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2SK3934

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)

2SK3934

Switching Regulator Applications

Low drain-sour ce ON resista nce: R DS (ON) = 0.23 (typ.) High forward tr ansfer adm ittance: | Yfs | =8.2 S (typ.) Low leakage curr ent : IDSS = 100 A (VDS = 500 V) Enha ncement-mode: V th = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 500 V

Drain-gate voltage (RGS= 20 k) VDGR 500 V

Gate-source voltage VGSS 30 V

DC (Note 1) ID 15

Drain current Pulse (t = 1 ms)(Note 1)

IDP 60A

Drain power dissipation (Tc = 25C) PD 50 W

Single pulse avalanche energy(Note 2)

EAS 1.08 J

Avalanche current IAR 15 A

Repetitive avalanche energy (Note 3) EAR 5.0 mJ

Channel temperature Tch 150 C

Storage temperature range Tstg -55~150 C

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 2.5 C/W

Thermal resistance, channel to ambient Rth ( ch-a) 62.5 C/W

Note 1: Please use devices on conditions that the channel temperature is below 150C.

Note 2: VDD= 90 V, Tch= 25C(initial), L = 8.16mH, IAR= 15 A, RG= 25

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

1: Gate2: Drain3: Source

JEDEC ?

JEITA SC-67

TOSHIBA 2-10U1B

Weight : 1.7 g (typ.)

1

3

2

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2SK3934

Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS=25 V, V DS= 0 V 10 A

Gate-source breakdown voltage V (BR) GSS IG=10 A, VDS= 0 V 30 V

Drain cut-off current IDSS VDS= 500 V, V GS= 0 V 100 ADrain-source breakdown voltage V (BR) DSS ID= 10 mA, VGS= 0 V 500 V

Gate threshold voltage Vth VDS= 10 V, ID= 1 mA 2.0 4.0 V

Drain-source ON resistance RDS (ON) VGS= 10 V, ID= 7.5 A 0.23 0.3

Forward transfer admittance Yf s VDS= 10 V, ID= 7.5 A 2.3 8.2 S

Input capacitance Ciss 3100

Reverse transfer capacitance Crss 20

Output capacitance Coss

VDS= 25 V, V GS= 0 V, f = 1 MHz

270

pF

Rise time tr 70

Turn-on time ton 130

Fall time tf 70

Switching time

Turn-off time toff 280

ns

Total gate charge Qg 62

Gate-source charge Qgs 40

Gate-drain charge Qgd

VDD 400 V, VGS= 10 V, ID= 15A

22

nC

Source-Drain Ratings and Characteristics (Ta=

25C)

Characteris tics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current(Note 1)

IDR 15 A

Pulse drain reverse current (Note 1) IDRP 60 A

Forward voltage (diode) VDSF IDR= 15A, V GS= 0 V 1.7 V

Reverse recovery time trr 1.3 s

Reverse recovery charge Qrr

IDR= 15A, V GS= 0 V,

dIDR/dt = 100 A/s 18 C

Marking

RL=260 V

10VVGS

VDD 200 V

ID= 7.5A VOUT

50

Duty

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2SK3934

DRAIN CURRENT D (A)

RDS (ON) ID

DRAINSOURCEONRESISTANCE

RDS(ON)

(m)

DRAINSOURCE VOLTAGE VDS (V)

ID VDS

DRAINCURRENTID

(A)

20

8

0

16

4

DRAINSOURCE VOLTAGE VDS (V)

ID VDS

DRAINCURRENTID

(A)

GATESOURCE VOLTAGE VGS (V)

ID VGS

DRAIN

CURRENT

ID

(A)

0

0 2 4 6 8 10

20

50

10V

30

40

10

GATESOURCE VOLTAGE VGS (V)

VDS VGS

0

6

8

10

0 4 8 12 16 20

12

4

2

DRAIN CURRENT D (A)

Yf s ID

FORWARDTRANSIENTADMITTANCE

Yfs

(S)

10

1 10 100

100

1000

0.1

10

100

0.1 10010

0 2 4 8

COMMON SOURCE

Tc = 25CPULSE TEST

10

40

30

20

10

0

50

0 8 20

COMMON SOURCE

Tc = 25CPULSE TEST

6.2V

7V

6.6V

16124

VGS= 5V

8V

6.4V

5.8V

5.4V 6V

7V

7.5V

8V

6.5V

COMMON SOURCE

Tc = 25

PULSE TEST

ID= 15 A

ID= 7.5 A

ID= 3.8 A

VGS= 10 V

COMMON SOURCE

Tc = 25C

PULSE TEST

Tc =55C

100

25

6

DRAINSOU

RCEVOLTAGE

DS

(V)

COMMON SOURCE

VDS= 20 V

PULSE TEST

Tc = 25C

Tc = 100C Tc =55C

6V6.8V

10V

VGS= 5 V

COMMON SOURCE

VDS= 20 V

PULSE TEST

1

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2SK3934

DRAINSOURCE VOLTAGE VDS (V)

C VDS

CAPACITANCE

C

(pF)

100.1

100

1000

10000

1 10 100

CASE TEMPERATURE Tc C)

RDS (ON) Tc

DRAINSOURCEONRES

ISTANCE

RDS(ON)

(m)

16040 0 40 80 12080

1000

800

600

400

200

0

TOTAL GATE CHARGE g (nC)

DYNAMIC INPUT/OUTPUTCHARACTERISTICS

DRAINSOURCEVOLTAGE

VDS(V

)

GATETHRESHOLDVOLTAGE

Vth

(V)

CASE TEMPERATURE Tc ( C)

Vth Tc

0

1

2

3

5

80 40 0 40 80 120 160

4

DRAINPOWERDISSIPATION

PD(W

)

CASE TEMPERATURE Tc C)

PD Tc80

40

00 40 80 120 160

20

60

DRAINSOURCE VOLTAGE VDS (V)

IDR VDS

DRAINREVERSECURREN

T

IDR

(A)

00.1

1

10

100

0.8 1.2 1.60.4

0 60 80 100

500

400

04020

8

4

16

20

0

COMMON SOURCE

VGS= 10 V

PULSE TEST

ID= 15A

7.5

3.8

COMMON SOURCE

VDS= 10 V

ID= 1 mA

PULSE TEST

COMMON SOURCE

VGS= 0 V

f = 1 MHz

Tc = 25C

Ciss

Coss

Crss

COMMON SOURCE

Tc = 25C

PULSE TEST

5

3

1

VGS= 0 V

10

GATESOURCEVOLTAGE

VGS

(V)

VDS

VGS

VDD= 100 V

200V

400V

COMMON SOURCE

ID= 15 A

Tc= 25C

PULSE TEST

12300

200

100

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2SK3934

15V

15V

TEST CIRCUIT WAVE FORM

IAR

BVDSS

VDD VDS

RG= 25 VDD= 90 V, L = 8.13 mH

=

VDDBVDSS

BVDSS2IL2

1? AS

CHANNEL TEMPERATURE (INITIAL)Tch (C)

EAS Tch

AVALANCHE

ENERGY

EAS

(mJ)

1200

1000

800

600

200

025 50 75 100 125 150

rth tw

PULSE WIDTH w (s)

NORMALIZEDTRANSIENTTHERMAL

IMPEDANCE

rth(t)/Rth(ch-c)

0.01

10

0.1

1

10

100 1 10 100 1 10

0.001

DRAINSOURCE VOLTAGE VDS (V)

SAFE OPERATING AREA

DRAINCURRENT

ID

(A)

0.1

1

1

10

100

10 10001000.01

Duty=0.5

0.2

0.1

0.05

0.02

0.01SINGLE PULSE

*SINGLE NONREPETITIVE PULSE

Tc = 25C

CURVES MUST BE DERATED

LINEALY WITH INCREASE IN

TEMPERATURE

DC OPERATION

Tc = 25C

1 ms *

VDSSmax

ID max (CONTINUOUS) *

ID max (PULSED) *

100 s *

T

PDM

t

Duty = t/TRth (ch-c)= 2.5C/W

400

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2SK3934

The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of

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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

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030619EAARESTRICTIONS ON PRODUCT USE

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