Post on 03-Oct-2020
July 2011 Doc ID 14933 Rev 4 1/13
13
STP180N10F3N-channel 100 V, 4.5 mΩ, 120 A STripFET™III Power MOSFET
TO-220
Features
Ultra low on-resistance
100% avalanche tested
Applications High current switching applications
DescriptionThis device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.
Figure 1. Internal schematic diagram
Order codes VDSS RDS(on) max.
ID
STP180N10F3 100 V 5.1 mΩ 120 A
TO-220
12
3
TAB
Table 1. Device summary
Order codes Marking Package Packaging
STP180N10F3 180N10F3 TO-220 Tube
www.st.com
Contents STP180N10F3
2/13 Doc ID 14933 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STP180N10F3 Electrical ratings
Doc ID 14933 Rev 4 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS=0) 100 V
VGS Gate-source voltage ± 20 V
ID (1)
1. Current limited by package.
Drain current (continuous) at TC = 25°C 120 A
ID (1) Drain current (continuous) at TC=100°C 110 A
IDM (2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 480 A
PTOT Total dissipation at TC = 25°C 315 W
Derating factor 2.1 W/°C
dv/dt Peak diode recovery voltage slope 20 V/ns
EAS (3)
3. Starting Tj = 25 °C, ID = 80 A, VDD = 50 V.
Single pulse avalanche energy 350 mJ
Tj
Tstg
Operating junction temperature
storage temperature- 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 0.48 °C/W
Rthj-aThermal resistance junction-ambient max
62.5 °C/W
TlMaximum lead temperature for soldering purpose
300 °C
Electrical characteristics STP180N10F3
4/13 Doc ID 14933 Rev 4
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSSDrain-source breakdown voltage (VGS= 0)
ID = 250 µA 100 V
IDSSZero gate voltage drain current (VGS = 0)
VDS= 100 V
VDS= 100 V, TC= 125°C
10
100
µA
µA
IGSSGate body leakage current
(VDS = 0)VGS = ±20 V ±200 nA
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 4 V
RDS(on)Static drain-source on resistance
VGS= 10 V, ID= 60 A 4.5 5.1 mΩ
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0-
6665
78649
-
pF
pFpF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 50 V, ID = 120 A,
VGS = 10 V
(see Figure 14)
-
114.6
38.8
31.9
-
nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
trtd(off)
tf
Turn-on delay time Rise time
Turn-off delay time
Fall time
VDD = 50 V, ID = 60 A
RG = 4.7 Ω VGS = 10 V
(see Figure 13, Figure 18)
-
25.697.1
99.9
6.9
-
nsns
ns
ns
STP180N10F3 Electrical characteristics
Doc ID 14933 Rev 4 5/13
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-120480
AA
VSD(2)
2. Pulse duration = 300µs, duty cycle 1.5%
Forward on voltage ISD=120 A, VGS=0 - 1.5 V
trrQrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120 A,
di/dt = 100 A/µs, VDD=80 V, Tj=150°C
(see Figure 15)
-
83.4
295.7
7.1
ns
nC
A
Electrical characteristics STP180N10F3
6/13 Doc ID 14933 Rev 4
2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Static drain-source on resistance Figure 7. Source-drain diode forward characteristics
ID
100
10
1
0.10.1 1 VDS(V)10
(A)
Operation in
this
area is
Limite
d by max R
DS(on)
100µs
1ms
10msTj=175°C
Tc=25°CSingle pulse
AM08615v1
10-5
10-4
10-3 10
-210
-1tp(s)
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-cδ=tp/τ
tp
τ
Single pulse
δ=0.5
280tok
ID
200
150
50
00 2 VDS(V)4
(A)
1 3 5
250
300
5V
6V
7V
VGS=10V
6 7 8
100
350
AM08616v1ID
200
150
50
00 4 VGS(V)8
(A)
2 6 9
250
300
1 3 5 7
VDS=2V
100
350
AM08617v1
RDS(on)
4.4
4.2
4.00 40 ID(A)
(Ω)
20 60
4.6
4.8
VGS=10V
10080 120
AM08619v1 VSD
0 40 ISD(A)
(V)
20 10060 800.4
0.5
0.6
0.7
0.8
0.9
1.0 TJ=-55°C
TJ=175°C
TJ=25°C
120
AM08624v1
STP180N10F3 Electrical characteristics
Doc ID 14933 Rev 4 7/13
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
Figure 12. Normalized BVDSS vs temperature
VGS
6
4
2
00 20 Qg(nC)
(V)
80
8
40 60
10
VDD=50VID=120A
100
12
120 140
AM08620v1 C
15000
10000
5000
00 40 VDS(V)
(pF)
20
20000
60
Ciss
Coss
Crss
80 100
AM08621v1
VGS(th)
0.9
0.7
0.5
0.3-75 TJ(°C)
(norm)
-25
1.1
7525 125 175
1.3
ID=250µA
AM08622v1 RDS(on)
1.1
0.9
0.7
0.5-75 TJ(°C)
(norm)
-25 7525 125 175
1.3
1.5
1.7
1.9
2.1 ID=60AVGS=10V
AM08623v1
BVDSS
-75 TJ(°C)
(norm)
-25 7525 1250.90
0.95
1.00
1.05
1.10
175
ID=1mA
AM08618v1
Test circuits STP180N10F3
8/13 Doc ID 14933 Rev 4
3 Test circuits
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF3.3µF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200µF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100µH
µF3.3 1000
µF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200µF
3.3µF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
STP180N10F3 Package mechanical data
Doc ID 14933 Rev 4 9/13
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Package mechanical data STP180N10F3
10/13 Doc ID 14933 Rev 4
Table 8. TO-220 type A mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95
STP180N10F3 Package mechanical data
Doc ID 14933 Rev 4 11/13
Figure 19. TO-220 type A drawing
0015988_typeA_Rev_S
Revision history STP180N10F3
12/13 Doc ID 14933 Rev 4
5 Revision history
Table 9. Document revision history
Date Revision Changes
01-Aug-2008 1 First version
03-Jun-2010 2– Removed package, mechanical data: D²PAK– Added new package mechanical data: H²PAK
10-Mar-2011 3 Document status promoted from preliminary data to datasheet.
11-Jul-2011 4 Removed part number in H²PAK.
STP180N10F3
Doc ID 14933 Rev 4 13/13
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