Contact Modeling and Analysis of InAs HEMT Seung Hyun Park, Mehdi Salmani-Jelodar, Hong-Hyun Park, Sebastian Steiger, Michael Povoltsky, Tillmann Kubis,
Tutorial5: (real) Device Simulations – Quantum Dots Jean Michel D. Sellier Yuling Hsueh, Hesameddin Ilatikhameneh, Tillmann Kubis, Michael Povolotskyi,
Network for Computational Nanotechnology (NCN) UC Berkeley, Univ.of Illinois, Norfolk State, Northwestern, Purdue, UTEP Using NEMO5 to quantitatively predict.
Efficient solution algorithm of non-equilibrium Green’s functions in atomistic tight binding representation Yu He, Lang Zeng, Tillmann Kubis, Michael Povolotskyi,
Tutorial3: NEMO5 Models Jean Michel D. Sellier, Tillmann Kubis, Michael Povolotskyi, Jim Fonseca, Gerhard Klimeck Network for Computational Nanotechnology.
Device Simulation: Transport (Double Gate MOSFETs) Mehdi Salmani Jelodar, Seung Hyun Park, Zhengping Jiang, Tillmann Kubis, Michael Povolotsky, Jim Fonseca,
Quantum Transport in GaSb / InAs Tunneling FET
Tutorial3: NEMO5 Models
Generation of Empirical Tight Binding Parameters from ab -initio simulations
Using NEMO5 to quantitatively predict topological insulator behaviour
Device Simulation: Transport (Double Gate MOSFETs)
Tight-Binding Modeling of Intermediate Valence Compound SmSe for Piezoelectronic Devices
