Post on 28-Dec-2015
Invention of ALDand protection of knowledge
Tuomo Suntola
Winter-School 09 - 12, January 2012University of Helsinki, Department of Chemistry
Invention of ALD and protection of knowledge
1. Background
2. Identification of the goal and the problem
3. The solution
4. Patents / Confidential knowhow / Presentation
5. From the idea to a major processing technology
Environment for ALD innovation
1973
Confidence for industrial success
Technology background- thin film technologies- semiconductor devices
1.1.1974 Proposal for EL-flat panel development, March 1974
Instrumentarium Oy- Search for new challengesLate 1973
Invention of ALD
State of the art:- High performance demonstrated- Major problems with stability due
to the high operational voltage
Proposal for EL-flat panel development, March 1974
Buildup of ordered film structure requires ordered
processing condition
Novel thin film processing technique
is needed
Idea of sequential buildup of compounds,
June 1974
1. ALD processing of ZnS,September 1974
From idea to demonstration
Idea of sequential buildup of compounds,
June 1974
Construction of testequipment
10-4 torr
360 C
4x10-5 torr
3x10-3 torr2x10-2 torr
2 c/s
Zn S
320 C
100 C
0.4
mm0.6
0.2
00 10 20 minutes
Hexagonal ZnS: monolayer 3.13 Ån=2.36
1/3 x monolayer
From idea to patents
1977-11-15, US 4.058.430
Demonstration,September 1974
Idea, June 1974
1. ALD patent, November 1974
Method for producing compound thin films:Definition of conditions for ALD reaction to occur
Invention or a law of nature?
Oral hearing at
- US P.O., Washington- Soviet P.O., Moscow- Japan P.O., Tokyo- Germany P.O., Munich
From idea to patentsIdea, June 1974
1. ALD patent, November 1974 2. ALD patent, February 1979
Method for performing growth of compound thin films:
A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps to be separated from each other. The gas phase diffusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the surface reaction zone.
Method for producing compound thin films:Definition of conditions for ALD reaction to occur
Invention or a law of nature?
Oral hearing at
- US P.O., Washington- Soviet P.O., Moscow- Japan P.O., Tokyo- Germany P.O., Munich
1977-11-15, US 4.058.430 1983-11-01, US 4.413.022
Demonstration,September 1974
Project moved toLohja Corporation
1978
Method for performing growth of compound thin films
Method for performing growth of compound thin films
Activation of academic workand conferences on ALD
Steps in publicity
First public presentation of ALE for the growth of thin material layers: 5. International Conference on Vapor Growth and Epitaxy 1981
First public presentation of ALD-EL devices:SID 1980 conference in San Diego
Atomic Layer Epitaxy in Semiconductor Devices Applications, MRS Boston 1994
Commercial interest in EL displays
III-V ALD Activity in Japan
Commercial ALD-reactors byMicrochemistry Ltd.
ALE, Atomic Layer Epitaxy:Greek language: ”epi - taxis”
=> ”On arrangement”
2004 Picosun Oy2005 Beneq Oy
From the Idea to a Major Processing Technology
Need, solution, demonstration, basic patentsProduct prototypes, reactors for EL production
Commercial production of EL panels, Lohja / Planar
1970 1980 1990 2000 2010
Research for ALD chemistry and new applications
Microchemistry Ltd 1999 ASM Microchemistry
Explosive increase in ALD activity- research & industrial
Thank you for your attention!
Winter-School 09 - 12, January 2012University of Helsinki, Department of Chemistry