Electrical parameter extraction & modeling of SiGe HBT for HFapplications
1 1.0-THz f max InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance Vibhor Jain, Johann C. Rode, Han-Wei.
In-situ and Ex-situ Ohmic Contacts To Heavily Doped p-InGaAs TLM Fabrication by photolithography and liftoff Ir dry etched in SF 6 /Ar with Ni as etch.
InGaAs/InP DHBTs with Emitter and Base Defined through Electron-beam Lithography for Reduced C cb and Increased RF Cut-off Frequency
