AMD high speed PLDs cause ground bounce and cannot be programmed BP-1200 solves problem

1994 Altera EPLDs ramps volume but causes programming bottleneck BP-2100 solves problem

1996 fine pitch TSOP devices ramp up in volume but bent leads cause problems BP-4100 solves problem


Flash Forecast

2007 problem: flash programmers unable to keep up with flash shipments

Source: IC Insights

0

1000

2000

3000

4000

Millions of Units

2005 2006 2007F

Flash Shipments

>1Gb

1Gb

512Mb

256Mb


Introducing Flashstream

Fastest flash programmer on the planet

Fastest payback in the industry

Fastest way to capture your competitors’ market share!


Designed for High Density Flash

Programs NAND and NOR Flash

Programs 4 devices in one programming cycle

Bad block replacement scheme for NAND flash

Low voltage support


System Specifications

Maximum density 32Gb

32.7Gb memory per site

Upgradeable memory to handle future densities


Fastest on the Market

12 times faster than current 2710 technology for Samsung OneNAND™ KFG1216Q2A-DEB5

*Times are for quantity 4 of 512Mb Samsung OneNAND™ KFG1216Q2A-DEB5 with operations of erase, program, verify with random data pattern.

**Times listed are for specific device. Results will vary based on device characteristics


Serial NOR Flash Speed

7 times faster on erase, program, verify than current technology for SST25VF016B

61 times faster on verify function alone

16Mb NOR Flash

8

29.9 24.4

0.4

0 10 20 30 40 50 60

Flashstream

2710-2

Seconds

Program & Erase

Verify

Verify 0.4 24.4

Program & Erase 8 29.9

Flashstream 2710-2


Compared to Competition

Average programming time on Flashstream compared directly to nearest competitor:

NAND flash memory - over 5 times faster

Serial flash memory - over 9 times faster

NOR flash memory - over 1.6 times faster


Flashstream Comparison Times www.flashstream.bpmmicro.com


NAND Fastest Times

2Gb in 31.1 seconds1Gb in 19.8 seconds512Mb in 11.1 secondsTimes include 100% of chip

programmed on 4 sockets


Vector Engine Technology

Provides the lowest possible programming overhead compared to theoretical minimum

Utilizes proprietary co-processor design to hardware accelerate flash memory waveforms

Enables peak verify bandwidth at 800 Mb/s (20ns cycle) on 4 devices simultaneously


Vector Engine Technology Tester derived

technology platformFaster speeds achieved

through synchronous operation

In most cases, programs at the theoretical limits of the silicon design, the faster the device, the faster the device is programmed.

Ready for future devices


Scalable Design

Single units can be mechanically connected LED display identifies programmer number that

corresponds to software instructions USB 2.0 Interface

Multiple Flashstream units can be connected to one computer to run the same programming job in concurrent programming™ mode


Flashstream Socket Cards

Can program with one, two, three or four socket cards

Only single socket card purchase for first article qualification

Easy to remove and store with less space

Active, Pass and Fail LED status indicators on each individual socket card

Auto-start on continuity check option

Controlled impedance path for signal integrity


Flashstream Device support

2800F support from 150 devices at shipment Aug 1 to 490 currently for 11 different semiconductor manufacturers

We are supporting new devices at no charge with purchase of equipment. This no charge support is only for devices that have a socket card developed to support that semiconductor package. If a new socket card needs to be designed, then a development charge will apply.

All devices supported by 2800F are supported on HelixFS and 3000FS products.


Data Integrity

Zero overhead CRC32 verifies backing store data during each program and verify cycle

Socket cards utilize connector with ground blade to provide controlled impedance path from Pin Driver to DUT

Program and Erase cycles are controlled by DUT. Flashstream speeds programming by eliminating dead times but does not change internal DUT timing.


BPWin Drives Flashstream

Utilizes standard BPWin software which controls all BPM products

Integrates existing jobmaster files Production friendly security and job setup Full control of programming jobs 1 year software warranty included


Rugged Design

Rigid aluminum chassis

Modular design Robust production

environment platform 1 year hardware

warranty included


Helix FS Automated

Desktop Automated programming system

800 Devices per hour2 Flashstream

programming sites and 8 sockets

Interchangeable with Universal programming sites


3000FS AutomatedHigh volume

programming system1100 Devices per

hour handler speed4 Flashstream

programming sites and 16 sockets

Tape, tube, or tray input/output, with laser marking or labeling


Flashstream Update

What customers are saying?

“You smoked the SG T9600” in a comparison test with a System General T9600

290 seconds versus 12 seconds with Flashstream

When one customer switched from a 2710 to a Flashstream, programming time went from 420 seconds to 7 seconds on a 4Gb NAND part


New for BPWin 4.72

New for 4.72 November 11, 2007 BPWin releaseSerialization on 2800F for 4.72

Both simple and complex serialization is available on all 4 sockets

Improved Bad Block management new tool for 4.72 Now 80% of Bad Block Management Scheme’s can be

duplicated without a custom algorithm

Faster Programming on newer technology NAND Improved STMicro Large Page Family 1Gb from 37.2 to

19.8 seconds – Vector engine compatible with factory cache mode


Bad Block Management Scheme

5 basic elements to a Bad Block Management Scheme (BBM) Bad Block Replacement (BBR) Strategy Partitioning Error Correcting Code (ECC) algorithm Spare Area Placement Free Good Block Formatting


NAND options – Bad Block Replacement (BBR)

Skip Bad Blocks - In this strategy, the

replacement block is simply the next good physical block following the bad block in ascending order. This is the most common strategy when bulk pre-programming, and is best in terms of throughput (DPH) in the bulk pre-programming process.

Reserve Block Area - This utilizes a specially reserved "reservoir" of blocks, generally at the end of the NAND device, to be used as replacements for Bad Blocks that are encountered in the main partitions, called the User Block Area (UBA). When a Bad Block is encountered during programming, the data pattern content originally destined for it is instead programmed into one of the Good Blocks in the RBA reservoir. Since this strategy is not linear in nature, a table must be maintained that maps Bad Blocks to the RBA replacement block.


High performance socket modules

Load cycles of 50,000 insertions for only about 50% more in cost over a standard socket card

Currently only available for 0.8 pitch BGA’s under 169 pins.

Other BGA pitches will be available soon.

Designed specifically for lead-free BGA devices


Problem Solved

Fastest programming times Enables new applications, especially for very large

patterns Reduces costs associated with product using NAND

Flash

“ Setting the Standard in Device Programming ”

“ Setting the Standard in Device Programming ” BPM Flashstream The Fastest Flash Programmer on...

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