Post on 05-Feb-2021
Technical Overview
Keysight TechnologiesPower Electronics Device Modeling
02 | Keysight | Power Electronics Device Modeling - Technical Overview
Power Electronics Device Modeling
Power Electronics (PE) design engineers are under strong schedule pressure to address the growing needs of power conversion, motor drivers, etc. Meanwhile, to enable smaller designs, the switching frequencies are going up into the 100s of kHz and even low MHz. While these might be modest frequencies, the voltages, and in particular, the changes in voltages versus time (dV/dt) are very large. GaN devices today are switching within 250 ps, generating harmonic content into the GHz range. Inductances as small as 0.1 nH can reshape the waveforms driving the gate, causing ringing and transient induced noise. Stray inductance in the high current path is very common, leading to large L*di/dt.
These surges in voltage and current, along with the ringing that follows can cause circuit malfunction, and in some cases, circuit explosion. The high switching frequencies and associated harmonics lead to undesirable electromagnetic interference.
These are big problems that need to be simulated and resolved. On the one hand, designers may improve reliability by using larger power modules, but this leads to increased cost and size. On the other hand, smaller nimbler devices must be simulated to predict voltage and current surge issues. Modern power converters are now increasingly digitally controlled, with arrays of discrete power devices placed side-by-side. To capture a transient over-voltage of a device, the question arises: “How can we model this?”
Many PE designers simply give up, relying instead on their decades of experience making circuits work on the lab bench. Designs are therefore iterative, with managers planning small changes between hardware releases. R&D budgets can swell due to longer than expected design cycles. Even worse, the design team loses its edge on the competition.
4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5
Time (µSec)
-5
0
5
10
15
20
Volts
2
3
4
5
6
7
8
Time Domain Measurements on Half-Bridge Circuit with SiC MOSFETs
Low gate drive
High gate drive
Half-bridge midpoint/40
Inductor current
Am
ps
Voltage
Temperature
03 | Keysight | Power Electronics Device Modeling - Technical Overview
But there is a better way. What if we could accurately model both the device and the board?
What if a design team could quickly transition from a 400 V, 1 A converter to a 10 V, 100 A converter in a significantly smaller form factor? To do this, one would need accurate models, models based on measured data and extracted quickly and efficiently using state-of-the-art modeling tools. Fortunately, we have a solution.
What data do we need for accurate modeling?
1. DC IV data, collected by both a curve tracer using double pulse test (or clamped inductive load).
2. Off-state capacitances may be derived from AC measurements built into the curve tracer.
Measurement Data1Off-state C-V
Test SolutionCurve Tracer
Measurement System
B1506A
1. “Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior over Wide Voltage and Current Ranges”, H. Sakairi, et. al., IEEE Trans on Power Electronics early access
Test SolutionDouble Pulse Test System
Measurement Data1
I-V
Curve TracerMeasurement System
DPT
Vgs = 11.5 V
Vgs = 11.0 V
Vgs = 10.5 V
I d(A
)
Vds(V)
25
20
15
10
5
0100 200 300 400 500 600
B1506A
04 | Keysight | Power Electronics Device Modeling - Technical Overview
3. Zero bias S-parameters may be used to estimate device gate resistance (Rg) and series inductances. “Ls” is especially important for ringing and oscillations.
4. S-parameters may be measured under DC bias with an SMU and bias tee to give on-state capacitance vs. frequency.
Test SolutionS-Parameter
Measurement System
ENA
Measurement Data1
Zero-bias S-parameters
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10 2020
-20
10
-10
5.0
-5.0
4.0
-4.0
3.0
-3.0
2.0-2
.01.
8-1
.8
1.6
-1.6
1.4
-1.4
1.2
-1.2
1.0
-1.0
0.9
-0.9
0.8
-0.8
0.7
-0.7
0.6
-0.6
0.5-0
.5
0.4
-0.4
0.3
-0.3
0.2
-0.2
0.1
-0.1
Freq (10.00kHz to 319.4MHz)
SparS11S12S21S22
Test SolutionS-Parameter
Measurement System
ENA with SMU
Measurement Data1On-state C-V
Frequency (Hz)
Cgd
(F)
3
4 x 10-9
2
1
0
-1104 105 106 107 108 109
Meas
Vgs = 6 V
Vgs = 3 V
Vgs = 4.5 V
Sim
1. “Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior over Wide Voltage and Current Ranges”, H. Sakairi, et. al., IEEE Trans on Power Electronics early access
05 | Keysight | Power Electronics Device Modeling - Technical Overview
The PD1000A Power Device Measurement System for Advanced Modeling control software is used to orchestrate these measurements and organize the data into directories. To create a device model, the data is then read in using Keysight’s Power Electronics Model Generator software (W8598BP). This software currently supports 3 different power electronics device models, although more are expected to be added soon.
All 3 of these models have been implemented in Verilog-A, and are available for simulation in ADS 2017. The Si/SiC and IGBT models have been specially formulated for customers who do not have access to device process parameters, a situation that is common in power electronics design labs.
1. Image used by permission. https://na.industrial.panasonic.com/whats-new/mass-production-xgan-gate-driver
GaN ASM-HEMT Model,adopted by the CMC 1
Keysight model for Si and SiC Power-MOSFET devices
Keysight model forIGBT devices
06 | Keysight | Power Electronics Device Modeling - Technical Overview
The user interface reflects the major steps that any modeling engineer must undergo.
Set project parameters, model flags and device constants.
Load data from a highly structured directory.
Extract model parameters.
Verify model accuracy.
Export device model parameters.
With the latest, most accurate models, one may rest assured that the device behavior has been captured with excellent accuracy.
Various modeling steps are shown on the left. On the right, parameters may be manually tuned using sliders.
We invite you to stay ahead of the curve, and get your designs to production sooner and with greater confidence. The PEMG provides a comprehensive modeling solution for discrete power electronics devices, with an intuitive UI and the latest, most powerful models.
07 | Keysight | Power Electronics Device Modeling - Technical Overview
Ordering InformationIC-CAP users who require the maximum flexibility may customize the extraction flow using the following add-on packages.
– W8536EP/ET SiC PowerMOS Power Electronic Modeling – W8537EP/ET IGBT Power Electronic Modeling – W8538EP/ET GaN Power Electronic Modeling
These packages require the W8501E IC-CAP Core Environment and W8502E IC-CAP Analysis, both of which are included in the W8500B Modeling Bundle.
All three models are also offered in a stand-alone software that is part of a larger PD1000A solution called “Power Device Measurement System for Advanced Modeling.”
– W8598BP/BT Power Electronics Model Generator (PEMG) Software
08 | Keysight | Power Electronics Device Modeling - Technical Overview
For more information on Keysight Technologies’ products, applications or services, please contact your local Keysight office. The complete list is available at:www.keysight.com/find/contactus
Americas Canada (877) 894 4414Brazil 55 11 3351 7010Mexico 001 800 254 2440United States (800) 829 4444
Asia PacificAustralia 1 800 629 485China 800 810 0189Hong Kong 800 938 693India 1 800 11 2626Japan 0120 (421) 345Korea 080 769 0800Malaysia 1 800 888 848Singapore 1 800 375 8100Taiwan 0800 047 866Other AP Countries (65) 6375 8100
Europe & Middle EastAustria 0800 001122Belgium 0800 58580Finland 0800 523252France 0805 980333Germany 0800 6270999Ireland 1800 832700Israel 1 809 343051Italy 800 599100Luxembourg +32 800 58580Netherlands 0800 0233200Russia 8800 5009286Spain 800 000154Sweden 0200 882255Switzerland 0800 805353
Opt. 1 (DE)Opt. 2 (FR)Opt. 3 (IT)
United Kingdom 0800 0260637
For other unlisted countries:www.keysight.com/find/contactus(BP-9-7-17)
DEKRA CertifiedISO9001 Quality Management System
www.keysight.com/go/qualityKeysight Technologies, Inc.DEKRA Certified ISO 9001:2015Quality Management System
This information is subject to change without notice.© Keysight Technologies, 2018Published in USA, March 23, 20185992-2771ENwww.keysight.com
Evolving Since 1939Our unique combination of hardware, software, services, and people can help you reach your next breakthrough. We are unlocking the future of technology. From Hewlett-Packard to Agilent to Keysight.
myKeysightwww.keysight.com/find/mykeysightA personalized view into the information most relevant to you.
http://www.keysight.com/find/emt_product_registrationRegister your products to get up-to-date product information and find warranty information.
Keysight Serviceswww.keysight.com/find/serviceKeysight Services can help from acquisition to renewal across your instrument’s lifecycle. Our comprehensive service offerings—one-stop calibration, repair, asset management, technology refresh, consulting, training and more—helps you improve product quality and lower costs.
Keysight Channel Partnerswww.keysight.com/find/channelpartnersGet the best of both worlds: Keysight’s measurement expertise and product breadth, combined with channel partner convenience.