2SK30

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© 1998, 1999

MOS FIELD EFFECT TRANSISTOR

2SK3058SWITCHING

N-CHANNEL POWER MOS FETINDUSTRIAL USE

DATA SHEET

Document No. D13097EJ1V0DS00 (1st edition)Date Published April 1999 NS CP(K)Printed in Japan

DESCRIPTION This product is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES• Super Low On-State Resistance

RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A)

RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A)

• Low Ciss : Ciss = 2100 pF (TYP.)

• Built-in Gate Protection Diode

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C)

Drain to Source Voltage (VGS = 0) VDSS 60 V

Gate to Source Voltage (VDS = 0) VGSS(AC) ±20 V

Gate to Source Voltage (VDS = 0) VGSS(DC) +20, –10 V

Drain Current (DC) ID(DC) ±55 A

Drain Current (Pulse) Note1 ID(pulse) ±165 A

Total Power Dissipation (TC = 25°C) PT 58 W

Total Power Dissipation (TA = 25°C) PT 1.5 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg –55 to + 150 °C

Single Avalanche Current Note2 IAS 27.5 A

Single Avalanche Energy Note2 EAS 75.6 mJ

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0

THERMAL RESISTANCEChannel to Case Rth(ch-C) 2.16 °C/W

Channel to Ambient Rth(ch-A) 83.3 °C/W

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3058 TO-220AB

2SK3058-S TO-262

2SK3058-ZJ TO-263

Data Sheet D13097EJ1V0DS002

2SK3058

ELECTRICAL CHARACTERISTICS (T A = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 28 A 12 17 mΩ

RDS(on)2 VGS = 4.0 V, ID = 28 A 19 27 mΩ

Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.6 2.0 V

Forward Transfer Admittance | yfs | VDS = 10 V, ID = 28 A 13 42 S

Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA

Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA

Input Capacitance Ciss VDS = 10 V 2100 pF

Output Capacitance Coss VGS = 0 V 550 pF

Reverse Transfer Capacitance Crss F = 1 MHz 220 pF

Turn-on Delay Time td(on) ID = 28 A 36 ns

Rise Time tr VGS(on) = 10 V 410 ns

Turn-off Delay Time td(off) VDD = 30 V 130 ns

Fall Time tf RG = 10 Ω 260 ns

Total Gate Charge QG ID = 55 A 45 nC

Gate to Source Charge QGS VDD = 48 V 7 nC

Gate to Drain Charge QGD VGS = 10 V 13 nC

Body Diode Forward Voltage VF(S-D) IF = 55 A, VGS = 0 V 1.0 V

Reverse Recovery Time trr IF = 55 A, VGS = 0 V 60 ns

Reverse Recovery Charge Qrr di/dt = 100A/µs 100 nC

VGS = 20 → 0 VPG.

RG = 25 Ω

50 Ω

D.U.T.L

VDDPG. RG = 10 Ω

D.U.T.RL

VDD

RG

PG.

IG = 2 mA

50 Ω

D.U.T.RL

VDD

IDVDD

IASVDS

BVDSS

Starting Tch

VGS

0

τ = 1 µsDuty Cycle ≤ 1 %

τ

VGSWave Form

IDWave Form

VGS

ID

10 %0

0

90 %

90 %

90 %

VGS(on)

ID

ton toff

td(on) tr td(off) tf

10 % 10 %

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

Data Sheet D13097EJ1V0DS00 3

2SK3058

TYPICAL CHARACTERISTICS (T A = 25 °C)

DERATING FACTOR OF FORWARD BIASSAFE OPERATING AREA

TC - Case Temperature - °C

dT -

Per

cent

age

of R

ated

Pow

er -

%

0 20 40 60 80 100 120 140 160

20

40

60

80

100

TOTAL POWER DISSIPATION vs.CASE TEMPERATURE

TC - Case Temperature - °C

PT -

Tot

al P

ower

Dis

sipa

tion

- W

0 20 40 60 80 100 120 140 160

70

60

50

40

30

20

10

FORWARD BIAS SAFE OPERATING AREA

VDS - Drain to Source Voltage - V

ID -

Dra

in C

urre

nt -

A

10.1

10

100

1000

1 10 100

TC = 25˚CSingle Pulse

RDS(on) Lim

ited (V

GS = 10V) P

W = 10 µs100 µs1 ms10 ms100 msDC

Power Dissipation Limited

ID(DC) = 55A

ID(pulse) = 165A

DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGE


ID -

Dra

in C

urre

nt -

A

0 2 3 4

80

100

1

Pulsed

VGS = 10 V

VGS = 4.0 V60

40

20

FORWARD TRANSFER CHARACTERISTICS

VGS - Gate to Source Voltage - V

ID -

Dra

in C

urre

nt -

A

0.1

1

10

100

0 1 2 3 4 5

PulsedVDS = 10 V

TA = 125˚C75˚C25˚C

−25˚C


2SK3058

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

PW - Pulse Width - s

rth(t

) - T

rans

ient

The

rmal

Res

ista

nce

- ˚C

/W

10

0.001

0.01

0.1

1

100

1 000

1 m 10 m 100 m 1 10 100 1000 10µ µ100

TC = 25˚CSingle Pulse

Rth(ch-C)= 2.16 ˚C/W

Rth(ch-A)= 83.3 ˚C/W

FORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT

ID - Drain Current - A

| yfs

| -

For

war

d T

rans

fer

Adm

ittan

ce -

S

VDS = 10 VPulsed

0.1 1.0

1

10

100

10 1000.1

Tch = −25˚C25˚C75˚C

125˚C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE

VGS - Gate to Source Voltage - VRD

S(o

n) -

Dra

in to

Sou

rce

On-

stat

e R

esis

tanc

e -

mΩ

0 10

20

10

30

50

70

20 30

Pulsed

60

40

ID = 28 A

DRAIN TO SOURCE ON-STATERESISTANCE vs. DRAIN CURRENT


RD

S(o

n) -

Dra

in to

Sou

rce

On-

stat

e R

esis

tanc

e -

mΩ

40

10.1

60

80

10 1000

20

Pulsed

VGS = 10 V

VGS = 4.0 V

GATE TO SOURCE CUT-OFF VOLTAGE vs.CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

VG

S(o

ff) -

Gat

e to

Sou

rce

Cut

-off

Vol

tage

- V

VDS = 10 VID = 1 mA

−50 0 50 100 1500

1.0

2.0

1.5

0.5


2SK3058

DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

RD

S(o

n) -

Dra

in to

Sou

rce

On-

stat

e R

esis

tanc

e - m

Ω

0−50

10

0 50 100 150

ID = 28 A

20

40

30

VGS = 4.0 V

VGS = 10 V

SOURCE TO DRAIN DIODEFORWARD VOLTAGE

VSD - Source to Drain Voltage - V

ISD -

Dio

de F

orw

ard

Cur

rent

- A

0.1

0

1

10

100

0.5

Pulsed

1 1.5

VGS = 0 V

VGS = 10 V

CAPACITANCE vs. DRAIN TOSOURCE VOLTAGE


Cis

s, C

oss,

Crs

s -

Cap

acita

nce

- pF

1000.1

1 000

10 000

100 000

1 10 100

VGS = 0 Vf = 1 MHz

Ciss

Coss

Crss

SWITCHING CHARACTERISTICS


td(o

n), t

r, td

(off)

, tf -

Sw

itchi

ng T

ime

- ns

0.1

10

100

1 000

10 000

1 10 100

VDD = 30 VVGS = 10 VRG = 10 Ω

td(off)

td(on)

trtf

REVERSE RECOVERY TIME vs.DRAIN CURRENT

IF - Drain Current - A

trr -

Rev

erse

Rec

over

y T

ime

- ns

di/dt = 100 A /VGS = 0 V

µs

10.1

10

1 10 100

1 000

100

VG

S -

Gat

e to

Sou

rce

Vol

tage

- V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

QG - Gate Charge - nC

VD

S -

Dra

in to

Sou

rce

Vol

tage

- V

0 20 40 60 80

20

40

60

80

2

4

6

8

0

VDD = 12 V30 V48 V

12

14

16

10

ID = 55 A


2SK3058

SINGLE AVALANCHE ENERGY vs.INDUCTIVE LOAD

L - Inductive Load - H

IAS -

Sin

gle

Ava

lanc

he E

nerg

y -

mJ

1.0

10

100

1 m 10 m

VDD = 30 VVGS = 20 V → 0 VRGS = 25 Ω

IAS = 27.5 A

10µ 100µ0.1

EAS = 75.6 mJ

SINGLE AVALANCHE ENERGYDERATING FACTOR

Starting Tch - Starting Channel Temperature - ˚C

Ene

rgy

Der

atin

g F

acto

r -

%

25 50 75 100

160

140

120

100

80

60

40

20

0125 150

VDD = 30VRG = 25ΩVGS = 20 V → 0 VIAS ≤ 27.5A


2SK3058

PACKAGE DRAWINGS (Unit : mm)

1)TO-220AB (MP-25) 2)TO-262 (MP-25 Fin Cut)

3)TO-263 (MP-25ZJ)

EQUIVALENT CIRCUIT

4.8 MAX.

1.Gate2.Drain3.Source4.Fin (Drain)

1 2 3

10.6 MAX.

10.0

3.6±0.2

4

3.0±

0.3

1.3±0.2

0.75±0.12.54 TYP. 2.54 TYP.

5.9

MIN

.6.

0 M

AX

.

15.5

MA

X.

12.7

MIN

.

1.3±0.2

0.5±0.2 2.8±0.2

φ4.8 MAX.


1 2 3

(10)

4

1.3±0.2

0.75±0.32.54 TYP. 2.54 TYP.

8.5±

0.2

12.7

MIN

.

1.3±0.2

0.5±0.2 2.8±0.2

1.0±

0.5

(10)

1.4±0.2

1.0±

0.5

2.54 TYP. 2.54 TYP.

8.5±

0.2

1 2 3

5.7±

0.4

4

2.8±

0.2

4.8 MAX.1.3±0.2

0.5±0.2(0.5R)

(0.8R)


0.7±0.2

Source

BodyDiode

GateProtectionDiode

Gate

Drain

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

2SK3058

• The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.• NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.

M7 98. 8

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