INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE

IRGB4062DPbFIRGP4062DPbF

1 www.irf.com02/24/06

E

G

n-channel

CVCES = 600V

IC = 24A, TC = 100°C

tSC ≥ 5µs, TJ(max) = 175°C

VCE(on) typ. = 1.65V

Features• Low VCE (ON) Trench IGBT Technology• Low switching losses• Maximum Junction temperature 175 °C• 5 µS short circuit SOA• Square RBSOA• 100% of the parts tested for 4X rated current (ILM)• Positive VCE (ON) Temperature co-efficient• Ultra fast soft Recovery Co-Pak Diode• Tight parameter distribution• Lead Free Package

Benefits• High Efficiency in a wide range of applications• Suitable for a wide range of switching frequencies due to

Low VCE (ON) and Low Switching losses• Rugged transient Performance for increased reliability• Excellent Current sharing in parallel operation• Low EMI

G C EGate Collector Emitter

Absolute Maximum RatingsParameter Max. Units

VCES Collector-to-Emitter Voltage 600 V

IC @ TC = 25°C Continuous Collector Current 48

IC @ TC = 100°C Continuous Collector Current 24

ICM Pulse Collector Current 96

ILM Clamped Inductive Load Current 96 A

IF @ TC = 25°C Diode Continous Forward Current 48

IF @ TC = 100°C Diode Continous Forward Current 24

IFM Diode Maximum Forward Current 96

VGE Continuous Gate-to-Emitter Voltage ±20 V

Transient Gate-to-Emitter Voltage ±30

PD @ TC = 25°C Maximum Power Dissipation 250 W

PD @ TC = 100°C Maximum Power Dissipation 125

TJ Operating Junction and -55 to +175

TSTG Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal ResistanceParameter Min. Typ. Max. Units

RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB ––– ––– 0.60

RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-220AB ––– ––– 1.53

RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC ––– ––– 0.65 °C/W

RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-247AC ––– ––– 1.62

RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 –––

RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 –––

GC

E

TO-247ACTO-220AB

GC

E

CC

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Notes: VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10Ω.

This is only applied to TO-220AB package. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)Parameter Min. Typ. Max. Units Conditions Ref.Fig

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA CT6

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C) CT6

— 1.60 1.95 IC = 24A, VGE = 15V, TJ = 25°C 5,6,7

VCE(on) Collector-to-Emitter Saturation Voltage — 2.03 — V IC = 24A, VGE = 15V, TJ = 150°C 9,10,11

— 2.04 — IC = 24A, VGE = 15V, TJ = 175°C

VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 700µA 9, 10,

∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) 11, 12

gfe Forward Transconductance — 17 — S VCE = 50V, IC = 24A, PW = 80µs

ICES Collector-to-Emitter Leakage Current — 2.0 25 µA VGE = 0V, VCE = 600V

— 775 — VGE = 0V, VCE = 600V, TJ = 175°C

VFM Diode Forward Voltage Drop — 1.80 2.6 V IF = 24A 8

— 1.28 — IF = 24A, TJ = 175°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)Parameter Min. Typ. Max. Units Ref.Fig

Qg Total Gate Charge (turn-on) — 50 75 IC = 24A 24

Qge Gate-to-Emitter Charge (turn-on) — 13 20 nC VGE = 15V CT1

Qgc Gate-to-Collector Charge (turn-on) — 21 31 VCC = 400V

Eon Turn-On Switching Loss — 115 201 IC = 24A, VCC = 400V, VGE = 15V CT4

Eoff Turn-Off Switching Loss — 600 700 µJ RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C

Etotal Total Switching Loss — 715 901 Energy losses include tail & diode reverse recovery

td(on) Turn-On delay time — 41 53 IC = 24A, VCC = 400V, VGE = 15V CT4

tr Rise time — 22 31 ns RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C

td(off) Turn-Off delay time — 104 115

tf Fall time — 29 41

Eon Turn-On Switching Loss — 420 — IC = 24A, VCC = 400V, VGE=15V 13, 15

Eoff Turn-Off Switching Loss — 840 — µJ RG=10Ω, L=100µH, LS=150nH, TJ = 175°C CT4

Etotal Total Switching Loss — 1260 — Energy losses include tail & diode reverse recovery WF1, WF2

td(on) Turn-On delay time — 40 — IC = 24A, VCC = 400V, VGE = 15V 14, 16

tr Rise time — 24 — ns RG = 10Ω, L = 200µH, LS = 150nH CT4

td(off) Turn-Off delay time — 125 — TJ = 175°C WF1

tf Fall time — 39 — WF2

Cies Input Capacitance — 1490 — pF VGE = 0V 23

Coes Output Capacitance — 129 — VCC = 30V

Cres Reverse Transfer Capacitance — 45 — f = 1.0Mhz

TJ = 175°C, IC = 96A 4

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2

Rg = 10Ω, VGE = +15V to 0V

SCSOA Short Circuit Safe Operating Area 5 — — µs VCC = 400V, Vp =600V 22, CT3

Rg = 10Ω, VGE = +15V to 0V WF4

Erec Reverse Recovery Energy of the Diode — 621 — µJ TJ = 175°C 17, 18, 19

trr Diode Reverse Recovery Time — 89 — ns VCC = 400V, IF = 24A 20, 21

Irr Peak Reverse Recovery Current — 37 — A VGE = 15V, Rg = 10Ω, L =200µH, Ls = 150nH WF3

Conditions

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Fig. 1 - Maximum DC Collector Current vs.Case Temperature

Fig. 2 - Power Dissipation vs. CaseTemperature

Fig. 3 - Forward SOATC = 25°C, TJ ≤ 175°C; VGE =15V

Fig. 4 - Reverse Bias SOATJ = 175°C; VGE =15V

Fig. 5 - Typ. IGBT Output CharacteristicsTJ = -40°C; tp = 80µs

Fig. 6 - Typ. IGBT Output CharacteristicsTJ = 25°C; tp = 80µs

0 20 40 60 80 100 120 140 160 180

TC (°C)

0

5

10

15

20

25

30

35

40

45

50I C

(A

)

0 20 40 60 80 100 120 140 160 180

TC (°C)

0

50

100

150

200

250

300

Pto

t (W

)

10 100 1000

VCE (V)

1

10

100

1000

I C (

A)

0 1 2 3 4 5 6 7 8

VCE (V)

0

10

20

30

40

50

60

70

80

90

I CE

(A

)

VGE = 18V

VGE = 15VVGE = 12VVGE = 10VVGE = 8.0V

0 1 2 3 4 5 6 7 8

VCE (V)

0

10

20

30

40

50

60

70

80

90

I CE

(A

)

VGE = 18V

VGE = 15VVGE = 12VVGE = 10VVGE = 8.0V

1 10 100 1000 10000

VCE (V)

0.1

1

10

100

1000

I C (

A)

1msec

10µsec

100µsec

Tc = 25°CTj = 175°CSingle Pulse

DC

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Fig. 7 - Typ. IGBT Output CharacteristicsTJ = 175°C; tp = 80µs

Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs

Fig. 10 - Typical VCE vs. VGETJ = 25°C

Fig. 11 - Typical VCE vs. VGETJ = 175°C

Fig. 12 - Typ. Transfer CharacteristicsVCE = 50V; tp = 10µs

Fig. 9 - Typical VCE vs. VGETJ = -40°C

0 1 2 3 4 5 6 7 8

VCE (V)

0

10

20

30

40

50

60

70

80

90I C

E (

A)

VGE = 18V

VGE = 15VVGE = 12VVGE = 10VVGE = 8.0V

0.0 1.0 2.0 3.0

VF (V)

0

20

40

60

80

100

120

I F (

A)

-40°c25°C

175°C

5 10 15 20

VGE (V)

0

2

4

6

8

10

12

14

16

18

20

VC

E (

V) ICE = 12A

ICE = 24A

ICE = 48A

0 5 10 15

VGE (V)

0

20

40

60

80

100

120

I CE

(A

)

TJ = 25°C

TJ = 175°C

5 10 15 20

VGE (V)

0

2

4

6

8

10

12

14

16

18

20

VC

E (

V) ICE = 12A

ICE = 24A

ICE = 48A

5 10 15 20

VGE (V)

0

2

4

6

8

10

12

14

16

18

20

VC

E (

V) ICE = 12A

ICE = 24A

ICE = 48A

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Fig. 13 - Typ. Energy Loss vs. ICTJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V

Fig. 14 - Typ. Switching Time vs. ICTJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V

Fig. 15 - Typ. Energy Loss vs. RGTJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V

Fig. 16 - Typ. Switching Time vs. RGTJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V

Fig. 17 - Typ. Diode IRR vs. IFTJ = 175°C

Fig. 18 - Typ. Diode IRR vs. RGTJ = 175°C

0 10 20 30 40 50 60

IC (A)

0

200

400

600

800

1000

1200

1400

1600

1800E

nerg

y (µ

J) EOFF

EON

10 20 30 40 50

IC (A)

1

10

100

1000

Sw

ichi

ng T

ime

(ns)

tR

tdOFF

tF

tdON

0 25 50 75 100 125

Rg (Ω)

0

200

400

600

800

1000

1200

1400

1600

Ene

rgy

(µJ)

EOFF

EON

0 25 50 75 100 125

RG (Ω)

10

100

1000

Sw

ichi

ng T

ime

(ns)

tR

tdOFF

tF

tdON

0 10 20 30 40 50 60

IF (A)

10

15

20

25

30

35

40

I RR

(A

)

RG = 10Ω

RG = 22Ω

RG = 47Ω

RG = 100Ω

0 25 50 75 100 125

RG (Ω)

5

10

15

20

25

30

35

40

45

I RR

(A

)

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Fig. 19 - Typ. Diode IRR vs. diF/dtVCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C

Fig. 20 - Typ. Diode QRR vs. diF/dtVCC = 400V; VGE = 15V; TJ = 175°C

Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz

Fig. 24 - Typical Gate Charge vs. VGE ICE = 24A; L = 600µH

Fig. 21 - Typ. Diode ERR vs. IFTJ = 175°C

Fig. 22 - VGE vs. Short Circuit TimeVCC = 400V; TC = 25°C

0 500 1000 1500

diF /dt (A/µs)

5

10

15

20

25

30

35

40

45I R

R (

A)

0 500 1000 1500

diF /dt (A/µs)

500

1000

1500

2000

2500

3000

3500

4000

QR

R (

µC)

10Ω

22Ω

100Ω 47Ω

12A

24A

6.0A

0 10 20 30 40 50 60

IF (A)

0

200

400

600

800

1000

Ene

rgy

(µJ)

RG = 10Ω

RG = 22Ω

RG = 47Ω

RG = 100Ω

8 10 12 14 16 18

VGE (V)

4

6

8

10

12

14

16

Tim

e (

µs)

40

80

120

160

200

240

280

Current (A

)

0 20 40 60 80 100

VCE (V)

10

100

1000

10000

Cap

acita

nce

(pF

) Cies

Coes

Cres

0 5 10 15 20 25 30 35 40 45 50 55

Q G, Total Gate Charge (nC)

0

2

4

6

8

10

12

14

16

VG

E, G

ate-

to-E

mitt

er V

olta

ge (

V) VCES = 300V

VCES = 400V

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Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-220AB

Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-220AB

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1T

herm

al R

espo

nse

( Z

thJC

) 0.20

0.10

D = 0.50

0.020.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)0.2329 0.000234

0.3631 0.007009

τJ

τJ

τ1

τ1τ2

τ2

R1

R1R2

R2

ττC

Ci i/RiCi= τi/Ri

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

10

The

rmal

Res

pons

e (

Z th

JC )

0.200.10

D = 0.50

0.020.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)0.476 0.000763

0.647 0.003028

0.406 0.023686

τJ

τJ

τ1

τ1τ2

τ2 τ3

τ3

R1

R1 R2

R2 R3

R3

ττC

Ci i/RiCi= τi/Ri

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Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247AC

Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

The

rmal

Res

pons

e (

Z th

JC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)0.2782 0.000311

0.3715 0.006347

τJ

τJ

τ1

τ1τ2

τ2

R1

R1 R2

R2

ττC

Ci i/RiCi= τi/Ri

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

10

The

rmal

Res

pons

e (

Z th

JC )

0.200.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)0.693 0.001222

0.621 0.005254

0.307 0.038140

τJ

τJ

τ1

τ1τ2

τ2 τ3

τ3

R1

R1 R2

R2 R3

R3

ττC

Ci i/RiCi= τi/Ri

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1K

VC CD UT

0

L

L

Rg

80 V DUT480V

DC

4x

DUT

360V

L

Rg

VCC

diode clamp /DU T

DU T /D RIVER

- 5V

Rg

VCCDUT

R =VCCICM

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.5 - Resistive Load Circuit

C force

400µH

G force DUT

D1 10KC sense

0.0075µ

E sense

E force

Fig.C.T.6 - BVCES Filter Circuit

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Fig. WF3 - Typ. Diode Recovery Waveform@ TJ = 175°C using Fig. CT.4

Fig. WF1 - Typ. Turn-off Loss Waveform@ TJ = 175°C using Fig. CT.4

Fig. WF2 - Typ. Turn-on Loss Waveform@ TJ = 175°C using Fig. CT.4

Fig. WF4 - Typ. S.C. Waveform@ TJ = 25°C using Fig. CT.3

-100

0

100

200

300

400

500

-0.50 0.00 0.50 1.00 1.50 2.00

Time(µs)

VC

E (V

)

-5

0

5

10

15

20

25

EOFF Loss

5% VCE

5% ICE

90% ICE

tf

-100

0

100

200

300

400

500

11.70 11.80 11.90 12.00 12.10

Time (µs)

VC

E (

V)

-10

0

10

20

30

40

50

EON

TEST C90% test

10% test

5% VCE

tr

-25

-20

-15

-10

-5

0

5

10

15

20

25

-0.05 0.05 0.15

time (µS)

IRR

(A)

Peak

IRR

QRR

tRR

10%PeakIRR

-100

0

100

200

300

400

500

-5.00 0.00 5.00 10.00

time (µS)

VC

E (V

)

-50

0

50

100

150

200

250

ICE

(A)

VCE

ICE

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TO-220AB package is not recommended for Surface Mount Application.

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 02/06

Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

TO-247AC package is not recommended for Surface Mount Application.

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