IGBTHighspeedIGBTinTrenchandFieldstoptechnology

IGW50N60H3600Vhighspeedswitchingseriesthirdgeneration

Datasheet

IndustrialPowerControl

2

IGW50N60H3Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-12

HighspeedIGBTinTrenchandFieldstoptechnologyFeatures:

TRENCHSTOPTMtechnologyoffering•verylowVCEsat•lowEMI•Verysoft,fastrecoveryanti-paralleldiode•maximumjunctiontemperature175°C•qualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant•completeproductspectrumandPSpiceModels:http://www.infineon.com/igbt/

Applications:

•uninterruptiblepowersupplies•weldingconverters•converterswithhighswitchingfrequency

G

C

E

GC

E

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIGW50N60H3 600V 50A 1.85V 175°C G50H603 PG-TO247-3

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IGW50N60H3Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-12

TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

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IGW50N60H3Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-12

Maximumratings

Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 600 V

DCcollectorcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IC 100.050.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 200.0 A

Turn off safe operating areaVCE≤600V,Tvj≤175°C,tp=1µs - 200.0 A

Gate-emitter voltage VGE ±20 V

Short circuit withstand timeVGE=15.0V,VCC≤400VAllowed number of short circuits < 1000Time between short circuits: ≥ 1.0sTvj=150°C

tSC

5

µs

PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot

333.0167.0 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+150 °C

Soldering temperature,wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

ThermalResistance

Parameter Symbol Conditions Max.Value UnitCharacteristic

IGBT thermal resistance,junction - case Rth(j-c) 0.45 K/W

Thermal resistancejunction - ambient Rth(j-a) 40 K/W

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA 600 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=50.0ATvj=25°CTvj=125°CTvj=175°C

---

1.852.102.25

2.30--

V

Gate-emitter threshold voltage VGE(th) IC=0.80mA,VCE=VGE 4.1 5.1 5.7 V

Zero gate voltage collector current ICESVCE=600V,VGE=0VTvj=25°CTvj=175°C

--

--

40.03500.0

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=50.0A - 30.0 - S

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IGW50N60H3Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-12

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

DynamicCharacteristic

Input capacitance Cies - 2960 -

Output capacitance Coes - 116 -

Reverse transfer capacitance Cres - 96 -

VCE=25V,VGE=0V,f=1MHz pF

Gate charge QGVCC=480V,IC=50.0A,VGE=15V - 315.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 13.0 - nH

Short circuit collector currentMax. 1000 short circuitsTime between short circuits: ≥ 1.0s

IC(SC)VGE=15.0V,VCC≤400V,tSC≤5µsTvj=150°C

-330

- A

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.

Parameter Symbol Conditions Unit

IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 23 - ns

Rise time tr - 37 - ns

Turn-off delay time td(off) - 235 - ns

Fall time tf - 24 - ns

Turn-on energy Eon - 1.45 - mJ

Turn-off energy Eoff - 0.91 - mJ

Total switching energy Ets - 2.36 - mJ

Tvj=25°C,VCC=400V,IC=50.0A,VGE=0.0/15.0V,rG=7.0Ω,Lσ=90nH,Cσ=60pFLσ,CσfromFig.EEnergy losses include “tail” anddiode (IKW50N60H3) reverserecovery.

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.

Parameter Symbol Conditions Unit

IGBTCharacteristic,atTvj=175°CTurn-on delay time td(on) - 23 - ns

Rise time tr - 31 - ns

Turn-off delay time td(off) - 273 - ns

Fall time tf - 24 - ns

Turn-on energy Eon - 1.42 - mJ

Turn-off energy Eoff - 1.13 - mJ

Total switching energy Ets - 2.55 - mJ

Tvj=175°C,VCC=400V,IC=50.0A,VGE=0.0/15.0V,rG=7.0Ω,Lσ=90nH,Cσ=60pFLσ,CσfromFig.EEnergy losses include “tail” anddiode (IKW50N60H3) reverserecovery.

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IGW50N60H3Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-12

Figure 1. Collectorcurrentasafunctionofswitchingfrequency(Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V,rG=7Ω)

f,SWITCHINGFREQUENCY[kHz]

IC,C

OLLECTO

RCURRENT[A]

1 10 100 10000

20

40

60

80

100

120

140

TC=80°

TC=110°

TC=80°

TC=110°

Figure 2. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tj≤175°C;VGE=15V)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

1 10 100 10000.1

1

10

100

tp=1µs

10µs

50µs

100µs

200µs

500µs

DC

Figure 3. Powerdissipationasafunctionofcasetemperature(Tj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,POWERDISSIPATION[W

]

25 50 75 100 125 150 1750

50

100

150

200

250

300

350

Figure 4. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLECTO

RCURRENT[A]

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

90

100

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IGW50N60H3Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-12

Figure 5. Typicaloutputcharacteristic(Tj=25°C)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

0 1 2 3 4 5 60

25

50

75

100

125

150

175

200

VGE=20V

17V

15V

13V

11V

9V

7V

5V

Figure 6. Typicaloutputcharacteristic(Tj=175°C)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

0 1 2 3 4 5 60

25

50

75

100

125

150

175

200

VGE=20V

17V

15V

13V

11V

9V

7V

5V

Figure 7. Typicaltransfercharacteristic(VCE=20V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

5 6 7 8 9 10 11 120

50

100

150

200Tj=25°CTj=175°C

Figure 8. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tj,JUNCTIONTEMPERATURE[°C]

VCE(sat) ,COLLECTO

R-EMITTE

RSATU

RATION[V

]

0 25 50 75 100 125 150 1751.0

1.5

2.0

2.5

3.0

3.5IC=25AIC=50AIC=100A

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IGW50N60H3Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-12

Figure 9. Typicalswitchingtimesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,rG=7Ω,testcircuitinFig.E)

IC,COLLECTORCURRENT[A]

t,SWITCHINGTIMES[ns]

10 20 30 40 50 60 70 80 90 10010

100

td(off)

tftd(on)

tr

Figure 10. Typicalswitchingtimesasafunctionofgateresistor(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,IC=50A,testcircuitinFig.E)

rG,GATERESISTOR[Ω]

t,SWITCHINGTIMES[ns]

0 5 10 15 20 2510

100

td(off)

tftd(on)

tr

Figure 11. Typicalswitchingtimesasafunctionofjunctiontemperature(ind.load,VCE=400V,VGE=15/0V,IC=50A,rG=7Ω,testcircuitinFig.E)

Tj,JUNCTIONTEMPERATURE[°C]

t,SWITCHINGTIMES[ns]

25 50 75 100 125 150 17510

100

td(off)

tftd(on)

tr

Figure 12. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0,8mA)

Tj,JUNCTIONTEMPERATURE[°C]

VGE(th) ,GATE

-EMITTE

RTHRESHOLD

VOLTAGE[V

]

0 25 50 75 100 125 150 1752.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0typ.min.max.

9

IGW50N60H3Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-12

Figure 13. Typicalswitchingenergylossesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,rG=7Ω,testcircuitinFig.E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENERGYLOSSES[m

J]

10 20 30 40 50 60 70 80 90 1000

1

2

3

4

5

6

7

8Eoff

Eon

Ets

Figure 14. Typicalswitchingenergylossesasafunctionofgateresistor(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,IC=50A,testcircuitinFig.E)

rG,GATERESISTOR[Ω]

E,S

WITCHINGENERGYLOSSES[m

J]

2 6 10 14 18 220

1

2

3

4

5Eoff

Eon

Ets

Figure 15. Typicalswitchingenergylossesasafunctionofjunctiontemperature(indload,VCE=400V,VGE=15/0V,IC=50A,rG=7Ω,testcircuitinFig.E)

Tj,JUNCTIONTEMPERATURE[°C]

E,S

WITCHINGENERGYLOSSES[m

J]

25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0Eoff

Eon

Ets

Figure 16. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(ind.load,Tj=175°C,VGE=15/0V,IC=50A,rG=7Ω,testcircuitinFig.E)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

E,S

WITCHINGENERGYLOSSES[m

J]

200 250 300 350 400 4500.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5Eoff

Eon

Ets

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IGW50N60H3Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-12

Figure 17. Typicalgatecharge(IC=50A)

QGE,GATECHARGE[nC]

VGE,G

ATE

-EMITTE

RVOLTAGE[V

]

0 50 100 150 200 250 300 3500

2

4

6

8

10

12

14

16120V480V

Figure 18. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

C,C

APACITANCE[pF]

0 10 20 3010

100

1000Cies

Coes

Cres

Figure 19. Typicalshortcircuitcollectorcurrentasafunctionofgate-emittervoltage(VCE≤400V,startatTj=25°C)

VGE,GATE-EMITTERVOLTAGE[V]

IC(SC) ,SHORTCIRCUITCOLLECTO

RCURRENT[A]

10 12 14 16 18 20150

250

350

450

550

650

750

Figure 20. Shortcircuitwithstandtimeasafunctionofgate-emittervoltage(VCE≤400V,startatTj≤150°C)

VGE,GATE-EMITTERVOLTAGE[V]

tSC,S

HORTCIRCUITW

ITHSTA

NDTIME[µs]

10 11 12 13 14 150

3

6

9

12

15

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IGW50N60H3Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-12

Figure 21. IGBTtransientthermalimpedance(D=tp/T)

tp,PULSEWIDTH[s]

ZthJC,TRANSIENTTH

ERMALIMPEDANCE[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

17.0E-34.4E-5

20.037363781.0E-4

30.092050277.2E-4

40.12995748.3E-3

50.18354610.07425315

12

IGW50N60H3Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-12

PG-TO247-3

13

IGW50N60H3Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-12

t

a

a

b

b

td(off) tf trtd(on)

90% IC

10% IC

90% IC

10% IC

t

90% VGE

vGE(t)

t

t

iC(t)

vCE(t)

90% VGE

vGE(t)

t

t

iC(t)

vCE(t)

tt1 t4

2% IC

10% VGE

2% VCE

t2 t3

14

IGW50N60H3Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-12

RevisionHistory

IGW50N60H3

Revision:2014-03-12,Rev.2.2Previous Revision

Revision Date Subjects (major changes since last revision)

1.1 2010-02-01 -

1.2 2010-07-26 Preliminary datasheet

2.1 2013-12-10 New value ICES max limit at 175°C

2.2 2014-03-12 Max ratings Vce, Tvj ≥ 25°C

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