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Letter
Expeditious Stochastic Calculation of Random-Phase ApproximationEnergies for Thousands of Electrons in 3 Dimensions
Daniel Neuhauser, Eran Rabani, and Roi BaerJ. Phys. Chem. Lett., Just Accepted Manuscript • DOI: 10.1021/jz3021606 • Publication Date (Web): 08 Mar 2013
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1
Expeditious Stochastic Calculation of Random-Phase Approximation Ener-gies for Thousands of Electrons in 3 Dimensions
Daniel Neuhauser†, Eran Rabani‡ and Roi Baer
† Department of Chemistry and Biochemistry, University of California, Los Angeles CA 90095, USA. ‡ School of Chemistry, The Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 69978, Israel. Fritz Haber Center for Molecular Dynamics, Institute of Chemistry, Hebrew University, Jerusalem 91904 Israel.
ABSTRACT: A fast method is developed for calculating the Random-Phase-Approximation (RPA) correlation energy for density func-
tional theory. The correlation energy is given by a trace over a projected RPA response matrix and the trace is taken by a stochastic approach
using random perturbation vectors. For a fixed statistical error in the total energy per electron the method scales at most, quadratically with
the system size, however, in practice, due to self-averaging, requires less statistical sampling as the system grows and the performance is
close to linear scaling. We demonstrate the method by calculating the RPA correlation energy for cadmium selenide and silicon nanocrystals
with over 1500 electrons. We find that the RPA correlation energies per electron are largely independent of the nanocrystal size. In addition,
we show that a correlated sampling technique enables calculation of the energy difference between two slightly distorted configurations with
scaling and a statistical error similar to that of the total energy per electron.
Local and semi-local correlation functionals of Kohn-Sham
(KS) density functional theory (DFT) fail to describe long-
range van der Waals interactions and other types of dynam-
ical screening effects. ADDIN EN.CITE One route for over-
coming these deficiencies is RPA theory1, 3-6 based on the
KS-DFT adiabatic connection formalism7-9 in combination
with the fluctuation dissipation theorem.10 In recent years this
approach, especially when combined with exact exchange,
was used successfully for treating various ailments of KS-
DFT in molecular and condensed matter systems5, 6, 11-18.
The greatest hurdle facing widespread use of RPA is its ex-
ceedingly high computational cost. Several approaches have
been developed 5, 6, 13, 19, 20 for reducing the naïve ( ) RPA
scaling to ( ), ( is a measure of system size); however,
this is still expensive. The problem is aggravated when plane-
waves or real-space grids are used, suffering from the huge
number of unoccupied states and the strong reliance of the
RPA energy on the unoccupied energies.21-23
In the present letter, we develop a stochastic sampling meth-
od for estimating the RPA correlation energy. Related sam-
pling techniques have been recently developed by us for es-
timating the rate of multiexciton generation in nanocrystals
(NCs),24 for a linear scaling calculation of the exchange ener-
gy,25 and for overcoming the computational bottleneck in
Møller-Plesset second order perturbation theory (MP2).26
RPA, applied on top of a grid or plane waves calculation,
starts from the KS or generalized KS Hamiltonian which
can be applied to any wavefunction in linear scaling.27 For a
closed-shell system of electrons on a grid/basis of size ,
the lowest KS orbitals ( ) of are occupied and -
are unoccupied.28 The RPA correlation energy can be written
as5
∑ ( - )
, where are eigenvalues
of “ ” defined by:
( ) (
) ( ) (
) (1)
and
(2)
where ∫ ( ) (
) ( ) ( )
| - | are the Cou-
lomb integrals, is a coupling strength parameter ( is
full-strength Coulomb coupling and is the non-
interacting limit), and - is the difference of eigen-
values of . Usually, all are real; however , although
having pure imaginary eigenvalues, is a real matrix operating
on real vectors ( ). Note that are also the eigenvalues of
the matrix (
- - ) appearing in standard RPA treatments.5
An alternative formulation starts from the expression:5
[ ( ) ( ( )
)
] (3)
where ( )
∑ ( )
. However, the calculation of
( ) is still prohibitive for large systems because of the high
cost of diagonalization of the ( - ) ( - ) matrix
(in grid representations and easily reach and
respectively).
Our formulation is based on linear-response time-dependent
Hartree approach.29, 30 is still given by Eq. (3) but ( )
is replaced by the following trace: 29, 30
( ) [ ( ( ))] (4)
Here ( ) ( ), where ( ) is the Heaviside step func-
tion, which we approximate as ( )
(- ); is a lin-
ear operator, revealed when linearizing the time-dependent
KS equations (see refs. 14 and 30 for details):
( ) (
( )
[ ] ( ) ) (5)
( ) and ( ) are functions, originally describing the time-
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dependent Hartree response of the -th KS orbital ( ), but
are used here as stochastic perturbations as detailed below.
[ ]( ) ∫ ( )
| - | is the Hartree perturbation poten-
tial depending linearly on the ’s via
( ) ∑ ( ) ( )
(6)
One can expand in the basis of the KS orbitals and obtain
its matrix having positive imaginary
eigenvalues and an equivalent negative set. ( - ) ei-
genvalues can be classified as “occupied-unoccupied” transi-
tions , and eigenvalues are occupied-occupied transi-
tions . Obviously, the dimensions of and differ, as the
latter describes only occupied-unoccupied transitions. None-
theless, within the occupied-unoccupied space the matrices
and eigenvalues are identical:31
(7)
( ) in Eq. (4) is computed in two principal steps:
1) The trace is replaced by an average (denoted by curly
brackets) over random perturbation vectors ( ):
( ) {⟨( )| ( ( ))| (
)⟩} (8)
( ) is shorthand notation for the entire set of ’s and
’s.
2) The selection of the random vector and is done by
generating two vectors composed of random complex
phases at each grid point : ( )
( )
where is the grid spacing and ( ) is a random num-
ber between 0 and . Then one sets:
( ) ( ) ( )⟨ | ⟩ ( )⟨ | ⟩ (9)
3) The action of the operator ( ) on ( ) is performed
using an iterative modified Chebyshev polynomial expan-
sion approach, so that:
( ) ∑
(10)
where
{⟨( )| ( ( )
( ))⟩} (11)
are the modified Chebyshev residues, and ( ( )
( )) are cal-
culated iteratively:
( ( )
( ))
( ( )
( )) (
( )
( )) ( ) (12)
with
( ( )
( )) (
) (
( )
( ))
( ( )
( )) (13)
Note that is a real operator (Eq. (5)) so all calculations are
done on real functions.
( - ) is half the eigenval-
ue range of . The are numerical coefficients obtained as
follows: First, prepare a series of length ,
( (
)), - and then set
( ) (for ) where { } are the discrete Fou-
rier transform of { }. The series length is chosen large
enough so that the sum in Eq. (10) converges, i.e. | | is
smaller than a prescribed tolerance.
We rely on correlated sampling to reduce the statistical error
in computing . is computed for 3 values of
and – (with - ) using the same random number
seeds, and then the RPA energy is estimated by:
[ ( )
∑ (
) ( )
] (14)
Figure 1: The error of the stochastic estimate for the RPA energy per
electron with respect to the exact value (black curve) and the vari-
ance (red curve) as function of stochastic iterations for SiH4.
Table 1: Parameters for the CdSe nanocrystals NCs. Shown are the
number of Cd ( ) and Se ( ) atoms, electrons ( ), NC diame-
ter ( ), the numerical effort involved in operating with in a pertur-
bation vector
, where is the number of grid-
points and the occupied-unoccupied energy gap .
D (nm) ( )
19
We now demonstrate the performance of the stochastic meth-
od by applying it to calculate the RPA correlation energies of
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spherical cadmium-selenide (CdSe) and hydrogen passivated
silicon NCs, where the Hamiltonian is constructed from a
semiempirical pseudopotential model.32, 33 The occupied
states of the NCs were obtained using the filter diagonaliza-
tion technique34 with the implementation described in Refs. 32, 35. We used
- for approximating the step function
( ) and (see discussion of Figure 4), and
, slightly larger than half the maximal eigenvalue
range for both NCs. Various features of the NCs are summa-
rized in Table 1 and 2.
Table 2: Same as Table 1, but for hydrogen passivated silicon NCs.
D (nm) ( )
As a test, we compared the stochastic estimate and a full
summation calculation of the RPA energy for on a
point grid (see Figure 1). The deviation of the sto-
chastic approach from the exact value is within the statistical
variance for nearly all stochastic iterations. We found that for
stochastic iterations the stochastic estimate deviates
by ~ meV from the full summation value. As explained
below, the number of required stochastic iterations decreases
considerably (for a fixed error per electron) as the size of the
system increases.
Figure 2: RPA (blue) and MP2 (red) correlation energies per elec-
tron vs. the number of electrons , for silicon (top) and CdSe (bot-
tom) NCs. Insets show the statistical errors in the RPA energies,
normalized to 1000 stochastic iterations.
Figure 2 shows the RPA correlation energies for CdSe and
silicon NCs up to electrons along with a comparison
to MP2 energies obtained using the Neuhauser-Rabani-Baer
(NRB) method.26 The RPA correlation energy depends weak-
ly on the NC size in contrast to that of MP2. This is because
the NC gaps decrease with system size and MP2 energies are
sensitive to small gaps (diverging for metals). The RPA ener-
gy of silicon is somewhat above that of CdSe, and is within
the LDA bulk limit21 range of -
.
The insets of Figure 2 show the corresponding statistical er-
rors normalized to 1000 stochastic iterations. The errors de-
crease when the number of electrons in the system increases.
This shows that the algorithm profits from statistical self-
averaging. The statistical error of the CdSe NCs is approxi-
mately twice smaller than that for silicon despite having simi-
lar gaps for the same NC size. This suggests that the statisti-
cal errors are not trivially correlated with the gap.
Figure 3 shows the total CPU time for calculations that yield
a statistical error of meV per electron. The method
scales, at most, quadratically with system size but in practice,
due to self-averaging, requires considerably less statistical
sampling as the system grows and the resulting performance
is close to linear scaling. Furthermore, in comparison, the
RPA CPU time for the same statistical error is an order of
magnitude smaller than the CPU time required for the MP2
calculations. Regarding memory requirements, for the RPA
scales quadratically with system size (17GB for the largest
silicon NC) and linearly for MP2.
Figure 3: The CPU times for achieving a statistical error of meV per electron for the RPA and MP2 calculations of CdSe
NCs.
In some cases, the Chebyshev interpolation suffers from in-
stabilities. This is shown in the Figure 4 for the NC
where we plot the RPA energy estimate as function of the
length of the Chebyshev expansion. The results (dashed line)
clearly diverge as the Chebyshev expansion length grows. To
alleviate this problem we project out from ( )
and
( )
, after each operation of , the occupied orbitals ,
- where is a small system-dependent
integer.
Figure 4 shows the RPA correlation energy as a function of
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the Chebyshev interpolation order ( ). For the RPA
energy with ( ) and without projection are nearly iden-
tical (to within statistical error). For higher interpolation or-
ders than shown the RPA correlation energy without projec-
tion diverges while the projected one remains stable. For
the Chebyshev polynomial visibly diverges already
when the order is larger than 300 but becomes stable when
projection is used with . Here too, the difference be-
tween the projected and non-projected correlation energies
(before divergence) is smaller than the statistical fluctuations,
which is large in the diverged result due to the small number
of stochastic iterations done.
Figure 4: The RPA correlation energy as function of the length of
the Chebyshev interpolation polynomial for silicon NCs. Dashed
lines are the results without projection while the solid lines are for
for and for .
The present method is not only useful to calculate the RPA
energy per electron. In fact, it can also be used to obtain, for
example, the RPA corrections to chemical reaction energy
profiles or to adsorption energies. In this respect, we have
developed an approach, based on a combination of adiabatic
evolution and correlated sampling to calculate energy differ-
ences between two structural configurations.36 Preliminary
results for (enabling comparison to the full summation
result) and , moving one atom by 0.01 , indicate that
the statistical error of the energy gradient (i.e., the force due
the RPA energy) is of the comparable to the statistical error
of the total RPA energy per electron (much smaller than the
statistical error in the total energy). For and the
statistical error per stochastic iteration37 in the RPA energy is
and , respectively, compared to the statistical
error in the RPA energy per electron and ,
respectively.
Summarizing, we have presented a new stochastic approach
for calculating RPA energies for large electronic systems of
exceptional size. The method scales formally as ( ) in
terms of memory and CPU time but due to self-averaging has
a near-linear scaling CPU time performance. We calculated
the RPA correlation energy for CdSe and silicon NCs up to
diameters of with over electrons. The stochastic
approach developed here bloats, by orders of magnitude, the
size of systems that can be treated using RPA theory.
DN was supported by the DOE MEEM center, award DE-
SC0001342. RB was supported by the US-Israel Binational
Foundation (BSF). RB and ER gratefully thank the Israel
Science Foundation, grant numbers 1020/10 and 611/11, re-
spectively.
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24 (2012). 27 The numerical effort of the stochastic RPA calculation scales
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function in a linear scaling way. 28 We denote occupied states by indices i,j,k,l=1,..,N and
unoccupied states by a,b,c,d=N+1,…,M; the indices
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publication. 37 To estimate the statistical error for I stocahstic iterations divide
by the square root of I.
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