Post on 13-Jul-2020
Optical Power
[W]
10
2
0.2
0.1
Beam Quality
20
Product Families
Portfolio Regional Share
Company Development
45%
19%
19%
13% 4%
Germany EMEA NAFTA APAC Japan
cagr. 24%
Volume [pcs/a]
t
10
100
1.000
100.000
Consumer Markets
10.000
Research Facilities
•
•
•
•
•
•
eyP facility
Laser diode material (active region / substrate)
Typical emission wavelength
InGaN / GaN, SiC 380 - 470 nm
AlGaInP / GaAs 630 - 670 nm
AlGaAs / GaAs 720 – 850 nm
InGaAs / GaAs 900–1100 nm
InGaAsP / InP 1000–1650 nm
Optical Power [W]
10
2
0.2
0.1
Beam Quality
20
NORDIC
Hanamura
SLEO Photonics
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
30%
9% 5% 6%
15%
4%
31%
Scientific
Instrument. & Sensors
Material Processing
Medical
Space and Defence
Communic. & Opt.Storage
Distribution
45%
19%
19%
13%
4%
Germany
EMEA
NAFTA
APAC
Japan
•
•
• λ
•
•
•
•
•
•
•
Laser
DOE
•
•
•
• λ
•
•
• 1 to 50 ns pulse width
• up to 1 W peak power
• up to 1 MHz repetition rate
• SMSR > 35 dB
• Single Mode PM Fiber
1062 1063 1064 1065 1066 1067
-80
-70
-60
-50
-40
-30
-20
-10 15°C
20°C
25°C
30°C
35°C
40°C
45°C
Inte
ns
ity
[d
B]
Wavelength [nm]
GC-01199, 1 AEYP-DFB-1064-00500-1500-BFY02-0010
•
• λ
•
•
•
•
•
•
•
•
•
TO packages
•
• λ
•
•
Tapered Amplifier Seed Laser
Collimating Lens
AR Coating
Focussing Lens
•
• λ
•
•
Grating
Tuning Mirror
RWE Laser
Collimating Lens
AR Coating
Output