Post on 25-Aug-2018
1
Toray Industries, Inc.
PW-series
Positive Tone Photosensitive Polyimide Coatings
Photoneece TM
2
PW-series introduction
Semiconductor Package Structure
Why is PI necessary forsemiconductors package?
Why is POSI PI the most adjustableto semiconductors process?
Why is PW-series the best solution ofyour problems?
Semiconductor Process
Solution examples
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Semiconductor Package Structure1.TSOP or QFP
2.FBGA(stacked type)
3.Bare chip (Bump structure)
4.Wafer Level Package(WLP)
Polyimide
Mold compound
Lead flame
Polyimide
Mold compound
Solder bump
Gold bump
Gold Bump
Polyimide
Redistributedline(metal)
Polyimide
The reason why PI is necessary is---to protect filler attack---to increase packages reliability(buffer effectiveness)
The reason why PI is necessary is---to protect filler attack---to increase packages reliability(buffer effectiveness)
---to protect upper IC attack
The reason why PI is necessary is---to protect IC substrate(PI acts
like encapsulation)---to increase adhesion to ACF
The reason why PI is necessary is---to protect IC substrate(PI acts
like encapsulation---to increase adhesion to ACF---to distribute line
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Semiconductor Process
photoresist
passivationAlSi
Photoresist coating
Photoresist developing
Passivation dry-etching
Photoresist stripping
PI coating
Photoresist coating
Photoresist &PI developing
Photoresist stripping
PI curing
PI coating
PI developing
PI curing
Passivation dry-etching
exposure
exposure
exposure
Non-photosensitive PI photosensitive PI
POSI PSPI--alkaline solvent--high resolution
NEGA PSPI--organic solvent--low resolution
The most adjustable!
The number of processis fewer than non-PSPI.
exposure 2 times exposure 1 time
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Solution examples
The features of PW-series
High chemical resistanceHigh adhesion strengthGood taper shape
Useful for Bump & WLP
Low residual stress Useful for 12 wafer
High resolution
Low price
Useful for advanced memory & logic(Advanced memory= fuse box size is about 5um,Advanced Logic= left pattern width is 7um)
Useful for every device using NEGA
Solution
Is there any problems about above matters with you?We can provide solutions by recommending PW-series.
The reason why PW-series is the most suitable for all applicationsis that PW-series has following features solving your problems.
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1. Marketing Data
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Cost reduction of process and materialsRequirementsAvailability for aqueous development(TMAH 2.38%)Low temperature curing process/Good photo-speed Long storage lifeHigh resistance for dry etching process(1 mask process)
Customers Requirement Trends for PI
6inch 8inch 12inch
TSOP
QFP
PBGA STACKED BGA
FBGA
FCBGA
BARE CHIPBUMP IC
WLP
Wafer Size
Higher package reliabilityRequirementsHigh electric and thermal resistanceHigh adhesive strength
Semiconductor and package downsizingRequirementsHigher resolutionHigher adhesion to passivation layer
12inch wafer applicationRequirementsGood photo-speedLow residual stress and CTE
CSP(WLP) and bump applicationRequirementsExcellent chemical resistanceHigh adhesion to various materialsAvailability for multi layer(High Tg)
Package Density
TCP
4inch
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PIs Technical Trend
Non Photosensitive PI (negative tone)
Non Photosensitive PI (positive tone)
Photosensitive PI (negative tone)
Photosensitive PI (positive tone)
To stop hydrazine process
To be fine resolutionTo reduce process
But it has many problems such asneeds organic developmentneeds HMDS for increasing adhesionhas less film & liquid propertieshas out gas includedetc To reduce cost(process &
materials)To be high resolutionTo prevent deposit on side-wallTo lower out gasTo increase adhesion to MC and passivation layerTo be environmental friendly
Decreasing
Decreasing
Have vanished
1980 1990 2000
Solution of the problems Its becoming standard!
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Features of PW-series
High package reliabilityHigh electric and thermal resistanceHigh adhesion strength
Cost reduction of process and materialsAvailability for aqueous developmentLow temperature curing processGood photo speedLong storage lifeHigh resistance for dry etching process
Semiconductor and package downsizingHigh resolutionHigh adhesion strength to passivation layer
CSP and bump applicationExcellent chemical resistanceHigh adhesion strength to various materialsAvailability for multi layer
12 inch applicationGood photo speedLow residual stress and CTE
Customers requirement
Satisfying ICs requirement (Pure PI film)Excellent adhesion strength to MC and Si,SiN,TEOS etc.
Available for TMAH 2.38%Available for curing under 280The best photo speed in positive tone PSPIStable at room temperatureExcellent resistance for 1 mask process
The highest resolution(3um at 8um thickness)Excellent adhesive strength of even 5um line pattern to SiN
The highest chemical resistance in all PSPIExcellent adhesion strength to many metals(Cu,Al,Ni,Cr,Ti,Au,etc)High Tg and stability during curing process
The best photo speed in positivetone PSPIless than 40MPa and 36ppm/
PW-series is(has)
We can show you more detailed informationin the following Technical Data
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The best solution exampleIf you face following problems Then we can provide you with solutions such as
For non photosensitive customers:Poor viscous stability or solution stabilityLow resolution(around 30um)Numerous process
For negativetone photosensitive customers:Expensive material costLow resolution(about 10um)Deposit on side-wallOut gasWeak adhesion to MC and passivation layerOrganic development
For PBO customers:High CTE & residual stressLow chemical resistancePoor adhesion to passivaition layerLess storage stabilityNarrow cure process latitude
Excellent viscous stabilityFar higher resolution(3um)Photoresist process reduction
Moderate PI price and availability for aqueous developmentHigher resolution(3um)Far less out gas included and good taper shapeFar less out gas includedExcellent adhesion to that(not to need HMDS)Availability for aqueous development
The lowest CTE & residual stress in all PSPIExcellent chemical resistance(no crack during chemical process)Excellent adhesion to passivation layer(even if 5um line is OK)Excellent storage stability(no particle after R.T.storage)Wider cure process window(available for curing in air)
From PI customers view
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From IC manufacturers viewThe best solution example
For buffer coatings application
For CSP & bump application
(The present)A few padsFuse box 1020umTSOP
Fuse box
Pad
Left pattern
Pad
CSP & bump is very promising package.It can realize package shrinkage,improvement of electric properties, and cost reduction. Au bump
Redestribution routeUnder bump metal
PI layer
Si substrate
PI is/will be required for following things
Higher resolution(3-5um)
Higher chemical resistance for CSP & bump.
Higher adhesive strength to passivaiton layer.Higher chemical resistance for HF solution during wet etching before dry etching.
Higher adhesion strength to various metals.Higher chemical resistance for various etchant, flux, cleaner, solvent etc.
PW-series emphasize this field
(The future)A few padsFuse box 520umCSP
(The present)A lot of padsLeft pattern width 10umQFP
(The future)A lot of padsLeft pattern width 5umCSP
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DRAM
Flash
SRAM
MRAM
Logic(Graphic,LCDdriver,ChipSet,MPU,etc)
System LSI
TSOP
Bump ,WLP
Conventional propertiesElectric propertyThermal propertyAdhesion to MC & SIN
etc
Conventional propertiesProtective property forfiiler in MC
Low temperature curig
Higher Adhesion to SiNHigh chemical resistance(HF)
Conventional properties+Low temperature curingHigher Adhesion to SiNHigh chemical resistance
High chemical resistance(flux + cleaner,etchant,solvent)
Devicetrend
Packagetrend
From IC manufacturers viewThe best solution exampleHigher resolution
In the future, youll need requirement.PW-series is only PI which can satisfy these demands.
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PW-series basic properties
film property
PW-1000 PW-1200 PW-1500 PW-2100
Type Standard Thick Film High Chemical High Photo-Applicable Resistance Sensitivity
viscosity 1,500 1,500 1,500 1,500
total solid content 38 40 40 40-16 month 9 9 9 94 month 6 6 6 6
room temp. month 1 1 1 1th ickness 3-7 3-10 3-7 3-7
tensile strength 130 150 150 150250 cure % - 20 20 20320 cure % 30 20 20 20350 cure % 20 20 10 20380 cure % 10 20 10 20400 cure % 10 20 10 20
young's modulus 3.0 3.9 3.8 3.8CTE 36 36 36 36
250 cure MPa - 26 35 30320 cure MPa 28 36 38 36
5% weight loss temp. 480 475 435 475250 cure - 230 250 235320 cure 270 305 320 310350 cure 270 305 380 310380 cure 270 305 400 315400 cure 270 305 430 320
die lectric constant 2.9 2.9 2.9 2.9volume resistance >10^16 >10^16 >10^16 >10^16surface resistance >10^16 >10^16 >10-16 >10-16breakdown voltage >420 >420 >420 >420water absorption 0.6 0.6 0.6 0.6
Tg(TMA)
f ilm property
liquid property
residual stress
life time
elogation
kV/mm
-
cmcm2
%
Gpa(320)ppm/
(320)
mPa.swt%
Mpa(320)um
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PW-series basic propertiesPW-1000 PW-1200 PW-1500 PW-2100
coat spin spin spin spin
prebake 120/3 120/3 120/3 115/33um mJ/cm2 175 150 150 1005um mJ/cm2 400 300 300 1507um mJ/cm2 650 550 550 250
PEB Not required Not required Not required Not requireddevelop 20-120 20-120 20-120 20-120
cure 320-380 250-380 250-380 250-380NMP rt/15min no change no change no change no changeGBL rt/15min no change no change no change no changeEL rt/15min no change no change no change no change
acetone rt/15min crack no change no change no changePGMEA rt/15min no change no change no change no change
resist stripperDMSO/mono-ethanolamine
90/30min50% thickness decrease 10% thickness decrease 10% thickness decrease 10% thickness decrease
25%NaOH 40/10min no change no change no change no change10%KOH 40/10min no change no change no change no change
H2SO4/H2O2 40/10min no change no change no change no change1%HF /5min no change no change no change no change
f lux Deltalux533 290/30sec crack no change no change no changecleaner Pine-arfa 40/30min no change no change no change no change
process performance
chemical resistance
sec/min
exposure
solvent
alkakine
etchant
without HMDS/min
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2. Technical Data
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0 50 100 0 50 100 0 50 100
10000
Oxygen
1
100
250
PCT treatment time
Final Curing Temperature
Cure Koyo-Thermo Systems CLH-21CDPCT :121 C, 2 atm
Adhesion to Substrate (Si and SiN)
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0hr 100hr 0hr 100hr 0hr 100hr
no treatment 0/100 0/100 0/100 90/100 0/100 0/100
0/100 0/100 0/100 30/100 0/100 0/100
CF4(RIE) 0/100 0/100 0/100 0/100 0/100 0/100AR(Spatter) 0/100 0/100 0/100 0/100 0/100 0/100
treatment Ti
O2 (Plasma)
Adhesion
Adhesion to Metals(Cu,Ti,Cr)
Metals is made by spattering process after each treatment.Test method:Peeling test after 0hr,100hr at 150 (peeling pcs/total pcs)
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0
5
10
15
20
25
30
35
40
0 50 100 150 200 250 300 350
Temperature
Resi
dual
Str
ess
M
Pa
Heating
Cooling
Non photosensitive P I (35MPa)
PW-1000
Residual Stress
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MassChemical Group
m/z a RT16030min 16035060min 350500
18 H2O (Imidization 4.32 1.49 1.01
44 CO2(Sensitizer 6.49 1.91 0.93
99 NMPSolvent 5.57 0.09 0.00
4.18 2.00 0.88
28 Organic gas (Sensitizer) 3.05 0.64 1.27
132(
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Patterning Process of PW-1000
Spincoat 700rpm for 10sec and 3000rpm for 30secPrebaking 120oC3min (Hot plate) (Thickness:5.1 m)Exposure 175 mJ/cm2 (g-line, i-line stepper)Development 45 sec. 2 Paddle development (Thickness:4.2 m)
(2.38% TMAH solution)Curing 170oC for 30min+320oC for 60min (N2)
(Thickness:3.1 m)
3
Spincoat 700rpm for 10sec and 2100rpm for 30secPrebaking 115oC3min (Hot plate) (Thickness:8.1 m)Exposure 325 mJ/cm2 (g-line, i-line stepper)Development 45 sec. 2 Paddle development (Thickness:6.9 m)
(2.38% TMAH solution)Curing 170oC for 30min+320oC for 60min (N2)
(Thickness:5.0 m)
5
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Spincoat 700rpm for 10sec and 1600rpm for 30secPrebaking 115oC3min (Hot plate) (Thickness:11.6 m)Exposure 450 mJ/cm2 (g-line, i-line stepper)Development 60 sec.2 Paddle development (Thickness:10.0 m)
(2.38% TMAH solution)Curing 170oC for 30min+320oC for 60min (N2)
(Thickness:7.0 m)
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for 5 m Thickness after Curing(Manual Coating)Coating Recipe(manual coating)
STEP Time Rotate Accell. Dispense(sec) (rpm) (rpm/sec)
1 10.0 200 1000 PI Dispense2 5.0 0 1000 03 10.0 700 2000 04 30.0 2100 1000 05 2.0 0 1000 0
Development Recipe
STEP Time Rotate Accell. Dispense(sec) (rpm) (rpm/sec)
1 1.0 1000 10000 02 3.0 1000 10000 1 73 1.0 500 10000 1 74 1.0 100 10000 1 75 4.0 30 10000 1 76 36.0 0 10000 57 3.0 1000 10000 1 78 1.0 500 10000 1 79 1.0 100 10000 1 7
10 4.0 30 10000 1 711 31.0 0 10000 512 5.0 0 10000 513 5.0 500 10000 3 4 914 5.0 2000 10000 3 4 915 10.0 3000 10000 0
DeveloperTMAH 2.38%Flow rate0.6 L/minRinserwaterFlow rate1.2 L/minBack rinsewaterFlow rate150 mL/minExhaust60 PaNozzleStream Nozzle
Polyimide coating (Mark 7)
C/SCOL 23 X 60 sCOATPre-Bake (HP) 115 X 180 sCOL 23 X 60 sC/S
ExposureI-line Stepper GCA 8000 DSW WAFER STEPPER
Exposure Dose 325 mJ/cm2)focus 0m
Development (Mark 7)C/SDEVC/S
CuringAppratusINH-21CD (Koyo Thermosystem)Heatingr.t. 17030 min 32060 min r.t. (slope 3.5/min)Oxygen concentration
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Coater recipe(Auto)STEP Time Rotation Accel Dispence Arm1 Arm2
1 1.0 0 100 0 1 center W home2 2.0 0 100 0 1 center NW home Dispence No.3 9.0 50 100 1 1 center NW home 1PI dispence4 6.0 50 100 1 1 center NW home 5back rinceOK735 5.0 0 10000 0 1 center NW home 6edge rinceOK736 10.0 1100 10000 0 1 home NW home7 30.0 1530 10000 0 1 home NW home8 5.0 1530 10000 0 1 home NW in19 1.0 1000 10000 6 1 home NW in1 Film thickness is controled in step 7,8.10 30.0 1000 10000 5 6 1 home NW in211 1.0 1000 10000 5 6 1 home NW in112 25.0 1000 10000 5 6 1 home NW in2 Edge rince flow rate10ml/min13 5.0 1000 10000 6 1 home NW in2 Back rince flow rate70ml/min14 1.0 1000 10000 0 1 home NW home15 2.0 500 10000 0 1 home NW home
for 5 m Thickness after Curing(Auto Dispense)
Development Recipe
STEP Time Rotate Accell. Dispense(sec) (rpm) (rpm/sec)
1 1.0 1000 10000 02 3.0 1000 10000 1 73 1.0 500 10000 1 74 1.0 100 10000 1 75 4.0 30 10000 1 76 36.0 0 10000 57 3.0 1000 10000 1 78 1.0 500 10000 1 79 1.0 100 10000 1 7
10 4.0 30 10000 1 711 31.0 0 10000 512 5.0 0 10000 513 5.0 500 10000 3 4 914 5.0 2000 10000 3 4 915 10.0 3000 10000 0
DeveloperTMAH 2.38%Flow rate0.6 L/minRinserwaterFlow rate1.2 L/minBack rinsewaterFlow rate150 mL/minExhaust60 PaNozzleStream Nozzle
Polyimide coating (Mark 7)
C/SCOL 23 X 60 sCOATPre-Bake (HP) 115 X 180 sCOL 23 X 60 sC/S
ExposureI-line Stepper GCA 8000 DSW WAFER STEPPER
Exposure Dose 325 mJ/cm2)focus 0m
Development (Mark 7)C/SDEVC/S
CuringAppratusINH-21CD (Koyo Thermosystem)Heatingr.t. 17030 min 32060 min r.t. (slope 3.5/min)Oxygen concentration
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Keeping days 0 3 7
after coating
Thickness
Thickness afterdeveloping
Sensitivity
0 3 7after exposure
11.52 11.52 11.52
11.52 11.52 11.52
10.06 10.05 10.02
10.06 10.04 9.96
425mJ/cm2
425mJ/cm2
425mJ/cm2
425mJ/cm2 425mJ/cm2
425mJ/cm2
Prebaking Condition 4min (TEL Mark-7)Development Condition solution 120sec(total time)bSensitivity 5m resolution @7m thickness
Keeping days
Thickness
Thickness afterdevelopingSensitivity
Coated Film Stability
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Thickness Range SigmaWafer No.
1 7.8043 2642 7.8000 2333 7.7900 2924 7.8031 3165 7.7936 2596 7.7702 2247 7.8055 2018 7.8558 2549 7.8385 314
10 7.7771 22011 7.7686 22612 7.7380 40813 7.9036 31114 7.8005 37315 7.7960 32916 7.8075 35417 7.8102 49118 7.8467 44519 7.8712 54620 7.8622 38821 7.7697 23422 7.8696 29023 7.8050 20024 7.8281 32925 7.8784
1040713828848772546573711863513606
1121936
1153835
10811264124315531142657676539980168 64
Mean 7.8162
Wafer ThicknessNo1
1 7.82082 7.77083 7.79914 7.78575 7.78836 7.83197 7.85978 7.81499 7.7892
10 7.805211 7.806612 7.755713 7.8280
Mean 7.8043
Range 1040
264
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13
Coater : Tokyo Electron Mark-7
Film Thickness Uniformity
26
Critical Dimension after Development
Process ConditionPre-baking 1203min (proximity)
(Thickness 7.90m)Exposure tool i-line stepperDevelopment 120sec. Paddle (2.38%TMAH solution)
(Thickness 6.67m)
Mask Size 10
4
6
8
10
12
14
16
150 200 250 300 350
Exposure Dose (mJ/cm2)
Ape
rture
Size
(m
)
Top
Bottom
Mask Size 5
0
2
4
6
8
10
12
150 200 250 300 350
Exposure Dose (mJ/cm2)
Ape
rture
Size
(m
)
Top
Bottom
Mask Size 20
14
16
18
20
22
24
26
150 200 250 300 350
Exposure Dose (mJ/cm2)A
pertu
re S
ize (
m)
Top
Bottom
27
Mask Linearity after Development
Bottom Size
0
5
10
15
20
25
30
150 200 250 300 350
Exposure Dose (mJ/cm2)
Ape
rture
Size
(m
)
5m Mask
10m Mask
20m Mask
Top Size
0
5
10
15
20
25
30
150 200 250 300 350
Exposure Dose (mJ/cm2)
Ape
rture
Size
(m
)
5m Mask
10m Mask
20m Mask
28
Critical Dimension after Curing
Curing ConditionApparatus INH-21CD (Koyo Thermosystem)Heating 14060min+32060min
(slope: 3.4/min)Oxygen under 300ppm (Nitrogen gas purge)
(Thickness 5.12m)
Mask Size 5
0
2
4
6
8
10
12
150 200 250 300 350 400
Exposure Dose (mJ/cm2)
Ape
rture
Size
(m
)
Mask Size 10
4
6
8
10
12
14
16
150 200 250 300 350 400
Exposure Dose (mJ/cm2)
Ape
rture
Size
(m
)
Mask Size 20
14
16
18
20
22
24
26
150 200 250 300 350 400
Exposure Dose (mJ/cm2)A
pertu
re S
ize (
m)
29
Mask Linearity after Curing
BottomSize
0
5
10
15
20
25
30
150 200 250 300 350 400
Exposure Dose (mJ/cm2)
Ape
rture
Size
(m
)
5m Mask10m Mask
20m Mask
Top Size
0
5
10
15
20
25
30
150 200 250 300 350 400
Exposure Dose (mJ/cm2)
Ape
rture
Size
(m
)
5m Mask
10m Mask
20m Mask
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DOF of PW-1000
0123456
-5 0 5
Focus
Actu
al S
ize
DOF of PW-1000
8
9
10
11
-5 0 5Focus
Actu
al S
ize
DOF of PW-1000
18
19
20
21
-5 0 5
Focus
Actu
al S
ize
Mask Linearity of PW-1000
0
20
40
60
0 20 40 60
Mask Size (A
ctu
al S
ize(
DOF and Mask linearity
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Storage Stability
1500cp
3000cp
Viscosity
500
1000
1500
2000
0 5 10 15 20 25 30Storage days (at 23)
mP
a
Viscosity
1000
2000
3000
4000
0 5 10 15 20 25 30Storage days (at 23)
mPa
Exposure Dose
0
200
400
600
800
1000
1200
1400
0 5 10 15Storage days (at 23)
mse
c
Exposure Dose
0
200
400
600
800
1000
1200
1400
0 5 10 15Storage days (at 23)
mse
c
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0
20
40
60
80
100
0 200 400 600
cure temperature
reac
tion r
ate(%
)
Relationship between Reaction rate and Curing Temperature
33
Supplement
34
exposure
Indene carbonic acid
Photo Reaction
Insoluble in Alkaline Soluble in Alkaline
Sensitizer
Alkaline Developer
Polymer
OH
X
OH
XR R
ON2
SO2OR
COOH
SO2OR
Naphtoquinone diazido
Soluble in Alkaline
Basic Principle of Photosensitivity
Easily SolubleHardly SolublePositive tone pattern
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Toray Positive tone Photosensitive Polyimide
Negative tone Photosensitive Polyimide/Ester type
Comparison of Negative-tone and Positive-tone Polyimide Structure
COOR*
O
NH
OHN
*ROOC
NN
O
O
O
O
Polyamic acid ester
Heat
nn
Polyimide
R*NR2+H2O
CH2CH2OO
O
R*:
Polyamic acid ester
R*: CH3
COOR*
O
NH
OHN
HN
*ROOCn
H2COSi
CH3
CH3
COOR*
O
NH
O
*ROOC xy
m
Heat
R*
O
N
O
HN
H2COSi
CH3
CH3
x yN
OO
Si-unit
36
Assumed Model Adhesion between PI and EMC
Negative tone Photosensitive Polyimide/Ester type
Toray Positive tone Photosensitive PolyimidePolymerSi-unit
Curing
Epoxy MoldingCompound Direct bonding
Epoxy Molding Compound
Curing
Polymer
Indirect bonding
Si unit additives
37
Suflic acid+
Hydrogen Peroxide
FumedNitric acid
40C for 1hr. No change
RT 1hr. No change50C 10min Completely Resolved
NMP, DMF, IPA, MEK etc. Inert
Cured Film
Uncured Film(As developed)
NMP GBL Cyclo-Pentanone Ethyl-lactate Acetone IPA
Easily soluble Easily soluble SolubleEasily soluble InsolubleInsoluble
Positive resist stripper, such as TOK-106, can be removed PW-1000 before curing easily.
Stability for Chemicals
38
etchin
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
0 1 2 3 4 5 6
Treatment
Etc
hin
g th
ickn
ess
OFPR-800
PW-1000
BG-2480
etching
0.00
1.00
2.00
3.00
4.00
5.00
0 1 2 3 4 5 6
Treatment time (min.)
Etc
hin
g th
ickn
ess
OFPR-800
PW-1000
BG-2480
etching
0.00
0.20
0.40
0.60
0.80
1.00
0 2 4 6
Treatment time (min.)
Etc
hin
g th
ickn
ess
OFPR-800
PW-
BG-2480
RIE conditionApparatus Reactive Ion Etching Model RIE-IONsamcoGas O2: 50.2 SCCM
CF4/O2: 25.1/25.3 SCCMCF4: 50.0 SCCM
RF-Power RF-cont: 500FWD: 278W REF: 1WTime 1min, 3min, 5minPressure 0.60 Torr
Plasma Etch Resistance of PW-1000
39
Characteristic Curve of "PW-1000(5 m Thickness after Curing)
Exposure: i-line Stepper (GCA DSW-8000:NA=0.42)Thickness:7.8m after Prebaking on Si
0%
20%
40%
60%
80%
100%
1 10 100 1000 10000
115120125
Nor
mal
ized
Rem
aini
ngFi
lm T
hick
ness
Exposure Dose(mJ/cm2)
Prebaking Temperature
Lithographic Performance on I-Line Exposure System
40
Koyo-Thermo Systems CLH-21CD170 C30min X 60min
540 10 %OK400 C
522 20 %OK350 C
480 30 %OK320 C
5%Weight Loss Temp.Elongation
AdhesionSi, Al, SiNafter PCT 400 Hr
Curing Temp.
Effect of Curing Condition (PW-1000)