e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague1

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Phenix NCC Silicon Pad Sensorsproduced in ON Semiconductor

Lukas Tomasek, Michal Tomasek, Vaclav Vrba

Institute of Physics, Prague

Michael Finger, Miroslav Finger

Charles University, Prague

Michael Merkin at al.

Moscow State University

Edward Kistenev, Edward O’Brien

Brookhaven National Laboratory

Richard Seto

University of California at Riverside

Matthias Grosse Perdekamp

University of Illinois at Urbana-Champaign

e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague2

Layout of components on the wafer

e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague3

I-V and C-V on single diodes

e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague4

I-V curves for 4x4 pad array

e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague5

I-V curves for 4x4 pad array

e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague6

Reverse current long term stability

e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague7

I-V curves for 4x4 pad array

e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague8

Summary

• 8 wafers with pad sensors of Phenix design with integrated bias resistors have been fabricated in ON Semiconductor;

• First measurements indicate very good quality of sensors and also of integrated resistors;

• For future production QA criteria and measurement procedure shall be elaborated. It will help also better define and accent our needs;

• At the moment ONS is finishing processing of the second part of wafers (out of 24 raw wafers provided by Misha Merkin);

• It is highly desirable to send to ONS a.s.a.p. new wafers 525 µm thick purchased from Wacker Siltronic for further production.