Post on 07-Apr-2018
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2SK3934
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3934
Switching Regulator Applications
Low drain-sour ce ON resista nce: R DS (ON) = 0.23 (typ.) High forward tr ansfer adm ittance: | Yfs | =8.2 S (typ.) Low leakage curr ent : IDSS = 100 A (VDS = 500 V) Enha ncement-mode: V th = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 500 V
Drain-gate voltage (RGS= 20 k) VDGR 500 V
Gate-source voltage VGSS 30 V
DC (Note 1) ID 15
Drain current Pulse (t = 1 ms)(Note 1)
IDP 60A
Drain power dissipation (Tc = 25C) PD 50 W
Single pulse avalanche energy(Note 2)
EAS 1.08 J
Avalanche current IAR 15 A
Repetitive avalanche energy (Note 3) EAR 5.0 mJ
Channel temperature Tch 150 C
Storage temperature range Tstg -55~150 C
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 2.5 C/W
Thermal resistance, channel to ambient Rth ( ch-a) 62.5 C/W
Note 1: Please use devices on conditions that the channel temperature is below 150C.
Note 2: VDD= 90 V, Tch= 25C(initial), L = 8.16mH, IAR= 15 A, RG= 25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
1: Gate2: Drain3: Source
JEDEC ?
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2
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2SK3934
Electrical Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS=25 V, V DS= 0 V 10 A
Gate-source breakdown voltage V (BR) GSS IG=10 A, VDS= 0 V 30 V
Drain cut-off current IDSS VDS= 500 V, V GS= 0 V 100 ADrain-source breakdown voltage V (BR) DSS ID= 10 mA, VGS= 0 V 500 V
Gate threshold voltage Vth VDS= 10 V, ID= 1 mA 2.0 4.0 V
Drain-source ON resistance RDS (ON) VGS= 10 V, ID= 7.5 A 0.23 0.3
Forward transfer admittance Yf s VDS= 10 V, ID= 7.5 A 2.3 8.2 S
Input capacitance Ciss 3100
Reverse transfer capacitance Crss 20
Output capacitance Coss
VDS= 25 V, V GS= 0 V, f = 1 MHz
270
pF
Rise time tr 70
Turn-on time ton 130
Fall time tf 70
Switching time
Turn-off time toff 280
ns
Total gate charge Qg 62
Gate-source charge Qgs 40
Gate-drain charge Qgd
VDD 400 V, VGS= 10 V, ID= 15A
22
nC
Source-Drain Ratings and Characteristics (Ta=
25C)
Characteris tics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current(Note 1)
IDR 15 A
Pulse drain reverse current (Note 1) IDRP 60 A
Forward voltage (diode) VDSF IDR= 15A, V GS= 0 V 1.7 V
Reverse recovery time trr 1.3 s
Reverse recovery charge Qrr
IDR= 15A, V GS= 0 V,
dIDR/dt = 100 A/s 18 C
Marking
RL=260 V
10VVGS
VDD 200 V
ID= 7.5A VOUT
50
Duty
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2SK3934
DRAIN CURRENT D (A)
RDS (ON) ID
DRAINSOURCEONRESISTANCE
RDS(ON)
(m)
DRAINSOURCE VOLTAGE VDS (V)
ID VDS
DRAINCURRENTID
(A)
20
8
0
16
4
DRAINSOURCE VOLTAGE VDS (V)
ID VDS
DRAINCURRENTID
(A)
GATESOURCE VOLTAGE VGS (V)
ID VGS
DRAIN
CURRENT
ID
(A)
0
0 2 4 6 8 10
20
50
10V
30
40
10
GATESOURCE VOLTAGE VGS (V)
VDS VGS
0
6
8
10
0 4 8 12 16 20
12
4
2
DRAIN CURRENT D (A)
Yf s ID
FORWARDTRANSIENTADMITTANCE
Yfs
(S)
10
1 10 100
100
1000
0.1
10
100
0.1 10010
0 2 4 8
COMMON SOURCE
Tc = 25CPULSE TEST
10
40
30
20
10
0
50
0 8 20
COMMON SOURCE
Tc = 25CPULSE TEST
6.2V
7V
6.6V
16124
VGS= 5V
8V
6.4V
5.8V
5.4V 6V
7V
7.5V
8V
6.5V
COMMON SOURCE
Tc = 25
PULSE TEST
ID= 15 A
ID= 7.5 A
ID= 3.8 A
VGS= 10 V
COMMON SOURCE
Tc = 25C
PULSE TEST
Tc =55C
100
25
6
DRAINSOU
RCEVOLTAGE
DS
(V)
COMMON SOURCE
VDS= 20 V
PULSE TEST
Tc = 25C
Tc = 100C Tc =55C
6V6.8V
10V
VGS= 5 V
COMMON SOURCE
VDS= 20 V
PULSE TEST
1
1
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2SK3934
DRAINSOURCE VOLTAGE VDS (V)
C VDS
CAPACITANCE
C
(pF)
100.1
100
1000
10000
1 10 100
CASE TEMPERATURE Tc C)
RDS (ON) Tc
DRAINSOURCEONRES
ISTANCE
RDS(ON)
(m)
16040 0 40 80 12080
1000
800
600
400
200
0
TOTAL GATE CHARGE g (nC)
DYNAMIC INPUT/OUTPUTCHARACTERISTICS
DRAINSOURCEVOLTAGE
VDS(V
)
GATETHRESHOLDVOLTAGE
Vth
(V)
CASE TEMPERATURE Tc ( C)
Vth Tc
0
1
2
3
5
80 40 0 40 80 120 160
4
DRAINPOWERDISSIPATION
PD(W
)
CASE TEMPERATURE Tc C)
PD Tc80
40
00 40 80 120 160
20
60
DRAINSOURCE VOLTAGE VDS (V)
IDR VDS
DRAINREVERSECURREN
T
IDR
(A)
00.1
1
10
100
0.8 1.2 1.60.4
0 60 80 100
500
400
04020
8
4
16
20
0
COMMON SOURCE
VGS= 10 V
PULSE TEST
ID= 15A
7.5
3.8
COMMON SOURCE
VDS= 10 V
ID= 1 mA
PULSE TEST
COMMON SOURCE
VGS= 0 V
f = 1 MHz
Tc = 25C
Ciss
Coss
Crss
COMMON SOURCE
Tc = 25C
PULSE TEST
5
3
1
VGS= 0 V
10
GATESOURCEVOLTAGE
VGS
(V)
VDS
VGS
VDD= 100 V
200V
400V
COMMON SOURCE
ID= 15 A
Tc= 25C
PULSE TEST
12300
200
100
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2SK3934
15V
15V
TEST CIRCUIT WAVE FORM
IAR
BVDSS
VDD VDS
RG= 25 VDD= 90 V, L = 8.13 mH
=
VDDBVDSS
BVDSS2IL2
1? AS
CHANNEL TEMPERATURE (INITIAL)Tch (C)
EAS Tch
AVALANCHE
ENERGY
EAS
(mJ)
1200
1000
800
600
200
025 50 75 100 125 150
rth tw
PULSE WIDTH w (s)
NORMALIZEDTRANSIENTTHERMAL
IMPEDANCE
rth(t)/Rth(ch-c)
0.01
10
0.1
1
10
100 1 10 100 1 10
0.001
DRAINSOURCE VOLTAGE VDS (V)
SAFE OPERATING AREA
DRAINCURRENT
ID
(A)
0.1
1
1
10
100
10 10001000.01
Duty=0.5
0.2
0.1
0.05
0.02
0.01SINGLE PULSE
*SINGLE NONREPETITIVE PULSE
Tc = 25C
CURVES MUST BE DERATED
LINEALY WITH INCREASE IN
TEMPERATURE
DC OPERATION
Tc = 25C
1 ms *
VDSSmax
ID max (CONTINUOUS) *
ID max (PULSED) *
100 s *
T
PDM
t
Duty = t/TRth (ch-c)= 2.5C/W
400
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2SK3934
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may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
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030619EAARESTRICTIONS ON PRODUCT USE
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