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© 1998, 1999
MOS FIELD EFFECT TRANSISTOR
2SK3058SWITCHING
N-CHANNEL POWER MOS FETINDUSTRIAL USE
DATA SHEET
Document No. D13097EJ1V0DS00 (1st edition)Date Published April 1999 NS CP(K)Printed in Japan
DESCRIPTION This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES• Super Low On-State Resistance
RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A)
RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A)
• Low Ciss : Ciss = 2100 pF (TYP.)
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C)
Drain to Source Voltage (VGS = 0) VDSS 60 V
Gate to Source Voltage (VDS = 0) VGSS(AC) ±20 V
Gate to Source Voltage (VDS = 0) VGSS(DC) +20, –10 V
Drain Current (DC) ID(DC) ±55 A
Drain Current (Pulse) Note1 ID(pulse) ±165 A
Total Power Dissipation (TC = 25°C) PT 58 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to + 150 °C
Single Avalanche Current Note2 IAS 27.5 A
Single Avalanche Energy Note2 EAS 75.6 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
THERMAL RESISTANCEChannel to Case Rth(ch-C) 2.16 °C/W
Channel to Ambient Rth(ch-A) 83.3 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3058 TO-220AB
2SK3058-S TO-262
2SK3058-ZJ TO-263
Data Sheet D13097EJ1V0DS002
2SK3058
ELECTRICAL CHARACTERISTICS (T A = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 28 A 12 17 mΩ
RDS(on)2 VGS = 4.0 V, ID = 28 A 19 27 mΩ
Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.6 2.0 V
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 28 A 13 42 S
Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA
Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA
Input Capacitance Ciss VDS = 10 V 2100 pF
Output Capacitance Coss VGS = 0 V 550 pF
Reverse Transfer Capacitance Crss F = 1 MHz 220 pF
Turn-on Delay Time td(on) ID = 28 A 36 ns
Rise Time tr VGS(on) = 10 V 410 ns
Turn-off Delay Time td(off) VDD = 30 V 130 ns
Fall Time tf RG = 10 Ω 260 ns
Total Gate Charge QG ID = 55 A 45 nC
Gate to Source Charge QGS VDD = 48 V 7 nC
Gate to Drain Charge QGD VGS = 10 V 13 nC
Body Diode Forward Voltage VF(S-D) IF = 55 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr IF = 55 A, VGS = 0 V 60 ns
Reverse Recovery Charge Qrr di/dt = 100A/µs 100 nC
VGS = 20 → 0 VPG.
RG = 25 Ω
50 Ω
D.U.T.L
VDDPG. RG = 10 Ω
D.U.T.RL
VDD
RG
PG.
IG = 2 mA
50 Ω
D.U.T.RL
VDD
IDVDD
IASVDS
BVDSS
Starting Tch
VGS
0
τ = 1 µsDuty Cycle ≤ 1 %
τ
VGSWave Form
IDWave Form
VGS
ID
10 %0
0
90 %
90 %
90 %
VGS(on)
ID
ton toff
td(on) tr td(off) tf
10 % 10 %
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
Data Sheet D13097EJ1V0DS00 3
2SK3058
TYPICAL CHARACTERISTICS (T A = 25 °C)
DERATING FACTOR OF FORWARD BIASSAFE OPERATING AREA
TC - Case Temperature - °C
dT -
Per
cent
age
of R
ated
Pow
er -
%
0 20 40 60 80 100 120 140 160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.CASE TEMPERATURE
TC - Case Temperature - °C
PT -
Tot
al P
ower
Dis
sipa
tion
- W
0 20 40 60 80 100 120 140 160
70
60
50
40
30
20
10
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID -
Dra
in C
urre
nt -
A
10.1
10
100
1000
1 10 100
TC = 25˚CSingle Pulse
RDS(on) Lim
ited (V
GS = 10V) P
W = 10 µs100 µs1 ms10 ms100 msDC
Power Dissipation Limited
ID(DC) = 55A
ID(pulse) = 165A
DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID -
Dra
in C
urre
nt -
A
0 2 3 4
80
100
1
Pulsed
VGS = 10 V
VGS = 4.0 V60
40
20
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID -
Dra
in C
urre
nt -
A
0.1
1
10
100
0 1 2 3 4 5
PulsedVDS = 10 V
TA = 125˚C75˚C25˚C
−25˚C
Data Sheet D13097EJ1V0DS004
2SK3058
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t
) - T
rans
ient
The
rmal
Res
ista
nce
- ˚C
/W
10
0.001
0.01
0.1
1
100
1 000
1 m 10 m 100 m 1 10 100 1000 10µ µ100
TC = 25˚CSingle Pulse
Rth(ch-C)= 2.16 ˚C/W
Rth(ch-A)= 83.3 ˚C/W
FORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT
ID - Drain Current - A
| yfs
| -
For
war
d T
rans
fer
Adm
ittan
ce -
S
VDS = 10 VPulsed
0.1 1.0
1
10
100
10 1000.1
Tch = −25˚C25˚C75˚C
125˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - VRD
S(o
n) -
Dra
in to
Sou
rce
On-
stat
e R
esis
tanc
e -
mΩ
0 10
20
10
30
50
70
20 30
Pulsed
60
40
ID = 28 A
DRAIN TO SOURCE ON-STATERESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
RD
S(o
n) -
Dra
in to
Sou
rce
On-
stat
e R
esis
tanc
e -
mΩ
40
10.1
60
80
10 1000
20
Pulsed
VGS = 10 V
VGS = 4.0 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
VG
S(o
ff) -
Gat
e to
Sou
rce
Cut
-off
Vol
tage
- V
VDS = 10 VID = 1 mA
−50 0 50 100 1500
1.0
2.0
1.5
0.5
Data Sheet D13097EJ1V0DS00 5
2SK3058
DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
RD
S(o
n) -
Dra
in to
Sou
rce
On-
stat
e R
esis
tanc
e - m
Ω
0−50
10
0 50 100 150
ID = 28 A
20
40
30
VGS = 4.0 V
VGS = 10 V
SOURCE TO DRAIN DIODEFORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD -
Dio
de F
orw
ard
Cur
rent
- A
0.1
0
1
10
100
0.5
Pulsed
1 1.5
VGS = 0 V
VGS = 10 V
CAPACITANCE vs. DRAIN TOSOURCE VOLTAGE
VDS - Drain to Source Voltage - V
Cis
s, C
oss,
Crs
s -
Cap
acita
nce
- pF
1000.1
1 000
10 000
100 000
1 10 100
VGS = 0 Vf = 1 MHz
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(o
n), t
r, td
(off)
, tf -
Sw
itchi
ng T
ime
- ns
0.1
10
100
1 000
10 000
1 10 100
VDD = 30 VVGS = 10 VRG = 10 Ω
td(off)
td(on)
trtf
REVERSE RECOVERY TIME vs.DRAIN CURRENT
IF - Drain Current - A
trr -
Rev
erse
Rec
over
y T
ime
- ns
di/dt = 100 A /VGS = 0 V
µs
10.1
10
1 10 100
1 000
100
VG
S -
Gat
e to
Sou
rce
Vol
tage
- V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
VD
S -
Dra
in to
Sou
rce
Vol
tage
- V
0 20 40 60 80
20
40
60
80
2
4
6
8
0
VDD = 12 V30 V48 V
12
14
16
10
ID = 55 A
Data Sheet D13097EJ1V0DS006
2SK3058
SINGLE AVALANCHE ENERGY vs.INDUCTIVE LOAD
L - Inductive Load - H
IAS -
Sin
gle
Ava
lanc
he E
nerg
y -
mJ
1.0
10
100
1 m 10 m
VDD = 30 VVGS = 20 V → 0 VRGS = 25 Ω
IAS = 27.5 A
10µ 100µ0.1
EAS = 75.6 mJ
SINGLE AVALANCHE ENERGYDERATING FACTOR
Starting Tch - Starting Channel Temperature - ˚C
Ene
rgy
Der
atin
g F
acto
r -
%
25 50 75 100
160
140
120
100
80
60
40
20
0125 150
VDD = 30VRG = 25ΩVGS = 20 V → 0 VIAS ≤ 27.5A
Data Sheet D13097EJ1V0DS00 7
2SK3058
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25) 2)TO-262 (MP-25 Fin Cut)
3)TO-263 (MP-25ZJ)
EQUIVALENT CIRCUIT
4.8 MAX.
1.Gate2.Drain3.Source4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.6±0.2
4
3.0±
0.3
1.3±0.2
0.75±0.12.54 TYP. 2.54 TYP.
5.9
MIN
.6.
0 M
AX
.
15.5
MA
X.
12.7
MIN
.
1.3±0.2
0.5±0.2 2.8±0.2
φ4.8 MAX.
1.Gate2.Drain3.Source4.Fin (Drain)
1 2 3
(10)
4
1.3±0.2
0.75±0.32.54 TYP. 2.54 TYP.
8.5±
0.2
12.7
MIN
.
1.3±0.2
0.5±0.2 2.8±0.2
1.0±
0.5
(10)
1.4±0.2
1.0±
0.5
2.54 TYP. 2.54 TYP.
8.5±
0.2
1 2 3
5.7±
0.4
4
2.8±
0.2
4.8 MAX.1.3±0.2
0.5±0.2(0.5R)
(0.8R)
1.Gate2.Drain3.Source4.Fin (Drain)
0.7±0.2
Source
BodyDiode
GateProtectionDiode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2SK3058
• The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.• NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8
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