Kazuyoshi Sugiyama, SEWG meeting on Fuel retention, Garching, July 20 2010 1 Max-Planck-Institut...

Kazuyoshi Sugiyama, SEWG meeting on Fuel retention, Garching, July 20 2010 1

Max-Planck-Institut für Plasmaphysik

D retention and release behaviour of Be/C/W mixed materials

K. Sugiyama, K. Krieger, J. Roth

Max-Planck-Institut für Plasmaphysik, EURATOM Association

A. Anghel, C. Porosnicu, C.P. Lungu

National Institute for Laser, Plasma and Radiation Physics of Romania, Association EURATOM-MEdC

M.J. Baldwin, R.P. Doerner

Center for Energy Research, University of California at San Diego

(WP10-PWI-01-02-03/IPP/PS, WP10-PWI-01-02-02/MEdC/PS)

Outline

Introduction

Experimental procedure

Results

Summary and Outlook

Introduction

Wall materials in ITER

• 690 m2 Be: first wall and start-up limiter modules

• 140 m2 W: divertor dome / baffle region• 55 m2 CFC: divertor strike point areas

Material mixture Tritium retention in mixed materials

Wall baking for tritium removal in ITER

• 240 ºC: Main chamber• 350 ºC: Divertor region

Experimental approach in this task

• Preparation of ITER relevant (Be-related) mixed material samples

• Investigation of D retention and release behaviour of mixed materials

Outline

Introduction

Results

Summary and Outlook

Sample preparation

Be12W fabrication by annealing of W film on Be substrate sample at 1073K, 10 hours

Be2C fabrication by annealing of C film on Be substrate sample at 773K, 3 hours

WC fabrication by annealing of W film on graphite substrate sample at 1373K, 4 hours

• Compounds fabrication by thermal treatment of Be-W / Be-C / W-C system

• Be-W / Be-C simultaneously deposited layers

Upgrade of TVA setup for the simultaneous deposition

Depositions were successfully done with varying Be/W and Be/C ratios

Be-related depositions were prepared by Thermionic Vacuum Arc (TVA) deposition method in MEdC

Sample preparation

Be12W fabrication by annealing of W film on Be substrate sample at 1073K, 10 hours

Be2C fabrication by annealing of C film on Be substrate sample at 773K, 3 hours

WC fabrication by annealing of W film on graphite substrate sample at 1373K, 4 hours

• Compounds fabrication by thermal treatment of Be-W / Be-C / W-C system

• Be-W / Be-C simultaneously deposited layers

D implantation to prepared layers

• 200 eV D ions implantation in the High Current Ion Source in IPP-Garching

• Flux ~ 1019 D/m2, Fluences up to ~1023 D/m2

Post mortem analysis for the prepared samples

• D release behaviour analysis by Thermal Desorption Spectroscopy (TDS)

• Quantitative analysis by Nuclear Reaction Analysis using D(3He, p)4He reaction

Outline

Introduction

Results

Be-related compounds layer

W-C compound (WC) layer

Be-W simultaneously deposited layer

Be-C simultaneously deposited layer

Summary and Outlook

300 400 500 600 700 800 900

0 100 200 300 400 500 600

Temperature [K]

Temperature [C]

300 400 500 600 700 800 900

0 100 200 300 400 500 600

Temperature [K]

Temperature [C]

Be2C: Additional desorption stage in the high temperature range (> 400 ºC)

D desorption from Be-related compoundsD implantation to Be-related compound layers

Be: Primary desorption peak at 150-200 ºC

D fluence ~ 1023 D/m2 @ RT

0 1000 2000 3000 4000

perature [C

Time [s]

D release during the temperature hold at 350 ºC

The desorption flux drops down when the temperature reaches the plateau at 350 ºC.

3.125exp~

The desorption flux reaches almost background level during the 20 min. hold. 5-10 % of retained D additionally released during the temperature hold at 350 ºC.

300 400 500 600 700 800 900

0 100 200 300 400 500 600

Temperature [K]

Temperature [C]

Be2C: Additional desorption stage in the high temperature range (> 400 ºC)

300 400 500 600 700 800 900

0 100 200 300 400 500 600

Temperature [K]

Temperature [C]

Be12W: The primary desorption peak becomes less intense and broader

D desorption from Be-related compoundsD implantation to Be-related compound layers

Be: Primary desorption peak at 150-200ºC

D fluence ~ 1023 D/m2 @ RT

300 400 500 600 700 800

0 100 200 300 400 500 600

Temperature [K]

Temperature [C]

100350ºC240ºC

Be12WBe

D retained fraction in Be-related compounds

Be: ≈ 90 % of initially retained D is released at 350 ºC Compounds: 60-70 % of initially retained D is released at 350 ºC

300 400 500 600 700 800

0 100 200 300 400 500 600

Temperature [K]

Temperature [C]

Fluence ~ 1023 D/m2 @ RT

Bulk-W

D release from WC layer

300 400 500 600 700 800

0 100 200 300 400 500 600

Temperature [K]

Temperature [C]

Bulk-W WC

240ºC 350ºC

D release from WC shows primary desorption stage at 400 - 750 K

300 400 500 600 700 800

0 100 200 300 400 500 600

Temperature [K]

Temperature [C]

D release from Be-W simultaneously deposited layer

Mixing of W in Be slightly changes the D desorption behaviour. The retention amount decreases by increase of W fraction in Be.

300 400 500 600 700 800

0 100 200 300 400 500 600

Temperature [K]

Temperature [C]

W~10 at.%

W~60 at.%

240ºC 350ºC

300 400 500 600 700 800

0 100 200 300 400 500 600

Temperature [K]

Temperature [C]

W~10 at.%

W~60 at.%Bulk-W

300 400 500 600 700 800

0 100 200 300 400 500 600

Temperature [K]

Temperature [C]

300 400 500 600 700 800

0 100 200 300 400 500 600

Temperature [K]

Temperature [C]

C ~ 50 at.%

C ~ 8 at.%

D release from Be-C simultaneously deposited layer

D release behaviour totally changes in the case of C-rich mixed layer sample

300 400 500 600 700 800

0 100 200 300 400 500 600

Temperature [K]

Temperature [C]

240ºC

Be2CBe

C ~ 8 at.%

350ºC

C ~ 50 at.%

How will the wall baking work in ITER ?

Best performance will be expected for:・ removal from clean Be deposit・ the removal from Be-hydrogen

codeposition formed at “cool” areas

The efficiency is marginal for:

・ Be-W codeposited layer and compounds・ “ Be-rich” Be-C mixed deposition

Less efficiency for: ・ “ C-rich” (C conc. > 50 at.%) Be-C

mixed deposition・ the hot surface (temperature is >

350ºC during a discharge)

0 10 20 30 40 50 60 70 80

Impurity concentration in Be [%]

Be12WBe2C

Summary and Outlook

Outlook: D implantation to mixed material samples at high temperatures

- Temperature dependence of D retention in mixed material samples

Further upgrade of TVA setup for Be-W-C (ternary) simultaneous deposition

What we have done are: Mixed material sample fabrication (collaboration with MEdC)

- TVA setup successfully upgraded for the Be-W / Be-C simultaneous deposition

Investigation of D release from mixed materials for the assessment of T removal operation in ITER (wall baking at 240 ºC / 350 ºC)

Messages: D release behaviour is affected by material mixing

- Influence of C is more significant.

- T removal efficiency of 350 ºC baking decreases by material mix compared to the case of pure Be or W.

Kazuyoshi Sugiyama, SEWG meeting on Fuel retention, Garching, July 20 2010 1 Max-Planck-Institut...

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