Post on 18-Mar-2016
description
Target
Beam
rmax = 150 mm
12
34
1 2 3 4 56
r / mm13595
2555
2040 70100
160230
-170-230
z / mm
6 disk layers 4 barrel layers Silicon detectors:
Hybrid pixel detectors Double-sided microstrip detectors
Target
Beam
Implementation Approx. 11 million
pixel readout channels Approx. 200. 000
strip readout channels
Detailed CAD model
Detailed model including routing
Active detector volumes only
Detector simulation
Circular occupancy Bundling (top/bottom)
PatchPanels
Circular or bundled
(7.6 … 15.0) cm
0-23-40-100 z / cm 60
Beam
Overall routing concept
Overall detector integration
Central support frame
3 point fixation Global frame (MVD):
2 halves
MVD attachment
2 pixel half-barrels
2 strip half-barrels
6 pixel half-disks
2 strip half-disks
Main MVD parts
Mechanics
• Cooling concept Coolant: Water (18°C) Vacuum-operated mode using
hydrostatic pressure Active part:
ext 2 mm pipe (Ni-Co alloy)
Upstream routing: ext 4 mm flexible plastic pipes
Micro fittings:Thermoplastic
resin
Barrel layer
Test setup
23°C
31°C
Glue: Epo-Tek H70
Tmax = 37.2°C
Glue: Master Bond
Tmax = 30.4°C Tmax = 28.2°C
Glue: Artic Silver
Thermal FEM analysis
Infrared image
Mechanics• Lightweight support structures
Sandwich structure: (Carbon – Rohacell – Carbon)
Stiffening structure:2...4 layers of carbon fibre (400 m)
HTC foam half disk embedding cooling pipes
R = 137 mmL = 460 mmS = 3.8 mm
MVD half support frame
Barrel layer support
Local support (barrel modules)
• ToPix: Custom designed readout chip Specifications
Untriggered readout High output bandwidth 116 110 pixel matrix
(100 100 m2 cell size) Time over threshold technique
(TOT) for amplitude measurement Low power consumption
(< 500 mW/cm2) CMOS 130 nm technology
Measurements Testing procedures Total ionizing dose test ToPix prototype
connected to epi-sensor
Detector development: Front end electronics
Detector development
• Pixel sensor Specifications
Epi-Silicon layer: (50 ... 100) m Thinned Cz silicon substrate: 50 m Alt.: Thinned oxygen enriched silicon
Measurements Sensor characterization Radiation damage test (neutrons)
Maximum count rates / frontend: (1 ... 10) Mevts / s Integrated count rate (pixel part): 1.8 Gevts / s Integrated count rate (strip part): 1.2 Gevts / s
Full MVD: 3.0 Gevts / s
Count rates
• Spatial coverage 2D mapping: Number of MVD points / track
Design optimization for a minimum of 4 track points
Number of MVD points
/ track
Active MVD volumes
• Radiation length studies (Geantino) 1D profile scan for polar angle
Minimized material budget for polar angle < 140° Higher values above 140° due to upstream routing Slight enhancement 40° due to lead-out of pixel disk services
Detailed MVD model
< 1% / layer ( < 10%)
• Momentum resolution
p pt
1 GeV/c pions (0;0;0)
(pt) without MVD = 2.9 %(pt) with MVD = 1.4 %
(p) without MVD = 2.6 %(p) with MVD = 1.4 %
Improvement by 50%
• Single track resolution
No resolution along z without MVD
z xy
zxy z 65 m
15 GeV/c• Primary vertex resolution
• Vertex resolution Primary and secondary
vertex resolution: x,y 35 m
z 100 m
(6.57 / 7.50 / 8.50) GeV/c
d0
• Physics analysis Reconstruction:
Conservative estimate
d0
S/N 2
6 orders of magnitude lower
decay lengthScaled back- ground
Vertex cut:
S/N =1
arXiv:0903.3905v1 [hep-ex]
23% efficiency
Background suppression for open charm channels
impossible without MVD